CN103456718A - Metal interconnecting wire electromigration test structure - Google Patents
Metal interconnecting wire electromigration test structure Download PDFInfo
- Publication number
- CN103456718A CN103456718A CN2012101831408A CN201210183140A CN103456718A CN 103456718 A CN103456718 A CN 103456718A CN 2012101831408 A CN2012101831408 A CN 2012101831408A CN 201210183140 A CN201210183140 A CN 201210183140A CN 103456718 A CN103456718 A CN 103456718A
- Authority
- CN
- China
- Prior art keywords
- metal
- charge transfer
- test structure
- transfer test
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The invention provides a metal interconnecting wire electromigration test structure. Multiple input ends of a node mat access one corresponding end of a first metal layer in different directions, currents flowing into the filling contact position of the first metal layer and a through hole are shunted and collected in a shunting and collecting mode, the density of the currents of the surrounding area of the contact position is effectively reduced, the electromigration effect of the first metal layer is improved, an unexpected hole in the first metal layer of the surrounding area of the contact position is avoided, the electromigration test of a second metal layer is guaranteed to be carried out successfully, and the success rate of the metal interconnecting wire electromigration test is improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of metal interconnecting charge transfer test structure.
Background technology
In ic manufacturing process, electromigration (Electro-Migration, the EM) phenomenon of metal interconnecting wires causes open circuit and the short circuit of metal interconnecting wires, and device creepage is increased.Along with the integrated circuit scale constantly enlarges, device size constantly dwindles, and the width of metal interconnecting wires constantly reduces, and current density constantly rises, and is easier to lose efficacy because of electromigration, has become an important integrity problem.
Causing electromigratory immediate cause is the movement of metallic atom.When the ELECTROMIGRATION PHENOMENON of integrated circuit refers to integrated circuit (IC)-components work, in metal interconnecting wires, there is certain electric current to pass through, electrostatic field force drives electronics to be moved by the negative electrode anode, the electronics of high-speed motion and metallic atom generation energy exchange, atom is subject to fierce electron bombardment power, Here it is so-called electronics wind-force.But in fact metallic atom is also received reciprocal electrostatic field force simultaneously.When the current density in interconnection line is higher, a large amount of electron collision metallic atoms of anode motion, the electronics wind-force that makes metallic atom be subject to is greater than electrostatic field force.Therefore, metallic atom is subject to the driving of electronics wind-force, make it from the directed diffusion of negative electrode anode, make negative electrode produce the room of metal ion, and the accumulation and cause opening circuit of metal interconnecting wires, simultaneously at anode, due to the accumulation of metal ion, cause whisker or hillock, and likely with the metal line bridging on side.
Be respectively upward view and the cutaway view of existing a kind of normal structure for the metal interconnecting charge transfer test shown in Figure 1A and 1B, metal interconnecting charge transfer testing standard structure generally includes the first metal layer and the second metal level 101, be filled with inter-level dielectric (not shown) between the two, the first metal layer has anode part 103b and cathode portion 103a, cathode portion 103a has the first on-load voltage node F1 and the first sensing voltage node S1, anode part 103b has the second on-load voltage node F2 and the second sensing voltage node S2, the first on-load voltage node F1 and the second on-load voltage node F2 have large-size, to allow higher on-load voltage, setovered.The cathode portion 103a of filling through hole 102a conducting the second metal level 101 and the first metal layer, the cathode portion 103b of filling through hole 102b conducting the second metal level 101 and the first metal layer.For the electromigration in the second metal level 101 of identifying interconnection structure, the first on-load voltage node F1 is applied to the loading bias voltage, then, the voltage produced at the first sensing voltage node S1 sensing.The resistance variations of the second metal level 101 of being reflected over time by the voltage at the first sensing voltage node S1 sensing according to Ohm's law be illustrated in the second metal level 101 in electromigratory existence.Can also on the second on-load voltage node F2, apply the loading bias voltage, and the voltage produced at the second sensing voltage node S2 sensing.The resistance variations of the second metal level 101 of being reflected over time by the voltage at the second sensing voltage node S2 sensing according to Ohm's law means in the second metal level 101, electromigration to have occurred.
