CN109216188A - Flexible interconnection line and its manufacturing method and measurement method of parameters - Google Patents
Flexible interconnection line and its manufacturing method and measurement method of parameters Download PDFInfo
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- CN109216188A CN109216188A CN201811042751.4A CN201811042751A CN109216188A CN 109216188 A CN109216188 A CN 109216188A CN 201811042751 A CN201811042751 A CN 201811042751A CN 109216188 A CN109216188 A CN 109216188A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/20—Metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
This disclosure relates to a kind of flexible interconnection line and its manufacturing method and measurement method of parameters.The flexible interconnection line includes flexible substrates and flexible interconnection structure, flexible interconnection structure includes the first film layer, the first metal layer and the second film layer being sequentially arranged on a flexible substrate, flexible interconnection structure includes the interconnecting piece at both ends and the connecting line between interconnecting piece, wherein, flexible substrates, the first film layer and the second film layer are fabricated from a flexible material.The manufacturing method for the flexible interconnection line that the embodiment of the present disclosure provides, can enhance the ductility and reliability of flexible interconnection line, to meet the use demand of user.
Description
Technical field
This disclosure relates to technical field of electronic devices more particularly to a kind of flexible interconnection line and its manufacturing method and parameter
Measurement method.
Background technique
Flexible electronic device has by its unique flexible and ductility in fields such as information, the energy, medical treatment, national defence
It is widely applied.In the related technology, it in extending flexible electronic device, is led between electronic component by flexible extending interconnection
Line connection, flexible interconnection conducting wire can not only make electronic device have ductility, while flexible interconnection conducting wire is when deformation occurs
Have on the transmission of whole system signal and significantly affects.Therefore, how providing one kind, electric conductivity is reliable simultaneously with ductility
Flexible interconnection conducting wire be a problem to be solved.
Summary of the invention
In view of this, the present disclosure proposes a kind of flexible interconnection line and its manufacturing method and measurement method of parameters.
According to the disclosure in a first aspect, providing a kind of flexible interconnection line, comprising:
Flexible substrates；
Flexible interconnection structure, including the first film layer, the first metal layer and being sequentially arranged in the flexible substrates
Two film layers, the interconnecting piece and the connecting line between the interconnecting piece that the flexible interconnection structure includes both ends,
Wherein, the flexible substrates, the first film layer and second film layer are fabricated from a flexible material.
For above-mentioned flexible interconnection line, in one possible implementation, the first metal of the flexible interconnection structure
Layer includes the first adhesive layer and the first conductive layer, and first adhesive layer includes chromium or titanium, first conductive layer include gold,
Silver and copper in any one,
Wherein, the shape of the connecting line includes snakelike, S-shaped, grid-shaped, star and any one of quincunx.
According to the second aspect of the disclosure, a kind of manufacturing method of flexible interconnection line is provided, which comprises
Sacrificial layer, the first film layer and the first metal layer are sequentially generated on substrate；
Processing is performed etching to the first metal layer, the first metal layer after forming etching；
The second film layer is generated on the expose portion of the first metal layer and the first film layer after the etching；
The deposition mask layer in second film layer；
The mask layer and second film layer are etched, flexible interconnection structure to be transferred is formed；
The flexible interconnection structure to be transferred is transferred in flexible substrates, the flexible interconnection structure after forming transfer；
The first film layer of flexible interconnection structure after etching the transfer simultaneously removes the mask layer after etching, obtains flexible
Interconnection line.
For the manufacturing method of above-mentioned flexible interconnection line, in one possible implementation, the first metal layer packet
The first adhesive layer and the first conductive layer are included,
Wherein, sacrificial layer, the first film layer and the first metal layer are sequentially generated on substrate, comprising:
Spin coating and solidify expendable material film on substrate, generates the sacrificial layer；
Solidification generates the first film layer on the sacrificial layer；
The first adhesive layer and the first conductive layer are successively deposited on the first film layer, forms first metal
Layer.
For the manufacturing method of above-mentioned flexible interconnection line, in one possible implementation, the first adhesive layer packet
Include chromium or titanium, first conductive layer includes any one in gold, silver and copper, and the expendable material film is by polymethyl
(950PMMA A9 model) is made in sour methyl esters PMMA, and the first film layer is made of polyimides PI,
Wherein, first adhesive layer with a thickness of 5nm~20nm, first conductive layer with a thickness of 50nm~
300nm, the first film layer with a thickness of 3 μm~10 μm.
For the manufacturing method of above-mentioned flexible interconnection line, in one possible implementation, the mask layer includes the
Two metal layers, the second metal layer include the second adhesive layer and the second conductive layer,
Wherein, the deposition mask layer in second film layer, comprising:
The second adhesive layer and the second conductive layer are successively deposited in second film layer, forms second metal
Layer,
Wherein, second adhesive layer includes chromium or titanium, and second conductive layer includes any one in gold, silver and copper
Kind, second film layer is made of polyimides PI,
Wherein, second adhesive layer with a thickness of 5nm~10nm, second conductive layer with a thickness of 50nm~
100nm, second film layer with a thickness of 3 μm~10 μm.
