CN204241624U - The test structure of voltage breakdown - Google Patents
The test structure of voltage breakdown Download PDFInfo
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- CN204241624U CN204241624U CN201420611821.4U CN201420611821U CN204241624U CN 204241624 U CN204241624 U CN 204241624U CN 201420611821 U CN201420611821 U CN 201420611821U CN 204241624 U CN204241624 U CN 204241624U
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- voltage breakdown
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Abstract
The utility model provides a kind of test structure of voltage breakdown, comprise the test sample needing to test voltage breakdown, the electrical fuse element of connecting with described test sample and electric current one-way conduction element, described electrical fuse element and electric current one-way conduction element in parallel are arranged; When adopting Voltage ramp test to measure voltage breakdown, when the insulation course on test sample is breakdown, the big current meeting blowout element of instantaneous generation, prevents the probe of the probe of testing from being burnt out by transient high-current, thus saves the expense of measurement; And due to the existence of electric current one-way conduction element, after fuse unit is blown, circuit still can conducting thus measure the electrical parameters such as voltage breakdown.
Description
Technical field
The utility model relates to integrated circuit testing field, is specifically related to a kind of test structure of voltage breakdown.
Background technology
Along with developing rapidly of microelectronic process engineering, the characteristic line breadth of semiconductor devices is more and more less, the width of metallized traces is more and more thinner, meanwhile the gate oxide thickness of semiconductor devices is also more and more thinner, and supply voltage not easily reduces, under gate oxide is operated in higher electric field intensity, thus the dielectric breakdown effect of gate oxide is made to have become more outstanding integrity problem.The not good semiconductor devices electrical quantity that will cause of gate oxide resistance to voltage is unstable, can cause puncturing of gate oxide further.
At present, constant voltage process, constant current anodizing process and Voltage ramp test are comprised to the primary evaluation approach in gate oxide life-span.Usually Voltage ramp test (V-ramp) is adopted when carrying out dielectric breakdown test to high tension apparatus, such as field effect transistor, use the test point of the probes touch field effect transistor of probe, electric current is measured by constantly increasing the voltage passing into grid, when gate oxide is breakdown, the big current of instantaneous generation can cause probe to burn pin, and test data not only can be caused abnormal, and need the probe that more renews, the waste of probe can be caused.
In order to solve the problem, when industry adopts Voltage ramp test to carry out dielectric breakdown test, the method for general employing setting current limit is avoided on gate oxide, apply too high voltage and is caused probe to burn pin.But for high tension apparatus, because its gate oxide thickness is thicker, when puncturing, instantaneous electric leakage is larger, when carrying out multiple sample test continuously, the accumulation of heating effect of current finally still can cause probe or test machine to damage, thus cannot obtain correct test result.
Utility model content
The purpose of this utility model is the test structure providing a kind of voltage breakdown, for solving the too high problem causing probe to burn pin of breakdown current in prior art.
For achieving the above object and other relevant objects, the utility model provides a kind of test structure of voltage breakdown, it comprises the test sample needing to test voltage breakdown, the electrical fuse element of connecting with described test sample and electric current one-way conduction element, described electrical fuse element and electric current one-way conduction element in parallel are arranged.
Optionally, the negative pole of described electric current one-way conduction element is connected with described gate oxide.
Optionally, described electric current one-way conduction element is diode.
Optionally, described diode comprises: Semiconductor substrate, the first dopant well in described Semiconductor substrate and the second dopant well, the shallow trench isolation laid respectively in the first doped region in described first dopant well and the second dopant well and the second doped region and the Semiconductor substrate between described first dopant well and the second dopant well.
Optionally, described Semiconductor substrate is P type substrate.
Optionally, described first dopant well is identical with the doping type of described first doped region, and described second dopant well is identical with the doping type of described second doped region; Described first dopant well is N-type trap, and described first doped region is N-type doped region, and the doping content of described first doped region is greater than the doping content of described first dopant well; Described second dopant well is P type trap, and described second doped region is P type doped region, and the doping content of described second doped region is greater than the doping content of described second dopant well.
Optionally, described electrical fuse element comprises fuse body, and in a tubular form, its material is metal or polysilicon to described fuse body.
Optionally, be also provided with fuse Connection Element at the two ends of described fuse body, electrical fuse element is connected with electric current one-way conduction element.
Optionally, described test sample is field effect transistor or grid oxygen electric capacity.
Compared with prior art, the test structure of voltage breakdown provided by the utility model, be in series with electrical fuse element and electric current one-way conduction element on the test specimen, described electrical fuse element and electric current one-way conduction element in parallel are arranged, when adopting Voltage ramp test to measure voltage breakdown, when the insulation course on test sample is breakdown, the big current meeting blowout element of instantaneous generation, prevent the probe of the probe of testing from being burnt out by transient high-current, thus save the expense of measurement; And due to the existence of electric current one-way conduction element, after fuse unit is blown, circuit still can conducting thus measure the electrical parameters such as voltage breakdown.
Accompanying drawing explanation
The schematic diagram of the test structure of the voltage breakdown that Fig. 1 provides for the utility model embodiment one.
The structural representation of diode in the test structure of the voltage breakdown that Fig. 2 provides for the utility model embodiment one.
The structural representation of fuse in the test structure of the voltage breakdown that Fig. 3 provides for the utility model embodiment one.
The schematic diagram of the test structure of the voltage breakdown that Fig. 4 provides for the utility model embodiment two.
Embodiment
For enabling above-mentioned purpose of the present utility model, feature and advantage become apparent more, are described in detail embodiment of the present utility model below in conjunction with accompanying drawing.
The utility model can utilize multiple substitute mode to realize; be illustrated below by preferred embodiment; certain the utility model is not limited to this specific embodiment, and the general replacement known by one of ordinary skilled in the art is encompassed in protection domain of the present utility model undoubtedly.
Secondly, the utility model utilizes schematic diagram to be described in detail, and when describing the utility model embodiment in detail, for convenience of explanation, general ratio partial enlargement disobeyed by schematic diagram, should in this, as to restriction of the present utility model.
The test structure of voltage breakdown provided by the utility model, comprise the test sample needing to test voltage breakdown, the electrical fuse element of connecting with described test sample and electric current one-way conduction element, described electrical fuse element and described electric current one-way conduction element in parallel are arranged.In the process of test, when in test sample, insulation course is breakdown, the big current meeting blowout element of instantaneous generation, the probe of the probe of testing is prevented to be burned, and because electric current one-way conduction element is in parallel with electrical fuse element, after electrical fuse element blows, circuit still can conducting, thus reaches the object measuring voltage breakdown.In the examples below, for described test sample for field effect transistor and grid oxygen electric capacity are described.It should be noted that, test sample is not limited to above-mentioned two kinds of devices, and the device measuring insulation course voltage breakdown that needs well known by persons skilled in the art is all applicable to this patent.
[embodiment one]
Please refer to Fig. 1, the test structure of its voltage breakdown provided for the utility model embodiment one, as shown in Figure 1, described test sample is field effect transistor, comprise grid 11, source class 12, drain electrode 13 and substrate 14, described grid 11 is in series with electrical fuse element 15 and electric current one-way conduction unit 16, and described electrical fuse element 15 is arranged in parallel with electric current one-way conduction element 16, and the negative pole of described electric current one-way conduction element 16 is connected with described grid 11.
In the present embodiment, described electric current one-way conduction element 16 is diode.As shown in Figure 2, described diode comprises: Semiconductor substrate 20, the first dopant well 21 in described Semiconductor substrate 20 and the second dopant well 22, the shallow trench isolation 25 laid respectively in the first doped region 23 in described first dopant well 21 and the second dopant well 22 and the second doped region 24 and the Semiconductor substrate 20 between described first dopant well 21 and the second dopant well 22.The doping content of described first doped region 23 is greater than the doping content of described first dopant well 21, the doping content of described second doped region 24 is greater than the doping content of described second dopant well 22, described first doped region 23 with the second doped region 24 for being connected with described field effect transistor.Described Semiconductor substrate 20 is P type substrate, and described first dopant well 21 is identical with the doping type of described first doped region 23, and described second dopant well 22 is identical with the doping type of described second doped region 24; Described first dopant well 21 is N-type trap, and described first doped region 23 is N-type doped region, and described second dopant well 22 is P type trap, and described second doped region 24 is P type doped region.In described diode, the second doped region 24 is positive pole, and the first doped region 23 is negative pole.
In the present embodiment, described electrical fuse element is equivalent to a resistance, can be blown, please refer to Fig. 3 when the electric current passed through is greater than to a certain degree, it is the structural representation of electrical fuse element in the present embodiment, as shown in Figure 3, described electrical fuse element 15 comprises fuse body 31, and described fuse body 31 in a tubular form, its material is metal or polysilicon, when the electric current passed through is excessive, described fuse body 31 can melt open circuit, prevents the card pin of the probe to test from causing damage.Also be provided with fuse Connection Element 32 at the two ends of described fuse body 31, be connected with electric current one-way conduction element 16 and field effect transistor for electrical fuse element 15.
Figure 1 shows that schematic diagram, in the structural drawing of reality, grid in field effect transistor and test point are connected with the two ends of diode by tinsel, also be connected with the two ends of electrical fuse element by tinsel simultaneously, be series in the test circuit of field effect transistor after diode is in parallel with electrical fuse element.
Please continue to refer to Fig. 1, Voltage ramp test is adopted to carry out dielectric breakdown, probe is adopted to measure, at stage of stress (stress phase), grid 11 passes into positive voltage, source class 12, the initial voltage of drain electrode 13 and substrate 14 is zero, test circuit is by electrical fuse element 15 conducting, the positive voltage passed into constantly increases, measure corresponding electric current, when voltage is increased to a certain degree, gate oxide is breakdown, produce transient high-current, described electrical fuse element 15 is blown, metering circuit disconnects, thus prevent big current from causing damage to the probe in the probe of contact test point, at measurement stage (Measure phase), grid 11 passes into negative voltage, and source class 12, drain electrode 13 and the initial voltage of substrate 14 are zero, and test circuit by diode current flow, thus measures breakdown current.
[embodiment two]
Please refer to Fig. 4, the schematic diagram of the test structure of its voltage breakdown provided for the utility model embodiment two, as shown in Figure 4, described test sample is grid oxygen electric capacity, electrical fuse element 43 and electric current one-way conduction element 44 that described test structure comprises grid oxygen electric capacity 40, connects with described grid oxygen electric capacity 40, and being positioned at the test end points 41 and 42 at two ends, described fuse original paper 43 is arranged in parallel with electric current one-way conduction unit 44.In measuring process, the insulation course when between electric capacity is breakdown, and the big current produced instantaneously causes described fuse unit 43 to blow, and test circuit disconnects, thus prevents the probe in probe from being damaged by big current; And because electric current one-way conduction element 44 is in parallel with fuse unit 43, still can conducting by passing into the different circuit for testing voltage of polarity after fuse unit 43 is blown.Thus can the electrical parameters such as voltage breakdown be measured.
Electric capacity in the present embodiment is ILD (Inter Layer Dielectric), IMD (Inter MetalDielectric) or MIM (Metal Insulator Metal) electric capacity; In other embodiments, described electric capacity also can be other electric capacity well known by persons skilled in the art.
Structure and the embodiment one of described fuse unit 43 and described electric current one-way conduction element 44 are similar, described electric current one-way conduction element 44 is diode, comprising: Semiconductor substrate, the first dopant well in described Semiconductor substrate and the second dopant well, the shallow trench isolation laid respectively in the first doped region in described first dopant well and the second dopant well and the second doped region and the Semiconductor substrate between described first dopant well and the second dopant well.The doping content of described first doped region 23 is greater than the doping content of described first dopant well 21, the doping content of described second doped region 24 is greater than the doping content of described second dopant well 22, described first doped region 23 with the second doped region 24 for being connected with described field effect transistor.Described Semiconductor substrate is P type substrate, and described first dopant well is identical with the doping type of described first doped region, and described second dopant well is identical with the doping type of described second doped region; Described first dopant well is N-type trap, and described first doped region is N-type doped region, and described second dopant well is P type trap, and described second doped region is P type doped region.
Described fuse distance 43 comprises fuse body, and in a tubular form, its material is metal or polysilicon to described fuse body, and when the electric current passed through is excessive, described this cognition of fuse fusing open circuit, prevents the card pin of the probe to test from causing damage.Also be provided with fuse Connection Element at the two ends of described fuse body, be connected with electric current one-way conduction element and grid oxygen electric capacity for electrical fuse element.
In sum, the test structure of voltage breakdown provided by the utility model, be in series with electrical fuse element and electric current one-way conduction element on the test specimen, described electrical fuse element and electric current one-way conduction element in parallel are arranged, when adopting Voltage ramp test to measure voltage breakdown, when the insulation course on test sample is breakdown, the big current meeting blowout element of instantaneous generation, prevent the probe of the probe of testing from being burnt out by transient high-current, thus save the expense of measurement; And due to the existence of electric current one-way conduction element, after fuse unit is blown, circuit still can conducting thus measure the electrical parameters such as voltage breakdown.
Foregoing description is only the description to the utility model preferred embodiment; any restriction not to the utility model scope; any change that the those of ordinary skill in the utility model field does according to above-mentioned disclosure, modification, all belong to the protection domain of claims.
Claims (10)
1. the test structure of a voltage breakdown, it is characterized in that, comprise the test sample needing to test voltage breakdown, the electrical fuse element of connecting with described test sample and electric current one-way conduction element, described electrical fuse element and electric current one-way conduction element in parallel are arranged.
2. the test structure of voltage breakdown as claimed in claim 1, it is characterized in that, described electric current one-way conduction element is diode.
3. the test structure of voltage breakdown as claimed in claim 2, it is characterized in that, described diode comprises: Semiconductor substrate, the first dopant well in described Semiconductor substrate and the second dopant well, the shallow trench isolation laid respectively in the first doped region in described first dopant well and the second dopant well and the second doped region and the Semiconductor substrate between described first dopant well and the second dopant well.
4. the test structure of voltage breakdown as claimed in claim 3, it is characterized in that, described Semiconductor substrate is P type substrate.
5. the test structure of voltage breakdown as claimed in claim 4, it is characterized in that, described first dopant well is identical with the doping type of described first doped region, and described second dopant well is identical with the doping type of described second doped region.
6. the test structure of voltage breakdown as claimed in claim 5, it is characterized in that, described first dopant well is N-type trap, and described first doped region is N-type doped region, and the doping content of described first doped region is greater than the doping content of described first dopant well.
7. the test structure of voltage breakdown as claimed in claim 5, it is characterized in that, described second dopant well is P type trap, and described second doped region is P type doped region, and the doping content of described second doped region is greater than the doping content of described second dopant well.
8. the test structure of voltage breakdown as claimed in claim 1, it is characterized in that, described electrical fuse element comprises fuse body, and in a tubular form, material is metal or polysilicon to described fuse body.
9. the test structure of voltage breakdown as claimed in claim 8, is characterized in that, be also provided with fuse Connection Element at the two ends of described fuse body, electrical fuse element is connected with electric current one-way conduction element.
10. the test structure of voltage breakdown as claimed in claim 1, it is characterized in that, described test sample is field effect transistor or grid oxygen electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420611821.4U CN204241624U (en) | 2014-10-21 | 2014-10-21 | The test structure of voltage breakdown |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420611821.4U CN204241624U (en) | 2014-10-21 | 2014-10-21 | The test structure of voltage breakdown |
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| CN204241624U true CN204241624U (en) | 2015-04-01 |
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| CN201420611821.4U Expired - Fee Related CN204241624U (en) | 2014-10-21 | 2014-10-21 | The test structure of voltage breakdown |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106898562A (en) * | 2015-12-18 | 2017-06-27 | 中芯国际集成电路制造(上海)有限公司 | The method of the breakdown voltage of semiconductor structure and test grid oxic horizon |
| WO2020093238A1 (en) * | 2018-11-06 | 2020-05-14 | Yangtze Memory Technologies Co., Ltd. | Time Dependent Dielectric Breakdown Test Structure and Test Method Thereof |
| CN113514738A (en) * | 2021-05-24 | 2021-10-19 | 长江存储科技有限责任公司 | Device, system and method for testing breakdown of semiconductor structure |
-
2014
- 2014-10-21 CN CN201420611821.4U patent/CN204241624U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106898562A (en) * | 2015-12-18 | 2017-06-27 | 中芯国际集成电路制造(上海)有限公司 | The method of the breakdown voltage of semiconductor structure and test grid oxic horizon |
| WO2020093238A1 (en) * | 2018-11-06 | 2020-05-14 | Yangtze Memory Technologies Co., Ltd. | Time Dependent Dielectric Breakdown Test Structure and Test Method Thereof |
| US11187740B2 (en) | 2018-11-06 | 2021-11-30 | Yangtze Memory Technologies Co., Ltd. | Time dependent dielectric breakdown test structure and test method thereof |
| CN113514738A (en) * | 2021-05-24 | 2021-10-19 | 长江存储科技有限责任公司 | Device, system and method for testing breakdown of semiconductor structure |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150401 Termination date: 20191021 |
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| CF01 | Termination of patent right due to non-payment of annual fee |