CN106711303A - Blue light LED epitaxial structure grown on GaAs substrate - Google Patents
Blue light LED epitaxial structure grown on GaAs substrate Download PDFInfo
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Abstract
The invention relates to a blue light LED epitaxial structure grown on a GaAs substrate, relating to the technical field of light-emitting diodes. The structure of the blue light LED epitaxial structure comprises a substrate, a buffer layer, a U type GaN layer, an N type GaN layer, an active region, an electronic barrier layer and a P type GaN layer from the bottom to top. The structure is characterized in that the substrate is a GaAs substrate, the buffer layer comprises a ZnO buffer layer and a metal nitride buffer layer growth on the ZnO buffer layer, and the U type GaN layer comprises a U1 type GaN layer, a Prague reflection layer, and a U2 type GaN layer from the bottom to top. Compared with the prior art, the blue light LED epitaxial structure has the advantages that the GaAs substrate is employed, the quality is high, the dissociation is easy, the cost is relatively low, a vertical structure is easily made, the P type doping is easy, and the light emitting efficiency can be improved.
Description
Technical field
The present invention relates to LED technology field, the blue-ray LED epitaxial structure and growing method for particularly growing on gaas substrates.
Background technology
With blue light GaN base LED applications more and more extensively, brightness of the people to blue light GaN base LED is focused more on, and LED researchers develop blue-ray LED by adjusting patterned sapphire substrate specifications, Si substrates, SiC, ZnO in recent years.Purpose is reduces cost and improves epitaxial crystal quality, so as to promote the fast development of blue-ray LED.
Most blue-ray LEDs are the Si Growns in Sapphire Substrate, SiC substrate and recent development in the prior art.
Traditional blue light GaN base LED epitaxial structure as shown in figure 1, be followed successively by from top to bottom：The cushion 2 of patterned sapphire substrate 1, AlN, U-shaped GaN layer 3, N-type GaN layer 4, active layer 5, p-type AlxGa1-xN electronic barrier layers 6 and p-type GaN layer 7.Prior art application it is more be first to have plated cushion on a sapphire substrate, with improve production efficiency, reduce holistic cost.But itself is expensive, therefore cost reduction amplitude is little.Meanwhile, manufacture craft is relatively difficult in terms of vertical stratification, and p-type doping concentration is than relatively low.
The content of the invention
For above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of blue-ray LED epitaxial structure for growing on gaas substrates.It uses GaAs substrates, with quality is high, legibility from and cost compare relatively low the characteristics of, and the vertical stratification that is easy to do, be easy to p-type doping, light extraction efficiency can be improved.
In order to reach foregoing invention purpose, technical scheme is realized as follows：
A kind of blue-ray LED epitaxial structure for growing on gaas substrates, it includes substrate, cushion, U-shaped GaN layer, N-type GaN layer, active area, electronic barrier layer and p-type GaN layer successively from bottom to up.It is structurally characterized in that the substrate is GaAs substrates, and the cushion includes ZnO buffer and the metal nitride cushion being grown in ZnO buffer, and the U-shaped GaN layer includes U1 types GaN layer, Bragg reflecting layer and U2 type GaN layers successively from bottom to up.
In above-mentioned blue-ray LED epitaxial structure, the growth thickness of the ZnO buffer is 5-30nm, and growth temperature is 500-800 °.
In above-mentioned blue-ray LED epitaxial structure, the thickness of the metal nitride cushion is 5 ~ 30nm, and growth temperature is 500-800 °, and metal nitride cushion is any one in AlN cushions, GaN cushions or AlGaN cushions.A buffering can be provided for growth GaN material, reduce certain stress.
In above-mentioned blue-ray LED epitaxial structure, the thickness of the U1 types GaN layer is 1um ~ 5um, and growth temperature is 900-1200 degree.First preferable intrinsic semiconductor of crystal mass is provided.
In above-mentioned blue-ray LED epitaxial structure, the Bragg reflecting layer is superlattices GaN
/ AlGaN, the superlattices GaN/AlGaN are GaN layer and AlGaN layer alternating growth, and growth cycle number is 3-20, and wherein GaN thickness is 1-50nm, and AlGaN thickness is 1-50nm, and the Al components of AlGaN are 0.2 ~ 0.6.The growth temperature of the Bragg reflecting layer is in 900-1200 degree.Bragg reflecting layer is mainly the downward light of reflection active area, reduces absorption of the GaAs substrates to light, improves brightness.
In above-mentioned blue-ray LED epitaxial structure, the thickness of the U2 types GaN layer is 1-5um, and growth temperature is in 900-1200 degree.Second preferable intrinsic semiconductor of crystal mass is provided.
The present invention can directly do vertical stratification as a result of said structure by GaAs substrates, increase lighting area.By ZnO and AlN cushions reduction GaAs substrates and the lattice match of GaN material, crystal mass is improved.Secondly, GaAs substrates can obtain p-type doping concentration higher, so as to lift the combined efficiency of wave function, and then obtain brightness higher.Blue-ray LED epitaxial structure is grown on gaas substrates, reduces the cost of production blue-ray LED, meanwhile, contribute to the exploitation of vertical stratification, obtain p-type doping concentration higher.
The present invention will be further described with reference to the accompanying drawings and detailed description.
Brief description of the drawings
Fig. 1 is LED epitaxial structure schematic diagram in the prior art；
Fig. 2 is the epitaxial structure schematic diagram that the present invention grows blue-ray LED on gaas substrates.
Specific embodiment
Referring to Fig. 2, the blue-ray LED epitaxial structure that the present invention grows on gaas substrates includes substrate 1, cushion 2, U-shaped GaN layer 3, N-type GaN layer 4, active area 5, electronic barrier layer 6 and p-type GaN layer 7 successively from bottom to up.Substrate 1 is GaAs substrates, and cushion 2 includes ZnO buffer 21 and the metal nitride cushion 22 being grown in ZnO buffer 21.U-shaped GaN layer 3 includes U1 types GaN layer 31, Bragg reflecting layer 33 and U2 types GaN layer 32 successively from bottom to up.The growth thickness of ZnO buffer 21 is 5-30nm, and growth temperature is 500-800 °.The thickness of metal nitride cushion 22 is 5 ~ 30nm, and growth temperature is 500-800 °, and metal nitride cushion 22 is any one in AlN cushions, GaN cushions or AlGaN cushions.The thickness of U1 types GaN layer 31 is 1um ~ 5um, and growth temperature is 900-1200 degree.Bragg reflecting layer 33 is superlattices GaN/AlGaN, superlattices GaN/the AlGaN is GaN layer and AlGaN layer alternating growth, growth cycle number is 3-20, wherein GaN thickness is 1-50nm, AlGaN thickness is 1-50nm, the Al components of AlGaN are 0.2 ~ 0.6, and the growth temperature of the Bragg reflecting layer 33 is in 900-1200 degree.The thickness of U2 types GaN layer 32 is 1-5um, and growth temperature is in 900-1200 degree.
The specific growth pattern that the present invention grows blue-ray LED epitaxial structure on gaas substrates is comprised the following steps：
Embodiment one
（1）First, the preparation method of epitaxial structure is that high-temperature baking is carried out in MOCVD reacting furnaces, the residual impurity on the surface of removal GaAs substrates 1.
（2）Temperature is adjusted on the GaAs substrates 1 between 500 DEG C, growth layer of ZnO cushion 21, growth thickness is 5nm.
（3）The growing AIN cushion 22 in ZnO buffer 21,500 ° of temperature, growth thickness is 5nm.
（4）Grow U1 types GaN layer 31 on AlN cushions 22, between 900 DEG C, growth U1 types GaN layer 31 grows about 10min to adjustment temperature, and thickness is 1um.
（5）Superlattices GaN/AlGaN Bragg reflecting layers 33 are grown in U1 types GaN layer 31, its periodicity is 3, wherein GaN thickness is 1nm, AlGaN thickness is 1nm, and at 900 degree, the Al components of AlGaN are 0.6 to growth temperature.
（6）Grow U2 types GaN layer 32 on superlattices GaN/AlGaN Bragg reflecting layers 33, between 900 DEG C, growth U2 types GaN layer 32 grows about 10min to adjustment temperature, and thickness is 1um.
Embodiment two
（1）First, the preparation method of epitaxial structure is that high-temperature baking is carried out in MOCVD reacting furnaces, the residual impurity on the surface of removal GaAs substrates 1.
（2）Temperature is adjusted on the GaAs substrates 1 between 600 DEG C, growth layer of ZnO cushion 21, growth thickness is 10nm.
（3）The growing AIN cushion 22 in ZnO buffer 21,600 ° of temperature, growth thickness is 10nm.
（4）Grow U1 types GaN layer 31 on AlN cushions 22, between 1000 DEG C, growth U1 types GaN layer 31 grows about 20min to adjustment temperature, and thickness is 2um.
