CN204668283U - Chip processing device - Google Patents
Chip processing device Download PDFInfo
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- CN204668283U CN204668283U CN201520390498.7U CN201520390498U CN204668283U CN 204668283 U CN204668283 U CN 204668283U CN 201520390498 U CN201520390498 U CN 201520390498U CN 204668283 U CN204668283 U CN 204668283U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The utility model relates to chip processing device, and it comprises: support, and wafer is rotated with the state be placed; Nozzle, for more than one the fluid in the surperficial jet cleaning liquid and rinsing liquid of above-mentioned wafer; And nozzle governing portion, for regulating more than in the injection direction of said nozzle, jetting height, expulsion pressure and translational speed, thus, provide the chip processing device of the treatment effeciency of the wafer per hour improving above-mentioned chip processing device.
Description
Technical field
The utility model relates to chip processing device, in more detail, relates to the chip processing device of the cleaning and rinsing operation be used in for the wafer completing chemical-mechanical polishing process.
Background technology
Usually, chemico-mechanical polishing (Chemical Mechanical Polishing; CMP) operation is considered to a kind of and carries out relative rotation by what make to have polishing layer between wafer with polishing plate for the wafer etc. making semiconductor, thus carries out the standard procedure of polishing to the surface of wafer.
Because chemical-mechanical polishing process is to be close to the state of polishing pad by the burnishing surface of wafer W, carry out polishing by mechanism and chemical action, therefore, the burnishing surface of wafer W will become the state being attached with a lot of foreign matters comprising polishing particle.
Thus, the wafer W terminating chemical-mechanical polishing process will carry out matting, and uses the cleaning shown in Fig. 1 and Fig. 2 and rinsing device.That is, under wafer W being placed on the state of carrying out the support 10 be connected using CD-ROM drive motor and rotating shaft 12 as medium, making support 10 High Rotation Speed, while from nozzle 20 jet cleaning liquid or rinsing liquid, and carry out cleaning and rinsing process.
That is, as shown in Figure 2, nozzle 20 is fixed on the end of the arm 31 carrying out crankmotion by the angle of specifying, thus carries out mobile 20d according to the crankmotion of arm 31, and to the surperficial jet cleaning liquid of wafer W or rinsing liquid.Now, because wafer W also rotates 10r with the state being fixed on support 10, therefore, the liquid sprayed from nozzle 20 will arrive the whole surface of wafer W.
But, although wafer W is from pivot O radius length position P1 relatively far apart, the angular speed of P2 is identical, but be directly proportional to radius length, thus linear velocity is very fast, therefore, if nozzle 20 is undertaken moving back and forth 20d by the radial direction of the speed of specifying to wafer W, and to the surperficial jet cleaning liquid of wafer W or rinsing liquid 20a, the cleaning fluid then sprayed from nozzle 20 or rinsing liquid arrive 10s wafer W with uniform form, therefore, be separated by compared with less primary importance P1 with the center O radius length from wafer W, from the center O radius length second place P2 relatively far apart of wafer W, time of contact or the Exposure of cleaning fluid or rinsing liquid are less, thus the problem of the cleaning efficiency had in the radius Outboard Sections of reduction wafer W or rinse efficiency.
Moreover, even if when the specific part foreign matter 55 of wafer W is concentrated locally, the pattern that nozzle 20 only rests on along specifying simply moves back and forth, therefore, not only there is the problem that cannot detect foreign matter 55 and whether be separated from wafer W, and namely existence allows to detect, and also needs the problem of removal foreign matter 55 time grown very much.
Utility model content
The utility model proposes to solve problem as above, the purpose of this utility model is, carries out cleaner and tidier cleaning or rinsing in the short period of time to the radius length region relatively far apart (fringe region) of the wafer that have passed through chemical-mechanical polishing process.
Especially, the purpose of this utility model is, even if make linear velocity become faster because the radius length of being separated by from the center of wafer to radial direction is elongated, also guarantee the time contacted between the surface of wafer and rinsing liquid or cleaning fluid fully, thus within the short time, perform cleaner cleaning and rinsing operation.
Further, the utility model residues in the foreign matter on the surface of wafer by detecting, and improves cleaning and rinsing in the short period of time and concentrates the efficiency having the region of foreign matter locally.
In order to reach above-mentioned purpose, the utility model provides chip processing device, processes, it is characterized in that, comprising: support to the wafer that have passed through chemical-mechanical polishing process, and wafer is rotated with the state be placed; Nozzle, for the surperficial inject process fluid to above-mentioned wafer; And nozzle governing portion, for regulating more than in the injection direction of said nozzle, jetting height, expulsion pressure and translational speed.
This is in order under the state that wafer is carried out High Rotation Speed with the state being fixed on support, carry out in the process of high-pressure injection in order to rinsing or cleaning to cleaning fluid or the fluid such as rinsing liquid or drying gas, the nozzle governing portion regulating Fluid injection height and injection direction by the rotary speed of different wafers is set, thus within the time of formulating, even and clean cleaning can be carried out on the whole surface of wafer.
At this, multiple said nozzle can be configured in the bar extended to the direction with radial composition in long mode relative to the wafer together carrying out High Rotation Speed with support, thus apply, the nozzle that also can be configured to minority moves to the direction with radial composition relative to wafer, and sprays fluid to the surface of wafer.
No matter be above-mentioned any structure, be adjusted to,
Relative to the first spray angle, second spray angle is less, wherein, above-mentioned first spray angle be said nozzle be separated by the center apart from above-mentioned polishing pad the first distance position, namely primary importance spray fluid time angle with respect to the horizontal plane, above-mentioned second spray angle be said nozzle be separated by the center apart from above-mentioned polishing pad be greater than above-mentioned first distance position, namely the second place spray fluid time angle with respect to the horizontal plane.
