CN206422042U - Discharge the PID test structures of weld pad plasma - Google Patents
Discharge the PID test structures of weld pad plasma Download PDFInfo
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- CN206422042U CN206422042U CN201621184400.3U CN201621184400U CN206422042U CN 206422042 U CN206422042 U CN 206422042U CN 201621184400 U CN201621184400 U CN 201621184400U CN 206422042 U CN206422042 U CN 206422042U
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- metal wire
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- pad
- detection welding
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Abstract
The utility model provides a kind of PID test structures for discharging weld pad plasma, including positioned at same layer and multiple transistor devices arranged in parallel, the substrate of transistor device is electrically connected to the first detection welding pad, the source electrode of transistor device is electrically connected to the second detection welding pad, the drain electrode of transistor device is electrically connected to the 3rd detection welding pad, and the grid of transistor device is corresponded with the metal wire of different layers and electrically connected；Each layer of metal wire is branched off into the first sub- metal wire and the second sub- metal wire, and first sub- metal wire be electrically connected with the second sub- metal wire by top layer metallic layer, wherein first sub- metal wire is electrically connected to the antenna end of respective layer, and the second sub- metal wire is electrically connected to the 4th detection welding pad；One end electrical connection and its second sub- metal wire with layer positioned at the first sub- metal wire of the bottom, the other end electrically connect a protection diode.The utility model can discharge the plasma on bulk detection welding pad, reduce its influence to PID test structures.
Description
Technical field
The utility model is related to semiconductor test technical field, more particularly to a kind of PID for discharging weld pad plasma
Test structure.
Background technology
In deep submicron integrated circuit processing technology, high-density plasma reinforced chemical gas phase generally need to be largely used
Deposit (HDPECVD, High Density Plasma Enhanced Deposition) and plasma etching (plasma
Etching) technology.Such a technology is adapted to as size constantly reduces, the requirement that mask etching resolution ratio is improved constantly.But
In high-density plasma reinforced chemical vapour deposition or plasma etch process, free charge can be produced, when etching conductor
When (metal or polysilicon), exposed conductive surface will collect free charge.If the conductor that have accumulated electric charge is direct
It is connected on the grid of device, will be in the formation grid leakage current of the thin oxide layer under polysilicon gate (gate leakge), influence
The firing current Vt of semiconductor devices, when the electric charge of accumulation exceedes certain amount, this grid leakage current can damage gate medium
Layer, makes circuit malfunction, so that the reduction of the reliability and life-span of the even whole chip of device seriously.Generally such case is claimed
For plasma-induced damage (PID, Plasma Induced Damage), also known as antenna effect (PAE, Process
Antenna Effect)。
Generally, the probability that antenna effect occurs for chip is weighed by " antenna ratio " (antenna ratio).
The definition of " antenna ratio " is：The area of the conductor (being usually metal) of composition so-called " antenna " and the gate medium aspect being connected
Long-pending ratio.With the development of semiconductor integrated circuit fabricating technology, the size of gate dielectric layer is less and less, the layer of metal
Number is more and more, thus it is bigger to occur the possibility of antenna effect.
However, being found in actual production, existing plasma damage detection structure has the disadvantages that：The survey of metal
Test weld pad (PAD) can also collect the electric charge in environment as antenna, the detection welding pad face being particularly connected with top wire
Product is larger, and thickness is thicker, because antenna is electrically connected with metal wire, therefore, the electric charge meeting that the detection welding pad of top layer is collected into
Antenna is transferred to through metal wire, this will lead to not the accurate size for detecting the electric charge collected by antenna structure, namely can not be accurate
Really detect the power of antenna effect.
So, design is a kind of can be discharged top layer detection welding pad plasma to reduce the structure that its tests PID influence
It is industry urgent problem.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of release weld pad plasma
The PID test structures of body, for solving to be difficult to eliminate asking for top layer detection welding pad plasma influence PID tests in the prior art
Topic.
To achieve the above object, the utility model provides a kind of PID test structures for discharging weld pad plasma, the survey
Examination structure at least includes：Positioned at same layer and multiple transistor devices arranged in parallel, the substrate of the transistor device is electrically connected
The first detection welding pad is connected to, the source electrode of the transistor device is electrically connected to the second detection welding pad, the leakage of the transistor device
Pole is electrically connected to the 3rd detection welding pad, and the grid of the transistor device is corresponded with the metal wire of different layers and electrically connected；Often
One layer of metal wire is branched off into the first sub- metal wire and the second sub- metal wire, and the first sub- metal wire and second interest
Category line is electrically connected by top layer metallic layer, wherein the first sub- metal wire is electrically connected to the antenna end of respective layer, the second son
Metal wire is electrically connected to the 4th detection welding pad；One end electrical connection and its same layer positioned at the described first sub- metal wire of the bottom
The described second sub- metal wire, the other end electrically connect a protection diode.
In an embodiment of the present utility model, the structure of the transistor device at least includes substrate, is formed at lining
The source electrode of bottom both sides and drain electrode, it is formed between source electrode and drain electrode the gate dielectric layer of substrate surface and is formed at the grid and be situated between
The polysilicon gate of matter layer surface.
In an embodiment of the present utility model, each layer of the described second sub- metal wire and the first sub- metal wire
Length than scope be 1000~2000.
In an embodiment of the present utility model, first detection welding pad, second detection welding pad, the described 3rd
Detection welding pad and the 4th detection welding pad are aluminium welding pad or copper pad.
In an embodiment of the present utility model, the thickness of the 4th detection welding pad is more than the described first test weldering
The thickness of pad, second detection welding pad and the 3rd detection welding pad.
In an embodiment of the present utility model, the substrate is electrically connected to the first test by the first metal plug and welded
Pad.
In an embodiment of the present utility model, the source electrode is electrically connected to the second test by the second metal plug and welded
Pad.
In an embodiment of the present utility model, the drain electrode is electrically connected to the 3rd test by the 3rd metal plug and welded
Pad.
In an embodiment of the present utility model, the grid passes through the 4th metal plug and the metal wire one of different layers
One correspondence is electrically connected.
In an embodiment of the present utility model, the second sub- metal wire passes through fifth metal connector and the top layer
Metal level is electrically connected.
As described above, the PID test structures of release weld pad plasma of the present utility model, have the advantages that：
1st, the plasma on release (export) bulk detection welding pad, reduces its influence to PID test results；
2nd, only top layer metallic layer connects antenna and protection diode, so as to ensure other layers of metal wire and metal plug
Plasma damage effect；
3rd, protection diode is electrically connected on the metal wire positioned at the bottom, simple in construction, convenient test.
Brief description of the drawings
Fig. 1 is the schematic top plan view for the PID test structures that the utility model discharges weld pad plasma.
Fig. 2 is structure sectional view of the single transistor device along AA ' directions in Fig. 1.
Fig. 3 is the structure sectional view in Fig. 1 along BB ' directions.
Fig. 4 is the structure sectional view in Fig. 1 along CC ' directions.
Fig. 5 is the flow graph of plasma when the utility model does not set protection diode.
Fig. 6 is the flow graph of plasma when the utility model does not set top layer metallic layer.
Fig. 7 is the flow graph of the 4th detection welding pad plasma of the present utility model.
Component label instructions
100 test structures
1 transistor device
101 substrates
102 source electrodes
103 drain electrodes
104 grids
105 gate dielectric layers
2 first detection welding pads
3 second detection welding pads
4 the 3rd detection welding pads
5 the 4th detection welding pads
6 metal wires
601st, 603,605,607 first sub- metal wire
602nd, 604,606,608 second sub- metal wire
7 first metal plugs
8 second metal plugs
9 the 3rd metal plugs
10 the 4th metal plugs
11 fifth metal connectors
12 top layer metallic layers
13 antenna ends
14 protection diodes
Embodiment
Embodiment of the present utility model is illustrated by particular specific embodiment below, those skilled in the art can be by this
Content disclosed by specification understands other advantages of the present utility model and effect easily.
Fig. 1 is referred to Fig. 7.It should be clear that structure, ratio, size depicted in this specification institute accompanying drawings etc., is only used to
Coordinate the content disclosed in specification, so that those skilled in the art is understood with reading, be not limited to the utility model
Enforceable qualifications, therefore do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or size
Adjustment, in the case where not influenceing the utility model effect that can be generated and the purpose that can reach, all should still fall in the utility model
Disclosed technology contents are obtained in the range of covering.Meanwhile, in this specification it is cited as " on ", " under ", " left side ",
The term on " right side ", " centre " and " one " etc., is merely convenient to understanding for narration, and it is enforceable to be not used to restriction the utility model
Scope, being altered or modified for its relativeness is enforceable when being also considered as the utility model under without essence change technology contents
Category.
