CN109148252A - Etching apparatus and crystal edge lithographic method - Google Patents
Etching apparatus and crystal edge lithographic method Download PDFInfo
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- CN109148252A CN109148252A CN201810988801.1A CN201810988801A CN109148252A CN 109148252 A CN109148252 A CN 109148252A CN 201810988801 A CN201810988801 A CN 201810988801A CN 109148252 A CN109148252 A CN 109148252A
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- 238000005530 etching Methods 0.000 title claims abstract description 218
- 239000013078 crystal Substances 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 24
- 230000007547 defect Effects 0.000 claims abstract description 71
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000007921 spray Substances 0.000 claims description 67
- 238000001514 detection method Methods 0.000 claims description 18
- 230000001105 regulatory effect Effects 0.000 claims description 13
- 230000001276 controlling effect Effects 0.000 claims description 3
- 238000012545 processing Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 155
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 210000001364 upper extremity Anatomy 0.000 description 7
- 230000009286 beneficial effect Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- -1 defect is reduced Substances 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- 239000002699 waste material Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000009423 ventilation Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003546 flue gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 229920000642 polymer Polymers 0.000 description 1
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- 230000002393 scratching effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3348—Problems associated with etching control of ion bombardment energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention relates to semiconductor processing equipment technical fields, disclose a kind of etching apparatus and crystal edge lithographic method for removing backside of wafer defect.Specific etching apparatus includes the upper platform body and lower platform body being oppositely arranged, top electrode and lower electrode are correspondingly provided in the opposite two sides of upper platform body, lower platform body, it is provided with the pedestal for support wafer on the bottom electrode, further includes the etching gas feeding assembly for etching the lower edges of wafer.When carrying out crystal edge etching, wafer is placed on pedestal, upper platform body drives top electrode to move downward, push down and be covered on the center of wafer, the lower edges of etching gas feeding assembly towards wafer are ventilated, while etchs and removing the defect at the lower edges of wafer, raising product yield.
Description
Technical field
The present invention relates to semiconductor processing equipment technical field, in particular to a kind of etching apparatus and crystal edge etching side
Method.
Background technique
Etching (Etch) is the considerable step of one of semiconductor fabrication process, and etching is associated with photoetching, right
Material is patterned (pattern) processing.Lithographic technique is broadly divided into dry etching and wet etching, dry etching (dry
It etch) is the technology that film etching is carried out with plasma.In the presence of gas is with plasma form, chemical activity compares normality
It will be eager to excel when lower very much, according to the difference for the material that is etched, selects suitable gas, so that it may quickly reacted with material,
Realize the purpose of etching removal.In addition, guiding and accelerating using electric field plasma, it is made to have certain energy, when
When it bombards the surface for the object that is etched, the atom for the object material that is etched can be hit, be turned to reach using energy physically
In-migration realizes the purpose of etching.Therefore, dry etching is the result of wafer surface physics and chemical two kinds of process balances.
After the processing procedures such as the deposition of multiple tracks, exposure mask, defect source can be generated in the fringe region of wafer, therefore, it is necessary to
The edge of wafer is handled, the defect of crystal edge is removed, carries out crystal edge etching.As shown in Figure 1, in the prior art, carving
Losing equipment includes the upper platform body being oppositely arranged, lower platform body and the top electrode for being correspondingly arranged at upper platform body, lower platform body opposite sides
And lower electrode, be provided with the pedestal for support wafer on the bottom electrode, etching apparatus further include be provided with appear on the stage it is intracorporal
Air flue, air flue are connected with external gas source.The method of crystal edge etching is that the central area of wafer is covered and fixed, and is exposed
The fringe region of wafer is passed through etching gas above edge region, removes film and polymer at crystal round fringes.
Since the manufacturing process such as the etching of wafer, exposure mask are generally carried out in wafer frontside, existing crystal edge etching collection
The front of middle etching wafer.But in practical making technology, the back side of wafer can also generate defect, backside of wafer at this time
Defect can not be etched and remove, defect can be evolved into defect source, gradually form bigger defect, damage wafer, reduce and produce
Product yield reduces life of product.Therefore, it is necessary to during crystal edge etches while etch the back side of wafer, defect is reduced, is mentioned
High product yield.
Summary of the invention
The present invention proposes, and it is an object of the present invention to provide a kind of etching apparatus, utilizes the etching apparatus in view of the above technical problems
The upper and lower surface of crystal round fringes is performed etching, the defect of upper and lower surface is removed, improves product yield.
Specifically, the present invention provides a kind of etching apparatus, including the upper platform body and lower platform body being oppositely arranged, described
The opposite two sides of upper platform body, lower platform body are correspondingly provided with top electrode and lower electrode, are arranged on the lower electrode useful
It further include the etching gas feeding assembly for etching the lower edges of wafer in the pedestal of support wafer.
Compared to existing technologies, wafer is placed in by etching apparatus provided by the invention when carrying out crystal edge etching
On pedestal, upper platform body drives top electrode to move downward, and covers and push down the center of wafer, and etching gas feeding assembly is towards wafer
Lower edges be passed through etching gas, etch and remove the defect at the lower edges of wafer, improve product yield.Pass through setting
To the etching gas feeding assembly that the lower edges (crystal edge) of wafer can etch, the front of crystal edge can be both etched, it can also
To etch the back side of crystal edge, to can be fully cleaned to crystal edge, crystal edge defect is reduced, product yield is improved, improves product
Service life.
In addition, preferably, the etching gas feeding assembly includes gas source and is connected with the gas source
Main airway, the etched member that the main airway is communicated with the lower edges for reaching wafer and performs etching.
According to this programme, it is passed through etching gas to main airway using gas source, etching gas is along main airway and via quarter
The lower edges that component reaches wafer are lost, so that the lower edges to wafer perform etching, crystal edge defect is reduced, it is good to improve product
Rate.
Further, preferably, the etched member includes first spray head and for driving the first spray head to exist
The actuator of the lower edges movement of wafer.
According to this programme, when performing etching, actuator work, driving first spray head is moved in the lower edges of wafer,
The lower edges of wafer are performed etching, to reduce crystal edge defect, improve product yield.Actuator drives first spray head can be with
It is moved along wafer peripheral, also angle or far and near distance of the adjustable first spray head relative to crystal round fringes, can make wafer
The etching at edge is more flexible, and reasonable distribution can be carried out according to the defect situation of the lower edges of wafer and is removed, is reduced brilliant
Side defect improves product yield.
In addition, two second spray heads are right respectively preferably, the etched member includes at least two second spray heads
It should be in the lower edges of wafer.
According to this programme, two second spray heads correspond respectively to the lower edges of wafer, and etching gas passes through main airway simultaneously
The edge of wafer is reached via second spray head, to perform etching respectively to the lower edges of wafer, is reduced crystal edge defect, is improved
Product yield.
Further, preferably, the etching gas feeding assembly include the first gas source, the second gas source and with it is described
The first air flue that first gas source, the second gas source are connected, the second air flue, the gas outlet difference of first air flue, the second air flue
Lower edges corresponding to wafer.
According to this programme, the first gas source is passed through etching gas to the first air flue, and the second gas source is passed through etching to the second air flue
Gas, etching gas reach gas outlet along the first air flue, the second air flue and spray, carve respectively to the lower edges of wafer
Erosion reduces crystal edge defect, improves product yield.
In addition, preferably, the etching gas feeding assembly includes the regulating valve for controlling etching gas jet amount.
Using the jet amount for adjusting valve regulation etching gas, pointedly crystal edge defect can be performed etching, etching effect
Rate is high, and can be to avoid waste, save the cost.
In addition, preferably, further including controller and the detection part for detecting defect at wafer lower edges；Institute
Etching gas feeding assembly and the detection part is stated to communicate to connect with the controller.
According to this programme, detection part detects the defect at wafer lower edges, and will test result and feed back to controller,
Controller issues control signal, the position of control crystal edge etching and dynamics, flexibly etches and remove lacking for the edge of wafer
It falls into, reduces crystal edge defect, improve product yield.
Present invention simultaneously provides a kind of crystal edge lithographic methods, are performed etching by the upper and lower surface to crystal round fringes, simultaneously
The defect of upper and lower surface is removed, product yield is improved.
Specifically, the present invention provides a kind of crystal edge lithographic method, include the following steps:
Step S1: wafer is placed on pedestal；
Step S2: it is performed etching using lower edges of the etching apparatus in above scheme to wafer.
Crystal edge lithographic method according to the present invention, wafer is placed on pedestal, using etching gas feeding assembly, respectively
The lower edges of wafer are performed etching.At this point, can both etch the front of crystal edge, the back side of crystal edge can also be etched, thus
Crystal edge can be fully cleaned, reduce crystal edge defect, improve product yield, improve the service life of product.
Wherein, preferably, the etching apparatus includes etched member, the etched member includes first spray head and use
In the actuator for driving lower edges of the first spray head in wafer to move, in step s 2, change first spray head is utilized
Position and direction perform etching the lower edges of wafer.
Actuator can drive first spray head to move in the lower edges of wafer, perform etching to the lower edges of wafer,
Crystal edge defect is reduced, product yield is improved.Actuator can drive first spray head to move along wafer peripheral, and also adjustable first
Angle or far and near distance of the spray head relative to crystal round fringes, so that the etching of crystal round fringes is more flexible, first spray head can
To carry out reasonable distribution according to the defect situation of the lower edges of wafer and remove, crystal edge defect is reduced, product yield is improved.
In addition, two second spray heads are right respectively preferably, the etched member includes at least two second spray heads
It should be in the lower edges of wafer, in step s 2, using two second spray heads for corresponding to wafer lower edges, to the upper of wafer
Lower edge performs etching.
According to this programme, two second spray heads correspond respectively to the lower edges of wafer, and etching gas passes through main airway simultaneously
The edge of wafer is reached via second spray head, to perform etching respectively to the lower edges of wafer, is reduced crystal edge defect, is improved
Product yield.
In addition, preferably, controlling the jet amount of etching gas using regulating valve.
Pointedly crystal edge defect can be carried out using the jet amount for adjusting valve regulation etching gas according to this programme
Etching, etching is high-efficient, and can be to avoid waste, save the cost.
In addition, preferably, using the defect at detection part detection wafer lower edges, detection part will test result
Controller is fed back to, the work of controller control etched member is utilized.
According to this programme, detection part detects the defect at wafer lower edges, and will test result and feed back to controller,
Controller issues control signal, the position of control crystal edge etching and dynamics, flexibly etches and remove lacking for the edge of wafer
It falls into, reduces crystal edge defect, improve product yield.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of etching apparatus in the prior art；
Fig. 2 is the structural schematic diagram of embodiment of the present invention one；
Fig. 3 is the structural schematic diagram of embodiment of the present invention two；
Fig. 4 is the partial enlarged view in the portion A when first spray head sprays wafer frontside in Fig. 3；
Fig. 5 is the partial enlarged view in the portion A when first spray head sprays backside of wafer in Fig. 3；
Fig. 6 is the control schematic diagram of embodiment of the present invention three；
Fig. 7 is the structural schematic diagram of embodiment of the present invention three；
Fig. 8 is the partial enlarged view in the portion B in Fig. 6；
Fig. 9 is the flow diagram of embodiment of the present invention four；
Figure 10 is the structural schematic diagram of embodiment of the present invention five；
Figure 11 is the structural schematic diagram of embodiment of the present invention six.
Description of symbols:
1, upper platform body；2, lower platform body；3, top electrode；4, lower electrode；5, pedestal；6, wafer；7, etching gas feeding assembly；
8, the first air flue；9, the second air flue；10, upper limb area；11, central airway；12, main airway；13, etched member；14, the first spray
Head；15, actuator；16, controller；17, detection part；18, second spray head；19, regulating valve；20, gas outlet.
Specific embodiment
With reference to the accompanying drawings of the specification, the present invention is further described in detail.Schematically simplification is shown in attached drawing
The structure etc. of etching apparatus is gone out.
In the description of the present invention, it is to be understood that, term " on ", "lower", "front", "rear", "left", "right", "top",
The orientation or positional relationship of the instructions such as "bottom", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, merely to just
In description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with
Specific orientation construction and operation, therefore be not considered as limiting the invention.
Wafer refers to silicon wafer used in silicon semiconductor production of integrated circuits, since its shape is circle, therefore referred to as wafer.
It can be processed on silicon and is fabricated to various circuit component structures, and become the IC product for having specific electrical functionality.
In wafer manufacturing, crystal-pulling, slice, grinding, polishing, increasing layer, photoetching, doping, heat treatment, needle are surveyed and are drawn
Piece is relatively conventional wafer manufacturing process, and in this serial procedures, along with chemical gaseous phase deposition, optics development, change
The manufacturing process for learning mechanical lapping etc. may all make crystal column surface generate defect in these manufacturing process.If defect is too late
When, removes clean, will form defect source, defect source can attract more impurity particles to be flushed to wafer after acid tank processing procedure
On, bigger defect is formed, the yield of wafer is seriously affected.
Wafer in production, typically carries out various making technologies in the front of wafer, therefore defect is concentrated mainly on
The front of wafer.But in each road manufacturing process of wafer, the back side of wafer can also generate some defects.Such as in dry method
In etching, due to the limitation of dry etching equipment, position sensor and carrying controller can not correctly identify wafer alignment
When notch and real crystal round fringes, it can not cause by wafer accurate placement in the center of Electrostatic Absorption disk by Electrostatic Absorption disk
The Traffic Anomaly of the cooling helium of back side injection is higher.The big flow helium can splash the etching product of Electrostatic Absorption plate edge
It is mapped to the back side of wafer, defect is generated so as to cause backside of wafer, reduces the yield at crystal round fringes.
Accordingly, there exist needing the lower edge to wafer to perform etching, the defect at wafer lower edges is removed, improves product
The problem of yield.
Embodiment one
First embodiment of the invention provides a kind of etching apparatus, shown in Figure 2, including upper platform body 1, lower platform body
2, top electrode 3 and lower electrode 4.Upper platform body 1 is oppositely arranged with lower platform body 2, on top electrode 3, lower electrode 4 are correspondingly arranged in
The opposite two sides of stage body 1, lower platform body 2 are additionally provided with the pedestal 5 for support wafer 6 on lower electrode 4.Etching apparatus also wraps
Etching gas feeding assembly 7 is included, the lower edges of wafer 6 are etched using etching gas feeding assembly 7.
Wafer 6 is placed on pedestal 5, upper platform body using etching apparatus provided by the invention when carrying out crystal edge etching
1 drive top electrode 3 moves downward, and covers and push down the center of wafer 6, and etching gas feeding assembly 7 is towards the upper following of wafer 6
Edge ventilation, while etch and removing the defect at the lower edges of wafer 6, raising product yield.It is supplied by setting etching gas
To component 7, the front of crystal edge can be both etched, the back side of crystal edge can also be etched, to can be fully cleaned to crystal edge, is reduced
Crystal edge defect improves product yield, improves the service life of product.
Preferably, etching gas feeding assembly 7 includes the first gas source, (the first gas source, the second gas source are outer to the second gas source
Portion's gas source is not indicated in figure for simple signal) and the first air flue 8, the second gas that are connected with the first gas source, the second gas source
Road 9, wherein the first air flue 8, the second air flue 9 gas outlet 20 correspond respectively to the lower edges of wafer 6.Carrying out crystal edge quarter
When erosion, the first gas source is passed through etching gas to the first air flue 8, and the second gas source is passed through etching gas, etching gas to the second air flue 9
Gas outlet 20 is reached respectively along the first air flue 8, the second air flue 9 and is sprayed, and the lower edges of wafer 6 are performed etching respectively,
Crystal edge defect is reduced, product yield is improved.
In present embodiment, the distance of crystal edge etching is 1mm, namely carves from the edge of wafer 6 to the center position of wafer 6
Lose 1mm.In other embodiments, the distance of crystal edge etching can control between 0.5mm-2mm.
Particularly, the first air flue 8, the second air flue 9 are respectively to open the channel in upper platform body 1 and lower platform body 2, Ke Yiyou
Effect utilizes the self structure of etching apparatus, saves space, save the cost.
There is gap between top electrode 3 and wafer 6 on pedestal 5 and form upper limb area 10, in upper limb area 10 and one
Motive source (center gas source is external air source, illustrates to be simple, does not indicate in figure) is connected by central airway 11, it is preferable that
Central airway 11 is connected with the centre in upper limb area 10.It is passed through obstruction gas using the upward edge area 10 of center gas source, is obstructed
Gas to be located at pedestal 5 on wafer 6 edge-diffusion and prevent etching gas etching wafer 6 inside.Carrying out crystal edge quarter
When erosion, etching gas feeding assembly 7 performs etching the lower edges of wafer 6, to avoid etching gas from invading the centre of wafer 6
Region simultaneously performs etching the intermediate region of wafer 6, and obstruction gas is passed through in the upward edge area 10 of center gas source, obstructs gas that will carve
It loses gas and 6 central area of wafer is discharged, the central area of wafer 6 is avoided to influence yield by overetch, and then improve product
Yield.
Particularly, the etching gas that the first gas source, the second gas source are passed through is any one of SF6, Cl2 or N2, resistance
Scratching gas is N2.
In present embodiment, pedestal 5 is fixed, the first air flue 8, the second air flue 9 gas outlet 20 be annularly looped around
It is placed in the edge of the wafer 6 on pedestal 5.In other embodiments, the rotation of pedestal 5, etching gas supply group also can be set
The fixed point of part 7 performs etching the edge of wafer 6.
Since the positive planar defect of wafer 6 is more than the defect on back side of wafer 6, the ventilation speed of the second air flue 9 can be set
Rate be lower than the first air flue 8 Ventilation Rate, and then can control the first air flue 8, the second air flue 9 works at the same time or terminates simultaneously,
Facilitate the work of control the first air flue 8, the second air flue 9.
On this basis, the first gas source can also be set, the second gas source is the same gas source, the first gas of more convenient control
The on-off in road 8, the second air flue 9, and component, save the cost can also be saved.
This etching apparatus can not only perform etching the edge of wafer 6, can also carry out other etching systems of wafer 6
Journey.
It the concrete operating principle of present embodiment one and has the beneficial effect that:
When carrying out crystal edge etching, wafer 6 is placed on pedestal 5, upper platform body 1 drives top electrode 3 to move downward, and covers
And push down the center of wafer 6.First gas source is passed through etching gas to the first air flue 8, and the second gas source is passed through etching to the second air flue 9
Gas, etching gas reaches respective gas outlet 20 along the first air flue 8, the second air flue 9 and sprays, respectively to the upper of wafer 6
Lower edge performs etching.It is passed through obstruction gas in the upward edge area 10 of center gas source, obstructs gas by etching gas discharge wafer 6
Central area avoids the central area of wafer 6 from being etched and influence yield.Present embodiment passes through the lower edges to wafer 6
It performs etching, reduces crystal edge defect, improve product yield.
Embodiment two
Second embodiment of the present invention provides a kind of etching apparatus, and the main improvements of second embodiment exist
In in second embodiment of the present invention, from the point of view of Fig. 3, Fig. 4, etching gas feeding assembly 7 includes gas source (main gas
Source is external air source, for simple signal, is not indicated in figure) and the main airway 12 that is connected with gas source, main airway 12 be connected to
There is etched member 13, when carrying out crystal edge etching, is passed through etching gas to main airway 12 using gas source, etching gas is along master
Air flue 12 simultaneously reaches the lower edges of wafer 6 via etched member 13 and performs etching to the lower edges of wafer 6.To reduce
Crystal edge defect improves product yield.
Particularly, main airway 12 is the channel opened in upper platform body 1, can efficiently use itself knot of etching apparatus
Structure saves space, save the cost.
Referring to fig. 4 and shown in Fig. 5, in present embodiment, etched member 13 includes first spray head 14 and actuator 15, is driven
Moving part 15 can drive first spray head 14 to move in the lower edges of wafer 6.In present embodiment, actuator 15 is 2-axis linkage
Perhaps triaxial connecting system 2-axis linkage mechanism or triaxial connecting system are the prior art for mechanism, structure feature and
Working principle is the prior art, does not do excessively repeat herein.
When carrying out crystal edge etching, actuator 15 works, and driving first spray head 14 is moved in the lower edges of wafer 6, drives
Moving part 15 also drives first spray head 14 to be rotated so that the puff prot of first spray head 14 face always wafer 6 front or
The person back side, first spray head 14 perform etching the lower edges of wafer 6.Actuator 15 drives first spray head 14 to move, so that brilliant
The etching of circle 6 is more flexible, and reasonable distribution can be carried out according to the defect situation of the lower edges of wafer 6 and is removed, is reduced brilliant
Side defect improves product yield.
It is shown in Figure 6, preferably, the etching apparatus of present embodiment further includes controller 16 and detection part
17, etching gas feeding assembly 7 and detection part 17 are communicated to connect with controller 16.Detection part 17 includes sensor
And/or photographic device, illustrate to be simple, specific mark in figure.Lacking at 6 lower edges of wafer is detected using detection part 17
It falls into, and will test result and feed back to controller 16, controller 16 issues control signal, and control etching gas feeding assembly 7 etches
Position and dynamics, flexibly etch and remove the defect of the edge of wafer 6, reduce crystal edge defect, improve product yield.
It the concrete operating principle of present embodiment two and has the beneficial effect that:
When carrying out crystal edge etching, wafer 6 is placed on pedestal 5, upper platform body 1 drives top electrode 3 to move downward, and covers
And push down the center of wafer 6.Detection part 17 detects the defect at 6 lower edges of wafer, and will test result and feed back to control
Device 16, controller 16 issue control signal to the actuator 15 of etching gas feeding assembly 7.Actuator 15 is sent out according to controller 16
Control signal work out, driving first spray head 14 are moved in the lower edges of wafer 6, are carved to the lower edges of wafer 6
Erosion.It is passed through obstruction gas in the upward edge area 10 of center gas source, gas is obstructed to keep away the central area of etching gas discharge wafer 6
The central area for exempting from wafer 6 is etched and influences yield.Present embodiment is performed etching by the lower edges to wafer 6, is subtracted
Few crystal edge defect, improves product yield.
Embodiment three
Third embodiment of the present invention provides a kind of etching apparatus, and the main improvements of third embodiment exist
In, in third embodiment of the present invention, from the point of view of Fig. 7 and Fig. 8, etched member 13 include two second spray heads 18, two
A second spray head 18 corresponds respectively to the lower edges of wafer 6.When carrying out crystal edge etching, etching gas passes through main airway 12 simultaneously
The lower edges of wafer 6 are arrived separately at by two second spray heads 18, so that the lower edges of wafer 6 are performed etching respectively,
Crystal edge defect is reduced, product yield is improved.
It is shown in Figure 7, it is the jet amount of flexible modulation etching gas, etching gas feeding assembly 7 further includes regulating valve
19.Preferably, regulating valve 19 is solenoid valve, and regulating valve 19 and controller 16 communicate to connect.When carrying out crystal edge etching, for crystalline substance
Defect at the lower edges of circle 6 adjusts the jet amount of etching gas using regulating valve 19, pointedly carries out crystal edge etching,
Etch it is high-efficient, and can be to avoid waste, save the cost.
It the concrete operating principle of present embodiment three and has the beneficial effect that:
When carrying out crystal edge etching, wafer 6 is placed on pedestal 5, upper platform body 1 drives top electrode 3 to move downward, and covers
And push down the center of wafer 6.Detection part 17 detects the defect at 6 lower edges of wafer, and will test result and feed back to control
Device 16, controller 16 issue control signal to etching gas feeding assembly 7.Etching gas is reached by main airway 12 corresponds to crystalline substance
At two second spray heads 18 of the lower edges of circle 6, to be performed etching respectively to the lower edges of wafer 6.Utilize regulating valve
19 adjust the jet amount of etching gas, pointedly carry out crystal edge etching.Center gas source is passed through obstruction gas in upward edge area 10,
Gas is obstructed to avoid the central area of wafer 6 from being etched and influence yield the central area of etching gas discharge wafer 6.This
Embodiment is performed etching by the lower edges to wafer 6, reduces crystal edge defect, improves product yield.
Embodiment four
The method that the etching apparatus that present embodiments provide for a kind of using in embodiment one carries out crystal edge etching, in conjunction with
From the point of view of Fig. 9, the method specific implementation step is as follows:
Step S1: wafer 6 is placed on pedestal 5；
Step S2: the lower edges of wafer 6 are performed etching using etching apparatus in embodiment one.
When carrying out crystal edge etching, wafer 6 is placed on pedestal 5, using etching apparatus respectively to the upper following of wafer 6
Edge performs etching.At this point, can both etch the front of crystal edge, the back side of crystal edge can also be etched, to carry out to crystal edge comprehensive
Cleaning reduces crystal edge defect, improves product yield, improves the service life of product.
In step sl, specifically, wafer 6 is placed on pedestal 5, upper platform body 1 drives top electrode 3 to move downward, and covers
Cover and push down the center of wafer 6.
In step s 2, specifically, being passed through etching gas to the first air flue 8 using the first gas source, using the second gas source to
Second air flue 9 is passed through etching gas, and etching gas reaches gas outlet 20 along the first air flue 8, the second air flue 9 and sprays, respectively
The lower edges of wafer 6 are performed etching, crystal edge defect is reduced, improve product yield.
In step s 2, can also preferably include: there are gaps between adjustment wafer 6 and top electrode 3 to form upper limb
Area 10 is passed through obstruction gas to upper limb area 10, obstructs gas to the edge-diffusion of wafer 6 and etching gas is prevented to etch wafer 6
Inside.When carrying out crystal edge etching, it is passed through obstruction gas in the upward edge area 10 of center gas source, gas is obstructed to arrange etching gas
6 central area of wafer out avoids the central area of wafer 6 from being etched and influence yield, and then improves product yield.
It the concrete operating principle of present embodiment four and has the beneficial effect that:
When carrying out crystal edge etching, wafer 6 is placed on pedestal 5, upper platform body 1 drives top electrode 3 to move downward, and covers
And push down the center of wafer 6.First gas source is passed through etching gas to the first air flue 8, and the second gas source is passed through etching to the second air flue 9
Gas, etching gas reaches gas outlet 20 along the first air flue 8, the second air flue 9 and sprays, respectively to the lower edges of wafer 6
It performs etching.It is passed through obstruction gas in the upward edge area 10 of center gas source, obstructs gas by the center of etching gas discharge wafer 6
Domain avoids the central area of wafer 6 from being etched and influence yield.Present embodiment is carved by the lower edges to wafer 6
Erosion reduces crystal edge defect, improves product yield.
Embodiment five
5th embodiment of the invention provides a kind of etching apparatus progress crystal edge etching using in embodiment two
Method, in the 5th embodiment of the invention, from the point of view of Figure 10, in step s 2, specifically, using change first spray
First 14 position and direction, performs etching the lower edges of wafer 6.When carrying out crystal edge etching, pass through the first spray of setting
First 14, and can change using first spray head 14 characteristic of position and direction, it can be according to the defect feelings of the lower edges of wafer 6
Condition carries out reasonable distribution and removes, and flexibly etches the lower edges of wafer, reduces crystal edge defect, improves product yield.
In step s 2, it is also controlled using controller 16, etching gas feeding assembly 7 and 16 communication link of controller
It connects.The work that etching gas feeding assembly 7 is controlled using controller 16, flexibly performs etching the edge defect of wafer 6, carves
Lose it is high-efficient, and can be to avoid waste, save the cost.
It in step s 2, further include the jet amount that etching gas is controlled using regulating valve 19.It is adjusted and is carved using regulating valve 19
The jet amount for losing gas, can pointedly perform etching crystal edge defect, and etching is high-efficient, and can save to avoid waste
The about energy.
It the concrete operating principle of present embodiment five and has the beneficial effect that:
When carrying out crystal edge etching, wafer 6 is placed on pedestal 5, upper platform body 1 drives top electrode 3 to move downward, and covers
And push down the center of wafer 6.Detection part 17 detects the defect at 6 lower edges of wafer, and will test result and feed back to control
Device 16.Actuator 15 drives first spray head 14 to move in the lower edges of wafer 6, and controller 16 is to etching gas feeding assembly 7
Control signal is issued, control etching gas feeding assembly 7 is ventilated.Etching gas is reached at first spray head 14 by main airway 12,
First spray head 14 is moved in the lower edges of wafer 6, to perform etching respectively to the lower edges of wafer 6.Utilize regulating valve
19 adjust the jet amount of etching gas, pointedly carry out crystal edge etching.Center gas source is passed through obstruction gas in upward edge area 10,
Gas is obstructed to avoid the central area of wafer 6 from being etched and influence yield the central area of etching gas discharge wafer 6.This
Embodiment is performed etching by the lower edges to wafer 6, reduces crystal edge defect, improves product yield.
Embodiment six
Sixth embodiment of the invention provides a kind of etching apparatus progress crystal edge etching using in embodiment three
Method, in sixth embodiment of the invention, from the point of view of Figure 11, in step s 2, specifically, using corresponding respectively to
Two second spray heads 18 of 6 lower edges of wafer, perform etching the lower edges of wafer 6.When carrying out crystal edge etching, two
Second spray head 18 corresponds respectively to the lower edges of wafer 6, using two second spray heads 18 respectively to the lower edges of wafer 6 into
Row etching, reduces crystal edge defect, improves product yield.
It the concrete operating principle of present embodiment six and has the beneficial effect that:
When carrying out crystal edge etching, wafer 6 is placed on pedestal 5, upper platform body 1 drives top electrode 3 to move downward, and covers
And push down the center of wafer 6.Detection part 17 detects the defect at 6 lower edges of wafer, and will test result and feed back to control
Device 16, controller 16 issue control signal to etching gas feeding assembly 7, and control etching gas feeding assembly 7 is ventilated.Etch gas
Body is reached by main airway 12 at two second spray heads 18 of the lower edges for corresponding respectively to wafer 6, thus respectively to wafer 6
Lower edges perform etching.The jet amount of etching gas is adjusted using regulating valve 19, pointedly carries out crystal edge etching.Center
Gas source is passed through obstruction gas into upper limb area 10, obstructs gas that the central area of etching gas discharge wafer 6 is avoided wafer 6
Central area be etched and influence yield.Present embodiment is performed etching by the lower edges to wafer 6, is reduced crystal edge and is lacked
It falls into, improves product yield.
Using two second spray heads 18 of the lower edges for corresponding respectively to wafer 6, actuator can be cancelled and with opposite
Second spray head is arranged in fixed mode, while reducing cost, reduces actuator and breaks down and need a possibility that safeguarding.
Present embodiment illustrates only two second spray heads, but not limited to this, it can be multiple groups second spray head around crystalline substance
Circumferential edge and be appropriately arranged.
It to those skilled in the art, can be as needed and for above-mentioned in the range of technical thought of the invention
Each step of control method is deleted or sequence adjusts.
It will be understood by those skilled in the art that in above-mentioned each embodiment, in order to keep reader more preferably geographical
It solves the application and proposes many technical details.But even if without these technical details and based on the respective embodiments described above
Various changes and modifications can also realize each claim of the application technical solution claimed substantially.Therefore, in reality
In, can to above embodiment, various changes can be made in the form and details, without departing from spirit and model of the invention
It encloses.
Claims (10)
1. a kind of etching apparatus, including the upper platform body and lower platform body being oppositely arranged, in the opposite two sides of the upper platform body, lower platform body
It is correspondingly provided with top electrode and lower electrode, the pedestal for support wafer, feature are provided on the lower electrode
It is, further includes the etching gas feeding assembly for etching the lower edges of wafer.
2. etching apparatus according to claim 1, which is characterized in that the etching gas feeding assembly includes the first gas
Source, the second gas source and the first air flue being connected with first gas source, the second gas source, the second air flue, first air flue,
The gas outlet of second air flue corresponds respectively to the lower edges of wafer.
3. etching apparatus according to claim 1, which is characterized in that the etching gas feeding assembly include gas source with
And the main airway being connected with the gas source, the main airway are communicated with the lower edges for reaching wafer and perform etching
Etched member.
4. etching apparatus according to claim 3, which is characterized in that the etched member includes first spray head and is used for
The actuator for driving the first spray head to move in the lower edges of wafer.
5. etching apparatus according to claim 3, which is characterized in that the etched member includes at least two second sprays
Head, the second spray head correspond respectively to the lower edges of wafer.
6. etching apparatus described in any one of -5 according to claim 1, which is characterized in that the etching gas feeding assembly
Including the regulating valve for controlling etching gas jet amount.
7. etching apparatus described in any one of -5 according to claim 1, which is characterized in that further include controller and be used for
Detect the detection part of defect at wafer lower edges；
The etching gas feeding assembly and the detection part are communicated to connect with the controller.
8. a kind of crystal edge lithographic method, which comprises the steps of:
Step S1: wafer is placed on pedestal；
Step S2: it is performed etching using the lower edges of etching apparatus described in claim 1 to wafer.
9. crystal edge lithographic method according to claim 8, which is characterized in that the etching apparatus includes etched member, institute
State etched member include first spray head and for drive the first spray head wafer lower edges move actuator,
In step S2, using the position and direction for changing first spray head, the lower edges of wafer are performed etching.
10. crystal edge lithographic method according to claim 9, which is characterized in that the etched member includes at least two the
Two spray heads, two second spray heads correspond respectively to the lower edges of wafer, in step s 2, using corresponding to above and below wafer
Two second spray heads at edge, perform etching the lower edges of wafer.
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Application publication date: 20190104 |