CN109801855A - For detecting WAT test device, preparation method and the test method of metal connecting line protuberance - Google Patents
For detecting WAT test device, preparation method and the test method of metal connecting line protuberance Download PDFInfo
- Publication number
- CN109801855A CN109801855A CN201910057319.0A CN201910057319A CN109801855A CN 109801855 A CN109801855 A CN 109801855A CN 201910057319 A CN201910057319 A CN 201910057319A CN 109801855 A CN109801855 A CN 109801855A
- Authority
- CN
- China
- Prior art keywords
- metal
- line width
- metal layer
- layer
- protuberance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention discloses a kind of for detecting WAT test device, preparation method and the measurement method of metal connecting line protuberance.The WAT test device swelled for detecting metal connecting line, it include: preceding metal layer and rear metal layer, the preceding metal layer has the metal wire of at least one default line width, and interlayer dielectric layer is set between the preceding metal layer and the rear metal layer, and the metal wire of the default line width of the preceding metal layer is electrically connected with the first testing cushion, the rear metal layer is electrically connected with the second testing cushion.WAT test device of the present invention for detecting metal connecting line protuberance can effectively monitor metal connecting line protuberance to the dependence of metal line width, and obtain crucial metal line width, provide foundation for domain rule.Meanwhile the WAT test device for detecting metal connecting line protuberance can also monitor the reliability of interlayer dielectric layer, such as TDDB.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of WAT for detecting metal connecting line protuberance to survey
Trial assembly sets, preparation method and test method.
Background technique
As Product Process continues miniature, back segment metal interlayer medium (Inter Metal Dielectric, IMD) thickness
Also it can persistently be thinned, when dielectric thickness can compare with metal bump (Hillock) flaw height, the flat chemical industry of inter-level dielectric
Interlayer dielectric layer will certainly be ground protuberance (Hillock) defect for penetrating and touching front layer metal by skill (IMD CMP), this will
It will cause series of process problem, for example lapping liquid (CMP Slurry) corrosion front layer metal forms empty (Metal Void),
And subsequent metal deposition, such as via hole titanium, via hole titanium nitride, via hole tungsten etc. enter the cavity, thus cause metal layer it
Between short circuit.
As those skilled in the art, it is easy to know ground, metal bump (Hillock) defect system movement of metallic shape
At, therefore there is correlation with the line width of metal.It is apparent that a possibility that bulk metal formation size larger protuberance, is also higher.
Seek a kind of to have become art technology for detecting metal connecting line protuberance and the electrical testing structure of the correlation of metal line width
One of personnel's urgent problem to be solved.
Therefore in view of the problems of the existing technology, this case designer relies on the experience for being engaged in the industry many years, actively studies
Improvement then has of the invention a kind of for detecting WAT test device, preparation method and the test method of metal connecting line protuberance.
Summary of the invention
The first purpose of the present invention is to be directed in the prior art, when dielectric thickness and metal bump (Hillock) defect are high
When degree can compare, before interlayer dielectric layer grinding will certainly be penetrated and be touched by inter-level dielectric flatening process (IMD CMP)
The defects of protuberance (Hillock) defect of layer metal, this will will cause series of process problem, provides one kind and is used to detect metal
The WAT test device of line protuberance.
The second purpose of the present invention is to be directed in the prior art, when dielectric thickness and metal bump (Hillock) defect are high
When degree can compare, before interlayer dielectric layer grinding will certainly be penetrated and be touched by inter-level dielectric flatening process (IMD CMP)
The defects of protuberance (Hillock) defect of layer metal, this will will cause series of process problem, provides one kind and is used to detect metal
The test method of the WAT test device of line protuberance.
The purpose of third of the present invention is to be directed in the prior art, when dielectric thickness and metal bump (Hillock) defect are high
When degree can compare, before interlayer dielectric layer grinding will certainly be penetrated and be touched by inter-level dielectric flatening process (IMD CMP)
The defects of protuberance (Hillock) defect of layer metal, this will will cause series of process problem, provides one kind and is used to detect metal
The preparation method of the WAT test device of line protuberance.
