CN104555890B - Self-supporting three-dimension device - Google Patents
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Abstract
The invention discloses a kind of self-supporting three-dimension device, including: there is the substrate of window；The dielectric thin film of self-supporting, this dielectric thin film is formed in substrate and covers window, and this dielectric thin film has: extend, one, the main part extended in plane；With at least one suspending part cut out from main part, suspending part becomes local to be connected with main part and deviates from the extension plane of main part；The device cell formed on each suspending part, this device cell has predetermined pattern.The present invention gone out to have the micro-nano device of three dimensional structure and mutually insulated in the dielectric film preparation of self-supporting, it is to avoid the problem that there is short circuit when micro-nano device adds electric field excitation outside between unit.Additionally, the self-supporting three-dimension device of the present invention can be produced in batches, thus obtaining the self-supporting three-dimension device array with identical or different micro-nano functional structure.
Description
Technical field
The present invention relates to three-dimensional micro-nano device technical field, particularly relate to a kind of self-supporting three-dimension device.
Background technology
Along with the development of microelectronic technique, device is also incrementally increasing towards the difficulty of miniaturization, and the structure of three-dimension device becomes the important channel improving device integration density undoubtedly.Therefore, the manufacture method finding the controlled space micro nano structure of a kind of three-dimensional has caused the concern of more and more people.Someone utilizes ion beam irradiation to control the thin film deformation technique to prepare three dimensional structure at present, it is by utilizing focused-ion-beam lithography to go out cantilever design on the silverskin of self-supporting, then again with ion beam irradiation make silver cantilever deform upon, it is thus achieved that can in space the three-dimensional metal structure of free orientation.This three-dimensional metal structure can be used for the design of photoelectric device, as based on surface etc. from the detector of primitive, wide broadband radiation manipulator, and D S QUID magnetic detector etc..
But what above-mentioned preparation technology obtained have, and the micro-nano device of three dimensional structure is all using large-area metal thin film as carrier, and all of three-dimensional micro-nano device is all connected with base metal thin film, cause that these have the micro-nano device of three dimensional structure and require three-dimensional micro-nano device mutually insulated at some or require that some part of each micro-nano device can not cannot popularization and application by the field of metal short circuit.
Summary of the invention
The invention aims to provide a kind of self-supporting three-dimension device, this self-supporting three-dimension device is formed on the dielectric thin film of self-supporting and is insulated from.
To achieve these goals, according to an aspect of the invention, it is provided a kind of self-supporting three-dimension device, including: there is the substrate of window；The dielectric thin film of self-supporting, this dielectric thin film is formed in substrate and covers window, and this dielectric thin film has: extend, one, the main part extended in plane；With at least one suspending part cut out from main part, suspending part becomes local to be connected with main part and deviates from the extension plane of main part；The device cell formed on each suspending part, this device cell has predetermined pattern.
Further, between the suspending part of device cell and dielectric thin film, identically shaped with device cell and size metal level it is formed with.
Further, the material of metal level is selected to the flexural deformation when ion irradiation.
Further, the material forming metal level is chromium, gold or copper.
Further, the thickness of metal level is 3～10nm.
Further, suspending part is to make it bend to the direction away from dielectric thin film by ion beam irradiation to obtain；Preferably, suspending part is rectangle.
Further, device cell is formed directly on the suspending part of dielectric thin film.
Further, suspending part is connected along continuous print straight line with main part.
Further, the predetermined pattern of device cell is " u "-shaped or triangular structure.
Further, suspending part is overlapping with device cell.
According to another aspect of the present invention, it is provided that a kind of method preparing self-supporting three-dimension device, including step S1: providing the dielectric thin film of a self-supporting, this dielectric thin film has the upper surface of substantially flat；Step S2: form conductive layer on the upper surface of dielectric thin film and at least one has the device cell of predetermined pattern, to form a lamination layer structure；Step S3: lamination layer structure is cut, becomes locally-attached suspending part obtaining at least one with lamination layer structure；Wherein, each suspending part has a device cell of correspondence；Step S4: adopt ion beam irradiation suspending part, so that conductive layer deforms, thus driving suspending part to bend to the direction away from dielectric thin film with the local connecting portion of lamination layer structure around it；Step S5: remove at least some of conductive layer, obtains the self-supporting three-dimension device of insulation.
Further, in step s 2, the upper surface of dielectric thin film forms multiple device cell；Further, in step s 5, partial electroconductive layer is removed, so that insulated from each other between any two device cell.
Further, in step s 5, conductive layer at most only retains the part corresponding with the predetermined pattern of device cell.
Further, in step s 5, conductive layer is entirely removed.
Further, in step s 2: on the upper surface of dielectric thin film, form conductive layer, then form device cell on the electrically conductive；Or, the upper surface of dielectric thin film is formed device cell, on the upper surface of dielectric thin film, then forms conductive layer, so that device cell is between dielectric thin film and conductive layer.
Further, suspending part is connected along continuous print straight line with lamination layer structure.
Further, conductive layer is metal material；Preferably, the material of formation conductive layer is selected from one or more in chromium, gold and copper；Alternatively, the thickness of conductive layer is 3～10nm.
Further, the material of formation device cell is selected from one or more in gold, silver, copper, aluminum, nickel, titanium, chromium, ITO, zinc oxide, titanium oxide and Afluon (Asta)；Alternatively, dielectric thin film is silicon nitride.
Further, the method preparing self-supporting three-dimension device also includes: have the substrate of window；Dielectric thin film is formed in substrate and covers window.
Application technical scheme, inventor creatively adopts the micro-nano dielectric thin film of self-supporting as substrate, it is deposited with conductive metal layer thereon, and in conjunction with micro-nano metallic pattern preparation technology, conductive metal layer forms one or more device cell with predetermined pattern.Obtaining suspending part by this device cell being carried out cutting, adopting electron beam irradiation suspending part to induce it to occur bending and deformation around the junction, local with dielectric thin film so that suspending part forms the micro-nano device with three dimensional structure on dielectric thin film.Remove conductive metal layer, expose insulating medium layer, thus gone out to have the micro-nano device of three dimensional structure and mutually insulated first in the dielectric film preparation of self-supporting.
Employing technical scheme has the effect that
1) adopt the dielectric thin film of self-supporting as substrate, after coating conductive metal layer, carry out the micro-nano technology of dielectric thin film in its surface.If being not coated by conductive layer, the electric charge inciding the electronics on dielectric film or ion can not be conducted in time, and the electric charge accumulated gradually can make Subsequent electronic or ion offset, it is impossible to is pin-pointed to desired location, thus reducing machining accuracy.Therefore, partial charge can be prevented effectively from by conductive coating and accumulate the figure deformation caused and the problem of machining accuracy reduction, and after removing conductive metal layer, not affect the insulation characterisitic between the single micro-nano device or multiple micro-nano device with three dimensional structure.
2) present invention adopts ion beam irradiation so that controlled three-dimensional deformation occurs the suspending part in dielectric thin film planar, it is achieved thereby that the 3 D tropism of the metallic pattern carried is controlled.Preparation method provided by the present invention not only technique is flexible, controllability good, cost is low and can large area prepare, and the structure of predetermined pattern, pattern, size and cycle on three-dimensional micro-nano device can be designed in preparation process, thus preparing, material category is more, function is unique and baroque self-supporting three-dimension device, and the application for micro-nano device provides new technique.
3) method of the present invention can prepare the self-supporting three-dimension device with three dimensional structure and mutually insulated, it is to avoid the problem that there is short circuit when it adds electric field excitation outside between unit.Additionally, method provided by the present invention can be produced in batches, thus obtaining the three dimensional structure device array with identical or different micro-nano functional structure.
According to below in conjunction with the accompanying drawing detailed description to the specific embodiment of the invention, those skilled in the art will understand the above-mentioned of the present invention and other purposes, advantage and feature more.
Accompanying drawing explanation
Some specific embodiments of the present invention are hereinafter described in detail with reference to the accompanying drawings by way of example, and not by way of limitation.Accompanying drawing labelling identical in accompanying drawing denotes same or similar parts or part.It should be appreciated by those skilled in the art that what these accompanying drawings were not necessarily drawn to scale.In accompanying drawing:
Fig. 1 is the process chart of the self-supporting device preparing mutually insulated in one embodiment of the invention；
Fig. 2 is the structural representation of the micro-nano device with " u "-shaped predetermined pattern prepared according to the technological process in Fig. 1；And
Fig. 3 is the electron scanning micrograph of the micro-nano device with " u "-shaped predetermined pattern prepared in one embodiment of the invention.
Detailed description of the invention
As it is shown in figure 1, the invention provides a kind of method preparing self-supporting three-dimension device, including: step S1: the self-supporting dielectric thin film 10 of a upper surface 11 with substantially flat is provided.The step of Fig. 1 is 1. for being coated with the structural representation of dielectric thin film layer 10 in substrate 50.Dielectric thin film 10 is formed in the substrate 50 with window, and covers the window of substrate 50.Wherein, dielectric thin film 10 can be silicon nitride material, such as commercially available silicon nitride window, it is also possible to be other dielectric film utilizing micro-nano technology technique to prepare.
Step S2: form conductive layer 20 on the upper surface 11 of dielectric thin film 10 and at least one has the device cell 30 of predetermined pattern, to form a lamination layer structure.The step of Fig. 1 2. for being formed with the structural representation of the device cell 30 of conductive layer 20 and " U " type predetermined pattern on dielectric thin film layer 10.In the process forming lamination layer structure, as shown in Figure 1, it is possible on the upper surface 11 of dielectric thin film 10, first form conductive layer 20, on conductive layer 20, device cell 30 is then formed.In other embodiments, first can also form device cell 30 on the upper surface 11 of dielectric thin film 10, then on the upper surface 11 of dielectric thin film 10, form conductive layer 20 again, so that device cell 30 is between dielectric thin film 10 and conductive layer 20, now the device cell 30 adhesive force on dielectric thin film is bigger.
Conductive layer 20 can be metal material, it is also possible to be that other can diastrophic material.Preferably, metal material can be chosen from one or more in chromium, gold and copper.In a preferred embodiment of the invention, the thickness of conductive layer 20 is 3～10nm.If the thickness of conductive layer is too big, deformation of thin membrane can be caused owing to the stress difference of conductive layer and dielectric layer is relatively big.On the contrary, if the thickness of conductive layer is too little, then can, the conductive effect that do not had discontinuous due to conductive layer and cause electric charge accumulation effect obvious, the problem that showing methods precision reduces.The material of formation device cell 30 can be chosen from one or more in gold, silver, copper, aluminum, nickel, titanium, chromium, ITO, zinc oxide, titanium oxide and Afluon (Asta).Above-mentioned material can stable in the air exist, without influence on the performance of final three-dimensional micro-nano device.In order to ensure the cleannes of conductive layer 20, when adopting metal material as conductive layer 20, it is desirable to by the technique such as wet etching or dry etching, metal surface is processed.
The predetermined pattern formed on device cell 30 is not limited to " u "-shaped structure, it is also possible to select required shape according to the final demand making three-dimension device.As predetermined pattern can also is that triangle, circle, square or etc. other shape and structure.Owing to needing to remove conductive layer 20 in subsequent process steps, therefore, the material forming device cell 30 is preferably not identical with the material forming conductive layer 20.
