CN204927320U - 发光设备 - Google Patents
发光设备 Download PDFInfo
- Publication number
- CN204927320U CN204927320U CN201520328294.0U CN201520328294U CN204927320U CN 204927320 U CN204927320 U CN 204927320U CN 201520328294 U CN201520328294 U CN 201520328294U CN 204927320 U CN204927320 U CN 204927320U
- Authority
- CN
- China
- Prior art keywords
- layer
- semiconductor layer
- nitride semiconductor
- type nitride
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 137
- 150000004767 nitrides Chemical class 0.000 claims abstract description 126
- 238000009792 diffusion process Methods 0.000 claims abstract description 70
- 230000004888 barrier function Effects 0.000 claims abstract description 4
- 239000000956 alloy Substances 0.000 claims description 30
- 229910045601 alloy Inorganic materials 0.000 claims description 30
- 239000010410 layer Substances 0.000 description 222
- 239000011777 magnesium Substances 0.000 description 130
- 238000000034 method Methods 0.000 description 45
- 239000000758 substrate Substances 0.000 description 21
- 229910002601 GaN Inorganic materials 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
- 229910052749 magnesium Inorganic materials 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 230000000630 rising effect Effects 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 230000007613 environmental effect Effects 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000036278 prepulse Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 241000720974 Protium Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- -1 magnesium nitride Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2014-0060231 | 2014-05-20 | ||
| KR20140060231 | 2014-05-20 | ||
| KR1020140129305A KR20150133622A (ko) | 2014-05-20 | 2014-09-26 | 발광 소자 및 그 제조 방법 |
| KR10-2014-0129305 | 2014-09-26 | ||
| KR10-2014-0193540 | 2014-12-30 | ||
| KR1020140193540A KR20150133628A (ko) | 2014-05-20 | 2014-12-30 | 발광 소자 및 그 제조 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204927320U true CN204927320U (zh) | 2015-12-30 |
Family
ID=54868055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520328294.0U Expired - Fee Related CN204927320U (zh) | 2014-05-20 | 2015-05-20 | 发光设备 |
Country Status (2)
| Country | Link |
|---|---|
| KR (2) | KR20150133622A (ko) |
| CN (1) | CN204927320U (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105098001A (zh) * | 2014-05-20 | 2015-11-25 | 首尔伟傲世有限公司 | 发光设备及其制造方法 |
-
2014
- 2014-09-26 KR KR1020140129305A patent/KR20150133622A/ko unknown
- 2014-12-30 KR KR1020140193540A patent/KR20150133628A/ko not_active Application Discontinuation
-
2015
- 2015-05-20 CN CN201520328294.0U patent/CN204927320U/zh not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105098001A (zh) * | 2014-05-20 | 2015-11-25 | 首尔伟傲世有限公司 | 发光设备及其制造方法 |
| CN105098001B (zh) * | 2014-05-20 | 2019-02-01 | 首尔伟傲世有限公司 | 发光设备及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150133628A (ko) | 2015-11-30 |
| KR20150133622A (ko) | 2015-11-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151230 |