CN205508811U - 一种高散热性能的表面贴装功率器件封装结构 - Google Patents

一种高散热性能的表面贴装功率器件封装结构 Download PDF

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CN205508811U
CN205508811U CN201620067357.6U CN201620067357U CN205508811U CN 205508811 U CN205508811 U CN 205508811U CN 201620067357 U CN201620067357 U CN 201620067357U CN 205508811 U CN205508811 U CN 205508811U
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孔凡伟
段花山
贺先忠
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Shandong crystal guided microelectronic Limited by Share Ltd
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Shandong Jing Dao Microtronics AS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/37124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/3754—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

本实用新型的高散热性能的表面贴装功率器件封装结构，包括塑封体，塑封体内设置有引脚且引脚伸出至塑封体外，所述引脚位于塑封体内部分的上表面设置有散热片。本实用新型在不改变表面贴装功率器件外形的情况下，内嵌散热片，在保证兼容大多数类似封装的情况下，提高了散热效果，使得封装的产品有更低的热阻，较同外形尺寸的其它封装形式的稳态热阻减少大约5%，瞬态热阻减少大约50%，封装的功率密度（W/mm2）装提高大约12%，提高了器件的可靠性。

Description

一种高散热性能的表面贴装功率器件封装结构
技术领域
本实用新型涉及一种高散热性能的表面贴装功率器件封装结构，属于半导体微电子技术领域，封装外形主要适合于表面贴装半导体功率器件的高功率密度封装。
背景技术
随着移动资讯产品、家用电器产品以及绿色照明等领域的发展，为其配套的电子产品大量使用到了大功率二极管、整流桥、稳压管等重要元器件，并对这类器件产品的“轻、薄、小、密”提出了更高的要求；高功率密度的小型塑封结构，不仅代表了行业技术水平，对后级产品的小型化、更高的功率密度，高可靠性、高安全性等要求至关重要；目前半导体元器件中使用量最大的整流二极管产品，也朝着高功率密度方向发展，占用PCB板面积小、可靠性高等特点，在一些高端产品中得到广泛的应用。
表面贴装功率封装的元器件在走向小型化的基础上，由于受到结构限制，散热问题却越来越突出，其功率密度很难达到设计要求，常温条件自然散热环境下其耗散功率最大只有1-2W左右，瞬时功率也大受影响，因此需要一种自带散热片的表面贴装二极管封装结构，来解决小型化与功率的矛盾，而且不能影响外形尺寸。
实用新型内容
本实用新型为了克服以上技术的不足，提供了一种高散热性能的表面贴装功率器件封装结构，该封装结构能有效提高二极管等表面贴装功率器件的散热效果和功率密度。
本实用新型克服其技术问题所采用的技术方案是：
一种高散热性能的表面贴装功率器件封装结构，包括塑封体，塑封体内设置有引脚且引脚伸出至塑封体外，所述引脚位于塑封体内部分的上表面设置有散热片。
根据本实用新型优选的，所述引脚包括形状均为折弯回包状的左引脚和右引脚，左引脚和右引脚位于塑封体外两端的部分相对称，所述左引脚位于塑封体内的部分设置于右引脚位于塑封体内的部分的下方，散热片设置于右引脚位于塑封体内部分的上表面。
根据本实用新型优选的，所述散热片的大小不大于右引脚位于塑封体内部分的大小。
根据本实用新型优选的，所述散热片为铜、铝或氧化铝，均为高导热材料。
根据本实用新型优选的，所述引脚材质为铜，引脚厚度为0.14mm-0.35mm，其表面镀有纯锡，锡层厚度为0.005mm-0.03mm。
本实用新型的有益效果是：
1、本实用新型在不改变表面贴装功率器件外形的情况下，内嵌散热片，在保证兼容大多数类似封装的情况下，提高了散热效果，使得封装的产品有更低的热阻，较同外形尺寸的其它封装形式的稳态热阻减少大约5%，瞬态热阻减少大约50%，封装的功率密度（W/mm2）装提高大约12%，提高了器件的可靠性。
2、本实用新型的封装体内部采用三明治结构，内嵌的散热片与引脚采用钎焊或高导热、耐高温胶粘连，有极好的散热效果，尤其是抗脉冲功率（或电流）冲击能力大幅度提高。
3、本实用新型的封装适用于大功率二极管芯片、稳压管芯片、整流二极管、肖特基芯片和VS等产品，能满足后级产品的小型化高功率密度封装。
附图说明
图1为本实用新型的主视结构示意图。
图2为本实用新型的侧视结构示意图。
图3为本实用新型的俯视结构示意图。
图中，1、塑封体，2、引脚，21、左引脚，22、右引脚，3、散热片。
具体实施方式
为了便于本领域人员更好的理解本实用新型，下面结合附图和具体实施例对本实用新型做进一步详细说明，下述仅是示例性的不限定本实用新型的保护范围。
如图1-3所示，本实用新型的高散热性能的表面贴装功率器件封装结构，包括塑封体1，其长度为4.5mm-8.6mm、宽度为3.5mm-6.5mm、厚度为2.0mm-3.5mm；塑封体内设置有引脚2且引脚伸出至塑封体外，引脚2既能导电还能实现散热，其材质为铜，引脚厚度为0.14mm-0.35mm，其表面镀有纯锡，锡层厚度为0.005mm-0.03mm，所述引脚2包括形状均为折弯回包状的左引脚21和右引脚22，左引脚和右引脚位于塑封体外两端的部分相对称，所述左引脚21位于塑封体内的部分设置于右引脚22位于塑封体内的部分的下方，右引脚22位于塑封体内部分的上表面设置有散热片3，散热片3为高热材料，包括铜、铝或氧化铝，散热片3的大小相等或略小于右引脚22位于塑封体内部分的大小，散热片3与引脚2之间采用钎焊或高导热、耐高温胶粘连，有极好的散热效果，尤其是抗脉冲功率（或电流）冲击能力大幅度提高。另外，功率器件内部采用三明治结构，上下焊盘采用一类冶金键合方法焊接，使得热流回路更短，且可双向进行散热。
采用铜散热片时，可直接采用高温锡焊膏焊接，且可以与芯片焊接同步进行，传热效果好，生产效率高；采用铝散热片时，先进行表面氧化和冷覆铜技术，然后采用高温锡膏与引脚焊接；采用氧化铝陶瓷散热片时，先预制表面金属化，采用钯银浆料高温烧制，然后采用高温锡膏与引脚焊接。可知，本实用新型内嵌散热片，并不是简单的将散热片嵌入到塑封体内，而是要根据器件的结构和散热片材质的不同采取不同的处理方式和不同的焊接方法。
本实用新型的高散热性能的表面贴装功率器件封装结构，在保证兼容大多数类似封装的情况下，提高了散热效果，使得封装的产品有更低的热阻，较同外形尺寸的其它封装形式的稳态热阻减少大约5%，瞬态热阻减少大约50%，封装的功率密度（W/mm2）装提高大约12%，提高了器件的可靠性。
以上仅描述了本实用新型的基本原理和优选实施方式，本领域人员可以根据上述描述作出许多变化和改进，这些变化和改进应该属于本实用新型的保护范围。

