CN205257993U - 表面安装器件 - Google Patents

表面安装器件 Download PDF

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CN205257993U
CN205257993U CN201520755154.1U CN201520755154U CN205257993U CN 205257993 U CN205257993 U CN 205257993U CN 201520755154 U CN201520755154 U CN 201520755154U CN 205257993 U CN205257993 U CN 205257993U
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surface mount
mount device
contact terminal
base regions
encapsulation
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F·V·丰塔纳
J·塔利多
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STMicroelectronics International NV
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STMicroelectronics SRL
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Abstract

本公开涉及表面安装器件。表面安装器件(50)具有诸如ASIC之类的半导体材料的一个主体(6)和包围主体的封装。封装具有承载主体的基部区域(15)、盖(20)和接触端子(3)。基部区域(15)具有低于5MPa的杨氏模量。为了形成器件，将主体(6)附接至包括由空腔分开的接触端子(3)和裸片焊盘(2)的支撑框架(1)；将键合接线(14)焊接至主体(6)并焊接至接触端子(3)；以至少部分包围主体(6)的侧面、填充支撑框架(1)的空腔且覆盖键合接线(14)的在接触端子上的端部的方式模制弹性材料；和将盖(20)固定至基部区域(15)。接着将裸片焊盘(2)蚀刻掉。

