CN205282467U - Power semiconductor encapsulation - Google Patents
Power semiconductor encapsulation Download PDFInfo
- Publication number
- CN205282467U CN205282467U CN201521144464.6U CN201521144464U CN205282467U CN 205282467 U CN205282467 U CN 205282467U CN 201521144464 U CN201521144464 U CN 201521144464U CN 205282467 U CN205282467 U CN 205282467U
- Authority
- CN
- China
- Prior art keywords
- heat dissipation
- hole
- antenna
- metal bar
- power semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a power semiconductor encapsulation, including upper cover, base, semiconductor chip and antenna, be provided with metal heat dissipation strip above the upper cover, metal heat dissipation strip is cylindric setting, be provided with horizontal through -hole and vertical through -hole on the metal heat dissipation strip, horizontal through -hole is linked together with vertical through -hole, horizontal through -hole constitutes the crosswise with vertical through -hole, horizontal through -hole all scribbles thermal coatings with vertical through -hole surface, form the sealing layer between upper cover and the base, semiconductor chip and antenna all are located the sealing layer, semiconductor chip and antenna are all installed on the base, semiconductor chip and antenna connection, semiconductor chip and base electric connection, the antenna is connected with metal heat dissipation strip, this power semiconductor encapsulation has good radiating effect.
Description
Technical field
The utility model relates to a kind of power semiconductor package.
Background technology
Semiconductor production flow process is made up of test after wafer manufacture, wafer sort, Chip Packaging and encapsulation. After plastic packaging, also to be carried out a series of operation, such as after fixing (PostMoldCure), cut muscle and shaping (Trim&Form), the plating technique such as (Plating) and printing. Typical packaging process flow process is: muscle is cut in the bonding plastic packaging defining plating printing of scribing load and molded appearance checks finished product test packaging shipment.
But current power type semiconductor encapsulates owing to the bigger thermal value of own power is big, and heat dispersion is general, causes the life-span to be affected.
Practical novel content
The technical problems to be solved in the utility model is to provide a kind of power semiconductor package with good radiating effect.
For solving the problem, the utility model adopts following technical scheme:
A kind of power semiconductor package, comprise upper cover, pedestal, semi-conductor chip and antenna, heat dissipation metal bar it is provided with above described upper cover, described heat dissipation metal bar is that cylinder shape is arranged, described heat dissipation metal bar is provided with cross through hole and longitudinal hole, described cross through hole is connected with longitudinal hole, described cross through hole and longitudinal hole form crosswise, described cross through hole and longitudinal hole surface all scribble heat radiation coating, sealing ply is formed between described upper cover and pedestal, described semi-conductor chip and antenna are all positioned at sealing ply, described semi-conductor chip and antenna are all installed on pedestal, described semi-conductor chip and antenna connect, described semi-conductor chip and pedestal are electrically connected, described antenna is connected with heat dissipation metal bar.
As preferably, described upper cover is fixedly connected with pedestal, good integrity, Stability Analysis of Structures.
As preferably, described heat dissipation metal bar is embedded in upper cover and arranges, it is possible to increase the contact area of heat dissipation metal bar and upper cover, accelerate heat transfer speed.
As preferably, described heat dissipation metal bar is provided with more than one.
As preferably, described heat dissipation metal bar rectangular array distributes.
As preferably, described heat radiation coating smearing thickness is 0.1cm.
As preferably, described heat dissipation metal bar length is 1cm.
As preferably, described antenna is fixedly connected with pedestal, Stability Analysis of Structures.
The beneficial effects of the utility model are: by being provided with heat dissipation metal bar upper covering, can by the heat that covers be delivered to rapidly on heat dissipation metal bar, and heat dissipation metal bar is provided with cross through hole and longitudinal hole, the contact area with freezing air can be increased, and cross through hole and longitudinal hole surface all scribble heat radiation coating, thus play good radiating effect.
Accompanying drawing explanation
Fig. 1 is the one-piece construction schematic diagram of a kind of power semiconductor package of the utility model.
Fig. 2 is the internal structure schematic diagram of a kind of power semiconductor package of the utility model.
