CN204625835U - A kind of polycrystalline silicon ingot or purifying furnace crucible - Google Patents
A kind of polycrystalline silicon ingot or purifying furnace crucible Download PDFInfo
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- CN204625835U CN204625835U CN201520354317.5U CN201520354317U CN204625835U CN 204625835 U CN204625835 U CN 204625835U CN 201520354317 U CN201520354317 U CN 201520354317U CN 204625835 U CN204625835 U CN 204625835U
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- crucible
- bottom plate
- crucible bottom
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Abstract
The utility model discloses a kind of polycrystalline silicon ingot or purifying furnace crucible, belong to photovoltaic solar field.It comprises crucible body, described crucible body comprises crucible side plate and crucible bottom plate, height in the middle part of described crucible bottom plate is lower than the height of end, and the thickness of in the middle part of described crucible bottom plate and end is equal, and described crucible bottom plate internal surface is evenly provided with some salient points.Salient point and crucible bottom plate one-body molded.The utility model on the basis of existing technology, crucible bottom plate is designed to the height of height lower than end at middle part, and the thickness of in the middle part of crucible bottom plate and end is equal, crucible bottom plate internal surface is evenly provided with some salient points, ensure in the middle of crucible bottom and the temperature head at edge by the heating surface area increased in the middle part of crucible bottom plate, thus ensure follow-up ingot quality, can also dendrite inhibition growth.
Description
Technical field
The utility model relates to photovoltaic solar field, particularly relates to a kind of polycrystalline silicon ingot or purifying furnace crucible.
Background technology
The material of the silicon material in current crucible is that excess silicon material height is measured in the mid-way by glass stick being stretched into crucible bottom substantially, thus the silicon material accurately controlling crucible bottom and have one deck simple covers, and ensures follow-up ingot quality.
In existing crucible design, the bottom of most crucible internal walls is all on same horizontal plane substantially, the problem that such existence is very large, in polycrystalline cast ingot, ingot furnace major part arranges top heater and side heater respectively at its top and sidepiece, make the mid-way temperature of the bottom of the crucible internal walls being placed in ingot furnace lower, and the marginal position temperature of the bottom of crucible internal walls is higher, the residue degree of the material of the crucible of bottom all on same horizontal plane is determined by the thermal field of crucible, this just makes when the silicon material in the mid-way of crucible bottom remains in addition, the silicon material of the marginal position of crucible bottom has been changed, and then accurately cannot control the silicon material that crucible bottom has one deck simple and cover, ensure follow-up ingot quality.Further, polycrystalline cast ingot nucleation stage, also laterally can grow up in crucible bottom optional position nucleation, grain size is uncontrolled, and be unfavorable for that dendrite inhibition grows, and grain size differs, homogeneity is bad.
Utility model content
Problem to be solved in the utility model is: provide a kind of polycrystalline silicon ingot or purifying furnace crucible, it can not only ensure follow-up ingot quality, can also dendrite inhibition growth.
The utility model technical solution problem adopts following technical scheme:
A kind of polycrystalline silicon ingot or purifying furnace crucible, comprise crucible body, described crucible body comprises crucible side plate and crucible bottom plate, height in the middle part of described crucible bottom plate is lower than the height of end, and the thickness of in the middle part of described crucible bottom plate and end is equal, and described crucible bottom plate internal surface is evenly provided with some salient points.
Preferably, described salient point and crucible bottom plate one-body molded.
The beneficial effects of the utility model are: the utility model on the basis of existing technology, crucible bottom plate is designed to the height of height lower than end at middle part, and the thickness of in the middle part of crucible bottom plate and end is equal, crucible bottom plate internal surface is evenly provided with some salient points, ensure in the middle of crucible bottom and the temperature head at edge by the heating surface area increased in the middle part of crucible bottom plate, thus ensure follow-up ingot quality, can also dendrite inhibition growth.
Accompanying drawing explanation
Fig. 1 is the utility model schematic cross-section.
Number in the figure: 1 is crucible body, 11 is crucible side plate, and 12 is crucible bottom plate, and 13 is salient point.
Embodiment
The technique means realized to make the utility model, creation characteristic, reaching object and effect is easy to understand, below in conjunction with concrete diagram, setting forth the utility model further.
As shown in Figure 1, a kind of polycrystalline silicon ingot or purifying furnace crucible, comprise crucible body 1, described crucible body 1 comprises crucible side plate 11 and crucible bottom plate 12, height in the middle part of described crucible bottom plate 12 is lower than the height of end, and the thickness of in the middle part of described crucible bottom plate 12 and end is equal, and described crucible bottom plate 12 internal surface is evenly provided with some salient points 13.
During specific design, described salient point 13 is one-body molded with crucible bottom plate 12.
The utility model proposes a kind of polycrystalline silicon ingot or purifying furnace crucible.Crucible bottom plate 12 is designed to the height of height lower than end at middle part by the utility model, and the thickness of in the middle part of crucible bottom plate 12 and end is equal, crucible bottom plate 12 internal surface is evenly provided with some salient points 13, the temperature head with end in the middle part of crucible bottom plate 12 is reduced by the heating surface area increased in the middle part of crucible bottom plate 12, make the material similar rate of crucible bottom plate 12 silicon material, even identical, crucible bottom plate 12 of the present utility model is uneven simultaneously, and crucible bottom plate 12 internal surface is evenly provided with some salient points 13, these 2 improvement all contribute to dendrite inhibition growth.
The above; be only the utility model preferably embodiment; but protection domain of the present utility model is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; be equal to according to the technical solution of the utility model and utility model design thereof and replace or change, all should be encompassed within protection domain of the present utility model.
Claims (2)
1. a polycrystalline silicon ingot or purifying furnace crucible, it is characterized in that, comprise crucible body, described crucible body comprises crucible side plate and crucible bottom plate, height in the middle part of described crucible bottom plate is lower than the height of end, and the thickness of in the middle part of described crucible bottom plate and end is equal, and described crucible bottom plate internal surface is evenly provided with some salient points.
2. a kind of polycrystalline silicon ingot or purifying furnace crucible according to claim 1, is characterized in that, described salient point and crucible bottom plate one-body molded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520354317.5U CN204625835U (en) | 2015-05-28 | 2015-05-28 | A kind of polycrystalline silicon ingot or purifying furnace crucible |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520354317.5U CN204625835U (en) | 2015-05-28 | 2015-05-28 | A kind of polycrystalline silicon ingot or purifying furnace crucible |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204625835U true CN204625835U (en) | 2015-09-09 |
Family
ID=54044881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520354317.5U Expired - Fee Related CN204625835U (en) | 2015-05-28 | 2015-05-28 | A kind of polycrystalline silicon ingot or purifying furnace crucible |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204625835U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105937851A (en) * | 2016-06-27 | 2016-09-14 | 江阴市正中科教器材有限公司 | Electric heating crucible |
| CN105953582A (en) * | 2016-06-27 | 2016-09-21 | 江阴市正中科教器材有限公司 | Non-stirring crucible |
-
2015
- 2015-05-28 CN CN201520354317.5U patent/CN204625835U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105937851A (en) * | 2016-06-27 | 2016-09-14 | 江阴市正中科教器材有限公司 | Electric heating crucible |
| CN105953582A (en) * | 2016-06-27 | 2016-09-21 | 江阴市正中科教器材有限公司 | Non-stirring crucible |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150909 Termination date: 20170528 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |