CN203445142U - Blue LED epitaxial structure with asymmetric barrier layer - Google Patents
Blue LED epitaxial structure with asymmetric barrier layer Download PDFInfo
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- CN203445142U CN203445142U CN201320369872.6U CN201320369872U CN203445142U CN 203445142 U CN203445142 U CN 203445142U CN 201320369872 U CN201320369872 U CN 201320369872U CN 203445142 U CN203445142 U CN 203445142U
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Abstract
The utility model discloses a blue LED epitaxial structure with an asymmetric barrier layer, and relates to the technical field of light-emitting diode epitaxy. The structure provided by the utility model sequentially comprises a sapphire substrate, an AIN buffer layer, a U-type GaN layer, an N-type GaN layer, an active region, an electronic barrier layer, and a P-type from the bottom to the top. The active region comprises a trap layer and a barrier layer. The number of growth cycles of the active region is 3m. The active region comprises three parts, and each part grows in m cycles, and the barrier layer consists of an AlxGa1-xN layer, an AlyIn1-yN layer, and an InzGa1-zN layer, wherein the m is not less than one and not greater than five. Compared with the prior art, the structure provided by the utility model can alleviate the phenomenon of overflow, can reduce the bending of an energy band, and can improve the internal quantum efficiency, thereby effectively improving the luminous efficiency.
Description
Technical field
The utility model relates to LED epitaxial technical field, particularly a kind of blue-ray LED epitaxial structure with asymmetric base layer.
Background technology
At present, along with the whole world improves constantly the attention degree of new forms of energy, LED industry is development fast thereupon also.A lot of experts and scholars, develop the new material and the new construction that much contribute to improve brightness.Wherein, in blue-ray LED, active area is very important one deck.
In prior art, blue-ray LED epitaxial structure comprises Sapphire Substrate 1, AlN resilient coating 2, U-shaped GaN layer 3, N-type GaN layer 4, active area 5, electronic barrier layer 6 and P type GaN layer 7, as shown in Figure 1.Active area 5 comprises trap layer 8 and base layer 9, as shown in Figure 2.But there is following shortcoming in the active area of said structure 5: first, owing to having larger lattice mismatch between trap layer and base layer, can produce stronger internal electric field, impel band curvature; Secondly, because the effective mass of electronics is low weight, there will be the phenomenon of overflow; Then be to have larger energy level difference between last base layer and P type electronic barrier layer, the effective recombination probability in restricted part electricity hole.
Summary of the invention
For above-mentioned the deficiencies in the prior art, the purpose of this utility model is to provide a kind of asymmetric blue-ray LED epitaxial structure of building layer that has.It can slow down overflow phenomena and fall the bending of low-energy zone, improves internal quantum efficiency, thereby effectively improves light extraction efficiency.
In order to reach foregoing invention object, the technical solution of the utility model realizes as follows:
There is the asymmetric blue-ray LED epitaxial structure of building layer, it comprises Sapphire Substrate, AlN resilient coating, U-shaped GaN layer, N-type GaN layer, active area, electronic barrier layer and P type GaN layer from bottom to up successively, active area comprises trap layer and builds layer, the growth cycle number of described active area is 3m cycle, active area comprises three parts, in each some growth m cycle, builds layer and is comprised of AlxGa1-xN layer, AlyIn1-yN layer and InzGa1-zN layer, wherein, 1≤m≤5.
In above-mentioned blue-ray LED epitaxial structure Zhong， active area first, be trap layer and AlxGa1-xN layer alternating growth; Active area second portion is trap layer and AlyIn1-yN layer alternating growth; Active area third part is trap layer and InzGa1-zN layer alternating growth.
In above-mentioned blue-ray LED epitaxial structure, the growth temperature of described AlxGa1-xN layer is 650-1200 ℃, Al component is 0<x<1, growth thickness is 1-500nm, growth pressure is 50-800 mbar, AlxGa1-xN growth thickness is along with the increase of amount of cycles increases or attenuation gradually gradually, and Al component is along with the increase in cycle increases gradually or reduces gradually.The growth temperature of AlyIn1-yN layer is 650-1000 ℃, and Al component is 0<y<1, and growth thickness is 1-100nm, and growth pressure is 50-800 mbar; The growth temperature of described InzGa1-zN layer is 650-1000 ℃, In component is 0<Z<1, growth thickness is 1-500nm, growth pressure is 50-800 mbar, InzGa1-zN growth thickness is along with the increase of amount of cycles increases or attenuation gradually gradually, and In component is along with the increase in cycle increases gradually or reduces gradually.
In above-mentioned blue-ray LED epitaxial structure, described AlxGa1-xN layer growth N-type, doped chemical is Si, doping content is 1x10
17cm
3~ 5x10
20cm
3; Described AlyIn1-yN layer growth N-type, doped chemical is Si, doping content is 1x10
17cm
3~ 5x10
20cm
3; Described InzGa1-zN layer growth N-type, doped chemical is Si, doping content is 1x10
17cm
3~ 5x10
20cm
3.
In above-mentioned blue-ray LED epitaxial structure, described AlxGa1-xN layer growth P type, doped chemical is Mg or Zn, doping content is 1x10
17~ 1x10
23cm
3; Described AlyIn1-yN layer growth P type, doped chemical is Mg or Zn, doping content is 1x10
17~ 1x10
23cm
3; Described InzGa1-zN layer growth P type, doped chemical is Mg or Zn, doping content is 1x10
17~ 1x10
23cm
3.
In above-mentioned blue-ray LED epitaxial structure, being with of described growth AlxGa1-xN layer is greater than being with of growth AlyIn1-yN layer, and being with of growth AlyIn1-yN layer is greater than being with of growth InzGa1-zN layer.
In above-mentioned blue-ray LED epitaxial structure, grow in described active area in nitrogen, hydrogen or hydrogen nitrogen hybird environment.
The utility model is owing to having adopted said structure, by the base layer of active area be divided into three parts and with trap layer alternating growth, the AlGaN of first discharges stress, second portion AlInN effect is the mismatch between reduction and InGaN trap layer, third part InGaN effect be regulate and EBL between can be with poorly, be more conducive to the transition in electric hole.Compared with the existing technology, the utility model is built the height of gesture by raising, has suppressed the generation of electronics overflow phenomena; By reducing lattice mismatch, improve the crystal mass of active area; By reducing last, build and can be with poorly between layer and EBL, impel electric hole more easily to transit to active area, thereby improved on the whole crystal mass and the light extraction efficiency of internal quantum efficiency, active area.
Below in conjunction with the drawings and specific embodiments, the utility model is described further.
Accompanying drawing explanation
Fig. 1 is LED epitaxial structure schematic diagram in prior art;
Fig. 2 is LED active area structure schematic diagram in prior art;
Fig. 3 is the utility model LED epitaxial structure schematic diagram;
Fig. 4 is that the utility model base layer can be with schematic diagram.
Embodiment
Referring to Fig. 3, the utility model comprises Sapphire Substrate 1, AlN resilient coating 2, U-shaped GaN layer 3, N-type GaN layer 4, active area 5, electronic barrier layer 6 and P type GaN layer 7 from bottom to up successively.Active area 5 comprises trap layer 8 and builds layer 9.Grow 3m cycle in active area 5 in nitrogen, hydrogen or hydrogen nitrogen hybird environment, active area 5 comprises three parts, each some growth m cycle, and build layer and formed by AlxGa1-xN layer 10, AlyIn1-yN layer 11 and InzGa1-zN layer 12, wherein, 1≤m≤5.Active area 5 firsts are trap layer 8 and AlxGa1-xN layer 10 alternating growth; Active area 5 second portions are trap layer 8 and AlyIn1-yN layer 11 alternating growth; Active area 5 third parts are trap layer 8 and InzGa1-zN layer 12 alternating growth.
