CN204927320U - Light -emitting apparatus - Google Patents
Light -emitting apparatus Download PDFInfo
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- CN204927320U CN204927320U CN201520328294.0U CN201520328294U CN204927320U CN 204927320 U CN204927320 U CN 204927320U CN 201520328294 U CN201520328294 U CN 201520328294U CN 204927320 U CN204927320 U CN 204927320U
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- 239000004065 semiconductor Substances 0.000 claims abstract description 137
- 150000004767 nitrides Chemical class 0.000 claims abstract description 126
- 238000009792 diffusion process Methods 0.000 claims abstract description 70
- 230000004888 barrier function Effects 0.000 claims abstract description 4
- 239000000956 alloy Substances 0.000 claims description 30
- 229910045601 alloy Inorganic materials 0.000 claims description 30
- 239000010410 layer Substances 0.000 description 222
- 239000011777 magnesium Substances 0.000 description 130
- 238000000034 method Methods 0.000 description 45
- 239000000758 substrate Substances 0.000 description 21
- 229910002601 GaN Inorganic materials 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
- 229910052749 magnesium Inorganic materials 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 230000000630 rising effect Effects 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 230000007613 environmental effect Effects 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000036278 prepulse Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 241000720974 Protium Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- -1 magnesium nitride Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The utility model provides a light -emitting apparatus. This light -emitting apparatus includes: N type nitride semiconductors layer, the active layer of setting on n type nitride semiconductors layer, the p type nitride semiconductors layer of setting on the active layer, and set up the diffusion barrier layer on p type nitride semiconductors layer. According to the utility model discloses an embodiment can prevent mg's outside diffusion to can provide one kind including having low contact resistance and forward voltage who consequently hangs down and high luminous efficacy's p type nitride semiconductors layer.
Description
The priority of the 10-2014-0129305 korean patent application that the 10-2014-0060231 korean patent application that this patent document requires on May 20th, 2014 to submit to, on September 26th, 2014 submit to and the 10-2014-0193540 korean patent application that on December 30th, 2014 submits to and rights and interests, and the content of these documents is with combined with reference to mode.
Technical field
This patent document relates to luminaire and manufacture method thereof.In the exemplary embodiment, provide a kind of method that growth has the p-type nitride-based semiconductor of low surface contacted resistance, and provide a kind of luminaire utilizing described method to manufacture.
Background technology
The nitride-based semiconductor of such as GaN has outstanding electromagnetic property, and is widely used in the luminaire of such as light-emitting diode.The nitride-based semiconductor equipment (such as light-emitting diode) of P-N junction is used to comprise p-type semiconductor layer and n-type semiconductor layer.Now, each in p-type semiconductor layer and n-type semiconductor layer all doped with conduction type determination impurity, such as Mg and Si.
Usually, the luminaire of nitride-based semiconductor is utilized to be formed by growing n-type nitride semiconductor layer in growth substrates, active layer and p-type nitride semiconductor layer.In the process of growth light-emitting diode, grow p-type nitride semiconductor layer by III element, V group element and impurity predecessor (such as Mg) are introduced growth chamber.Now, Mg substitutes the position of III element, makes nitride-based semiconductor be doped to p-type.This p-type nitride semiconductor layer grows usually under hydrogen environment in growth chamber.
Utility model content
The purpose of this utility model is at least one shortcoming overcoming or improve prior art, or provides a kind of selection more.
Exemplary embodiment provides a kind of luminaire, and it can stop the outside of Mg to be spread, and can provide have low contact resistance and the p-type nitride semiconductor layer of therefore low forward voltage and high-luminous-efficiency a kind of comprising.
Exemplary embodiment provides a kind of method manufacturing luminaire, and it can prevent the increase of the contact resistance of p-type nitride semiconductor layer in the process of the internal temperature reducing nitride semiconductor growing chamber.
According to an exemplary embodiment, a kind of method manufacturing luminaire comprises: growing n-type nitride semiconductor layer in growth substrates; Growth activity layer in n-type nitride semiconductor layer; On active layer, p-type nitride semiconductor layer is grown by introducing III element source, V group element source and p-type alloy to chamber at a first temperature; Chamber interior is cooled to the second temperature from the first temperature, wherein cooling procedure at least partially in by p-type alloy introduce chamber.
Correspondingly, because the outside diffusion of Mg can be prevented from, therefore, it is possible to provide a kind of luminaire comprising the p-type nitride semiconductor layer with low contact resistance.
Chamber interior is cooled to the second temperature from the first temperature can be included in p-type nitride semiconductor layer and formed and comprise the diffusion impervious layer of p-type alloy.
In addition, p-type alloy can be Mg, and diffusion impervious layer can comprise Mg and Mg
xn
yin at least one.
Chamber interior is being cooled to the process of the second temperature from the first temperature, can stopping introducing III element source to chamber, and can keep introducing V group element source.
The method manufacturing luminaire may further include, by chamber interior from after the first temperature is cooled to the second temperature, chamber interior was maintained the second temperature scheduled time, wherein can chamber interior maintain the period of the second temperature at least partially in by p-type alloy introduce chamber, diffusion impervious layer can be grown while chamber interior is maintained the second temperature.
In addition, chamber interior is being cooled to the second temperature from the first temperature and during chamber interior is maintained the second temperature, can continue to introduce V group element source, and the flow velocity in the V group element source of introducing in the growth course of p-type nitride semiconductor layer can greater than or equal to the flow velocity in the V group element source of introducing in diffusion impervious layer growth course.
The flow velocity of the p-type alloy introduced in P-type nitride semiconductor growth course can greater than or equal to the flow velocity of the p-type alloy introduced in diffusion impervious layer growth course.
In the forming process of diffusion impervious layer, p-type alloy can be introduced in chamber under multi-pulse mode, and diffusion impervious layer can comprise the Mg of wherein rich Mg
xn
ythe Mg of layer and poor Mg
xn
ythe structure of layer repeatedly stacking.
In addition, in the forming process of diffusion impervious layer, III element source and p-type alloy can be introduced in chamber under multi-pulse mode, and diffusion impervious layer can comprise wherein Mg
xn
ythe structure of layer and GaN layer repeatedly stacking.
The method may further include, and is being cooled to the process of the second temperature by chamber interior from the first temperature, at least at the middle at least partially dull flow velocity reducing III element source p-type alloy being introduced this period of chamber.
In certain embodiments, chamber interior is being cooled to the process of the second temperature from the first temperature, at least p-type alloy is introduced this period of chamber at least partially in multi-pulse mode, III element source is introduced in chamber, and in this multi-pulse mode, follow-up pulse can have the duration shorter than last pulse.
According to another exemplary embodiment, luminaire comprises: n-type nitride semiconductor layer; Be arranged on the active layer in n-type nitride semiconductor layer; Be arranged on the p-type nitride semiconductor layer on active layer; And the diffusion impervious layer be arranged on p-type nitride semiconductor layer.
Diffusion impervious layer can comprise p-type alloy.
P-type alloy can be Mg, and diffusion impervious layer can comprise Mg and Mg
xn
yin at least one.
In addition, diffusion impervious layer can comprise the Mg of the Mg wherein with the first concentration
xn
ylayer and there is the Mg of Mg of the second concentration
xn
ythe structure of layer repeatedly stacking, the first concentration is greater than the second concentration.
Diffusion impervious layer can comprise wherein Mg
xn
ythe structure of layer and GaN layer repeatedly stacking.
Diffusion impervious layer has the thickness of 0.3nm-5nm.
GaN can comprise Mg.
Luminaire may further include setting p-type electrode on the diffusion barrier, and wherein this p-type electrode can form ohmic contact with diffusion impervious layer.
According to the embodiment of disclosed technology, p-type alloy can be prevented from p-type nitride semiconductor layer to outdiffusion, thus avoid the rising of the contact resistance of p-type nitride semiconductor layer.
In addition, owing to can provide according to the growing method of the p-type nitride semiconductor layer of disclosed technology and the luminaire that utilizes the method to manufacture, comprise the p-type nitride with low contact resistance according to the luminaire of disclosed technology, and low forward voltage and high luminous efficiency can be had thus.
Accompanying drawing explanation
Fig. 1 illustrates that Mg is to the schematic diagram of outdiffusion in the typical technique of growth p-type nitride semiconductor layer.
Fig. 2 and Fig. 3 is the profile of the example fabrication method of the luminaire illustrated according to embodiments more of the present utility model.
Fig. 4 is the schematic diagram of the exemplary diffusion impervious layer illustrated according to an embodiment of the present utility model.
Fig. 5 is the flow chart illustrated according to the p-type nitride semiconductor layer of an embodiment of the present utility model and the Exemplary growth method of diffusion impervious layer.
Fig. 6 to Figure 11 is the flow chart illustrated according to the p-type nitride semiconductor layer of other embodiments of the utility model and the Exemplary growth method of diffusion impervious layer.
Embodiment
Below, the illustrative embodiments of disclosed technology is described with reference to the accompanying drawings in detail.It should be understood that and provide following embodiments to be intended to the example helping to understand disclosed technology.Thus, will be appreciated that, disclosed technology is not limited to following embodiments and can provides in a different manner.In addition, it should be noted that these accompanying drawings do not have precise proportions, and some size (such as width, length, thickness etc.) object that can describe for convenience and being exaggerated.Will be appreciated that, when element (such as layer, film, region or substrate) be referred to as be formed at, be put in or be placed in another element " top " or " on " time, it directly can be formed at, is put in or is placed on this another element, also can there is intermediary element.In whole specification, similar parts will be marked by similar Reference numeral.
When adulterating to p-type nitride semiconductor layer in the growth chamber with hydrogen environment with Mg, the dangling bonds of Mg is combined with protium, and this can destroy Mg effect as p-type impurity in nitride semiconductor layer.Therefore, the doping content of Mg can not reach aspiration level.In order to overcome this problem, disclosed US2007/007465 U. S. application describes a kind ofly discharges growth chamber by hydrogen and the method for annealing to p-type nitride semiconductor layer.
In addition, surface and the p-type electrode of p-type nitride semiconductor layer form ohmic contact, and the surface p-type impurity of p-type nitride semiconductor layer carries out excessive doping (such as doping content is 10 times of the doping content of p-type nitride-based semiconductor inside).After the growth of semiconductor layer completes, in the inside of cooling chamber or during annealing to p-type nitride semiconductor layer, due to the difference of Mg concentration between chamber interior and p-type nitride semiconductor layer, Mg spreads.In other words, Mg is diffused into chamber interior from p-type nitride semiconductor layer, and this causes the contact resistance between p-type nitride semiconductor layer and p-type electrode to become large.
When contact resistance between p-type nitride semiconductor layer and p-type electrode becomes large, the forward voltage of prepared luminaire becomes large.In addition, the increase of contact resistance also can cause the deterioration of luminous efficiency.Therefore, need a kind of manufacture method or new structure, its increase that the contact resistance of p-type nitride semiconductor layer in manufacture process can be prevented possible.
In embodiment of the present utility model, nitride semiconductor layer can grow in growth chamber.In some embodiments, nitride semiconductor layer can be formed in metal organic chemical vapor deposition (MOCVD) chamber.Therefore, growth conditions as described below may be used for the situation utilizing MOCVD growing nitride semiconductor layer.But will be appreciated that, the utility model is not limited thereto, and therefore can also comprise the situation utilizing molecular beam epitaxy (MBE), hydride gas-phase epitaxy (HVPE) or similar approach growing nitride semiconductor.
Fig. 2 and Fig. 3 is the profile of the example fabrication method of the luminaire illustrated according to embodiments more of the present utility model.
See Fig. 2, growing n-type nitride semiconductor layer 131, active layer 133 and p-type nitride semiconductor layer 135 in growth substrates 110.In addition, in some embodiments, before growing n-type nitride semiconductor layer 131, resilient coating 120 can be formed in growth substrates 110.
Growth substrates 110 is unrestricted, as long as nitride semiconductor layer can grow over the substrate, and can comprise dielectric substrate or conductive substrates.Growth substrates 110 can be or comprise such as Sapphire Substrate, patterned Sapphire Substrate (PSS), silicon substrate, silicon carbide substrates, aluminium nitride substrate or gallium nitride substrate.
Growth substrates 110 is loaded in growth chamber, and chamber interior can be heated to predetermined temperature.Chamber interior temperature can carry out various adjustment according to the growth conditions of nitride semiconductor layer, and this will be discussed in more detail below.
Resilient coating 120 can be grown in growth substrates 110 at relatively low temperatures.Such as, resilient coating 120 can grow at the temperature of about 500 DEG C of-Yue 600 DEG C.Resilient coating 120 can serve as core layer, and it allows semiconductor layer to grow into monocrystal in subsequent technique.In addition, resilient coating may be used for discharging the pressure that caused by the lattice mismatch between the semiconductor layer grown in subsequent technique and growth substrates 110 and strain.
Resilient coating 120 can comprise nitride-based semiconductor, such as, and at least one in AlGaN, AlN or GaN.
N-type nitride semiconductor layer 131 can grow in growth substrates 110.N-type nitride semiconductor layer 131 can comprise such as nitride-based semiconductor and the N-shaped alloy of (Al, Ga, In) N.N-shaped nitride-based semiconductor 131 can comprise the layer grown by III element source, V group element source and N-shaped alloy predecessor being introduced chamber at about 900 DEG C of-Yue 1100 DEG C.Now, N-shaped alloy can be or comprise Si.
In addition, n-type nitride semiconductor layer 131 can comprise single or multiple lift, or can comprise superlattice layer.
Active layer 133 can grow in n-type nitride semiconductor layer 131, and can comprise nitride-based semiconductor, such as (Al, Ga, In) N.In addition, active layer can have Multiple Quantum Well (MQW) structure comprising multiple barrier layer and multiple well layer.Now, form the semiconductor layer forming element of multi-quantum pit structure and composition thereof can be adjusted to and semiconductor layer is sent there is the light expecting peak wavelength.
P-type nitride semiconductor layer 135 can grow on active layer 133, and comprises nitride-based semiconductor and the p-type alloy of such as (Al, Ga, In) N.
P-type semiconductor layer 135 can grow by a first temperature III element source, V group element source and p-type alloy predecessor being introduced chamber.Now, the first temperature can between about 900 DEG C of-Yue 1100 DEG C; TMGa can be used as III element source; NH
3v group element source can be used as; Cp
2mg can be used as p-type dopant source; N
2, H
2or wherein N
2and H
2the gas carrying out mixing according to predetermined ratio can be used as carrier gas.But will be appreciated that, the utility model is not limited thereto and can has other execution modes.
Then, when the growth of p-type nitride semiconductor layer 135 completes, chamber interior can be cooled the growth of p-type nitride semiconductor layer 135.Now, cooling chamber inside can comprise and is cooled to the second temperature from the first temperature, and p-type alloy can be kept during cooling chamber inside to introduce chamber.Second temperature can greater than or equal to the temperature making the key of hydrogen and p-type alloy divide, and can be such as 400 DEG C or higher temperature.In other words, after the growth of p-type nitride semiconductor layer 135 completes, cooling chamber is inner, keeps introducing p-type alloy simultaneously, therefore can prevent p-type alloy from p-type nitride semiconductor layer 135 to outdiffusion.In addition, during cooling procedure, diffusion impervious layer 140 can be formed on the upper surface of p-type nitride semiconductor layer 135.
Below, the growing method of p-type nitride semiconductor layer 135 and diffusion impervious layer 140 is described in detail with reference to Fig. 3 to Fig. 5.According to this embodiment, Mg is used as p-type alloy, N
2gas is used as carrier gas.But will be appreciated that, the utility model is not limited thereto, any element of nitride semiconductor layer imparting p-type conductivity of can giving except Mg all can be used as p-type alloy, and except N
2outside any inert gas also all can be used as carrier gas.
Fig. 5 describes the growing method of p-type nitride semiconductor layer and diffusion impervious layer.With reference to Fig. 5, after chamber interior temperature is set as the first temperature, III element source, V group element source, Mg and N
2gas is introduced in chamber to grow p-type nitride semiconductor layer 135.Then, stop III element source to introduce chamber, then chamber interior is cooled to the second temperature, keeps Mg to introduce chamber in the given time simultaneously.Now, at N
2be introduced into separately to destroy the key of Mg and hydrogen as carrier gas after, chamber interior is further cooled from the second temperature.In some embodiments, chamber interior can remain on the second temperature in the given time.In addition, can at least in the introducing keeping V group element source from the first temperature in the whole cooling procedure of the second temperature.Therefore, Mg can be prevented to be diffused into chamber from p-type nitride semiconductor layer 135.
When forming diffusion impervious layer, the introducing flow velocity of Mg source and carrier gas can greater than or equal to Mg during growth p-type nitride semiconductor layer and the introducing flow velocity of carrier gas, this introducing flow velocity can start to reduce from the first temperature to the time point the cooling of the second temperature, or reduces during chamber interior can being maintained the second temperature after cooling completes.
Correspondingly, as shown in Figure 3, the Mg in chamber and V group element source are deposited on p-type nitride semiconductor layer 135 to form diffusion impervious layer 140.Therefore, diffusion impervious layer 140 can comprise Mg or Mg
xn
yin at least one, it depends on the introducing flow velocity whether introducing V group element source and V group element source.Diffusion impervious layer 140 can grow when chamber interior is cooled to the second temperature from the first temperature and/or when chamber interior maintains the second temperature.
Diffusion impervious layer 140 is formed on p-type nitride semiconductor layer 135, and can more effectively stop Mg to be diffused into chamber from p-type nitride semiconductor layer 135 thus.Such as, as shown in Figure 4, Mg and/or Mg is comprised
xn
ydiffusion impervious layer 140 be formed on the surface of p-type nitride semiconductor layer 135, the Mg therefore comprised in p-type nitride semiconductor layer 135 can be effectively prevented to be diffused in chamber 210.
Diffusion impervious layer 140 can have the thickness that about 0.3nm-is about 5nm, makes to be formed on diffusion impervious layer 140 rising that p-type electrode can not cause contact resistance.In addition, diffusion impervious layer 140 can comprise the Mg for conducting metal, and/or is the Mg of conductive nitride
xn
y, to form ohmic contact with p-type electrode.Therefore, the rising of the forward voltage of the luminaire manufactured by the growing method of the p-type nitride semiconductor layer 135 according to the utility model embodiment can be prevented.
Although the example being Mg by wherein p-type alloy is in this embodiment described the method, will be appreciated that, the utility model is not limited thereto, and comprises the situation wherein using other p-type alloys.
In addition, after chamber interior being maintained the second temperature scheduled time, chamber interior can be cooled to room temperature to complete the manufacture of p-type nitride semiconductor layer 135.
Hereinafter, the growing method of the p-type nitride semiconductor layer 135 according to the utility model embodiment is described in more detail with reference to Fig. 6 to Figure 11.
Fig. 6 describes the Exemplary growth method of the p-type nitride semiconductor layer 135 according to embodiments more of the present utility model.
See Fig. 6, growth p-type nitride semiconductor layer 135 can be included in first to five-stage (S1-S5) period growth p-type nitride semiconductor layer 135.Now, first can carry out for the first to the 5th time period (T1-T5) respectively to five-stage (S1-S5).First to five-stage (S1-S5) period, chamber interior pressure can between 200Torr-400Torr.
In the first stage (S1), III element source, Mg source, V group element source and environmental gas be directed in growth chamber to grow p-type nitride semiconductor layer at a first temperature within the T1 time period.Now, in some embodiments, III element source can comprise TMGa or TEGa, and Mg source can comprise Cp
2mg, V group element source can comprise NH
3, environmental gas can comprise H
2and N
2.
Such as, at first stage (S1), TEGa, the about 200sccm of about 130sccm to about 160sccm are to the Cp of about 300sccm
2the NH of Mg, about 40slm to 60slm
3, about 40slm to 70slm N
2, and about 150slm to the H of about 180slm
2can be introduced in growth chamber within the T1 time period, chamber interior be maintained about 900 DEG C to about 1200 DEG C to grow p-type nitride semiconductor layer simultaneously.Correspondingly, p-type nitride semiconductor layer can grown one-tenth p-GaN layer.In some embodiments, when TMGa is used as III element source, TMGa can be introduced in growth chamber under the flow velocity of about 30sccm to about 50sccm.Can according to the expectation thickness adjustment T1 of P-GaN layer.
Then, in second stage (S2), then source and environmental gas are incorporated in growth chamber by (S1) first stage, keep roughly the same with the first stage of growth temperature simultaneously, wherein only have the increase of the flow velocity in Mg source to grow P
+type nitride semiconductor layer.In other words, in second stage (S2), by increasing the flow velocity in Mg source, the flow velocity of III element source, V group element source and environmental gas is remained on the level identical with the first stage (S1) simultaneously, the p+ type nitride semiconductor layer that its doping content is higher than p-type nitride semiconductor layer can be grown.Therefore, the p-type nitride semiconductor layer 135 comprising p-type nitride semiconductor layer and p+ type nitride semiconductor layer can be formed.P-type nitride semiconductor layer grows p+ type nitride semiconductor layer and can reduce contact resistance between p-type electrode and p-type nitride semiconductor layer 135.
Such as, in second stage (S2), TEGa, the about 400sccm of about 130sccm to about 160sccm are to the Cp of about 600sccm
2the NH of Mg, about 40slm to 60slm
3, about 40slm to 70slm N
2, about 150slm to the H of about 180slm
2be introduced in 3 minutes in growth chamber, chamber interior maintained about 900 DEG C to about 1200 DEG C simultaneously, thus growth p+ type nitride semiconductor layer.Correspondingly, p+ type nitride semiconductor layer can grown one-tenth p+-GaN layer.On the other hand, when TMGa is used as III element source, TMGa can be introduced in growth chamber under the flow velocity of about 30sccm to about 50sccm.
In addition, grow wherein in the second stage (S2) of p+ type nitride semiconductor layer, In source (such as TMIn or TEIn) can be introduced in growth chamber further.Such as, TMIn can be incorporated in growth chamber further under the flow velocity of about 400sccm to about 500sccm.Correspondingly, p+ type nitride semiconductor layer can grown one-tenth p+-InGaN layer.
Then, in the phase III (S3), supply III element source and V group element source can be stopped; The composition of environmental gas can change; Growth temperature can reduce; And the flow velocity in Mg source can reduce.Compared with the flow velocity in the Mg source in second stage (S2), the flow velocity in Mg source can reduce about 10%-about 30%, and the phase III (S3) can continue the T2 time period.Correspondingly, the growth of p+ type nitride semiconductor layer can be stopped.
Such as, in the phase III (S3), chamber interior is cooled to about 700 DEG C of-Yue 850 DEG C within about 45 seconds.Now, before the phase III, (S3) started, stop supply III element source, V group element source and H
2.In addition, in the phase III (S3), the flow velocity in Mg source is reduced to about 300sccm-and is about 500sccm, N
2flow velocity be promoted to about 160slm-and be about 170slm.Correspondingly, the growth of p+-GaN layer can be stopped.
Then, at fourth stage (S4), at least within a period of time by Mg source and N
2be incorporated in growth chamber, chamber maintained the T4 time period at phase III (T3) the middle temperature declined simultaneously.Being incorporated in growth chamber in Mg source within least a period of time to stop Mg from p+ type nitride semiconductor layer to outdiffusion.In addition, containing Mg and/or Mg
xn
ydiffusion impervious layer 140 can be formed on p+ type nitride semiconductor layer.In other words, diffusion impervious layer 140 can be formed on p-type nitride semiconductor layer 135 by this situ heat treatment.
Such as, in fourth stage (S4), growth chamber inside is maintained at about 700 DEG C of-Yue 850 DEG C.In addition, in fourth stage (S4), the flow velocity in Mg source is maintained at about 300sccm-and is about 500sccm, N
2flow velocity be maintained at about 160slm-and be about 170slm.Correspondingly, Mg and/or Mg is comprised
xn
ydiffusion impervious layer 140 can be formed.Now, Mg source can be introduced continuously in fourth stage (S4) period.But can recognize, the utility model is not limited thereto, and as replacing, only Mg source can be introduced within a period of time.In addition, the flow velocity in Mg source is not limited thereto, and the flow velocity in the Mg source of introducing in can being less than or equal to the first stage (S1).
Then, at five-stage (S5), after Mg source is introduced in stopping, chamber interior is at N
2be cooled to 500 DEG C-600 DEG C under environment, and keep the T5 time period (such as about 5 minutes) at such a temperature.
Fig. 7 describes the Exemplary growth method of diffusion impervious layer 140 according to embodiments more of the present utility model and p-type nitride semiconductor layer 135.
Although be substantially similar to the embodiment in Fig. 6, but the difference of the embodiment in the embodiment in Fig. 7 and Fig. 6 is, after second stage (S2), do not stop V group element source to be fed in growth chamber, but continue supply in the third and fourth stage (S3 and S4).Only different piece will be described below and the description of will omit same characteristic features.
See Fig. 7, in second stage (S2), V group element source is introduced in growth chamber under the first flow velocity; In the phase III (S3), the flow velocity in V group element source is reduced to second flow velocity lower than the first flow velocity; And in fourth stage (S4), V group element source is introduced in growth chamber under the second flow velocity.Now, the second flow velocity can about 10%-30% lower than the first flow velocity.
Such as, NH
3v group element source can be used as; In second stage (S2), NH
3be introduced in be about the flow velocity of 60slm at about 40slm-under in growth chamber; In the phase III (S3), NH
3flow velocity be reduced to about 30slm-and be about 50slm; And in fourth stage (S4), NH
3flow velocity be maintained at about 30slm-and be about 50slm.Correspondingly, can be formed containing Mg
xn
ydiffusion impervious layer 140, and this diffusion impervious layer can have the magnesium nitride percentage higher than the embodiment in Fig. 5.
Containing Mg
xn
ydiffusion impervious layer 140 Mg can be stoped to outdiffusion, Mg
xn
ycan tunnel layer be formed, thus reduce the contact resistance of diffusion impervious layer 140.
Fig. 8 describes the Exemplary growth method of diffusion impervious layer 140 according to embodiments more of the present utility model and p-type nitride semiconductor layer 135.
Although be substantially similar to the embodiment in Fig. 7, the difference of the embodiment in Fig. 8 and the embodiment in Fig. 7 is, in fourth stage (S4), Mg supplies in source in a pulsed mode.Only different piece will be described below and the description of will omit same characteristic features.
See Fig. 8, in fourth stage (S4), Mg source can be introduced in growth chamber under multi-pulse mode.Specifically, such as, can to repeat Cp in an alternating fashion under about 400sccm-is about the flow velocity of 600sccm within the scheduled time (such as about 1 minute)
2mg introduces growth chamber and suspends supply Cp
2the Mg scheduled time (such as about 1 minute).Therefore, Cp
2the introducing flow velocity of Mg can be rendered as the form of square wave, as shown in Figure 8.Now, wherein Cp
2it can be 3 to 7 that the introducing of Mg and supply suspend the loop number repeating to occur.
Even if suspend in fourth stage (S4) and introduce Cp
2during Mg, the Mg with relatively low Mg concentration can be formed by the Mg source residued in growth chamber
xn
ylayer.Correspondingly, at introducing Cp
2during Mg, the Mg of the rich Mg with relatively high Mg concentration can be grown
xn
ylayer, but, at time-out supply Cp
2during Mg, the Mg of the poor Mg with relatively low Mg concentration can be grown
xn
ylayer.Therefore, diffusion impervious layer 140 can comprise the Mg of the rich Mg wherein with relatively high Mg concentration
xn
ylayer and the Mg of poor Mg with relative low Mg concentration
xn
ythe structure of layer repeatedly stacking in an alternating manner.This multilayer structured diffusion impervious layer 140 can effectively stop further Mg to outdiffusion.
In addition, by the Mg of the rich Mg of repeatedly stacking
xn
ythe Mg of layer and poor Mg
xn
ylayer, can prevent Mg because of tunnel effect
xn
ylayer completely blanket p-type semiconductor layer 135 and cause the deterioration of ohmic contact characteristic, thus the rising avoiding the contact resistance caused because of diffusion impervious layer 140.
Fig. 9 describes the Exemplary growth method of diffusion impervious layer 140 according to embodiments more of the present utility model and p-type nitride semiconductor layer 135.
Although be substantially similar to the embodiment in Fig. 8, the difference of the embodiment in Fig. 9 and the embodiment in Fig. 8 is, in fourth stage (S4), III element source is incorporated into further in growth chamber during the time-out supply in Mg source.Only different piece will be described below and the description of will omit same characteristic features.
See Fig. 9, in fourth stage (S4), Mg source and III element source can be introduced in growth chamber under multi-pulse mode.In addition, Mg source and III element source can alternately be introduced in growth chamber.
Such as, Cp
2mg and TEGa can be introduced in growth chamber respectively as Mg source and III element source.Can to repeat Cp under about 400sccm-is about the flow velocity of 600sccm within the scheduled time (such as about 1 minute)
2mg introduces growth chamber and within the scheduled time (such as about 1 minute), suspends supply Cp
2mg.Similarly, can repeat under about 130sccm-is about the flow velocity of 160sccm, TEGa is introduced growth chamber within the scheduled time (such as about 1 minute) and within the scheduled time (such as about 1 minute), suspends supply TEGa.Therefore, Cp
2the introducing flow velocity of Mg and TEGa can be rendered as the form of square wave, as shown in figure 9.Now, the introducing of TEGa can at Cp
2suspend between the introductory phase of Mg, vice versa.