Fig. 1-Fig. 4 is referred to, the utility model provides a kind of PID test structures for discharging weld pad plasma, the survey
Examination structure 100 at least includes：Positioned at same layer and multiple transistor devices 1 arranged in parallel, the substrate of the transistor device 1
101 are electrically connected to the first detection welding pad 2, and the source electrode 102 of the transistor device 1 is electrically connected to the second detection welding pad 3, the crystalline substance
The drain electrode 103 of body tube device 1 is electrically connected to the 3rd detection welding pad 4, the grid 104 of the transistor device 1 and the gold of different layers
Belong to line 6 and correspond electrical connection；Each layer of metal wire 6 is branched off into the first sub- of metal wire 601,603,605,607 and second
Metal wire 602,604,606,608, and the first sub- metal wire 601,603,605,607 and the described second sub- metal wire 602,
604th, 606,608 it is electrically connected by top layer metallic layer 12, wherein the first sub- metal wire 601,603,605,607 is electrically connected
To the antenna end 13 of respective layer, the second sub- metal wire 602,604,606,608 is electrically connected to the 4th detection welding pad 5；Positioned at most
One end electrical connection of described first sub- metal wire 601 of bottom is with it with the described second sub- metal wire 602 of layer, and the other end is electrically connected
Connect a protection diode 14.Here the protection diode 14 is mainly used in discharging anion.
It should be noted that Fig. 1 is top view, therefore the antenna end 13 of each layer looks like and stacked, actual heaven
Line end 13 is between the end of the first sub- metal wire 601,603,605,607 on respective layer, antenna end 13 and is not connected with each other.
And although the second sub- metal wire 602,604,606,608 falls within different layers, its end is uniformly connected to the 4th detection welding pad
5, each grid 104 and external voltage are connected by the 4th detection welding pad 5.
As an example, the structure of the transistor device 1 at least includes substrate 101, is formed at the source electrode of the both sides of substrate 101
102 and drain electrode 103, be formed at source electrode 102 and drain electrode 103 between the surface of substrate 101 gate dielectric layer 105 and be formed at institute
State the polysilicon gate 104 on the surface of gate dielectric layer 105.Specifically refer to Fig. 2, be in Fig. 1 single transistor device 1 along AA ' sides
To structure sectional view.
Wherein, the substrate 101 is connected in test by the first detection welding pad 2 and external voltage, all source electrodes 102
Connected by the second detection welding pad 3 and external voltage, all drain electrodes 103 are connected by the 3rd detection welding pad 4 and external voltage.
The stacked structure of the top layer metallic layer 12 and the metal wire 6 of each layer it can be seen from Fig. 3 and Fig. 4.
As an example, each layer of the described second sub- metal wire 602,604,606,608 and the first sub- metal wire
601st, 603,605,607 length than scope be 1000~2000.Each layer of the described second sub- metal wire 602,604,
606th, 608 length can metal wire 601,603,605,607 more sub- than first length it is long a lot.
As an example, first detection welding pad 2, second detection welding pad 3, the 3rd detection welding pad 4 and institute
It is aluminium welding pad or copper pad to state the 4th detection welding pad 5.
As an example, the thickness of the 4th detection welding pad 5 is more than first detection welding pad 2, the second test weldering
The thickness of pad 3 and the 3rd detection welding pad 4.In general, the detection welding pad area that top wire 6 is connected is larger, thickness
Thicker, the quantity of electric charge that it is collected is also most, therefore the influence to antenna end 13 is also maximum.
As an example, the substrate 101 is electrically connected to the first detection welding pad 2 by the first metal plug 7；The source electrode 102
It is electrically connected by the second metal plug 8 to the second detection welding pad 3；The drain electrode 103 is electrically connected to the 3rd survey by the 3rd metal plug 9
Test weld pad 4；The grid 104 is corresponded by the metal wire 6 of the 4th metal plug 10 and different layers and is electrically connected, in order that crystal
The metal wire 6 of polysilicon gate 104 and different layers is electrically connected, it is necessary to be entered by the 4th metal plug 10 of different height in pipe array
Row connection.It should know, the 4th metal plug 10 is that the metal plug accumulation on each layer metal level is formed, and is connected to different gold
The number of plies for the metal plug that category line 6 then needs is also different；The second sub- metal wire 602,604,606,608 passes through fifth metal
Connector 11 is electrically connected with the top layer metallic layer 12.
The method being monitored using test structure of the present utility model includes amperometric, can also be other surveys
Monitoring method is measured, for example threshold voltage mensuration, FA focuses crawl failpoint method etc..But these methods are prior art,
Those skilled in the art can know, nor protection content of the present utility model, therefore will not be repeated here.
In order to more preferably explain scheme of the present utility model, it is necessary to be embodied from the solution of following two problems.
First, if shown in Fig. 5, the flow direction of plasma during to assume that the utility model does not set protection diode 14
Figure.If being not provided with protection diode 14, it cannot also play a part of discharging the electricity collected in plasma, antenna end 13
The electric charge (interference) collected on lotus (required) and the 4th detection welding pad 5 can all be transferred to grid 104 by electric field action,
Damage is caused to gate dielectric layer 105, and can not accurately detect the size of the electric charge collected by antenna end 13.
Second, as shown in fig. 6, the flow graph of plasma when not setting top layer metallic layer 12 for hypothesis the utility model.
If each layer of the metal wire is not branched off into the described first sub- metal wire 601,603,605,607 and second son
Metal wire 602,604,606,608, be also not present certainly electrically connect the first sub- metal wire 601,603,605,607 with it is described
The top layer metallic layer 12 of second sub- metal wire 602,604,606,608, now, if provided, with the protection diode 14,
The electric charge collected on the electric charge and the 4th detection welding pad 5 that then the antenna end 13 is collected all can be by the protection diode
14 releases, then, the PID test structures are just failed.
To sum up analyze, on the Validity Test for how ensureing PID test structures and the 4th detection welding pad 5 for avoiding top layer etc.
The interference of gas ions is the technical problems to be solved in the utility model.
Each layer of metal wire is branched off into the first sub- metal wire 601,603,605,607 and the second interest by the utility model
Belong to line 602,604,606,608, and the first sub- metal wire 601,603,605,607 and the described second sub- metal wire 602,
604th, 606,608 it is electrically connected by top layer metallic layer 12, wherein the first sub- metal wire 601,603,605,607 is electrically connected
To the antenna end 13 of respective layer, the second sub- metal wire 602,604,606,608 is electrically connected to the 4th detection welding pad 5；Positioned at most
One end electrical connection of described first sub- metal wire 601 of bottom is with it with the described second sub- metal wire 602 of layer, and the other end is electrically connected
Connect a protection diode 14.Efficiently solve above mentioned problem.As shown in fig. 7, in the 4th detection welding pad 5 of the present utility model
The flow graph of plasma.The 4th detection welding pad plasma flows to the protection diode 14, does not interfere with crystalline substance
The grid 104 of body tube device 1.
It is found through experiments that, the cut-in voltage that the PID test structures of the present utility model for discharging weld pad plasma are measured
Offset it is better than the test result of prior art PID test structures, control in allowed limits.
In summary, the PID test structures of release weld pad plasma of the present utility model, by discharging bulk test weldering
Plasma on pad, reduces its influence to PID test results；Only top layer metallic layer connects antenna and protection diode,
So as to ensure other layers of metal wire and the plasma damage effect of metal plug；Electrically connected on the metal wire positioned at the bottom
Protection diode, simple in construction, convenient test.
Above-described embodiment only illustrative principle of the present utility model and its effect are new not for this practicality is limited
Type.Any person skilled in the art can all be carried out without prejudice under spirit and scope of the present utility model to above-described embodiment
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the essence disclosed in the utility model
God and all equivalent modifications completed under technological thought or change, should be covered by claim of the present utility model.
Claims (10)
1. a kind of PID test structures for discharging weld pad plasma, it is characterised in that the test structure at least includes：
Positioned at same layer and multiple transistor devices arranged in parallel, the substrate electrical connection of the transistor device to the first test
Weld pad, the source electrode of the transistor device is electrically connected to the second detection welding pad, and the drain electrode of the transistor device is electrically connected to
Three detection welding pads, the grid of the transistor device is corresponded with the metal wire of different layers and electrically connected；
Each layer of metal wire is branched off into the first sub- metal wire and the second sub- metal wire, and the first sub- metal wire and described the
Two sub- metal wires are electrically connected by top layer metallic layer, wherein the first sub- metal wire is electrically connected to the antenna end of respective layer,
Second sub- metal wire is electrically connected to the 4th detection welding pad；
One end positioned at the described first sub- metal wire of the bottom is electrically connected with it with the described second sub- metal wire of layer, the other end
Electrically connect a protection diode.
2. the PID test structures of release weld pad plasma according to claim 1, it is characterised in that the transistor
The structure of device at least include substrate, be formed at the source electrode of substrate both sides and drain electrode, be formed at source electrode drain electrode between substrate table
The gate dielectric layer in face and the polysilicon gate for being formed at the gate dielectric layer surface.
3. the PID test structures of release weld pad plasma according to claim 1, it is characterised in that each layer of institute
The scope for stating the length ratio of the second sub- metal wire and the first sub- metal wire is 1000~2000.
4. the PID test structures of release weld pad plasma according to claim 1, it is characterised in that described first surveys
Test weld pad, second detection welding pad, the 3rd detection welding pad and the 4th detection welding pad are aluminium welding pad or brazing
Pad.
5. the PID test structures of release weld pad plasma according to claim 1, it is characterised in that the described 4th surveys
The thickness of test weld pad is more than the thickness of first detection welding pad, second detection welding pad and the 3rd detection welding pad.
6. the PID test structures of release weld pad plasma according to claim 1, it is characterised in that the substrate leads to
The first metal plug is crossed to be electrically connected to the first detection welding pad.
7. the PID test structures of release weld pad plasma according to claim 1, it is characterised in that the source electrode leads to
The second metal plug is crossed to be electrically connected to the second detection welding pad.
8. the PID test structures of release weld pad plasma according to claim 1, it is characterised in that the drain electrode is led to
The 3rd metal plug is crossed to be electrically connected to the 3rd detection welding pad.
9. the PID test structures of release weld pad plasma according to claim 1, it is characterised in that the grid leads to
The metal wire one-to-one corresponding for crossing the 4th metal plug and different layers is electrically connected.
10. the PID test structures of release weld pad plasma according to claim 1, it is characterised in that second son
Metal wire is electrically connected by fifth metal connector with the top layer metallic layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621184400.3U CN206422042U (en) | 2016-11-03 | 2016-11-03 | Discharge the PID test structures of weld pad plasma |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621184400.3U CN206422042U (en) | 2016-11-03 | 2016-11-03 | Discharge the PID test structures of weld pad plasma |
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| Publication Number | Publication Date |
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| CN206422042U true CN206422042U (en) | 2017-08-18 |
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ID=59577674
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| CN201621184400.3U Active CN206422042U (en) | 2016-11-03 | 2016-11-03 | Discharge the PID test structures of weld pad plasma |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108831841A (en) * | 2018-06-14 | 2018-11-16 | 上海华力集成电路制造有限公司 | The wafer of aluminum steel resistance permits Acceptance Tests figure |
| CN112581892A (en) * | 2019-09-29 | 2021-03-30 | 昆山国显光电有限公司 | Display panel and display device |
| CN113437047A (en) * | 2021-06-21 | 2021-09-24 | 长江存储科技有限责任公司 | Test structure of semiconductor device, manufacturing method thereof and memory |
| CN113451276A (en) * | 2021-06-28 | 2021-09-28 | 长江存储科技有限责任公司 | Test structure, test system and test method |
-
2016
- 2016-11-03 CN CN201621184400.3U patent/CN206422042U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108831841A (en) * | 2018-06-14 | 2018-11-16 | 上海华力集成电路制造有限公司 | The wafer of aluminum steel resistance permits Acceptance Tests figure |
| CN112581892A (en) * | 2019-09-29 | 2021-03-30 | 昆山国显光电有限公司 | Display panel and display device |
| CN112581892B (en) * | 2019-09-29 | 2022-03-22 | 昆山国显光电有限公司 | Display panel and display device |
| CN113437047A (en) * | 2021-06-21 | 2021-09-24 | 长江存储科技有限责任公司 | Test structure of semiconductor device, manufacturing method thereof and memory |
| CN113451276A (en) * | 2021-06-28 | 2021-09-28 | 长江存储科技有限责任公司 | Test structure, test system and test method |
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