CN204529302U - Self-supporting three-dimension device - Google Patents
Self-supporting three-dimension device Download PDFInfo
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- CN204529302U CN204529302U CN201520005423.2U CN201520005423U CN204529302U CN 204529302 U CN204529302 U CN 204529302U CN 201520005423 U CN201520005423 U CN 201520005423U CN 204529302 U CN204529302 U CN 204529302U
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Abstract
The utility model discloses a kind of self-supporting three-dimension device, comprising: the substrate with window; The dielectric film of self-supporting, this dielectric film to be formed in substrate and to cover window, and this dielectric film has: extend one the main part extended in plane; With at least one suspending part cut out from main part, suspending part and main part become local to be connected and deviate from the extension plane of main part; The device cell that each suspending part is formed, this device cell has predetermined pattern.The utility model has gone out to have three-dimensional structure and the micro-nano device of mutually insulated in the dielectric film preparation of self-supporting, avoids the problem that there is short circuit when micro-nano device adds electric field excitation outside between unit.In addition, self-supporting three-dimension device of the present utility model can be produced in batches, thus obtains the self-supporting three-dimension device array with identical or different micro-nano functional structure.
Description
Technical field
The utility model relates to three-dimensional micro-nano device technical field, particularly relates to a kind of self-supporting three-dimension device.
Background technology
Along with the development of microelectronic technique, device is also progressively increasing towards the difficulty of miniaturization, and the structure of three-dimension device becomes an important channel of improving device integration density undoubtedly.Therefore, the manufacture method finding the controlled space micro nano structure of a kind of three-dimensional has caused the concern of more and more people.Someone utilizes ion beam irradiation to control film deformation to prepare the technique of three-dimensional structure at present, it is by utilizing focused-ion-beam lithography to go out cantilever design on the silverskin of self-supporting, and then make silver-colored cantilever generation deformation with ion beam irradiation, obtaining can at the three-dimensional metal structure of space free orientation.This three-dimensional metal structure can be used for the design of photoelectric device, as based on detector, the wide broadband radiation modulator from primitive such as surface, and D S QUID magnetic detector etc.
But the micro-nano device of three-dimensional structure that what above-mentioned preparation technology obtained have is all using large-area metal film as carrier, and all three-dimensional micro-nano devices are all connected with base metal film, these micro-nano devices with three-dimensional structure are caused to require three-dimensional micro-nano device mutually insulated at some or require that some part of each micro-nano device cannot be able to not be applied by the field of metal short circuit.
Utility model content
The purpose of this utility model to provide a kind of self-supporting three-dimension device, on the dielectric film that this self-supporting three-dimension device is formed in self-supporting and with its insulation.
To achieve these goals, according to an aspect of the present utility model, provide a kind of self-supporting three-dimension device, comprising: the substrate with window; The dielectric film of self-supporting, this dielectric film to be formed in substrate and to cover window, and this dielectric film has: extend one the main part extended in plane; With at least one suspending part cut out from main part, suspending part and main part become local to be connected and deviate from the extension plane of main part; The device cell that each suspending part is formed, this device cell has predetermined pattern.
Further, between device cell and the suspending part of dielectric film, be formed with the metal level with device cell with same shape and size.
Further, the Material selec-tion one-tenth of metal level can the flexural deformation when ion irradiation.
Further, the material forming metal level is chromium, gold or copper.
Further, the thickness of metal level is 3 ~ 10nm.
Further, suspending part makes it bend to the direction away from dielectric film by ion beam irradiation to obtain; Preferably, suspending part is rectangle.
Further, device cell is formed directly on the suspending part of dielectric film.
Further, suspending part is connected along continuous print straight line with main part.
Further, the predetermined pattern of device cell is " U " shape or triangular structure.
Further, suspending part is overlapping with device cell.
According to another aspect of the present utility model, provide a kind of method preparing self-supporting three-dimension device, comprising: step S1: the dielectric film providing a self-supporting, this dielectric film has the upper surface of substantially flat; Step S2: form conductive layer and at least one has the device cell of predetermined pattern, to form a lamination layer structure on the upper surface of dielectric film; Step S3: cut lamination layer structure, becomes locally-attached suspending part to obtain at least one with lamination layer structure; Wherein, each suspending part has a corresponding device cell; Step S4: adopt ion beam irradiation suspending part, to make conductive layer deform, thus drives suspending part bending to the direction away from dielectric film with the local connecting portion of lamination layer structure around it; Step S5: remove conductive layer at least partially, obtains the self-supporting three-dimension device insulated.
Further, in step s 2, the upper surface of dielectric film forms multiple device cell; Further, in step s 5, partial electroconductive layer is removed, insulated from each other to make between any two device cells.
Further, in step s 5, conductive layer at most only retains the part corresponding with the predetermined pattern of device cell.
Further, in step s 5, conductive layer is entirely removed.
Further, in step s 2: on the upper surface of dielectric film, form conductive layer, then form device cell on the electrically conductive; Or, the upper surface of dielectric film forms device cell, then on the upper surface of dielectric film, forms conductive layer, be between dielectric film and conductive layer to make device cell.
Further, suspending part is connected along continuous print straight line with lamination layer structure.
Further, conductive layer is metal material; Preferably, the material of formation conductive layer is selected from one or more in chromium, gold and copper; Alternatively, the thickness of conductive layer is 3 ~ 10nm.
Further, the material of formation device cell is selected from one or more in gold, silver, copper, aluminium, nickel, titanium, chromium, ITO, zinc oxide, titanium oxide and magnesium fluoride; Alternatively, dielectric film is silicon nitride.
Further, the method preparing self-supporting three-dimension device also comprises: the substrate with window; Dielectric film to be formed in substrate and to cover window.
Application the technical solution of the utility model, inventor creatively adopts the micro-nano dielectric film of self-supporting as substrate, evaporation conductive metal layer thereon, and in conjunction with micro-nano metallic pattern preparation technology, conductive metal layer forms one or more device cell with predetermined pattern.Obtaining suspending part by carrying out cutting to this device cell, adopting electron beam irradiation suspending part to induce it to occur bending and deformation around the junction, local with dielectric film, making suspending part on dielectric film, form the micro-nano device with three-dimensional structure.Remove conductive metal layer, expose insulating medium layer, thus gone out there is three-dimensional structure and the micro-nano device of mutually insulated in the dielectric film preparation of self-supporting first.
The technical solution of the utility model is adopted to have following effect:
1) adopt the dielectric film of self-supporting as substrate, after coated with conductive metal level, carry out the micro-nano technology of dielectric film in its surface.If not conductive coating, the electric charge inciding electronics on dielectric film or ion can not be conducted in time, and the electric charge accumulated gradually can make Subsequent electronic or ion offset, and accurately can not navigate to desired location, thus reduces machining accuracy.Therefore, the problem that the figure deformation can effectively avoiding partial charge to accumulate causing by conductive coating and machining accuracy reduce, and do not affect the insulation characterisitic between single micro-nano device or multiple micro-nano device with three-dimensional structure after removing conductive metal layer.
2) the utility model adopts ion beam irradiation, make the suspending part in dielectric thin film planar that controlled three-dimensional deformation occur, thus the 3 D tropism achieving carried metallic pattern is controlled.Not only technique is flexible for preparation method provided by the utility model, controllability is good, cost is low and can large area preparation, and can design the structure of predetermined pattern on three-dimensional micro-nano device, pattern, size and cycle in preparation process, thus prepare that material category is more, function is unique and baroque self-supporting three-dimension device, for the application of micro-nano device provides new technology.
3) method of the present utility model can be prepared and have three-dimensional structure and the self-supporting three-dimension device of mutually insulated, avoids the problem that there is short circuit when it adds electric field excitation outside between unit.In addition, method provided by the utility model can be produced in batches, thus obtains the three-dimensional structure device array with identical or different micro-nano functional structure.
According to hereafter by reference to the accompanying drawings to the detailed description of the utility model specific embodiment, those skilled in the art will understand above-mentioned and other objects, advantage and feature of the present utility model more.
Accompanying drawing explanation
Hereinafter describe specific embodiments more of the present utility model with reference to the accompanying drawings by way of example, and not by way of limitation in detail.Reference numeral identical in accompanying drawing denotes same or similar parts or part.It should be appreciated by those skilled in the art that these accompanying drawings may not be drawn in proportion.In accompanying drawing:
Fig. 1 is the process chart preparing the self-supporting device of mutually insulated in the utility model embodiment; And
Fig. 2 is the structural representation with the micro-nano device of " U " shape predetermined pattern prepared according to the technological process in Fig. 1.
Detailed description of the invention
As shown in Figure 1, the utility model provides a kind of method preparing self-supporting three-dimension device, comprising: step S1: provide a self-supporting dielectric film 10 with the upper surface 11 of substantially flat.The step of Fig. 1 is 1. for substrate 50 being coated with the structural representation of dielectric thin film layer 10.Dielectric film 10 is formed in be had in the substrate 50 of window, and covers the window of substrate 50.Wherein, dielectric film 10 can be silicon nitride material, as commercially available silicon nitride window, also can be other dielectric film utilizing micro-nano technology technique to prepare.
Step S2: form conductive layer 20 and at least one has the device cell 30 of predetermined pattern, to form a lamination layer structure on the upper surface 11 of dielectric film 10.The step of Fig. 1 2. for being formed with the structural representation of the device cell 30 of conductive layer 20 and " U " type predetermined pattern on dielectric thin film layer 10.In the process forming lamination layer structure, as shown in Figure 1, first can form conductive layer 20 on the upper surface 11 of dielectric film 10, then on conductive layer 20, form device cell 30.In other embodiments, also first device cell 30 can be formed on the upper surface 11 of dielectric film 10, and then conductive layer 20 is formed on the upper surface 11 of dielectric film 10, to make device cell 30 be between dielectric film 10 and conductive layer 20, now the adhesive force of device cell 30 on dielectric film is larger.
Conductive layer 20 can be metal material, also can be that other can diastrophic material.Preferably, metal material can be selected from chromium, gold and copper one or more.In a preferred embodiment of the present utility model, the thickness of conductive layer 20 is 3 ~ 10nm.If the thickness of conductive layer is too large, deformation of thin membrane can be caused comparatively greatly due to the stress difference of conductive layer and dielectric layer.On the contrary, if the thickness of conductive layer is too little, then can, the conductive effect that do not had discontinuous due to conductive layer and cause electric charge accumulation effect obvious, the problem that showing methods precision reduces.Formed the material of device cell 30 can be selected from gold, silver, copper, aluminium, nickel, titanium, chromium, ITO, zinc oxide, titanium oxide and magnesium fluoride one or more.Above-mentioned material can stable in the airly exist, and can not affect the performance of final three-dimensional micro-nano device.In order to ensure the cleannes of conductive layer 20, when adopting metal material as conductive layer 20, preferably by the technique such as wet etching or dry etching, metal surface is processed.
The predetermined pattern be formed on device cell 30 is not limited to " U " shape structure, the shape needed for also can selecting according to the final demand making three-dimension device.As predetermined pattern can also be triangle, circle, square or etc. other shape and structure.Owing to needing to remove conductive layer 20 in subsequent process steps, therefore, the material forming device cell 30 is preferably not identical with the material forming conductive layer 20.
Step S3: cut the lamination layer structure obtained in step S2, becomes locally-attached suspending part 40 to obtain at least one with lamination layer structure.Each suspending part 40 has a corresponding device cell 30.The step of Fig. 1 3. in after lamination layer structure is cut, obtain one becomes locally-attached suspending part 40 structural representation with lamination layer structure.This suspending part 40 also can be called micro-nano cantilever figure.As can be seen from Figure 1, suspending part 40 is connected along continuous print straight line with lamination layer structure.Certainly, in other embodiments, suspending part 40 and lamination layer structure also can be that multiple line segment is connected, the otch stayed after having cutting between two adjacent line segments.General employing ion beam cuts lamination layer structure, dielectric film is cut, thus obtains the permeable structures of non-close curve, be i.e. suspending part 40.The kind of ion beam can be FIB or broad beam ion bundle.The energy of ion beam intermediate ion is greater than 500 electron-volts.In other embodiments, uv-exposure/electron beam exposure technique also can be adopted to obtain non-close curvilinear figure, and utilize etching technics to obtain non-close curve permeable structures.
Step S4: adopt ion beam irradiation suspending part 40, deform to make conductive layer 20, thus drive suspending part 40 around its local connecting portion 41 with lamination layer structure to the direction flexural deformation away from dielectric film 10, thus the three-dimensional structure of formation self-supporting.4. the step of Fig. 1 is the structural representation that after adopting ion beam irradiation, suspending part 40 occurs bending and deformation.Wherein, the mode of ion beam irradiation comprises the overall irradiation to all graphic structures in suspending part 40, or carries out selective local irradiation to some region.The degree of crook of suspending part 40 on different ion beam irradiation parameters and then control dielectric film 10 can be adopted, and the angular range of the extended surface at the suspending part 40 after bending and dielectric film 10 place is controlled between 0 ~ 180 °.
Step S5: remove conductive layer 20 at least partially, obtain the micro-nano device of the insulation with self-supporting three-dimensional structure.Step is 5. for exposing the structural representation of dielectric film 10 after removal conductive layer 20.Wherein, wet corrosion technique can be adopted (as removed chromium with ammonium ceric nitrate/acetic acid solution, to use KI/I
2solution removal gold) or dry etch process (as reactive ion etching, inductively coupled plasma reactive ion etching etc.) at least remove conductive layer 20 on the surface 11 of dielectric film 10.
In the embodiment shown in fig. 1, conductive layer 20 is entirely removed.In other unshowned embodiment, conductive layer 20 only retains the part corresponding with the predetermined pattern of device cell 30 at most, and the part namely only covered at scheduled pattern remains conductive layer 20.
Fig. 2 is that dielectric film 10 only forms the schematic diagram that has the micro-nano device of self-supporting three-dimensional structure on the surface.In other unshowned embodiment of the present utility model, in step s 2, multiple device cell 30 can be formed on the upper surface 11 of dielectric film 10, namely can be formed the micro-nano device array of three-dimensional structure by multiple device cell 30 on the surface of dielectric film 10.Further, in step s 5, make between any two device cells 30 insulated from each other after removing partial electroconductive layer 20.
According to another aspect of the present utility model, additionally provide a kind of self-supporting three-dimension device adopting any one method above-mentioned to prepare.In an embodiment of the present utility model, as shown in Figure 2, self-supporting three-dimension device comprises the substrate 50 with window and is formed on this base substrate 50 and cover the dielectric film 10 of the self-supporting of window.Wherein, the dielectric film 10 of self-supporting has the main part 12 extended in an extension plane and at least one suspending part 40 cut out from main part 12.Suspending part 40 is connected with main part 12 one-tenth local and deviates from the extension plane of main part 12.Each suspending part 40 is formed with device cell 30.Device cell 30 has predetermined pattern.Suspending part 40 makes it bend to the direction away from dielectric film 10 by ion beam irradiation to obtain.Suspending part 40 is connected along continuous print straight line with main part 12.Certainly, in other embodiments, suspending part 40 and main part 12 also can be that multiple line segment is connected, the otch stayed after having cutting between two adjacent line segments.In the embodiment shown in Figure 2, suspending part 40 is rectangle, and device cell 30 is " U " shape structure.In other embodiments, device cell 30 also can be triangular structure or other structure.
In a preferred embodiment of the present utility model, between device cell 30 and the suspending part 40 of dielectric film 10, be formed with the metal level 20 with device cell 30 with same shape and size, namely device cell 30 is formed on the metal level 20 of suspending part 40.In other embodiment of the present utility model, device cell 30 also can be formed directly on the suspending part 40 of dielectric film 10.Device cell 30 can be a part for suspending part 40, also can be overlapping with suspending part 40.The Material selec-tion of metal level 20 becomes can the flexural deformation when ion irradiation.As mentioned above, the material of metal level 20 can be chromium, gold or copper.The thickness of metal level 20 is 3 ~ 10nm.
The beneficial effects of the utility model are further illustrated below in conjunction with embodiment more specifically.
Embodiment 1
The self-supporting three-dimension device of the insulation of metallic pattern is had according to the technique preparation table mask shown in Fig. 1.
Step 1: the upper deposit thickness of silicon nitride window (being provided by Shanghai NTI Co., Ltd.) being 50nm at thickness is that the crome metal of 3nm is as conductive layer.
Step 2: spin coating electron beam resist PMMA on the conductive layer that step 1 obtains, rotating speed is 4000r/ minute, and on the hot plate then spin coating being had the silicon nitride window of photoresist to be placed in 180 DEG C, baking makes solvent volatilize in 1 minute.
Step 3: utilize electron beam exposure technique in step 2) exposure on the sample that obtains, development, to obtain the length of side be 1.7 μm and live width is the photoetching offset plate figure of " U " shape structure of 0.5 μm.
Step 4: utilize electron beam evaporation process in step 3) evaporation thickness is the layer gold of 50nm on the sample that obtains.
Step 5: sample step 4 obtained is placed in acetone and soaks 1 hour, dissolves photoresist PMMA.By dissolving photoresist PMMA, the golden film be positioned on its surface being come off from conductive layer, blowing away the golden film of sample surfaces with suction pipe gently, pull sample out and dry up with nitrogen, obtaining the metallic pattern on silicon nitride window, i.e. device cell.
Step 6: cut out around the metallic pattern utilizing FIB to obtain in step 5 length of side be 3 μm cantilever design (three limits of cantilever design are separated with silicon nitride film parent, only have and are connected, as shown in fig. 1), i.e. suspending part.FIB adopts Ga
+, ion beam current size is 30pA.
Step 7: line sweep is carried out in the cantilever design utilizing FIB to obtain in step 6 and parent local-connection side, makes cantilever design with scan line for axially to bend.Ion beam current size is 10pA, and sweep time is 0.5 second.
Step 8: sample step 7 obtained is dipped into (wherein, Ce (NH in the mixed liquor of ammonium ceric nitrate and acetic acid
4)
2(NO
3)
6: CH
3cOOH:H
2o=25g:4.4ml:125ml), through soaking to remove conductive layer crome metal, obtain the self-supporting three-dimension device that surface has the insulation of metallic pattern.
Embodiment 2
Step 1: the upper spin coating one deck ultraviolet photoresist S1813 of self-supporting silicon oxide film (being provided by Shanghai NTI Co., Ltd.) at thickness being 100nm, rotating speed during spin coating is 4000r/ minute, the self-supporting silicon oxide film with ultraviolet photoresist S1813 is placed in baking on 115 DEG C of hot plates and solvent is volatilized in 2 minutes.
Step 2: exposure on the sample utilizing uv-exposure technique to obtain in step 1, development, obtain the isosceles right triangle photoetching offset plate figure that hypotenuse length is 4 μm.
Step 3: the silverskin that on the sample utilizing electron beam evaporation process to obtain in step 2, evaporation thickness is 50nm.
Step 4: sample step 3 obtained is placed in acetone and soaks 1 hour, blows away the silverskin of sample surfaces gently, pulls sample out and dry up with nitrogen, obtain the metallic pattern on self-supporting silicon oxide film with suction pipe.
Step 5: deposit thickness is the metal conducting layer chromium of 10nm on the sample that step 4 obtains.
Step 6: the cantilever design (three limits of cantilever design are separated with silicon oxide film parent, and length is 5 μm being connected) cutting out the length of side 5 μm × 3 μm around the metallic pattern utilizing FIB to obtain in step 5, i.e. suspending part.Ionic species is Ga
+, ion beam current size is 30pA.
Step 7: line sweep is carried out in the cantilever design utilizing FIB to obtain in step 6 and the side of parent local-connection, and cantilever design is axially flexural deformation with scan line, thus forms the three-dimensional structure of self-supporting.Ion beam current size is 30pA, and sweep time is 1.0 seconds.
Step 8: sample step 7 obtained is dipped into (wherein, Ce (NH in the mixed liquor of ammonium ceric nitrate and acetic acid
4)
2(NO
3)
6: CH
3cOOH:H
2o=25g:4.4ml:125ml), after soaking, remove conductive layer crome metal, obtain the self-supporting three-dimension device that surface has the insulation of metallic pattern.
As can be seen from embodiment 1-2, inventor creatively adopts the dielectric film of self-supporting as substrate, the elder generation in embodiment 1 is adopted to form conductive layer on dielectric film, then the mode of device cell is formed on the electrically conductive, or adopt the mode of embodiment 2 first on dielectric film, to form device cell, then on dielectric film, conductive layer is formed, device cell is made to be in mode between dielectric film and conductive layer, all prepare on the dielectric film of self-supporting and there is three-dimensional structure and the micro-nano device of mutually insulated.As can be seen from embodiment 1-2, not only technique is flexible for preparation method of the present utility model, controllability is good, cost is low and can large area preparation, and can also design the structure of predetermined pattern on micro-nano device, pattern, size and cycle in preparation process, thus obtain that material category is many, function is unique and baroque self-supporting three-dimension device, for the application of micro-nano device provides new technology.
So far, those skilled in the art will recognize that, although multiple exemplary embodiment of the present utility model is illustrate and described herein detailed, but, when not departing from the utility model spirit and scope, still can directly determine or derive other modification many or amendment of meeting the utility model principle according to content disclosed in the utility model.Therefore, scope of the present utility model should be understood and regard as and cover all these other modification or amendments.
Claims (10)
1. a self-supporting three-dimension device, is characterized in that, comprising:
There is the substrate (50) of window;
The dielectric film (10) of self-supporting, described dielectric film (10) is formed in described substrate (50) and goes up and cover described window, and has:
The main part (12) extended in plane is extended one; With
From at least one suspending part (40) that described main part (12) cuts out, described suspending part (40) and described main part (12) become local to be connected and deviate from the described extension plane of described main part (12);
Upper device cell (30) formed of suspending part (40) described in each, described device cell (30) has predetermined pattern.
2. self-supporting three-dimension device according to claim 1, it is characterized in that, between described device cell (30) and described suspending part (40), be formed with the metal level (20) with described device cell (30) with same shape and size.
3. self-supporting three-dimension device according to claim 2, is characterized in that, the Material selec-tion of described metal level (20) becomes can the flexural deformation when ion irradiation.
4. self-supporting three-dimension device according to claim 3, is characterized in that, the material forming described metal level (20) is chromium, gold or copper.
5. self-supporting three-dimension device according to claim 2, is characterized in that, the thickness of described metal level (20) is 3 ~ 10nm.
6. self-supporting three-dimension device according to claim 1, is characterized in that, described suspending part (40) makes it bend to the direction away from described dielectric film (10) by ion beam irradiation to obtain; Described suspending part (40) is rectangle.
7. self-supporting three-dimension device according to claim 1, is characterized in that, described device cell (30) is formed directly on the described suspending part (40) of described dielectric film (10).
8. self-supporting three-dimension device according to claim 1, is characterized in that, described suspending part (40) is connected along continuous print straight line with described main part (12).
9. self-supporting three-dimension device according to claim 1, is characterized in that, the described predetermined pattern of described device cell (30) is " U " shape or triangular structure.
10. self-supporting three-dimension device according to claim 1, is characterized in that, described suspending part (40) is overlapping with described device cell (30).
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| CN201520005423.2U CN204529302U (en) | 2015-01-05 | 2015-01-05 | Self-supporting three-dimension device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104555890A (en) * | 2015-01-05 | 2015-04-29 | 中国科学院物理研究所 | Self-supporting three-dimensional device |
| CN106785294A (en) * | 2017-01-13 | 2017-05-31 | 中国科学院物理研究所 | A kind of three-dimensional dipole ring magnet device and preparation method |
| CN110095950A (en) * | 2019-05-08 | 2019-08-06 | 北京理工大学 | A method of preparing differently curved degree nano beam |
| CN111606299A (en) * | 2020-05-21 | 2020-09-01 | 深圳技术大学 | Thin film for controlling shape of liquid drop and preparation method and application thereof |
| CN113023667A (en) * | 2021-03-04 | 2021-06-25 | 中国科学院物理研究所 | Three-dimensional micro-nano bending structure and method for preparing same by using electron beam |
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2015
- 2015-01-05 CN CN201520005423.2U patent/CN204529302U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104555890A (en) * | 2015-01-05 | 2015-04-29 | 中国科学院物理研究所 | Self-supporting three-dimensional device |
| CN106785294A (en) * | 2017-01-13 | 2017-05-31 | 中国科学院物理研究所 | A kind of three-dimensional dipole ring magnet device and preparation method |
| CN110095950A (en) * | 2019-05-08 | 2019-08-06 | 北京理工大学 | A method of preparing differently curved degree nano beam |
| CN111606299A (en) * | 2020-05-21 | 2020-09-01 | 深圳技术大学 | Thin film for controlling shape of liquid drop and preparation method and application thereof |
| CN113023667A (en) * | 2021-03-04 | 2021-06-25 | 中国科学院物理研究所 | Three-dimensional micro-nano bending structure and method for preparing same by using electron beam |
| CN113023667B (en) * | 2021-03-04 | 2023-11-10 | 中国科学院物理研究所 | Three-dimensional micro-nano bending structure and method for preparing same by utilizing electron beam |
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