The first purpose to realize the present invention, the present invention provide a kind of for detecting the WAT test dress of metal connecting line protuberance
It sets, it is described for detecting the WAT test device of metal connecting line protuberance, comprising: preceding metal layer and rear metal layer, the preceding metal layer
Metal wire at least one default line width, and interlayer dielectric layer is set between the preceding metal layer and the rear metal layer,
And the metal wire of the default line width of the preceding metal layer is electrically connected with the first testing cushion, the rear metal layer and the second testing cushion electricity
Connection.
Optionally, described for detecting the WAT test device of metal connecting line protuberance, comprising: preceding metal layer and rear metal layer,
The metal that there is the preceding metal layer metal wire of the first default line width, the metal wire of the second default line width, third to preset line width
Line, and interlayer dielectric layer is set between the preceding metal layer and the rear metal layer, and the first of the preceding metal layer is default
The metal wire of line width is electrically connected with testing cushion, and the metal wire of the second default line width of the preceding metal layer is electrically connected with testing cushion,
The metal wire that the third of the preceding metal layer presets line width is electrically connected with testing cushion.
Optionally, the metal wire interval setting of the first default line width of the preceding metal layer, and the first default line width
It is 1 μm, spacing is 0.6 μm；The metal wire interval of second default line width of the preceding metal layer is arranged, and the second default line
Width is 2 μm, and spacing is 0.6 μm；The third of the preceding metal layer presets the metal wire interval setting of line width, and the third is default
Line width is 3 μm, and spacing is 0.6 μm.
Optionally, the metal wire of the first default line width of the preceding metal layer, the metal wire of the second default line width, third are pre-
If the spacing between the metal wire of line width is 1 μm.
It is optionally, described for detecting the WAT test device of metal connecting line protuberance, including preceding metal layer and rear metal layer,
The preceding metal layer has a metal wire of the metal wire of the 4th default line width, the 5th default line width, and in the preceding metal layer and
Interlayer dielectric layer, and the metal wire of the 4th default line width of the preceding metal layer and testing cushion electricity are set between metal layer after described
Connection, the metal wire of the 5th default line width of the preceding metal layer are electrically connected with testing cushion.
Optionally, the metal wire interval setting of the 4th default line width of the preceding metal layer, and the 4th default line width
It is 4 μm, spacing is 0.6 μm；5th default line width of the metal wire of the 5th default line width of the preceding metal layer is 12 μm.
Optionally, between the metal wire of the 4th default line width of the preceding metal layer, the metal wire of the 5th default line width
Spacing is 1 μm.
Optionally, the WAT test device for detecting metal connecting line protuberance includes preceding metal layer, and the preceding metal
Layer is in blocky setting.
The second purpose to realize the present invention, the present invention is provided to detect metal connecting line protuberance WAT test device it
Test method.When the WAT test device for detecting metal connecting line protuberance carries out metal connecting line protuberance size and metal wire
When wide relationship monitoring, pass through the metal in the metal wire of the first default line width with the preceding metal layer, the second default line width
Apply low-voltage in the testing cushion that the metal wire that line, third preset line width is electrically connected respectively, and on the rear metal layer
Apply high voltage, and then implement leakage tests, the pass to form the metal line width of preceding metal layer of metal connecting line protuberance can be obtained
Key size.
Optionally, when it is described for detect metal connecting line protuberance WAT test device carry out metal connecting line protuberance size with
When the relationship monitoring of metal line width, pass through the metal wire in the 4th default line width with the preceding metal layer, the 5th default line width
The testing cushion that is electrically connected of metal wire on apply low-voltage respectively, and apply high voltage on metal layer after described, in turn
Implement leakage tests, the critical size to form the metal line width of preceding metal layer of metal connecting line protuberance can be obtained.
Optionally, the WAT test device when described for detecting metal connecting line protuberance carries out the time phase of interlayer dielectric layer
When closing dielectric breakdown monitoring, by applying low-voltage, and the metal after described in the testing cushion being electrically connected with the preceding metal layer
Apply high voltage on layer, and then implements accumulation voltage distribution tests.
