CN103809062A - Electromigration test structure - Google Patents
Electromigration test structure Download PDFInfo
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- CN103809062A CN103809062A CN201210442014.XA CN201210442014A CN103809062A CN 103809062 A CN103809062 A CN 103809062A CN 201210442014 A CN201210442014 A CN 201210442014A CN 103809062 A CN103809062 A CN 103809062A
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- short circuit
- monitoring line
- circuit monitoring
- wiring layer
- contact hole
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Abstract
The invention provides an electromigration test structure. One the basis of an existing electromigration test structure, two monitoring wires are formed at wiring layers with a predetermined distance at upper and lower surfaces of a tested conductive wire, and the monitoring wires are used for monitoring and measuring the short circuit failure caused by a projection formed by electromigration in a height direction.
Description
Technical field
The present invention relates to field of semiconductor devices, relate in particular to a kind of electro-migration testing structure.
Background technology
Electromigration (electromigration) is a kind of substance transfer phenomenon causing due to progressively moving of conductor intermediate ion, and it is to be shifted and caused by the momentum between conduction electrons and the metallic atom of diffusion.In the time that electromigration occurs, the part momentum of a moving electron is transferred to contiguous active ions, and this can cause this ion to leave original position.In the time that current density is larger, electronics forms electron wind (electron wind) from negative electrode anode displacement under the driving of electrostatic field force, and then can cause that the atom of huge quantity is away from their original position.Along with passage of time, electromigration meeting causes conductor, occurs fracture or breach and then cause stoping flowing of electricity in especially narrow wire, and this defect is called as cavity (void) or internal failure, i.e. open circuit.Electromigration also can cause the atom packing in conductor and form thrust (hillock) to proximity conductor drift, produces electrical connection unexpectedly, i.e. short circuit.Along with the characteristic dimension of semiconductor device constantly reduces, the size of metal interconnecting wires also constantly reduces, thereby causes current density constantly to increase, and the component failure being caused by electromigration is more remarkable.
In order to monitor the electromigration in semiconductor devices, prior art conventionally arranges electro-migration testing structure and monitors the impact of electromigration on semiconductor devices in semiconductor devices or in the Cutting Road of wafer.Electro-migration testing structure schematic diagram in prior art as shown in Figure 1, this electro-migration testing structure comprises that tested wire L1(shows its structure for convenience, interlayer dielectric layer is not shown), be positioned at the short circuit monitoring line L2 of same wiring layer with described tested wire L1, and be positioned at detection wire L3 and the L4 of another wiring layer; Wherein, short circuit monitoring line L2 comprises a leakage current measurement end E1, detect wire L3 and comprise current terminal S1 and voltage end F1, detect wire L4 and comprise measuring current end S2 and voltage end F2, and detect wire L3 lower surface and be connected with one end upper surface of tested wire L1 by through hole V1, detect wire L4 lower surface and be connected with the other end upper surface of tested wire L1 by through hole V2.While using this electro-migration testing structure, by the current terminal S1 and the S2 that detect wire L3 and L4, tested wire L1 is applied to electric current, make tested wire L1 produce electromigration, carry out voltage measurement by voltage end F1 and F2, and calculate resistance, judge by the variation of resistance whether tested wire L1 produces open failure; When tested wire L1 electromigration occurs and then produces after thrust, along with the increase gradually of thrust, its edge can contact with short circuit monitoring line L2, and then conducting short circuit monitoring line L2, therefore, can detect the tested wire L1 inefficacy that whether is short-circuited by measuring the electric current of leakage current measurement end E1 of short circuit monitoring line L2.
But, based on the electro-migration testing structure of prior art, because short circuit monitoring line L2 and tested wire L1 are in same layer, therefore, the thrust that tested wire L1 produces could judge tested wire L1 short-circuit failure by leakage current measurement end E1 while only contact with short circuit monitoring line L2 on length (the x direction in Fig. 1) or width (the y direction in Fig. 1), the thrust height that tested wire L1 is produced exceedes and is limited to other and closes on metal line layer and be short-circuited to lose efficacy and cannot measure, therefore, there is defect in electro-migration testing structure of the prior art.
Summary of the invention
In view of this, the invention provides a kind of electro-migration testing structure, with solve existing electro-migration testing structure cannot measure with close on metal line layer be short-circuited lost efficacy problem.