Yet, in actual production, find, when applying above-mentioned metal interconnecting charge transfer testing standard structure and carrying out the electro-migration testing of the second metal level 101, the test crash situation usually occurs, reason is the thickness due to the Thickness Ratio anode part 103b of filling through hole 102b large (has even over 10 times), therefore when electric current flows into filling through hole 102b from anode part 103b, cause anode part 103b current density excessive, be easier to produce unexpected hole (Void) 105 because of electromigration at filling through hole 102b and anode part 103b contact position, anode part 103b lost efficacy, cause anode part 103b and filling through hole 102 be connected open circuit, the second metal level 101 electro-migration testing failures.; the second metal level 101 electro-migration testings of success should be that the part 104 generation spaces above the second metal level 101 is arranged in cathode portion 103a are metal level 101 electro-migration testings, rather than accident produces hole 105 in the anode part 103b of the first metal layer.
Summary of the invention
The object of the present invention is to provide a kind of metal interconnecting charge transfer test structure, can effectively avoid because electromigration produces unexpected hole, improve the success rate of metal interconnecting charge transfer test.
In order to address the above problem, the invention provides a kind of metal interconnecting charge transfer test structure, comprise the first metal layer and the second metal level for the treatment of electro-migration testing, described the first metal layer has first end and the second end, and by a filling through hole and described the second metal level, conducts respectively; Described metal interconnecting charge transfer test structure also comprises the node pad that is positioned at described first end and/or the second end, described node pad is for applying test voltage and sensing voltage, and described node spacer has a plurality of inputs, described a plurality of inputs connect first end or the second end from different directions.
Further, the width of described the first metal layer and filling through hole contact position is greater than width and the filling through hole diameter of the second metal level.
Further, described input conducts by conductive plunger and the first metal layer.
Further, the quantity of the conductive plunger of each direction is a plurality of.
Further, the conductive plunger of each direction forms an array.
Further, described array is circle or rectangle.
Further, the quantity of described input is 2 ~ 4.
Further, the end that described the first metal layer is connected to the node pad is respectively equipped with a contact arm for the input that connects described node pad on described different directions.
Further, described conductive plunger is contact hole plug or via plug.
Further, described the second metal level is the first layer metal line M1 in the multilayer interconnection line structure, and described the first metal layer is other layer of metal wire Mx, and wherein, x is more than or equal to 2.
Further, described the first metal layer is the first layer metal line M1 in the multilayer interconnection line structure, and described the second metal level is other layer of metal wire Mx, and wherein, x is more than or equal to 2.
Compared with prior art, metal interconnecting charge transfer test structure provided by the invention, a plurality of inputs by the node pad access the corresponding end of the first metal layer from different directions, the form gathered by shunting makes the electric current that flows into the first metal layer and filling through hole contact position be shunted and gather, effectively reduced the current density in this peripheral region, contact position, improve the electromigration effect of the first metal layer, avoid the generation of the unexpected hole in the first metal layer of peripheral region, contact position, the success that has guaranteed the electro-migration testing of the second metal level is carried out, improved the success rate of metal interconnecting charge transfer test.
The accompanying drawing explanation
Figure 1A is the upward view of the metal interconnecting charge transfer testing standard structure of prior art;
Figure 1B is the cutaway view along the metal interconnecting charge transfer testing standard structure of the XX ' of Figure 1A;
Fig. 2 A is the upward view of the metal interconnecting charge transfer test structure of the embodiment of the present invention one;
Fig. 2 B is the cutaway view along the metal interconnecting charge transfer test structure of the XX ' of Fig. 2 A;
Fig. 2 C is the cutaway view along the metal interconnecting charge transfer test structure of the YY ' of Fig. 2 A;
Fig. 3 A is the upward view of the metal interconnecting charge transfer test structure of the embodiment of the present invention two;
Fig. 3 B is the cutaway view along the metal interconnecting charge transfer test structure of the XX ' of Fig. 3 A;
Fig. 4 A is the upward view of the metal interconnecting charge transfer test structure of the embodiment of the present invention three;
Fig. 4 B is the cutaway view along the metal interconnecting charge transfer test structure of the XX ' of Fig. 4 A;
Fig. 4 C is the cutaway view along the metal interconnecting charge transfer test structure of the YY ' of Fig. 4 A.
Embodiment
Metal interconnecting charge transfer test structure the present invention proposed below in conjunction with the drawings and specific embodiments is described in further detail.
Embodiment mono-
Please refer to Fig. 2 A, 2B, 2C, the present embodiment provides a kind of metal interconnecting charge transfer test structure, comprise the first metal layer with first end 201a and second end 201b, the second metal level 203 for the treatment of electro-migration testing and with two-layer the first filling through hole 202a directly contacted and the second filling through hole 202b, described first end 201a conducts by the first filling through hole 202a and described the second metal level 203, and described the second end 201b conducts by the second filling through hole 202b and described the second metal level 203.
In the present embodiment, described metal interconnecting charge transfer test structure also comprises the node pad 204 that is positioned at described first end 201a, described node pad 204 is for applying test voltage and sensing voltage, and there are 3 input 204a, 204b, 204c, first end 201a isolates 3 contact arm I on direction by dielectric (not shown), II, III, in the inter-level dielectric (not shown) of conductive plunger 205 arrays between node pad 204 and first end 201a, upper lower bottom part is contact input 204a respectively, 204b, 204c and contact arm I, II, III, input 204a, 204b, 204c and contact arm I, II, III is by conductive plunger 205 array electric conductings.
Wherein, described the second metal level 203 is the first layer metal line M1 in the multilayer interconnection line structure; Described the first metal layer is other layer of metal wire Mx, and x is more than or equal to 2, with the electro-migration testing for multilayer interconnection line structure first layer metal line M1; Can be also that described the first metal layer is the first layer metal line M1 in the multilayer interconnection line structure; Described the second metal level is other layer of metal wire Mx, and x is more than or equal to 2, with the electro-migration testing for multilayer interconnection line structure X layer metal wire Mx.
When the metal interconnecting charge transfer test structure of application the present embodiment carries out electro-migration testing to the second metal level 203, for the electromigration in the second metal level 203 of identifying interconnection structure, the first end 201a of the first metal layer is as anode, apply the loading forward bias at node pad 204, the voltage simultaneously produced at node pad 204 place's sensings.The resistance variations of the second metal level 203 of being reflected over time by the voltage of sensing according to Ohm's law is illustrated in electromigratory existence in the second metal level 203.After at node pad 204, applying bias voltage, the electric current produced is by 3 input 204a, 204b, the 204c shunting, then from three contact arm I of first end 201a, II, III is aggregated into the first filling through hole 202a contact position, import the first filling through hole 202a, effectively reduced the first metal layer current density in this peripheral region, contact position, improve the electromigration effect of the first metal layer, avoid the generation of the unexpected hole in the peripheral region, contact position, the success that has guaranteed the electro-migration testing of the second metal level 203 is carried out, improved the success rate of metal interconnecting charge transfer test.
Embodiment bis-
Please refer to Fig. 3 A and 3B, the present embodiment provides a kind of metal interconnecting charge transfer test structure, comprise the first metal layer with first end 301a and second end 301b, the second metal level 303 for the treatment of electro-migration testing and with two-layer first, second filling through hole 302a, the 302b directly contacted, described first end 301a conducts by the first filling through hole 302a and described the second metal level 303, and described the second end 301b conducts by the second filling through hole 302b and described the second metal level 303.
In the present embodiment, described metal interconnecting charge transfer test structure also comprises the first node pad 304 that is positioned at described first end 301a and the first node pad 304 ' that is positioned at described the second end 301b, described first node pad 304 is for applying test voltage and sensing voltage, and there is 3 input 304a, 304b, 304c, first end 301a isolates 3 contact arm I, II, III on direction by dielectric (not shown), in the inter-level dielectric (not shown) of conductive plunger 305 arrays between node pad 304 and first end 301a, upper lower bottom part is contact input 304a, 304b, 304c and contact arm I, II, III respectively, and input 304a, 304b, 304c and contact arm I, II, III are by conductive plunger 305 array electric conductings, described Section Point pad 304 ' is for applying test voltage and sensing voltage, and there are 3 input 304a ', 304b ', 304c ', the second end 301b isolates 3 contact arm I ' on direction by dielectric (not shown), II ', III ', conductive plunger 305 arrays are arranged in the inter-level dielectric (not shown) between node pad 304 ' and the second end 301b, upper lower bottom part is contact input 304 ' a respectively, 304 ' b, 304 ' c and contact arm I ', II ', III ', input 304 ' a, 304 ' b, 304 ' c and contact arm I ', II ', III ' is by conductive plunger 305 array electric conductings.
When the metal interconnecting charge transfer test structure of application the present embodiment carries out electro-migration testing to the second metal level 303, first end 301a that can the first metal layer is as anode, the second end 302b is as negative electrode, apply the loading forward bias at first node pad 304, the voltage simultaneously produced at first node pad 304 place's sensings.The resistance variations of the second metal level 303 of being reflected over time by the voltage of sensing according to Ohm's law is illustrated in electromigratory existence in the second metal level 303; All right, the first end 301a of the first metal layer is as negative electrode, and the second end 302b, as anode, applies the loading forward bias at Section Point pad 304 ', locates at Section Point pad 304 ' voltage that sensing produces simultaneously.The resistance variations of the second metal level 303 of being reflected over time by the voltage of sensing according to Ohm's law is illustrated in electromigratory existence in the second metal level 303.
No matter the present embodiment is to apply bias voltage on first node pad 304 or Section Point pad 304 ', the electric current produced is split into 3 strands by 3 inputs of corresponding node pad, then be aggregated into filling through hole from three contact arms of the respective ends of the first metal layer, effectively reduced the first metal layer current density in this peripheral region, contact position, improve the electromigration effect of the first metal layer, avoid the generation of the unexpected hole in the first metal layer and peripheral region, filling through hole contact position, the success that has guaranteed the electro-migration testing of the second metal level is carried out, improved the success rate of metal interconnecting charge transfer test.
Embodiment tri-
Please refer to Fig. 4 A and 4B, the present embodiment provides a kind of metal interconnecting charge transfer test structure, comprise the first metal layer with first end 401a and second end 401b, the second metal level 403 for the treatment of electro-migration testing and with two-layer the first filling through hole 402a directly contacted and the second filling through hole 402b, described first end 401a conducts by the first filling through hole 402a and described the second metal level 403, and described the second end 401b conducts by the second filling through hole 402b and described the second metal level 403.
In the present embodiment, described metal interconnecting charge transfer test structure also comprises the first node pad 404 that is positioned at described first end 301a and the first node pad 404 ' that is positioned at described the second end 401b; Described first node pad 404 is for applying test voltage and sensing voltage, and there are 2 input 404a, 404b, first end 401a isolates 2 contact arm I, II on direction by dielectric (not shown), in the inter-level dielectric (not shown) of conductive plunger 405 arrays between node pad 404 and first end 401a, lower bottom part difference contact input 404a, 404b and contact arm I, II on it, input 404a, 404b and contact arm I, II are by conductive plunger 405 array electric conductings; Described Section Point pad 404 ' is for applying test voltage and sensing voltage, and there are 2 input 404a ', 404b ', the second end 401b isolates 2 contact arm I ', II ' on direction by dielectric (not shown), conductive plunger 405 arrays are arranged in the inter-level dielectric (not shown) between node pad 404 ' and the second end 401b, upper lower bottom part respectively contact input 404 ' a, 404 ' b, with contact arm I ', II ', input 404 ' a, 404 ' b and contact arm I ', II ' pass through conductive plunger 405 array electric conductings.
When the metal interconnecting charge transfer test structure of application the present embodiment carries out electro-migration testing to the second metal level 403, first end 401a that can the first metal layer is as anode, the second end 402b is as negative electrode, apply the loading forward bias at first node pad 404, the voltage simultaneously produced at first node pad 404 place's sensings.The resistance variations of the second metal level 403 of being reflected over time by the voltage of sensing according to Ohm's law is illustrated in electromigratory existence in the second metal level 403; All right, the first end 401a of the first metal layer is as negative electrode, and the second end 402b, as anode, applies the loading forward bias at Section Point pad 304 ', locates at Section Point pad 404 ' voltage that sensing produces simultaneously.The resistance variations of the second metal level 403 of being reflected over time by the voltage of sensing according to Ohm's law is illustrated in electromigratory existence in the second metal level 403.
No matter the present embodiment is to apply bias voltage on first node pad 404 or Section Point pad 404 ', the electric current produced is split into 2 strands by 2 inputs of corresponding node pad, then be aggregated into filling through hole from 2 contact arms of the respective ends of the first metal layer, effectively reduced the first metal layer current density in this peripheral region, contact position, improve the electromigration effect of the first metal layer, avoid the generation of the unexpected hole in the first metal layer and peripheral region, filling through hole contact position, the success that has guaranteed the electro-migration testing of the second metal level is carried out, improved the success rate of metal interconnecting charge transfer test.
Obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention also is intended to comprise these changes and modification interior.
Claims (11)
1. a metal interconnecting charge transfer test structure, comprise the first metal layer and the second metal level for the treatment of electro-migration testing, and described the first metal layer has first end and the second end, and by a filling through hole and described the second metal level, conducts respectively; Described metal interconnecting charge transfer test structure also comprises the node pad that is positioned at described first end and/or the second end, described node pad is for applying test voltage and sensing voltage, and described node spacer has a plurality of inputs, described a plurality of inputs connect first end or the second end from different directions.
2. metal interconnecting charge transfer test structure as claimed in claim 1, is characterized in that, the width of described the first metal layer and filling through hole contact position is greater than width and the filling through hole diameter of the second metal level.
3. metal interconnecting charge transfer test structure as claimed in claim 2, is characterized in that, described input conducts by conductive plunger and the first metal layer.
4. metal interconnecting charge transfer test structure as claimed in claim 3, is characterized in that, the quantity of the conductive plunger of each direction is a plurality of.
5. metal interconnecting charge transfer test structure as claimed in claim 4, is characterized in that, the conductive plunger of each direction forms an array.
6. metal interconnecting charge transfer test structure as claimed in claim 5, is characterized in that, described array is circle or rectangle.
7. metal interconnecting charge transfer test structure as claimed in claim 1, is characterized in that, the quantity of described input is 2 ~ 4.
8. metal interconnecting charge transfer test structure as claimed in claim 1, is characterized in that, the end that described the first metal layer is connected to the node pad is respectively equipped with a contact arm for the input that connects described node pad on described different directions.
9. metal interconnecting charge transfer test structure as claimed in claim 1, is characterized in that, described conductive plunger is contact hole plug or via plug.
10. metal interconnecting charge transfer test structure as claimed in claim 1, is characterized in that, described the second metal level is the first layer metal line M1 in the multilayer interconnection line structure, and described the first metal layer is other layer of metal wire Mx, and wherein, x is more than or equal to 2.
11. metal interconnecting charge transfer test structure as claimed in claim 1, is characterized in that, described the first metal layer is the first layer metal line M1 in the multilayer interconnection line structure, and described the second metal level is other layer of metal wire Mx, and wherein, x is more than or equal to 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210183140.8A CN103456718B (en) | 2012-06-05 | 2012-06-05 | Metal interconnecting charge transfer test structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210183140.8A CN103456718B (en) | 2012-06-05 | 2012-06-05 | Metal interconnecting charge transfer test structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103456718A true CN103456718A (en) | 2013-12-18 |
| CN103456718B CN103456718B (en) | 2016-03-23 |
Family
ID=49738927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210183140.8A Active CN103456718B (en) | 2012-06-05 | 2012-06-05 | Metal interconnecting charge transfer test structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103456718B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887282A (en) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | Metal electromigration structure |
| CN104900629A (en) * | 2014-03-04 | 2015-09-09 | 中芯国际集成电路制造(上海)有限公司 | Testing structure for detecting deviation |
| CN105093086A (en) * | 2014-04-24 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Electromigration detection structure and detection method |
| CN108428639A (en) * | 2018-04-03 | 2018-08-21 | 武汉新芯集成电路制造有限公司 | A method of realizing that integrated circuitry lines are opened a way to short-circuit transition |
| CN111653550A (en) * | 2020-06-29 | 2020-09-11 | 上海华力微电子有限公司 | Electromigration test structure |
| CN112379245A (en) * | 2020-11-11 | 2021-02-19 | 上海华力集成电路制造有限公司 | Metal electromigration test structure and test method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201017877Y (en) * | 2007-03-06 | 2008-02-06 | 中芯国际集成电路制造(上海)有限公司 | Staged thru hole chain structure easy to test reliability |
| CN101383308A (en) * | 2007-09-04 | 2009-03-11 | 台湾积体电路制造股份有限公司 | Method for measuring a property of interconnections and structure for the same |
-
2012
- 2012-06-05 CN CN201210183140.8A patent/CN103456718B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201017877Y (en) * | 2007-03-06 | 2008-02-06 | 中芯国际集成电路制造(上海)有限公司 | Staged thru hole chain structure easy to test reliability |
| CN101383308A (en) * | 2007-09-04 | 2009-03-11 | 台湾积体电路制造股份有限公司 | Method for measuring a property of interconnections and structure for the same |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900629A (en) * | 2014-03-04 | 2015-09-09 | 中芯国际集成电路制造(上海)有限公司 | Testing structure for detecting deviation |
| CN104900629B (en) * | 2014-03-04 | 2017-08-25 | 中芯国际集成电路制造(上海)有限公司 | A kind of test structure for detecting skew |
| CN103887282A (en) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | Metal electromigration structure |
| CN103887282B (en) * | 2014-03-20 | 2016-08-17 | 上海华力微电子有限公司 | A kind of metal electro-migration structure |
| CN105093086A (en) * | 2014-04-24 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Electromigration detection structure and detection method |
| CN105093086B (en) * | 2014-04-24 | 2018-05-11 | 中芯国际集成电路制造(上海)有限公司 | The detection structure and detection method of a kind of electromigration |
| CN108428639A (en) * | 2018-04-03 | 2018-08-21 | 武汉新芯集成电路制造有限公司 | A method of realizing that integrated circuitry lines are opened a way to short-circuit transition |
| CN111653550A (en) * | 2020-06-29 | 2020-09-11 | 上海华力微电子有限公司 | Electromigration test structure |
| CN111653550B (en) * | 2020-06-29 | 2023-09-29 | 上海华力微电子有限公司 | Electromigration test structure |
| CN112379245A (en) * | 2020-11-11 | 2021-02-19 | 上海华力集成电路制造有限公司 | Metal electromigration test structure and test method thereof |
| CN112379245B (en) * | 2020-11-11 | 2023-08-11 | 上海华力集成电路制造有限公司 | Metal electromigration test structure and test method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103456718B (en) | 2016-03-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103456718B (en) | Metal interconnecting charge transfer test structure | |
| US7119414B2 (en) | Fuse layout and method trimming | |
| CN108140577A (en) | Semiconductor devices and its manufacturing method | |
| CN100440458C (en) | Semiconductor device with multilayer interconnection structure | |
| CN109872766B (en) | Failure analysis method of three-dimensional memory | |
| CN205376473U (en) | Electromigration test structure | |
| KR101993854B1 (en) | Antifuse of semiconductor device, module and system having the semiconductor device and manufacturing method for the antifuse | |
| CN205542761U (en) | Power module | |
| CN110137155B (en) | Array substrate mother board | |
| CN103811467A (en) | Electromigration test structure and method | |
| CN205248238U (en) | Reliability test structure | |
| CN103337486B (en) | Semiconductor packaging structure and manufacture method thereof | |
| CN101131978A (en) | Integrated circuit packaging construction and multi-layer conducting wire holder used for it | |
| CN109192675B (en) | Package detection method | |
| US9117880B2 (en) | Method for manufacturing semiconductor device | |
| CN101750563B (en) | Structure for detecting short circuit of through holes or contact holes in semiconductor device | |
| TWI496299B (en) | Electrode structure and solar cell using the same | |
| CN115732490A (en) | Intelligent power module and device | |
| CN103809062B (en) | Electro-migration testing structure | |
| CN106981476B (en) | Semiconductor devices and forming method thereof | |
| CN203826374U (en) | Test structure | |
| CN103872018A (en) | Test structure for integrity of MOS transistor array gate oxide layer | |
| CN111508369A (en) | Display panel and display device | |
| CN112035006A (en) | Display panel | |
| CN105144360A (en) | Method and apparatus for monitoring semiconductor fabrication |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |