CN204497254U - A kind of amorphous silicon thin-film solar low pressure components - Google Patents
A kind of amorphous silicon thin-film solar low pressure components Download PDFInfo
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- CN204497254U CN204497254U CN201520170684.XU CN201520170684U CN204497254U CN 204497254 U CN204497254 U CN 204497254U CN 201520170684 U CN201520170684 U CN 201520170684U CN 204497254 U CN204497254 U CN 204497254U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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Abstract
The utility model relates to area of solar cell, be specifically related to a kind of amorphous silicon thin-film solar low pressure components, substrate sets gradually front electrode layer, photoelectric conversion layer and dorsum electrode layer, photoelectric conversion layer is composed in series by three knot laminations, comprise P1-I1-N1 layer, P2-I2-N2 layer and P3-I3-N3 layer, described P1-I1-N1 layer and P2-I2-N2 layer and be equipped with intermediate layer between P2-I2-N2 layer and P3-I3-N3 layer; Carry out the sub-battery that laser scoring forms multiple series connection and the dead band be distributed between adjacent two sub-batteries at front electrode layer, photoelectric conversion layer and dorsum electrode layer respectively, the quantity of sub-battery is 19-20, and the quantity in dead band is 18-19.The voltage of original solar module is reduced to 45V from 90V by the utility model, the use of cable is decreased when making solar module access inverter, by the width optimizing the quantity of sub-battery, width adjusts dead band, reduce the area in dead band, increase effective usable floor area of solar cell, simultaneously by arranging intermediate layer, improve battery component to the utilance of sunlight and power output.
Description
Technical field
The utility model relates to area of solar cell, is specifically related to a kind of amorphous silicon thin-film solar low pressure components.
Background technology
In recent years, conventional amorphous silicon film battery is all the characteristic of high voltage, low current, the maximum input voltage value considering inverter is needed when it is used in distributed power plant application, but the maximum input voltage value of family inverter is instantly only 500V-600V, and the voltage of our existing hull cell is 90V, electric current is 1.1A, therefore can only 6 one series connection when its access inverter time, and then every 6 are carried out parallel connection.If design it and voltage be down to 45V, electric current is 2.2A, like this access inverter just can 12 one series connection, be connected in series than being connected in parallel remaining many cable expenses due to cell piece, therefore a large amount of cable expenses can be saved, but internal resistance increases during cell piece series connection, power loss is comparatively large, greatly have impact on the stable output of the power of battery.
Utility model content
One of the utility model object is the deficiency in order to overcome technology, provides a kind of structure of new thin film solar low pressure components, can optimize its sub-battery structure thus reduce its voltage, can stablize its power output again.
To achieve these goals, the utility model is by the following technical solutions: a kind of amorphous silicon thin-film solar low pressure components, comprise substrate, described substrate sets gradually front electrode layer, photoelectric conversion layer and dorsum electrode layer, described photoelectric conversion layer is composed in series by three knot laminations, comprise P1-I1-N1 layer, P2-I2-N2 layer and P3-I3-N3 layer, described P1-I1-N1 layer and P2-I2-N2 layer and be equipped with intermediate layer between P2-I2-N2 layer and P3-I3-N3 layer; Carry out the sub-battery that laser scoring forms multiple series connection and the dead band be distributed between adjacent two sub-batteries at front electrode layer, photoelectric conversion layer and dorsum electrode layer respectively, the quantity of described sub-battery is 19-20, and the quantity in described dead band is 18-19.
The utility model is by optimizing the quantity of sub-battery, make sub-number of batteries be 19-20, thus make the output voltage of single battery assembly reduce to 45V, thus battery component is linked into inverter by series connection, simplify the connected mode of battery component, save the cable expense connected.Internal resistance is caused to increase because battery component is connected in series, the power output of battery component reduces, therefore by arranging intermediate layer in photoelectric conversion layer, can by short wavelength light line reflection to upper strata battery, improve the output current of upper strata battery, simultaneously through long wave light, ensure that lower floor's cell light absorbs, increase the utilance of sunlight, improve power output.
As preferably, the width of described sub-battery is 2.99-3.15cm, and the width in described dead band is 0.25-0.3mm.
As preferably, described intermediate layer is ZnO layer.
As preferably, described front electrode layer comprises reflector and conductive layer.
As preferably, described reflector is GZO layer, and described conductive layer is ITO layer.
As preferably, described front electrode layer is provided with light trapping structure.
As preferably, between described front electrode layer and substrate, be provided with anti-reflection layer.
As preferably, described anti-reflection layer is silicon nitride layer.
The utility model has following beneficial effect: the voltage of original solar module is reduced to 45V from 90V by the utility model, the use of cable is decreased when making solar module access inverter, by the width optimizing the quantity of sub-battery, width adjusts dead band, decrease the area in dead band, add effective usable floor area of solar cell, simultaneously by arranging intermediate layer, improve battery component to the utilance of sunlight and power output.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model embodiment;
Fig. 2 is the structural representation of photoelectric conversion layer in the utility model embodiment;
In figure, 1-substrate; 2-anti-reflection layer; Electrode layer before 3-; 31-conductive layer; 32-reflector; 4-photoelectric conversion layer; 41-P1-I1-N1 layer; 42-P2-I2-N2 layer; 43-P3-I3-N3 layer; 5-dorsum electrode layer; 6-intermediate layer; Electrode layer laser scoring before p1-; P2-photoelectric conversion layer laser scoring; P3-dorsum electrode layer laser scoring; W1-cell widths; W2-skip distance.
Embodiment
Below in conjunction with accompanying drawing, by specific embodiment, the utility model is described in further detail.
Embodiment: as shown in Figure 1 to Figure 2, a kind of specification is the amorphous silicon thin-film solar low pressure components of 124.5*63.5cm, set gradually front electrode layer 3 on substrate 1, photoelectric conversion layer 4 and dorsum electrode layer 5, respectively at front electrode layer 3, photoelectric conversion layer 4 and dorsum electrode layer 5 carry out laser scoring and form front electrode layer laser scoring p1, photoelectric conversion layer laser scoring p2, dorsum electrode layer laser scoring p3, solar energy low pressure component clustering is the sub-batteries of 19 series connection and the dead band that is distributed between adjacent two sub-batteries as one group of groove by these three grooves jointly, dead band quantity is 18.Sub-cell widths w1 be the outward flange of dorsum electrode layer laser scoring p3 from one group of groove before another group groove in electrode layer laser scoring p1 with the immediate edge of dorsum electrode layer laser scoring p3, its width is 3.15cm; Skip distance w2 is the outward flange of front electrode layer laser scoring p1 to dorsum electrode layer laser scoring p3 from one group of groove, and its width is 0.25mm.
Front electrode layer 3 is tco layer, arranges suede structure by LPCVD method or mocvd method on tco layer surface, forms light trapping structure, reduces the reflection of incident light.Be provided with anti-reflection layer 2 between front electrode layer 3 and substrate 1, anti-reflection layer 2 is silicon nitride layer, can reduce the reflection of sunlight, improves incident light quantity.Photoelectric conversion layer 4 is composed in series by three knot laminations, comprise P1-I1-N1 layer 41, P2-I2-N2 layer 42 and P3-I3-N3 layer 43, P1-I1-N1 layer 41 and P2-I2-N2 layer 42 and be equipped with intermediate layer 6 between P2-I2-N2 layer 42 and P3-I3-N3 layer 43, intermediate layer 6 is ZnO layer, and ZnO layer is hyaline layer, and refractive index differs larger with silicon layer Refractive Index of Material, can by short wavelength light line reflection to upper strata battery, improve the output current of upper strata battery, simultaneously through long wave light, ensure that lower floor's cell light absorbs.Front electrode layer 3 comprises reflector 32 and conductive layer 31, reflector 32 is GZO layer, conductive layer 31 is ITO layer, and the light of component permeate photoelectric conversion layer can be reflexed to photoelectric conversion layer and absorb by GZO layer, stops the hydrogen ion in photoelectric conversion layer to spread to ITO layer simultaneously; ITO layer ensures that back electrode has good conductivity, improves the short-circuit current density of battery.
Embodiment 2: be with above-described embodiment difference: sub-number of batteries is 20, sub-cell widths w1 is 2.99cm; Dead band quantity is 19, and skip distance w2 is 0.3mm.
Claims (8)
1. an amorphous silicon thin-film solar low pressure components, comprise substrate (1), described substrate (1) sets gradually front electrode layer (3), photoelectric conversion layer (4) and dorsum electrode layer (5), it is characterized in that: described photoelectric conversion layer (4) is composed in series by three knot laminations, comprise P1-I1-N1 layer (41), P2-I2-N2 layer (42) and P3-I3-N3 layer (43), described P1-I1-N1 layer (41) and P2-I2-N2 layer (42) and be equipped with intermediate layer (6) between P2-I2-N2 layer (42) and P3-I3-N3 layer (43); The sub-battery that laser scoring forms multiple series connection and the dead band be distributed between adjacent two sub-batteries is carried out respectively at front electrode layer (3), photoelectric conversion layer (4) and dorsum electrode layer (5), the quantity of described sub-battery is 19-20, and the quantity in described dead band is 18-19.
2. a kind of amorphous silicon thin-film solar low pressure components according to claim 1, is characterized in that: the width of described sub-battery is 2.99-3.15cm, and the width in described dead band is 0.25-0.3mm.
3. a kind of amorphous silicon thin-film solar low pressure components according to claim 1, is characterized in that: described intermediate layer (6) are ZnO layer.
4. a kind of amorphous silicon thin-film solar low pressure components according to claim 1, is characterized in that: described front electrode (3) layer comprises reflector (32) and conductive layer (31).
5. a kind of amorphous silicon thin-film solar low pressure components according to claim 4, is characterized in that: described reflector (32) are GZO layer, and described conductive layer (31) is ITO layer.
6. a kind of amorphous silicon thin-film solar low pressure components according to claim 1, is characterized in that: described front electrode layer (3) is provided with light trapping structure.
7. a kind of amorphous silicon thin-film solar low pressure components according to claim 6, is characterized in that: be provided with anti-reflection layer (2) between described front electrode layer (3) and substrate (1).
8. a kind of amorphous silicon thin-film solar low pressure components according to claim 7, is characterized in that: described anti-reflection layer (2) is silicon nitride layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201520170684.XU CN204497254U (en) | 2015-03-25 | 2015-03-25 | A kind of amorphous silicon thin-film solar low pressure components |
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| CN201520170684.XU CN204497254U (en) | 2015-03-25 | 2015-03-25 | A kind of amorphous silicon thin-film solar low pressure components |
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| CN204497254U true CN204497254U (en) | 2015-07-22 |
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Address after: 313100 No. 970 Taihu Avenue, Changxing Economic Development Zone, Huzhou City, Zhejiang Province Patentee after: ZHEJIANG CHANGXING HANERGY FILM SOLAR ENERGY CO.,LTD. Address before: 313100 No. 970 Taihu Avenue, Changxing Economic Development Zone, Huzhou City, Zhejiang Province Patentee before: ZHEJIANG CHANGXING HANERGY PHOTOVOLTAIC CO.,LTD. |
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Effective date of registration: 20190202 Address after: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee after: HANERGY PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. Address before: 313100 No. 970 Taihu Avenue, Changxing Economic Development Zone, Huzhou City, Zhejiang Province Patentee before: ZHEJIANG CHANGXING HANERGY FILM SOLAR ENERGY CO.,LTD. |
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Effective date of registration: 20190307 Address after: Room 107, Building 2, Olympic Village Street Comprehensive Office District, Chaoyang District, Beijing Patentee after: HANERGY MOBILE ENERGY HOLDING GROUP Co.,Ltd. Address before: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee before: HANERGY PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. |