In this embodiment, although by wherein reducing the Cp as p-type dopant source
2mg and the NH as group V source gas
3flow velocity after the method is described to the example that growth chamber cools, but the utility model is not limited to this, and can have other execution modes.As replacement, Cp
2mg and NH
3flow velocity can be identical with during growth p-type semiconductor layer, or 30% or more can be reduced.
Correspondingly, can at introducing Cp
2mg is grown during Mg
xn
ylayer, and can introducing TEGa during growing GaN layer.Therefore, diffusion impervious layer 140 can comprise wherein Mg
xn
ythe structure of layer and GaN layer repeatedly stacking.Now, Mg
xn
ylayer and GaN layer in each can comprise or be made up of individual layer.In addition, GaN layer may further include the Mg that remains in growth chamber to be doping to p-type.
Because diffusion impervious layer 140 comprises above-mentioned repeatedly stacking structure, therefore can effectively prevent Mg to outdiffusion further.In addition, by repeatedly stacking Mg
xn
ylayer and GaN layer, can prevent Mg because of tunnel effect
xn
ylayer completely blanket p-type semiconductor layer 135 and cause ohmic contact characteristic (Mg thus
xn
ythe saturation of layer) deterioration, thus avoid the rising of the contact resistance caused because of diffusion impervious layer 140.In addition, by repeatedly stacking Mg
xn
ylayer and GaN layer, can strengthen tunnel effect, thus reduce the contact resistance between p-type nitride semiconductor layer and p-type electrode.
Figure 10 describes the Exemplary growth method of diffusion impervious layer 140 according to embodiments more of the present utility model and p-type nitride semiconductor layer 135.
Although be substantially similar to the embodiment in Fig. 6, but the difference of the embodiment in the embodiment in Figure 10 and Fig. 6 is, the flow velocity in Mg source is not reduced in the phase III (S3), and the supply of III element source does not stop after second stage (S2), but along with the time is dull or reduce gradually.Only different piece will be described below and the description of will omit same characteristic features.
See Figure 10, in the second to fourth stage (S2-S4) period, with substantially invariable flow velocity, Mg source is incorporated in growth chamber.Such as, about 400sccm-is about the Cp of 600sccm
2mg can be introduced in growth chamber within the scheduled time (such as T2-T3 time period).Such as, according to this embodiment, in three to fourth stage (S3-S4) period, III element source can be introduced in growth chamber within least a period of time.In addition, in three to fourth stage (S3-S4) period, the flow velocity being incorporated into the III element source in growth chamber can be dull or reduce gradually.Such as, as shown in Figure 10, TEGa (and/or TMGa) can be introduced in growth chamber in T2 and the T3 time period as III element source in the third and fourth stage (S3 and S4), and wherein the introducing flow velocity of III element source can diminish with constant decrease speed in time.But, the situation that the flow velocity of III element source is not limited to dullness or reduces gradually.As replacement, the introducing flow velocity of III element source can decline according to the decrease speed of change within least a period of time.
Like this, the flow velocity reducing III element source while introducing in growth chamber with substantially invariable flow velocity by Mg source can cause Mg in diffusion impervious layer 140
xn
yformation.Correspondingly, the possibility of Mg to outdiffusion can be reduced, and reduce the contact resistance of diffusion impervious layer 140.
Figure 11 describes the Exemplary growth method of diffusion impervious layer 140 according to embodiments more of the present utility model and p-type nitride semiconductor layer 135.
Although be substantially similar to the embodiment in Figure 10, the difference of the embodiment in Figure 11 and the embodiment in Figure 10 is, III element source is introduced in growth chamber under multi-pulse mode.Only different piece will be described below and the description of will omit same characteristic features.
See Figure 11, in the second to fourth stage (S2-S4) period, with substantially invariable flow velocity, Mg source is incorporated in growth chamber.Such as, about 400sccm-is about the Cp of 600sccm
2mg can be introduced in growth chamber within the scheduled time (such as T2-T3 time period).According to this embodiment, in three to fourth stage (S3-S4) period, III element source can be introduced in growth chamber within least a period of time.Such as, in three to fourth stage (S3-S4) period, III element source can be supplied under multi-pulse mode.In addition, follow-up pulse can have than prepulse shorter duration.Such as, as shown in figure 11, TEGa (and/or TMGa) can be introduced in growth chamber as III element source under multi-pulse mode, wherein follow-up pulse can have than prepulse shorter duration.Therefore, under multi-pulse mode, the duration of each pulse can diminish along with the time.The supply frequency of pulse is unrestricted.In addition, the flow velocity of III element source can be constant or change for each pulse.
Like this, III element source is introduced in growth chamber under multi-pulse mode, and the duration of wherein each pulse can diminish, and is incorporated in growth chamber in Mg source with substantially invariable flow velocity simultaneously.As described above these sources are fed in growth chamber, thus cause Mg in diffusion impervious layer 140
xn
yformation.Such as, the pulse duration of supply III element source diminishes, thus Mg
xn
ycan be formed in the upper area of diffusion impervious layer 140 with relatively high density.Correspondingly, the possibility of Mg to outdiffusion can be reduced, and reduce the contact resistance of diffusion impervious layer 140.