For the manufacturing method of above-mentioned flexible interconnection line, in one possible implementation, metal is stated to described first
Layer performs etching processing, the first metal layer after forming etching, comprising:
The spin coating photoresist on the first metal layer forms the first photoresist layer；
First reticle pattern is transferred on first photoresist layer, the first exposure mask protective layer is formed；
Using the first exposure mask protective layer as exposure mask, processing is performed etching to the first metal layer, after being etched
The first metal layer；
Remove the first exposure mask protective layer.
For the manufacturing method of above-mentioned flexible interconnection line, in one possible implementation, etch the mask layer and
Second film layer, forms flexible interconnection structure to be transferred, comprising:
The spin coating photoresist on the mask layer generates the second photoresist layer；
Second reticle pattern is transferred on second photoresist layer, the second exposure mask protective layer is formed；
Using the second exposure mask protective layer as exposure mask, processing is performed etching to the mask layer, the exposure mask after being etched
Layer；
Remove the second exposure mask protective layer；
Using the mask layer after etching as exposure mask, second film layer is etched, flexible interconnection structure to be transferred is obtained.
For the manufacturing method of above-mentioned flexible interconnection line, in one possible implementation, the flexible interconnection line packet
The interconnecting piece and the connecting line between the interconnecting piece for including both ends,
Wherein, the shape of the connecting line includes snakelike, S-shaped, grid-shaped, star and any one of quincunx, described
The cross-sectional shape of interconnecting piece includes square, rectangle and any one of trapezoidal.
In the third aspect of the disclosure, a kind of measurement method of parameters of flexible interconnection line is provided, the method is for surveying
Measure the electrical parameter of above-mentioned flexible interconnection line, which comprises
The flexible interconnection line is stretched into preset length；
Measurement stretches the electrical parameter of the flexible interconnection line after preset length；
According to the electrical parameter, the conductive characteristic of the flexible interconnection line is determined,
Wherein, the electrical parameter includes resistance value and/or scattering parameter.
Flexible interconnection line and its manufacturing method and measurement method of parameters provided by the embodiment of the present disclosure, manufactured is soft
Property interconnection line includes flexible substrates and flexible interconnection structure, and flexible interconnection structure includes first be sequentially arranged on a flexible substrate
Film layer, the first metal layer and the second film layer, flexible interconnection structure include the interconnecting piece at both ends and are between interconnecting piece
Connecting line.In accordance with an embodiment of the present disclosure, the ductility and reliability that flexible interconnection line can be enhanced, to meet user
Use demand.
According to below with reference to the accompanying drawings to detailed description of illustrative embodiments, the other feature and aspect of the disclosure will become
It is clear.
Detailed description of the invention
Comprising in the description and constituting the attached drawing of part of specification and specification together illustrates the disclosure
Exemplary embodiment, feature and aspect, and for explaining the principles of this disclosure.
Fig. 1 a shows the cross-sectional view of the flexible interconnection line according to one embodiment of the disclosure；
Fig. 1 b shows the top view of the flexible interconnection line according to one embodiment of the disclosure；
Fig. 2 shows the flow charts according to the manufacturing method of the flexible interconnection line of one embodiment of the disclosure；
Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 3 d, Fig. 3 e and Fig. 3 f show the knot of the flexible interconnection line according to one embodiment of the disclosure
The schematic diagram of structure；
Fig. 4 a, Fig. 4 b and Fig. 4 c show the shape signal of the connecting line of the flexible interconnection line according to one embodiment of the disclosure
Figure；
Fig. 5 a, Fig. 5 b, Fig. 5 c, Fig. 5 d, Fig. 5 e, Fig. 5 f, Fig. 5 g, Fig. 5 h, Fig. 5 i, Fig. 5 j, Fig. 5 k, Fig. 5 l and Fig. 5 m are shown
According to the schematic diagram of the manufacturing process of the flexible interconnection line of one embodiment of the disclosure；
Fig. 6 shows the flow chart of the electrical parameter of the measurement flexible interconnection line according to one embodiment of the disclosure；
Fig. 7 a shows the schematic diagram of the resistance measurement device of the flexible interconnection line according to one embodiment of the disclosure；
Fig. 7 b shows the schematic diagram of the multiport circuit device of the flexible interconnection line provided according to one embodiment of the disclosure.
Specific embodiment
Various exemplary embodiments, feature and the aspect of the disclosure are described in detail below with reference to attached drawing.It is identical in attached drawing
Appended drawing reference indicate element functionally identical or similar.Although the various aspects of embodiment are shown in the attached drawings, remove
It non-specifically points out, it is not necessary to attached drawing drawn to scale.
Dedicated word " exemplary " means " being used as example, embodiment or illustrative " herein.Here as " exemplary "
Illustrated any embodiment should not necessarily be construed as preferred or advantageous over other embodiments.
In addition, giving numerous details in specific embodiment below to better illustrate the disclosure.
It will be appreciated by those skilled in the art that without certain details, the disclosure equally be can be implemented.In some instances, for
Method, means, element and circuit well known to those skilled in the art are not described in detail, in order to highlight the purport of the disclosure.
Fig. 1 a shows the cross-sectional view of the flexible interconnection line according to one embodiment of the disclosure；Fig. 1 b is shown according to the disclosure one
The top view of the flexible interconnection line of embodiment.As shown in Fig. 1 a and Fig. 1 b, flexible interconnection line includes:
Flexible substrates 18；
Flexible interconnection structure, including be sequentially arranged in flexible substrates 18 the first film layer 131, the first metal layer 1 and
Second film layer 132, flexible interconnection structure include the interconnecting piece 2 at both ends and the connecting line 3 between interconnecting piece 2,
Wherein, flexible substrates 18, the first film layer 131 and the second film layer 132 are fabricated from a flexible material.
In accordance with an embodiment of the present disclosure, the ductility and reliability that flexible interconnection line can be enhanced, to meet user
Use demand.
In the present embodiment, as shown in Figure 1a, flexible substrates 18, the first film layer 131 and the second film layer 132 are by soft
Made of property material.Flexible material can be dimethyl silicone polymer (polydimethylsiloxane, abbreviation PDMS), rubber
Glue, hydrogel (Hydrogel), polyimides (Polyimide, abbreviation PI), polyethylene terephthalate
(polyethylene.glycol terephthalate, abbreviation PET) etc. has polymer material flexible, and can also be can
Extension medical dressing.Those skilled in the art can according to actual needs select flexible material, and the disclosure does not make this
Limitation.
Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 3 d, Fig. 3 e and Fig. 3 f show the knot of the flexible interconnection line according to one embodiment of the disclosure
The schematic diagram of structure.The shape that Fig. 4 a, Fig. 4 b and Fig. 4 c show the connecting line of the flexible interconnection line according to one embodiment of the disclosure is shown
It is intended to.
In one possible implementation, as shown in Figure 1a, the first metal layer 1 of flexible interconnection structure may include first
Adhesive layer 14 and the first conductive layer 151.
In this implementation, it may include chromium or titanium in the first adhesive layer 14, can also be other gold with caking property
Belong to or nonmetallic materials, the first conductive layer 151 may include gold, silver and copper, can also be other conductive metal materials.
As shown in Fig. 3 a, Fig. 3 b, Fig. 3 c, Fig. 3 d, Fig. 3 e and Fig. 3 f, flexible interconnection structure includes interconnecting piece 2 and the company of being at both ends
Connecting line 3 between socket part 2.As shown in Fig. 4 a, Fig. 4 b and Fig. 4 c, the shape of connecting line 3 may include snakelike, S-shaped, grid-shaped,
Star and quincunx can also be that other are easy to the shape of flexible interconnection line extension.The cross section (not shown) shape of interconnecting piece 2
Including square, rectangle and it is trapezoidal in it is any.Those skilled in the art can select the first adhesive layer according to actual needs
The material of material, the first conductive layer can be set according to actual needs the shape of connecting line and the shape of connection cross section, this
It discloses to this with no restriction.In this way, it can be improved the ductility of flexible interconnection line.
The manufacturing process of flexible interconnection line is illustrated below.
Fig. 2 shows the flow charts according to the manufacturing method of the flexible interconnection line of one embodiment of the disclosure.As described in Figure 2, should
Method may include step S11 to step S17.
In step s 11, sacrificial layer, the first film layer and the first metal layer are sequentially generated on substrate；
In step s 12, processing is performed etching to the first metal layer, the first metal layer after forming etching；
In step s 13, after etching the second film is generated on the expose portion of the first metal layer and the first film layer
Layer；
In step S14, the deposition mask layer in the second film layer；
In step S15, etching mask layer and the second film layer form flexible interconnection structure to be transferred；
In step s 16, flexible interconnection structure to be transferred is transferred in flexible substrates, the flexibility after forming transfer is mutually
Link structure；
In step S17, the first film layer of the flexible interconnection structure after etching transfer simultaneously removes the mask layer after etching,
Obtain flexible interconnection line.
In the present embodiment, substrate can be the semiconductor materials such as silicon, silica, can also use other semiconductor crystals
Material can according to actual needs select the material of substrate as substrate, those skilled in the art, the disclosure to this not
It is restricted.
In accordance with an embodiment of the present disclosure, sacrificial layer, the first film layer and the first metal layer can be sequentially generated on substrate；
Processing is performed etching to the first metal layer, the first metal layer after forming etching；The first metal layer and first after etching is thin
The second film layer is generated on the expose portion of film layer；The deposition mask layer in the second film layer；Etching mask layer and the second film
Layer, forms flexible interconnection structure to be transferred；Flexible interconnection structure to be transferred is transferred in flexible substrates, after forming transfer
Flexible interconnection structure；The first film layer of flexible interconnection structure after etching transfer simultaneously removes the mask layer after etching, obtains
Flexible interconnection line.The flexible interconnection line made by this method enhances the ductility and reliability of flexible interconnection line, from
And meet the use demand of user.
In one possible implementation, the first metal layer may include the first adhesive layer and the first conductive layer.Step
S11 may include:
Spin coating and solidify expendable material film on substrate, generates sacrificial layer；
Solidification generates the first film layer on sacrificial layer；
The first adhesive layer and the first conductive layer are successively deposited on the first film layer, forms the first metal layer.
In this implementation, expendable material can be polymethyl methacrylate (Polymethyl
Methacrylate, abbreviation PMMA), it can also be other corrosion resistant organic materials.Sol evenning machine can be used in the one side of substrate
Spin-on sacrificial material is formed expendable material film, and is solidified by the way of heating to expendable material film, is formed and is sacrificed
Layer.For example, spin coating 950PMMA A9 on a silicon substrate, when spin coating, controllable sol evenning machine was first with 600 revolutions per seconds of speed spin coating
PMMA, spin-coating time are 6 seconds, and then with 3000 revolutions per seconds of speed spin coating PMMA, spin-coating time is 30 seconds, so that PMMA film
With a thickness of 1.5 μm.PMMA film after spin coating can be solidified by the way of heating, first time heating temperature can be
110 DEG C, the time can be 5 minutes, and second of heating temperature can be 150 DEG C, and the time can be 5 minutes, and third time heats temperature
Degree can be 180 DEG C, and the time can be 10 minutes.PMMA film after solidification can be stood 1 hour, to reduce in PMMA film
Stress forms sacrificial layer.Can by way of selection to expendable material, spin-on sacrificial material, solidify expendable material film
The time of mode and standing is configured, so that the sacrificial layer formed can satisfy the demand of subsequent technique, the disclosure pair
This is with no restriction.
In this implementation, the material of the first film layer can be polyimides (Polyimide, abbreviation PI), may be used also
To be other flexible materials, sol evenning machine spin coating the first film layer material can be used on sacrificial layer, and using the side being heating and curing
Formula forms the first film layer.For example, can on sacrificial layer spin coating polyamic acid (PAA), controllable sol evenning machine is first with 800 when spin coating
Revolutions per second speed spin coating PAA, spin-coating time is 6 seconds, and then with 4000 revolutions per seconds of speed spin coating PAA, spin-coating time is 40 seconds,
So that PAA film with a thickness of 6 μm.PAA film after spin coating can be solidified by the way of heating, heat temperature for the first time
Degree can be 80 DEG C, and the time can be 20 minutes, and second of heating temperature can be 120 DEG C, and the time can be 30 minutes, third
Secondary heating temperature can be 150 DEG C, and the time can be 20 minutes, and the 4th time heating temperature can be 180 DEG C, and the time can be
50min, the PAA film after being heating and curing form PI film.PI film after solidification can be stood 1 hour, reduced in PI film
Stress forms the first film layer.Those skilled in the art can be by selecting the first film layer material, and setting generates the first film layer
The mode of material, the mode for solidifying the first film layer material and the time for standing PI film, so that the first film layer generated
Meet the needs of subsequent technique, the disclosure to this with no restriction.
In this implementation, the mode of vapor deposition may include electron beam evaporation plating (Electron Beam
Evaporation), vacuum evaporation, sputter coating, arc-plasma plating, ion plating equipment molecular beam epitaxy etc., can be according to reality
Border needs the mode of selective evaporation the first adhesive layer and the first conductive layer, so that the first adhesive layer and the first conductive layer of vapor deposition can
To meet the needs of subsequent technique.First adhesive layer includes chromium or titanium, can also be other metals or non-gold with caking property
Belong to material, thickness can be 5nm~20nm, and the first conductive layer includes that gold, silver and copper are any, can also be that other have conduction
The metal material of property, thickness can be 50nm~300nm, and the thickness of the first film layer can be 3 μm~10 μm, and the disclosure is to this
With no restriction.
In one possible implementation, processing is performed etching to the first metal layer in step s 12, after forming etching
The first metal layer, it may include:
Spin coating photoresist on the first metal layer forms the first photoresist layer；
First reticle pattern is transferred on the first photoresist layer, the first exposure mask protective layer is formed；
Using the first exposure mask protective layer as exposure mask, processing is performed etching to the first metal layer, the first metal after being etched
Layer；
Remove the first exposure mask protective layer.
In this implementation, sol evenning machine spin coating photoresist on the first metal layer can be used, form the first photoresist layer.
Those skilled in the art can be configured by revolving speed to sol evenning machine and spin-coating time, so as to obtain the thickness of the first photoresist layer
Degree can satisfy subsequent technique demand, the disclosure to this with no restriction.
In this implementation, the first prefabricated reticle pattern can be set according to flexible interconnection wire shaped and structure
It sets, dry etching, wet etching, photoetching and the lithographic techniques such as photosensitive can be used, the first prefabricated reticle pattern is transferred to
On one photoresist layer, the disclosure to this with no restriction.
In this implementation, dry etching, wet etching, photoetching and the lithographic techniques such as photosensitive can be used to the first metal
Layer performs etching processing, the disclosure to this with no restriction.
In this implementation, can using acetone remove the first exposure mask protective layer, the disclosure to this with no restriction.
For example, the first photoresist layer can be formed, with prefabricated by sol evenning machine spin coating photoresist on the first metal layer
The first mask plate be exposure mask, the first photoresist layer is exposed by radiation sources such as mercury-arc lamps, by the first reticle pattern
It is transferred on the first photoresist layer, forms the first exposure mask protective layer.Using the first exposure mask protective layer as exposure mask, carved using reactive ion
The dry etchings such as erosion (Reactive Ion Etching, abbreviation RIE) or wet etching technique perform etching the first metal layer
Processing, is transferred to the pattern of the first exposure mask protective layer on the first metal layer, the first metal layer after being etched finally uses
Acetone removes the first exposure mask protective layer, and those skilled in the art can according to actual needs be handled the first metal layer, this public affairs
It opens to this with no restriction.
In one possible implementation, in step s 13, the first metal layer after etching and the first film layer
The second film layer is generated on expose portion.
In this implementation, the material of the second film layer can be polyimides (Polyimide, abbreviation PI), may be used also
To be other flexible materials, can the first metal layer after etching and the first film layer expose portion using sol evenning machine spin coating the
Two film layer materials, and the second film layer is formed by the way of being heating and curing.For example, can the first metal layer after etching and
The expose portion spin coating PI film of the first film layer, and solidify PI film by the way of heating, the second film layer of formation, second
The thickness of film layer can be 3 μm~10 μm.Those skilled in the art can be according to actual needs to the second film layer generation side
Formula and thickness are configured, the disclosure to this with no restriction.
In one possible implementation, mask layer includes second metal layer, and second metal layer includes the second adhesive layer
And second conductive layer.In step S14, the deposition mask layer in the second film layer, it may include: it is successively steamed in the second film layer
The second adhesive layer and the second conductive layer are plated, second metal layer is formed.
In this implementation, the second adhesive layer includes chromium or titanium, can also be other metals or non-with caking property
Metal material, the thickness of the second adhesive layer can be 5nm~10nm, and the second conductive layer includes any one of gold, silver and copper, go back
Can be other conductive metal materials, the thickness of the second conductive layer can be 50nm~100nm, the disclosure to this not
It is restricted.Electron beam evaporation plating (Electron Beam Evaporation), vacuum evaporation, sputter coating, electric arc etc. can be used
The second adhesive layer and second is successively deposited in the vapor depositions modes such as gas ions plating, ion plating equipment molecular beam epitaxy in the second film layer
Conductive layer, the disclosure to the mode of vapor deposition with no restriction.
By the second adhesive layer and the second conductive layer being deposited in the second film layer, as covering for the second film layer of etching
Film layer, wherein the material different from the first adhesive layer may be selected in the second adhesive layer, causes to avoid in etching technics to first
The injury of adhesive layer.The corrosion-resistant materials such as gold may be selected in second conductive layer, to reduce the influence of lateral erosion in etch step, second
Conductive layer can also be other conductive and corrosion resistant metal materials, the disclosure to this with no restriction.
In one possible implementation, in step S15, etching mask layer and the second film layer are formed to be transferred
Flexible interconnection structure, it may include:
The spin coating photoresist on mask layer generates the second photoresist layer；
Second reticle pattern is transferred on the second photoresist layer, the second exposure mask protective layer is formed；
Using the second exposure mask protective layer as exposure mask, processing is performed etching to mask layer, the mask layer after being etched；
Remove the second exposure mask protective layer；
Using the mask layer after etching as exposure mask, the second film layer is etched, flexible interconnection structure to be transferred is obtained.
In this implementation, sol evenning machine spin coating photoresist on mask layer can be used, form the second photoresist layer.It can lead to
The revolving speed and spin-coating time of control sol evenning machine are crossed, so that the thickness of the second photoresist layer can satisfy the demand of subsequent technique, this
It discloses to this with no restriction.
In this implementation, prefabricated second mask pattern can be set according to the shape and structure of flexible interconnection line
It sets, the dry etchings such as photoetching, photosensitive or wet etching technique can be used by prefabricated second mask pattern and be transferred to the second photoetching
On glue-line, the disclosure to this with no restriction.
In this implementation, using the second exposure mask protective layer as exposure mask, processing is performed etching to mask layer, after being etched
Mask layer.Processing can be performed etching to mask layer using the dry etchings such as photoetching, photosensitive or wet etching, the disclosure is to this
With no restriction.
In this implementation, can be used acetone remove the second exposure mask protective layer, the disclosure to this with no restriction.
In this implementation, using the mask layer after etching as exposure mask, reactive ion etching (Reactive Ion can be used
Etching, abbreviation RIE) etc. dry etchings or wet etching processing is performed etching to the second film layer, obtain flexible interconnection knot
Structure, the disclosure to this with no restriction.Processing can be performed etching to the second film layer by control etch period and etching speed, made
The second film layer after etching can satisfy subsequent technique demand, avoid the first film layer that will be exposed and the second film layer complete
Full etching falls, otherwise subsequent to be transferred.
In one possible implementation, in step s 16, flexible interconnection structure to be transferred is transferred to flexible base
Flexible interconnection structure on bottom, after forming transfer.
In this implementation, it can remove the sacrificial layer in flexible interconnection structure to be transferred, so that flexible interconnection structure
It is separated with substrate.For example, flexible interconnection structure to be transferred is placed in acetone soln, so that sacrificial layer PMMA dissolves, then
Flexible interconnection structure is adhered in flexible substrates, the flexible interconnection structure after being transferred.
Wherein, flexible substrates can be dimethyl silicone polymer (polydimethylsiloxane, abbreviation PDMS), rubber
Glue, hydrogel (Hydrogel), polyimides (Polyimide, abbreviation PI), polyethylene terephthalate
(polyethylene.glycol terephthalate, abbreviation PET) etc. has polymer material flexible, and can also be can
Extension medical dressing, the disclosure to this with no restriction.
In one possible implementation, in step S17, the first film of the flexible interconnection structure after etching transfer
Layer simultaneously removes the mask layer after etching, obtains flexible interconnection line.
In this implementation, the dry method such as reactive ion etching (Reactive Ion Etching, abbreviation RIE) can be used
Etching or wet etching perform etching processing to the first film layer in flexible interconnection structure, the disclosure to this with no restriction.It can
To obtain flexible interconnection using the mask layer after etching in the methods of chemical attack, electrochemical corrosion removal flexible interconnection structure
Line, the disclosure to this with no restriction.
In one possible implementation, flexible interconnection line includes the interconnecting piece at both ends and between interconnecting piece
Connecting line.
In this implementation, as shown in Figure 1 b, flexible interconnection line includes the interconnecting piece 2 at both ends and in interconnecting piece 2
Between connecting line 3.As shown in Fig. 4 a, Fig. 4 b and Fig. 4 c, the shape of connecting line 3 includes snakelike, S-shaped, grid-shaped, star and plum
Any one of flower-shape, can also be other be easy to extend shape, the disclosure to this with no restriction.The cross section of interconnecting piece 2
(not shown) shape includes square, rectangle and any one of trapezoidal, can also be that other are adapted to the shape of practical application,
The disclosure to this with no restriction.
Using example
Below in conjunction with " production flexible interconnection line " type application scenarios as an example, provide according to the embodiment of the present disclosure
Using example, in order to understand flexible interconnection line manufacturing method process.It will be understood by those skilled in the art that following application is shown
Example is not construed as the limitation to the embodiment of the present disclosure merely for the sake of the purpose for understanding the embodiment of the present disclosure.
Fig. 5 a, Fig. 5 b, Fig. 5 c, Fig. 5 d, Fig. 5 e, Fig. 5 f, Fig. 5 g, Fig. 5 h, Fig. 5 i, Fig. 5 j, Fig. 5 k, Fig. 5 l and Fig. 5 m are shown
According to the schematic diagram of the manufacturing process of the flexible interconnection line of one embodiment of the disclosure.The process for manufacturing flexible interconnection line is as follows:
The first step, as shown in Figure 5 a, the spin coating 950PMMA A9 on silicon substrate 11, control sol evenning machine is first with 600 when spin coating
Revolutions per second speed spin coating PMMA, spin-coating time be 6 seconds, then with 3000 revolutions per seconds of speed spin coating PMMA, spin-coating time 30
Second so that PMMA film with a thickness of 1.5 μm.PMMA film after spin coating is heating and curing, first time heating temperature is
110 DEG C, heating time is 5 minutes, and second of heating temperature is 150 DEG C, and heating time is 5 minutes, and third time heating temperature is
180 DEG C, heating time is 10 minutes.PMMA film after solidification is stood 1 hour, to reduce the stress in PMMA film, is formed
Sacrificial layer 12.
Second step, as shown in Figure 5 b, the spin coating PAA on sacrificial layer 12, control sol evenning machine is first with 800 revolutions per seconds when spin coating
Speed spin coating PAA, spin-coating time are 6 seconds, and then with 4000 revolutions per seconds of speed spin coating PAA, spin-coating time is 40 seconds, so that PAA
Film with a thickness of 6 μm.PAA film after spin coating is heating and curing, first time heating temperature is 80 DEG C, and heating time is
20 minutes, second of heating temperature was 120 DEG C, and heating time is 30 minutes, and third time heating temperature is 150 DEG C, heating time
It is 20 minutes, the 4th time heating temperature is 180 DEG C, and heating time is 50 minutes, and it is thin that the PAA film after being heating and curing forms PI
Film.PI film after solidification is stood 1 hour, reduces the stress in PI film, forms the first film layer 131.
Third step sequentially generates the using e-beam evaporation (E-Beam) on the first film layer 131 as shown in Figure 5 c
One metal layer, the first metal layer include the first adhesive layer 14 and the first conductive layer 151, and the first adhesive layer is metallic chromium layer, thickness
For 10nm, the first conductive layer is layer gold, with a thickness of 150nm.
4th step using sol evenning machine spin coating photoresist on the first metal layer, forms the first photoresist as fig 5d
Layer.Using the first prefabricated mask plate as exposure mask, the first photoresist layer is exposed by mercury arc light irradiation, by the first mask plate
Pattern is transferred on the first photoresist layer, forms the first exposure mask protective layer 161.
5th step is as depicted in fig. 5e exposure mask with the first exposure mask protective layer 161, using RIE lithographic technique to the first metal
Layer performs etching, so that the pattern of the first exposure mask protective layer 161 is transferred on the first metal layer, the first metal after being etched
Layer, the first metal layer after etching includes the first adhesive layer 14 ' after etching and the first conductive layer 151 ' after etching.
6th step, as shown in figure 5f, after removing the first exposure mask protective layer 161 using acetone, the first metal after etching
The second film layer 132 is generated on the expose portion of layer and the first film layer 131.It can be in the first metal layer and the first film layer
Spin coating PAA film and be heating and curing on 131 expose portion, form PI film, PI film with a thickness of 6 μm.
7th step generates mask layer using electron beam evaporation plating (E-beam) in the second film layer 132 as shown in fig. 5g,
Mask layer includes second metal layer, and second metal layer includes the second adhesive layer 17 and the second conductive layer 152.Second adhesive layer is gold
Belong to titanium layer, with a thickness of 10nm, the second conductive layer is layer gold, with a thickness of 100nm.Second conductive layer 152 can reduce in etch step
The influence of lateral erosion.
8th step, as shown in figure 5h, using sol evenning machine in second metal layer spin coating photoresist, formed the second photoresist
Layer.Using the second prefabricated mask plate as exposure mask, the second photoresist layer is exposed by mercury arc light irradiation, by the second mask plate
Pattern is transferred on the second photoresist layer, forms the second exposure mask protective layer 162.
9th step is as shown in figure 5i exposure mask with the second exposure mask protective layer 162, using RIE lithographic technique to mask layer into
Row etching, so that the pattern of the second exposure mask protective layer 162 is transferred on mask layer, mask layer after being etched, covering after etching
Film layer includes the second adhesive layer 17 ' after second metal layer 152 ' and etching after etching, uses acetone to remove the second exposure mask and protects
Sheath.
Tenth step using the mask layer after etching as exposure mask, etches the second film using RIE lithographic technique as shown in figure 5j
Layer 132, obtains flexible interconnection structure 4 to be transferred, and flexible interconnection structure 4 to be transferred includes the second conductive layer after etching
152 ', the second film layer 132 ' after the second adhesive layer 17 ', etching after etching, the first conductive layer 151 ' after etching, etching
The first adhesive layer 14 ' and the first film layer 131 afterwards.
Flexible interconnection structure 4 to be transferred is placed in acetone soln by the 11st step as shown in figure 5k, so that sacrificing
Layer 12 dissolves, then flexible interconnection structure is adhered in flexible substrates 18, the flexible interconnection structure after being transferred.
12nd step, as shown in Fig. 5 l, using RIE lithographic technique to the first film in the flexible interconnection structure after transfer
Layer performs etching processing, the first film layer 131 ' after being etched.
13rd step, as shown in figure 5m, the mask layer after corrosion etching obtains flexible interconnection line.
The parameter measurement process of flexible interconnection line is illustrated below.
Fig. 6 shows the flow chart of the electrical parameter of the measurement flexible interconnection line provided according to one embodiment of the disclosure.Such as Fig. 6
Shown, measurement method includes step S21 to step S23:
In the step s 21, flexible interconnection line is stretched into preset length；
In step S22, measurement stretches the electrical parameter of the flexible interconnection line after preset length；
In step S23, according to electrical parameter, the conductive characteristic of flexible interconnection line is determined,
Wherein, electrical parameter includes resistance value and/or scattering parameter.
In the present embodiment, flexible interconnection line is stretched into preset length, measurement stretches the flexible interconnection line after preset length
Electrical parameter the conductive characteristic of flexible interconnection line is determined according to electrical parameter.By the electricity ginseng for measuring flexible interconnection line
Number, provides reliable foundation for extending flexible electronic device performance and layout.
In one possible implementation, in the step s 21, flexible interconnection line is stretched to preset length.
In this implementation, the two sides of flexible interconnection line need to be connected with stretching-machine simultaneously, and flexible interconnection line is stretched
To preset length, flexible interconnection line can also be stretched using other devices or method, the disclosure to this with no restriction.
In one possible implementation, in step S22, measurement stretches the electricity of the flexible interconnection line after preset length
Learn parameter.
Fig. 7 a shows the schematic diagram of the resistance measurement device of the flexible interconnection line provided according to one embodiment of the disclosure；Figure
7b shows the schematic diagram of the multiport circuit device of the flexible interconnection line provided according to one embodiment of the disclosure.
It in this implementation, as shown in Figure 7a, can be by flexible interconnection line 21 when measuring the resistance value of flexible interconnection line
Two sides simultaneously be connected with stretching-machine 22, can be used conductive silver glue flexible interconnection line 21 is connected with one end of metal wire 23,
The other end of metal wire 23 is connected with resistance meter 24 respectively, to realize the resistance of flexible interconnection line during stretching
On-line measurement, metal wire can be any in gold, silver and copper, can also be other conductive metal wires, the disclosure
With no restriction to this.
It in this implementation, as shown in Figure 7b, can be by flexible interconnection line when measuring the scattering parameter of flexible interconnection line
21 two sides are connected with stretching-machine 22 simultaneously, and patchcord 25 connects respectively for the two sides of flexible interconnection line 21, patchcord 25 it is another
Outer one end is welded with 26 phase of pcb board respectively, and pcb board 26 and one end of connector 27 are mutually welded, 27 other end of adapter and network
Analyzer 28 is to realize the test of the scattering parameter of flexible interconnection line during stretching.To reduce loss, can will extend mutual
After the both ends of line are mutually Nian Jie with patchcord 25 respectively, 25 both ends of patchcord are directly welded with 27 phase of connector, and the disclosure is to this
With no restriction.
It should be noted that although described using above-described embodiment as example flexible interconnection line and its manufacturing method and
Measurement method of parameters, it is understood by one of ordinary skill in the art that the disclosure answer it is without being limited thereto.In fact, user completely can basis
Personal preference and/or practical application scene flexibly set each step, as long as meeting the technical solution of the disclosure.
In accordance with an embodiment of the present disclosure, flexible interconnection line includes flexible substrates and flexible interconnection structure, flexible interconnection structure
Including the first film layer, the first metal layer and the second film layer being sequentially arranged in the flexible substrates, flexible interconnection structure
Interconnecting piece including both ends and the connecting line between the interconnecting piece.Flexible interconnection line have very strong ductility and
Manufactured flexible interconnection line is used in flexible electronic device, the ductility of flexible electronic device can be enhanced by reliability
And reliability.
The presently disclosed embodiments is described above, above description is exemplary, and non-exclusive, and
It is not limited to disclosed each embodiment.Without departing from the scope and spirit of illustrated each embodiment, for this skill
Many modifications and changes are obvious for the those of ordinary skill in art field.The selection of term used herein, purport
In principle, the practical application or to the technological improvement in market for best explaining each embodiment, or make the art its
Its those of ordinary skill can understand each embodiment disclosed herein.
Claims (10)
1. a kind of flexible interconnection line, which is characterized in that the flexible interconnection line includes:
Flexible substrates；
Flexible interconnection structure, including the first film layer, the first metal layer and second thin being sequentially arranged in the flexible substrates
Film layer, the interconnecting piece and the connecting line between the interconnecting piece that the flexible interconnection structure includes both ends,
Wherein, the flexible substrates, the first film layer and second film layer are fabricated from a flexible material.
2. flexible interconnection line according to claim 1, which is characterized in that the first metal layer packet of the flexible interconnection structure
Include the first adhesive layer and the first conductive layer, first adhesive layer includes chromium or titanium, first conductive layer include gold, silver and
Any one in copper,
Wherein, the shape of the connecting line includes snakelike, S-shaped, grid-shaped, star and any one of quincunx.
3. a kind of manufacturing method of flexible interconnection line, which is characterized in that the described method includes:
Sacrificial layer, the first film layer and the first metal layer are sequentially generated on substrate；
Processing is performed etching to the first metal layer, the first metal layer after forming etching；
The second film layer is generated on the expose portion of the first metal layer and the first film layer after the etching；
The deposition mask layer in second film layer；
The mask layer and second film layer are etched, flexible interconnection structure to be transferred is formed；
The flexible interconnection structure to be transferred is transferred in flexible substrates, the flexible interconnection structure after forming transfer；
The first film layer of flexible interconnection structure after etching the transfer simultaneously removes the mask layer after etching, obtains flexible interconnection
Line.
4. according to the method described in claim 3, it is characterized in that, the first metal layer includes the first adhesive layer and first
Conductive layer,
Wherein, sacrificial layer, the first film layer and the first metal layer are sequentially generated on substrate, comprising:
Spin coating and solidify expendable material film on substrate, generates the sacrificial layer；
Solidification generates the first film layer on the sacrificial layer；
The first adhesive layer and the first conductive layer are successively deposited on the first film layer, forms the first metal layer.
5. according to the method described in claim 4, described first leads it is characterized in that, first adhesive layer includes chromium or titanium
Electric layer includes any one in gold, silver and copper, and the expendable material film is made of polymetylmethacrylate, described
The first film layer is made of polyimides PI,
Wherein, first adhesive layer with a thickness of 5nm~20nm, first conductive layer with a thickness of 50nm~300nm, institute
State the first film layer with a thickness of 3 μm~10 μm.
6. according to the method described in claim 3, it is characterized in that, the mask layer includes second metal layer, second gold medal
Belong to layer and include the second adhesive layer and the second conductive layer,
Wherein, the deposition mask layer in second film layer, comprising:
The second adhesive layer and the second conductive layer are successively deposited in second film layer, forms the second metal layer,
Wherein, second adhesive layer includes chromium or titanium, and second conductive layer includes any one in gold, silver and copper, institute
The second film layer is stated to be made of polyimides PI,
Wherein, second adhesive layer with a thickness of 5nm~10nm, second conductive layer with a thickness of 50nm~100nm, institute
State the second film layer with a thickness of 3 μm~10 μm.
7. according to the method described in claim 3, formation is carved it is characterized in that, performing etching processing to the first metal layer
The first metal layer after erosion, comprising:
The spin coating photoresist on the first metal layer forms the first photoresist layer；
First reticle pattern is transferred on first photoresist layer, the first exposure mask protective layer is formed；
Using the first exposure mask protective layer as exposure mask, processing is performed etching to the first metal layer, first after being etched
Metal layer；
Remove the first exposure mask protective layer.
8. according to the method described in claim 3, being formed it is characterized in that, etch the mask layer and second film layer
Flexible interconnection structure to be transferred, comprising:
The spin coating photoresist on the mask layer generates the second photoresist layer；
Second reticle pattern is transferred on second photoresist layer, the second exposure mask protective layer is formed；
Using the second exposure mask protective layer as exposure mask, processing is performed etching to the mask layer, the mask layer after being etched；
Remove the second exposure mask protective layer；
Using the mask layer after etching as exposure mask, second film layer is etched, flexible interconnection structure to be transferred is obtained.
9. according to the method described in claim 3, it is characterized in that, the flexible interconnection line includes interconnecting piece and the place at both ends
Connecting line between the interconnecting piece,
Wherein, the shape of the connecting line includes snakelike, S-shaped, grid-shaped, star and any one of quincunx, the connection
The cross-sectional shape in portion includes square, rectangle and any one of trapezoidal.
10. a kind of measurement method of parameters of flexible interconnection line, which is characterized in that the method is for measuring according to claim 1
Or the electrical parameter of flexible interconnection line described in 2, which comprises
The flexible interconnection line is stretched into preset length；
Measurement stretches the electrical parameter of the flexible interconnection line after preset length；
According to the electrical parameter, the conductive characteristic of the flexible interconnection line is determined,
Wherein, the electrical parameter includes resistance value and/or scattering parameter.
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Application publication date: 20190115 |