Third purpose to realize the present invention, the present invention is provided to detect metal connecting line protuberance WAT test device it
Preparation method.The preparation method of the WAT test device for being used to detect metal connecting line protuberance, comprising:
Execute step S1: preceding metal layer sputtering sedimentation, photoetching, etching；
Execute step S2: interlayer dielectric layer deposition, chemical mechanical grinding；
Execute step S3: via layer photoetching, etching；
Execute step S4: rear metal layer sputtering sedimentation, photoetching, etching.
In conclusion the WAT test device of the present invention for detecting metal connecting line protuberance can effectively monitor metal
Line swells the dependence to metal line width, and obtains crucial metal line width, provides foundation for domain rule.Meanwhile it is described
WAT test device for detecting metal connecting line protuberance can also monitor the reliability of interlayer dielectric layer, such as TDDB.
Detailed description of the invention
Fig. 1 show the present invention for detecting the WAT schematic structural diagram of testing device of metal connecting line protuberance；
Fig. 2 show the preparation method flow chart of WAT test device of the present invention for detecting metal connecting line protuberance；
The structure that Fig. 3 show WAT test device of the first embodiment of the invention for detecting metal connecting line protuberance is shown
It is intended to；
The structure that Fig. 4 show WAT test device of the second embodiment of the invention for detecting metal connecting line protuberance is shown
It is intended to；
The structure that Fig. 5 show WAT test device of the third embodiment of the invention for detecting metal connecting line protuberance is shown
It is intended to.
Specific embodiment
By the present invention will be described in detail create technology contents, construction feature, reached purpose and efficacy, below in conjunction with reality
It applies example and attached drawing is cooperated to be described in detail.
As Product Process continues miniature, back segment metal interlayer medium (Inter Metal Dielectric, IMD) thickness
Also it can persistently be thinned, when dielectric thickness can compare with metal bump (Hillock) flaw height, the flat chemical industry of inter-level dielectric
Interlayer dielectric layer will certainly be ground protuberance (Hillock) defect for penetrating and touching front layer metal by skill (IMD CMP), this will
It will cause series of process problem, for example lapping liquid (CMP Slurry) corrosion front layer metal forms empty (Metal Void),
And subsequent metal deposition, such as via hole titanium, via hole titanium nitride, via hole tungsten etc. enter the cavity, thus cause metal layer it
Between short circuit.
As those skilled in the art, it is easy to know ground, metal bump (Hillock) defect system movement of metallic shape
At, therefore there is correlation with the line width of metal.It is apparent that a possibility that bulk metal formation size larger protuberance, is also higher.
Seek a kind of to have become art technology for detecting metal connecting line protuberance and the electrical testing structure of the correlation of metal line width
One of personnel's urgent problem to be solved.
Referring to Fig. 1, Fig. 1 show the structural representation of WAT test device of the present invention for detecting metal connecting line protuberance
Figure.The WAT test device 1 swelled for detecting metal connecting line, including preceding metal layer 11 and rear metal layer 12, it is golden before described
Belong to the metal wire that layer 11 has at least one default line width, and layer is set between the preceding metal layer 11 and the rear metal layer 12
Between dielectric layer 13, and the metal wire of the default line width of the preceding metal layer 11 is electrically connected with the first testing cushion 14, the metal afterwards
Layer 12 is electrically connected with the second testing cushion 15.
Referring to Fig. 2, Fig. 2 show the preparation method of WAT test device of the present invention for detecting metal connecting line protuberance
Flow chart.The preparation method of the WAT test device 1 for being used to detect metal connecting line protuberance, comprising:
Execute step S1: preceding 11 sputtering sedimentation of metal layer, photoetching, etching；
Execute step S2: the deposition of interlayer dielectric layer 13, chemical mechanical grinding；
Execute step S3: via layer photoetching, etching；
Execute step S4: 12 sputtering sedimentation of rear metal layer, photoetching, etching.