Claims (5)

1.一种高散热性能的表面贴装功率器件封装结构，包括塑封体（1），塑封体内设置有引脚（2）且引脚伸出至塑封体外,其特征在于：所述引脚（2）位于塑封体内部分的上表面设置有散热片（3）。
2.根据权利要求1所述的封装结构，其特征在于：所述引脚（2）包括形状均为折弯回包状的左引脚（21）和右引脚（22），左引脚和右引脚位于塑封体外两端的部分相对称，所述左引脚（21）位于塑封体内的部分设置于右引脚（22）位于塑封体内的部分的下方，散热片（3）设置于右引脚（22）位于塑封体内部分的上表面。
3.根据权利要求1或2所述的封装结构，其特征在于：所述散热片（3）的大小不大于右引脚（22）位于塑封体内部分的大小。
4.根据权利要求1所述的封装结构，其特征在于：所述散热片（3）为铜、铝或氧化铝。
5.根据权利要求1所述的封装结构，其特征在于：所述引脚（2）材质为铜，引脚厚度为0.14mm-0.35mm，其表面镀有纯锡，锡层厚度为0.005mm-0.03mm。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105529320A (zh) * 2016-01-25 2016-04-27 山东晶导微电子有限公司 一种内嵌散热片的表面贴装功率器件封装结构

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105529320A (zh) * 2016-01-25 2016-04-27 山东晶导微电子有限公司 一种内嵌散热片的表面贴装功率器件封装结构

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Address after: 273100 No. 166 Chunqiu East Road, Qufu City, Jining City, Shandong Province

Patentee after: Shandong crystal guided microelectronic Limited by Share Ltd

Address before: 273100 Taiwan City Industrial Park, Qufu City, Jining, Shandong.

Patentee before: Shandong Jing Dao Microtronics A/S