CN110095950A - A method of preparing differently curved degree nano beam - Google Patents
A method of preparing differently curved degree nano beam Download PDFInfo
- Publication number
- CN110095950A CN110095950A CN201910378992.4A CN201910378992A CN110095950A CN 110095950 A CN110095950 A CN 110095950A CN 201910378992 A CN201910378992 A CN 201910378992A CN 110095950 A CN110095950 A CN 110095950A
- Authority
- CN
- China
- Prior art keywords
- nano
- nano beam
- differently curved
- curved degree
- preparing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2049—Exposure; Apparatus therefor using a cantilever
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
The present invention relates to a kind of methods for preparing differently curved degree nano beam, belong to micro-nano technology field.The invention discloses a kind of method for preparing differently curved degree nano beam, the main preparation completed using focused-ion-beam lithography system (FIB) to differently curved degree nano beam is related to micro-nano technology field.The present invention etches sample by FIB, buffered hydrofluoric acid solution corrosion two steps of sample prepare nano beam, and the nano beam of differently curved degree is prepared by the line size and sweep time that control focused ion beam.The present invention provides a kind of method for preparing differently curved degree nano beam, preparation method is simple, preparation precision is high, provides novel nano platform for the photodynamic research of chamber, lays a good foundation for the research of luminous power nano-device.
Description
Technical field
The present invention relates to micro-nano technology fields, and in particular to a method of prepare differently curved degree nano beam.
Background technique
Optical microcavity is a kind of micro/nano-scale optical device that light wave can be made to form resonance in wherein roundtrip, Ke Yiyong
It is realized under sub-wavelength dimensions and the local of light field is acted on, improve the interaction between light and substance.Common optical microcavity
There are Fabry-Perot-type cavity, micro- disk chamber, micro-loop chamber, Microsphere Cavities and photon crystal micro cavity.Beam of the different optical microcavities to light field
It ties up that ability is also different, introduces two parameters of quality factor q and mode volume V to characterize the strong of optical microcavity local light ability
It is weak.Q value is higher, and V value is lower, i.e., Q/V is bigger, shows that the ability of microcavity constraint light field is stronger, is more conducive to enhance light and substance
Interaction.
Nano beam is a kind of optics with nanometer scale geometric dimension, high quality factor and minimum mode volume
Resonant cavity, realizing the Q value of same order and in the case where V value, nano beam because of the feature that own dimensions are small, structure is simple,
It is integrated to be easily achieved on piece, is more advantageous to the preparation of the following photonic integrated device.Currently, nano beam is in biosensor technique, non-
The fields such as linear optics, Eurytrema coelomatium, photodynamics and quantum communication have a wide range of applications.
The common method for preparing nano beam structure is electron beam exposure (EBL).The method for preparing hanging nano beam based on EBL
It is generally divided into following steps: (1) in sample surfaces resist coating；(2) electron beam exposure；(3) developing fixing；(4) ICP/RIE is carved
Lose air pore structure out；(5) hydrogen fluoride buffers corrosion sample.After completing above-mentioned steps, hanging nano beam is obtained, is based on EBL
The operating process for preparing hanging nano beam is complicated, and time-consuming, it is difficult to prepare the nano beam of differently curved degree.
Summary of the invention
The object of the present invention is to provide a kind of method for preparing differently curved degree nano beam, this method preparation flow letters
It is single, and the nano beam of differently curved degree can be prepared, and can regulate and control to nano beam bending degree；
Specific steps are as follows: utilize the excitation of focused ion beam lithography technology (FIB) direct etching nano beam and its two sides
End and waveguiding structure, the intact sample buffered hydrofluoric acid solution etched is finally corroded, prepare hanging nano beam, i.e. two steps
Method prepares hanging nano beam, substantially increases the efficiency for preparing sample.Sample is put and is observed under a scanning electron microscope, with from
Beamlet scans sample surfaces, by controlling the time of ion-beam scanning and the size of line, prepares receiving for differently curved degree
Meter Liang, sweep time is longer, and line is bigger, and the bending degree of nano beam will be bigger, for the nanometer for preparing differently curved degree
Beam provides experimental method.Above method preparation flow is simple, can disposably prepare intact sample, and can regulate and control nano beam
Bending degree, provide a platform for the nano beam physical property that people study differently curved degree.
The purpose of the present invention is what is be achieved through the following technical solutions.
A kind of nano beam, the nano beam are warp architecture, and the bending degree of the nano beam is controllable；
A method of preparing differently curved degree nano beam, the specific steps are as follows:
Step 1: the sample that middle layer is silica is put into focused ion beam electron beam double-beam system, regulate
Electronic Speculum and ion beam focusing astigmatism, setting focused ion beam line are that (several pA to tens pA) etch air to lesser line
Hole；Setting focused ion beam line be larger line (tens pA select suitable etching depth to several hundred pA), using focusing from
Beamlet etches nano beam and its two sides excitation end and waveguiding structure.
Step 2: the sample that step 1 is obtained is put into configured buffered hydrofluoric acid solution, corrode the dioxy in sample
SiClx layer takes out sample, obtains hanging nano beam.
Step 3: the hanging nano beam that step 2 is obtained is put into focused ion beam electron beam double-beam system, with focusing
Ion-beam scanning sample surfaces prepare the nano beam of differently curved degree by control sweep time and line size.
The utility model has the advantages that
1, a kind of method for preparing differently curved degree nano beam disclosed by the invention, it is direct with focused ion beam (FIB)
It etches nano beam and its end and waveguiding structure is swashed in two sides, then corrode sample with buffered hydrofluoric acid solution, prepare hanging nano beam.
Compared with the experimental method of traditional electron beam exposure (EBL) preparation nano beam, the present invention provides a kind of new to be used to prepare
The method of nano beam, preparation flow is simple, can disposably complete the etching of nano beam and two sides excitation end and waveguide, improve system
The standby efficiency for testing required sample.
2, a kind of method for preparing differently curved degree nano beam disclosed by the invention, by controlling focused ion beam line
Size and sweep time can prepare the nano beam of differently curved degree, and the physical property for research bending nano beam provides
Experiment porch.
3, a kind of method for preparing differently curved degree nano beam disclosed by the invention is unlimited to the material of nano beam itself
System, applicability are extensive.
4, a kind of method for preparing differently curved degree nano beam disclosed by the invention can be hanging nano beam by not
Nano platform is provided with mechanics effect research when stress.
Detailed description of the invention
Fig. 1 etches nano beam flow chart using FIB: (a) utilizing FIB etching airport structure nano beam schematic diagram (b) benefit
With FIB etching nano beam two sides excitation end and waveguide schematic diagram；
The hanging nano beam of Fig. 2；
The hanging nano beam of the differently curved degree of Fig. 3: (a) nano beam of bending degree 500nm；(b) bending degree
The nano beam of 1000nm；
Fig. 4 etches nano beam Electronic Speculum flow chart: (a) airport nano beam electron microscope using FIB；(b) nano beam and its two
Side excites end and waveguide electron microscope；
The hanging nano beam electron microscope of Fig. 5；
The differently curved degree nano beam electron microscope of Fig. 6: (a) the nano beam electron microscope of bending degree 500nm；(b) it is bent journey
Spend the nano beam electron microscope of 1000nm.
Specific embodiment
Objects and advantages in order to better illustrate the present invention with reference to the accompanying drawing do further summary of the invention with example
Explanation
Embodiment 1:
The example mentioned in the specific embodiment be using focused-ion-beam lithography SOI Substrate (substrate is silicon, above according to
Secondary is the silicon of the silica of 2 micron thickness and 220 nano thickness), geometric dimension is 7.2 μm of 0.56 μ m, and bending degree is
500nm nano beam.
Prepare the method that above-mentioned bending degree is 500nm nano beam, the specific steps are as follows:
Step 1: SOI is put into focused ion beam electron beam double-beam system as shown in Fig. 1 (a), focused ion is set
Beam line is 7.7pA, etches airport；Setting focused ion beam line is 80pA, selects suitable etching depth etching nanometer
Beam upper and lower ends region facilitates hydrofluoric acid to corrode until exposing silicon dioxide layer, prepares to prepare hanging nano beam below.
As shown in Fig. 1 (b), keep line size 80pA constant, etching nano beam two sides excitation end and waveguiding structure obtain
Sample.
Step 2: as shown in Fig. 2, 40% ammonium fluoride and 40% hydrofluoric acid according to volume ratio 4.9:1 proportional arrangement
At buffered hydrofluoric acid solution, the sample that step 1 is obtained is put into configured buffered hydrofluoric acid solution, corrodes silicon dioxide layer, meter
Shi Yuewu minutes (specific etching time can make adjustment according to the actual situation), sample is taken out, hanging nano beam is obtained.
Step 3: the hanging nano beam that step 2 is obtained is put into focused ion beam electron beam double-beam system, with focusing
Ion-beam scanning sample surfaces can prepare the nano beam of differently curved degree by control sweep time and line size.
As shown in Fig. 3 (a), setting ion beam line is 7.7pA, and control sweep time is 2s, and the degree of being bent is
The nano beam of 500nm.The bending degree of nano beam is defined as nano beam Depression Centers to horizontal distance.
Embodiment 2:
The example mentioned in the specific embodiment be using focused-ion-beam lithography SOI Substrate (substrate is silicon, above according to
Secondary is the silicon of the silica of 2 micron thickness and 220 nano thickness), geometric dimension is 7.2 μm of 0.56 μ m, and bending degree is
1000nm nano beam.
The method that above-mentioned bending degree is 1000nm nano beam is prepared, specific steps are with the above-mentioned bending degree for preparing
The process of 500nm nano beam is identical.
As shown in Fig. 3 (b), setting ion beam line is 7.7pA, and control sweep time is 4s, and the degree of being bent is
The nano beam of 1000nm.
Embodiment 3:
The example mentioned in the specific embodiment be using focused-ion-beam lithography SOI Substrate (substrate is silicon, above according to
Secondary is the silicon of the silica of 2 micron thickness and 220 nano thickness), geometric dimension is 7.2 μm of 0.56 μ m, and bending degree is
1500nm nano beam.
The method that above-mentioned bending degree is 1500nm nano beam is prepared, specific steps are with the above-mentioned bending degree for preparing
The process of 500nm, 1000nm nano beam is identical.
Setting ion beam line is 7.7pA, and control sweep time is 6s, is bent the nano beam that degree is 1500nm.
So far, the preparation of differently curved degree nano beam is completed.
As a result it characterizes:
As shown in figure 4, (a) and (b) is respectively nano beam and two sides excitation end structure electron microscope.
As shown in figure 5, hanging nano beam electron microscope, the silica exposed in etching process is completely by buffered hydrofluoric acid solution
Corrode.
As shown in fig. 6, the nano beam electron microscope of differently curved degree, when by control ion beam line size and scanning
Between, realize the preparation of differently curved degree nano beam.
Above-described specific descriptions have carried out further specifically the purpose of invention, technical scheme and beneficial effects
It is bright, it should be understood that the above is only a specific embodiment of the present invention, the protection model being not intended to limit the present invention
It encloses, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the present invention
Protection scope within.
Claims (7)
1. a kind of method for preparing differently curved degree nano beam, it is characterised in that: directly etched on dielectric material using FIB
Airport nano beam and its two sides excite end, and total is put into buffered hydrofluoric acid solution and is corroded, hanging nano beam is prepared,
Hanging nano beam is put into focused ion beam electron beam double-beam system, with ion-beam scanning sample surfaces, is prepared curved
Nano beam.
2. a kind of method for preparing differently curved degree nano beam as described in claim 1, it is characterised in that: by control from
Beamlet sweep time and line size prepare the airport nano beam of differently curved degree.
3. a kind of method for preparing differently curved degree nano beam as described in claim 1, it is characterised in that: the nano beam
Bending degree for warp architecture, the nano beam is controllable.
4. a kind of method for preparing differently curved degree nano beam as described in claim 1, it is characterised in that: the shape of airport
Shape includes the figure that round, rectangular, triangle, diamond shape, trapezoidal etc. can be processed with FIB；The size of airport is 10nm-2 μm, and
And it is less than nanometer beam width and length.
5. a kind of method for preparing differently curved degree nano beam as described in claim 1, it is characterised in that: airport nanometer
The width of beam is 200nm-2 μm.
6. a kind of method for preparing differently curved degree nano beam as described in claim 1, it is characterised in that: airport nanometer
The length of beam is 1 μm -50 μm.
7. a kind of method for preparing differently curved degree nano beam as described in claim 1, it is characterised in that: material it is most upper
Layer is the dielectric material or metal material that cannot react with buffered hydrofluoric acid solution, and with a thickness of 30nm-2um, the second layer is can be with
The oxide of buffered hydrofluoric acid solution reaction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910378992.4A CN110095950A (en) | 2019-05-08 | 2019-05-08 | A method of preparing differently curved degree nano beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910378992.4A CN110095950A (en) | 2019-05-08 | 2019-05-08 | A method of preparing differently curved degree nano beam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110095950A true CN110095950A (en) | 2019-08-06 |
Family
ID=67447353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910378992.4A Pending CN110095950A (en) | 2019-05-08 | 2019-05-08 | A method of preparing differently curved degree nano beam |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110095950A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113023667A (en) * | 2021-03-04 | 2021-06-25 | 中国科学院物理研究所 | Three-dimensional micro-nano bending structure and method for preparing same by using electron beam |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101499784A (en) * | 2009-02-20 | 2009-08-05 | 上海工程技术大学 | Production method for novel piezoelectric thin-film resonator |
| CN103033880A (en) * | 2012-12-25 | 2013-04-10 | 浙江大学 | Method for preparing intermediate and long infrared undercut type optical waveguides based on silicon on insulator (SOI) materials |
| CN103619752A (en) * | 2011-12-26 | 2014-03-05 | 韩国标准科学研究院 | Movement-free bending method for one-dimensional or two-dimensional nanostructure using ion beam |
| CN103728692A (en) * | 2013-12-30 | 2014-04-16 | 清华大学 | Calendar crystal microcavity based on nano beam structure |
| CN204529302U (en) * | 2015-01-05 | 2015-08-05 | 中国科学院物理研究所 | Self-supporting three-dimension device |
| CN108217578A (en) * | 2017-12-18 | 2018-06-29 | 中国科学院物理研究所 | A kind of preparation method of micro-nano warp architecture |
-
2019
- 2019-05-08 CN CN201910378992.4A patent/CN110095950A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101499784A (en) * | 2009-02-20 | 2009-08-05 | 上海工程技术大学 | Production method for novel piezoelectric thin-film resonator |
| CN103619752A (en) * | 2011-12-26 | 2014-03-05 | 韩国标准科学研究院 | Movement-free bending method for one-dimensional or two-dimensional nanostructure using ion beam |
| CN103033880A (en) * | 2012-12-25 | 2013-04-10 | 浙江大学 | Method for preparing intermediate and long infrared undercut type optical waveguides based on silicon on insulator (SOI) materials |
| CN103728692A (en) * | 2013-12-30 | 2014-04-16 | 清华大学 | Calendar crystal microcavity based on nano beam structure |
| CN204529302U (en) * | 2015-01-05 | 2015-08-05 | 中国科学院物理研究所 | Self-supporting three-dimension device |
| CN108217578A (en) * | 2017-12-18 | 2018-06-29 | 中国科学院物理研究所 | A kind of preparation method of micro-nano warp architecture |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113023667A (en) * | 2021-03-04 | 2021-06-25 | 中国科学院物理研究所 | Three-dimensional micro-nano bending structure and method for preparing same by using electron beam |
| CN113023667B (en) * | 2021-03-04 | 2023-11-10 | 中国科学院物理研究所 | Three-dimensional micro-nano bending structure and method for preparing same by utilizing electron beam |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8415640B2 (en) | Diamond nanowires | |
| CN110095950A (en) | A method of preparing differently curved degree nano beam | |
| US20080121614A1 (en) | Methods for manufacturing optical fiber probe and for processing micromaterial | |
| Li et al. | A Fiber-Coupled Scanning Magnetometer with Nitrogen-Vacancy Spins in a Diamond Nanobeam | |
| Nonahal et al. | Engineering quantum nanophotonic components from hexagonal boron nitride | |
| Wang et al. | Three-dimensional near-field analysis through peak force scattering-type near-field optical microscopy | |
| Krumrein et al. | Precise Characterization of a Waveguide Fiber Interface in Silicon Carbide | |
| Uğurlu et al. | Suspended Spot‐Size Converters for Scalable Single‐Photon Devices | |
| Kumar et al. | Coupling of single quantum emitters to plasmons propagating on mechanically etched wires | |
| US10605827B2 (en) | Metallic device for scanning probe microscopy and method for manufacturing same | |
| Srinivasan et al. | Micromachined arrays of cantilevered glass probes | |
| Sasaki et al. | Anisotropically etched Si mold for solid polymer dye microcavity laser | |
| Krumrein et al. | Precise characterization of a silicon carbide waveguide fiber interface | |
| Wehrspohn et al. | Linear and non‐linear optical experiments based on macroporous silicon photonic crystals | |
| Ródenas Seguí | Subtractive 3D Laser Nanolithography of Crystals by Giant Wet-Chemical Etching Selectivity | |
| Tsigara et al. | Fabrication and mechanical properties of an organo-mineral cantilever-based probe for near-field optical microscopy | |
| Halimi et al. | Photonic crystal design with mix and match unit cells for mode manipulation | |
| Srinivasan et al. | Micromachined near-field probe arrays | |
| CN113465515B (en) | Optical mechanical microcavity structure with all-optical integration and nonlinear mechanical oscillator | |
| Lei et al. | Loading-effect-based 3-D microfabrication empowers on-chip Brillouin optomechanics | |
| Kumada et al. | Enhanced optical gain assisted by the plasmonic effects of Au nanoparticles in Nd³⁺ doped TeO₂-ZnO waveguides produced with the pedestal architecture | |
| Wang | Optomechanically Coupled Nanospike Array Fabricated on the Endface of a Soft-Glass Photonic Crystal Fiber | |
| Pautrel et al. | Efficient optical coupling to gallium arsenide nano-waveguides and resonators with etched conical fibers | |
| Burek | Free-standing nanomechanical and nanophotonic structures in single-crystal diamond | |
| Vermeulen et al. | Integrated photonics in single-crystal diamond: demonstration of mm-long waveguides, high-efficiency gratings and wideband directional couplers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190806 |
|
| RJ01 | Rejection of invention patent application after publication |