CN204905281U - Encapsulation of semiconductor luminescence chip level - Google Patents

Encapsulation of semiconductor luminescence chip level Download PDF

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Publication number
CN204905281U
CN204905281U CN201520513632.8U CN201520513632U CN204905281U CN 204905281 U CN204905281 U CN 204905281U CN 201520513632 U CN201520513632 U CN 201520513632U CN 204905281 U CN204905281 U CN 204905281U
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China
Prior art keywords
array structure
covering
epitaxial loayer
type surface
shows
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CN201520513632.8U
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Chinese (zh)
Inventor
彭晖
眭世荣
黄映仪
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New Light Sources Re-Invent Industry Center Associating Guangdong Nanhai District Foshan City
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New Light Sources Re-Invent Industry Center Associating Guangdong Nanhai District Foshan City
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Priority to CN201520513632.8U priority Critical patent/CN204905281U/en
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Abstract

The utility model discloses an encapsulation of semiconductor luminescence chip level, include luminous epitaxial layer of at least one semiconductor and covering. Wherein, the luminous epitaxial layer of semiconductor includes first epitaxial layer, luminescent layer and second epitaxial layer for the luminous epitaxial layer of semiconductor is luminous after the circular telegram. The covering covers on the first epitaxial layer of the luminous epitaxial layer of semiconductor to cover four sides of the luminous epitaxial layer of semiconductor. A metal electrode forms on first epitaxial layer, and the 2nd metal electrode forms on the second epitaxial layer. A metal electrode and the 2nd metal electrode are on with the one side. The covering has individual layer or multilayer structure.

Description

Semiconductor luminous chip level encapsulates
Technical field
The utility model relates to the encapsulation of semiconductor luminous chip level.
Background technology
One of method of quick reduction LED illumination luminescent system cost adopts wafer-level package.But the light extraction efficiency of existing semiconductor luminous chip level encapsulation is lower.Therefore, need to improve light extraction efficiency.
Utility model content
The purpose of this utility model and the beneficial effect reached are to provide the semiconductor luminous chip level encapsulation that can improve light extraction efficiency.Hereinafter, the encapsulation of semiconductor luminous chip level is called for short wafer-level package (ChipScalePackage, abbreviation: CSP).
An embodiment of wafer-level package of the present utility model: a kind of semiconductor luminous chip level encapsulation, is characterized in that, the encapsulation of semiconductor luminous chip level comprises, at least one semiconductor epitaxial layers and covering; Wherein, epitaxial loayer comprises the first epitaxial loayer, luminescent layer and the second epitaxial loayer, makes epitaxial loayer luminous after powered up; Covering covers on the first epitaxial loayer of institute's epitaxial loayer, and covers four sides of epitaxial loayer; First metal electrode is formed on the first epitaxial layer, and the second metal electrode is formed on the second epitaxial loayer; First metal electrode and the second metal electrode are on the same face of epitaxial loayer; Covering has single or multiple lift structure.
An embodiment of wafer-level package of the present utility model: the surface that the first epitaxial loayer contacts with covering is with alligatoring structure.The alligatoring structure on the surface of the first epitaxial loayer selects from one group of alligatoring structure, and this group alligatoring structure comprises: the pyramid array structure that (1) is raised to covering direction from the surface of the first epitaxial loayer; (2) raised to covering direction from the surface of the first epitaxial loayer conical array array structure; (3) raised to covering direction from the surface of the first epitaxial loayer cylindrical-array structure; (4) raised to covering direction from the surface of the first epitaxial loayer part sphere array structure; (5) from the tapered array structure of the polyhedron that the surface of the first epitaxial loayer is raised to covering direction; (6) raised from the surface of the first epitaxial loayer to covering direction irregular tip array structure; (7) the pyramid array structure internally caved in from the surface of the first epitaxial loayer; (8) the conical array array structure internally caved in from the surface of the first epitaxial loayer; (9) the cylindrical-array structure internally caved in from the surface of the first epitaxial loayer; (10) the part sphere array structure internally caved in from the surface of the first epitaxial loayer; (11) the tapered array structure of polyhedron internally caved in from the surface of the first epitaxial loayer; (12) the irregular tip array structure internally caved in from the surface of the first epitaxial loayer.
An embodiment of wafer-level package of the present utility model: the surface of covering is with alligatoring structure.The alligatoring structure on the surface of covering selects from one group of alligatoring structure, and this group alligatoring structure comprises: (1) is from the pyramid array structure of the outwardly portion projection of covering; (2) from the conical array array structure of the outwardly portion projection of covering; (3) from the cylindrical-array structure of the outwardly portion projection of covering; (4) from the part sphere array structure of the outwardly portion projection of covering; (5) from the tapered array structure of polyhedron of the outwardly portion projection of covering; (6) from the irregular tip array structure of the outwardly portion projection of covering; (7) the pyramid array structure internally caved in from the surface of covering; (8) the conical array array structure internally caved in from the surface of covering; (9) the cylindrical-array structure internally caved in from the surface of covering; (10) the part sphere array structure internally caved in from the surface of covering; (11) the tapered array structure of polyhedron internally caved in from the surface of covering; (12) the irregular tip array structure internally caved in from the surface of covering.
An embodiment of wafer-level package of the present utility model: the material of every one deck of covering selects from one group of material, and this group material comprises: quantum dot, transparency material, be mixed with fluorescent material transparency material, be mixed with phosphor powder transparency material, be mixed with the transparency material of fluorescent material and phosphor powder and be mixed with the transparency material of quantum dot.Transparency material selects from one group of material, and this group material comprises: silica gel, resin, epoxy resin, silica, silicon nitride, silicon-on-glass, polyimides, glass, polymethyl methacrylate, acrylic acid; The transparency material being mixed with fluorescent material selects from one group of material, and this group material comprises: silica gel, resin, epoxy resin, silica, silicon nitride, silicon-on-glass, polyimides, glass, polymethyl methacrylate, acrylic acid.The transparency material being mixed with phosphor powder selects from one group of material, and this group material comprises: silica gel, resin, epoxy resin, silica, silicon nitride, silicon-on-glass, polyimides, glass, polymethyl methacrylate, acrylic acid.The transparency material being mixed with fluorescent material and phosphor powder selects from one group of material, and this group material comprises: silica gel, resin, epoxy resin, silica, silicon nitride, silicon-on-glass, polyimides, glass, polymethyl methacrylate, acrylic acid.The transparency material being mixed with quantum dot selects from one group of material, and this group material comprises: silica gel, resin, epoxy resin, silica, silicon nitride, silicon-on-glass, polyimides, glass, polymethyl methacrylate, acrylic acid.
An embodiment of wafer-level package of the present utility model: comprise transparent growth substrates lining further.Growth substrates is layered between covering and the first epitaxial loayer, and the second major surface of growth substrates is folded on the first epitaxial layer, and blanket layer is stacked on the first first type surface of growth substrates.Covering covers the first first type surface and four sides of growth substrates.
An embodiment of the wafer-level package of utility model: growth substrates comprises, sapphire, carborundum, gallium nitride, glass.
An embodiment of wafer-level package of the present utility model: the surface contacted with covering of growth substrates is with alligatoring structure; The alligatoring structure of the first first type surface of growth substrates selects from one group of alligatoring structure, and this group alligatoring structure comprises: (1) is from the first first type surface of growth substrates pyramid array structure raised to covering direction; (2) from the conical array array structure that the first first type surface of growth substrates is raised to covering direction; (3) from the cylindrical-array structure that the first first type surface of growth substrates is raised to covering direction; (4) from the part sphere array structure that the first first type surface of growth substrates is raised to covering direction; (5) from the tapered array structure of the polyhedron that the first first type surface of growth substrates is raised to covering direction; (6) raised from the first first type surface of growth substrates to covering direction irregular tip array structure; (7) from the pyramid array structure that the first first type surface of growth substrates internally caves in; (8) from the conical array array structure that the first first type surface of growth substrates internally caves in; (9) from the cylindrical-array structure that the first first type surface of growth substrates internally caves in; (10) from the part sphere array structure that the first first type surface of growth substrates internally caves in; (11) from the tapered array structure of polyhedron that the first first type surface of growth substrates internally caves in; (12) from the irregular tip array structure that the first first type surface of growth substrates internally caves in.
An embodiment of wafer-level package of the present utility model: comprise metallization further and support substrate; Support the first first type surface of substrate comprises the first electrode and the second electrode, support the second first type surface of substrate comprises the first electrode and the second electrode, the first electrode on the first first type surface and the second electrode are electrically connected with the first electrode on the second first type surface and the second electrode respectively; First metal electrode and the second metal electrode are electrically connected with the first electrode supported on the first first type surface of substrate and the second electrode respectively.
An embodiment of wafer-level package of the present utility model: metallization supports that substrate comprises, metallization silicon substrate, metallization aluminium nitride ceramics substrate, metallization silicon oxide ceramics substrate, metallization PCB substrate
An embodiment of wafer-level package of the present utility model: semiconductor luminous chip selects from one group of semiconductor luminous chip, this group semiconductor luminous chip comprises, GaN base semiconductor luminous chip, GaP based semiconductor light emitting chip, GaNP based semiconductor light emitting chip.
Accompanying drawing explanation
Fig. 1 a and Fig. 1 b shows the sectional view of the flip-chip in wafer-level package of the present utility model.
Fig. 2 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Fig. 3 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Fig. 4 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Fig. 5 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Fig. 6 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Fig. 7 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Fig. 8 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Fig. 9 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 10 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 11 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 12 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 13 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 14 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 15 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 16 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 17 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 18 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 19 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 20 shows that the sectional view of an embodiment of substrate is supported in the metallization of wafer-level package of the present utility model.
Figure 21 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 22 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 23 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 24 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 25 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 26 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 27 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 28 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 29 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 30 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 31 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 32 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 33 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 34 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 35 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 36 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 37 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 38 shows the sectional view of an embodiment of wafer-level package of the present utility model.
Figure 39 a and Figure 39 b shows the sectional view of two embodiments of the alligatoring structure of wafer-level package of the present utility model respectively.
Figure 39 c and Figure 39 d shows the vertical view of two embodiments of the alligatoring structure of wafer-level package of the present utility model respectively.
Figure 40 a and Figure 40 b shows the sectional view of two embodiments of the alligatoring structure of wafer-level package of the present utility model respectively.
Figure 40 c shows the vertical view of an embodiment of the alligatoring structure of wafer-level package of the present utility model.
Figure 41 a and Figure 41 b shows the sectional view of two embodiments of the alligatoring structure of wafer-level package of the present utility model respectively.
Figure 41 c shows the vertical view of an embodiment of the alligatoring structure of wafer-level package of the present utility model.
Figure 42 a and Figure 42 b shows the sectional view of two embodiments of the alligatoring structure of wafer-level package of the present utility model respectively.
Figure 42 c and Figure 42 d shows the vertical view of two embodiments of the alligatoring structure of wafer-level package of the present utility model respectively.
Figure 43 shows the sectional view with an embodiment of 2 layers of covering of wafer-level package of the present utility model.
The implication of the figure notation representative in figure is as follows:
1,2,3 represent the first epitaxial loayer, the second epitaxial loayer, luminescent layer respectively,
4 and 5 represent the first and second metal electrodes respectively,
11 represent the luminescence chip including the first epitaxial loayer, luminescent layer, the second epitaxial loayer,
12 and 13 represent first first type surface of the first epitaxial loayer of luminescence chip 11 and the side of luminescence chip respectively,
14,15,16 represent respectively covering, its level and smooth surface and its bottom,
24,25 and 26 represent the externally protruding alligatoring structure in covering, blanket surface and blanket surface respectively,
34,35 and 36 represent the alligatoring structure internally caved in covering, blanket surface and blanket surface respectively,
41 and 42 represent luminescence chip and its externally protruding alligatoring structure on the surface respectively,
51 and 52 represent luminescence chip and its alligatoring structure internally caved on the surface respectively,
61,62 and 63 represent transparent growth substrates, its first first type surface and side thereof respectively,
71 and 72 represent the externally protruding alligatoring structure on transparent growth substrates and its surface respectively,
81 and 82 represent the alligatoring structure internally caved on transparent growth substrates and its surface respectively,
91 and 92 represent second layer covering and its surface respectively,
The side of 93 ground floor coverings,
The bottom of 96 expression second layer coverings 91,
100 represent that substrate is supported in metallization,
101 and 111 represent the first electrode on two first type surfaces being formed in metallization support substrate 100 respectively,
102 and 112 represent the second electrode be formed on two first type surfaces supporting substrate 100 respectively,
121 and 122 represent connection two the first electrodes 101 and 111 and be connected the electric conductor of 2 the second electrodes 102 and 112 respectively,
141,151,161 represent object respectively,
142,152,162, and 172 represent the sectional view being formed in alligatoring structure upwardly on object respectively,
145,153,163, and 175 represent the alligatoring structural section figure to lower recess be formed on object respectively,
143,144,154,164,172a, 172b, 175a, and 175b represents the vertical view of the alligatoring structure upwardly with to lower recess be formed on object respectively,
173 represent the distance between two alligatoring structure 172a and 172b,
174 represent the distance between two alligatoring structure 175a and 175b.
Embodiment
For making the object of embodiment of the present utility model, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in embodiment of the present utility model, technical scheme in embodiment of the present utility model is clearly and completely described, obviously, described embodiment is a part of embodiment of the present utility model, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
Fig. 1 a shows the sectional view of an embodiment of the epitaxial loayer in wafer-level package of the present utility model.Epitaxial loayer comprises, and the first epitaxial loayer 1, luminescent layer 3 and the second epitaxial loayer 2, make epitaxial loayer luminous after powered up.First metal electrode 4 is formed on the first epitaxial loayer 1, and the second metal electrode 5 is formed on the second epitaxial loayer 2.First metal electrode 4 and the second metal electrode 5 are on the same face.First epitaxial loayer 1 has the first first type surface 12.
The sectional view of the simplification of an embodiment of the epitaxial loayer that Fig. 1 b exploded view 1a shows.In order to the picture of reduced graph 2 to Figure 19 and Figure 21 to Figure 38, no longer specifically draw the first epitaxial loayer 1, luminescent layer 3 and the second epitaxial loayer 2, but the entirety of the first epitaxial loayer 1, luminescent layer 3 and the second epitaxial loayer 2 is represented with epitaxial loayer 11.First metal electrode 4 and the second metal electrode 5 are on the same face of epitaxial loayer 11.First first type surface 12 of the first epitaxial loayer 1 is also the first first type surface of epitaxial loayer 11.Epitaxial loayer 11 has side 13.
Fig. 2 shows the sectional view of an embodiment of wafer-level package of the present utility model.Covering 14 covers the first first type surface 12 and four sides 13 of epitaxial loayer 11.Covering 14 has the first first type surface 15 and bottom 16.
Fig. 3 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Fig. 3 shows is substantially identical with the embodiment that Fig. 2 shows, difference is: the alligatoring structure 26 the first first type surface 25 of the covering 24 of the embodiment of Fig. 3 being formed externally projection.
Fig. 4 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Fig. 4 shows is substantially identical with the embodiment that Fig. 2 shows, difference is: the first first type surface 35 of the covering 34 of the embodiment of Fig. 4 forms the alligatoring structure 36 internally caved in.
Fig. 5 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Fig. 5 shows is substantially identical with the embodiment that Fig. 2 shows, difference is: the first first type surface of the epitaxial loayer 41 of the embodiment of Fig. 5 is formed the alligatoring structure 42 raised to covering direction.
Fig. 6 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Fig. 6 shows is substantially identical with the embodiment that Fig. 5 shows, difference is: the alligatoring structure 26 the first first type surface 25 of covering 24 being formed externally projection.
Fig. 7 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Fig. 7 shows is substantially identical with the embodiment that Fig. 5 shows, difference is: the first first type surface 35 of covering 34 forms the alligatoring structure 36 internally caved in.
Fig. 8 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Fig. 8 shows is substantially identical with the embodiment that Fig. 2 shows, difference is: the first first type surface of the epitaxial loayer 51 of the embodiment of Fig. 8 is formed the alligatoring structure 52 internally caved in.
Fig. 9 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Fig. 9 shows is substantially identical with the embodiment that Fig. 8 shows, difference is: the alligatoring structure 26 the first first type surface 25 of covering 24 being formed externally projection.
Figure 10 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 10 shows is substantially identical with the embodiment that Fig. 8 shows, difference is: the first first type surface 35 of covering 34 forms the alligatoring structure 36 internally caved in.
Figure 11 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 11 shows is substantially identical with the embodiment that Fig. 2 shows, difference is: the growth substrates 61 of laminating transparent between the first first type surface 12 of the epitaxial loayer 11 of the embodiment of Figure 11 and covering 14.Growth substrates 61 has the first first type surface 62 and side 63.Covering 14 covers the first first type surface 62 of growth substrates 61 and the side 13 of side 63 and chip 11.
Figure 12 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 12 shows is substantially identical with the embodiment that Figure 11 shows, difference is: the alligatoring structure 26 the first first type surface 25 of covering 24 being formed externally projection.
Figure 13 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 13 shows is substantially identical with the embodiment that Figure 11 shows, difference is: the first first type surface 35 of covering 34 forms the alligatoring structure 36 internally caved in.
Figure 14 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 14 shows is substantially identical with the embodiment that Figure 11 shows, difference is: the first first type surface of the transparent growth substrates 71 of the embodiment of Figure 14 forms the alligatoring structure 72 raised to covering direction.
Figure 15 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 15 shows is substantially identical with the embodiment that Figure 14 shows, difference is: the alligatoring structure 26 the first first type surface 25 of covering 24 being formed externally projection.
Figure 16 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 16 shows is substantially identical with the embodiment that Figure 14 shows, difference is: the first first type surface 35 of covering 34 forms the alligatoring structure 36 internally caved in.
Figure 17 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 17 shows is substantially identical with the embodiment that Figure 11 shows, difference is: the first first type surface of the transparent growth substrates 81 of the embodiment of Figure 17 forms the alligatoring structure 82 internally caved in.
Figure 18 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 18 shows is substantially identical with the embodiment that Figure 17 shows, difference is: the alligatoring structure 26 the first first type surface 25 of covering 24 being formed externally projection.
Figure 19 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 19 shows is substantially identical with the embodiment that Figure 17 shows, difference is: the first first type surface 35 of covering 34 forms the alligatoring structure 36 internally caved in.
In attention: Fig. 2 to Figure 19, covering covers the side of the first and second metal electrodes, and covering also can not cover the side of the first and second metal electrodes.
Figure 20 shows that the sectional view of an embodiment of substrate is supported in the metallization of wafer-level package of the present utility model.Second electrode 101 and 111 is respectively formed at metallization and supports that, on two first type surfaces of substrate 100, the first electrode 102 and 112 is respectively formed on two first type surfaces of support substrate 100.Second electrode 101 and 111 forms electrical connection by electric conductor 121, and the first electrode 102 and 112 forms electrical connection by electric conductor 122.
Figure 21 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 21 shows is substantially identical with the embodiment that Fig. 2 shows, difference is: with metallization, the second metal electrode 5 and the first metal electrode 4 support that the second electrode 101 of substrate 100 and the first electrode 102 are electrically connected respectively.The bottom 16 of covering 14 contacts with the surface of support substrate 100.
Figure 22 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 22 shows is substantially identical with the embodiment that Figure 21 shows, difference is: the alligatoring structure 26 the first first type surface 25 of the covering 24 of the embodiment of Figure 22 being formed externally projection.
Figure 23 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 23 shows is substantially identical with the embodiment that Figure 21 shows, difference is: the first first type surface 35 of the covering 34 of the embodiment of Figure 23 forms the alligatoring structure 36 internally caved in.
Figure 24 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 24 shows is substantially identical with the embodiment that Figure 21 shows, difference is: the first first type surface of the epitaxial loayer 41 of the embodiment of Figure 24 is formed to the raised alligatoring structure 42 in covering 14 direction.
Figure 25 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 25 shows is substantially identical with the embodiment that Figure 24 shows, difference is: the alligatoring structure 26 the first first type surface 25 of the covering 24 of the embodiment of Figure 25 being formed externally projection.
Figure 26 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 26 shows is substantially identical with the embodiment that Figure 24 shows, difference is: the first first type surface 35 of the covering 34 of the embodiment of Figure 26 forms the alligatoring structure 36 internally caved in.
Figure 27 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 27 shows is substantially identical with the embodiment that Figure 21 shows, difference is: the first first type surface of the epitaxial loayer 51 of the embodiment of Figure 27 is formed the alligatoring structure 52 internally caved in.
Figure 28 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 28 shows is substantially identical with the embodiment that Figure 27 shows, difference is: the alligatoring structure 26 the first first type surface 25 of covering 24 being formed externally projection.
Figure 29 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 29 shows is substantially identical with the embodiment that Figure 27 shows, difference is: the first first type surface 35 of covering 34 forms the alligatoring structure 36 internally caved in.
Figure 30 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 30 shows is substantially identical with the embodiment that Figure 21 shows, difference is: the growth substrates 61 of laminating transparent between the first first type surface 12 of the epitaxial loayer 11 of Figure 30 and covering 14.Growth substrates 61 has the first first type surface 62 and side 63.Covering 14 covers the first first type surface 62 and the side 63 of growth substrates 61.The bottom 16 of covering 14 contacts supports substrate 100.
Figure 31 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 31 shows is substantially identical with the embodiment that Figure 30 shows, difference is: the alligatoring structure 26 the first first type surface 25 of the covering 24 of the embodiment of Figure 31 being formed externally projection.
Figure 32 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 32 shows is substantially identical with the embodiment that Figure 30 shows, difference is: the first first type surface 35 of the covering 34 of the embodiment of Figure 32 forms the alligatoring structure 36 internally caved in.
Figure 33 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 33 shows is substantially identical with the embodiment that Figure 30 shows, difference is: the first first type surface of the transparent growth substrates 71 of the embodiment of Figure 33 is formed to the raised alligatoring structure 72 in covering 14 direction.
Figure 34 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 34 shows is substantially identical with the embodiment that Figure 33 shows, difference is: the alligatoring structure 26 the first first type surface 25 of covering 24 being formed externally projection.
Figure 35 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 35 shows is substantially identical with the embodiment that Figure 33 shows, difference is: the first first type surface 35 of covering 34 forms the alligatoring structure 36 internally caved in.
Figure 36 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 36 shows is substantially identical with the embodiment that Figure 30 shows, difference is: the first first type surface of the transparent growth substrates 81 of the embodiment of Figure 36 forms the alligatoring structure 82 internally caved in.
Figure 37 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 37 shows is substantially identical with the embodiment that Figure 36 shows, difference is: the alligatoring structure 26 the first first type surface 25 of covering 24 being formed externally projection.
Figure 38 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 38 shows is substantially identical with the embodiment that Figure 36 shows, difference is: the first first type surface 35 of covering 34 forms the alligatoring structure 36 internally caved in.
Figure 39 a shows the sectional view of the specific embodiment of alligatoring structure of the present utility model.Alligatoring structure 142 is upwardly formed on the surface of object 141.The top of alligatoring structure 142 may not be point, and can be arc surface, also can be plane.
Attention: " object " represents, epitaxial loayer, or growth substrates, or covering.
Figure 39 b shows the sectional view of the specific embodiment of alligatoring structure of the present utility model.Alligatoring structure 145 to lower recess is formed on the surface of object 141.The bottom of alligatoring structure 145 may not be point, and can be arc surface, also can be plane.
The vertical view of the specific embodiment of Figure 39 c exploded view 39a and Figure 39 b.Alligatoring structure 144 is conical structures, is formed on the surface of object 141.Namely alligatoring structure 144 can be the vertical view of the alligatoring structure 142 upwardly representing Figure 39 a, also can be the vertical view of the alligatoring structure 145 to lower recess representing Figure 39 b.
The vertical view of the specific embodiment of Figure 39 d exploded view 39a and Figure 39 b.Alligatoring structure 143 is pyramid structures, is formed on the surface of object 141.Namely alligatoring structure 143 can be the vertical view of the alligatoring structure 142 upwardly representing Figure 39 a, also can be the vertical view of the alligatoring structure 145 of going recessed down representing Figure 39 b.
Figure 40 a shows the sectional view of the specific embodiment of alligatoring structure of the present utility model.The surface of object 151 is formed polyhedral cone shaped alligatoring structure 152 upwardly.The top of alligatoring structure 152 may not be point, and can be arc surface, also can be plane.
Figure 40 b shows the sectional view of the specific embodiment of alligatoring structure of the present utility model.The surface of object 151 is formed the polyhedral cone shaped alligatoring structure 153 to lower recess.The bottom of alligatoring structure 153 may not be point, and can be arc surface, also can be plane.
The vertical view of the specific embodiment of Figure 40 c exploded view 40a and Figure 40 b.Alligatoring structure 154 is the tapered array structures of polyhedron, is formed on the surface of covering 151.Namely alligatoring structure 154 can be the vertical view representing the tapered alligatoring structure 152 of the polyhedron upwardly of Figure 40 a, also can be the vertical view of the tapered alligatoring of the polyhedron to the lower recess structure 153 representing Figure 40 c.
Attention: although in Fig. 4 cb, the polyhedron tapered alligatoring structure of alligatoring structure 154 is that 6 bodies are tapered, also can be other polyhedrons tapered alligatoring structure (such as, 3 bodies, 5 bodies, 8 bodies) and irregular tip array structure.
Figure 41 a shows the sectional view of the specific embodiment of alligatoring structure of the present utility model.The surface of covering 161 is formed part sphere alligatoring structure 162 upwardly.
Figure 41 b shows the sectional view of the specific embodiment of alligatoring structure of the present utility model.The surface of covering 161 is formed the part sphere alligatoring structure 163 to lower recess.
The vertical view of the specific embodiment of Figure 41 c exploded view 41a and Figure 41 b.Alligatoring structure 164 is part sphere alligatoring structures, is formed on the surface of covering 161.Namely alligatoring structure 164 can be the vertical view of the part sphere alligatoring structure 162 upwardly representing Figure 41 a, also can be the vertical view of the part sphere alligatoring structure 163 to lower recess representing Figure 41 b.
Figure 42 a shows the sectional view of the specific embodiment of alligatoring structure of the present utility model.Alligatoring structure 172a upwardly and 172b is formed on the surface of object 171.The top of alligatoring structure 172a and 172b may not be point, and can be arc surface, also can be plane.The distance 173 predetermined is had between alligatoring structure 172a and 172b.
Figure 42 b shows the sectional view of the specific embodiment of alligatoring structure of the present utility model.Be formed on the surface of object 171 to the alligatoring structure 175a of lower recess and 175b.The bottom of alligatoring structure 175a and 175b may not be point, and can be arc surface, also can be plane.The distance 174 predetermined is had between alligatoring structure 175a and 175b.
The vertical view of the specific embodiment of Figure 42 c exploded view 42a and Figure 42 b.Alligatoring structure 172 is conical structures, is formed on the surface of object 171.Namely alligatoring structure 172 can be represent the alligatoring structure 172a upwardly of Figure 42 a and the vertical view of 172b, also can be represent Figure 42 b to the alligatoring structure 175a of lower recess and the vertical view of 175b.
The vertical view of the specific embodiment of Figure 42 d exploded view 42a and Figure 42 b.Alligatoring structure 175 is pyramid structures, is formed on the surface of object 171.Namely alligatoring structure 175 can be represent the alligatoring structure 172a upwardly of Figure 42 b and the vertical view of 172b, also can be represent Figure 42 b to the alligatoring structure 175a of lower recess and the vertical view of 175b.
Figure 43 shows the sectional view of an embodiment of wafer-level package of the present utility model.The embodiment that Figure 43 shows is substantially identical with the embodiment that Figure 30 shows, difference is: the outside of the covering 14 of Figure 43 is covered by second layer covering 91.On the surface 15 that second layer covering 91 covers covering 14 and side 93.The bottom 96 of the second covering 91 contacts supports substrate 100.
Note, the surface 92 of the second covering 91 can have alligatoring structure, does not show in the drawings.
Last it is noted that above embodiment is only in order to illustrate the technical solution of the utility model, be not intended to limit; Although be described in detail the utility model with reference to aforementioned embodiment, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in aforementioned embodiment, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of each embodiment technical scheme of the utility model.

Claims (9)

1. a semiconductor luminous chip level encapsulation, is characterized in that, described semiconductor luminous chip level encapsulation comprises, at least one semiconductor epitaxial layers and covering; Wherein, described epitaxial loayer comprises the first epitaxial loayer, luminescent layer and the second epitaxial loayer, makes described epitaxial loayer luminous after powered up; Described covering covers on the first epitaxial loayer of described epitaxial loayer, and covers four sides of described epitaxial loayer; First metal electrode is formed on described first epitaxial loayer, and the second metal electrode is formed on described second epitaxial loayer; Described first metal electrode and described second metal electrode are on the same face; Described covering has single or multiple lift structure.
2. semiconductor luminous chip level encapsulation according to claim 1, it is characterized in that, the surface of described first epitaxial loayer contacted with described covering is with alligatoring structure.
3. semiconductor luminous chip level encapsulation according to claim 2, it is characterized in that, the alligatoring structure on the surface of described first epitaxial loayer selects from one group of alligatoring structure, and this group alligatoring structure comprises: the pyramid array structure that (1) is raised to described covering direction from the surface of described first epitaxial loayer; (2) from the conical array array structure that the surface of described first epitaxial loayer is raised to described covering direction; (3) from the cylindrical-array structure that the surface of described first epitaxial loayer is raised to described covering direction; (4) from the part sphere array structure that the surface of described first epitaxial loayer is raised to described covering direction; (5) raised to described covering direction from the surface of the described first epitaxial loayer tapered array structure of polyhedron; (6) from the irregular tip array structure that the surface of described first epitaxial loayer is raised to described covering direction; (7) from the pyramid array structure internally caved in the surface of described first epitaxial loayer; (8) from the conical array array structure internally caved in the surface of described first epitaxial loayer; (9) from the cylindrical-array structure internally caved in the surface of described first epitaxial loayer; (10) from the part sphere array structure internally caved in the surface of described first epitaxial loayer; (11) the tapered array structure of polyhedron internally caved in from the surface of described first epitaxial loayer; (12) the irregular tip array structure internally caved in from the surface of described first epitaxial loayer.
4. semiconductor luminous chip level encapsulation according to claim 1, it is characterized in that, the surface of described covering is with alligatoring structure.
5. semiconductor luminous chip level encapsulation according to claim 4, it is characterized in that, the alligatoring structure on the surface of described covering selects from one group of alligatoring structure, and this group alligatoring structure comprises: (1) is from the pyramid array structure of the outwardly portion projection of described covering; (2) from the conical array array structure of the outwardly portion projection of described covering; (3) from the cylindrical-array structure of the outwardly portion projection of described covering; (4) from the part sphere array structure of the outwardly portion projection of described covering; (5) from the tapered array structure of polyhedron of the outwardly portion projection of described covering; (6) from the irregular tip array structure of the outwardly portion projection of described covering; (7) the pyramid array structure internally caved in from the surface of described covering; (8) the conical array array structure internally caved in from the surface of described covering; (9) the cylindrical-array structure internally caved in from the surface of described covering; (10) the part sphere array structure internally caved in from the surface of described covering; (11) the tapered array structure of polyhedron internally caved in from the surface of described covering; (12) the irregular tip array structure internally caved in from the surface of described covering.
6. semiconductor luminous chip level encapsulation according to claim 1, is characterized in that, comprises transparent growth substrates lining further; Described growth bottom is stacked between described covering and described first epitaxial loayer; Described growth substrates has the first relative first type surface and the second first type surface; Second major surface of described growth substrates is stacked on described first epitaxial loayer, and described blanket layer is stacked on the first first type surface of described growth substrates; Described covering covers the first first type surface and four sides of described growth substrates.
7. semiconductor luminous chip level encapsulation according to claim 6, it is characterized in that, the surface of the described growth substrates contacted with described covering is with alligatoring structure; The alligatoring structure of the first first type surface of described growth substrates selects from one group of alligatoring structure, and this group alligatoring structure comprises: (1) is from the first first type surface of described growth substrates pyramid array structure raised to described covering direction; (2) from the conical array array structure that the first first type surface of described growth substrates is raised to described covering direction; (3) from the cylindrical-array structure that the first first type surface of described growth substrates is raised to described covering direction; (4) from the part sphere array structure that the first first type surface of described growth substrates is raised to described covering direction; (5) from the tapered array structure of polyhedron that the first first type surface of described growth substrates is raised to described covering direction; (6) from the irregular tip array structure that the first first type surface of described growth substrates is raised to described covering direction; (7) from the pyramid array structure that the first first type surface of described growth substrates internally caves in; (8) from the conical array array structure that the first first type surface of described growth substrates internally caves in; (9) from the cylindrical-array structure that the first first type surface of described growth substrates internally caves in; (10) from the part sphere array structure that the first first type surface of described growth substrates internally caves in; (11) from the tapered array structure of polyhedron that the first first type surface of described growth substrates internally caves in; (12) from the irregular tip array structure that the first first type surface of described growth substrates internally caves in.
8. semiconductor luminous chip level encapsulation according to claim 1, is characterized in that, comprise metallized support substrate further; Described first first type surface of described support substrate comprises the first electrode and the second electrode, second first type surface of described support substrate comprises the first electrode and the second electrode, the first electrode on described first first type surface and the second electrode are electrically connected with the first electrode on described second first type surface and the second electrode respectively; Described first metal electrode and described second metal electrode are electrically connected with described first electrode on described first first type surface and described second electrode respectively.
9. semiconductor luminous chip level encapsulation according to claim 1, it is characterized in that, described semiconductor luminous chip selects from one group of semiconductor luminous chip, this group semiconductor luminous chip comprises, GaN base semiconductor luminous chip, GaP based semiconductor light emitting chip, GaNP based semiconductor light emitting chip.
CN201520513632.8U 2015-07-09 2015-07-09 Encapsulation of semiconductor luminescence chip level Expired - Fee Related CN204905281U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104993029A (en) * 2015-07-09 2015-10-21 佛山市南海区联合广东新光源产业创新中心 Semiconductor light-emitting chip scale package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104993029A (en) * 2015-07-09 2015-10-21 佛山市南海区联合广东新光源产业创新中心 Semiconductor light-emitting chip scale package

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