Like this, to be separated by the farther second place from the pivot radius length of wafer being positioned at, to tilt injection fluid with lower spray angle, thus in the second place, broadly guide the area contacted from the fluid of nozzle ejection and the surface of wafer, thus, even if owing to making relatively far apart to become the second place faster according to the linear velocity rotated with pivot, also the fluid of nozzle can be made to contact more fully, cause can maintain the level be equal to primary importance cleaning, rinsing or drying efficiency.In this way, in the whole surface of wafer, independently can supply for cleaning or the fluid of rinsing and drying to wafer with the difference of linear velocity, thus the effect of the treatment process efficiency that can improve wafer can be obtained.
On the other hand, said nozzle intermittently can make spray angle change relative to primary importance and the second place, but according to another example of the present utility model, said nozzle can between primary importance and said second position during movement, spray angle changes continuously, thus can make up the difference according to the linear velocity to radius distance at the center from wafer exactly.
On the other hand, can be configured to, relative to the first translational speed, second translational speed is slower, wherein, above-mentioned first translational speed be said nozzle the center apart from above-mentioned polishing pad be separated by the first distance position, i.e. primary importance on the speed of movement, above-mentioned second translational speed be said nozzle be separated by the center apart from above-mentioned polishing pad be greater than above-mentioned first distance position, the i.e. second place on the speed of movement.
Like this, to be separated by the farther second place from the pivot radius length of wafer being positioned at, nozzle moves in the mode more slowly with radial composition, thus the time contacted with the surface of wafer on the second place from the fluid of nozzle ejection can be guided longlyer, even if thus owing to making according to the linear velocity the rotated second place faster relatively far apart with pivot, also can make to contact from the fluid of nozzle ejection by the size that the amount of the primary importance slow with on-line velocity is identical, thus the cleaning of the level be equal to primary importance can be maintained, rinsing or drying efficiency.In this way, independently can supply to the surface of wafer for cleaning or the fluid of rinsing and drying with the difference of linear velocity, thus the effect of the treatment process efficiency that can improve wafer can be obtained.
On the other hand, the translational speed of said nozzle can only intermittently change to primary importance and the second place, but according to another example of the present utility model, said nozzle is between primary importance and said second position during movement, translational speed changes continuously, thus can make up the difference from the center of wafer to the linear velocity of radius distance exactly.
And, be adjusted to, relative to the first jetting height, second jetting height is higher, wherein, above-mentioned first jetting height is that said nozzle is separated by the center apart from above-mentioned polishing pad the height that position, the i.e. primary importance of the first distance carry out spraying, and above-mentioned second jetting height is that said nozzle is separated by the center apart from above-mentioned polishing pad the height that the position, the i.e. second place that are greater than above-mentioned first distance carry out spraying.
Like this, to be separated by the farther second place from the pivot of wafer being positioned at, fluid is sprayed in higher position, thus in the second place, broadly guide the area contacted from the fluid of nozzle ejection and the surface of wafer, thus, even if owing to making relatively far apart to become the second place faster according to the linear velocity rotated with pivot, also the fluid of nozzle can be made to contact more fully, thus the cleaning of the level be equal to primary importance, rinsing or drying efficiency can be maintained.In this way, in the whole surface of wafer, independently can supply for cleaning or the fluid of rinsing and drying to wafer with the difference of linear velocity, thus the effect of the treatment process efficiency that can improve wafer can be obtained.
On the other hand, said nozzle intermittently can make spray angle change relative to primary importance and the second place, but according to another example of the present utility model, said nozzle can between primary importance and said second position during movement, spray angle changes continuously, thus can make up the difference from the center of wafer to the linear velocity of radius distance exactly.
And, also following state can be kept: relative to the first expulsion pressure, second expulsion pressure is larger, wherein, above-mentioned first expulsion pressure is the expulsion pressure that said nozzle is separated by position, the i.e. primary importance of the first distance at the center apart from above-mentioned polishing pad, and above-mentioned second expulsion pressure is the expulsion pressure that said nozzle is separated by the position, the i.e. second place that are greater than above-mentioned first distance at the center apart from above-mentioned polishing pad.
Like this, to be separated by the farther second place from the pivot of wafer being positioned at, fluid is sprayed with higher expulsion pressure, thus in the second place, guide the strength on the surface of the fluid-percussion wafer from nozzle ejection larger, thus, even if owing to making with pivot the second place that becomes faster according to the linear velocity rotated, time of contact is less relatively far apart, also by more improving the treatment effeciency based on the fluid from nozzle ejection, cleaning, rinsing or drying efficiency is made to maintain the level equal with primary importance.In this way, in the whole surface of wafer, independently can supply for cleaning or the fluid of rinsing and drying to wafer with the difference of linear velocity, thus the effect of the treatment process efficiency that can improve wafer can be obtained.
On the other hand, the expulsion pressure of said nozzle can only intermittently change to primary importance and the second place, but according to another example of the present utility model, said nozzle is between primary importance and said second position during movement, expulsion pressure changes continuously, thus can make up the difference from the center of wafer to the linear velocity of radius distance exactly.
This specification and " radial direction " described in utility model protection scope and term are similarly defined as; not only represent from the pivot of wafer laterally away from or close direction composition, and represent and from the pivot of wafer laterally away from or close direction composition together comprise the direction composition with circumferencial direction composition.
According to the utility model, effect favourable as follows can be obtained: carry out in the state of High Rotation Speed under the state that wafer is fixed on support, in order to rinsing or cleaning, cleaning fluid or the fluid such as rinsing liquid or drying gas are carried out in the process of high-pressure injection, regulate Fluid injection height and injection direction by the different rotary speed of wafer, thus within the time of formulating, even and clean cleaning can be carried out on the surface of wafer.
Namely, the utility model can obtain following effect: with radius distance from compared with the shorter primary importance in the center of above-mentioned polishing pad, on the second place that radius distance is longer from the center of above-mentioned polishing pad, nozzle is by reducing for spraying the spray angle of fluid or maintaining jetting height higher, and guarantee that the area of the fluid contacted with the surface of wafer is to guarantee the linear velocity difference of the radius length of polishing pad, thus can in the whole surface of wafer, independently supply to wafer with linear velocity and be used for cleaning or rinsing, dry fluid, the treatment process efficiency of wafer can be improved.
And, the utility model can obtain following effect: with radius distance from compared with the shorter primary importance in the center of above-mentioned polishing pad, on the second place that radius distance is longer from the center of above-mentioned polishing pad, by maintaining the translational speed of the lower nozzle for spraying fluid, and by guaranteeing the time of contact of the fluid contacted with surface that is wafer that is that more grow, make up the difference of the linear velocity of the radius length of polishing pad, thus can in the whole surface of wafer, independently supply to wafer with linear velocity and be used for cleaning or rinsing, dry fluid, the treatment process efficiency of wafer can be improved.
And, the utility model can obtain following effect: with radius distance from compared with the shorter primary importance in the center of above-mentioned polishing pad, on the second place that radius distance is longer from the center of above-mentioned polishing pad, by maintaining the expulsion pressure of the higher nozzle for spraying fluid, and by increasing the hitting power of the fluid contacted with the surface of wafer, make up caused by the difference of the linear velocity of the radius length of polishing pad rinsing, cleaning and drying efficiency, thus improve the treatment process efficiency of wafer.And, the utility model can obtain following effect: nozzle can make in spray angle, expulsion pressure, jetting height and translational speed one intermittently to change to primary importance and the second place, but according to another example of utility model, during said nozzle can move between primary importance and said second position, make more than in spray angle, expulsion pressure, jetting height and translational speed one to change continuously, thus the difference from the center of wafer to the linear velocity of radius distance can be made up exactly.
It is the matting of cleaning wafer or the substrate as handling object thing that this specification and " process " described in utility model protection scope and term are similarly defined as, rinsing process wafer or substrate being carried out to rinsing, wafer or substrate carried out to dry drying process and to the general designation needing to implement for all process steps of the operation of delivering fluids to wafer or substrate in addition.
Accompanying drawing explanation
Fig. 1 is the figure of the processing unit illustrated for cleaning common wafer.
Fig. 2 arrives the figure that is described of state for the cleaning fluid of the wafer to the chip processing device based on Fig. 1.
Fig. 3 is the stereogram of the structure of the chip processing device that an embodiment of the present utility model is shown.
Fig. 4 is the front view of Fig. 3.
Fig. 5 is the vertical view of the first processing mode of the chip processing device that Fig. 3 is shown.
Fig. 6 a is the vertical view of the second processing mode illustrated based on chip processing device.
The front view of the structure that Fig. 6 b embodies for the second processing mode shown in Fig. 6 a.
Fig. 7 a is the vertical view of the first processing mode of the chip processing device illustrated based on Fig. 3.
The front view of the structure that Fig. 7 b embodies for the 3rd processing mode shown in Fig. 7 a.
Fig. 8 is the precedence diagram of the structure of embodiment the 3rd processing mode illustrated successively based on the foreign bodies detection of wafer.
The vertical view of the structure that Fig. 9 a embodies for the 4th processing mode shown in Fig. 8.
The front view of the structure that Fig. 9 b embodies for the 4th processing mode shown in Fig. 9 a.
Figure 10 a is the longitudinal sectional view of the structure that the nozzle that can be applicable to chip processing device of the present utility model is shown.
Figure 10 b is the sketch of the structure of the nozzle that another form that can be applicable to chip processing device of the present utility model is shown.
Figure 11 is the stereogram that the nozzle assembly that can be applicable to chip processing device of the present utility model is shown.
Reference numeral
W: wafer 110: support
120,120': nozzle 129: fixed lever
130: guide member 131: lead arm
132: vertical member P: fluid supply unit
Embodiment
Below, be described in detail with reference to the chip processing device 100 of accompanying drawing to an embodiment of the present utility model.Only, in the process that the utility model is described, give same or similar Reference numeral for known function or structure, and in order to definitely main idea of the present utility model, the explanation to these known functions or structure will be omitted.
As shown in drawings, the chip processing device 100 of an embodiment of the present utility model comprises: support 110, and wafer W is rotated with the state be placed; Nozzle 120, for more than one the fluid be positioned in the surperficial jet cleaning liquid of wafer W of support 110 or rinsing liquid or dry gas; Nozzle governing portion, more than one for regulating in the injection direction of nozzle 120, jetting height, expulsion pressure and translational speed; Foreign bodies detection portion 140,140 ', for detecting the foreign matter distribution of wafer W; And control part 150, for injection conditions and the position of Control Nozzle 120.
Above-mentioned support 110 can be configured to suck and fix the state of the reverse side of the wafer performing treatment process and together rotate with wafer W, and, as shown in Figure 4, can be configured at the pin by the edge for supporting wafers W, under the state making wafer W be fixed, together rotate with wafer W.
For this reason, support 110 and the rotating shaft 112 together rotary actuation carrying out rotary actuation by CD-ROM drive motor (not shown).The blocking-up wall 55 for preventing from flowing into from outside foreign matter in cleaning and rinsing operation can be formed around support 110.
Said nozzle adjusting portion comprises: fluid supply unit P, comes optionally to supply the fluid 120a such as cleaning fluid, rinsing liquid and dry gas to nozzle 120 by regulating quantity delivered hourly or expulsion pressure; Guide member 130, is provided with nozzle 120 at guide member 130, and guide sections part 130 is for the position of moving nozzle 120; And nozzle inclination adjusting portion R, regulate the posture of the nozzle 120 relative to guide member 130 by rotating 120r, thus regulate the injection direction of fluid.
Wherein, fluid supply unit P comprises: pipe arrangement, extends to nozzle 120 from each apotheca of cleaning fluid, rinsing liquid, nitrogen or dry air; And flow valve, be arranged at pipe arrangement.Thus, in the pipe arrangement be connected with nozzle 120, the optionally flow valve of the open pipe arrangement be connected with the fluid reservoir that will spray, and by regulating degree of opening, regulated the kind of the emitted dose hourly of the fluid sprayed from nozzle 120, expulsion pressure and injection fluid by fluid supply unit P.
As shown in Figures 3 and 4, guide member 130 comprises: lead arm 131, is provided with nozzle 120; And vertical member 132, for regulating the height of lead arm 131.
Lead arm 131 is formed as extending in long way towards the direction of the radial composition with wafer W, and, relative to vertical member 132, centered by hinge axis 131x, rotatably arrange by rotary driving part M.Thus, when nozzle 120 only arranges one, can move back and forth to the direction of the radial composition with the wafer W of carrying out rotation in support 110, and fluid 120a can be sprayed to the whole surface of wafer W.Further, lead arm 131 is formed and along the bearing of trend of lead arm 131, can makes the approach (such as, track) of nozzle 120 movement, thus nozzle 120 can be made lightheartedly to carry out moving back and forth 120x along the bearing of trend of lead arm 131.Such as, the move mode of nozzle 120 can be presented as with the principle of linear motor the coil carrying out Current Control with permanent magnet.
Vertical member 132, by being formed at the first vertical member 132a carrying out each other moving up and down and the second vertical member 132b, can regulate the total height of vertical member 132 relative to the distance that the second vertical member 132b carries out moving up and down 132y according to the first vertical member 132a.Such as, the first vertical member 132a can be configured to move up and down with the principle of pneumatics or linear motor relative to the second vertical member 132b.The jetting height of the nozzle 120 being arranged at lead arm 131 can be regulated thus.
Nozzle inclination adjusting portion R makes nozzle 120 relative to lead arm 131 to rotate 120r, thus regulates the posture of nozzle 120.Such as, relative to the moving-member carrying out movement along the approach (such as, track) being located at lead arm 131, the form making nozzle 120 rotary actuation can be formed as.Thus, the fluid 120a sprayed from nozzle 120 relative to the plate face of wafer W can arrive to vertical direction, but the direction that also can tilt relative to gravity direction arrives.
Said nozzle 120 to liquid such as the surperficial jet cleaning liquid of the wafer W of carrying out chemical-mechanical polishing process or rinsing liquids, thus performs matting and the rinsing process of wafer W in the mode of high pressure.According to circumstances, said nozzle 120 sprays the dry gas such as nitrogen or dry air in the mode of high pressure to the surface of wafer W, thus the surface of drying crystal wafer W.
For this reason, nozzle 120,120' can be formed in a kind of mode of spraying the mist, dry air etc. of the liquids and gases such as mixture, cleaning fluid of the rinsing liquid, cleaning fluid, pure water, steam, steam and the liquid that supply from fluid supply unit P, but as shown in Figure 10 a and Figure 10 b, can be sprayed in the mode mixing these liquids and gases by a nozzle 120,120'.
Such as, as shown in Figure 10 a, nozzle 120, 120 ' the gas supply part 121 that the path 121a of the gas 66 such as dry air or nitrogen had for supplying high pressure can be set at central portion, the liquid supply unit 121 of the path 121a had for supplying the liquid such as cleaning fluid or rinsing liquid 77 is provided with around gas supply part 121, in the discharge opening 120e of nozzle, guide liquid 77 towards center by guiding piece 124, the mobile approach conversion 77d ' making liquid 77 is towards the direction of central portion, and meet with the gas 77d' via gas supply part 121, fluid 120a is discharged in the mist 88x mode being mixed with the liquid of droplet morphology 77p in the gas of whirlwind or eddy current form, thus more effectively can improve cleaning and the rinse efficiency of wafer W.
As another example, as shown in fig. lob, the steam produced from steam generator 91 can only spray as fluid 120a to wafer W by nozzle 120, or the steam produced from steam generator 91 with mixing and the nitrogen produced from nitrogen gas supply portion 93 spray, or only to supply from pure water supply unit 92 pure water of supply, or the two or more form that can combine in the nitrogen of the steam produced from steam generator 91, the pure water supplied from pure water supply unit 92 and supply from nitrogen gas supply portion 93 is sprayed to wafer W.
Now, the temperature of the steam sprayed maintains 60 DEG C ~ 90 DEG C, the pressure of steam maintains 0.1MPa ~ 0.32MPa, gap between the surface of wafer W and the discharge opening of nozzle 120 maintains 5mm ~ 15mm, and this residues in the slurry of wafer W, organic substance, hairbrush and silica ions aspect for utilizing the heat of steam to remove very remarkable.Especially, for use tungsten as polishing layer wafer W for, present high except foreign matter efficiency.Meanwhile, the quantity delivered of the pure water supplied from pure water supply unit 92 to mix with vapor phase is 2.4 public liters/min ~ 4.8 public liters/min, high cleaning efficiency is presented.
Mist between steam and liquid can spray from nozzle 120 with direct current form, but in order to more improve cleaning efficiency, as shown in Figure 10 a, can spray with eddy current (whirlwind) form.
Nozzle 120 can be configured to be fixed on guide member 130 in the mode of one, thus sprays fluid to wafer W, and, as shown in figure 11, also on a fixed lever 129, multiple nozzle 120' can be installed.Preferably, take diameter as the wafer of 300mm be benchmark, when lead arm 131 arranges less than three nozzle 120, nozzle 120 can be set to along being located at the approach of lead arm 131 to move 120x, and when lead arm 131 arranges more than four nozzle 120, fluid can be sprayed sufficiently uniformly to the surface of wafer, therefore, it is possible to the state being fixed on lead arm 131 with nozzle 120 by each nozzle inclination adjusting portion R1, R2 ..., R7 rotatably arranges.
Above-mentioned foreign bodies detection portion 140,140' by wafer W upper surface illumination beam or from the image in multiple angle shot, detect the distribution of foreign matter 55 of wafer W.Under the state that embodiment of the present utility model rotates in wafer W in support 110, spray fluid 120a from nozzle 120 to the surface of wafer W, therefore, as long as the distribution of foreign matter 55 detects which position being positioned at the radial direction of wafer W.
Just, although accompanying drawing is not shown, but under the state that wafer W does not rotate, by the fluid 120a that sprays from nozzle 120,120 ' to perform treatment process, therefore, when wafer W does not have rotation, by foreign bodies detection portion 140,140 ', not only can detect the radius length of wafer, and together can detect the position of circumferencial direction.
From foreign bodies detection portion 140,140' illumination beam is grasped in the process of the distribution of foreign matter, if the light beam to the surface irradiation of wafer arrives the surface of the wafer residing for foreign matter, then by the scattering in foreign matter, light accepting part cannot receiving beam, if arrive to the light beam of the surface irradiation of wafer the surface not having the wafer of foreign matter, then because of reflection completely at light accepting part receiving beam, therefore, the foreign matter distributing position on the wafer of rotation can be detected.
Further, the distribution of the foreign matter in the photographic images of shooting from foreign bodies detection portion 140,140 ' is detected by the analytical method of known photographic images.Namely, can based on the surface irradiation electron beam of the wafer W to execution treatment process or by taking the image obtained, preferably, based on the photographic images obtained from multiple angles from be bonded at wafer surface foreign matter shadow negative and positive mark detect the distributing position of foreign matter.
Like this, in treatment process, foreign matter 55 distributing position being detected wafer W by foreign bodies detection portion 140,140 ' is carried out in real time.Foreign bodies detection portion 140,140, by carrying out from the upside of wafer W the distributing position taking or detected by illumination beam foreign matter, also can be arranged at lead arm 131 to guide the crankmotion of arm 131, and detect the distributing position of foreign matter.
The information that the distributed areas of the foreign matter detected at foreign bodies detection portion 140,140' are relevant can be transmitted to control part 140.
Above-mentioned control part 150 regulates the expulsion pressure of the fluid 120a sprayed from nozzle 120,120', emitted dose hourly, jetting height and spray angle etc. according to the position of nozzle 120,120', when nozzle 120 moves 120x along lead arm 131, regulate translational speed.
And, from the foreign matter distributed areas that foreign bodies detection portion 140,140' receive, fluid 120a is sprayed with higher expulsion pressure from nozzle 120,120', if spray fluid 120a with higher expulsion pressure, but still cannot remove foreign matter, nozzle 120,120' is then made more to tilt to spray fluid 120a, thus from the surface removal foreign matter of wafer W.
Below, be described in detail with reference to first processing mode of Fig. 5 to the chip processing device 100 of the embodiment of the present utility model formed in the manner.
In carry out rotation 110r under the state that wafer W is positioned over support 110 during, primary importance P1 closer to the pivot O of wafer W rotates with identical angular speed with the second place P2 of the pivot O away from wafer W, but the radius length R2 due to second place P2 is greater than the radius length R1 of primary importance P1, therefore, the linear velocity of wafer becomes larger.
Therefore, prior art as shown in Figures 1 and 2, if carry out crankmotion under the state being fixed on the end of arm 31 to make nozzle 20, and spray fluid 120a to wafer W, then on the position of the pivot away from wafer W, and the time of contact between fluid 120a will reduce, thus there is the problem that cannot realize cleaning or rinsing process fully.
But as shown in Figure 5, in during lead arm 131 carries out crankmotion 120d, nozzle 120 moves along the bearing of trend of lead arm 131.Namely, if lead arm 131 arrives the second place P1 be close with the pivot O of wafer W, then nozzle 120 is to move to the end of lead arm 131, thus make the length L1 between the hinge axis 131x of lead arm 131 and nozzle 120 elongated, and lead arm 131 is the closer to the second place P2 of the pivot O away from wafer W, the mode that the length L2 between the hinge axis 131x of lead arm 131 and nozzle 120 shortens moves.
Like this, 120x is moved by the crankmotion 120d of parallel practice lead arm 131 and the linear reciprocation of nozzle 120, nozzle 120 is the closer to the pivot O of wafer W, radial amount of movement hourly becomes and becomes the form larger than the amount of movement hourly of circumferencial direction, nozzle 120 is the closer to the edge of wafer W, the amount of movement hourly of circumferencial direction become become specific diameter to the larger form of amount of movement hourly, therefore, from the edge of wafer W, fluid 120a can be received in longer mode from nozzle 120.
Thus, 120x is moved by the crankmotion 120d of parallel practice lead arm 131 and the linear reciprocation of nozzle 120, decay radius length R1, the linear velocity deviation V1 of R2 of wafer W, the mobile approach of the nozzle 120 of V2 can be configured for, thus, have and to the fluid 120a of the whole surface supply even amount of wafer W, and can obtain the effect of uniform treatment effeciency on the whole.
Below, be described in detail with reference to second processing mode of Fig. 6 a and Fig. 6 b to the chip processing device 100 of the embodiment of the present utility model formed in the manner.
In the chip processing device 100 of the embodiment of the present utility model formed in the manner, although nozzle 120 can by speed the moving radially to wafer W of specifying, but the translational speed 120u2 on the second place P2 of the pivot away from wafer W with more close to compared with the translational speed 120u1 on the primary importance P1 of the pivot of wafer W, can move with slower speed.That is, according to the position of nozzle 120, the rotating speed that can control the lead arm 131 relative to vertical member 132 on second place P2 is more slower than the rotating speed of the lead arm 131 relative to vertical member 120 on primary importance P1.
Like this, from wafer W pivot O with closer to the mode primary importance P1 of being separated by can compared with the translational speed 120u1 on primary importance P1 with the translational speed 120u2 of the nozzle 120 on the second place P2 of being separated by further, what be conditioned is less, therefore, even if there is the difference V1 of linear velocity in the center O away from wafer W, V2, also as shown in Figure 6 a, along with on second place P2, to the fluid 120a of wafer W supply more, by the fluid 120a of the cleaning fluid that nozzle 120 sprays etc. at the whole surface contact even amount of wafer, thus can treatment effeciency be improved.
On the other hand, guide member 130 can be configured in the mode of stage, the translational speed of nozzle be slowed down on preassigned primary importance P1 and second place P2, but in the total distance moved back and forth of nozzle 120, be directly proportional to the distance away from pivot O, the speed that the moves back and forth acceleration or deceleration lentamente of nozzle 120 can be regulated.Thus, can obtain by regulating the translational speed of nozzle 120 to decay radius length more away from the pivot O of wafer W, the effect of the deviation of more incidental linear velocity V1, V2.
And, in the chip processing device 100 of the embodiment of the present utility model formed in the manner, by guide member 130, although nozzle 120 can with identical height moving radially to wafer W, but as shown in Figure 6 b, with more close to the primary importance P1 of the pivot of wafer W jetting height Pr1 compared with, on the second place P2 of the pivot away from wafer W, at higher height Pr2 jet cleaning liquid or the fluid such as rinsing liquid or dry air 120a.
Like this, by regulating in during the lead arm 131 of guide member 130 carries out crankmotion 120d relative to vertical member 132, the distance carrying out moving up and down 132y relative to the second vertical member 132b by the first vertical member 132a performs while regulate the jetting height of nozzle 120, carries out mobile 120d '.
Like this, compared with the jetting height of being separated by nearer primary importance P1 with the pivot O from wafer W, the jetting height of the nozzle 120 on second place P2 relatively far apart can be regulated higher, thus, even if there is difference V1, the V2 of linear velocity in the center O away from wafer W, also compared with the area 120S1 ' sprayed to the surface of wafer W on primary importance P1, to wider area 120S2 ' delivering fluids 120a on second place P2, thus improve cleaning efficiency at the whole surface contact even amount of wafer.
Meanwhile, fluid supply unit P is more away from the pivot O of wafer W, more improve the expulsion pressure of the fluid 120a sprayed from nozzle 120, thus can to wider area delivering fluids 120a on second place P2, and can the supply flow rate of constant maintenance per unit area.
On the other hand, guide member 130 can regulate the jetting height of nozzle on preassigned primary importance P1 and second place P2 in the mode of stage, but in the total distance moved back and forth of nozzle 120, be directly proportional to the distance away from pivot O, the jetting height of nozzle 120 can be regulated slowly to improve or reduce.Thus, the jetting height and expulsion pressure that can obtain by regulating nozzle 120 decays radius length more away from the pivot O of wafer W, the effect of the deviation of more incidental linear velocity V1, V2.
Below, be described in detail with reference to the 3rd processing mode of Fig. 7 a and Fig. 7 b to the chip processing device 100 of the embodiment of the present utility model formed in the manner.
On the other hand, in the chip processing device 100 of the embodiment of the present utility model formed in the manner, by guide member 130, nozzle 120 can with identical posture moving radially to wafer W, but as shown in Figure 7b, by nozzle inclination adjusting portion R, with more close to the pivot of wafer W primary importance P1 compared with, with the posture jet cleaning liquid more tilted or rinsing liquid or dry air on the second place P2 of the pivot away from wafer W.
Like this, compared with injection direction ang1 on primary importance P1 close to being separated by with the pivot O from wafer W, the inclination angle ang2 of the injection direction of the nozzle 120 of being separated by farther second place P2 is carried out adjustment 120r in the mode closer to horizontal plane, even if thus there is the difference V1 of linear velocity because of the center O away from wafer W, V2, also compared with the area 120S1 sprayed to the surface of wafer W on primary importance P1, to wider area 120S2 delivering fluids 120a on second place P2, at the whole surface contact even amount of wafer, thus can cleaning efficiency be improved.
Meanwhile, fluid supply unit P is more away from the pivot O of wafer W, more improve the expulsion pressure of the fluid 120a sprayed from nozzle 120, thus can to wider area delivering fluids 120a on second place P2, and can the supply flow rate of constant maintenance per unit area.
On the other hand, guide member 130 can regulate the spray angle of nozzle on preassigned primary importance P1 and second place P2 in the mode of stage, but in the total distance moved back and forth of nozzle 120, be directly proportional to the distance away from pivot O, the form of the spray angle slowly improving or reduce nozzle 120 can be adjusted to.Thus, the jetting height and expulsion pressure that can obtain by regulating nozzle 120 decays radius length more away from the pivot O of wafer W, the effect of the deviation of more incidental linear velocity V1, V2.
Below, be described in detail with reference to the 4th processing mode of Fig. 8 to Fig. 9 b to the chip processing device 100 of the embodiment of the present utility model formed in the manner.
On the other hand, in the chip processing device 100 of the embodiment of the present utility model formed in the manner, and can perform before performing treatment process in the process for the treatment of process, the distributed areas of the foreign matter residued in wafer W can be detected by foreign bodies detection portion 140,140', and, in the region being distributed with foreign matter 55, fluid 120a can be sprayed to perform treatment process in the mode with higher cleaning force.
Particularly, before starting to perform treatment process, from be arranged in the upside of wafer W or be positioned at the foreign bodies detection portion 140 of lead arm 131,140' irradiates light or photographic images, thus detects the region (S110) that the foreign matter in wafer W distributes a lot locally.
Then, wafer W and support 110 together rotation, and be suitable for the first processing mode to more than one modes in the 3rd processing mode, and spray fluid 120a from washer jet 120 to the surface of wafer W.Now, as illustrated in fig. 9, if detect, foreign matter 55 concentrates on the first area S1 connecting the identical radius length of the primary importance P1 of being separated by from the pivot O of wafer W, be then equal to the second area S2 connecting the identical radius length of the second place P2 of being separated by further from pivot O or expulsion pressure high all the better sprays fluid 120a (S120) to primary importance P1.Thus, by from nozzle 120 with the fluid 120a that high expulsion pressure sprays, can the foreign matter 55 of integrated distribution more easily.
Within the time of specifying, as step S120, after performing treatment process or in the process of execution treatment process, whether foreign bodies detection portion 140,140 ' again detects the foreign matter 55 detected in step s 110 and is removed.
Result, if the foreign matter detected in step s 110 55 is removed neatly by the fluid 120a of high-pressure injection in the step s 120, then within the time of specifying, carry out treatment process (S140) with the first above-mentioned processing mode to more than one the compound mode in the 3rd processing mode.
If but the foreign matter 55 detected in step s 110 is not removed by the fluid 120a of high-pressure injection in the step s 120, then as shown in figure 9b, spray angle ang1, ang2 of nozzle 120 can be made to become less, the mode being more parallel direction with inclination has the fluid 120a of the first area S1 inject high pressure of foreign matter to the centralized configuration in the plate face of wafer W, thus makes foreign matter 55 come to obtain more definitely being separated removal (S130) facing to the power of front extreme direction by the plate relative to wafer W.
Within the time of specifying, as step S130, perform treatment process or perform treatment process, whether being removed while again detect by foreign bodies detection portion 140,140' the foreign matter detected after step S120.Further, any one in step S130 and step S140 is performed according to its result.
As mentioned above, the 4th processing mode of chip processing device 100 is utilized to have the fluid 120a of higher cleaning force or rinsability to the area spray that inoculation is configured with foreign matter, thus the surface more can shortening wafer W is cleaned up required scavenging period, the effect improving the treatment effeciency of wafer and the favourable of process efficiency finally can be obtained.
On the other hand, according to another execution mode of the present utility model, nozzle 120 is not formed in the mode of carrying out moving back and forth, but as shown in figure 11, at fixed lever 129, multiple nozzle 120' is set, each nozzle 120' can by each nozzle inclination adjusting portion R1, R2 ... R7 regulates spray angle 120r independently relative to fixed lever 129, and, the expulsion pressure of the fluid 120a such as cleaning fluid, rinsing liquid supplied from fluid supply unit P can be regulated.
Like this, by arranging multiple nozzle 120 at fixed lever 129, adopt away from the position of the pivot O of wafer W, more regulate inclination angle in lower mode, and improve expulsion pressure, or away from the position of the pivot O of wafer W, fixed lever 129 is arranged the form in more tilting, regulate in the method for jetting height more than one, thus, even if there is the difference of the linear velocity of the radius length of wafer W, also uniformly cleaning fluid can be supplied to the whole of wafer W, thus raising cleaning can be obtained, the effect of rinsing and drying efficiency.
Thus, the utility model can obtain following advantageous effects: under state wafer W being fixed on support 110 High Rotation Speed, more than one in the jetting height of cleaning fluid or the fluid 120a such as rinsing liquid or drying gas or spray angle, the translational speed of nozzle, expulsion pressure are regulated by nozzle governing portion in order to rinsing or cleaning, thus within the time of specifying, implement even and clean cleaning on the whole surface of wafer.And, the utility model uses steam to perform cleaning, rinsing, drying process etc. in the treatment process of wafer W, thus can obtain the slurry or the foreign matter such as hairbrush particle or silicon dioxide granule that can residue in the surface of wafer W with higher efficiency from the surface removal of wafer W.
And, the utility model can obtain following advantage: by detecting the foreign matter distribution in wafer W, to the region with a lot of foreign matter, fluid 120a is sprayed with higher expulsion pressure, or spray fluid 120a with the gradient tilted, thus within the shorter time, remove the foreign matter residuing in wafer W definitely, improve treatment effeciency.
Above; by preferred embodiment, exemplary explanation is carried out to the utility model; but the utility model is not limited to this specific embodiment; the technological thought that can propose in the utility model; particularly, in the category described in the protection range of utility model, carry out the amendment of variform, change or improvement.
Claims (15)
1. a chip processing device, processes the wafer that have passed through chemical-mechanical polishing process, it is characterized in that, comprising:
Support, makes above-mentioned wafer rotate with the state be placed;
Nozzle, for the surperficial inject process fluid to above-mentioned wafer; And
Nozzle governing portion, for regulating more than in the injection direction of said nozzle, jetting height, expulsion pressure and translational speed.
2. chip processing device according to claim 1, is characterized in that,
Said nozzle, while the radial composition along above-mentioned wafer moves, sprays fluid.
3. chip processing device according to claim 1, is characterized in that,
Multiple said nozzle is fixed on the fixed lever that the direction to the radial composition with above-mentioned wafer extends, and relative to above-mentioned fixed lever, the spray angle of said nozzle is independently adjustable.
4. the chip processing device according to any one in claims 1 to 3, is characterized in that,
Relative to the first spray angle, second spray angle is less, wherein, above-mentioned first spray angle be said nozzle be separated by the center apart from above-mentioned polishing pad the first distance position, namely primary importance spray fluid time angle with respect to the horizontal plane, above-mentioned second spray angle be said nozzle be separated by the center apart from above-mentioned polishing pad be greater than above-mentioned first distance position, namely the second place spray fluid time angle with respect to the horizontal plane.
5. chip processing device according to claim 4, is characterized in that,
Said nozzle is between above-mentioned primary importance and said second position during movement, and the spray angle of said nozzle changes continuously.
6. chip processing device according to claim 2, is characterized in that,
Relative to the first translational speed, second translational speed is slower, wherein, above-mentioned first translational speed be said nozzle the center apart from above-mentioned polishing pad be separated by the first distance position, i.e. primary importance on the speed of movement, above-mentioned second translational speed be said nozzle be separated by the center apart from above-mentioned polishing pad be greater than above-mentioned first distance position, the i.e. second place on the speed of movement.
7. chip processing device according to claim 6, is characterized in that,
Said nozzle is between above-mentioned primary importance and said second position during movement, and the translational speed of said nozzle changes continuously.
8. the chip processing device according to any one in claims 1 to 3, is characterized in that,
Relative to the first jetting height, second jetting height is higher, wherein, above-mentioned first jetting height is that said nozzle is separated by the center apart from above-mentioned polishing pad the height that position, the i.e. primary importance of the first distance carry out spraying, and above-mentioned second jetting height is that said nozzle is separated by the center apart from above-mentioned polishing pad the height that the position, the i.e. second place that are greater than above-mentioned first distance carry out spraying.
9. chip processing device according to claim 8, is characterized in that,
Said nozzle is between above-mentioned primary importance and said second position during movement, and the jetting height of said nozzle changes continuously.
10. the chip processing device according to any one in claims 1 to 3, is characterized in that,
Relative to the first expulsion pressure, second expulsion pressure is larger, wherein, above-mentioned first expulsion pressure is the expulsion pressure that said nozzle is separated by position, the i.e. primary importance of the first distance at the center apart from above-mentioned polishing pad, and above-mentioned second expulsion pressure is the expulsion pressure that said nozzle is separated by the position, the i.e. second place that are greater than above-mentioned first distance at the center apart from above-mentioned polishing pad.
11. chip processing devices according to claim 10, is characterized in that,
Said nozzle is between above-mentioned primary importance and said second position during movement, and the expulsion pressure of said nozzle changes continuously.
12. chip processing devices according to claim 1, is characterized in that,
The fluid sprayed from said nozzle is more than one cleaning fluid, rinsing liquid, pure water, steam, nitrogen and dry air.
13. chip processing devices according to claim 1, is characterized in that,
The fluid sprayed from said nozzle comprises the steam being heated to 60 DEG C ~ 90 DEG C.
14. chip processing devices according to claim 13, is characterized in that,
More than one pure water and nitrogen are comprised from the fluid of said nozzle injection, wherein, the pressure of steam is 0.1MPa ~ 0.32MPa, be 5mm ~ 15mm from the discharge opening of said nozzle to the gap of above-mentioned wafer surface, above-mentioned pure water is 2.4 public liters/min ~ 4.8 public liters/min for the quantity delivered of above-mentioned steam.
15. chip processing devices according to claim 1, is characterized in that,
The fluid sprayed from said nozzle is injected with whirlwind form.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2015-0028876 | 2015-03-02 | ||
| KR1020150028876A KR20160106257A (en) | 2015-03-02 | 2015-03-02 | Wafer treatment apparatus |
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| Publication Number | Publication Date |
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| CN204668283U true CN204668283U (en) | 2015-09-23 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105629530A (en) * | 2016-01-19 | 2016-06-01 | 京东方科技集团股份有限公司 | Cleaning device and use method thereof |
| CN109148252A (en) * | 2018-08-28 | 2019-01-04 | 德淮半导体有限公司 | Etching apparatus and crystal edge lithographic method |
| CN109671650A (en) * | 2018-12-04 | 2019-04-23 | 芯恩（青岛）集成电路有限公司 | A kind of circulating liquid formula suction nozzle, and its method for removing particle in wafer |
| CN110571175A (en) * | 2019-09-17 | 2019-12-13 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Swing arm control method, device and system and wafer processing equipment |
| CN112017944A (en) * | 2019-05-28 | 2020-12-01 | 北京北方华创微电子装备有限公司 | Wafer drying method |
| CN112086337A (en) * | 2019-06-14 | 2020-12-15 | 北京北方华创微电子装备有限公司 | Process chamber |
| CN115582333A (en) * | 2022-10-24 | 2023-01-10 | 智程半导体设备科技(昆山)有限公司 | Turnover type cleaning device for semiconductor wafer |
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| KR102007523B1 (en) * | 2017-08-18 | 2019-08-06 | 엔피홀딩스 | Substrate cleaning system |
| CN112670212B (en) * | 2020-12-24 | 2024-05-07 | 武汉理工大学 | Large-area printing and laser annealing manufacturing device and semiconductor manufacturing method |
| KR102623185B1 (en) * | 2021-09-15 | 2024-01-11 | 김광자 | Polishing device for reflex mirror |
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2015
- 2015-03-02 KR KR1020150028876A patent/KR20160106257A/en not_active Application Discontinuation
- 2015-06-08 CN CN201520390498.7U patent/CN204668283U/en active Active
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105629530A (en) * | 2016-01-19 | 2016-06-01 | 京东方科技集团股份有限公司 | Cleaning device and use method thereof |
| CN109148252A (en) * | 2018-08-28 | 2019-01-04 | 德淮半导体有限公司 | Etching apparatus and crystal edge lithographic method |
| CN109671650A (en) * | 2018-12-04 | 2019-04-23 | 芯恩（青岛）集成电路有限公司 | A kind of circulating liquid formula suction nozzle, and its method for removing particle in wafer |
| CN112017944A (en) * | 2019-05-28 | 2020-12-01 | 北京北方华创微电子装备有限公司 | Wafer drying method |
| CN112017944B (en) * | 2019-05-28 | 2023-12-22 | 北京北方华创微电子装备有限公司 | Wafer drying method |
| CN112086337A (en) * | 2019-06-14 | 2020-12-15 | 北京北方华创微电子装备有限公司 | Process chamber |
| CN112086337B (en) * | 2019-06-14 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Process chamber |
| CN110571175A (en) * | 2019-09-17 | 2019-12-13 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Swing arm control method, device and system and wafer processing equipment |
| CN115582333A (en) * | 2022-10-24 | 2023-01-10 | 智程半导体设备科技(昆山)有限公司 | Turnover type cleaning device for semiconductor wafer |
| CN115582333B (en) * | 2022-10-24 | 2023-09-01 | 苏州智程半导体科技股份有限公司 | Turnover type cleaning device for semiconductor wafer |
| CN116598248A (en) * | 2023-05-11 | 2023-08-15 | 扬州市坤展新能源科技有限公司 | Semiconductor wafer cleaning device |
| CN116598248B (en) * | 2023-05-11 | 2023-10-10 | 扬州市坤展新能源科技有限公司 | Semiconductor wafer cleaning device |
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| KR20160106257A (en) | 2016-09-12 |
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Effective date of registration: 20180423 Address after: Korea city Daoan Patentee after: Case Polytron Technologies Inc Address before: Jing Jidao Patentee before: K. C. Tech Co., Ltd. |