JPH0774133A - Substrate treatment apparatus - Google Patents

Abstract

PURPOSE:To wash substrates with a high efficiency and in a short time and, further, suppress the drying of the substrates during a substrate treatment and conveyance. CONSTITUTION:A substrate treating apparatus has a dipping loader 1 which dippes a number of wafers W into pure solution, a rear washing unit 2, a surface washing unit 3 and conveyers 6. The rear washing unit 2 supplies treatment solution to the wafer W taken out of the dipping loader 1 and washes the rear of the wafer W from below with a brush. The surface washing unit 3 supplies agent solution for a chemical treatment to the wafer W after it is washed by the rear washing unit 2 and washes the surface of the wafer W from above with a brush. The conveyers 6 are provided between the dipping loader 1, the rear washing unit 2 and the surface washing unit 3 and convey the wafers W while treatment solution is supplied to the wafers W to keep the wafers W wet.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention relates to a substrate processing apparatus, and more particularly to
The present invention relates to a substrate processing apparatus that processes a substrate taken out from a substrate storage section.

[0002]

2. Description of the Related Art There is an apparatus disclosed in Japanese Patent Laid-Open No. 4-162426 as a substrate processing apparatus for performing a substrate processing such as a cleaning processing on a semiconductor substrate and a substrate such as a glass substrate for a liquid crystal or a photomask. . This apparatus includes a loader carrier that mounts a cassette containing a large number of wafers vertically, a loader transfer robot that takes out a substrate from a substrate storage section on the loader carrier, and a rotating brush mechanism that simultaneously cleans both front and back surfaces of the substrate. And a rotation drying mechanism for rotating and drying the cleaned wafer.

In this substrate processing apparatus, the loader transfer robot takes out the substrates one by one from the substrate storage section placed on the loader carrier. At this time, the substrate housing portion and the substrate are exposed to clean air. Both ends of the substrate taken out by the loader transport robot are supported by the rotating brush mechanism, and the front surface and the back surface are simultaneously cleaned. The cleaned wafer is rotated and dried by the rotary drying mechanism while supporting both end surfaces. The dried wafer is placed on the unloader carrier.

In this substrate processing apparatus, the substrate is transported in the air in a dry state until the substrate is cleaned with pure water.

[0005]

SUMMARY OF THE INVENTION In the above conventional configuration,
While the wafer is being transferred to the cleaning process and while the wafer is on standby before the cleaning process, the wafer is in contact with air and is dry. When the wafer comes into contact with air and is dried, oxygen in the air causes a natural oxide film to grow on the surface of the wafer and particles or chemicals floating in the air to adhere to the surface of the wafer.

Further, in the above-mentioned conventional structure, both sides of the substrate are cleaned at the same time. If the substrates are cleaned simultaneously on both sides, the cleaning efficiency will be poor. That is, the particles removed from the back surface wrap around to the front surface, and the particles removed from the front surface reattach to the surface, resulting in poor cleaning efficiency. In order to improve the cleaning efficiency, it is necessary to clean the back surface and the front surface separately, but in order to clean the back surface and the front surface separately, not only a complicated reversing mechanism for reversing the wafer front and back is required, It takes a long time to invert the wafer, and eventually the substrate cleaning time becomes long.

An object of the present invention is to clean a substrate in a short time with good cleaning efficiency. Another object of the present invention is to suppress the drying of the substrate during processing and transportation of the substrate.

[0008]

Means for Solving the Problems (1) First Aspect of the Present Invention
In the substrate processing apparatus, the substrate holding unit that holds the substrate in the horizontal direction, the brush for cleaning the substrate by contacting the substrate held by the substrate holding unit, and the substrate holding unit held by the substrate holding unit. Further, the substrate is provided with a chemical solution supply unit for supplying a chemical solution for chemical treatment.

The chemical solution is HCl / H.₂O, HC
l / H₂O₂/ H₂O, HF / H₂O, HF / H₂O₂
/ H₂O, HF / NH_FourF / H₂O, NH_FourF / H
₂O, NH_FourOH / H₂O, NH_FourOH / H₂O₂/ H
₂O, H₂SO_Four/ H₂O₂/ H ₂O, HNO₃/ H₂
O, at least one selected from the group of organic alkalis
Is preferred. (2) The second substrate processing apparatus according to the present invention includes a large number of substrates.
Take out the board from the board storage part that stores the
It is a device for processing. This device is the substrate storage
Substrate immersion part for immersing the
The first chemical solution for chemical treatment is applied to the substrate taken out from
A first substrate processing unit for feeding and performing a first process, and the substrate immersion
Is disposed between the first substrate processing unit and the substrate
Substrate transport unit including processing liquid supply means for supplying processing liquid
It has and.

The substrate further comprises a second substrate processing section for performing a second processing by supplying a processing liquid to the substrate before being processed by the first substrate processing section from the substrate housing section. The transport unit is a first transport unit disposed between the substrate dipping and the second substrate processing unit, and a second transport unit disposed between the second substrate processing unit and the first substrate processing unit. It is preferable to have a part. Further, it is preferable that the processing liquid supplied by the second substrate processing unit is a second chemical liquid for chemical processing.

The second substrate processing section is a back surface cleaning substrate processing section for cleaning the lower surface of the substrate from below, and the first substrate processing section has its back surface cleaned by the back surface cleaning substrate processing section. It is preferable that the surface cleaning substrate processing unit cleans the surface of the substrate from above. The substrate has a circular shape, and the first substrate processing unit includes a substrate holding unit that holds the substrate, a rotating arm that is arranged such that a rotation axis intersects with an extending direction of the substrate, and the rotating unit. It is preferable to include a first brush held by an arm and capable of contacting the substrate held by the holding means, and a first rotating means for relatively rotating the substrate and the first brush. The second substrate processing unit is capable of contacting a substrate holding unit that holds the substrate and one surface of the substrate held by the holding unit so that the rotation center axis intersects with the extending direction of the substrate. A second brush disposed on the substrate, a second rotating unit that relatively rotates the substrate and the second brush, and a swinging unit that relatively swings the substrate and the second brush. Is preferred.

The first and second chemicals are HCl / H
₂O, HCl / H₂O₂/ H₂O, HF / H₂O, HF
/ H₂O₂/ H₂O, HF / NH_FourF / H₂O, NH_Four
F / H₂O, NH_FourOH / H₂O, NH_FourOH / H₂O
₂/ H₂O, H₂SO_Four/ H₂O ₂/ H₂O, HNO₃
/ H₂O, at least 1 selected from the group of organic alkalis
It is preferably a seed.

[0013]

(1) In the first substrate processing apparatus according to the present invention, the brush is brought into contact with the substrate laterally held by the substrate holder and the chemical liquid for chemical treatment is supplied to the substrate. Are washed. Here, since physical cleaning with a brush and chemical cleaning with a chemical solution are performed,
High cleaning ability is demonstrated. As a result, the substrate can be cleaned in a short time with good cleaning efficiency.

The chemical solution is HCl / H.₂O, HC
l / H₂O₂/ H₂O, HF / H₂O, HF / H₂O₂
/ H₂O, HF / NH_FourF / H₂O, NH_FourF / H
₂O, NH_FourOH / H₂O, NH_FourOH / H₂O₂/ H
₂O, H₂SO_Four/ H₂O₂/ H ₂O, HNO₃/ H₂
O, at least one selected from the group of organic alkalis
In the case of the above, the above effect becomes more remarkable. (2) In the second substrate processing apparatus according to the present invention, substrate storage
The substrate stored in the unit is placed in the processing liquid by the substrate immersion unit.
Be immersed. Then, the board is taken out from the board storage section,
The taken-out substrate is transferred to the first substrate processing unit by the substrate transfer unit.
Be transported. At this time, the substrate is treated by the treatment liquid supply means
The processing liquid is supplied. The substrate is transferred to the first substrate processing section.
Then, in the first substrate processing unit, the first substrate for chemical processing is applied to the substrate.
A chemical solution is supplied and chemical treatment is performed. Here the substrate
Is immersed in the processing liquid in the substrate dipping section,
Substrate is transported while being wetted by the processing liquid,
Since it is processed while being wet with a chemical solution in the medical department,
The drying of the substrate is suppressed. Moreover, in the first substrate processing unit
And chemical cleaning with chemicals is performed, high cleaning
Purification ability is demonstrated. As a result, cleaning efficiency can be improved in a short time.
The substrate can be cleaned in between.

Further, the substrate processing apparatus further comprises a second substrate processing section for supplying a processing liquid to the substrate which has been taken out of the substrate housing section and has not been processed by the first substrate processing section, for performing a second processing. A transport unit is a first transport unit disposed between the substrate dipping and the second substrate processing unit, and a second transport unit disposed between the second substrate processing unit and the first substrate processing unit. In the same manner as described above, the substrate can be prevented from being dried, and the substrate can be cleaned efficiently and in a short time. Further, when the processing liquid supplied by the second substrate processing unit is the second chemical liquid for the chemical processing, the above-mentioned action becomes more remarkable.

The second substrate processing section is a back surface cleaning substrate processing section for cleaning the back surface of the substrate from below, and the first substrate processing section has its back surface cleaned by the back surface cleaning substrate processing section. In the case of the front surface cleaning substrate processing unit that cleans the front surface of the substrate from above, the back surface cleaning substrate processing unit cleans the back surface of the substrate from below, and the front surface of the substrate after the back surface cleaning is processed into the front surface cleaning substrate. Wash from above. Here, since the front surface cleaning and the back surface cleaning are separately performed, particles are less likely to wrap around and re-adhere, and the cleaning efficiency of the substrate is improved. Further, the substrate cleaning time is short because the substrate is not inverted between the back surface cleaning and the front surface cleaning.

The substrate has a circular shape, the first substrate processing section has a substrate holding means for holding the substrate, a rotating arm arranged so that a rotation axis intersects with an extending direction of the substrate, and A case in which a first brush held by a rotating arm and capable of contacting the substrate held by the holding means and a first rotating means for relatively rotating the substrate and the first brush are provided; The two-substrate processing unit is arranged so that it can contact the substrate holding means for holding the substrate and one surface of the substrate held by the holding means, and the rotation center axes intersect with the extending direction of the substrate. In the case of including a second brush, a second rotating unit that relatively rotates the substrate and the second brush, and a swinging unit that relatively swings the substrate and the second brush, Physical cleaning with brush and chemical cleaning with chemical Accordingly, it is possible to clean the substrate more efficiently.

The first and second chemicals are HCl / H
₂O, HCl / H₂O₂/ H₂O, HF / H₂O, HF
/ H₂O₂/ H₂O, HF / NH_FourF / H₂O, NH_Four
F / H₂O, NH_FourOH / H₂O, NH_FourOH / H₂O
₂/ H₂O, H₂SO_Four/ H₂O ₂/ H₂O, HNO₃
/ H₂O, at least 1 selected from the group of organic alkalis
When it is a seed, the above-mentioned effect becomes more remarkable.

[0019]

1 and 2 show a substrate processing apparatus according to an embodiment of the present invention. This substrate processing apparatus performs cleaning and drying processing on a semiconductor wafer W (an example of a substrate). In these figures, the substrate processing apparatus is shown as a cassette C.
An in-liquid loader 1 that immerses a large number of wafers W stored in (an example of a substrate storage unit) in a processing liquid, and a back surface cleaning device 2 that cleans the back surface (lower surface) of the wafer W taken out from the cassette C with a brush. , A surface cleaning device 3 for brush-cleaning the surface (upper surface) of the wafer W, a liquid cleaning / drying device 4 for cleaning and drying the wafer W, and the processed wafer W stored in another cassette C and discharged. The unloader 5 for doing so is arranged in this order.

Between the loaders 1 and 5 and the devices 2 to 4,
A transfer device 6 having an articulated robot 7 is arranged. The transport device 6 and the loaders 1 and 5 and the devices 2 to 4 may be blocked by a shutter (not shown). Also,
The processing liquid is supplied from the processing liquid supply device 8 to the loader 1 and the devices 2 to 4 and 6 via the control valve 9. The drainage from the loader 1 and the devices 2 to 4 and 6 is recovered by the drainage recovery device 10.

As shown in FIGS. 3 to 5, the submerged loader 1 stores a treatment liquid therein and a treatment liquid tank 11 for immersing the cassette C in the treatment liquid and a treatment liquid tank for the cassette C. It has a cassette elevating device 12 for moving up and down in the inside 11. In this elevating device 12, at least the position where the uppermost wafer W stored in the cassette C is completely immersed in the processing liquid, and the lowermost wafer W stored in the cassette C is processed. Move it up and down between the position where it floats above the liquid. The cassette C has a hollow shape, and an opening 13 for taking in and out the accommodated wafer W is formed on the right front side in FIG.

The processing liquid tank 11 is made of synthetic resin, and a weir 14 whose vertical position can be adjusted is provided on the side surface (the left side in FIG. 4) opposite to the side surface where the opening 13 of the cassette C is arranged to face. (See also FIG. 19). The weir 14 determines the height of the liquid surface in the processing liquid tank 11. Further, a treatment liquid supply port 15 is formed in a portion of the bottom surface of the treatment liquid tank 11 near the opening 13 of the cassette C.
The treatment liquid is supplied from 5 to the treatment liquid tank 11. Further, the supplied processing liquid overflows from the weir 14 and is discharged. Therefore, during supply of the processing liquid, a liquid flow from the opening 13 of the cassette C to the inner side is formed at least near the liquid surface in the processing liquid tank 11. A liquid level gauge 17 using a capacitance sensor 18 is arranged on one side surface of the processing liquid tank 11.

The cassette lifting device 12 is a lifting frame 1.
9 is equipped. The elevating frame 19 is supported by two guide shafts 20 arranged vertically so as to be vertically movable. At the center of the lifting frame 19, a ball nut 21
Are arranged. The ball nut 21 is screwed onto a ball screw 22 extending vertically. The ball screw 22 includes a guide frame 23 that supports the guide shaft 20.
It is rotatably supported by. Ball screw 2
2 is rotationally driven by a motor 26 via a toothed pulley 24 and a toothed belt 25 arranged at the lower end. As a result, the elevating frame 19 is driven up and down.

At both ends of the elevating frame 19, a pair of elevating members 27 made of stainless thin plate members and a vertical member 31 connected to the elevating members 27 are arranged. Each vertical member 31
At the lower end of the cassette is a cassette stand 32 made of a synthetic resin flat plate member
Is attached. Positioning members 33 for positioning the four corners of the cassette C are mounted on the cassette table 32.

Further, the upper end of each elevating member 27 is connected by a connecting member 30, and when the cassette C is immersed in the processing liquid tank 11, the cassette C is lifted up at the center of the connecting member 30. A floating prevention member 44a is provided for prevention. This lifting prevention member 4
4a is composed of a bearing portion 45a fixed to the connecting member 30 and a stopper 47a rotatably coupled to the bearing portion 45a via a shaft 46a.

In the transfer device 6 shown in FIG. 2, nozzles 34 for injecting the processing liquid are provided above the three articulated robots 7 on the upstream side in the transfer direction, as shown in FIGS. 6 and 7. The nozzle 34 is for spraying a processing liquid onto the wafer W adsorbed and held by the articulated robot 7, preventing the wafer W from drying, and suppressing contact between the wafer W and air. The nozzle 34 sprays the processing liquid in a cone shape having a diameter slightly larger than that of the wafer W.

The articulated robot 7 has a vertical column 41 attached to a frame 40 of a substrate processing apparatus, and a base 42 rotatably supported on the vertical column 41 in a horizontal direction.
And a transfer arm 43 supported by the tip of the base 42 so as to be rotatable in the horizontal direction. The articulated robot 7 can take a standby posture shown by a solid line in FIG. 6, a carry-out posture shown by a chain double-dashed line, and a carry-in posture shown by a dotted line. The standby position is a position in which the transfer arm 43 is folded on the base 42. In the carry-out posture, the base 42 turns 90 degrees counterclockwise in FIG.
3 and 3 are in a posture in which they are arranged so as to extend in a straight line. The carry-in posture is a line-symmetrical posture with respect to the carry-out posture with respect to the standby posture.

The vertical column 41 is made of stainless steel and has a substantially cylindrical shape as shown in FIG. Inside the vertical column 41, a rotating shaft 44 rotatably supported by stainless steel bearings 45 and 46 is arranged. A rotary lever 49 made of synthetic resin is fixed to the upper end of the rotary shaft 44, and a rotary drive mechanism including a motor (not shown) is connected to the lower end side. The rotating lever 49 is fan-shaped as shown in FIG. 9, and its outer edge is fixed to the base 42. Therefore, the base 42 and the rotating shaft 44 rotate integrally.

A spur gear 50 made of synthetic resin is fixed to the upper end of the vertical column 41. Therefore, the spur gear 50 rotates integrally with the vertical column 41. Bearings 47 and 48 made of stainless steel are arranged on the outer periphery of the upper end of the vertical column 41. These bearings 47 and 48 are the base 47
Is for rotatably supporting. Base 42
Is made of aluminum and has an outer surface coated with a tetrafluoroethylene resin. The base 42 has a substantially oval shape and has a bearing housing 51 for housing the bearings 47 and 48 at the base thereof. Further, fixed shafts 52 and 53 made of synthetic resin are erected on the tip and the middle of the base 42. An intermediate gear 54 made of synthetic resin that meshes with the spur gear 50 is rotatably supported on the fixed shaft 53 at the intermediate portion. The intermediate gear 54 is a gear having a two-piece structure that can be adjusted to remove backlash. A pinion 55 made of synthetic resin is rotatably supported on the fixed shaft 52 at the tip. The pinion 55 has a boss portion 56 on the upper portion, and the base end of the transfer arm 43 is fixed to the upper end of the boss portion 56.

The rotary lever 49 and the spur gear 5 are
0, the intermediate gear 54 and the pinion 55 are covered with a synthetic resin cover 57 screwed around the base 42. The transfer arm 43 is made of a thin plate member made of stainless steel, and inside the transfer arm 43, a suction hole 58 is formed which opens to the upper surface of the tip of the transfer arm 43 and extends from there to the fixed shaft 52. Further, suction holes 59 and 60 are also formed in the shaft centers of the fixed shaft 52 and the fixed shaft 53. A suction hole 61 is also formed in the base 42 so as to connect the suction holes 59 and 60. Further, a suction hole 62 is also formed in the axis of the rotating shaft 44, and the suction hole 62 and the suction hole 60 are connected by a suction pipe 63.

As shown in FIG. 10, one end of a negative pressure pipe 64 is connected to the base end of the rotary shaft 44. The suction holes 58 to 62, the suction pipe 63, and the negative pressure pipe 64 constitute a suction path 65. The other end of the negative pressure pipe 64 is connected to the negative pressure generator 66. The negative pressure generator 66
It is an aspirator system, and negative pressure is generated by high-pressure air from an air source 67 connected to the negative pressure generator 66. A vacuum gauge 69 with a lower limit contact is connected to the negative pressure generation unit 66 via a measurement pipe 68. An open pipe 70 open to the atmosphere is connected near the vacuum gauge 69 in the measuring pipe 68. An electromagnetic control type on / off valve 71 is arranged in the open pipe 70. This open pipe 70
This is for removing the processing liquid that has entered the measurement pipe 68 from the adsorption path 65.

A gas-liquid separator 72 is connected to the downstream side of the negative pressure generator 66. The gas-liquid separator 72 is for separating the liquid component contained in air and air.
An exhaust pipe 73 and a drain pipe 74 are provided downstream of the gas-liquid separator 72.
Connected to. Here, when the wet wafer W is adsorbed at the tip of the transfer arm 43, the liquid enters the adsorption path 65. The invading liquid flows from the negative pressure generating unit 66 to the gas-liquid separator 72. The air separated by the gas-liquid separator 72 is discharged to the exhaust pipe 73, and the liquid component is discharged to the drain pipe 74. Further, part of the liquid also enters the measurement pipe 68. When the processing liquid stays in the measurement pipe 68, the measurement by the vacuum gauge 69 becomes impossible. Therefore, the on / off valve 71 is opened immediately before the measurement by the vacuum gauge 69, the measurement pipe 68 is opened to the atmosphere, and the processing liquid in the measurement pipe 68 is opened. Is discharged to the negative pressure generating portion 66 side.

The backside cleaning device 2 is, as shown in FIG.
A wafer gripping mechanism 80 for gripping and swinging the wafer W;
It has a brush cleaning mechanism 81 that contacts the back surface of the wafer W to clean the back surface of the wafer W, and a surface cleaning nozzle 82 that sprays a processing liquid onto the front surface of the wafer W. The wafer gripping mechanism 80 rotates the wafer W in a planetary rotation in the direction of arrow A without absolutely rotating the wafer W, and has a pair of gripping portions 83 and 84 arranged to face each other. The grip portions 83 and 84 are grip claws 8 arranged at intervals along the outer periphery of the wafer W.
5 and 86 and grip arms 87 and 88 that support the grip claws 85 and 86 at their tips.

The holding arm 88 on the far right side of FIG. 11 is fixed to the upper end of a holding bracket 89. The grip arm 87 on the front left side of the drawing is fixed to the upper end of the pressing bracket 90. The pressing bracket 90 is supported by a gripping bracket 91 arranged on the left front side of the drawing so that the pressing bracket 90 can come into contact with and separate from the holding bracket 91. This pressing bracket 90 always has a spring 92.
Is urged in the direction of pressing the wafer W.

Further, as shown in FIG. 12, the grip claws 85 and 86 respectively have abutting surfaces 93 and 94 for gripping the wafer W by the urging force of the spring 92 at their lower portions. The grip claws 85 and 86 gradually become thicker in the left-right direction of the drawing as they go upward from the contact surfaces 93 and 94. Also, the contact surface 9
3, 94 form a part of the same cylindrical surface centered on the center of the wafer W, and can abut on the outer peripheral edge of the wafer W, respectively. Therefore, when the gripping claws 85 and 86 grip the wafer W, the entire back surface of the wafer W is exposed downward.

As shown in FIG. 13, each of the holding brackets 89, 91 is an L-shaped flat plate member, and the lower part thereof is supported by the swing frame 95 so as to be contactable and separable in the arrow B direction. Two air cylinders 97, 96 for bringing the holding brackets 89, 91 into and out of contact with each other are fixed on both sides of the swing frame 95. Further, on both sides of the swing frame 95, contact / separation guide portions 99, 98 for supporting the grip frames 89, 91 in a freely contactable / separable manner are provided.

The bearing 10 is provided on the back surface of the swing frame 95.
0 and 101 are arranged at intervals. Bearing 10
0 and 101 rotatably support the tip ends of swing shafts 102 and 103 having eccentric cams 104 (only one of which is shown) at the top. When the swing shafts 102 and 103 rotate, the swing frame 95 makes an eccentric swing motion in the arrow A direction by the action of the eccentric cam 104. As a result, the grip claw 8
The wafer W held by 5, 86 swings.

The swing shafts 102 and 103 are eccentric cams 104.
Upper elevating frame 106 arranged below the lower part and lower elevating frame 1 arranged below the swing shafts 102, 103.
It is rotatably supported by 08. Further, it is supported rotatably and vertically movable by an upper fixed frame 107 arranged between the upper lift frame 106 and the lower lift frame 108.

A swinging motor 111 fixed to a bracket 110 extending downward from the lower lifting frame 108 is connected to the lower end of the swinging shaft 102 on the left front side in FIG. The driving force of the swinging motor 111 is transmitted to the other swinging shaft 103 via a pulley 112, a timing belt 113 and a pulley 114 arranged between the lower lifting frame 108 and the motor 111. Therefore, the swing shaft 102 and the swing shaft 103 rotate in the same direction in synchronization with each other.

The upper fixed frame 107 and the lower fixed frame 109 are connected by guide shafts 115 and 116. The guide shafts 115 and 116 are the lower lifting frame 1
08 is supported so that it can be raised and lowered. Also, the upper guide shaft 115
The screw shaft 117 is disposed between the guide shaft 16 and the guide shaft 16. The screw shaft 117 is rotatably supported by the upper fixed frame 107 and the lower fixed frame 109. The screw shaft 117 is screwed into a female screw (not shown) provided on the lower elevating frame 108, and is rotationally driven by an elevating motor 118 fixed to the lower fixed frame 109.
The rotation of the motor 118 drives the lower elevating frame 108 up and down. As a result, the wafer W is moved to the arrow C
Can be moved up and down in any direction.

The brush rotating mechanism 81 includes a circular brush 120 as shown in FIG. Circular brush 120
Is fixed to the upper end of the rotary shaft 121. Rotating shaft 12
1 is rotatably supported by a cylindrical shaft support portion 122 arranged concentrically with the rotation shaft 121. Shaft support 12
The lower end of 2 is fixed to the device frame 40. The driving force of the motor 124 is transmitted to the rotating shaft 121 via a transmission mechanism 123 including a pulley and a timing belt. As a result, the circular brush 120 is rotationally driven in the direction of arrow D with respect to the wafer W.

At the lower end of the rotary shaft 121, the rotatable joint 12
5 is attached. The rotatable joint 125 has a liquid flow hole 126 formed in the center of the rotary shaft 121 over the entire length.
Communicates with the bottom edge of. The circular brush 120 has a configuration in which a large number of nylon fibers are planted, and the processing liquid supply nozzle 127 communicating with the upper end of the liquid flow hole 126 is provided in the center thereof.
Are arranged. When the processing liquid is discharged from the nozzle 127 during cleaning, the discharged processing liquid flows toward the outer peripheral side of the circular brush 120 due to centrifugal force. As a result, the particles removed by the circular brush 120 can be efficiently removed.
Further, when the processing liquid is discharged from the nozzle 127 during standby,
The discharged processing liquid flows toward the outer peripheral side of the circular brush 120 due to centrifugal force. This makes it possible to reliably remove the particles attached to the circular brush 120 and prevent the circular brush 120 from drying during standby.

The surface cleaning device 3, as shown in FIG.
Wafer elevating / rotating mechanism 130 for gripping wafer W to raise / lower and rotate it; brush cleaning mechanism 131 for contacting the surface of wafer W to clean the surface of wafer W;
And a treatment liquid ejecting mechanism 132 for ejecting the treatment liquid onto the surface of the. The wafer lifting / lowering rotation mechanism 130 has a plurality of grip claws 133 that grip the side surface of the wafer W. The grip claw 133 is raised and lowered and rotated by the wafer raising and lowering rotation unit 134.

The brush cleaning mechanism 131 has an arm 135. The arm 135 is configured such that the tip thereof swings from the center of the wafer W toward the outer periphery. A downward circular brush 136 is rotatably arranged at the tip of the arm 135. With the arm 135 placed at the standby position shown by the chain double-dashed line in the figure, the circular brush 1
A cleaning nozzle 137 for cleaning the circular brush 136 is arranged at a position facing 36. The cleaning nozzle 137 can remove particles attached to the circular brush 136.

The processing liquid ejecting mechanism 132 has a nozzle supporting arm 138 which moves up and down and swings. An ultrasonic nozzle 139 for ejecting a processing liquid vibrated by ultrasonic waves is arranged at the tip of the nozzle support arm 138 so as to eject the processing liquid obliquely downward toward the center of the wafer W. The injection angle can be adjusted. On the lower surface of the wafer W, a back surface cleaning nozzle 140 for removing particles that go around from the front surface to the back surface during cleaning is arranged.
The back surface cleaning nozzle 140 sprays the processing liquid onto the back surface of the wafer W in two directions. As shown in FIG. 16, the liquid washing / drying device 4 includes a wafer lifting / lowering rotation mechanism 141 similar to the surface cleaning device 3, a rinse nozzle 142 that can project and retract in the radial direction with respect to the surface of the wafer W, and a center of the wafer W. And a gas nozzle 143 for injecting nitrogen gas. The wafer elevating / rotating mechanism 141 has a plurality of grip claws 144 for gripping the side surface of the wafer W. This grip claw 144
Grips the wafer W, and the wafer elevating / rotating mechanism 141 spins the wafer W at a low speed while spraying the processing liquid from the rinse nozzle 142 to wash the liquid, and then rotates the wafer W at a high speed to perform draining and drying.

Further, the liquid washing / drying device 4 is also provided with a back surface cleaning nozzle 145 for removing particles sneaking around from the front surface to the back surface. The reason why the rinse nozzle 142 can be projected and retracted is to prevent the wafer W from getting wet due to dripping when not in use. In the substrate processing apparatus configured as described above, the processing liquid is always supplied between the submerged loader 1 and the liquid washing / drying apparatus 4 during transportation and processing, so that the wafer W can be prevented from being dried and the wafer W can be prevented. It is possible to suppress the contact of W with air.

The treatment liquid is pure water or isopropyl alcohol.
Uses cleaning liquid such as coal and chemical liquid for the chemical treatment
can do. Acid as a chemical for chemical treatment
Aqueous or alkaline ones can be used. For example, H
Cl / H₂O, HCl / H₂O₂/ H₂O, HF / H₂
O, HF / H₂O₂/ H₂O, HF / NH_FourF / H
₂O, NH_FourF / H₂O, NH_FourOH / H₂O, NH_Four
OH / H₂O₂/ H₂O, H₂SO_Four/ H₂O₂/ H₂
O, HNO₃/ H₂O, organic alkali (choline, TMA
H). In particular, HCl / H₂O, HCl / H
₂O₂/ H₂O, HF / H₂O, NH_FourOH / H₂O₂
/ H₂O, H₂SO_Four/ H₂O₂/ H₂O is preferred.
Of these, focusing on the effect of removing metal impurities, HCl /
H₂O, HCl / H₂O₂/ H₂O, HF / H₂O, H
F / H₂O₂/ H₂O, HF / NH_FourF / H₂O, NH
_FourF / H₂O, H₂SO_Four/ H₂O₂/ H₂O, HNO
₃/ H ₂O is preferred. Especially HF / H₂O, HF / H
₂O₂/ H₂O, HF / NH_FourF / H₂O is preferred.
Also, HCl / H₂O₂/ H₂O is also preferred. On the other hand,
-Focus on TF / H₂O, HF
/ H₂O₂/ H₂O, HF / NH_FourF / H₂O, NH_Four
F / H₂O, NH_FourOH / H₂O, NH_FourOH / H₂O
₂/ H₂O, H₂SO_Four/ H₂O₂/ H₂O, HNO₃
/ H₂O, organic alkali (choline, TMAH) is preferred
Yes. Focus on both metal impurity removal and particle removal
Then HF / H₂O, HF / H₂O₂/ H₂O, HF
/ NH_FourF / H₂O, NH_FourF / H₂O, H₂SO_Four/
H₂O₂/ H₂O, HNO₃/ H₂O is preferred. Special
HF / H₂O, HF / H₂O₂/ H₂O is preferred
Yes.

Next, the operation of the above substrate processing apparatus will be described. Cassette C containing a large number of wafers W vertically
By the positioning member 33, the cassette base 3 of the submerged loader 1
When it is positioned and placed at 2, the elevating frame 10 descends and the cassette C is immersed in the processing liquid tank 11. At this time, the processing liquid is being supplied from the processing liquid supply port 15. The supplied processing liquid overflows from the weir 14. As a result, in the vicinity of the liquid surface of the processing liquid tank 11, the opening 1 of the cassette C is opened.
A liquid flow from 3 to the back side is formed. Therefore, when the elevating frame 19 descends, each wafer W receives the urging force of the liquid flow, and the wafer W does not slip out of the cassette C.

When the wafer W is supplied to the back surface cleaning device 2, the immersed cassette C is moved to the cassette lifting device 1.
Increases by 2. Then, the cassette lifting device 12 is stopped in a state in which the wafer W to be carried out is positioned slightly above the take-out position. Subsequently, the rotation shaft 44 of the articulated robot 7 is rotated counterclockwise in FIG. 9 by a motor (not shown), and the base 42 is rotated counterclockwise via the rotation lever 49. Then, the spur gear 50 fixed to the base 42 rotates together with the base 42, and rotationally drives the pinion 55 via the intermediate gear 54. When the pinion 55 rotates, the transfer arm 58 turns. And the base 42
When is rotated 90 ° counterclockwise, the base 42 and the swivel arm 43 are brought into a carrying-out posture (the posture indicated by the chain double-dashed line in FIG. 6). Then, the cassette elevating device 12 is slightly lowered to receive the wafer W on the transfer arm 43 of the articulated robot 7.

Here, the inside of the suction path 65 is set to a negative pressure to hold the wafer W by suction. Further, the on / off valve 71 is instantly opened to open the measurement pipe 68 to the atmosphere. As a result, the liquid that has entered and accumulated in the measurement pipe 68 is discharged, and the vacuum system 69 is discharged.
With this, negative pressure can be confirmed. Then, it is checked whether or not the lower limit contact of the vacuum system 69 is turned on.
When the lower limit contact is on, the negative pressure is not sufficient and the device is stopped.

When a normal negative pressure is detected and the wafer W is suctioned normally, the rotating shaft 44 is rotated in the reverse direction (clockwise in FIG. 9) to move the base 42 in the reverse direction. 90
° Rotate. As a result, the transfer arm 43 is moved to the base 42.
It will be in the standby position that is located above. Here, the submerged loader 1
When the wafer W is received and taken out from the wafer W, the wafer W does not come into sliding contact with the transfer device 6 and the cassette C. Therefore, generation of particles due to wear can be prevented.

The waiting posture of the articulated robot 7 is maintained until the conveyance request is received from the back surface cleaning device 2. During this time,
The processing liquid is sprayed from the nozzle 34. Therefore, the wafer W is not dried during transportation and standby, and it is possible to prevent oxidation caused by contact with air, adhesion of particles or chemicals, and the like. When a conveyance request is issued from the back surface cleaning device 2, the rotation shaft 44 further rotates clockwise by 90 °. Then, the carrying arm 43 is brought into the carrying-in posture in which the carrying arm 43 extends to the back surface cleaning device 2 side,
The tip thereof is arranged at the central position of the back surface cleaning device 2. At this time, on the back surface cleaning device 2 side, the air cylinders 96, 97
Advances and grips the wafer W by the gripping claws 85 and 86. Further, the articulated robot 7 returns to the standby posture.

Subsequently, the wafer gripping mechanism 80 is moved to the motor 11
Then, the back surface of the wafer W is brought into contact with the rotating circular brush 120. In this state, the motor 124 is rotationally driven to swing the wafer W so that the peripheral edge of the circular brush 120 is inscribed in the peripheral edge of the wafer W. At this time,
By supplying the processing liquid also to the surface of the wafer W by the surface cleaning nozzle 82, drying of the surface of the wafer W and adhesion of particles are prevented.

Here, the wafer W with respect to the claws 85 and 86 is
Does not slip, so that damage to the wafer W and particles are not caused by the slip. Moreover, since the back surface of the wafer W is completely exposed downward, the entire back surface of the wafer W can be reliably cleaned. Moreover, the circular brush 120 and the nail 8
Since there is no buffer with 5,86, the life of the brush is long. Further, the circular brush 120 is set to be larger than the radius of the wafer W and smaller than the diameter, and the circular brush 12
Since the wafer W swings so that the peripheral edge of 0 is inscribed in the peripheral edge of the wafer W, particles are unlikely to reattach and are efficiently removed. Moreover, since the processing liquid discharged from the nozzle 127 flows toward the outer peripheral side of the wafer W due to the centrifugal force,
The particles can be washed off more efficiently, and the effect of preventing particles from reattaching is high. The particles that go around from the back surface to the front surface are removed by the nozzle 82.

When the cleaning of the back surface of the wafer W is completed, the wafer gripping mechanism 80 moves up. Then, the articulated robot 7 arranged between the back surface cleaning device 2 and the front surface cleaning device 3
The wafer W is received and conveyed to the surface cleaning apparatus 3. Note that the processing liquid is sprayed from the nozzles 34 onto the wafer W even during the standby during this time, and the oxidation and drying of the wafer W are prevented.
In the surface cleaning apparatus 3, the wafer lifting / lowering rotation mechanism 130 rises and the grip claws 133 grip the wafer W. Subsequently, the wafer W rotates, and the processing liquid is ejected onto the surface of the wafer W from the ultrasonic nozzle 139 while swinging the nozzle support arm 138. At the same time, the circular brush 136 rotates while the arm 1
35 swings to clean the surface of the wafer W.

At this time, the arm 135 descends near the center of the wafer W to bring the circular brush 136 into contact with the surface of the wafer W. In this state, the arm 135 moves in the outer peripheral direction of the wafer W. When the circular brush 136 reaches the outer peripheral portion,
The arm 135 moves up. The wafer W is cleaned by repeating this cycle during cleaning. During the cleaning, the back surface cleaning nozzle 145 sprays the processing liquid onto the back surface of the wafer W. As a result, particles that go around from the front surface to the back surface are removed. Further, when the arm 135 is at the standby position (two-dot chain line in FIG. 15), the processing liquid is ejected from the cleaning nozzle 137 toward the circular brush 136. As a result, the particles attached to the circular brush 136 can be removed.

Here, the circular brush 136 is brought into contact with the center of the surface of the rotating wafer W, and the circular brush 136 is moved in the radial direction. By this movement and rotation of the wafer W, particles generated by the circular brush 136 rubbing the wafer W are efficiently discharged to the outer peripheral side of the wafer W. The circular brush 136 and the ultrasonic nozzle 139 do not have to be operated at the same time. If one of them is sufficient, it is possible to operate them independently. Moreover, since the ejection angle of the ultrasonic nozzle 139 can be adjusted, particles can be removed more efficiently.

When the cleaning of the surface of the wafer W is completed, the articulated robot 7 arranged between the surface cleaning device 3 and the liquid washing / drying device 4 receives the wafer W and transfers it to the liquid washing / drying device 4. The processing liquid is sprayed from the nozzle 34 onto the wafer W even during the standby period, and the wafer W is prevented from being oxidized and dried. In the liquid washing / drying apparatus 4, the wafer lifting / lowering rotation mechanism 141
Moves upward, and the grip claw 144 grips the wafer W. Then, the rinse nozzle 142 advances and jets the processing liquid, and the back surface cleaning nozzle 145 jets the processing liquid to the back surface.
The wafer W is rotated in this state. Then, after a predetermined time, the injection of the processing liquid from the nozzles 142 and 145 is completed,
Finish the liquid washing.

Then, the wafer W is rotated at a high speed. As a result, the liquid components adhering to the front surface and the back surface of the wafer W are blown in the outer peripheral direction of the wafer W, and the liquid draining and drying processing of the wafer W is performed. Finally, nitrogen gas is ejected from the gas nozzle 143 to remove the liquid component remaining in the center of the wafer W. The nitrogen gas may be jetted while the wafer W is rotating. Further, the jetting may be performed not only on the central portion of the wafer W but also on the entire surface.

When the liquid draining and drying of the wafer W is completed, the articulated robot 7 arranged between the liquid washing / drying device 4 and the unloader 5 receives the wafer W and transfers it to the unloader 5. The unloader 5 stores the received wafer W in another cassette C. When all the wafers W in the supply-side cassette C have been processed and accommodated in the accommodation-side cassette C, the cassette C on the unloader 5 is ejected.

Here, in the steps up to the liquid washing / drying apparatus 4, the wafer W is always in a wet state during transportation and processing. Therefore, it is possible to prevent the wafer W from being dried, and to prevent the wafer W from being oxidized due to contact with air, particles from being fixed to the wafer W, and the like. Other Embodiments (a) The present invention can be similarly implemented in a substrate processing apparatus for processing a glass substrate for liquid crystal or photomask. (B) A nozzle or a slit for ejecting the treatment liquid is provided in the vicinity of the liquid surface of the side wall facing the opening 13 of the treatment liquid tank 11 in addition to the treatment liquid supply port 15 to form a liquid flow from the opening 13 to the inner side. You may do it. Further, the treatment liquid supply port 15 itself may be provided on the side wall of the treatment liquid tank 11 to form a liquid flow. Further, a liquid flow may be formed by providing a forced drainage hole instead of the weir 14 on the side surface on the weir 14 side. (C) Instead of swinging the wafer gripping mechanism, a circular brush may be swung. Alternatively, both may be rocked. (D) The shape of the gripping claw has a contact surface that contacts the peripheral edge of the wafer W and a convex portion that restricts the upward movement of the wafer W, and the lower surface of the wafer W can contact the entire circular brush. Any shape may be used as long as it has a shape and can hold the wafer. (E) The grip claw may be configured by the roller 200 as shown in FIGS. 17 and 18. Each roller 200 has a gripping arm 87 (88) via a support shaft 201 extending in the vertical direction.
It is rotatably supported by. An annular groove 202 is formed on the outer peripheral surface of the roller 200, and the annular groove 202 holds the wafer W.

Here, by the rotating force of the circular brush,
The slight rotation of the wafer W provides the opportunity for the entire outer peripheral surface of the wafer W to be cleaned by the circular brush. (F) Configuration of FIGS. 11 and 12 or FIGS. 17 and 1
In the configuration of FIG. 8, when the wafer W is cleaned by the circular brush 120, the bias of the air cylinder 96 in the holding direction of the holding frame 91 may be intermittently stopped. Thus, by allowing a slight rotation of the wafer W, the edge of the wafer W can be reliably cleaned over the entire circumference. (G) In addition to the ultrasonic nozzle 139, a nozzle for discharging a chemical liquid for chemical treatment may be provided, and the treatment liquid may be supplied from the ultrasonic nozzle 139. (H) A plurality of types of treatment liquids may be sequentially used during the treatment with the treatment liquids. For example, the circular brush 120
When the back surface of the wafer W is cleaned by the method described above, pure water and a chemical solution for chemical treatment may be sequentially used. In this case, it is possible to adopt a configuration in which the chemical solution treatment is performed prior to the cleaning operation by the circular brush 120, a configuration in which the chemical solution treatment is performed during the cleaning operation by the circular brush 120, or a configuration in which the chemical solution treatment is performed after the cleaning operation by the circular brush 120. it can. In addition, when cleaning the surface of the wafer W with the circular brush 136, pure water and a chemical solution for chemical treatment may be sequentially used. In this case, it is possible to adopt a configuration in which the chemical solution treatment is performed prior to the cleaning operation by the circular brush 136, a configuration in which the chemical solution treatment is performed during the cleaning operation by the circular brush 136, or a configuration in which the chemical solution treatment is performed after the cleaning operation by the circular brush 136. it can.

[0063]

(1) First substrate processing apparatus according to the present invention
The substrate is held horizontally by the substrate holder.
Is contacted by a brush, and chemicals for chemical treatment are supplied.
As the substrate is cleaned by cleaning,
The substrate can be cleaned in between. In addition, the chemical solution is
HCl / H₂O, HCl / H₂O₂/ H₂O, HF / H
₂O, HF / H₂O₂/ H₂O, HF / NH_FourF / H₂
O, NH_FourF / H₂O, NH_FourOH / H₂O, NH_FourO
H / H₂O₂/ H₂O, H₂SO_Four/ H₂O₂/ H
₂O, HNO₃/ H₂O, selected from the group of organic alkalis
The effect is more remarkable when it is at least one
Become. (2) In the second substrate processing apparatus according to the present invention, the substrate is a base.
It is dipped in the treatment liquid in the plate dipping section and then placed in the substrate transfer section.
In addition, the substrate is transferred while being wetted by the processing liquid.
Since the treatment is performed while being wetted by the treatment liquid in
The drying of the board is suppressed. Moreover, the first substrate processing section
Therefore, chemical cleaning is performed using chemicals, so cleaning efficiency
The substrate can be cleaned well in a short time.

Further, the substrate processing apparatus further comprises a second substrate processing section for performing a second processing by supplying a processing liquid to the substrate that has been taken out of the substrate housing section and has not been processed by the first substrate processing section. A transport unit is a first transport unit disposed between the substrate dipping and the second substrate processing unit, and a second transport unit disposed between the second substrate processing unit and the first substrate processing unit. In the same manner as described above, the substrate can be prevented from being dried, and the substrate can be cleaned efficiently and in a short time. Further, when the processing liquid supplied by the second substrate processing unit is the second chemical liquid for the chemical processing, the effect becomes more remarkable.

The second substrate processing unit is a back surface cleaning substrate processing unit for cleaning the back surface of the substrate from below, and the first substrate processing unit has the back surface cleaned by the back surface cleaning substrate processing unit. In the case of the surface-cleaning substrate processing unit that cleans the surface of the substrate from above, particles are less likely to wrap around and re-adhere, and the cleaning efficiency of the substrate is improved. Further, the substrate cleaning time is short because the substrate is not inverted between the back surface cleaning and the front surface cleaning.

The substrate has a circular shape, the first substrate processing section has a substrate holding means for holding the substrate, a rotating arm arranged so that a rotation axis intersects with an extending direction of the substrate, and A case in which a first brush held by a rotating arm and capable of contacting the substrate held by the holding means and a first rotating means for relatively rotating the substrate and the first brush are provided; The two-substrate processing unit is arranged so that it can contact the substrate holding means for holding the substrate and one surface of the substrate held by the holding means, and the rotation center axes intersect with the extending direction of the substrate. In the case of including a second brush, a second rotating unit that relatively rotates the substrate and the second brush, and a swinging unit that relatively swings the substrate and the second brush, Physical cleaning with brush and chemical cleaning with chemical Accordingly, it is possible to clean the substrate more efficiently.

The first and second chemical solutions are HCl / H
₂O, HCl / H₂O₂/ H₂O, HF / H₂O, HF
/ H₂O₂/ H₂O, HF / NH_FourF / H₂O, NH_Four
F / H₂O, NH_FourOH / H₂O, NH_FourOH / H₂O
₂/ H₂O, H₂SO_Four/ H₂O ₂/ H₂O, HNO₃
/ H₂O, at least 1 selected from the group of organic alkalis
In the case of seeds, the above effect becomes more remarkable.

[Brief description of drawings]

FIG. 1 is a perspective view of a substrate processing apparatus in which an embodiment of the present invention is adopted.

FIG. 2 is a schematic vertical sectional view thereof.

FIG. 3 is a perspective partial view of a submerged loader.

FIG. 4 is a vertical sectional view of the submerged loader.

FIG. 5 is a plan view of the submerged loader.

FIG. 6 is a plan view of the transfer device.

FIG. 7 is a side view of the transfer device.

FIG. 8 is a partially cutaway side view of the articulated robot.

FIG. 9 is a partially cutaway plan view of the articulated robot.

FIG. 10 is a piping diagram of an articulated robot.

FIG. 11 is a perspective partial view of a back surface cleaning device.

FIG. 12 is a vertical cross-sectional partial view thereof.

FIG. 13 is a perspective view of a wafer gripping mechanism.

FIG. 14 is a partially cutaway perspective view of the brush rotating mechanism.

FIG. 15 is a partial perspective view of the surface cleaning device.

FIG. 16 is a perspective partial view of a liquid washing / drying device.

FIG. 17 is a partial plan view of a modified example of the back surface cleaning device.

FIG. 18 is a side view of the roller.

FIG. 19 is a perspective view of a processing liquid tank.

[Explanation of symbols]

 1 Submersible loader 2 Back surface cleaning device 3 Front surface cleaning device 6 Transfer device 7 Articulated robot

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI technical display location B08B 11/04 2119-3B H01L 21/027 21/68 A // G02F 1/13 101 (72) Inventor Masami Sawamura 2426-1 Kuchinogawara, Mikami, Yasu-cho, Yasu-gun, Shiga Prefecture Dainippon Screen Mfg. Co., Ltd. Yasu Plant

Claims (9)

[Claims] 1. A substrate holding unit for holding a substrate in a horizontal direction, a brush for cleaning the substrate by contacting the substrate held by the substrate holding unit, and a brush held by the substrate holding unit. A substrate processing apparatus comprising: a chemical solution supply unit that supplies a chemical solution for a chemical treatment to the substrate. 2. The chemical solution is HCl / H ₂ O, HCl / H
₂ O ₂ / H ₂ O, HF / H ₂ O, HF / H ₂ O ₂ / H ₂
O, HF / NH ₄ F / H ₂ O, NH ₄ F / H ₂ O, NH
₄ OH / H ₂ O, NH ₄ OH / H ₂ O ₂ / H ₂ O, H ₂
The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is at least one selected from the group consisting of SO ₄ / H ₂ O ₂ / H ₂ O, HNO ₃ / H ₂ O, and organic alkali. 3. A substrate processing apparatus that takes out and processes the substrates from a substrate storage unit that stores a large number of substrates in a multi-tiered manner, the substrate immersion unit immersing the substrate storage unit in a processing liquid, and the substrate. The substrate taken out from the storage unit is disposed between the first substrate processing unit that supplies the first chemical liquid for the chemical treatment to perform the first treatment, and the substrate immersion unit and the first substrate processing unit, A substrate processing apparatus, comprising: a substrate transfer unit having a processing liquid supply means for supplying a processing liquid to the substrate. 4. A second substrate processing section for performing a second processing by supplying a processing liquid to the substrate that has been taken out of the substrate housing section and has not been processed by the first substrate processing section, the substrate further comprising: The transport unit is a first transport unit disposed between the substrate dipping and the second substrate processing unit, and a second transport unit disposed between the second substrate processing unit and the first substrate processing unit. The substrate processing apparatus according to claim 3, further comprising: 5. The substrate processing apparatus according to claim 4, wherein the processing liquid supplied by the second substrate processing unit is a second chemical liquid for chemical processing. 6. The second substrate processing unit is a back surface cleaning substrate processing unit that cleans the lower surface of the substrate from below, and the first substrate processing unit cleans the back surface by the back surface cleaning substrate processing unit. The substrate processing apparatus according to claim 5, which is a surface cleaning substrate processing unit that cleans the surface of the cleaned substrate from above. 7. The substrate is circular; the first substrate processing section includes substrate holding means for holding the substrate, and a rotating arm arranged so that a rotation axis intersects with an extending direction of the substrate. A first brush held by the rotating arm and capable of contacting the substrate held by the holding unit; and a first rotating unit that relatively rotates the substrate and the first brush. Item 7. The substrate processing apparatus according to any one of items 4 to 6. 8. The substrate has a circular shape; the second substrate processing section is capable of contacting a substrate holding means for holding the substrate and one surface of the substrate held by the holding means, and extending the substrate. A second brush arranged such that the central axis of rotation intersects with the present direction; a second rotating means for relatively rotating the substrate and the second brush; and a relative swing between the substrate and the second brush. The substrate processing apparatus according to any one of claims 4 to 7, further comprising: a swinging unit that moves the substrate. 9. The first and second chemicals are HCl / H
₂O, HCl / H₂O₂/ H₂O, HF / H₂O, HF
/ H₂O₂/ H₂O, HF / NH_FourF / H₂O, NH_Four
F / H₂O, NH_FourOH / H₂O, NH_FourOH / H₂O
₂/ H₂O, H₂SO_Four/ H₂O ₂/ H₂O, HNO₃
/ H₂O, at least 1 selected from the group of organic alkalis
9. The substrate treatment according to claim 5, which is a seed.
Processing equipment.