In order to more intuitively disclose the technical solution of the present invention, the beneficial effect of the present invention is highlighted, now in conjunction with specific implementation
Mode is illustrated the structure of the present invention for detecting the WAT test device 1 of metal connecting line protuberance and working principle,
In specific embodiment, the metal wire quantity of the preceding metal layer 11, line width etc. are only to enumerate, and are not construed as the skill to the present invention
The limitation of art scheme.
First embodiment
It is unrestricted to enumerate as the first embodiment of the present invention such as described for detecting metal connecting line protuberance
WAT test device 1 include preceding metal layer 11, and the preceding metal layer 11 has the metal wire 111a of the first default line width, the
The metal wire 111b of two default line widths, third preset the metal wire 111c of line width.
Referring to Fig. 3, Fig. 3 show first embodiment of the invention for detecting the WAT test dress of metal connecting line protuberance
The structural schematic diagram set.The WAT test device 1 swelled for detecting metal connecting line, including preceding metal layer 11 and rear metal
Layer 12, the preceding metal layer 11 have the metal wire 111a of the first default line width, the metal wire 111b of the second default line width, third
The metal wire 111c of default line width, and interlayer dielectric layer 13 is set between the preceding metal layer 11 and the rear metal layer 12,
And the metal wire 111a of the first default line width of the preceding metal layer 11 is electrically connected with testing cushion 141a, the preceding metal layer 11 it
The metal wire 111b of second default line width is electrically connected with testing cushion 141b, and the third of the preceding metal layer 11 presets the metal of line width
Line 111c is electrically connected with testing cushion 141c.
In the present embodiment, it is grand to carry out metal connecting line for the WAT test device 1 when described for detecting metal connecting line protuberance
When playing relationship monitoring of the size with metal line width, pass through the metal wire in the first default line width with the preceding metal layer 11
111a, the metal wire 111b of the second default line width, third preset line width metal wire 111c be electrically connected testing cushion 141a,
Apply low-voltage on testing cushion 141b, testing cushion 141c respectively, and applies high voltage on the rear metal layer 12, and then implement
Leakage tests can obtain the critical size to form the metal line width of preceding metal layer 11 of metal connecting line protuberance.
As those skilled in the art, it is readily appreciated that ground, such as the preceding metal layer 11 are the first metal layer or the second gold medal
Belong to layer, correspondingly, then the rear metal layer 12 is second metal layer or third metal layer.
More specifically, the interval metal wire 111a of the first default line width of the preceding metal layer 11 is arranged, and described first
Default line width is 1 μm, and spacing is 0.6 μm.The interval metal wire 111b of second default line width of the preceding metal layer 11 is arranged, and
The second default line width is 2 μm, and spacing is 0.6 μm.The third of the preceding metal layer 11 is preset between the metal wire 111c of line width
Every setting, and it is 3 μm that the third, which presets line width, and spacing is 0.6 μm.
Wherein, the rear metal layer 12 and the preceding metal layer 11 are staggeredly stacked, the transverse direction outside of the rear metal layer 12
Along be all larger than the preceding metal layer 11 the first default line width metal wire 111a and third preset line width metal wire 111c it
Outer edge, and spacing is 1.4 μm.The longitudinal direction outer edge of metal layer 12 is all larger than the preceding metal layer 11 after described first is preset
The metal wire 111a of line width, the metal wire 111b of the second default line width, third preset the outer edge of the metal wire 111c of line width, and
Spacing is 1 μm.Preferably, the metal wire 111a of the first default line width of the preceding metal layer 11, the second default line width metal
The spacing that line 111b, third are preset between the metal wire 111c of line width is preferably 1 μm.
Second embodiment
It is unrestricted to enumerate as the second embodiment of the present invention such as described for detecting metal connecting line protuberance
WAT test device 1 include preceding metal layer 11, and the preceding metal layer 11 has the metal wire 112a of the 4th default line width, the
The metal wire 112b of five default line widths.Wherein, the 4th default line width of the metal wire 112a of the preceding metal layer 11 and it is described before
The 5th default line width of the metal wire 112b of metal layer 11 is the metal line width most paid close attention in fabrication of semiconductor device.
Referring to Fig. 4, Fig. 4 show second embodiment of the invention for detecting the WAT test dress of metal connecting line protuberance
The structural schematic diagram set.The WAT test device 1 swelled for detecting metal connecting line, including preceding metal layer 11 and rear metal
Layer 12, the preceding metal layer 11 have a metal wire 112b of the metal wire 112a of the 4th default line width, the 5th default line width, and
Interlayer dielectric layer 13 is set between the preceding metal layer 11 and the rear metal layer 12, and the 4th of the preceding metal layer 11 is default
The metal wire 112a of line width is electrically connected with testing cushion 142a, the metal wire 112b of the 5th default line width of the preceding metal layer 11 with
Testing cushion 142b electrical connection.
In the present embodiment, it is grand to carry out metal connecting line for the WAT test device 1 when described for detecting metal connecting line protuberance
When playing relationship monitoring of the size with metal line width, pass through the metal wire in the 4th default line width with the preceding metal layer 11
112a, the 5th default line width metal wire 112b the testing cushion 142a, the testing cushion 142b that are electrically connected on apply low electricity respectively
Pressure, and apply high voltage on the rear metal layer 12, and then implement leakage tests, it can obtain to form metal connecting line protuberance
The critical size of the metal line width of preceding metal layer 11.
As those skilled in the art, it is readily appreciated that ground, such as the preceding metal layer 11 are the first metal layer or the second gold medal
Belong to layer, correspondingly, then the rear metal layer 12 is second metal layer or third metal layer.
More specifically, the interval metal wire 112a of the 4th default line width of the preceding metal layer 11 is arranged, and the described 4th
Default line width is 4 μm, and spacing is 0.6 μm.The second of the metal wire 112b of 5th default line width of the preceding metal layer 11 is default
Line width is 12 μm.
Wherein, the rear metal layer 12 and the preceding metal layer 11 are staggeredly stacked, the transverse direction outside of the rear metal layer 12
Along be all larger than the preceding metal layer 11 the 4th default line width metal wire 112a and the 5th default line width metal wire 112b it
Outer edge, and spacing is 2.3 μm.The longitudinal direction outer edge of metal layer 12 is all larger than the preceding metal layer 11 after described the 4th presets
The metal wire 112b of the metal wire 112a of line width, the 5th default line width, and spacing is 1 μm.Preferably, the preceding metal layer 11 it
Spacing between the metal wire 112a of 4th default line width, the metal wire 112b of the 5th default line width is preferably 1 μm.
Third embodiment
It is unrestricted to enumerate as the third embodiment of the present invention such as described for detecting metal connecting line protuberance
WAT test device 1 include preceding metal layer 11, and the preceding metal layer 11 is in blocky setting, for monitoring interlayer dielectric layer 13
Time associated media puncture (Time Dependent Dielectric Breakdown, TDDB).
Referring to Fig. 5, Fig. 5 show third embodiment of the invention for detecting the WAT test dress of metal connecting line protuberance
The structural schematic diagram set.The WAT test device 1 swelled for detecting metal connecting line, including preceding metal layer 11 and rear metal
Layer 12, for the preceding metal layer 11 in blocky setting, the time associated media for monitoring interlayer dielectric layer 13 punctures (Time
Dependent Dielectric Breakdown, TDDB), and set between the preceding metal layer 11 and the rear metal layer 12
Interlayer dielectric layer 13 is set, and the preceding metal layer 11 is electrically connected with testing cushion 143a.
In the present embodiment, the WAT test device 1 when described for detecting metal connecting line protuberance carries out interlayer dielectric layer
13 time associated media breakdown (Time Dependent Dielectric Breakdown, TDDB) monitoring when, by with
The testing cushion 143a that the preceding metal layer 11 is electrically connected applies low-voltage, and applies high voltage on the rear metal layer 12, into
And implement accumulation voltage distribution (Buildup Voltage Distribution, Bvd) test.
It is apparent that the WAT test device 1 of the present invention for detecting metal connecting line protuberance can effectively monitor metal company
Line swells the dependence to metal line width, and obtains crucial metal line width, provides foundation for domain rule.Meanwhile the use
The reliability of interlayer dielectric layer 13, such as TDDB can be also monitored in the WAT test device 1 of detection metal connecting line protuberance.
In conclusion the WAT test device of the present invention for detecting metal connecting line protuberance can effectively monitor metal
Line swells the dependence to metal line width, and obtains crucial metal line width, provides foundation for domain rule.Meanwhile it is described
WAT test device for detecting metal connecting line protuberance can also monitor the reliability of interlayer dielectric layer, such as TDDB.
Those skilled in the art, can be to this hair it will be appreciated that without departing from the spirit or scope of the present invention
It is bright to carry out various modifications and modification.Thus, if any modification or modification fall into the protection of the appended claims and equivalent
When in range, it is believed that the present invention covers these modifications and variations.
Claims (12)
1. a kind of for detecting the WAT test device of metal connecting line protuberance, which is characterized in that described grand for detecting metal connecting line
The WAT test device risen, comprising: preceding metal layer and rear metal layer, the preceding metal layer have the metal of at least one default line width
Line, and interlayer dielectric layer, and the default line width of the preceding metal layer are set between the preceding metal layer and the rear metal layer
Metal wire be electrically connected with the first testing cushion, it is described after metal layer be electrically connected with the second testing cushion.
2. as described in claim 1 for detecting the WAT test device of metal connecting line protuberance, which is characterized in that described for examining
Survey the WAT test device of metal connecting line protuberance, comprising: preceding metal layer and rear metal layer, the preceding metal layer have first to preset
The metal wire of line width, the metal wire of the second default line width, third preset the metal wire of line width, and in the preceding metal layer and described
Interlayer dielectric layer is set between metal layer afterwards, and the metal wire of the first default line width of the preceding metal layer is electrically connected with testing cushion
It connects, the metal wire of the second default line width of the preceding metal layer is electrically connected with testing cushion, and the third of the preceding metal layer presets line
Wide metal wire is electrically connected with testing cushion.
3. as claimed in claim 2 for detecting the WAT test device of metal connecting line protuberance, which is characterized in that the preceding metal
The metal wire interval of the default line width of the first of layer is arranged, and the first default line width is 1 μm, and spacing is 0.6 μm；Gold before described
Belong to the metal wire interval setting of the second default line width of layer, and the second default line width is 2 μm, spacing is 0.6 μm；Before described
The third of metal layer presets the metal wire interval setting of line width, and it is 3 μm that the third, which presets line width, and spacing is 0.6 μm.
4. as claimed in claim 2 for detecting the WAT test device of metal connecting line protuberance, which is characterized in that the preceding metal
The metal wire of the default line width of the first of layer, the metal wire of the second default line width, third preset the spacing between the metal wire of line width
It is 1 μm.
5. as claimed in claim 2 for detecting the test method of the WAT test device of metal connecting line protuberance, which is characterized in that
When the relationship that the WAT test device for detecting metal connecting line protuberance carries out metal connecting line protuberance size and metal line width is supervised
When survey, by default with the metal wire of the first default line width, the metal wire of the second default line width, third of the preceding metal layer
Apply low-voltage in the testing cushion that the metal wire of line width is electrically connected respectively, and apply high voltage on the rear metal layer,
And then implement leakage tests, the critical size to form the metal line width of preceding metal layer of metal connecting line protuberance can be obtained.
6. as described in claim 1 for detecting the WAT test device of metal connecting line protuberance, which is characterized in that described for examining
The WAT test device of metal connecting line protuberance, including preceding metal layer and rear metal layer are surveyed, the preceding metal layer has the 4th default line
The metal wire of wide metal wire, the 5th default line width, and setting interlayer is situated between the preceding metal layer and the rear metal layer
Matter layer, and the metal wire of the 4th default line width of the preceding metal layer is electrically connected with testing cushion, the 5th of the preceding metal layer is pre-
If the metal wire of line width is electrically connected with testing cushion.
7. as claimed in claim 6 for detecting the WAT test device of metal connecting line protuberance, which is characterized in that the preceding metal
The metal wire interval of 4th default line width of layer is arranged, and the 4th default line width is 4 μm, and spacing is 0.6 μm；Gold before described
The 5th default line width for belonging to the metal wire of the 5th default line width of layer is 12 μm.
8. as claimed in claim 6 for detecting the WAT test device of metal connecting line protuberance, which is characterized in that the preceding metal
Spacing between the metal wire of the 4th default line width of layer, the metal wire of the 5th default line width is 1 μm.
9. as claimed in claim 6 for detecting the test method of the WAT test device of metal connecting line protuberance, which is characterized in that
When the relationship that the WAT test device for detecting metal connecting line protuberance carries out metal connecting line protuberance size and metal line width is supervised
When survey, by being electrically connected respectively with the metal wire of the 4th default line width of the preceding metal layer, the metal wire of the 5th default line width
Apply low-voltage in the testing cushion connect respectively, and apply high voltage on the rear metal layer, and then implement leakage tests,
Obtain the critical size for forming the metal line width of preceding metal layer of metal connecting line protuberance.
10. as described in claim 1 for detecting the WAT test device of metal connecting line protuberance, which is characterized in that described for examining
The WAT test device for surveying metal connecting line protuberance includes preceding metal layer, and the preceding metal layer is in blocky setting.
11. as claimed in claim 10 for detecting the test method of the WAT test device of metal connecting line protuberance, feature exists
In when the WAT test device for detecting metal connecting line protuberance carries out the time associated media breakdown prison of interlayer dielectric layer
When survey, by applying low-voltage in the testing cushion being electrically connected with the preceding metal layer, and apply high electricity on the rear metal layer
Pressure, and then implement accumulation voltage distribution tests.
12. as described in claim 1 for detecting the preparation method of the WAT test device of metal connecting line protuberance, which is characterized in that
The preparation method of the WAT test device for being used to detect metal connecting line protuberance, comprising:
Execute step S1: preceding metal layer sputtering sedimentation, photoetching, etching；
Execute step S2: interlayer dielectric layer deposition, chemical mechanical grinding；
Execute step S3: via layer photoetching, etching；
Execute step S4: rear metal layer sputtering sedimentation, photoetching, etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910057319.0A CN109801855B (en) | 2019-01-22 | 2019-01-22 | WAT testing device for detecting uplift of metal connecting wire, preparation method and testing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910057319.0A CN109801855B (en) | 2019-01-22 | 2019-01-22 | WAT testing device for detecting uplift of metal connecting wire, preparation method and testing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109801855A true CN109801855A (en) | 2019-05-24 |
| CN109801855B CN109801855B (en) | 2021-01-29 |
Family
ID=66559868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910057319.0A Active CN109801855B (en) | 2019-01-22 | 2019-01-22 | WAT testing device for detecting uplift of metal connecting wire, preparation method and testing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109801855B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030002030A (en) * | 2001-06-30 | 2003-01-08 | 주식회사 하이닉스반도체 | Method for detecting electromigration fail of metal line of semiconductor device |
| CN101018453A (en) * | 2006-02-09 | 2007-08-15 | 松下电器产业株式会社 | Wiring board and method for manufacturing the same and semiconductor device and method for manufacturing the same |
| CN103187400A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Silicon through hole detection structure and detection method |
| CN103594453A (en) * | 2012-08-15 | 2014-02-19 | 中芯国际集成电路制造(上海)有限公司 | Test structure for dielectric breakdown reliability analysis in integrated circuit and test method thereof |
