CN113023667B - Three-dimensional micro-nano bending structure and method for preparing same by utilizing electron beam - Google Patents
Three-dimensional micro-nano bending structure and method for preparing same by utilizing electron beam Download PDFInfo
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- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/0143—Focussed beam, i.e. laser, ion or e-beam
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Abstract
The application relates to a three-dimensional micro-nano bending structure and a method for preparing the same by utilizing electron beams. According to an exemplary embodiment, a method of preparing a three-dimensional bent structure may include: preparing a laminate structure comprising at least a first layer and a second layer on the first layer, the laminate structure having a body portion supported on a substrate and at least one overhanging pattern portion extending from the body portion; the overhanging pattern portion is irradiated with an electron beam to bend the overhanging pattern portion, thereby obtaining a three-dimensional bending structure.
Description
Technical Field
The present application relates generally to the field of micromachining, and more particularly, to a three-dimensional micro-nano bending structure and a method of preparing the same using an electron beam.
Background
With the continuous development of microelectronic technology, three-dimensional structures are increasingly used. Compared with a two-dimensional micro-nano structure, the three-dimensional structure has the advantages of higher controllable degree of freedom, smaller volume and the like. For example, in the design of stealth metamaterials as well as negative index metamaterials, three-dimensional structures are required for fabrication. Three-dimensional metamaterials also play an important role in realizing superlenses or light-amplifying devices by plasmon focusing. In addition, the characteristic size of the plasmon structure is in direct proportion to the wavelength of the light wave, and the plasmon structure has the characteristic of sub-wavelength, so that the progress in the preparation of the three-dimensional micro-nano structure can bring great promotion effect to the application of the three-dimensional metamaterial. In three-dimensional metamaterials, optical devices with bent or coiled structures have more prominent light conditioning capabilities than traditional three-dimensional structures; in addition, in the design of the three-dimensional electric device, the three-dimensional micro-nano bending structure can improve the performance and the integration level of the electric device, and plays an important role in the design of the device with high integration level and high efficiency. Therefore, how to obtain a three-dimensional micro-nano bending structure is an important problem in the current device manufacturing.
Initially, processing of three-dimensional structures mainly depends on techniques such as laser direct writing and 3D printing, and although these techniques can process complex three-dimensional structures, processing materials are greatly limited, and generally only suitable for processing polymer three-dimensional structures, and processing efficiency is low. In order to prepare three-dimensional structures more flexibly, so-called three-dimensional paper folding processing technology is proposed, which has the characteristics of compatibility with plane processing technology, flexible preparation and the like. The processing thought of the three-dimensional paper folding method is mainly realized by three-dimensional folding or curling of a two-dimensional graphical structure. For example, a two-dimensional pattern may be produced on a stretched flexible substrate, the pattern being bonded to the substrate by several connection points. When the substrate is recovered from the stretched state, the two-dimensional pattern is compressed, thereby generating buckling, thereby obtaining a complex three-dimensional structure. However, this method has problems in that it is difficult to control the bending shape, bending exceeding 180 ° cannot be generated, and the bending structure is restored to some extent after the substrate is removed.
Accordingly, there remains a need for an improved method that can conveniently and flexibly prepare three-dimensional micro-nano folded structures of desired shapes.
Disclosure of Invention
The present application has been made in view of the above and other technical problems in the art.
According to one aspect of the present application, there is provided a method of preparing a three-dimensional bent structure using an electron beam, comprising: preparing a laminate structure comprising at least a first layer and a second layer on the first layer, the laminate structure having a body portion supported on a substrate and at least one overhanging pattern portion extending from the body portion; the overhanging pattern portion is irradiated with an electron beam to bend the overhanging pattern portion, thereby obtaining a three-dimensional bending structure.
In some embodiments, the first layer is formed of a dielectric material and the second layer is formed of a metallic material.
In some embodiments, preparing the laminate structure comprises: forming the first layer on the substrate; etching the first layer to form a body portion and an overhanging pattern portion extending from the body portion; forming a sacrificial layer pattern on the substrate, the sacrificial layer pattern exposing a body portion and an overhanging pattern portion of the first layer; depositing a second layer on the sacrificial layer pattern and the body and overhanging pattern portions of the first layer; removing the sacrificial layer pattern and a portion of the second layer deposited on the sacrificial layer pattern to obtain the laminated structure; and removing a portion of the substrate under an overhanging pattern portion of the laminated structure such that the body portion is supported on the substrate while the overhanging pattern portion overhangs from the body portion.
In some embodiments, preparing the laminate structure comprises: forming a first layer on the substrate and a second layer on the first layer; etching the first layer and the second layer to form a stacked structure including a body portion and an overhanging pattern portion extending from the body portion; and removing a portion of the substrate under an overhanging pattern portion of the laminated structure such that the body portion is supported on the substrate while the overhanging pattern portion overhangs from the body portion.
In some embodiments, preparing the laminate structure comprises: transferring a first layer onto the substrate, the substrate having at least one open area, the first layer covering the open area of the substrate; etching the first layer to form a body portion supported by the substrate and at least one overhanging pattern portion extending from the body portion into an open region of the substrate; and depositing the second layer on the first layer.
In some embodiments, preparing the laminate structure comprises: transferring a multilayer film comprising at least a first layer and a second layer on the first layer onto the substrate, the substrate having at least one open area, the multilayer film covering the open area of the substrate; and etching the multilayer film to form a body portion supported by the substrate and at least one overhanging pattern portion extending from the body portion into an opening region of the substrate.
In some embodiments, irradiating the overhanging pattern portion with an electron beam comprises: the overhanging pattern portion of the second layer is globally irradiated or irradiated with an electron beam.
In some embodiments, globally or locally irradiating the overhanging pattern portion of the second layer with an electron beam comprises: the whole or partial area of the overhanging pattern portion of the second layer is scanned point by point with an electron beam.
According to another aspect of the present application, there is provided a three-dimensional folded structure prepared by the above method, having a laminate structure including at least a first layer and a second layer on the first layer, the laminate structure including a main body portion and at least one three-dimensional folded portion extending from the main body portion.
In some embodiments, the thickness of each of the first and second layers is in the range of 1nm to 100 μm, preferably in the range of 1nm to 1 μm, more preferably in the range of 1nm to 100 nm.
The foregoing and other features and advantages of the application will be apparent from the following description of exemplary embodiments, as illustrated in the accompanying drawings.
Drawings
Fig. 1 is a flowchart of a method of fabricating a three-dimensional micro-nano bent structure according to an exemplary embodiment of the application.
Fig. 2A-2D are schematic illustrations of steps for preparing a laminate structure according to an exemplary embodiment of the present application.
Fig. 3A-3C are schematic views of steps for preparing a laminate structure according to another exemplary embodiment of the present application.
Fig. 4A-4D are schematic views of steps for preparing a laminate structure according to another exemplary embodiment of the present application.
Fig. 5A-5C are schematic views of steps for preparing a laminate structure according to another exemplary embodiment of the present application.
Fig. 6 through 8 are schematic views illustrating steps of irradiating an overhanging pattern portion with an electron beam according to some exemplary embodiments of the present application.
Fig. 9 and 10 are photographs of three-dimensional micro-nano bent structures prepared according to some exemplary embodiments of the present application.
Detailed Description
Hereinafter, exemplary embodiments according to the present application will be described in detail with reference to the accompanying drawings. Note that the figures may not be drawn to scale. It will be apparent that the described embodiments are only some of the embodiments of the present application and not all of the embodiments of the present application, and that the present application is not limited by the example embodiments described herein.
Fig. 1 is a flowchart of a method 100 of preparing a three-dimensional micro-nano bent structure according to an exemplary embodiment of the application. Here, "bending" means various non-flat structures such as bent, curled, folded, wrinkled, etc. structures; "micro-nano" means that the dimensions of the structure, e.g. thickness, may be on the order of micrometers and nanometers, e.g. ranging from 1nm to 100 μm. Of course, it is to be understood that the principles of the present application are not limited to the bend shapes or sizes given herein as examples, but are also applicable to other various bend shapes and sizes.
Referring to fig. 1, a method 100 of fabricating a three-dimensional micro-nano folded structure may include a step S110 of fabricating a stacked structure including at least a first layer, which may be formed of a dielectric material, and a second layer, which may be formed of a metal material, on the first layer. The laminate structure has a body portion supported on a substrate and at least one overhanging pattern portion extending from the body portion, alternatively referred to as a cantilever structure. Next, some exemplary embodiments of step S110 of preparing a laminated structure will be described with reference to fig. 2A to 5C.
Fig. 2A-2D are schematic illustrations of steps for preparing a laminate structure according to an exemplary embodiment of the present application. Referring first to fig. 2A, a first layer 220 is formed on a substrate 210. The first layer 220 may be formed of a dielectric material such as silicon dioxide (SiO 2), aluminum oxide (Al 2O 3), silicon nitride (SiN), etc., and its thickness may be in the range of 1nm to 100 μm, preferably in the range of 1nm to 1 μm, and more preferably in the range of 1nm to 100 nm. For example, the thickness of the first layer 220 may be tens of nanometers. The first layer 220 may be formed on the substrate 210 by various methods. For example, a commercially purchased or other substrate deposited first layer 220 may be transferred to substrate 210 or first layer 220 may be deposited directly on substrate 210, examples of deposition methods include, but are not limited to, atomic layer deposition, thermal evaporation deposition, electron beam deposition, magnetron sputtering deposition, plasma pulse deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, and the like.
Referring to fig. 2B, a photoresist (also referred to as a photoresist) pattern 230 is formed on the first layer 220, and the first layer 220 is etched using the photoresist pattern 230 to form a body portion of the first layer 220 and an overhanging pattern portion extending from the body portion, which will be further described later. Examples of photoresists that may be used in this step include, but are not limited to, electron beam photoresists such as positive photoresist PMMA (polymethyl methacrylate) and negative photoresist HSQ, ultraviolet photoresists such as positive photoresist AZ and negative photoresist SU8, etc., or photoresists suitable for other exposure methods. The exposure method for forming the photoresist pattern 230 may be an optical exposure technique such as a violet exposure, a deep ultraviolet exposure, a laser direct writing exposure, or an electron exposure technique such as an electron beam exposure, depending on the type of photoresist selected, and may employ a single exposure or a plurality of overlay exposures. In some embodiments, the resulting photoresist pattern 230 has a desired pattern shape, i.e., has a body portion and one or more overhanging pattern portions extending from the body portion. It is understood that a plurality of photoresist patterns 230 may be formed on the first layer 220 in a repeated arrangement, which is not limited by the present application. In etching the first layer 220 using the photoresist pattern 230, a dry etching technique or a wet etching technique may be employed. For example, dry etching techniques may include ion milling etching, reactive ion etching, inductively coupled plasma reactive ion etching, and the like, and wet etching may be performed using chemical solutions such as hydrofluoric acid, potassium hydroxide, and the like. It will be appreciated that an appropriate etching method may be selected depending on the material forming the first layer 220. After the etching is completed, the photoresist layer 230 may be removed.