The technological means that the present invention adopts is as follows: a kind of electro-migration testing structure, comprises being positioned at the tested wire of the first wiring layer and the first short circuit monitoring line, being positioned at two of the second wiring layer on the first wiring layer and detecting wires;
Described two each that detect in wires include current terminal and voltage end, and described two detected wires and be electrically connected with tested wire by first contact hole respectively,
Described the first short circuit monitoring line comprises a leakage current measurement end; Described the first short circuit monitoring line closed-loop is around described tested wire, and described the first short circuit monitoring line inward flange is all the first distance with the spacing at corresponding detected wire edge;
Wherein, described electro-migration testing structure also comprises described the 3rd short circuit monitoring line that is positioned at the described second short circuit monitoring line of the 3rd wiring layer and is positioned at the 4th wiring layer; Described the 3rd wiring layer is between the first wiring layer and the second wiring layer, and described the 4th wiring layer is positioned under the first wiring layer; Described the second short circuit monitoring line covers the upper surface of described the first short circuit monitoring line, and the minor increment of described the second short circuit monitoring line lower surface and described the first short circuit monitoring line is the first spacing, described the first contact hole and described the second short circuit monitoring line insulation arrange; Described the 3rd short circuit monitoring line covers the lower surface of described the first short circuit monitoring line, and the minor increment of the lower surface of the upper surface of described the 3rd short circuit monitoring line and described the first short circuit monitoring line is the first spacing; Described the second short circuit monitoring line and the 3rd short circuit monitoring line are electrically connected with the first short circuit monitoring line by the second contact hole.
Further, described the second short circuit monitoring line also comprises and two two insulated hole that described the first contact hole position is corresponding, each described the first contact hole is electrically connected with tested wire through the described insulated hole of its correspondence, and distance between the outside surface of each described the first contact hole and the inside surface of insulated hole corresponding to this first contact hole is greater than the first spacing.
Further, two described the first contact holes comprise the Part II under Part I and the second short circuit monitoring line lower surface being positioned on the second short circuit monitoring line upper surface, and described Part I is connected by the pad that is arranged in described insulated hole with Part II; Distance between the inside surface of the outside surface of described pad and corresponding insulated hole is not less than the first spacing.
Further, the size of described the first spacing is determined by integrated circuit minimum design rule.
Adopt electro-migration testing structure provided by the present invention, on the basis of existing electro-migration testing structure, form two monitoring lines, the short-circuit failure that the thrust being formed by electromigration in order to monitoring and measurement causes in short transverse in the wiring layer of tested wire upper and lower surface spacing preset distance.
Accompanying drawing explanation
Fig. 1 is the typical structure schematic diagram of electro-migration testing structure in prior art;
Fig. 2 is the schematic diagram of a kind of electro-migration testing structure of the present invention;
Fig. 3 is the front view of Fig. 2.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearer, referring to the accompanying drawing embodiment that develops simultaneously, the present invention is described in further detail.
As shown in Figures 2 and 3, and in conjunction with Fig. 1, the invention provides a kind of electro-migration testing structure, comprising:
Be positioned at the tested wire L1 of the first wiring layer and the first short circuit monitoring line L2, be positioned at two of the second wiring layer on the first wiring layer and detect wire L3 and L4;
Detect wire L3 and comprise current terminal S1 and voltage end F1, and detection wire L3 is electrically connected with tested wire L1 by a first contact hole V1; Detect wire L4 and comprise current terminal S2 and voltage end F2, and detection wire L4 is electrically connected with tested wire by another first contact hole V2;
The first short circuit monitoring line L2 comprises a leakage current measurement end E1, and leakage current measurement end E1 is made up of first short circuit monitoring line L2 extended end in the first wiring layer; The first short circuit monitoring line L2 closed-loop is around tested wire L1, and the first short circuit monitoring line L2 inward flange is all first apart from d1 with the spacing at corresponding detected wire d1 edge;
Electro-migration testing structure also comprises the 3rd short circuit monitoring line L6 that is positioned at the second short circuit monitoring line L5 of the 3rd wiring layer and is positioned at the 4th wiring layer; The 3rd wiring layer is between the first wiring layer and the second wiring layer, and the 4th wiring layer is positioned under the first wiring layer;
Wherein, the second short circuit monitoring line L5 covers the upper surface of the first short circuit monitoring line L1, and the minor increment of the second short circuit monitoring line L5 lower surface and the first short circuit monitoring line L2 is the first spacing d1, the first contact hole V1 and V2 and the second short circuit monitoring line L5 insulation arrange, as preferably, adopt in the present embodiment following insulation to arrange: the second short circuit monitoring line L5 is provided with corresponding with two the first contact hole position V1 and V2 two insulated hole H1 and H2, the first contact hole V1 and V2 are respectively through its corresponding insulated hole H1, H2 is electrically connected with tested wire L1, and the distance between the inside surface of the insulated hole that the outside surface of each the first contact hole and this first contact hole are corresponding is not less than the first spacing d1, as further scheme, in order to be applicable to existing contact hole manufacturing process, the first contact hole V1 and V2 comprise respectively the Part I V1a and the V2a that are positioned on the second short circuit monitoring line L5 upper surface, and be positioned at V1b and the V2b under the second short circuit monitoring line L5 lower surface, and Part I V1a, V2a are connected by the pad (not shown) that is arranged in corresponding insulated hole H1, H2 with Part II V1b, V2b, and distance between the outside surface of pad and the inside surface of corresponding insulated hole is not less than the first spacing d1.
