CN103346143A - Test structure for metal layer electromigration - Google Patents
Test structure for metal layer electromigration Download PDFInfo
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- CN103346143A CN103346143A CN2013102777509A CN201310277750A CN103346143A CN 103346143 A CN103346143 A CN 103346143A CN 2013102777509 A CN2013102777509 A CN 2013102777509A CN 201310277750 A CN201310277750 A CN 201310277750A CN 103346143 A CN103346143 A CN 103346143A
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- H01—ELECTRIC ELEMENTS
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Abstract
The invention provides a test structure for metal layer electromigration. The test structure comprises two test through holes and one or two test lead units. Each test lead unit is formed by a connection line located in a connection metal layer, an additional through hole located in a through hole layer and an additional metal wire located in a tested metal layer. If the test lead unit is one in number, one end of the test metal wire is connected with an externally arranged test instrument through one test through hole and the test lead unit, and the other end of the test metal wire is connected with the externally arranged test instrument only through one test through hole and one connection line; if the test lead units are two in number, two ends are respectively connected with the externally arranged test instrument through the test through holes and test lead units. Through the structure, the lengths of the connection lines are short enough so that no electromigration can be generated in the test structure, therefore testing precision of an electromigration tester is guaranteed, and the quality of wafers is monitored more accurately.
Description
Technical field
The present invention relates to the semiconductor device reliability test structure, be specifically related to the electromigratory test structure of a kind of metal level, belong to technical field of semiconductors.
Background technology
When direct current passes through conductor, the substance transfer of progressively moving and causing owing to atom in the conductor, this mass transportation phenomenon that produces in metal is called as electromigration (Electromigration, be called for short EM), its inherent mechanism is the momentum transfer between the metallic atom of conduction electrons and diffusion.ELECTROMIGRATION PHENOMENON just takes place in common reguline metal near the high temperature of material melting point the time.Because the sectional area of metallic material film is very little, its current density is relatively large, just ELECTROMIGRATION PHENOMENON can take place at a lower temperature.
When electromigration took place, the part momentum of a moving electron was transferred to contiguous activated atom, and this can cause this atom to leave its home position.As time passes, this strength can cause that the atom of huge quantity is away from their home position.Especially for the occasion that has high direct current density (High Direct Current Densities), for example in the microelectronic, electromigration effect is very crucial.
Along with the raising of chip integration, it is thinner, narrower, thinner that the metal level of integrated circuit becomes, and therefore, current density wherein is also increasing, and the aggravation electromigration causes the electromigration invalidation situation.Electromigration invalidation comprises: because electromigration causes fracture (Break) occurring owing to mass depletion in the conductor (especially narrow lead) or breach (Gap) stops electric current to take place, this fracture or breach are called as cavity (Void) or internal failure (Internal Failure), i.e. open circuit.Electromigration also can cause one in the conductor metal ion transport and produce at regional area that quality is piled up (Pile Up) and form unexpected electrical connection to proximity conductor drift (Drift), this defective is called as hillock inefficacy (Hillock Failure) or whisker lost efficacy (Whisker Failure), i.e. short circuit.Above-mentioned two class defectives all can cause fault.
Along with the accuracy of manufacture to microelectronic integrated circuit requires to improve constantly, metal level is thinner, and current density increases thereupon, and more therefore the inefficacy of Yi Fashengyin electromigration generation becomes particularly important for electromigratory observing and controlling.
See also Fig. 1, Figure 1 shows that the view in transverse section schematic diagram of traditional electro-migration testing structure common in the prior art.Wherein, two end points of the metal interconnecting wires in the test metal wire 11 link to each other with an end of test through hole 12 respectively, the other end of two test through holes 12 respectively with is connected metal level in two connecting lines 13 continuous, article two, the other end of connecting line links to each other with a pair of test metal gasket 14 respectively, connects external tester at last.