Description

表面安装器件
技术领域
本实用新型涉及用于诸如MEMS压力传感器之类的对机械和热机械应力敏感的半导体器件的封装。
背景技术
如已知的，诸如集成电路和MEMS器件之类的半导体器件通常被包封在用于它们的保护和处理的封装中。在下文中，对允许表面安装的封装进行参考。
目前，用于MEMS传感器的表面安装封装的最常用的类型是所谓LGA(焊区栅格阵列)封装，其在封装的下侧面具有触点的方形栅格。
然而，用于MEMS压力传感器的标准LGA封装不符合其中提供印刷电路板的焊接检查的汽车要求。因此，使用了所谓方形扁平无引线单行(QFN-Sr)、也称作微引线框架(MLF)和SON(小外形无引线)封装，也就是允许表面安装且具有在底表面上的一个外围行端子的封装。
在标准QFN技术中，后模制引线框架，并且使用具有接近金属引线框架的热膨胀系数(CTE)的热膨胀系数的树脂来填充空的空间，以便避免层离。然而，这些树脂具有高弹性模量并且封装非常硬。作为结果，机械和热机械应力在PCB卡上的焊接之后被传输至压力传感器，导致偏移和漂移。传感器的读数因此受到如下所述因素的负面影响：由于在车辆上产生并且通过硬封装被传输至传感器的应力而引起的噪声；或者，由于焊接连接冷却而在表面安装过程期间产生的应力；由于机械公差失配而在安装在车辆上的期间产生的应力，或由于驾驶舱温度改变而在器件寿命期间产生的应力。
在所谓的预模制QFN的不同封装中，可以具有有着预模制塑料空腔的引线框架。该解决方案解决了避免由封装的树脂引起的但不是由铜引线框架所传输的应力引起的应力传输的问题。
因此，预模制或后模制的标准QFN封装不能用于旨在用于汽车应用的MEMS压力传感器。
另一方面，归因于超声波接线键合期间的衬底翘曲和差的超声波传输的风险，低模量衬底LGA的使用是不可能的。
实用新型内容
因此，本实用新型的目的是提供一种克服现有技术解决方案的缺点的用于QFN类型的半导体器件的封装。
根据本实用新型，提供了一种表面安装器件，包括半导体材料的至少一个主体和包围所述主体的封装，所述封装包括承载所述主体的基部区域、盖和接触端子，其中所述基部区域具有低于5MPa的杨氏模量。
根据实施例，所述基部区域是在具有低于5MPa、例如低于2MPa的杨氏模量的硅树脂和非硅树脂材料之中选择出的材料。
根据实施例，所述基部区域具有在所述主体下面的空腔和被附接至所述主体的外围下部分的内部环形部分。
根据实施例，键合接线在所述主体与所述接触端子之间延伸且具有被附接至所述接触端子的端部，所述基部区域覆盖所述键合接线的所述端部并且部分地包围所述接触端子。
根据实施例，所述盖被直接固定至所述基部区域。
根据实施例，所述表面安装器件进一步包括在所述盖与所述基部区域之间延伸且限制所述主体朝向所述盖的移动的阻尼结构。
根据实施例，所述阻尼结构包括弹性材料的凸块。
根据实施例，所述主体包括集成电路裸片、被安装在所述集成电路裸片上的诸如压力传感器之类的MEMS部件。
根据实施例，裸片附接膜在所述MEMS部件与所述集成电路裸片之间延伸。
根据实施例，键合接线在所述MEMS部件与所述接触端子之间延伸，所述器件进一步包括弹性材料的凸块，所述弹性材料的凸块在所述MEMS部件的侧面上延伸且具有防止所述键合接线在所述器件的跌落的情况下撞击所述盖的高度。
在实践中，代替使用预模制刚性引线框架，封装具有弹性材料的基部区域，具有低于5MPa的杨氏模量，基部区域在附接裸片之后模制在引线框架上。在实施例中，将标准引线框架的裸片附接焊盘去除，以便增加封装的弹性。可以提供阻尼结构，以在掉落的情况下保护键合接线和裸片。
附图说明
为了理解本实用新型，现在参照附图纯粹作为非限制性实施例来描述优选实施例，其中：
-图1至图6是示出了根据即时的被封装器件的实施例的随后的封装步骤的截面；
-图7在立体图中示出图6的中间的被封装器件；
-图8是沿着图7的剖面VIII-VIII截取的截面；
-图9是示出跟随图6的步骤的封装步骤的截面；
-图10在立体图中示出图9的中间的被封装器件；
-图11至图14是示出跟随图9的步骤的随后的封装步骤的截面；
-图15是在掉落的情况下的即时的被封装器件的变形的模拟；
-图16是从不同实施例的盖的底部看到的立体图；和
-图17是具有图16的盖的被封装器件的立体俯视图。
具体实施方式
图1示出了包括被附接在粘合带4上的裸片焊盘2和多个端子3的用于QFN(方形扁平无引线)封装的支撑框架1。支撑框架1是引线框架并且可以由诸如铜、铝和类似物之类的任何合适材料制成。在该实施例中，裸片焊盘2未电镀在底部，而端子3被电镀在底部和侧面上。例如，端子3可以是以用于QFN封装的本身已知的方式电镀的Ni、Pd、Au或类似物。粘合带4可以是被附接至支撑框架1的背面侧的热塑性标准的粘合带。
接着，图2，将第一粘合膜5附接至裸片焊盘2的正表面并且将第一裸片6放置在第一粘合膜5上。第一裸片6大于裸片焊盘2。第一粘合层5可以是当前在半导体工业中使用的DAF(裸片附接膜)；例如，它可以是诸如日东电工株式会社(NittoDenkoCorporation)生产的LE5003之类的层叠在支撑框架1上的已知环氧树脂。可以例如通过标准切割或单片化将第一粘合膜5与第一裸片6一起在将它们放置在引线框架1上之前做出形状，其中第一粘合膜5被附接在包括第一裸片6的晶片的底表面上。第一裸片6可以是包括信号处理单元的诸如ASIC(专用集成电路)之类的集成电路。
此后，图3，将在底部附接有第二粘合膜10的第二裸片11放置在第一裸片6的上面上。第二粘合膜10可以是以相同方式放置和做出形状的类似于第一粘合膜5的DAF。第二裸片11可以是图3中仅示意性地示出的具有膜片12的诸如压力传感器之类的MEMS部件。
接着使第一和第二粘合膜5、10在烤炉中在氮气体气氛中在例如160℃至180℃进行固化。
接着将键合接线14在一端附接在端子3之间并且在另一端附接至第一裸片6或第二裸片11，图4。键合接线14可以是利用适用于预期的应用的已知标准技术附接的标准铜键合接线。
接着，图5，形成基部区域15。基部区域15是弹性材料，例如具有小于5MPa、例如低于2MPa的非常低的杨氏模量E的硅树脂粘合剂，它在半流体状态被施加、例如被分配，以便填充支撑框架1的在裸片焊盘2与端子3之间的空腔。在可选方案中，可以使用具有所指示的低杨氏模量和良好的粘合至铜的粘合性的弹性体的非硅树脂材料。例如，可以使用道康宁公司(DownCorningCorporation)制造的DA6503。基部区域15具有比支撑框架1高的厚度，以便覆盖端子以及键合接线14的被附接至端子的端部。由于在这里第一裸片6大于裸片焊盘2并因此覆盖后者的上表面，所以基部区域15未延伸在裸片焊盘2的上面，但横向包围裸片焊盘2以及第一裸片6的侧表面的至少下部分。
根据图7至图9，形成阻尼结构16。在所考虑的实施例中，阻尼结构16包括与第二裸片11横向地形成在第一裸片6的正表面上的两个凸块17。例如，阻尼结构16可以由与基部区域15相同的硅树脂弹性材料制成并且凸块17可以均在第二裸片11的相应的不同侧上延伸。然而，凸块17可以形成在不同位置，如后面讨论的，或者可以是不同材料，只要它们确保期望的阻尼效果即可，如下面讨论的。
根据图9和图10，将盖20附接至基部区域15，从而形成被封装器件50。盖20可以是铝的或玻璃增强的塑料的盖，具有孔21以允许盖20的内部到外部的流体连接，由此使第二裸片11暴露于外部环境。
接着，使基部区域15在静态烤炉中以150℃至170℃的温度进行固化。
根据图11，将保护带22施加在盖20的上表面上，以便覆盖孔21。例如，保护带22可以是聚酰亚胺或的或者是对支撑框架1的蚀刻溶液有抵抗力的任何材料，如下面讨论的。
根据图12，接着将粘合带4去除、例如从被封装器件50的背面剥离。
接着图13，使用诸如氨溶液之类的碱性溶液对裸片焊盘2进行蚀刻。在蚀刻期间，端子3通过电镀被保护。由于裸片焊盘2小于第一粘合膜5和第一裸片6，所以基部区域15部分地通过第一粘合膜5被附接至第一裸片6的外围下部。另外，如上面所指示的，保护带22防止蚀刻剂进入盖20并防止与裸片6、11接触。接着，洗涤被封装器件50。因此，得到由盖20与基部区域15形成的封装，其中基部区域15具有空腔23，空腔23在裸片6、11下方延伸且由基部区域15的被胶合至且支撑第一裸片6的内部环形部分15A在横向上界定。第一裸片6因此仅在下边缘由基部区域15的内部环形部分15A保持，第一裸片6部分地通过插入第一粘合膜5而被牢固地胶合至基部区域15的内部环形部分15A。作为结果，在该实施例中，被封装器件50具有由基部区域15形成的弹性的低模量的基部，并且没有刚性金属焊盘区域在第一裸片6下方延伸。
最后，图14，将保护带22去除并且例如利用焊膏(未示出)将被封装器件50键合至诸如印刷电路板PCB之类的支撑件25上。
由申请人执行的测试显示，被封装器件50的低模量基部区域15在缓解器件的制造、安装和寿命期间产生的所有机械和热机械应力方面非常良好。实际上，基部区域15可靠地防止了在将被封装器件50焊接至支撑件25期间或将支撑件25安装在合适位置期间所产生的应力被传输至第二裸片11。相同的解耦动作也在被封装器件50的操作期间被确保，因为被封装器件50被焊接在支撑件25(SMT-表面安装技术卡)上，例如在归因于温度变化的应力的情况下。
另外，基部区域15覆盖了键合接线14的被焊在端子3上的端部，由此保护它们不受潮湿和机械应力的影响。
基部区域15还形成了用于盖20的附接结构，由此确保被封装器件50的非常良好的紧密性。
基部区域15的柔性允许了DAF类型的粘合膜5、10的使用成为封装成本的优点，DAF类型的粘合膜固有地比标准胶水更刚性且可以用较快且较简单的过程施加。
阻尼结构16也在掉落的情况下为被封装器件50提供了良好的保护。实际上，如图15所示，归因于基部区域15的非常高的可变形性，所描述的被封装器件50具有相对于预模制封装的较高的柔性并因此具有在冲击和掉落的情况下的较高的变形趋势。然而，在该情况下，阻尼结构16首先撞击盖20并限制裸片6、11的移动。基部区域15的过度变形也通过凸块17被防止。由此裸片6、11和键合接线14不会被损坏。这在当第二裸片11是具有悬置膜片12的MEMS压力传感器时特别重要。特别地，在由申请人执行的测试中，已经证明，即使在器件50上下颠倒布置的状态下抵着刚性钢表面跌落高于1m的高度的情况下，凸块17也会保护裸片6、11并且被封装器件50仍然可操作且完美地起作用，由此符合2007年5月14日的AEC-Q100-REVG中汽车领域的当前规范。被封装器件50因此可靠地适用于汽车领域，例如以测量高度计驾驶舱中的空气流动(作为差动压力器件)，或者作为基于差动压力测量的空气流动测量器件，以设置驾驶舱中的空气调节流动。
最后，很明显可以对这里所描述和图示出的器件做出若干变型和修改，所有都落入如随附权利要求所限定的实用新型的范围内。
例如，阻尼结构16可以具有不同形状和/或形成在不同位置。图16和图17示出了阻尼结构16’的实施例，其中凸块17在预期在将盖20安装至基部区域15之后面对第一裸片6的位置(如图17所示)被附接至盖20的内表面20A。作为备选方案，凸块17可以以横向于键合接线14面对基部区域15的方式布置，以便当基部区域15在掉落或跌落期间变形时保护键合接线不被损坏。在一些实施例中，凸块17也可以在接线键合之后、在使连接至裸片的导线连接部分地嵌入的情况下形成在第二裸片11上、在远离感测膜片区域(膜片12)的裸片表面上。
在任何情况下，凸块17都具有如下高度：该高度使得它们与盖20(如果形成在第一裸片6或基部区域15上)或与面对表面(如果形成在盖20上时，是第一裸片6或基部区域15)相距的距离低于键合接线14与盖20相距的距离，以在器件跌落期间保护它们。