（5）Superlattices GaN/AlGaN Bragg reflecting layers 33 are grown in U1 types GaN layer 31, its periodicity is 3, wherein GaN thickness is 2nm, AlGaN thickness is 2nm, and at 1000 degree, the Al components of AlGaN are 0.4 to growth temperature.
（6）Grow U2 types GaN layer 32 on superlattices GaN/AlGaN Bragg reflecting layers 33, between 1000 DEG C, growth U2 types GaN layer 32 grows about 20min to adjustment temperature, and thickness is 2um.
Embodiment three
（1）First, the preparation method of epitaxial structure is that high-temperature baking is carried out in MOCVD reacting furnaces, the residual impurity on the surface of removal GaAs substrates 1.
（2）Temperature is adjusted on the GaAs substrates 1 between 600 DEG C, growth layer of ZnO cushion 21, growth thickness is 15nm.
（3）The growing AIN cushion 22 in ZnO buffer 21,700 ° of temperature, growth thickness is 15nm.
（4）Grow U1 types GaN layer 31 on AlN cushions 22, between 1100 DEG C, growth U1 types GaN layer 31 grows about 30min to adjustment temperature, and thickness is 3um.
（5）Superlattices GaN/AlGaN Bragg reflecting layers 33 are grown in U1 types GaN layer 31, its periodicity is 5, wherein GaN thickness is 2nm, AlGaN thickness is 2nm, and at 1100 degree, the Al components of AlGaN are 0.3 to growth temperature.
（6）Grow U2 types GaN layer 32 on superlattices GaN/AlGaN Bragg reflecting layers 33, between 1100 DEG C, growth U2 types GaN layer 32 grows about 30min to adjustment temperature, and thickness is 3um.
Example IV
（1）First, the preparation method of epitaxial structure is that high-temperature baking is carried out in MOCVD reacting furnaces, the residual impurity on the surface of removal GaAs substrates 1.
（2）Temperature is adjusted on the GaAs substrates 1 between 700 DEG C, growth layer of ZnO cushion 21, growth thickness is 20nm.
（3）The growing AIN cushion 22 in ZnO buffer 21,800 ° of temperature, growth thickness is 20nm.
（4）Grow U1 types GaN layer 31 on AlN cushions 22, between 1100 DEG C, growth U1 types GaN layer 31 grows about 50min to adjustment temperature, and thickness is 4um.
（5）Superlattices GaN/AlGaN Bragg reflecting layers 33 are grown in U1 types GaN layer 31, its periodicity is 10, wherein GaN thickness is 2nm, AlGaN thickness is 2nm, and at 1100 degree, the Al components of AlGaN are 0.2 to growth temperature.
（6）Grow U2 types GaN layer 32 on superlattices GaN/AlGaN Bragg reflecting layers 33, between 1100 DEG C, growth U2 types GaN layer 32 grows about 30min to adjustment temperature, and thickness is 3um.
Embodiment five
（1）First, the preparation method of epitaxial structure is that high-temperature baking is carried out in MOCVD reacting furnaces, the residual impurity on the surface of removal GaAs substrates 1.
（2）Temperature is adjusted on the GaAs substrates 1 between 800 DEG C, layer of ZnO cushion is grown, growth thickness is 30nm.
（3）The growing AIN cushion 22 in ZnO buffer 21,700 ° of temperature, growth thickness is 30nm.
（4）Grow U1 types GaN layer 31 on AlN cushions 22, between 1200 DEG C, growth U1 types GaN layer 31 grows about 50min to adjustment temperature, and thickness is 5um.
（5）Superlattices GaN/AlGaN Bragg reflecting layers 33 are grown in U1 types GaN layer 22, its periodicity is 10, wherein GaN thickness is 2nm, AlGaN thickness is 2nm, and at 1200 degree, the Al components of AlGaN are 0.2 to growth temperature.
（6）Grow U2 types GaN layer 32 on superlattices GaN/AlGaN Bragg reflecting layers 33, between 1200 DEG C, growth U2 types GaN layer 32 grows about 50min to adjustment temperature, and thickness is 5um.
Embodiment six
（1）First, the preparation method of epitaxial structure is that high-temperature baking is carried out in MOCVD reacting furnaces, the residual impurity on the surface of removal GaAs substrates 1.
（2）Temperature is adjusted on the GaAs substrates 1 between 800 DEG C, growth layer of ZnO cushion 21, growth thickness is 30nm.
（3）The growing AIN cushion 22 in ZnO buffer 21,700 ° of temperature, growth thickness is 30nm.
（4）Grow U1 types GaN layer 31 on AlN cushions 22, between 1200 DEG C, growth U1 types GaN layer 31 grows about 50min to adjustment temperature, and thickness is 5um.
（5）Superlattices GaN/AlGaN Bragg reflecting layers 33 are grown in U1 types GaN layer 31, its periodicity is 20, wherein GaN thickness is 50nm, AlGaN thickness is 50nm, and at 900 degree, the Al components of AlGaN are 0.2 to growth temperature.
（6）Grow U2 types GaN layer 32 on superlattices GaN/AlGaN Bragg reflecting layers 33, adjustment temperature grows U2 type GaN layers between 1200 DEG C, grows about 50min, and thickness is 5um.
The above, specific embodiment only of the invention, however it is not limited to other embodiments of the present invention, within all category technology path principles of the invention, any obvious replacement or improvement done all should belong within protection scope of the present invention.
Claims (6)
1. a kind of blue-ray LED epitaxial structure for growing on gaas substrates, it includes substrate successively from bottom to up（1）, cushion（2）, U-shaped GaN layer（3）, N-type GaN layer（4）, active area（5）, electronic barrier layer（6）With p-type GaN layer（7）, it is characterised in that：The substrate（1）It is GaAs substrates, the cushion（2）Including ZnO buffer（21）Be grown in ZnO buffer（21）On metal nitride cushion（22）, the U-shaped GaN layer（3）Include U1 type GaN layers successively from bottom to up（31）, Bragg reflecting layer（33）With U2 type GaN layers（32）.
2. the blue-ray LED epitaxial structure for growing on gaas substrates according to claim 1, it is characterised in that：The ZnO buffer（21）Growth thickness be 5-30nm, growth temperature be 500-800 °.
3. the blue-ray LED epitaxial structure for growing on gaas substrates according to claim 1 or claim 2, it is characterised in that：The metal nitride cushion（22）Thickness be 5 ~ 30nm, growth temperature be 500-800 °, metal nitride cushion（22）For in AlN cushions, GaN cushions or AlGaN cushions any one.
4. the blue-ray LED epitaxial structure for growing on gaas substrates according to claim 3, it is characterised in that：The U1 types GaN layer（31）Thickness be 1um ~ 5um, growth temperature be 900-1200 degree.
5. the blue-ray LED epitaxial structure for growing on gaas substrates according to claim 4, it is characterised in that：The Bragg reflecting layer（33）It is superlattices GaN/AlGaN, the superlattices GaN/AlGaN is GaN layer and AlGaN layer alternating growth, and growth cycle number is 3-20, wherein GaN thickness is 1-50nm, AlGaN thickness is 1-50nm, and the Al components of AlGaN are 0.2 ~ 0.6, the Bragg reflecting layer（33）Growth temperature in 900-1200 degree.
6. the blue-ray LED epitaxial structure for growing on gaas substrates according to claim 5, it is characterised in that：The U2 types GaN layer（32）Thickness be 1-5um, growth temperature is in 900-1200 degree.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101640241A (en) * | 2009-09-08 | 2010-02-03 | 山东华光光电子有限公司 | High light-extracting rate LED chip on SiC substrate and preparation method thereof |
| CN101651176A (en) * | 2008-08-12 | 2010-02-17 | 昆山中辰硅晶有限公司 | Method for manufacturing semiconductor optoelectronic element and method for recovering substrate in manufacturing process |
| CN104167476A (en) * | 2013-05-20 | 2014-11-26 | 南通同方半导体有限公司 | Light-emitting diode structure capable of reducing blue-light LED defect density |
| CN204809249U (en) * | 2015-07-27 | 2015-11-25 | 南通同方半导体有限公司 | Blue light LED epitaxial structure of growing on gaAs substrate |
-
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- 2015-07-27 CN CN201510445284.XA patent/CN106711303A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101651176A (en) * | 2008-08-12 | 2010-02-17 | 昆山中辰硅晶有限公司 | Method for manufacturing semiconductor optoelectronic element and method for recovering substrate in manufacturing process |
| CN101640241A (en) * | 2009-09-08 | 2010-02-03 | 山东华光光电子有限公司 | High light-extracting rate LED chip on SiC substrate and preparation method thereof |
| CN104167476A (en) * | 2013-05-20 | 2014-11-26 | 南通同方半导体有限公司 | Light-emitting diode structure capable of reducing blue-light LED defect density |
| CN204809249U (en) * | 2015-07-27 | 2015-11-25 | 南通同方半导体有限公司 | Blue light LED epitaxial structure of growing on gaAs substrate |
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