1243420 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種半導體晶圓之洗滌方法及洗滌裝 置者。 【先前技術】 有關半導體晶圓之技術，例如有日本國專利公開公報 2003-7665號所示者。於此洗滌技術係形成球體銲接凸塊 之半導體晶圓之下面，由吸著裝置固定於載物台。使載物 台旋轉，由設置於半導體晶圓上面之上方之洗滌喷嘴噴射 洗滌液，得以洗滌半導體晶圓。由於自晶圓上面喷射洗滌 液，除銲接凸塊電極周邊之銲劑之外，尚可去除微少銲 渣。但是，此洗滌技術之洗滌喷嘴，係設置於半導體晶圓 表面球體之銲接凸塊頂上，難於去除藏於球體銲接凸塊根 W之鋅劑，又，喷射水係對晶圓平面大致成垂直狀態噴射 2洗滌水，洗滌面積狹窄，而需使喷嘴普遍掃描晶圓上， 需對晶圓全面喷射洗滌液用以洗滌，洗滌相當費時。 第7圖為本發明之發明者所製造之既有裝置之洗滌 :二：部構造圖。於此圖’晶圓u、12、13裝載於晶圓 輸π 14徐徐向箭頭方向移動之間，自喷嘴16噴射洗 :用以洗滌晶圓。自搬入口 17進入之晶圓向箭頭方向移 几成洗滌之晶圓自搬出口 18取出移至次工序。 社知'費時之此等裝置，洗滌所用之晶圓運輸帶過長， 二間大，有需要廣大設置面積之缺點。 曰叙生大量洗務霧，為防止自搬入口 17及搬 1243420 出口 18漂出洗滌霧，需由排氣管20連同空氣排出。因此 洗務液之損失多，成為此裝置之運轉成本高之要因。 本舍明之目的係提供一種洗滌裝置，對於半導體晶圓 之鲜接潰及銲劑之洗滌效果高，佔空間小，而且，可節省 運轉成本。 【發明内容】 整體槿4 本^明之洗務裝置係具備··洗滌工序單元，分別說有 個別站，可裝載半導體晶圓，並對該半導體晶圓自上方降 下可動蓋加以覆蓋，並配置成一排；沖洗工序單元；移送 機構，與上述各蓋之上下動作所決定之流程定時（Tad1243420 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method and apparatus for cleaning semiconductor wafers. [Prior art] As for the technology of the semiconductor wafer, for example, there is one shown in Japanese Patent Laid-Open Publication No. 2003-7665. Below this washing technology is formed a sphere solder bump under the semiconductor wafer, which is fixed to the stage by a suction device. The semiconductor wafer is washed by rotating the stage and spraying a washing liquid from a washing nozzle provided above the upper surface of the semiconductor wafer. Since the cleaning liquid is sprayed from the wafer, in addition to soldering the solder around the bump electrodes, a small amount of solder slag can be removed. However, the cleaning nozzle of this cleaning technology is set on the top of the solder bumps on the spheres of the semiconductor wafer surface. It is difficult to remove the zinc agent hidden in the roots of the solder bumps of the spheres. Furthermore, the spray water system sprays the wafer plane in a vertical state. 2Washing water, the washing area is narrow, and the nozzle needs to be scanned on the wafer generally, and the wafer needs to be sprayed with washing liquid for washing, which is quite time-consuming. FIG. 7 is a washing diagram of an existing device manufactured by the inventor of the present invention: Part 2: Structural drawing. In this figure, wafers u, 12, and 13 are loaded on the wafer. The π 14 moves slowly in the direction of the arrow, and the wafer 16 is sprayed and washed from the nozzle 16 to wash the wafer. The wafer entering from the transfer entrance 17 is moved in the direction of the arrow. The agency knows that these devices are time-consuming, the wafer conveyor used for cleaning is too long, the second room is large, and it has the disadvantage of requiring a large installation area. A large number of washing mists are generated in order to prevent the washing mist from drifting out of the entrance 17 and the 1243420 exit 18, which must be exhausted by the exhaust pipe 20 together with the air. Therefore, the loss of the washing solution is large, which becomes the main reason for the high operating cost of this device. The purpose of the present invention is to provide a cleaning device, which has a high cleaning effect on semiconductor wafers and solder, has a small space, and can save operating costs. [Summary of the Invention] The whole hibiscus 4 washing equipment is provided with a washing process unit, each of which has an individual station that can load a semiconductor wafer, and covers the semiconductor wafer with a movable cover lowered from above, and is arranged as a Row; flushing process unit; transfer mechanism, and the timing of the process determined by the up and down movement of each cover (Tad
Time)連動，同時將半導體晶圓自裝載該半導體晶圓之上 述個別站移送至次工序之個別站；洗務液槽；沖洗液槽； 及液泵，備有泵吐出裝置可調整洗滌液及沖洗液個別之喷 射壓力及喷射液量。每一上述洗滌工序單元，上述沖洗工 序單元之上述個別站，其液喷射壓力，液喷射量均設定於 規定値。 ' 有關喷射 上述蓋可裝設喷嘴。喷嘴對晶圓能變更角度狀，成搖 頭自如’或決定角度而®定，喷嘴經過上述液泵及導液管 連接於上述液槽。 洗滌輿噴射角之 對半導體晶圓之水平面，上述噴嘴之液嘴射角度θ以 10度S Θ S30度之範圍為宜。 1243420 有關晶圓之移 土=機構’可構成為向半導體晶圓之移動方向， 由夾八自左右將上述半導體晶圓提上 時機為上述蓋打開狀能之期n & 序。此移送 』间狀心之期間内，而且， 體晶圓之個別站騰空之時機。 ⑽疋展戟+導 有關晶1}之固宏 本洗滌裝置，係且借剧中拖Μ 送來之半㈣晶㈣㈣移動方式移 之央具央住固定者。則面由在半導體晶圓之移送方向 ί關族棘押制 上述=乾燥工序單元於上述沖洗工序單元之次段。當 圓移送至此乾燥工序單元之時機，為晶圓ί 作：吸著裝置之旋轉桌固著，以高速旋轉該旋轉卓 作遠心乾燥，經過規定日#心k m㈣騎轉桌 時叫止旋轉，隨後停止真空吸著。 可將乾燥工序單亓Μ里Μ , 此乾燥工序單元具可^^於上料紅序單元之次段。 日日®下面固著於具真 j軔盖忑 1乾燥空氣供應管，、之旋轉桌。可動蓋設置第 第2乾燥空氣管可向上；:方:;應乾燥空氣’旋轉桌設置 千導體晶圓之表面之同 勒蛊復蛊 上之表©喰 + fhP +门夺，苐乾燥空氣供應管向半導體 〜衣曲嘴出乾燥空惫， ] 背面嘴出乾燥空氣。、 空氣供應管向該晶圓 1243420 述乾單元可設置於上述沖洗工序單元之次段。上 …對此被真空吸著之半 ：广體曰曰因之 燥空氣供應管噴出乾曰曰因之至少在表面、自乾 該晶圓旋轉乾燥。上、:二且，使旋轉桌高速旋轉將 應管之可動蓋η 序單元，將設有乾燥空氣供 高速旋轉使之二二體晶圓之後’由噴出乾燥空氣與 蓋移動至該晶圓上/。木工乳贺出與南速旋轉之後將可動 ^發明之另-洗務裝置，係具備：洗務卫序單元分 可裝载半導體晶圓，並對該半導體晶圓自 一 動盘加以覆蓋’並配置成一排；沖洗工序單 二移，構:連動於上述各蓋之上下動作所決定之流程 ^日、、’同時將半導體晶圓自裝載該半導體晶圓之上述個別 偌：：至次工序之個別站’洗滌液槽;沖洗液槽;及液泵， 備有泵吐出裝置可調整洗㈣及沖洗液個狀噴射壓力 及喷射液量之洗條裝置，其中，配置裝載單元(、L〇ader Unit)位於接近洗務工序單元，為將裝石夕晶圓之料斗 (Magazine)裝載於上述洗滌工序單元之個別站之裝置， 並設置乾燥工序單元，在取出口之卸載單元(Uni〇ad:Time), at the same time, the semiconductor wafer is transferred from the above-mentioned individual station on which the semiconductor wafer is loaded to the individual station of the secondary process; a washing liquid tank; a washing liquid tank; and a liquid pump equipped with a pump discharge device to adjust the washing liquid and The individual spray pressure and volume of the flushing liquid. The liquid ejection pressure and the liquid ejection amount of each of the washing process units and the individual stations of the washing process units are set to a predetermined value. '' Regarding spraying The above caps can be fitted with nozzles. The angle of the nozzle to the wafer can be changed, and it can be shaken freely or determined depending on the angle. The nozzle is connected to the liquid tank through the liquid pump and the liquid pipe. As for the spraying angle of the cleaning nozzle to the horizontal plane of the semiconductor wafer, the liquid nozzle spraying angle θ of the nozzle is preferably in the range of 10 degrees S Θ S30 degrees. 1243420 The wafer-to-wafer soil = mechanism 'may be configured to move in the direction of the semiconductor wafer, and the timing to lift the semiconductor wafer from the left to the right is n & During this transfer period, the timing of individual stations of the bulk wafer vacated. Xuanzhan + Guo Jinghong 1 This solid washing device is a fixture that is moved by the movement of the semi-smoothed crystals sent by dragging M in the play. Then, the surface is controlled by the semiconductor spinner in the transfer direction of the semiconductor wafer. The above = the drying process unit is in the second stage of the above washing process unit. When the circle is transferred to this drying process unit, the wafer is made: the rotation table of the suction device is fixed, and the rotation is rotated at a high speed, and the telecentric drying is performed. After a predetermined day, the rotation is stopped when riding the rotation table. Vacuum suction was then stopped. The drying process can be performed in a single step, and the drying process unit can be in the second stage of the feeding red sequence unit. The bottom of the day is fixed to the rotating table with a real j 轫 盖 忑 1 dry air supply pipe. The second dry air tube can be set up with the movable cover upward: square :; should be dry air 'Rotary table is set on the surface of the 1000-conductor wafer. The above table © 喰 + fhP + door capture, 苐 dry air supply The tube is dry and exhausted to the semiconductor ~ Yiqu mouth,] Dry air out of the back mouth. The air supply pipe to the wafer 1243420 The dry unit can be set in the second stage of the above-mentioned washing process unit. Above… half of this was sucked by vacuum: wide body said that the dry air supply pipe sprayed dry because it was at least on the surface and self-dried. The wafer was spin-dried. Upper, second, and high-speed rotation of the rotating table will cover the movable cover of the tube sequence unit, and dry air will be provided for high-speed rotation of the second body wafer. Then the dry air and cover will be sprayed onto the wafer. /. The woodworking milk will be released after the South Speed rotation and will be movable ^ another invention-a washing device, which is equipped with: a washing and guarding unit can load a semiconductor wafer, and cover the semiconductor wafer from a moving disk 'and configure In a row; the cleaning process is moved two times, and the structure is as follows: the processes determined by the above and below operations of the lids are connected at the same time, and the individual semiconductor wafers are loaded with the semiconductor wafers at the same time; Station 'washing liquid tank; washing liquid tank; and liquid pump, equipped with a pump discharge device, which can adjust the individual spray pressure and the amount of spray liquid of the washing and washing liquid, including a loading unit (, Loader Unit) ) Is located close to the washing process unit. It is a device that loads the magazine containing the wafers at the individual stations of the washing process unit, and sets a drying process unit. The unloading unit (UniOad:
Unit)之後側。 有關洗滌方法 本發明之半導體晶圓洗條方法，係使半導體晶圓接連 不斷地向洗滌工序、沖洗工序、乾燥工序，並按所定之流 1243420 在不破壞之範圍内設定洗滌壓力及噴射量。於沖洗工序單 元3亦相同。 本實施㈣置之進深尺寸D及以H依人體工學_ 適當尺寸。視洗滌流程定時之需要決定洗滌工序單元2之 尺寸，因此，與第6圖之使用晶圓輪送帶之以往方式相同 流程定時比較，本實施例之寬度尺寸w可縮短3〇%。 第3圖為洗滌工序單元2之要部。沖洗工序單元3亦 為相同構成。各可動蓋22沿前頭所示半導體晶圓丨丨之搬 運方向相應於各個別站23，配置於其等之上方。各可動 蓋22各具有蓋軸21。此等蓋軸21貫穿有導液管。再者， 於可動蓋22設置喷嘴16與導液管連通。此等可動蓋& 設成可上下動。在個別站23設置半導體晶圓u之後，相 對之可動蓋22降下，覆蓋該半導體晶圓n，自喷嘴16 噴射洗劑例如30秒。為使半導體晶圓n不因所喷射之噴 射液而搖動，由夾具將晶圓側面之前後方向端部固定。洗 滌元後，可動蓋22向上方打開，半導體晶圓11由另設之 及盤自半^r體晶圓11之左右提上，移送至次站。可動蓋 22向上打開之期間自前站將另一半導體晶圓11移送至個 別站23。 匕如第4圖所示，要使半導體晶圓11之全表面均能被 喷嘴16所噴射之洗滌液洗滌，在可動蓋22設置1個或多 $個之喷嘴16。噴嘴16對半導體晶圓11之水平面之洗 ^液喷射角度Θ，經過實驗之結果有一適當値。對直徑8 央寸之半導體晶圓11，以1〇度$ 0 $30度之範圍時，洗 10 1243420 蘇效果、絲速度均最佳。噴嘴㈣成為絲液 度㈣水平面1〇度乃至30度搖頭自如，而角度設角 20度最有效。如此設定之喑鉍、* ^ <嘴射冼滌而使用一般洗劑水， 大致3 0秒可完成洗務1張曰η 浪日日固，而可將半導體晶圓u 動至次段個別站23。Unit) back side. Related cleaning method The semiconductor wafer strip cleaning method of the present invention is to continuously set the semiconductor wafer to the cleaning process, the rinsing process, and the drying process successively, and set the cleaning pressure and the ejection amount within a range that does not damage according to a predetermined flow 1243420. The same applies to the washing process unit 3. This implementation sets the depth dimension D and H according to ergonomics_ appropriate size. The size of the washing process unit 2 is determined according to the needs of the timing of the washing process. Therefore, compared with the same process timing of the conventional method of using the wafer wheel to convey the belt in FIG. 6, the width dimension w of this embodiment can be shortened by 30%. FIG. 3 is a main part of the washing process unit 2. FIG. The rinsing process unit 3 has the same configuration. The movable covers 22 are arranged above the respective corresponding stations 23 in the transport direction of the semiconductor wafers 丨 丨 shown in the front. Each of the movable covers 22 includes a cover shaft 21. These cap shafts 21 are passed through the catheter. Furthermore, a nozzle 16 is provided on the movable cover 22 to communicate with the liquid guide tube. These movable covers & are provided to be movable up and down. After the semiconductor wafer u is set at the individual station 23, the movable cover 22 is lowered to cover the semiconductor wafer n, and the lotion is sprayed from the nozzle 16 for, for example, 30 seconds. In order to prevent the semiconductor wafer n from being shaken by the sprayed spray liquid, the end portions of the wafer side are fixed in the front-rear direction by a jig. After washing, the movable cover 22 is opened upward, and the semiconductor wafer 11 is lifted up and down from the half-body wafer 11 by a separate set and transferred to the secondary station. While the movable cover 22 is opened upward, another semiconductor wafer 11 is transferred from the front station to the individual station 23. As shown in FIG. 4, in order to enable the entire surface of the semiconductor wafer 11 to be washed by the washing liquid sprayed from the nozzle 16, one or more nozzles 16 are provided in the movable cover 22. The cleaning liquid spray angle Θ of the horizontal plane of the semiconductor wafer 11 by the nozzle 16 has an appropriate result after experiments. For the semiconductor wafer 11 with a diameter of 8 inches, the washing effect of 10 1243420 and the silk speed are the best when the range is 10 degrees $ 0 $ 30 degrees. Nozzle ㈣ becomes silk liquid degree ㈣ horizontal plane 10 degrees or even 30 degrees to shake the head freely, and the angle of 20 degrees is most effective. In this way, bismuth, * ^ < Mouth shot clean and use general lotion water, can be completed in about 30 seconds, one sheet, η Langri Rigu, and the semiconductor wafer can be moved to the next stage individually Station 23.
僅汉1個喷嘴16時，為無遺漏喷射晶圓全表面，可 使喷嘴16沿晶圓圓周旋轉則較有效。如設多數個喷嘴u 時’則免設沿晶圓圓周旋轉之機構。 晶圓之污扣物質為不易剝離者時，可利用電解水作為 洗滌液杈有效。使用混合鹼性電解離子水與酸性電解離子 水之複合電解離子水時，有可簡化設備而低廉之優點。使 用此複合電解離子水為沖洗液亦有效。When only one nozzle 16 is used, the entire surface of the wafer is sprayed without leakage. It is effective to rotate the nozzle 16 along the circumference of the wafer. If a plurality of nozzles u are provided, then a mechanism for rotating along the circumference of the wafer is unnecessary. When the fouling material of the wafer is difficult to peel off, it is effective to use electrolyzed water as the cleaning liquid branch. When a composite electrolytic ion water containing a mixture of alkaline ionized water and acidic ionized water is used, there is an advantage that the equipment can be simplified and inexpensive. It is also effective to use this composite electrolytic ionized water as a washing solution.
如不使用可動蓋22時，洗滌中之洗滌液及沖洗液飛 濺成務，而過去則由排氣管排出此霧。如使用可動蓋22 時’自洗條液或沖洗液所發生之霧封留於可動蓋22内， 與洗滌液或沖洗液接觸而復原為液體。因此，可節約洗滌 液或沖洗液，亦不污染環境。 於洗務工序單元2、沖洗工序單元3，自第1站至第 2站，再至第3站移送半導體晶圓u，逐一經洗滌工序、 沖洗工序、乾燥工序，按照所決定之流程定時移送半導體 晶圓11。在液泵裝設吐出調整裝置，係為洗滌液及沖洗 液之喷射壓力與噴射液量之強弱調整。而且，此喷射壓力 與噴射液量，每一站有其設定値，並可由各喷射壓力表 29監視’不致發生如以往因壓力過高以致晶圓破損。 11 1243420 移送來之晶圓之固定由在晶圓前後之吸盤所為，以此 '定狀態進行洗滌、沖洗。沖洗之最終工序完成後，移送 至-人站，即於乾燥工序單元4作旋轉乾燥工序。 、、第5圖為本發明實施例之乾燥工序單元4之内部構 成。半導體晶圓π由其下部裝設於旋轉桌28之真空吸著 裝置所固定。於乾燥工序之可動蓋22中央，穿通設自外 部向内部供應乾燥空氣之供應管26。旋轉桌28向^裝設 乾燥空氣供應管27。此等供應管26、27連接於乾燥空氣 產生裝置。由供應管26、27供應乾燥空氣之同時，旋轉 桌28由馬達旋轉。如是，進行脱乾附著於半導體晶圓“ 之液體之旋轉乾燥。此馬達之速度由旋轉控制裝置(無圖 示）控制在3000轉/分之規定速度。如馬達裝設馬達驅動 用電力變頻器，可自如設定旋轉數則更有效。可動蓋22 之上下運動與旋轉動作及乾燥空氣之喷出動作依連動裝 置進行。 弟6圖為本發明之一貫施方式之洗條方法之工序 圖。裝設於料斗之晶圓裝設在裝載單元丨之裝載器時，晶 圓逐一送入洗滌台。首先，移送至洗滌工序單元2之第1 站之固定料斗23。晶圓11由其搬送方向之前後被夾具固 定。可動蓋22下降進行喷射洗滌30秒。其次，可動蓋 22移動至上方，向晶圓11之搬送方向由夾具自左右提上 晶圓11，移送至洗滌工序單元2之第2站之個定站23。 在此’晶圓11亦由爽具自前後固定。可動蓋22下降，曰 圓11被可動蓋22覆蓋，進行噴射洗滌30秒。其次，可 12 1243420 動蓋22上昇，自左右提上之晶圓移送至第3站。以下， 同様在第3站亦進行洗務而完成洗務工序。隨後，客 送至沖洗工序單元3.沖洗工序單元3設前沖洗至^曰整沖 洗之第1乃至第3站，如同洗務工序單元2進行沖洗工序。 當晶圓η完成精整沖洗，即移送至乾燥工序單 之乾燥站之旋轉桌28,由真空吸著裝置固定依旋轉數 麵轉/分㈣、吹乾燥空氣完成離心税 轉數 因為是高速旋轉，無需以往之溫風供應裝置，並轉 =為 產生溫風之燃料及空間。 … 旋轉乾躁後之晶ϋ，移送至其前方之卸裝部而取出。 )上說月係對1片晶圓之處理’而實際上’在各洗滌 工序單元2、沖洗工序單元3、及 = 同時裝載有各晶圓11，此簟曰m "门士平（谷站 定之流程定時由移送機Itr 站間依所決 送機構控制裝置^；構料。該移送機構之㈣則由移If the movable cover 22 is not used, the washing liquid and rinsing liquid splashed during the washing process, and the mist was discharged from the exhaust pipe in the past. For example, when the movable cover 22 is used, the mist generated from the self-washing strip liquid or the washing liquid is sealed in the movable cover 22, and comes into contact with the washing liquid or the washing liquid to be restored to a liquid. Therefore, the washing liquid or the washing liquid can be saved without polluting the environment. In the washing process unit 2 and the washing process unit 3, the semiconductor wafer u is transferred from the first station to the second station and then to the third station, and the wafers are sequentially transferred through the washing process, the washing process, and the drying process in accordance with the determined process. Semiconductor wafer 11. The liquid pump is equipped with a discharge adjustment device, which adjusts the spray pressure and the spray liquid volume of the washing and rinsing liquids. In addition, the ejection pressure and the ejection liquid amount are set at each station, and can be monitored by each ejection pressure gauge 29 'so that wafers are not damaged due to excessive pressure as in the past. 11 1243420 The wafers transferred are fixed by suction cups before and after the wafers, and washed and rinsed in this state. After the final process of rinsing is completed, it is transferred to a person station, that is, a rotary drying process is performed in the drying process unit 4. Fig. 5 is the internal structure of the drying process unit 4 according to the embodiment of the present invention. The semiconductor wafer? Is held by a vacuum suction device having a lower portion thereof mounted on a rotary table 28. In the center of the movable cover 22 in the drying process, a supply pipe 26 for supplying dry air from the outside to the inside is passed through. The rotary table 28 is provided with a dry air supply pipe 27. These supply pipes 26, 27 are connected to a dry air generating device. While the dry air is supplied from the supply pipes 26, 27, the rotary table 28 is rotated by a motor. If so, spin-dry the liquid attached to the semiconductor wafer. The speed of this motor is controlled to a specified speed of 3000 rpm by a rotation control device (not shown). If the motor is equipped with a motor-driven electric inverter The number of rotations can be set freely, which is more effective. The upper and lower movements of the movable cover 22 and the rotation movement and the spraying action of the dry air are performed by a linkage device. Figure 6 is a process diagram of the strip washing method according to one embodiment of the present invention. When the wafer set in the hopper is mounted in the loader of the loading unit, the wafers are sent to the washing table one by one. First, they are transferred to the fixed hopper 23 in the first station of the washing process unit 2. The wafer 11 is moved by The front and back are fixed by a jig. The movable cover 22 is lowered and spray-washed for 30 seconds. Next, the movable cover 22 is moved upward, and the wafer 11 is lifted from the left and right by the jig in the conveying direction of the wafer 11 and transferred to the second of the washing process unit 2 Station 23. Here, the wafer 11 is also fixed from the front and back by the cooler. The movable cover 22 is lowered, and the circle 11 is covered by the movable cover 22, and spray washing is performed for 30 seconds. Secondly, 12 1243420 can be placed on the movable cover 22. The wafers lifted from the left and right are transferred to the third station. Below, the peer also performs the cleaning process at the third station to complete the cleaning process. Subsequently, the passengers are sent to the rinse process unit 3. The rinse process unit 3 is rinsed before setting ^ The first and third stations of the entire cleaning process are performed in the same manner as the cleaning process unit 2. When the wafer η is finished and finished, it is transferred to the rotary table 28 of the drying station of the drying process order, and the vacuum suction device is used. The fixed rotation speed and rotation speed of the centrifugal rotation and the completion of the centrifugal tax rotation speed due to the drying of air are high-speed rotation, which eliminates the need for the previous warm air supply device, and the rotation = fuel and space for generating warm wind. Alas, it is transferred to the unloading section in front of it and taken out.) It was said that the processing of one wafer is "actually" in each washing process unit 2, washing process unit 3, and = each wafer 11 is loaded at the same time This time, m " Men Shiping (Valley Station schedules the flow timing by the transfer machine Itr station according to the control mechanism of the delivery mechanism according to the decision ^; structure. The transfer mechanism of the transfer mechanism by the transfer
13 !24342〇 【圖式簡單說明】 第1圖本發明之一實施方式之洗滌裝置正面圖及 側面圖。 第2圖第1圖之洗滌裝置之洗滌工序單元之概略斜 視圖。 / 第3圖第2圖之一之工作台之放大圖。 第4圖第3圖之一之工作台之詳細放大圖。 第5圖於第1圖之洗滌裝置之乾燥工序單元之概略 構成圖。 第6圖由第1圖之洗滌裝置洗滌之工序圖。 第1 2 3 4 5 6 7圖過去之洗滌裝置之概略構成圖 【主要元件符號說明】 2 洗滌工序單元 4 乾燥工序單元 11、12、13 晶圓 16喷嘴 18搬出口 21蓋軸 23個別站 26、27 供應管 1 裝載單元 3 沖洗工序單元 5 卸裝單元 2 Η運輸帶 3 17搬入口 4 排氣管 5 22可動蓋 6 28旋轉桌 7 29噴射壓力表13! 24342〇 [Brief description of the drawings] FIG. 1 is a front view and a side view of a washing device according to an embodiment of the present invention. Fig. 2 is a schematic perspective view of a washing process unit of the washing device shown in Fig. 1. / Figure 3 is an enlarged view of the table in Figure 2 Figure 4 is a detailed enlarged view of one of the tables in Figure 3. Fig. 5 is a schematic configuration diagram of a drying process unit of the washing device in Fig. 1. FIG. 6 is a process diagram of washing by the washing device of FIG. 1. No. 1 2 3 4 5 6 7 The general structure of a conventional washing device [Description of main component symbols] 2 Washing process unit 4 Drying process unit 11, 12, 13 Wafer 16 Nozzle 18 Carrying port 21 Cover shaft 23 Individual station 26 , 27 supply pipe 1 loading unit 3 washing process unit 5 unloading unit 2 Ηconveyor belt 3 17 loading port 4 exhaust pipe 5 22 movable cover 6 28 rotating table 7 29 injection pressure gauge