Step S3: the lamination layer structure obtained in step S2 is cut, becomes locally-attached suspending part 40 obtaining at least one with lamination layer structure.Each suspending part 40 has a corresponding device cell 30.The step of Fig. 1 3. in for obtaining a structural representation becoming locally-attached suspending part 40 with lamination layer structure after lamination layer structure is cut.This suspending part 40 can also be called micro-nano cantilever figure.From figure 1 it appears that suspending part 40 is connected along continuous print straight line with lamination layer structure.Certainly, in other embodiments, suspending part 40 can also be that multiple line segment is connected with lamination layer structure, the otch stayed after having cutting between two adjacent line segments.It is generally adopted ion beam lamination layer structure is cut so that dielectric thin film is cut through, thus obtaining the permeable structures of non-close curve, i.e. suspending part 40.The kind of ion beam can be focused ion bundle or broad beam ion bundle.The energy of ion beam intermediate ion is more than 500 electron-volts.In other embodiments, it would however also be possible to employ uv-exposure/electron beam exposure technique obtains non-close curvilinear figure, and utilizes etching technics to obtain non-close curve permeable structures.
Step S4: adopt ion beam irradiation suspending part 40, so that conductive layer 20 deforms, thus driving suspending part 40 around its local connecting portion 41 with lamination layer structure to the direction flexural deformation away from dielectric thin film 10, thus forming the three dimensional structure of self-supporting.The structural representation that 4. step of Fig. 1 occurs bending and deformation for suspending part 40 after adopting ion beam irradiation.Wherein, the mode of ion beam irradiation includes the overall irradiation to all graphic structures in suspending part 40, or some region is carried out selective local irradiation.Different ion beam irradiation parameters can be adopted and then control the degree of crook of suspending part 40 on dielectric thin film 10, and making the angular range of the extended surface at the suspending part after bending 40 and dielectric thin film 10 place control between 0～180 °.
Step S5: remove at least some of conductive layer 20, obtains the micro-nano device with the insulation of self-supporting three dimensional structure.Step is 5. for exposing the structural representation of dielectric thin film 10 after removing conductive layer 20.Wherein it is possible to adopt wet corrosion technique (as removed chromium with ammonium ceric nitrate/acetic acid solution, to use KI/I2Solution removal gold) or dry etch process (such as reactive ion etching, inductively coupled plasma reactive ion etching etc.) at least remove the conductive layer 20 on the surface 11 of dielectric thin film 10.
In the embodiment shown in fig. 1, conductive layer 20 is entirely removed.In other unshowned embodiment, conductive layer 20 at most only retains the part corresponding with the predetermined pattern of device cell 30, and the part namely only covered at scheduled pattern remains conductive layer 20.
Fig. 2 is the schematic diagram only forming a micro-nano device with self-supporting three dimensional structure on dielectric thin film 10 surface.In other unshowned embodiment of the present invention, in step s 2, multiple device cell 30 can be formed on the upper surface 11 of dielectric thin film 10, namely can be formed the micro-nano device array of three dimensional structure by multiple device cells 30 on the surface of dielectric thin film 10.Further, in step s 5, make between any two device cell 30 insulated from each other after removing partial electroconductive layer 20.
According to a further aspect in the invention, a kind of self-supporting three-dimension device adopting any of the above-described kind of method to prepare is additionally provided.In one embodiment of the invention, as in figure 2 it is shown, self-supporting three-dimension device includes the substrate 50 with window and the dielectric thin film 10 of the self-supporting forming on this base substrate 50 and covering window.Wherein, the dielectric thin film 10 of self-supporting has at a main part 12 extending extension in plane and at least one suspending part 40 cut out from main part 12.Suspending part 40 is connected with main part 12 one-tenth local and deviates from the extension plane of main part 12.Each suspending part 40 is formed with device cell 30.Device cell 30 has predetermined pattern.Suspending part 40 is to make it bend to the direction away from dielectric thin film 10 by ion beam irradiation to obtain.Suspending part 40 is connected along continuous print straight line with main part 12.Certainly, in other embodiments, suspending part 40 can also be that multiple line segment is connected with main part 12, the otch stayed after having cutting between two adjacent line segments.In the embodiment shown in Figure 2, suspending part 40 is rectangle, and device cell 30 is " u "-shaped structure.In other embodiments, device cell 30 can also be triangular structure or other structure.
In a preferred embodiment of the invention, being formed with identically shaped with device cell 30 and size metal level 20 between the suspending part 40 of device cell 30 and dielectric thin film 10, namely device cell 30 is formed on the metal level 20 of suspending part 40.In other embodiments of the invention, device cell 30 can also be formed directly on the suspending part 40 of dielectric thin film 10.Device cell 30 can be a part for suspending part 40, it is also possible to overlapping with suspending part 40.The material of metal level 20 is selected to the flexural deformation when ion irradiation.As it has been described above, the material of metal level 20 can be chromium, gold or copper.The thickness of metal level 20 is 3～10nm.
Beneficial effects of the present invention is further illustrated below in conjunction with embodiment more specifically.
Embodiment 1
Technique shown in Fig. 1 prepares the self-supporting three-dimension device that surface has the insulation of metallic pattern.
Step 1: deposit thickness is that the crome metal of 3nm is as conductive layer on silicon nitride window (being provided by Shanghai NTI Co., Ltd.) that thickness is 50nm.
Step 2: spin coating electron beam resist PMMA on the conductive layer that step 1 obtains, rotating speed is 4000r/ minute, and then spin coating has the silicon nitride window of photoresist be placed on the hot plate of 180 DEG C and toast make solvent volatilize in 1 minute.
Step 3: utilize electron beam exposure technique in step 2) exposure, development on the sample that obtains, obtain the photoetching offset plate figure of the " u "-shaped structure that the length of side is 1.7 μm and live width is 0.5 μm.
Step 4: utilize electron beam evaporation process in step 3) evaporation thickness is the layer gold of 50nm on the sample that obtains.
Step 5: sample step 4 obtained is placed in acetone and soaks 1 hour, dissolve photoresist PMMA.By dissolving photoresist PMMA, the golden film being positioned on its surface is come off from conductive layer, blow away the golden film of sample surfaces with suction pipe gently, pull sample out and dry up with nitrogen, obtaining the metallic pattern on silicon nitride window, i.e. device cell.
Step 6: utilize focused ion bundle to cut out around the metallic pattern that step 5 obtains cantilever design that the length of side is 3 μm (three limits of cantilever design separate with silicon nitride film parent, are only connected, as shown in fig. 1), i.e. and suspending part.Focused ion Shu Caiyong Ga+, ion beam current is sized to 30pA.
Step 7: utilize the cantilever design that focused ion bundle obtains in step 6 to enter line scan with parent local-connection side so that cantilever design is to scan line for axially bending.Ion beam current is sized to 10pA, and sweep time is 0.5 second.
Step 8: sample step 7 obtained is dipped in the mixed liquor of ammonium ceric nitrate and acetic acid (wherein, Ce (NH4)2(NO3)6:CH3COOH:H2O=25g:4.4ml:125ml), soaking to remove conductive layer crome metal, it is thus achieved that surface has the self-supporting three-dimension device of the insulation of metallic pattern, and its electron scanning micrograph is as shown in Figure 3.
Embodiment 2
Step 1: at the upper one layer of ultraviolet photoresist S1813 of spin coating of self-supporting silicon oxide film (being provided by Shanghai NTI Co., Ltd.) that thickness is 100nm, rotating speed during spin coating is 4000r/ minute, is placed in by the self-supporting silicon oxide film with ultraviolet photoresist S1813 on 115 DEG C of hot plates and toasts makes solvent volatilize in 2 minutes.
Step 2: utilize uv-exposure technique to expose on the sample that step 1 obtains, develop, obtains the isosceles right triangle photoetching offset plate figure that hypotenuse length is 4 μm.
Step 3: utilize the electron beam evaporation process silverskin that evaporation thickness is 50nm on the sample that step 2 obtains.
Step 4: sample step 3 obtained is placed in acetone and soaks 1 hour, blow away the silverskin of sample surfaces with suction pipe gently, pull sample out and dry up with nitrogen, obtaining the metallic pattern on self-supporting silicon oxide film.
Step 5: deposit thickness is the metal conducting layer chromium of 10nm on the sample that step 4 obtains.
Step 6: utilize focused ion bundle cut out around the metallic pattern that step 5 obtains the length of side 5 μ m 3 μm cantilever design (three limits of cantilever design separate with silicon oxide film parent, length be 5 μm be connected), i.e. suspending part.Ionic species is Ga+, ion beam current is sized to 30pA.
Step 7: utilizing the side of cantilever design that focused ion bundle obtains in step 6 and parent local-connection to enter line scan, cantilever design is to scan line for axially flexural deformation, thus forming the three dimensional structure of self-supporting.Ion beam current is sized to 30pA, and sweep time is 1.0 seconds.
Step 8: sample step 7 obtained is dipped in the mixed liquor of ammonium ceric nitrate and acetic acid (wherein, Ce (NH4)2(NO3)6:CH3COOH:H2O=25g:4.4ml:125ml), soaking rear removal conductive layer crome metal, it is thus achieved that surface has the self-supporting three-dimension device of the insulation of metallic pattern.
Can be seen that from embodiment 1-2, inventor creatively adopts the dielectric thin film of self-supporting as substrate, adopt the first formation conductive layer on dielectric thin film in embodiment 1, then the mode of device cell is formed on the electrically conductive, or the mode adopting embodiment 2 first forms device cell on dielectric thin film, then on dielectric thin film, form conductive layer, make the mode that device cell is between dielectric thin film and conductive layer, on the dielectric thin film of self-supporting, all prepare the micro-nano device with three dimensional structure and mutually insulated.Can be seen that from embodiment 1-2, the preparation method of the present invention not only technique is flexible, controllability good, cost is low and can large area prepare, and the structure of predetermined pattern, pattern, size and cycle on micro-nano device can also be designed by preparation process, thus obtaining that material category is many, function is unique and baroque self-supporting three-dimension device, the application for micro-nano device provides new technique.
So far, those skilled in the art will recognize that, although the detailed multiple exemplary embodiments illustrate and describing the present invention herein, but, without departing from the spirit and scope of the present invention, still can directly determine according to present disclosure or derive other variations or modifications many meeting the principle of the invention.Therefore, the scope of the present invention is it is understood that cover all these other variations or modifications with regarding as.
Claims (6)
1. a self-supporting three-dimension device, including:
There is the substrate (50) of window；
The dielectric thin film (10) of self-supporting, described dielectric thin film (10) is formed upper in described substrate (50) and covers described window, and has:
The main part (12) extended in plane is extended one；With
From at least one suspending part (40) that described main part (12) cuts out, described suspending part (40) becomes local to be connected with described main part (12) and deviates from the described extension plane of described main part (12)；
At the upper device cell (30) formed of each described suspending part (40), described device cell (30) has predetermined pattern；
Wherein, being formed with identically shaped with described device cell (30) and size metal level (20) between described device cell (30) and described suspending part (40), the material of described metal level (20) is selected to the flexural deformation when ion irradiation；Described suspending part (40) is to make it bend to the direction away from described dielectric thin film (10) by ion beam irradiation to obtain.
2. self-supporting three-dimension device according to claim 1, it is characterised in that the material forming described metal level (20) is chromium, gold or copper.
3. the self-supporting three-dimension device according to any one of claim 1-2, it is characterised in that the thickness of described metal level (20) is 3～10nm.
4. self-supporting three-dimension device according to claim 1, it is characterised in that described suspending part (40) is rectangle.
5. self-supporting three-dimension device according to claim 1, it is characterised in that described suspending part (40) is connected along continuous print straight line with described main part (12).
6. self-supporting three-dimension device according to claim 1, it is characterised in that the described predetermined pattern of described device cell (30) is " u "-shaped or triangular structure.
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| CN110143566B (en) * | 2019-04-22 | 2022-01-25 | 中国科学院物理研究所 | Preparation method of three-dimensional micro-nano paper folding structure |
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| CN102092675B (en) * | 2011-01-14 | 2013-11-27 | 中国科学院物理研究所 | Method for preparing self-masking uni-junction multiport three-dimensional nano structure |
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