Yet, in some technology, test metal wire 11 situation different with the thickness of connecting line 13 often occur, even the thickness of two metal wires (H) difference can reach 3 times even bigger sometimes.Those skilled in the art will know that, in the metal electro-migration test, if test metal wire 11 is too big with the difference in thickness of connecting line 13, the stress condition (current density) that usually causes connecting line 13 parts to be subjected to is bigger than test metal wire 11, thereby causes invalid position to change.That is to say that in actual use, when test metal wire 11 was applied current stress (I), the current density that connecting line 13 bears (J, J=I/s, s are the cross-sectional area of metal) was bigger than the current density of test metal wire 11.By increasing the width of connecting line 13, avoid the generation of this kind situation at present, but because added electric current all is transmitted on the connecting line 13 by test through hole 12, therefore, the connecting line 13 that test through hole 12 connects is very easy to occur failpoint 25.As shown in Figure 2, and this moment, the position of electromigration invalidation should be at failpoint 24.This just runs counter to the test purpose that this test structure is measured the electric migration performance of tested metal level, thereby the metal level case of iontophoresis that can not correctly reflect semiconductor chip internal components structure, cause test result unusual, can't play the effect of effective monitoring to the quality of test metal wire 11.Therefore be necessary to improve structural design, improve precision of test result.
Summary of the invention
For overcoming the problems referred to above, the object of the invention is to provide a kind of metal level electromigratory test structure, it is by having added the test lead unit, shortened the length of connecting line to reach the purpose that does not have electromigration in test structure, to produce, thereby make the accurate testing degree of electro-migration testing instrument get a promotion, monitor wafer quality more accurately.
For reaching above-mentioned purpose, technical scheme of the present invention is as follows:
The electromigratory test structure of a kind of metal level comprises: two test through hole and two test lead unit that are positioned at via layer.Two test through holes that are positioned at via layer, one end link to each other with an end of metal wire in the tested metal level respectively; These two test lead unit are made up of the additional metal line that is arranged in the connecting line that connects metal level, is arranged in the extra through hole of via layer and is positioned at tested metal level; Connecting line and one or more parallel extra through holes that are connected and the additional metal line composition that is serially connected successively; Wherein, two test through hole another port link to each other with external tester by the test lead unit respectively.
Preferably, the length of the connecting line in two test lead unit in the above-mentioned test structure is smaller or equal to 10 μ m.
Preferably, the additional metal line in the above-mentioned test structure is same material with the test metal wire, and additional metal line live width or sectional area are more than or equal to the test metal wire.
Preferably, the sectional area of the extra through hole of the one or more parallel connections in the above-mentioned test structure is more than or equal to described test metal wire.
For reaching above-mentioned purpose, another technical scheme of the present invention is as follows:
The electromigratory test structure of a kind of metal level comprises two test through hole and test lead unit that are positioned at via layer; Two test through holes that are positioned at via layer, one end link to each other with an end of metal wire in the tested metal level respectively; This test lead unit is made up of the additional metal line that is arranged in first connecting line that connects metal level, is arranged in the extra through hole of via layer and is positioned at tested metal level; Connecting line and one or more parallel extra through holes that are connected and the additional metal line composition that is serially connected successively; Wherein, the another port of a described test through hole links to each other with external tester by the test lead unit, and the another port of another test through hole is arranged in second connecting line that connects metal level by one and links to each other with external tester.
Preferably, the length of first connecting line in two test lead unit in the above-mentioned test structure and/or second connecting line is smaller or equal to 10 μ m.
Preferably, the additional metal line in the above-mentioned test structure is same material with the test metal wire, and additional metal line live width or sectional area are more than or equal to the test metal wire.
Preferably, the sectional area of the extra through hole of the one or more parallel connections in the above-mentioned test structure is more than or equal to described test metal wire.
From above-mentioned two technical schemes as can be seen, the electromigratory test structure of a kind of metal level provided by the invention shortens the length of connecting line to reach the purpose that does not have electromigration to produce in test structure.Compared with prior art, make the accurate testing degree of electro-migration testing instrument get a promotion, monitor wafer quality more accurately.
Description of drawings
Fig. 1 is the electromigratory test structure schematic diagram of metal level in the prior art
Fig. 2 is the electromigration schematic diagram of the electromigratory test structure of metal level shown in Figure 1
Fig. 3 is the electromigratory preferred embodiment schematic diagram of a kind of metal level of the present invention
Fig. 4 is the electromigratory preferred embodiment schematic diagram of a kind of metal level of the present invention
Embodiment
Some exemplary embodiments that embody feature of the present invention and advantage will be described in detail in the explanation of back segment.Be understood that the present invention can have various variations in different examples, its neither departing from the scope of the present invention, and explanation wherein and be shown in the usefulness that ought explain in essence, but not in order to limit the present invention.
Above-mentioned and other technical characterictic and beneficial effect will reach accompanying drawing 3 and Fig. 4 in conjunction with the embodiments the electromigratory test structure of metal level of the present invention will be elaborated.Wherein Fig. 3 is for adopting the embodiment of two groups of test lead unit, and Fig. 4 is for adopting the embodiment of one group of test lead unit.Above-mentioned two preferred embodiments all adopt install additional the test metal gasket link to each other with external tester.
See also Fig. 3, Fig. 3 is the schematic diagram of a preferred embodiment of the electromigratory test structure of metal level of the present invention.As shown in the figure, the two ends of tested metal level 31 link to each other with two test through holes 32 of this test structure respectively, the other end of two test through holes 32 links to each other with connecting line 33, the other end of connecting line 33 links to each other with a plurality of parallel extra through holes that are connected 36, extra through hole 36 other ends link to each other with the additional metal line 37 of tested metal level, the other end of additional metal line 37 links to each other with test metal gasket 38, and last test metal gasket 38 connects external tester.
Generally, test metal wire 31 is identical with test through hole 32 materials; Additional metal line 37 is identical with extra through hole 36 materials; Test metal wire 31 in the tested metal level is identical with additional metal line 37 materials, and cross section is identical.The consistency of material, cross section and the position of arranging has reduced electromigration to greatest extent and has occurred in possibility in the test structure, thereby guarantees to measure reliability and the accuracy of gained data.
Wherein, the length of any one connecting line 33 is less than 10 μ m, because in theory, shorten the length of metal wire and can avoid electromigration invalidation, the critical length of this electromigration invalidation is 10 μ m, not enough owing to connecting line 33 length though current density does not reduce, so do not have electromigration invalidation.For guaranteeing two length all less than 10 μ m, thus be best during two connecting line equal in length, and be easy to make.Extra through hole 36 is a plurality of through holes, and its purpose is shunting, reduces current density by the method that increases cross-sectional area, makes it the sectional area more than or equal to the test metal wire, thereby reduces electromigratory generation.
See also Fig. 4, Fig. 4 is the schematic diagram of another preferred embodiment of the electromigratory test structure of metal level of the present invention.As shown in the figure, the two ends of tested metal level 41 link to each other with two test through holes 42 of this test structure respectively; The other end of a test through hole 42 links to each other with first connecting line 43, the other end of first connecting line 43 links to each other with a plurality of parallel extra through holes that are connected 46, extra through hole 46 other ends link to each other with the additional metal line 47 of tested metal level, the other end of additional metal line 37 links to each other with test metal gasket 48, and last test metal gasket 48 connects external tester; The other end of another test through hole 42 links to each other with second connecting line 43, and second connecting line 49 directly links to each other with another test metal gasket 48, connects external tester at last.
Generally, test metal wire 41 is identical with test through hole 42 materials; Additional metal line 47 is identical with extra through hole 46 materials; Test metal wire 41 in the tested metal level is identical with additional metal line 47 materials, and cross section is identical.The consistency of material, cross section and the position of arranging has reduced electromigration to greatest extent and has occurred in possibility in the test structure, thereby guarantees to measure reliability and the accuracy of gained data.
Wherein, the length of first connecting line 43 or second connecting line 49 is all less than 10 μ m, because in theory, shorten the length of metal wire and can avoid electromigration invalidation, the critical length of this electromigration invalidation is 10 μ m, though current density does not reduce still because first connecting line 43 or second connecting line, 49 length are not enough, so do not have electromigration invalidation.Extra through hole 46 is a plurality of through holes, and its purpose is shunting, reduces current density by the method that increases cross-sectional area, makes it the sectional area more than or equal to the test metal wire, thereby reduces electromigratory generation.
Above-described only is embodiments of the invention; described embodiment is not in order to limit scope of patent protection of the present invention; therefore the equivalent structure done of every utilization specification of the present invention and accompanying drawing content changes, and in like manner all should be included in protection scope of the present invention.
Claims (8)
1. metal level electro-migration testing structure, the electric migration performance for detection of test metal wire two ends in the tested metal level is characterized in that, comprising:
Two test through holes that are positioned at via layer, described two test through hole one ends link to each other with an end of metal wire in the described tested metal level respectively;
Two test lead unit, it comprises and is arranged in the connecting line that connects metal level, the additional metal line that is arranged in the extra through hole of via layer and is positioned at described tested metal level, described connecting line, is serially connected successively with one or more parallel extra through holes that are connected and additional metal line;
Wherein, two described test through hole another port link to each other with external tester by described test lead unit respectively.
2. test structure as claimed in claim 1 is characterized in that, lays respectively at the length of two described connecting lines in the described test lead unit smaller or equal to 10 μ m.
3. test structure as claimed in claim 1 is characterized in that, described additional metal line is same material with the test metal wire, and additional metal line live width or sectional area are more than or equal to the test metal wire.
4. test structure as claimed in claim 1 is characterized in that, the sectional area of the extra through hole of described one or more parallel connections is more than or equal to described test metal wire.
5. metal level electro-migration testing structure, the electric migration performance for detection of metal wire two ends in the tested metal level is characterized in that, comprising:
Two test through holes that are positioned at via layer, described two test through hole one ends link to each other with an end of metal wire in the described tested metal level respectively;
A test lead unit, it comprises the extra through hole that is arranged in via layer, the additional metal line that is arranged in first connecting line of connection metal level and is positioned at described tested metal level; Described connecting line, with one or more parallel extra through holes that are connected and the additional metal line composition that is serially connected successively;
Wherein, the another port of a described test through hole links to each other with external tester by the test lead unit, and the another port of described another test through hole is arranged in second connecting line that connects metal level by one and links to each other with external tester.
6. test structure as claimed in claim 5 is characterized in that, the length of described first connecting line and/or second connecting line is smaller or equal to 10 μ m.
7. test structure as claimed in claim 5 is characterized in that, described additional metal line is same material with the test metal wire, and additional metal line live width or sectional area are more than or equal to the test metal wire.
8. test structure as claimed in claim 5 is characterized in that, the sectional area of the extra through hole of described one or more parallel connections is more than or equal to described test metal wire.
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| CN201310277750.9A CN103346143B (en) | 2013-07-03 | 2013-07-03 | The electromigratory test structure of a kind of metal level |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887282A (en) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | Metal electromigration structure |
| CN107153750A (en) * | 2017-06-12 | 2017-09-12 | 北京工业大学 | Supply network electromigration reliability analysis method on a kind of piece based on physical model |
| CN108091636A (en) * | 2017-12-15 | 2018-05-29 | 上海华力微电子有限公司 | Top-level metallic line electro-migration testing structure |
| CN112255526A (en) * | 2020-09-09 | 2021-01-22 | 北京航天控制仪器研究所 | Preparation method and test method of copper-filled silicon through hole electromigration test structure |
| WO2021190053A1 (en) * | 2020-03-25 | 2021-09-30 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method therefor, display panel and display device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887282A (en) * | 2014-03-20 | 2014-06-25 | 上海华力微电子有限公司 | Metal electromigration structure |
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| CN107153750A (en) * | 2017-06-12 | 2017-09-12 | 北京工业大学 | Supply network electromigration reliability analysis method on a kind of piece based on physical model |
| CN108091636A (en) * | 2017-12-15 | 2018-05-29 | 上海华力微电子有限公司 | Top-level metallic line electro-migration testing structure |
| WO2021190053A1 (en) * | 2020-03-25 | 2021-09-30 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method therefor, display panel and display device |
| CN112255526A (en) * | 2020-09-09 | 2021-01-22 | 北京航天控制仪器研究所 | Preparation method and test method of copper-filled silicon through hole electromigration test structure |
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| CN103346143B (en) | 2015-11-25 |
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