Claims (10)

1.一种表面安装器件(50)，其特征在于，包括半导体材料的至少一个主体(6)和包围所述主体的封装，所述封装包括承载所述主体的基部区域(15)、盖(20)和接触端子(3)，其中所述基部区域(15)具有低于5MPa的杨氏模量。
2.根据权利要求1所述的表面安装器件，其特征在于，所述基部区域(15)是在具有低于5MPa、例如低于2MPa的杨氏模量的硅树脂和非硅树脂材料之中选择出的材料。
3.根据权利要求1或2所述的表面安装器件，其特征在于，所述基部区域(15)具有在所述主体(6)下面的空腔(23)和被附接至所述主体的外围下部分的内部环形部分。
4.根据权利要求1或2所述的表面安装器件，其特征在于，键合接线(14)在所述主体(6)与所述接触端子(3)之间延伸且具有被附接至所述接触端子的端部，所述基部区域(15)覆盖所述键合接线(14)的所述端部并且部分地包围所述接触端子(3)。
5.根据权利要求1或2所述的表面安装器件，其特征在于，所述盖(20)被直接固定至所述基部区域(15)。
6.根据权利要求1或2所述的表面安装器件，其特征在于，进一步包括在所述盖(20)与所述基部区域(15)之间延伸且限制所述主体(6)朝向所述盖的移动的阻尼结构(16)。
7.根据权利要求6所述的表面安装器件，其特征在于，所述阻尼结构(16)包括弹性材料的凸块(17)。
8.根据权利要求1或2所述的表面安装器件，其特征在于，所述主体包括集成电路裸片(6)、被安装在所述集成电路裸片(6)上的诸如压力传感器之类的MEMS部件(11)。
9.根据权利要求8所述的表面安装器件，其特征在于，裸片附接膜(10)在所述MEMS部件(11)与所述集成电路裸片(6)之间延伸。
10.根据权利要求8所述的表面安装器件，其特征在于，键合接线(14)在所述MEMS部件(11)与所述接触端子(3)之间延伸，所述器件(50)进一步包括弹性材料的凸块(17)，所述弹性材料的凸块(17)在所述MEMS部件的侧面上延伸且具有防止所述键合接线在所述器件(50)的跌落的情况下撞击所述盖(20)的高度。
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