Refer again to Fig. 3, utilize this manufacture method of p-type nitride semiconductor layer 135 can provide a kind of luminaire comprising structure shown in Fig. 3.
This luminaire can comprise n-type nitride semiconductor layer 131, active layer 133, p-type nitride semiconductor layer 135, and diffusion impervious layer 140.In addition, this luminaire may further include p-type electrode (not shown), and it to be arranged on diffusion impervious layer 140 and to form ohmic contact with diffusion impervious layer 140.
Luminaire is unrestricted in its structure or configuration.Such as, the structure according to p-type nitride-based semiconductor 135 of the present utility model and diffusion impervious layer 140 can be applied on various luminaire, such as vertical-type, horizontal type or flip chip type luminaire.Growth substrates 110 can be omitted, and can use the known technology do not described herein as required.
According to the growing method of p-type nitride semiconductor layer of the present utility model and utilize it to manufacture luminaire in, the rising of the contact resistance between p-type electrode and p-type nitride semiconductor layer can be prevented.Correspondingly, the rising of the forward voltage of luminaire can be prevented, avoid the deterioration of the luminous efficiency caused because contact resistance raises simultaneously.
In addition, the growing method of p-type nitride semiconductor layer can only by maintaining introducing p-type alloy in growth course without the need to independently source gas or additional procedure just obtain sizable effect.Therefore, a kind of luminaire with good forward voltage characteristic can be provided when not carrying out substantial modification to typical luminaire manufacturing process.
Will be appreciated that, the utility model is not limited to above-described embodiment and feature, can carry out various modifications and variations, and not deviate from the scope of the present utility model proposed by claim.
Claims (8)
1. a luminaire, is characterized in that, described luminaire comprises:
N-type nitride semiconductor layer;
Be arranged on the active layer in n-type nitride semiconductor layer;
Be arranged on the p-type nitride semiconductor layer on active layer; And
Be arranged on the diffusion impervious layer on p-type nitride semiconductor layer.
2. luminaire as claimed in claim 1, it is characterized in that, diffusion impervious layer comprises p-type alloy.
3. luminaire as claimed in claim 2, it is characterized in that, p-type alloy is Mg, and diffusion impervious layer comprises Mg
xn
ylayer.
4. luminaire as claimed in claim 3, it is characterized in that, diffusion impervious layer comprises the Mg of the Mg wherein with the first concentration
xn
ylayer and there is the Mg of Mg of the second concentration
xn
ythe structure of layer repeatedly stacking, the first concentration is greater than the second concentration.
5. luminaire as claimed in claim 3, it is characterized in that, diffusion impervious layer comprises wherein Mg
xn
ythe structure of layer and GaN layer repeatedly stacking.
6. luminaire as claimed in claim 3, it is characterized in that, diffusion impervious layer has the thickness of 0.3nm-5nm.
7. luminaire as claimed in claim 5, it is characterized in that, GaN layer comprises Mg.
8. luminaire as claimed in claim 1, it is characterized in that, described luminaire comprises further:
P-type electrode is on the diffusion barrier set,
Wherein this p-type electrode and diffusion impervious layer form ohmic contact.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2014-0060231 | 2014-05-20 | ||
| KR20140060231 | 2014-05-20 | ||
| KR10-2014-0129305 | 2014-09-26 | ||
| KR1020140129305A KR20150133622A (en) | 2014-05-20 | 2014-09-26 | Light emitting device and method of fabricating the same |
| KR1020140193540A KR20150133628A (en) | 2014-05-20 | 2014-12-30 | Light emitting device and method of fabricating the same |
| KR10-2014-0193540 | 2014-12-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204927320U true CN204927320U (en) | 2015-12-30 |
Family
ID=54868055
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520328294.0U Expired - Fee Related CN204927320U (en) | 2014-05-20 | 2015-05-20 | Light -emitting apparatus |
Country Status (2)
| Country | Link |
|---|---|
| KR (2) | KR20150133622A (en) |
| CN (1) | CN204927320U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105098001A (en) * | 2014-05-20 | 2015-11-25 | 首尔伟傲世有限公司 | Light emitting device and method of fabricating the same |
-
2014
- 2014-09-26 KR KR1020140129305A patent/KR20150133622A/en unknown
- 2014-12-30 KR KR1020140193540A patent/KR20150133628A/en not_active Application Discontinuation
-
2015
- 2015-05-20 CN CN201520328294.0U patent/CN204927320U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105098001A (en) * | 2014-05-20 | 2015-11-25 | 首尔伟傲世有限公司 | Light emitting device and method of fabricating the same |
| CN105098001B (en) * | 2014-05-20 | 2019-02-01 | 首尔伟傲世有限公司 | Luminaire and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150133628A (en) | 2015-11-30 |
| KR20150133622A (en) | 2015-11-30 |
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