Embodiment
As shown in Figure 1-2, a kind of power semiconductor package, comprise upper cover 1, pedestal 2, semi-conductor chip 3 and antenna 4, described upper cover 1 is provided with heat dissipation metal bar 5 above, described heat dissipation metal bar 5 is the setting of cylinder shape, described heat dissipation metal bar 5 is provided with cross through hole 6 and longitudinal hole 7, described cross through hole 6 is connected with longitudinal hole 7, described cross through hole 6 and longitudinal hole 7 form crosswise, described cross through hole 6 and longitudinal hole 7 surface all scribble heat radiation coating (not shown), sealing ply 8 is formed between described upper cover 1 and pedestal 2, described semi-conductor chip 3 and antenna 4 are all positioned at sealing ply 8, described semi-conductor chip 3 and antenna 4 are all installed on pedestal 2, described semi-conductor chip 3 and antenna 4 connect, described semi-conductor chip 3 and pedestal 2 are electrically connected, described antenna 4 is connected with heat dissipation metal bar 5.
Described upper cover 1 is fixedly connected with pedestal 2, good integrity, Stability Analysis of Structures.
Described heat dissipation metal bar 5 is embedded in upper cover 1 and arranges, it is possible to increases the contact area of heat dissipation metal bar 5 with upper cover 1, accelerates heat transfer speed.
Described heat dissipation metal bar 5 is provided with more than one.
Described heat dissipation metal bar 5 rectangular array distributes.
Described heat radiation coating smearing thickness is 0.1cm.
Described heat dissipation metal bar 5 length is 1cm.
Described antenna 4 is fixedly connected with pedestal 2, Stability Analysis of Structures.
The beneficial effects of the utility model are: by being provided with heat dissipation metal bar upper covering, can by the heat that covers be delivered to rapidly on heat dissipation metal bar, and heat dissipation metal bar is provided with cross through hole and longitudinal hole, the contact area with freezing air can be increased, and cross through hole and longitudinal hole surface all scribble heat radiation coating, thus play good radiating effect.
The above, be only embodiment of the present utility model, but protection domain of the present utility model is not limited thereto, and any change of expecting without creative work or replacement, all should be encompassed within protection domain of the present utility model.
Claims (8)
1. a power semiconductor package, it is characterized in that: comprise upper cover, pedestal, semi-conductor chip and antenna, heat dissipation metal bar it is provided with above described upper cover, described heat dissipation metal bar is that cylinder shape is arranged, described heat dissipation metal bar is provided with cross through hole and longitudinal hole, described cross through hole is connected with longitudinal hole, described cross through hole and longitudinal hole form crosswise, described cross through hole and longitudinal hole surface all scribble heat radiation coating, sealing ply is formed between described upper cover and pedestal, described semi-conductor chip and antenna are all positioned at sealing ply, described semi-conductor chip and antenna are all installed on pedestal, described semi-conductor chip and antenna connect, described semi-conductor chip and pedestal are electrically connected, described antenna is connected with heat dissipation metal bar.
2. power semiconductor package according to claim 1, it is characterised in that: described upper cover is fixedly connected with pedestal.
3. power semiconductor package according to claim 2, it is characterised in that: described heat dissipation metal bar is embedded in upper cover and arranges.
4. power semiconductor package according to claim 3, it is characterised in that: described heat dissipation metal bar is provided with more than one.
5. power semiconductor package according to claim 4, it is characterised in that: described heat dissipation metal bar rectangular array distributes.
6. power semiconductor package according to claim 5, it is characterised in that: described heat radiation coating smearing thickness is 0.1cm.
7. power semiconductor package according to claim 6, it is characterised in that: described heat dissipation metal bar length is 1cm.
8. power semiconductor package according to claim 7, it is characterised in that: described antenna is fixedly connected with pedestal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521144464.6U CN205282467U (en) | 2015-12-31 | 2015-12-31 | Power semiconductor encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201521144464.6U CN205282467U (en) | 2015-12-31 | 2015-12-31 | Power semiconductor encapsulation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205282467U true CN205282467U (en) | 2016-06-01 |
Family
ID=56067011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201521144464.6U Expired - Fee Related CN205282467U (en) | 2015-12-31 | 2015-12-31 | Power semiconductor encapsulation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205282467U (en) |
-
2015
- 2015-12-31 CN CN201521144464.6U patent/CN205282467U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160601 Termination date: 20191231 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |