CN204497252U - A kind of triple stack layers amorphous germanium silicon film solar batteries - Google Patents
A kind of triple stack layers amorphous germanium silicon film solar batteries Download PDFInfo
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- CN204497252U CN204497252U CN201520170639.4U CN201520170639U CN204497252U CN 204497252 U CN204497252 U CN 204497252U CN 201520170639 U CN201520170639 U CN 201520170639U CN 204497252 U CN204497252 U CN 204497252U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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Abstract
The utility model relates to area of solar cell, be specifically related to a kind of triple stack layers amorphous germanium silicon film solar batteries, comprise substrate, described substrate sets gradually tco layer, photoelectric conversion layer and dorsum electrode layer, described photoelectric conversion layer is composed in series by three knot laminations, comprise P1-I1-N1 layer, P2-I2-N2 layer and P3-I3-N3 layer, described P1-I1-N1 layer is connected with tco layer, described P3-I3-N3 layer is connected with dorsum electrode layer, and described P2-I2-N2 layer is arranged between P1-I1-N1 layer and P3-I3-N3 layer; Described P1-I1-N1 layer and P2-I2-N2 layer and be equipped with intermediate layer between P2-I2-N2 layer and P3-I3-N3 layer; Described dorsum electrode layer comprises reflector and conductive layer, and the utility model compared with prior art, can absorb wider solar spectrum, decrease the reflection of sunlight, increases utilance and the photoelectric conversion rate of incident light.
Description
Technical field
The utility model relates to area of solar cell, is specifically related to a kind of triple stack layers amorphous germanium silicon film solar batteries.
Background technology
In recent years, along with the worsening shortages of the energy, the development and utilization of renewable green energy resource more and more causes the attention of people, particularly to the development and utilization of solar energy.As the solar cell of solar energy conversion medium, particularly based on the thin-film solar cells of amorphous silicon hydride and nanocrystal silicon with its large area, low cost, be easy to the favor that the advantages such as laying are subject to common people.Amorphous silicon thin-film solar cell few by silicon amount, more easily reduces costs, and when silicon material constant tension, thin-film solar cells has become the new trend of solar cell development and new focus.
Due to solar spectrum wider distribution, existing semi-conducting material can only at an effective wave band conversion solar, so unijunction solar cell can not make full use of solar energy.Such as: application number is a kind of silicon-based film solar cells with resilient coating described in 201420184996.1, comprise substrate layer, tco layer, amorphous silicon P-I-N layer and dorsum electrode layer are set at substrate layer successively lamination, described dorsum electrode layer comprises resilient coating and AL layer, described resilient coating is GZO layer and Ag layer, and its shortcoming is that the sunlight spectral region that this solar cell absorbs is narrow, solar energy utilization ratio is lower, light-induced degradation is serious.
Utility model content
One of the utility model object is the deficiency in order to overcome technology, provide a kind of can improve battery incident light quantity, widen battery effectively improves photoelectric conversion efficiency triple stack layers amorphous germanium silicon film solar batteries to solar spectrum response range.
To achieve these goals, the utility model is by the following technical solutions: a kind of triple stack layers amorphous germanium silicon film solar batteries, comprise substrate, described substrate sets gradually tco layer, photoelectric conversion layer and dorsum electrode layer, described photoelectric conversion layer is composed in series by three knot laminations, comprise P1-I1-N1 layer, P2-I2-N2 layer and P3-I3-N3 layer, described P1-I1-N1 layer is connected with tco layer, described P3-I3-N3 layer is connected with dorsum electrode layer, and described P2-I2-N2 layer is arranged between P1-I1-N1 layer and P3-I3-N3 layer; Described P1-I1-N1 layer and P2-I2-N2 layer and be equipped with intermediate layer between P2-I2-N2 layer and P3-I3-N3 layer; Described dorsum electrode layer comprises reflector and conductive layer.
The utility model is by arranging three knot laminated cells, greatly widen the response range of battery to solar spectrum, make full use of solar energy, improve photoelectric conversion efficiency, and intermediate layer is set between adjacent two knot laminations, the output current of upper strata battery by short wavelength light line reflection to upper strata battery, can be improved in intermediate layer, simultaneously through long wave light, ensure that lower floor's cell light absorbs; The light of component permeate photoelectric conversion layer can be reflexed to photoelectric conversion layer and absorb by reflector, improves the utilance of sunlight, increases battery conversion efficiency.
As preferably, described intermediate layer is ZnO layer, and ZnO layer is hyaline layer, refractive index differs comparatively large with silicon layer Refractive Index of Material, by short wavelength light line reflection to upper strata battery, can improve the output current of upper strata battery, simultaneously through long wave light, ensure that lower floor's cell light absorbs.
As preferably, described reflector is GZO layer, and the light of component permeate photoelectric conversion layer can be reflexed to photoelectric conversion layer and absorb by GZO layer, stops the hydrogen ion in photoelectric conversion layer to spread to ITO layer simultaneously.
As preferably, described conductive layer is ITO layer, ensures that back electrode has good conductivity, improves the short-circuit current density of battery.
As preferably, described tco layer is provided with light trapping structure, reduces the reflection of incident light, increases the effective exercise length of sunlight in silicon chip.
As preferably, between described tco layer and photoelectric conversion layer, be provided with anti-reflection layer, reduce the reflection of sunlight, improve incident light quantity.
As preferably, described anti-reflection layer is silicon nitride layer.
The utility model has following beneficial effect: the utility model compared with prior art, can absorb wider solar spectrum, decrease the reflection of sunlight, increases utilance and the photoelectric conversion rate of incident light.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model embodiment;
In figure, 1-substrate; 2-TCO layer; 3-anti-reflection layer; 4-P1-I1-N1 layer; 5-intermediate layer; 6-P2-I2-N2 layer; 7-P3-I3-N3 layer; 8-reflector; 9-conductive layer.
Embodiment
Below in conjunction with accompanying drawing, by specific embodiment, the utility model is described in further detail.
Embodiment: as shown in Figure 1, a kind of triple stack layers amorphous germanium silicon film solar batteries, comprises substrate 1, and substrate 1 is clear glass, substrate 1 sets gradually tco layer 2, photoelectric conversion layer and dorsum electrode layer.Tco layer 2 adopts the tin oxide of doped with fluorine or the thin-film material made by the zinc oxide of adulterated al, light trapping structure is provided with at tco layer 2, namely by LPCVD method or mocvd method, suede structure is set on tco layer 2 surface, the reflection of incident light can be reduced, increase the effective exercise length of sunlight in silicon chip.Be provided with anti-reflection layer 3 between tco layer 2 and photoelectric conversion layer, anti-reflection layer 3 is silicon nitride layer, can reduce the reflection of sunlight, improves incident light quantity.
Photoelectric conversion layer is composed in series by three knot laminations, comprise P1-I1-N1 layer 4, P2-I2-N2 layer 6 and P3-I3-N3 layer 7, P1-I1-N1 layer 4 is connected with tco layer 2, and P3-I3-N3 layer 7 is connected with dorsum electrode layer, and P2-I2-N2 layer 6 is arranged between P1-I1-N1 layer 4 and P3-I3-N3 layer 7; P1-I1-N1 layer 4 and P2-I2-N2 layer 6 and be equipped with intermediate layer 5 between P2-I2-N2 layer 6 and P3-I3-N3 layer 7, intermediate layer 5 is ZnO layer, ZnO layer is hyaline layer, refractive index differs larger with silicon layer Refractive Index of Material, can by short wavelength light line reflection to upper strata battery, improve the output current of upper strata battery, simultaneously through long wave light, ensure that lower floor's cell light absorbs.
Dorsum electrode layer comprises reflector 8 and conductive layer 9.Reflector 8 is GZO layer, and conductive layer 9 is ITO layer.The light of component permeate photoelectric conversion layer can be reflexed to photoelectric conversion layer and absorb by GZO layer, stops the hydrogen ion in photoelectric conversion layer to spread to ITO layer simultaneously; ITO layer ensures that back electrode has good conductivity, improves the short-circuit current density of battery.
Claims (7)
1. a triple stack layers amorphous germanium silicon film solar batteries, comprise substrate (1), described substrate (1) sets gradually tco layer (2), photoelectric conversion layer and dorsum electrode layer, it is characterized in that: described photoelectric conversion layer is composed in series by three knot laminations, comprise P1-I1-N1 layer (4), P2-I2-N2 layer (6) and P3-I3-N3 layer (7), described P1-I1-N1 layer (4) is connected with tco layer (2), described P3-I3-N3 layer (7) is connected with dorsum electrode layer, and described P2-I2-N2 layer (5) is arranged between P1-I1-N1 layer (4) and P3-I3-N3 layer (7); Described P1-I1-N1 layer (4) and P2-I2-N2 layer (6) and be equipped with intermediate layer (5) between P2-I2-N2 layer (6) and P3-I3-N3 layer (7); Described dorsum electrode layer comprises reflector (8) and conductive layer (9).
2. a kind of triple stack layers amorphous germanium silicon film solar batteries according to claim 1, is characterized in that: described intermediate layer (5) are ZnO layer.
3. a kind of triple stack layers amorphous germanium silicon film solar batteries according to claim 1, is characterized in that: described reflector (8) are GZO layer.
4. a kind of triple stack layers amorphous germanium silicon film solar batteries according to claim 1, is characterized in that: described conductive layer (9) is ITO layer.
5. a kind of triple stack layers amorphous germanium silicon film solar batteries according to claim 1, is characterized in that: described tco layer (2) is provided with light trapping structure.
6. a kind of triple stack layers amorphous germanium silicon film solar batteries according to claim 5, is characterized in that: be provided with anti-reflection layer (3) between described tco layer (2) and photoelectric conversion layer.
7. a kind of triple stack layers amorphous germanium silicon film solar batteries according to claim 6, is characterized in that: described anti-reflection layer (3) is silicon nitride layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520170639.4U CN204497252U (en) | 2015-03-25 | 2015-03-25 | A kind of triple stack layers amorphous germanium silicon film solar batteries |
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| CN201520170639.4U CN204497252U (en) | 2015-03-25 | 2015-03-25 | A kind of triple stack layers amorphous germanium silicon film solar batteries |
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| CN204497252U true CN204497252U (en) | 2015-07-22 |
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Address after: 313100 No. 970 Taihu Avenue, Changxing Economic Development Zone, Huzhou City, Zhejiang Province Patentee after: ZHEJIANG CHANGXING HANERGY FILM SOLAR ENERGY CO.,LTD. Address before: 313100 No. 970 Taihu Avenue, Changxing Economic Development Zone, Huzhou City, Zhejiang Province Patentee before: ZHEJIANG CHANGXING HANERGY PHOTOVOLTAIC CO.,LTD. |
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Effective date of registration: 20190211 Address after: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee after: HANERGY PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. Address before: 313100 No. 970 Taihu Avenue, Changxing Economic Development Zone, Huzhou City, Zhejiang Province Patentee before: ZHEJIANG CHANGXING HANERGY FILM SOLAR ENERGY CO.,LTD. |
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Effective date of registration: 20190311 Address after: Room 107, Building 2, Olympic Village Street Comprehensive Office District, Chaoyang District, Beijing Patentee after: HANERGY MOBILE ENERGY HOLDING GROUP Co.,Ltd. Address before: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee before: HANERGY PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. |