The 3rd short circuit monitoring line L6 covers the lower surface of the first short circuit monitoring line L2, and the minor increment of the lower surface of the upper surface of the 3rd short circuit monitoring line L6 and the first short circuit monitoring line L2 is the first spacing d1; The second short circuit monitoring line L5 and the 3rd short circuit monitoring line L6 are electrically connected with the first short circuit monitoring line L2 by the second contact hole V3, wherein, as preferably, the second short circuit monitoring line L5 and the 3rd short circuit monitoring line L6 monitor line L2 by multiple the second contact hole V3 with the first short circuit and are electrically connected.
It should be noted that, the size of the first spacing d1 is determined by minimum rule in integrated circuit (IC) design in this application, and as well known to a person skilled in the art, according to different technologies node, this first spacing d1 has different sizes.
While using electro-migration testing structure provided by the present invention to test, by the current terminal S1 and the S2 that detect wire L3 and L4, tested wire L1 is applied to electric current, make tested wire L1 produce electromigration, carry out voltage measurement by voltage end F1 and F2, and calculate resistance, judge by the variation of resistance whether tested wire L1 produces open failure; When tested wire L1 electromigration occurs and then produces after thrust, along with the increase gradually of thrust, on length (x direction) and width (y direction), the edge of thrust contacts with short circuit monitoring line L2, or on height (z direction), the edge of thrust contacts with the second short circuit monitoring line L5 or the 3rd short circuit monitoring line L6, all can conducting short circuit monitoring line L2, therefore, can in three directions, detect the tested wire L1 inefficacy that whether is short-circuited by measuring the electric current of leakage current measurement end E1 of short circuit monitoring line L2.
In sum, adopt electro-migration testing structure provided by the present invention, on the basis of existing electro-migration testing structure, form two monitoring lines, the short-circuit failure that the thrust being formed by electromigration in order to monitoring and measurement causes in short transverse in the wiring layer of tested wire upper and lower surface spacing preset distance.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of making, be equal to replacement, improvement etc., within all should being included in the scope of protection of the invention.
Claims (4)
1. an electro-migration testing structure, comprises being positioned at the tested wire of the first wiring layer and the first short circuit monitoring line, being positioned at two of the second wiring layer on the first wiring layer and detecting wires;
Described two each that detect in wires include current terminal and voltage end, and described two detected wires and be electrically connected with tested wire by first contact hole respectively,
Described the first short circuit monitoring line comprises a leakage current measurement end; Described the first short circuit monitoring line closed-loop is around described tested wire, and described the first short circuit monitoring line inward flange is all the first distance with the spacing at corresponding detected wire edge;
It is characterized in that, described electro-migration testing structure also comprises described the 3rd short circuit monitoring line that is positioned at the described second short circuit monitoring line of the 3rd wiring layer and is positioned at the 4th wiring layer; Wherein, described the 3rd wiring layer is between the first wiring layer and the second wiring layer, and described the 4th wiring layer is positioned under the first wiring layer; Described the second short circuit monitoring line covers the upper surface of described the first short circuit monitoring line, and the minor increment of described the second short circuit monitoring line lower surface and described the first short circuit monitoring line is the first spacing, described the first contact hole and described the second short circuit monitoring line insulation arrange; Described the 3rd short circuit monitoring line covers the lower surface of described the first short circuit monitoring line, and the minor increment of the lower surface of the upper surface of described the 3rd short circuit monitoring line and described the first short circuit monitoring line is the first spacing; Described the second short circuit monitoring line and the 3rd short circuit monitoring line are electrically connected with the first short circuit monitoring line by the second contact hole.
2. electro-migration testing structure according to claim 1, it is characterized in that, described the second short circuit monitoring line also comprises and two two insulated hole that described the first contact hole position is corresponding, each described the first contact hole is electrically connected with tested wire through the described insulated hole of its correspondence, and distance between the outside surface of each described the first contact hole and the inside surface of insulated hole corresponding to this first contact hole is not less than the first spacing.
3. electro-migration testing structure according to claim 2, it is characterized in that, two described the first contact holes comprise the Part II under Part I and the second short circuit monitoring line lower surface being positioned on the second short circuit monitoring line upper surface, and described Part I is connected by the pad that is arranged in described insulated hole with Part II; Distance between the inside surface of the outside surface of described pad and corresponding insulated hole is not less than the first spacing.
4. according to the electro-migration testing structure described in claims 1 to 3 any one, it is characterized in that, the size of described the first spacing is determined by integrated circuit minimum design rule.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210442014.XA CN103809062B (en) | 2012-11-07 | 2012-11-07 | Electro-migration testing structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210442014.XA CN103809062B (en) | 2012-11-07 | 2012-11-07 | Electro-migration testing structure |
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| CN103809062A true CN103809062A (en) | 2014-05-21 |
| CN103809062B CN103809062B (en) | 2016-07-06 |
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| CN201210442014.XA Active CN103809062B (en) | 2012-11-07 | 2012-11-07 | Electro-migration testing structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103033740A (en) * | 2012-12-20 | 2013-04-10 | 工业和信息化部电子第五研究所 | Electro-migration early warning circuit of integrated circuit |
| CN105810664A (en) * | 2016-04-07 | 2016-07-27 | 上海华力微电子有限公司 | Electromigration structure of test metal line |
| CN109801855A (en) * | 2019-01-22 | 2019-05-24 | 上海华虹宏力半导体制造有限公司 | For detecting WAT test device, preparation method and the test method of metal connecting line protuberance |
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| JPH0786362A (en) * | 1993-09-17 | 1995-03-31 | Oki Electric Ind Co Ltd | Wiring evaluating specimen and formation thereof |
| US5898706A (en) * | 1997-04-30 | 1999-04-27 | International Business Machines Corporation | Structure and method for reliability stressing of dielectrics |
| JP2000200818A (en) * | 1999-01-05 | 2000-07-18 | Nec Corp | Teg for electromigration evaluation |
| JP2000243800A (en) * | 1999-02-17 | 2000-09-08 | Sharp Corp | Electromigration resistance evaluation method of wiring |
| US20030034558A1 (en) * | 2001-08-14 | 2003-02-20 | Eiichi Umemura | Inspection pattern, inspection method, and inspection system for detection of latent defect of multi-layer wiring structure |
| CN102446900A (en) * | 2010-10-12 | 2012-05-09 | 上海华虹Nec电子有限公司 | Electromigration reliability test structure and making method for multilayer of metal interconnected metal wires |
| CN102760727A (en) * | 2011-04-27 | 2012-10-31 | 中芯国际集成电路制造(上海)有限公司 | Testing device and method of electromigration of interconnection line |
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2012
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Patent Citations (7)
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|---|---|---|---|---|
| JPH0786362A (en) * | 1993-09-17 | 1995-03-31 | Oki Electric Ind Co Ltd | Wiring evaluating specimen and formation thereof |
| US5898706A (en) * | 1997-04-30 | 1999-04-27 | International Business Machines Corporation | Structure and method for reliability stressing of dielectrics |
| JP2000200818A (en) * | 1999-01-05 | 2000-07-18 | Nec Corp | Teg for electromigration evaluation |
| JP2000243800A (en) * | 1999-02-17 | 2000-09-08 | Sharp Corp | Electromigration resistance evaluation method of wiring |
| US20030034558A1 (en) * | 2001-08-14 | 2003-02-20 | Eiichi Umemura | Inspection pattern, inspection method, and inspection system for detection of latent defect of multi-layer wiring structure |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103033740A (en) * | 2012-12-20 | 2013-04-10 | 工业和信息化部电子第五研究所 | Electro-migration early warning circuit of integrated circuit |
| CN103033740B (en) * | 2012-12-20 | 2015-08-26 | 工业和信息化部电子第五研究所 | The electromigration early warning circuit of integrated circuit |
| US9329228B2 (en) | 2012-12-20 | 2016-05-03 | Fifth Electronics Research Institute Of Ministry Of Industry And Information Techonoly | Prognostic circuit of electromigration failure for integrated circuit |
| CN105810664A (en) * | 2016-04-07 | 2016-07-27 | 上海华力微电子有限公司 | Electromigration structure of test metal line |
| CN105810664B (en) * | 2016-04-07 | 2018-06-01 | 上海华力微电子有限公司 | Test the electromigration structure of metal wire |
| CN109801855A (en) * | 2019-01-22 | 2019-05-24 | 上海华虹宏力半导体制造有限公司 | For detecting WAT test device, preparation method and the test method of metal connecting line protuberance |
| CN109801855B (en) * | 2019-01-22 | 2021-01-29 | 上海华虹宏力半导体制造有限公司 | WAT testing device for detecting uplift of metal connecting wire, preparation method and testing method |
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| Publication number | Publication date |
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| CN103809062B (en) | 2016-07-06 |
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