With continued reference to fig. 2C, a sacrificial layer pattern 240 is formed on the substrate 210, covering the substrate 210 but exposing the body portion and the overhanging pattern portion of the first layer 220. In some embodiments, the sacrificial layer pattern 240 may also be formed through an exposure and development process using a photoresist material, and the thickness of the sacrificial layer pattern 240 may be significantly greater than that of the first layer 220, for example, several hundred nanometers to several micrometers. Then, a second layer 250 may be deposited on the sacrificial layer pattern 240 and the exposed first layer 220. The second layer 250 may be formed of a metallic material, which may include a simple metal or an alloy, examples of which include, but are not limited to, gold, silver, aluminum, copper, iron, etc., and the second layer 250 may include a single layer or a composite multi-layer structure formed of different materials. The thickness of the second layer 250 may be in the range of 1nm to 100 μm, preferably in the range of 1nm to 1 μm, more preferably in the range of 1nm to 100 nm. For example, the thickness of the second layer 250 may be several tens of nanometers, and the thickness of the second layer 250 may be greater than, less than, or equal to the thickness of the first layer 220, as desired. In the step shown in fig. 2C, the second layer 250 may be formed through various deposition processes, examples of which include, but are not limited to, a physical deposition method such as magnetron sputtering, electron beam evaporation deposition, thermal evaporation, or a chemical deposition method such as a chemical vapor deposition method. Preferably, the second layer 250 may be formed through a directional deposition process so that it does not at least entirely cover the sidewalls of the sacrificial layer pattern 240. The thickness of the sacrificial layer pattern 240 may be significantly or substantially greater than the total thickness of the first layer 220 and the second layer 250 such that a portion of the sidewalls of the sacrificial layer pattern 240 are exposed. After the second layer 250 is deposited, the sacrificial layer pattern 240 and the portion of the second layer 250 located thereon may be removed, resulting in a laminated structure including the first layer 220 and the second layer 250, and the laminated structure including a desired shape composed of a body portion and an overhanging pattern portion extending from the body portion.
Referring now to fig. 2D, the portion of the substrate 210 underlying the overhanging pattern portion 206 of the stack 202 is removed such that the body portion 204 of the stack 202 is supported on the substrate and the overhanging pattern portion 206 of the stack 202 overhangs the body portion 204. The method of etching the substrate 210 may be selected according to the materials of the substrate 210, the first layer 220, and the second layer 250. For example, when the substrate 210 is a silicon substrate, the first layer 220 is an aluminum oxide layer, and the second layer 250 is a metal layer, sulfur hexafluoride and oxygen plasma may be used to etch the substrate 210. Of course, a suitable etchant may be selected to wet etch the substrate 210 depending on the materials of the layers. It will be appreciated that the step of etching the substrate 210 is an isotropic etch such that the portion of the substrate below the overhanging pattern portion 206 is etched away, while by providing the two-dimensional planar dimensions of the body portion 204 such that only the periphery of the substrate portion below it is etched away, the body portion 204 may still be supported on a portion of the substrate 210, as shown in fig. 2D. In some embodiments, the substrate portions removed in the steps shown in fig. 2D may be sacrificial layer material preformed in the substrate 210 so that these substrate portions may be more easily removed while the body portion 204 remains supported on the remaining substrate portions. As shown in fig. 2D, in the resulting laminate structure 202, one end of the overhanging pattern portion 206 is fixedly connected to the main body portion 204, while the other end is a free end overhanging, i.e., not fixedly connected to the substrate 210.
Fig. 3A-3C are schematic views of steps for preparing a laminate structure according to another exemplary embodiment of the present application. In fig. 3A-3C, the same structures as in fig. 2A-2D are denoted by the same reference numerals, and only briefly described below to avoid redundancy, some specific details may be found in the embodiments described above.
Referring to fig. 3A, a first layer 220 and a second layer 250 on the first layer 220 are formed on a substrate 210. Either or both of the first layer 220 and the second layer 250 may be commercially available or transferred to the substrate 210 after deposition on other substrates, or deposited directly on the substrate 210.
Referring to fig. 3B, a photoresist pattern 230 is formed on the multi-layered film structure of the first layer 220 and the second layer 250, and the first layer 220 and the second layer 250 are etched to form a stacked structure including a body portion and an overhanging pattern portion extending from the body portion. It is understood that the shape of the body portion and the overhanging pattern portion is defined by the photoresist pattern 230. After the etching is completed, the photoresist pattern 230 may be removed.
With continued reference to fig. 3C, the portion of the substrate 210 underlying the overhanging pattern portion 206 of the stack 202 is removed such that the body portion 204 of the stack 202 is supported on the substrate and the overhanging pattern portion 206 of the stack 202 overhangs the body portion 204. Thus, in the resulting laminate structure 202, one end of the overhanging pattern portion 206 is fixedly attached to the body portion 204, while the other end is a free end overhanging, i.e., not fixedly attached to the substrate 210.
By continuously forming the first layer 220 and the second layer 250 and etching the first layer 220 and the second layer 250 in the same step in the method of fig. 3A-3C, process steps are reduced compared to the method shown in fig. 2A-2D, making the process of forming the stacked structure 202 simpler. However, the method shown in fig. 2A-2D is preferred from the standpoint of forming the bent structure from the back, because it allows partial relief of the stress in the first layer 220 when the first layer 220 is etched separately and the second layer 250 is deposited on the first layer 220 after the etching is completed. Accordingly, when the bending structure is later formed by electron beam induced stress, the stacked structure 202 formed by the method shown in fig. 2A-2D can easily produce large angle bending due to the stress difference in the first layer 220 and the second layer 250. In the method shown in fig. 3A-3C, however, because the first layer 220 and the second layer 250 are deposited and etched simultaneously, the stress differential between the two may be relatively small and thus may be more difficult to create in a large angle bend shape. It will be appreciated that the method shown in fig. 2A-2D is preferred when a large angle bend is desired, such as a bend shape of greater than 90 degrees, greater than 180 degrees, or even greater than 360 degrees; while the method shown in fig. 3a-3C may be preferred for simplicity when only a small angle bend, e.g. a bend shape of less than 90 degrees, needs to be produced.
Fig. 4A-4D are schematic views of steps for preparing a laminate structure according to another exemplary embodiment of the present application. In fig. 4A-4D, the same structures as in fig. 2A-2D and fig. 3A-3C are denoted by the same reference numerals, and only briefly described below to avoid redundancy, some specific details may be found in the embodiments described above.
Referring to fig. 4A, a first layer 220 is formed on a substrate 210. In this embodiment, the first layer 210 has an opening region 211, which may be a via region as shown in fig. 4A, or a region such as a blind hole and a recess. In the step shown in fig. 4A, a first layer 220, which is commercially available or deposited on another substrate, may be transferred onto the substrate 210, with the first layer 220 covering the open area 211 of the substrate 210.
Referring to fig. 4B, a photoresist pattern 230 is formed on the first layer 220, and the first layer 220 is etched using the photoresist pattern 230 to form a body portion of the first layer 220 and an overhanging pattern portion extending from the body portion. In fig. 4B, the body portion is a portion supported on the substrate 210, and the overhanging pattern portion is a portion overhanging from the body portion into the opening region 211. It will be appreciated that the step of forming the photoresist pattern 230 may include spin-coating a liquid photoresist on the first layer 220 shown in fig. 4A, solidifying it by heating, and then removing a portion of the photoresist by an exposure and development process to obtain a desired pattern. Since the solid photoresist has a certain strength, the overhanging pattern portion can maintain its shape.
Then, referring to fig. 4C, the photoresist pattern 230 may be removed, and a second layer 250 may be deposited on the first layer 220. In this step, since the periphery of the overhanging pattern portion of the first layer 220 is hollowed out, the second layer 250 is self-aligned deposited on the overhanging pattern portion of the first layer 220, forming the overhanging pattern portion having a laminated structure. It will be appreciated that since the first layer 220 has some strength, the overhanging pattern portion may still substantially retain its shape during this step, although it may sag due to its own weight as well as the weight of the second layer 250. In addition, the second layer 250 may be deposited onto the body portion of the first layer 210 and the exposed portion of the substrate 210. If desired, a dicing step may be performed later to separate the bulk portion of the laminate structure from the second layer 250 deposited directly on the substrate 210.
Fig. 4D shows the resulting structure after deposition of the second layer 250, wherein the body portion 204 of the stack 202 is supported on the substrate 210, and the overhanging pattern portion 206 of the stack 202 overhangs the body portion 204.
Fig. 5A-5C are schematic views of steps for preparing a laminate structure according to another exemplary embodiment of the present application. In fig. 5A-5C, the same structures as in fig. 2A-2D, fig. 3A-3C, fig. 4A-4D are denoted by the same reference numerals, and only a brief description thereof is provided below to avoid redundancy, and some specific details may be found in the embodiments described above.
Referring to fig. 5A, a first layer 220 and a second layer 250 on the first layer 220 are formed on a substrate 210. The first layer 220 and the second layer 250 may be commercially available or pre-deposited substrates on other substrates, which are transferred to the substrate 210, and the multi-layer film structure of the first layer 220 and the second layer 250 covers the open area 211 of the substrate 210, while the solid portions of the substrate 210 may provide good support for the first layer 220 and the second layer 250.
Referring to fig. 5B, a photoresist pattern 230 is formed on the multi-layered film structure of the first layer 220 and the second layer 250, and the first layer 220 and the second layer 250 are etched to form a stacked structure including a body portion and an overhanging pattern portion extending from the body portion. It will be appreciated that the shape of the body portion and the overhanging pattern portion is defined by the photoresist pattern 230, the body portion being supported on a solid portion of the substrate 210, and the overhanging pattern portion extending from the body portion into the open region 211 of the substrate 210.
After the etching is completed, the photoresist pattern 230 may be removed, and fig. 5C shows the resulting stacked structure 202, including the body portion 204 and the overhanging pattern portion 206, after the photoresist pattern 230 is removed. The body portion 204 is supported on a solid portion of the substrate 210, while the overhanging pattern portion 206 overhangs from the body portion 204, such that one end of the overhanging pattern portion 206 is fixed by being connected to the body portion 204, and the other end is a free end that overhangs, i.e., is not fixedly connected to the substrate 210.
Referring back to fig. 1, the method 100 further includes step S120 of irradiating the overhanging pattern portion of the laminate structure with an electron beam to create a three-dimensional folded structure. In this step, the energy of the electron beam used may be in the range of 8KeV to 30KeV, for example, and the overhanging pattern portion of the second layer may be irradiated globally or locally with the electron beam to create a bent shape in the overhanging pattern portion by inducing stress. It should be appreciated that in step S120, the main body portion of the laminate structure supported on the substrate may also be irradiated, which may also induce stress to bend the overhanging pattern portion. For example, in some embodiments, an electron beam of nanometer-scale precision and very small beam spot may be employed to illuminate the overhanging pattern portion and the body portion of the laminate structure in a straight line point-by-point scan. The following is a detailed description of examples given in connection with fig. 6 to 8.
Referring to fig. 6, a localized area of overhanging pattern portion 206 of laminate structure 202 may be irradiated with an electron beam to create a bent structure. While the specific principles thereof have not been fully understood, the inventors believe that when an electron beam irradiates the second layer 250 in the laminate structure 202, the electron beam bombards atoms in the second layer 250, driving the atoms in motion, which may cause the metal atoms in the second layer 250 to rearrange, thereby introducing stress into the second layer 250, effecting the curling or bending of the overhanging pattern portion 206. In addition, the thermal effect generated during electron beam irradiation may also promote the movement of atoms during electron beam bombardment, contributing to the bending effect to some extent. The inventors have found that the folded shape of the laminate structure 202 may remain after the electron beam irradiation is completed and cooled, which means that the formation of the folded shape is not merely a result of the difference in thermal expansion coefficient between the first layer 220 and the second layer 250 under the thermal effect.
The electron beam may be a line beam, for example, a line beam perpendicular to the paper surface in fig. 6; or may be a spot beam that may scan the overhanging pattern portion 206 along a straight line (e.g., a straight line perpendicular to the page in fig. 6), and the scan line may be moved in a direction to illuminate a localized area of the overhanging pattern portion 206, or may even be so moved to illuminate the global area of the overhanging pattern portion 206. In the example shown in fig. 6, by irradiating the heel region of the overhanging pattern portion 206 and the main body portion in the vicinity thereof with an electron beam, an angled bend is generated in the local region. It will be appreciated that the bending angle may be adjusted by adjusting the dose, energy, angle of incidence, irradiation time of the electron beam, material, thickness, two-dimensional dimensions of the laminate structure, deposition process conditions, shape and size of the irradiated area, etc. For example, in general, the higher the dose and energy of the electron beam, the longer the irradiation time, the larger the irradiation area, and the easier the formation of a larger bending angle. As another example, when the thickness of the second layer 250 relative to the first layer 220 is smaller, the bend angle formed may be smaller. As another example, if the electron beam irradiates the entire width range in the width direction of the overhanging pattern portion 206 perpendicular to the overhanging direction thereof (for example, in the direction perpendicular to the paper surface in fig. 6), a larger bending angle can be generated than the width range of only the irradiated portion. In some embodiments, multiple localized areas of overhanging pattern portion 206 may also be illuminated to achieve a desired bend shape. In some embodiments, different bending directions may be achieved by selecting different materials for the first layer 220 and the second layer 250. For example, when the first layer 220 is formed of Al2O3, bending toward one side of the first layer 220 may be generated; and when the first layer 220 is formed of SiN, a curvature toward the side of the second layer 250 may be generated. In practice, the appropriate conditions may be selected as needed to produce the desired bend direction, angle and shape.
Referring to fig. 7, the overhanging pattern portion 206 and the body portion 204 of the stacked structure 202 may be globally irradiated with an electron beam to create a bent shape. It will be appreciated that irradiation of the overhanging pattern portion 206 may induce deformation in the overhanging pattern portion 206, while irradiation of the body portion 204 may induce isotropic deformation of the plurality of overhanging pattern portions 206 extending from the body portion 204. In the example of fig. 7, the entire stacked structure 202 can be globally irradiated with a large-area electron beam at the same time, which enables high irradiation efficiency and a three-dimensional bent structure to be obtained in a short time.
Fig. 8 shows an embodiment in which a large angle bend is obtained. In the example of fig. 8, the overhanging pattern portion 206 may be scanned along a straight line using an electron beam having a smaller beam spot size, and the straight line position is moved from the free end of the overhanging pattern portion 206 toward the fixed end (i.e., root) of the overhanging pattern portion 206, as indicated by a broken-line arrow in fig. 8. In this way, a bend may be formed over the entire extension of the overhanging pattern portion 206, helping to achieve a greater degree of bending, such as a 360 ° or even greater bending angle.
As can be appreciated from the examples described above with reference to fig. 6 to 8, in the present application, the overhanging pattern portion can be irradiated with an electron beam in various flexible manners to obtain a desired bending structure. The metal film in the overhanging pattern portion is irradiated with electron beams, and atoms in the metal film can be driven to move, thereby introducing stress, and causing the film to curl or fold in three dimensions under the action of the stress. The bending degree, folding angle and the like of the three-dimensional micro-nano structure can be precisely controlled by controlling the dose, energy, incident angle and irradiation time of electron beam irradiation, the material, thickness, two-dimensional size and deposition process condition of the laminated structure, the shape and size of an irradiation area and the like, and various three-dimensional configurations can be designed through different combinations of curling and folding. In addition, the deformation range of the curl and fold may be determined by changing the kind and thickness of the first layer material and/or the second layer material and the deposition rate, the structure and size of the overhanging pattern portion of the laminate structure, and the like.
It should be appreciated that although the first layer 220 is described above as a dielectric layer and the second layer 250 is a metal layer, the materials of the first layer 220 and the second layer 250 are not limited to these particular examples. In a more general embodiment, as long as the materials of the first layer 220 and the second layer 250 are different from each other, bending may occur by inducing stress under irradiation of electron beams. Of course, the inventors have found that the first layer 220 and the second layer 250 are preferably dielectric and metal, respectively, and that the electron beam preferably irradiates the metal layer directly, which more easily results in a large angle of bending structure. Although the specific principle is not yet clarified, the inventors believe that it is possible to more easily produce a bending shape of a large angle because metal atoms are easily driven to move under electron beam bombardment to introduce stress, while dielectrics easily produce a stress difference with respect to metals.
In the application, the electron beam is adopted to induce the two-dimensional film and the pattern to generate the three-dimensional structure, which has a plurality of advantages compared with the ion beam induction mode. The inventors of the present application have found in research that ion beam induced bending techniques suffer from a number of problems: firstly, the method is limited by experimental equipment, so that higher processing cost is caused; secondly, when the size of the three-dimensional structure is reduced, the processing speed of the three-dimensional structure is obviously slowed down, and the processing time and the cost are obviously improved; thirdly, all ion-induced assembly is based on ion implantation, unavoidable sputtering is caused when ion implantation causes impurities, the incident ions bombard the material, serious physical damage is caused to sensitive materials or ultrathin structures, and the universality is limited; fourth, the ion beam-based assembly technique has a great limitation on folding directivity, and particularly, the folding components start to block the ion irradiation path after the folding angle reaches 90 degrees, which hinders further folding. The above problems can be solved by electron beam induction. The electron beam apparatus is lower in cost than the ion beam apparatus and the beam spot size of the electron beam can be easily and precisely controlled, thereby achieving rapid and precise irradiation, and a flexible irradiation manner contributes to obtaining a desired bending shape and a larger bending angle. The electron beam induction mode can also avoid the defects of damaging the surface of the material and implanting ion impurities in the material in the ion beam induction mode, and improve the flexibility of micro-nano structure processing and the low-damage processing capability of the material. Therefore, the electron beam irradiation scheme of the application has great significance in designing and processing three-dimensional metamaterial with new configuration, high material sensitivity and purity requirements, and has guiding effect on processing and designing other three-dimensional devices.
Fig. 9 and 10 illustrate photographs of three-dimensional micro-nano bent structures prepared according to some exemplary embodiments of the present application. In fig. 9, four overhanging pattern portions, each of which achieves a large bending angle up to about 360 °, extend all around from the same body portion. In fig. 10, a small bending angle is achieved, which is approximately less than 90 °.
The principles of the present application have been described above by describing some exemplary embodiments with reference to the accompanying drawings. It should be understood that these exemplary embodiments should not be construed as limiting the application. Changes in form and detail may be made to these embodiments by those skilled in the art based on the above teachings without departing from the principles of the application. For example, the first layer may be formed over the second layer, or the first layer may be irradiated with an electron beam, which also produces a heating effect, thereby producing deformation by inducing a stress change. Such changes in form and detail, which do not depart from the principles of the application, are intended to be within the scope of the application as defined by the appended claims.
The preparation method of the three-dimensional micro-nano structure provided by the embodiment of the application has the characteristics of simple process, high success rate, low cost, low requirement on experimental equipment, rich configuration and accurate and controllable characteristic dimension, and plays an important role in the design and processing of future three-dimensional devices.
The basic principles of the present application have been described above in connection with specific embodiments, however, it should be noted that the advantages, benefits, effects, etc. mentioned in the present application are merely examples and not intended to be limiting, and these advantages, benefits, effects, etc. are not to be considered as essential to the various embodiments of the present application. Furthermore, the specific details disclosed herein are for purposes of illustration and understanding only, and are not intended to be limiting, as the application is not necessarily limited to practice with the above described specific details.
The block diagrams of the devices, apparatuses, devices, systems referred to in the present application are only illustrative examples and are not intended to require or imply that the connections, arrangements, configurations must be made in the manner shown in the block diagrams. As will be appreciated by one of skill in the art, the devices, apparatuses, devices, systems may be connected, arranged, configured in any manner. Words such as "including," "comprising," "having," and the like are words of openness and mean "including but not limited to," and are used interchangeably therewith. The terms "or" and "as used herein refer to and are used interchangeably with the term" and/or "unless the context clearly indicates otherwise. The term "such as" as used herein refers to, and is used interchangeably with, the phrase "such as, but not limited to.
It is also noted that in the apparatus, devices and methods of the present application, the components or steps may be disassembled and/or assembled. Such decomposition and/or recombination should be considered as equivalent aspects of the present application.
The previous description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other aspects without departing from the scope of the application. Thus, the present application is not intended to be limited to the aspects shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
The foregoing description has been presented for purposes of illustration and description. Furthermore, this description is not intended to limit embodiments of the application to the form disclosed herein. Although a number of example aspects and embodiments have been discussed above, a person of ordinary skill in the art will recognize certain variations, modifications, alterations, additions, and subcombinations thereof.
Claims (11)
1. A method for preparing a three-dimensional bent structure using an electron beam, comprising:
preparing a laminate structure comprising at least a first layer and a second layer on the first layer, the laminate structure having a body portion supported on a substrate and at least one overhanging pattern portion extending from the body portion;
irradiating the overhanging pattern portion with an electron beam to bend the overhanging pattern portion, thereby obtaining a three-dimensional bending structure,
wherein the first layer is formed of a dielectric material that is etched to form a body portion and an overhanging pattern portion extending from the body portion; the second layer is formed of a metallic material.
2. The method of claim 1, wherein preparing a laminate structure comprises:
forming the first layer on the substrate;
etching the first layer to form a body portion and an overhanging pattern portion extending from the body portion;
forming a sacrificial layer pattern on the substrate, the sacrificial layer pattern exposing a body portion and an overhanging pattern portion of the first layer;
depositing a second layer on the sacrificial layer pattern and the body and overhanging pattern portions of the first layer;
removing the sacrificial layer pattern and a portion of the second layer deposited on the sacrificial layer pattern to obtain the laminated structure; and
a portion of the substrate underlying an overhanging pattern portion of the laminate structure is removed such that the body portion is supported on the substrate and the overhanging pattern portion overhangs from the body portion.
3. The method of claim 1, wherein preparing a laminate structure comprises:
forming a first layer on the substrate and a second layer on the first layer;
etching the first layer and the second layer to form a stacked structure including a body portion and an overhanging pattern portion extending from the body portion; and
a portion of the substrate underlying an overhanging pattern portion of the laminate structure is removed such that the body portion is supported on the substrate and the overhanging pattern portion overhangs from the body portion.
4. The method of claim 1, wherein preparing a laminate structure comprises:
transferring a first layer onto the substrate, the substrate having at least one open area, the first layer covering the open area of the substrate;
etching the first layer to form a body portion supported by the substrate and at least one overhanging pattern portion extending from the body portion into an open region of the substrate; and
the second layer is deposited over the first layer.
5. The method of claim 1, wherein preparing a laminate structure comprises:
transferring a multilayer film comprising at least a first layer and a second layer on the first layer onto the substrate, the substrate having at least one open area, the multilayer film covering the open area of the substrate; and
the multilayer film is etched to form a body portion supported by the substrate and at least one overhanging pattern portion extending from the body portion into an opening region of the substrate.
6. The method of claim 1, wherein irradiating the overhanging pattern portion with an electron beam comprises:
the overhanging pattern portion of the second layer is globally irradiated or irradiated with an electron beam.
7. The method of claim 6, wherein globally or locally irradiating the overhanging pattern portion of the second layer with an electron beam comprises:
the whole or partial area of the overhanging pattern portion of the second layer is scanned point by point with an electron beam.
8. A three-dimensional folded structure made by the method of any one of claims 1-7, having a laminate structure comprising at least a first layer and a second layer on the first layer, the laminate structure comprising a body portion and at least one three-dimensional folded portion extending from the body portion.
9. The three-dimensional bending structure of claim 8 wherein the first and second layers each have a thickness in the range of 1nm to 100 μιη.
10. The three-dimensional bending structure of claim 8 wherein the first and second layers each have a thickness in the range of 1nm to 1 μιη.
11. The three-dimensional bending structure of claim 8 wherein the first and second layers each have a thickness in the range of 1nm to 100 nm.
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Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1807222A (en) * | 2005-12-27 | 2006-07-26 | 北京大学 | Method for preparing nanometer suspension arm structure using nanometer embossing and reactive ion etching technology |
| WO2010129319A2 (en) * | 2009-04-28 | 2010-11-11 | The Johns Hopkins University | Self-assembly of lithographically patterned polyhedral nanostructures and formation of curving nanostructures |
| JP2011140072A (en) * | 2010-01-05 | 2011-07-21 | National Institute Of Advanced Industrial Science & Technology | Method of bending thin-film member |
| CN103043600A (en) * | 2012-12-13 | 2013-04-17 | 中国科学院物理研究所 | Preparation method of three-dimensional self-supporting micro-nano functional structure based on thin film material |
| WO2014069962A1 (en) * | 2012-11-05 | 2014-05-08 | 세종대학교 산학협력단 | Method and device for measuring surface roughness of deposited thin film |
| CN104445139A (en) * | 2014-11-04 | 2015-03-25 | 东南大学 | Method for preparing single-wall carbon nanotube |
| CN104599979A (en) * | 2015-01-05 | 2015-05-06 | 中国科学院物理研究所 | Self supporting three dimension device and preparation method thereof |
| CN204529302U (en) * | 2015-01-05 | 2015-08-05 | 中国科学院物理研究所 | Self-supporting three-dimension device |
| CN106744657A (en) * | 2016-12-09 | 2017-05-31 | 中国科学院上海微系统与信息技术研究所 | A kind of preparation method of three-dimensional GeSn micro/nano-scales cantilever design |
| WO2017145706A1 (en) * | 2016-02-25 | 2017-08-31 | 国立研究開発法人産業技術総合研究所 | Method for bending thin film member |
| JP2018094661A (en) * | 2016-12-12 | 2018-06-21 | 国立研究開発法人産業技術総合研究所 | Method for manufacturing fine three-dimensional structure |
| CN108217578A (en) * | 2017-12-18 | 2018-06-29 | 中国科学院物理研究所 | A kind of preparation method of micro-nano warp architecture |
| KR20180127730A (en) * | 2017-05-22 | 2018-11-30 | 한국과학기술원 | Foldable electronic device, and method of manufacturing the same |
| CN110095950A (en) * | 2019-05-08 | 2019-08-06 | 北京理工大学 | A method of preparing differently curved degree nano beam |
| CN110143566A (en) * | 2019-04-22 | 2019-08-20 | 中国科学院物理研究所 | A kind of preparation method of three-D micro-nano origami structure |
| CN112242371A (en) * | 2019-07-19 | 2021-01-19 | 意法半导体(鲁塞)公司 | Method of manufacturing thin semiconductor chip using sacrificial sidewall layer and apparatus therefor |
| CN114715837A (en) * | 2020-12-22 | 2022-07-08 | 中国科学院上海微系统与信息技术研究所 | Method for manufacturing nano cantilever beam with recoverable deformation |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004041998A2 (en) * | 2002-05-07 | 2004-05-21 | California Institute Of Technology | Nanomechanichal energy, force, and mass sensors |
| US7709264B2 (en) * | 2006-09-21 | 2010-05-04 | Philip Morris Usa Inc. | Handheld microcantilever-based sensor for detecting tobacco-specific nitrosamines |
| DE102007055540A1 (en) * | 2006-11-29 | 2008-06-19 | Sii Nano Technology Inc. | Method for correcting photomask defects |
| US9437738B2 (en) * | 2014-02-07 | 2016-09-06 | Taiwan Semiconductor Manufacturing Company Ltd. | Field effect transistor with heterostructure channel |
-
2021
- 2021-03-04 CN CN202110238211.9A patent/CN113023667B/en active Active
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1807222A (en) * | 2005-12-27 | 2006-07-26 | 北京大学 | Method for preparing nanometer suspension arm structure using nanometer embossing and reactive ion etching technology |
| WO2010129319A2 (en) * | 2009-04-28 | 2010-11-11 | The Johns Hopkins University | Self-assembly of lithographically patterned polyhedral nanostructures and formation of curving nanostructures |
| JP2011140072A (en) * | 2010-01-05 | 2011-07-21 | National Institute Of Advanced Industrial Science & Technology | Method of bending thin-film member |
| WO2014069962A1 (en) * | 2012-11-05 | 2014-05-08 | 세종대학교 산학협력단 | Method and device for measuring surface roughness of deposited thin film |
| CN103043600A (en) * | 2012-12-13 | 2013-04-17 | 中国科学院物理研究所 | Preparation method of three-dimensional self-supporting micro-nano functional structure based on thin film material |
| CN104445139A (en) * | 2014-11-04 | 2015-03-25 | 东南大学 | Method for preparing single-wall carbon nanotube |
| CN104599979A (en) * | 2015-01-05 | 2015-05-06 | 中国科学院物理研究所 | Self supporting three dimension device and preparation method thereof |
| CN204529302U (en) * | 2015-01-05 | 2015-08-05 | 中国科学院物理研究所 | Self-supporting three-dimension device |
| WO2017145706A1 (en) * | 2016-02-25 | 2017-08-31 | 国立研究開発法人産業技術総合研究所 | Method for bending thin film member |
| CN106744657A (en) * | 2016-12-09 | 2017-05-31 | 中国科学院上海微系统与信息技术研究所 | A kind of preparation method of three-dimensional GeSn micro/nano-scales cantilever design |
| JP2018094661A (en) * | 2016-12-12 | 2018-06-21 | 国立研究開発法人産業技術総合研究所 | Method for manufacturing fine three-dimensional structure |
| KR20180127730A (en) * | 2017-05-22 | 2018-11-30 | 한국과학기술원 | Foldable electronic device, and method of manufacturing the same |
| CN108217578A (en) * | 2017-12-18 | 2018-06-29 | 中国科学院物理研究所 | A kind of preparation method of micro-nano warp architecture |
| CN110143566A (en) * | 2019-04-22 | 2019-08-20 | 中国科学院物理研究所 | A kind of preparation method of three-D micro-nano origami structure |
| CN110095950A (en) * | 2019-05-08 | 2019-08-06 | 北京理工大学 | A method of preparing differently curved degree nano beam |
| CN112242371A (en) * | 2019-07-19 | 2021-01-19 | 意法半导体(鲁塞)公司 | Method of manufacturing thin semiconductor chip using sacrificial sidewall layer and apparatus therefor |
| CN114715837A (en) * | 2020-12-22 | 2022-07-08 | 中国科学院上海微系统与信息技术研究所 | Method for manufacturing nano cantilever beam with recoverable deformation |
Non-Patent Citations (3)
| Title |
|---|
| 张明龙等.《美国材料领域的创新信息概述》.企业管理出版社,2016,(第第1版版),第263-264页. * |
| 泡沫铝/PC树脂/铝合金叠层复合材料的制备与性能研究;金明江, 赵玉涛, 戴起勋, 程晓农, 罗平辉;材料科学与工程学报(第04期);全文 * |
| 美成功折出使纳米级底板弯曲成三维形状的"纳米折纸";潘雄;;功能材料信息(第03期);全文 * |
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