CN204809249U

CN204809249U - Blue light LED epitaxial structure of growing on gaAs substrate

Info

Publication number: CN204809249U
Application number: CN201520546828.7U
Authority: CN
Inventors: 田宇; 郑建钦; 吴真龙; 曾颀尧; 李鹏飞
Original assignee: NANTONG TONGFANG SEMICONDUCTOR CO Ltd; Tongfang Co Ltd
Current assignee: NANTONG TONGFANG SEMICONDUCTOR CO Ltd; Tsinghua Tongfang Co Ltd; Tongfang Co Ltd
Priority date: 2015-07-27
Filing date: 2015-07-27
Publication date: 2015-11-25
Anticipated expiration: 2025-07-27

Abstract

Blue light LED epitaxial structure of growing on gaAs substrate relates to emitting diode technical field. The utility model discloses supreme substrate, buffer layer, U type gaN layer, N type gaN layer, active area, electron barrier layer and the P type gaN layer of including is in proper order down followed to the structure. Structurally, the substrate is the gaAs substrate, the buffer layer includes znO buffer layer and the metal nitride buffer layer of growth on the znO buffer layer, supreme U1 type gaN layer, bragg reflection layer and the U2 type gaN layer of including is in proper order down followed on U type gaN layer. Compared with the prior art, the utility model discloses a gaAs substrate has the quality height, easily dissociates and the lower characteristics of cost relative ratio, easily do moreover the vertical stratification, easily the p type adulterate, can improve luminous efficiency.

Description

The blue-ray LED epitaxial structure grown on gaas substrates

Technical field

The utility model relates to LED technology field, the blue-ray LED epitaxial structure particularly grown on gaas substrates.

Background technology

Along with blue light GaN base LED applies more and more extensive, the brightness of people to blue light GaN base LED is paid close attention to more, and LED researcher is by adjustment patterned sapphire substrate specifications, Si substrate, SiC, ZnO in recent years, develops blue-ray LED.Object reduces costs and improve epitaxial crystal quality, thus promote the fast development of blue-ray LED.

In prior art, most blue-ray LED is all the Si Growns at Sapphire Substrate, SiC substrate and recent development.

Traditional blue light GaN base LED epitaxial structure as shown in Figure 1, is followed successively by from top to bottom: the resilient coating 2 of patterned sapphire substrate 1, AlN, U-shaped GaN layer 3, N-type GaN layer 4, active layer 5, P type AlxGa1-xN electronic barrier layer 6 and P type GaN layer 7.What prior art application was more is first plated resilient coating on a sapphire substrate, to enhance productivity, reduces holistic cost.But itself is expensive, therefore cost reduction amplitude is little.Meanwhile, in vertical stratification, manufacture craft is more difficult, and P type doping content is lower.

Summary of the invention

For above-mentioned the deficiencies in the prior art, the purpose of this utility model is to provide a kind of blue-ray LED epitaxial structure grown on gaas substrates.Its adopts GaAs substrate, have that quality is high, legibility from and the relatively low feature of cost, and the vertical stratification that is easy to do, be easy to p-type doping, can light extraction efficiency be improved.

In order to reach foregoing invention object, the technical solution of the utility model realizes as follows:

The blue-ray LED epitaxial structure grown on gaas substrates, it comprises substrate, resilient coating, U-shaped GaN layer, N-type GaN layer, active area, electronic barrier layer and P type GaN layer from bottom to up successively.Its design feature is, described substrate is GaAs substrate, and described resilient coating comprises ZnO buffer and the metal nitride resilient coating of growth in ZnO buffer, and described U-shaped GaN layer comprises U1 type GaN layer, Bragg reflecting layer and U2 type GaN layer from bottom to up successively.

In above-mentioned blue-ray LED epitaxial structure, the growth thickness of described ZnO buffer is 5-30nm, and growth temperature is 500-800 °.

In above-mentioned blue-ray LED epitaxial structure, the thickness of described metal nitride resilient coating is 5 ~ 30nm, and growth temperature is 500-800 °, metal nitride resilient coating be in AlN resilient coating, GaN resilient coating or AlGaN resilient coating any one.A buffering can be provided for growth GaN material, reduce certain stress.

In above-mentioned blue-ray LED epitaxial structure, the thickness of described U1 type GaN layer is 1um ~ 5um, and growth temperature is 900-1200 degree.First good intrinsic semiconductor of crystal mass is provided.

In above-mentioned blue-ray LED epitaxial structure, described Bragg reflecting layer is superlattice GaN/AlGaN, described superlattice GaN/AlGaN is GaN layer and AlGaN layer alternating growth, growth cycle number is 3-20, wherein GaN thickness is 1-50nm, AlGaN thickness is the Al component of 1-50nm, AlGaN is 0.2 ~ 0.6.The growth temperature of described Bragg reflecting layer is at 900-1200 degree.Bragg reflecting layer mainly reflects the downward light in active area, reduces GaAs substrate to the absorption of light, improves brightness.

In above-mentioned blue-ray LED epitaxial structure, the thickness of described U2 type GaN layer is 1-5um, and growth temperature is at 900-1200 degree.Second good intrinsic semiconductor of crystal mass is provided.

The utility model, owing to have employed said structure, directly can do vertical stratification by GaAs substrate, increases lighting area.Reduced the lattice match of GaAs substrate and GaN material by ZnO and AlN resilient coating, improve crystal mass.Secondly, GaAs substrate can obtain higher P type doping content, thus promotes the combined efficiency of wave function, and then obtains higher brightness.Grow blue-ray LED epitaxial structure on gaas substrates, reduce the cost producing blue-ray LED, meanwhile, contribute to the exploitation of vertical stratification, obtain higher P type doping content.

Below in conjunction with the drawings and specific embodiments, the utility model is described further.

Accompanying drawing explanation

Fig. 1 is LED epitaxial structure schematic diagram in prior art;

Fig. 2 is the epitaxial structure schematic diagram of the utility model GaAs Grown blue-ray LED.

Embodiment

Referring to Fig. 2, the blue-ray LED epitaxial structure that the utility model grows on gaas substrates comprises substrate 1, resilient coating 2, U-shaped GaN layer 3, N-type GaN layer 4, active area 5, electronic barrier layer 6 and P type GaN layer 7 from bottom to up successively.Substrate 1 is GaAs substrate, and resilient coating 2 comprises ZnO buffer 21 and the metal nitride resilient coating 22 of growth in ZnO buffer 21.U-shaped GaN layer 3 comprises U1 type GaN layer 31, Bragg reflecting layer 33 and U2 type GaN layer 32 from bottom to up successively.The growth thickness of ZnO buffer 21 is 5-30nm, and growth temperature is 500-800 °.The thickness of metal nitride resilient coating 22 is 5 ~ 30nm, and growth temperature is 500-800 °, metal nitride resilient coating 22 be in AlN resilient coating, GaN resilient coating or AlGaN resilient coating any one.The thickness of U1 type GaN layer 31 is 1um ~ 5um, and growth temperature is 900-1200 degree.Bragg reflecting layer 33 is superlattice GaN/AlGaN, described superlattice GaN/AlGaN is GaN layer and AlGaN layer alternating growth, growth cycle number is 3-20, wherein GaN thickness is 1-50nm, AlGaN thickness is 1-50nm, the Al component of AlGaN is 0.2 ~ 0.6, and the growth temperature of described Bragg reflecting layer 33 is at 900-1200 degree.The thickness of U2 type GaN layer 32 is 1-5um, and growth temperature is at 900-1200 degree.

The above; be only specific embodiment of the utility model, be not limited to other execution mode of the present invention, within all genus technology path principle of the present utility model; the any apparent replacement done or improvement, all should belong within protection range of the present utility model.

Claims

1. the blue-ray LED epitaxial structure grown on gaas substrates, it comprises substrate (1) from bottom to up successively, resilient coating (2), U-shaped GaN layer (3), N-type GaN layer (4), active area (5), electronic barrier layer (6) and P type GaN layer (7), it is characterized in that: described substrate (1) is GaAs substrate, described resilient coating (2) comprises ZnO buffer (21) and the metal nitride resilient coating (22) of growth in ZnO buffer (21), described U-shaped GaN layer (3) comprises U1 type GaN layer (31) from bottom to up successively, Bragg reflecting layer (33) and U2 type GaN layer (32).

2. the blue-ray LED epitaxial structure grown on gaas substrates according to claim 1, is characterized in that: the growth thickness of described ZnO buffer (21) is 5-30nm.

3. the blue-ray LED epitaxial structure grown on gaas substrates according to claim 1 or 2, it is characterized in that: the thickness of described metal nitride resilient coating (22) is 5 ~ 30nm, growth temperature is 500-800 °, metal nitride resilient coating (22) is AlN resilient coating, in GaN resilient coating or AlGaN resilient coating any one.

4. the blue-ray LED epitaxial structure grown on gaas substrates according to claim 3, is characterized in that: the thickness of described U1 type GaN layer (31) is 1um ~ 5um.

5. the blue-ray LED epitaxial structure grown on gaas substrates according to claim 4, it is characterized in that: described Bragg reflecting layer (33) is superlattice GaN/AlGaN, described superlattice GaN/AlGaN is GaN layer and AlGaN layer alternating growth, growth cycle number is 3-20, wherein GaN thickness is 1-50nm, AlGaN thickness is 1-50nm.

6. the blue-ray LED epitaxial structure grown on gaas substrates according to claim 5, is characterized in that: the thickness of described U2 type GaN layer (32) is 1-5um.