The growth temperature of above-mentioned AlxGa1-xN layer 10 is 650-1200 ℃, Al component is 0<x<1, growth thickness is 1-500nm, growth pressure is 50-800 mbar, AlxGa1-xN layer 10 growth thickness are along with the increase of amount of cycles increases or attenuation gradually gradually, and Al component is along with the increase in cycle increases gradually or reduces gradually.The growth temperature of AlyIn1-yN layer 11 is 650-1000 ℃, and Al component is 0<y<1, and growth thickness is 1-100nm, and growth pressure is 50-800 mbar; The growth temperature of described InzGa1-zN layer 12 is 650-1000 ℃, In component is 0<Z<1, growth thickness is 1-500nm, growth pressure is 50-800 mbar, InzGa1-zN12 growth thickness is along with the increase of amount of cycles increases or attenuation gradually gradually, and In component is along with the increase in cycle increases gradually or reduces gradually.
AlxGa1-xN layer 10 growth N-type, doped chemical is Si, doping content is 1x1017 cm3 ~ 5x1020 cm3.AlyIn1-yN layer 11 growth N-type, doped chemical is Si, doping content is 1x1017 cm3 ~ 5x1020 cm3.InzGa1-zN layer 12 growth N-type, doped chemical is Si, doping content is 1x1017 cm3 ~ 5x1020 cm3.AlxGa1-xN layer 10 growing P-type, doped chemical is Mg or Zn, doping content is 1x1017 ~ 1x1023 cm3.AlyIn1-yN layer 11 growing P-type, doped chemical is Mg or Zn, doping content is 1x1017 ~ 1x1023 cm3.InzGa1-zN layer 12 growing P-type, doped chemical is Mg or Zn, doping content is 1x1017 ~ 1x1023 cm3.Being with of growth AlxGa1-xN layer 10 is greater than being with of growth AlyIn1-yN layer 11, and being with of growth AlyIn1-yN layer 11 is greater than being with of growth InzGa1-zN layer 12.
Referring to Fig. 4, trap layer 8 and base layer 9 alternating growth, being with into that step reduces gradually or raising gradually of AlxGa1-xN layer 10, AlyIn1-yN layer 11, InzGa1-zN layer 12, the growth thickness of AlxGa1-xN layer 10 is along with the increase of amount of cycles increases or attenuation gradually gradually, and Al component is along with the increase in cycle increases gradually or reduces gradually; InzGa1-zN layer 12 growth thickness are along with the increase of amount of cycles increases or attenuation gradually gradually, and In component is along with the increase in cycle increases gradually or reduces gradually.
The preparation method of epitaxial structure carries out high-temperature baking in MOCVD reacting furnace, remove the residual impurity on Sapphire Substrate 1 surface, at slow cooling between 500-900 ℃, growth one deck AlN resilient coating 2, then heat up rapidly, at the 900-1200 ℃ of U-shaped GaN layer 3 of growth, about 10-80min that grows, thickness is 1-10um.The N-type of growing afterwards GaN layer 4, growth temperature is at 900-1200 ℃, and growth thickness is at 1-10um.Growth active area 5, the P-AlGaN 6 that grows at 800-1000 ℃, thickness is 50-1000 dust.Regrowth P-GaN 7, growth temperature is grown at 800-1200 ℃, and thickness is 1000-5000 dust, and the concentration of Mg is 5x10
17~ 1x10
23cm3.
The concrete growth pattern of the utility model active area comprises the following steps:
Embodiment mono-:
Grow 3 cycles in active area 5 in nitrogen, hydrogen or hydrogen nitrogen hybird environment, active area 5 comprises three parts, 1 cycle of each some growth, build layer and be comprised of AlxGa1-xN layer 10, AlyIn1-yN layer 11 and InzGa1-zN layer 12, active area 5 firsts are trap layer 8 and AlxGa1-xN layer 10 alternating growth; Active area 5 second portions are trap layer 8 and AlyIn1-yN layer 11 alternating growth; Active area 5 third parts are trap layer 8 and InzGa1-zN layer 12 alternating growth.The growth temperature of the AlxGa1-xN of first layer 10 is 650 ℃, and Al component is 0<x<1, and growth thickness is 1nm, and growth pressure is 50mbar, AlxGa1-xN layer 10 growth N-type, and doped chemical is Si, doping content is 1x10
17cm
3; The growth temperature of second portion AlyIn1-yN layer 11 is 650 ℃, and Al component is 0<y<1, and growth thickness is 1nm, and growth pressure is 50mbar, AlyIn1-yN layer 11 growth N-type, and doped chemical is Si, doping content is 1x10
17cm
3; The growth temperature of third part InzGa1-zN layer 12 is 650 ℃, and In component is 0<Z<1, and growth thickness is 1nm, and growth pressure is 50mbar, InzGa1-zN layer 12 growth N-type, and doped chemical is Si, doping content is 1x10
17cm
3.
Embodiment bis-:
Grow 6 cycles in active area 5 in nitrogen, hydrogen or hydrogen nitrogen hybird environment, active area 5 comprises three parts, 2 cycles of each some growth, build layer and be comprised of AlxGa1-xN layer 10, AlyIn1-yN layer 11 and InzGa1-zN layer 12, active area 5 firsts are trap layer 8 and AlxGa1-xN layer 10 alternating growth; Active area 5 second portions are trap layer 8 and AlyIn1-yN layer 11 alternating growth; Active area 5 third parts are trap layer 8 and InzGa1-zN layer 12 alternating growth.The growth temperature of the AlxGa1-xN of first layer 10 is 850 ℃, and Al component is 0<x<1, and growth thickness is 17nm, growth pressure is 400mbar, AlxGa1-xN layer 10 growth N-type, doped chemical is Si, doping content is 5x10
18cm
3; The growth temperature of second portion AlyIn1-yN layer 11 is 800 ℃, and Al component is 0<y<1, and growth thickness is 17nm, growth pressure is 400mbar, AlyIn1-yN layer 11 growth N-type, doped chemical is Si, doping content is 5x10
18cm
3; The growth temperature of third part InzGa1-zN layer 12 is 800 ℃, and In component is 0<Z<1, and growth thickness is 17nm, growth pressure is 400mbar, InzGa1-zN layer 12 growth N-type, doped chemical is Si, doping content is 5x10
18cm
3.
Embodiment tri-:
Grow 15 cycles in active area 5 in nitrogen, hydrogen or hydrogen nitrogen hybird environment, active area 5 comprises three parts, 5 cycles of each some growth, build layer and be comprised of AlxGa1-xN layer 10, AlyIn1-yN layer 11 and InzGa1-zN layer 12, active area 5 firsts are trap layer 8 and AlxGa1-xN layer 10 alternating growth; Active area 5 second portions are trap layer 8 and AlyIn1-yN layer 11 alternating growth; Active area 5 third parts are trap layer 8 and InzGa1-zN layer 12 alternating growth.The growth temperature of the AlxGa1-xN of first layer 10 is 1200 ℃, and Al component is 0<x<1, and growth thickness is 500nm, growth pressure is 800mbar, AlxGa1-xN layer 10 growth N-type, doped chemical is Si, doping content is 5x10
20cm
3; The growth temperature of second portion AlyIn1-yN layer 11 is 1000 ℃, and Al component is 0<y<1, and growth thickness is 100nm, growth pressure is 800mbar, AlyIn1-yN layer 11 growth N-type, doped chemical is Si, doping content is 5x10
20cm
3; The growth temperature of third part InzGa1-zN layer 12 is 1000 ℃, and In component is 0<Z<1, and growth thickness is 500nm, growth pressure is 800mbar, InzGa1-zN layer 12 growth N-type, doped chemical is Si, doping content is 5x10
20cm
3.
Embodiment tetra-:
Grow 3 cycles in active area 5 in nitrogen, hydrogen or hydrogen nitrogen hybird environment, active area 5 comprises three parts, 1 cycle of each some growth, build layer and be comprised of AlxGa1-xN layer 10, AlyIn1-yN layer 11 and InzGa1-zN layer 12, active area 5 firsts are trap layer 8 and AlxGa1-xN layer 10 alternating growth; Active area 5 second portions are trap layer 8 and AlyIn1-yN layer 11 alternating growth; Active area 5 third parts are trap layer 8 and InzGa1-zN layer 12 alternating growth.The growth temperature of the AlxGa1-xN of first layer 10 is 650 ℃, and Al component is 0<x<1, and growth thickness is 1nm, growth pressure is 50mbar, AlxGa1-xN layer 10 growing P-type, doped chemical is Mg or Zn, doping content is 1x10
17cm
3; The growth temperature of second portion AlyIn1-yN layer 11 is 650 ℃, and Al component is 0<y<1, and growth thickness is 1nm, growth pressure is 50mbar, AlyIn1-yN layer 11 growing P-type, doped chemical is Mg or Zn, doping content is 1x10
17cm
3; The growth temperature of third part InzGa1-zN layer 12 is 650 ℃, and In component is 0<Z<1, and growth thickness is 1nm, growth pressure is 50mbar, InzGa1-zN layer 12 growing P-type, doped chemical is Mg or Zn, doping content is 1x10
17cm
3.
Embodiment five:
Grow 6 cycles in active area 5 in nitrogen, hydrogen or hydrogen nitrogen hybird environment, active area 5 comprises three parts, 2 cycles of each some growth, build layer and be comprised of AlxGa1-xN layer 10, AlyIn1-yN layer 11 and InzGa1-zN layer 12, active area 5 firsts are trap layer 8 and AlxGa1-xN layer 10 alternating growth; Active area 5 second portions are trap layer 8 and AlyIn1-yN layer 11 alternating growth; Active area 5 third parts are trap layer 8 and InzGa1-zN layer 12 alternating growth.The growth temperature of the AlxGa1-xN of first layer 10 is 850 ℃, and Al component is 0<x<1, and growth thickness is 17nm, growth pressure is 400mbar, AlxGa1-xN layer 10 growing P-type, doped chemical is Mg or Zn, doping content is 1x10
18cm
3; The growth temperature of second portion AlyIn1-yN layer 11 is 800 ℃, and Al component is 0<y<1, and growth thickness is 17nm, growth pressure is 400mbar, AlyIn1-yN layer 11 growing P-type, doped chemical is Mg or Zn, doping content is 1x10
18cm
3; The growth temperature of third part InzGa1-zN layer 12 is 800 ℃, and In component is 0<Z<1, and growth thickness is 17nm, growth pressure is 400mbar, InzGa1-zN layer 12 growing P-type, doped chemical is Mg or Zn, doping content is 1x10
18cm
3.
Embodiment six:
Grow 15 cycles in active area 5 in nitrogen, hydrogen or hydrogen nitrogen hybird environment, active area 5 comprises three parts, 5 cycles of each some growth, build layer and be comprised of AlxGa1-xN layer 10, AlyIn1-yN layer 11 and InzGa1-zN layer 12, active area 5 firsts are trap layer 8 and AlxGa1-xN layer 10 alternating growth; Active area 5 second portions are trap layer 8 and AlyIn1-yN layer 11 alternating growth; Active area 5 third parts are trap layer 8 and InzGa1-zN layer 12 alternating growth.The growth temperature of the AlxGa1-xN of first layer 10 is 1200 ℃, and Al component is 0<x<1, and growth thickness is 500nm, growth pressure is 800mbar, AlxGa1-xN layer 10 growing P-type, doped chemical is Mg or Zn, doping content is 1x10
23cm
3; The growth temperature of second portion AlyIn1-yN layer 11 is 1000 ℃, and Al component is 0<y<1, and growth thickness is 100nm, growth pressure is 800mbar, AlyIn1-yN layer 11 growing P-type, doped chemical is Mg or Zn, doping content is 1x10
23cm
3; The growth temperature of third part InzGa1-zN layer 12 is 1000 ℃, and In component is 0<Z<1, and growth thickness is 500nm, growth pressure is 800mbar, InzGa1-zN layer 12 growing P-type, doped chemical is Mg or Zn, doping content is 1x10
23cm
3.
Claims (4)
1. there is the asymmetric blue-ray LED epitaxial structure of building layer, it comprises Sapphire Substrate (1) from bottom to up successively, AlN resilient coating (2), U-shaped GaN layer (3), N-type GaN layer (4), active area (5), electronic barrier layer (6) and P type GaN layer (7), active area (5) comprises trap layer (8) and builds layer (9), it is characterized in that: the growth cycle number of described active area (5) is 3m cycle, active area (5) comprises three parts, each some growth m cycle, build layer by AlxGa1-xN layer (10), AlyIn1-yN layer (11) and InzGa1-zN layer (12) form, wherein, 1≤m≤5.
2. the blue-ray LED epitaxial structure with asymmetric base layer according to claim 1, is characterized in that: active area (5) first is trap layer (8) and AlxGa1-xN layer (10) alternating growth; Active area (5) second portion is trap layer (8) and AlyIn1-yN layer (11) alternating growth; Active area (5) third part is trap layer (8) and InzGa1-zN layer (12) alternating growth.
3. according to claim 1 and 2 have an asymmetric blue-ray LED epitaxial structure of building layer, it is characterized in that: the growth temperature of described AlxGa1-xN layer (10) is 650-1200 ℃, Al component is 0<x<1, growth thickness is 1-500nm, growth pressure is 50-800 mbar, AlxGa1-xN layer (10) growth thickness is along with the increase of amount of cycles increases or attenuation gradually gradually, and Al component is along with the increase in cycle increases gradually or reduces gradually; The growth temperature of described AlyIn1-yN layer (11) is 650-1000 ℃, and Al component is 0<y<1, and growth thickness is 1-100nm, and growth pressure is 50-800 mbar; The growth temperature of described InzGa1-zN layer (12) is 650-1000 ℃, In component is 0<Z<1, growth thickness is 1-500nm, growth pressure is 50-800 mbar, InzGa1-zN layer (12) growth thickness is along with the increase of amount of cycles increases or attenuation gradually gradually, and In component is along with the increase in cycle increases gradually or reduces gradually.
4. according to claim 3 have an asymmetric blue-ray LED epitaxial structure of building layer, it is characterized in that: being with of described growth AlxGa1-xN layer (10) is greater than being with of growth AlyIn1-yN layer (11), being with of growth AlyIn1-yN layer (11) is greater than being with of growth InzGa1-zN layer (12).
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104253182A (en) * | 2013-06-26 | 2014-12-31 | 南通同方半导体有限公司 | Blue-light LED (Light-Emitting Diode) epitaxial structure having asymmetrical barrier layer |
| CN104952997A (en) * | 2015-06-29 | 2015-09-30 | 聚灿光电科技股份有限公司 | LED epitaxy structure and preparation method thereof |
| CN110161070A (en) * | 2019-05-22 | 2019-08-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of method and apparatus using photoelectron spectroscopy measurement band curvature |
-
2013
- 2013-06-26 CN CN201320369872.6U patent/CN203445142U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104253182A (en) * | 2013-06-26 | 2014-12-31 | 南通同方半导体有限公司 | Blue-light LED (Light-Emitting Diode) epitaxial structure having asymmetrical barrier layer |
| CN104253182B (en) * | 2013-06-26 | 2019-07-16 | 南通同方半导体有限公司 | A kind of blue-ray LED epitaxial structure with asymmetric barrier layer |
| CN104952997A (en) * | 2015-06-29 | 2015-09-30 | 聚灿光电科技股份有限公司 | LED epitaxy structure and preparation method thereof |
| CN110161070A (en) * | 2019-05-22 | 2019-08-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of method and apparatus using photoelectron spectroscopy measurement band curvature |
| CN110161070B (en) * | 2019-05-22 | 2022-03-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method and device for measuring energy band bending by utilizing photoelectron spectrum |
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Granted publication date: 20140219 Effective date of abandoning: 20190716 |