| CN103809062A (en) * | 2012-11-07 | 2014-05-21 | 中芯国际集成电路制造(上海)有限公司 | Electromigration test structure |
| CN104282594A (en) * | 2014-10-20 | 2015-01-14 | 武汉新芯集成电路制造有限公司 | Test structure for monitoring performance of dielectric layers |
| US20150177319A1 (en) * | 2013-12-19 | 2015-06-25 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with copper hillock-detecting structures and methods for detecting copper hillocks using the same |
| CN206134676U (en) * | 2016-11-03 | 2017-04-26 | 中芯国际集成电路制造(北京)有限公司 | Detect cracked test structure between metal level |
-
2019
- 2019-01-22 CN CN201910057319.0A patent/CN109801855B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030002030A (en) * | 2001-06-30 | 2003-01-08 | 주식회사 하이닉스반도체 | Method for detecting electromigration fail of metal line of semiconductor device |
| CN101018453A (en) * | 2006-02-09 | 2007-08-15 | 松下电器产业株式会社 | Wiring board and method for manufacturing the same and semiconductor device and method for manufacturing the same |
| CN103187400A (en) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | Silicon through hole detection structure and detection method |
| CN103594453A (en) * | 2012-08-15 | 2014-02-19 | 中芯国际集成电路制造(上海)有限公司 | Test structure for dielectric breakdown reliability analysis in integrated circuit and test method thereof |
| CN103809062A (en) * | 2012-11-07 | 2014-05-21 | 中芯国际集成电路制造(上海)有限公司 | Electromigration test structure |
| US20150177319A1 (en) * | 2013-12-19 | 2015-06-25 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with copper hillock-detecting structures and methods for detecting copper hillocks using the same |
| CN104282594A (en) * | 2014-10-20 | 2015-01-14 | 武汉新芯集成电路制造有限公司 | Test structure for monitoring performance of dielectric layers |
| CN206134676U (en) * | 2016-11-03 | 2017-04-26 | 中芯国际集成电路制造(北京)有限公司 | Detect cracked test structure between metal level |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109801855B (en) | 2021-01-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105304614B (en) | A kind of test structure and test method | |
| TWI278646B (en) | Integrated circuit fault detection system and method | |
| US8618827B2 (en) | Measurement of electrical and mechanical characteristics of low-K dielectric in a semiconductor device | |
| TWI516745B (en) | Circuit and method for measuring capacitance and semiconductor chip | |
| CN107978537B (en) | Test structure and test unit | |
| WO2013100897A1 (en) | Damage monitor structure for through-silicon via (tsv) arrays | |
| CN102495291A (en) | Impedance frequency response method for measuring corrosion state of grounding network of transformer substation | |
| US9780007B2 (en) | LCR test circuit structure for detecting metal gate defect conditions | |
| US20150221567A1 (en) | Alternating open-ended via chains for testing via formation and dielectric integrity | |
| CN206148425U (en) | Back end technology reliability testing structure | |
| CN109801855A (en) | For detecting WAT test device, preparation method and the test method of metal connecting line protuberance | |
| CN104900629A (en) | Testing structure for detecting deviation | |
| CN103308095B (en) | To the detection of the environmental aspect in semi-conductor chip | |
| US9721854B2 (en) | Structure and method for in-line defect non-contact tests | |
| CN103822948A (en) | Testing method for semiconductor | |
| CN206308009U (en) | MEMS discharges length detection structure | |
| TW494232B (en) | Method and apparatus for inspecting simple-matrix type liquid crystal panel, and method and apparatus for inspecting plasma display panel | |
| CN103579033B (en) | A kind of weld pad for wafer acceptability test | |
| CN109309019B (en) | Test structure and test method | |
| CN104142459B (en) | Semiconductor detects circuit and detection method | |
| US8679864B2 (en) | Method and system for determining semiconductor characteristics | |
| CN104241251B (en) | The test structure of semiconductor devices | |
| Mendoza et al. | Advanced Methods of Detecting Physical Damages in Packaging and BEOL Interconnects | |
| CN106469662B (en) | The detection method of metal defect and the forming method of detection structure | |
| Barda et al. | In-Situ TEM Electrical Characterization of Void Formation and Growth Along Cu Interconnect Via: FIB Based Sample Preparation Method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |