CN202957277U - Heterojunction laminated thin film solar cell - Google Patents
Heterojunction laminated thin film solar cell Download PDFInfo
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- CN202957277U CN202957277U CN201220439448.XU CN201220439448U CN202957277U CN 202957277 U CN202957277 U CN 202957277U CN 201220439448 U CN201220439448 U CN 201220439448U CN 202957277 U CN202957277 U CN 202957277U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model discloses a heterojunction laminated thin film solar cell comprising a glass substrate, a transparent conductive film layer, a p-type amorphous silicon layer, an intrinsic amorphous silicon layer, an n-type amorphous silicon layer, a p-type cadmium telluride film layer, an n-type cadmium sulfide film layer, a buffer layer and a metal layer back electrode. The p-type cadmium telluride film layer is located between the n-type amorphous silicon layer and the n-type cadmium sulfide film layer. The heterojunction laminated thin film solar cell of the utility model enables a sunlight absorption scope to be expanded to 1100 nm, and is conducive to improving a conversion efficiency. Compared with a cell having an a-Si/uc-Si laminated structure, a cell having an a-Si/CdTe laminated structure has a similar sunshine absorption wavelength range, and has a good long-term usage stability and a high photoelectric conversion efficiency. Moreover, a CdTe preparation device is relatively simple, is relatively mature in technology and low in device investment and production manufacturing cost, and is conducive to localization.
Description
Technical field
The utility model relates to a kind of solar cell, particularly relates to a kind of heterojunction laminated film solar battery.
Background technology
Along with human social development, earth population increases, and the consumption of the energy is increasingly sharpened.Under this overall background, the clean energy resourcies such as solar energy, wind energy, water energy are developed rapidly.The sunlight absorption coefficient that the Si base thin film solar battery is high with it, the temperature coefficient of battery efficiency is little, production cost is low, and it is the highest that the advantages such as suitable extensive large scale production become in all thin film solar cells industrialization level, the thin film solar cell of actual production scale maximum.The development of silicon-based thin film solar cell is from unijunction a-Si to binode a-Si/a-Si and a-Si/a-Si/a-SiGe.Photo attenuation effect because amorphous silicon exists, affected its transfer ratio.The optical band gap of a-Si:H can absorb at 1.7-1.8eV the light that is less than 800nm, insensitive to Long wavelength region.In order to improve power, reduce decay, the researcher has introduced the microcrystal silicon material.Uc-Si has narrower energy gap 1.1eV, and light durability preferably.The a-Si/uc-Si thin-film solar cell structure is selected by several influential equipment vendors such as Applied material, Oerlikon, ULVAC in recent years.The a-Si/uc-Si hull cell has moved towards industrialization, and becomes the silicon-base thin-film battery of current main flow.But there is following shortcoming in the a-Si/uc-Si hull cell: 1) intrinsic micro crystal silicon is low at long-wave band (λ > 800nm) absorption coefficient, for abundant absorption spectrum, require the i layer thickness to be greater than 1 μ m (general amorphous silicon battery i layer thickness only has 0.5 μ m left and right); 2) normally prepared by microcrystal silicon under the highly diluted condition, and along with the hydrogen dilution improves, growth rate reduces, and its deposition rate is well below amorphous silicon usually; 3) due to the diversity of microcrystal silicon structure, not all microcrystal silicon battery is all stable after long-time illumination, and particularly those microcrystal silicon batteries that contain the larger proportion amorphous component produce decline under the high light condition.4) growth conditions of microcrystal silicon is high to equipment requirement, and throughput rate is slow, and power consumption is large.Caused AM, Oerlikon PV business device company to be forced to stop production or to resell.A-Si/uc-Si structural membrane battery faces very large challenge aspect reducing costs.
Cadmium telluride (CdTe) is a kind of compound semiconductor that direct photoelectric conversion is had to ideal bandgap (1.45eV).The absorption coefficient of light is high, and the thin layer that 1um is thick just can absorb the visible ray that is greater than 99%.1956, CdTe was suggested and is applied on solar cell.Nineteen sixty P-CdTe/n-CdS(p-cadmium telluride/n-cadmium sulfide) battery starts research and development.The small size CdTe hull cell photoelectric conversion efficiency of the best that the current thin film battery has been made is higher than 15%.The 1.032cm of U.S. NREL research and development
2Efficiency reaches 16.7% ± 0.5.U.S. first solar is global maximum CdTe thin film solar cell manufacturing enterprise.Its technical merit is walked the prostatitis in the world.CdTe battery industry manufacture craft is ripe.The spectrum of CdTe hull cell and the sun is the most consistent, can absorb the sunlight more than 95%.Standard technology, low energy consumption, after life cycle finishes, recyclable, strong and weak light all can generate electricity, and the higher performance of temperature is better.
The utility model content
The purpose of this utility model be provide in order to address the above problem that a kind of sunlight absorbing wavelength scope is wide, photoelectric conversion efficiency is high, the heterojunction laminated film solar battery of low cost of manufacture and stability in use.
The utility model is achieved through the following technical solutions:
A kind of heterojunction laminated film solar battery, comprise glass substrate, transparent conductive film layer, p-type amorphous silicon layer, intrinsic amorphous silicon layer, N-shaped amorphous silicon layer, p-type Cadimium telluride thin film layer, N-shaped cadmium sulphide membrane layer, buffering Buffer layer and metal level back electrode, described p-type Cadimium telluride thin film layer is between described N-shaped amorphous silicon layer and described N-shaped cadmium sulphide membrane layer.
By a-Si:H and CdTe(cadmium telluride) battery coupling is made a-Si/CdTe(silica-based/cadmium telluride) laminated cell not only can expand sunlight absorbing wavelength scope, improve transfer ratio, and be conducive to improve the photo attenuation problem.The relative uc-Si of CdTe preparation technology is simple in addition, aspect reducing costs, more has superiority.
Further, described heterojunction laminated film solar battery is followed successively by from top to bottom: glass substrate, transparent conductive film layer, p-type amorphous silicon layer, intrinsic amorphous silicon layer, N-shaped amorphous silicon layer, p-type Cadimium telluride thin film layer, N-shaped cadmium sulphide membrane layer, buffering Buffer layer and metal level back electrode.Sunlight is from the incident of metal backing auroral poles aspect.
Further, described heterojunction laminated film solar battery is followed successively by from top to bottom: glass substrate, metal level back electrode, buffering Buffer layer, N-shaped cadmium sulphide membrane layer, p-type Cadimium telluride thin film layer, p-type amorphous silicon layer, intrinsic amorphous silicon layer, N-shaped amorphous silicon layer and transparent conductive film layer.Sunlight is from the incident of nesa coating aspect.
As preferably, the thickness of described P type amorphous silicon layer is 25-40nm; The thickness of described intrinsic amorphous silicon layer is 150-200nm; The thickness of described N-shaped amorphous silicon layer is 10-20nm.
As preferably, the thickness of described p-type Cadimium telluride thin film layer is 2um-5um.
As preferably, the thickness of described N-shaped cadmium sulphide membrane layer is 0.1um-0.2um.
Further, the ZnO layer that described buffering Buffer layer is 50nm by thickness and the AZO layer of thickness 100-200nm form.
The beneficial effects of the utility model are:
The utility model has been expanded absorption region to sunlight to 1100nm, contributes to improve conversion efficiency.With the a-Si/uc-Si lamination, compare, the a-Si/CdTe lamination has close sunlight absorbing wavelength scope, the long-term stability in use had, and photoelectric conversion efficiency is high.And the CdTe Preparation equipment is relatively simple, technique is relatively ripe, equipment investment is low, manufacturing cost is low, is conducive to production domesticization.
The accompanying drawing explanation
Fig. 1 is the structural representation one of the utility model heterojunction laminated film solar battery;
Fig. 2 is the structural representation two of the utility model heterojunction laminated film solar battery.
In figure: 1-metal level back electrode, 2-buffering Buffer layer, 3-n type cadmium sulphide membrane layer, 4-p type Cadimium telluride thin film layer, 5-n type amorphous silicon layer, 6-intrinsic amorphous silicon layer, 7-p type amorphous silicon layer, 8-transparent conductive film layer, 9-glass substrate.
Embodiment
Below in conjunction with drawings and the specific embodiments, the utility model is described in further detail:
As depicted in figs. 1 and 2, the utility model heterojunction laminated film solar battery, comprise glass substrate 9, transparent conductive film layer 8, p-type amorphous silicon layer 7, intrinsic amorphous silicon layer 6, N-shaped amorphous silicon layer 5, p-type Cadimium telluride thin film layer 4, N-shaped cadmium sulphide membrane layer 3, buffering Buffer layer 2 and metal level back electrode 1, p-type Cadimium telluride thin film layer 4 is between N-shaped amorphous silicon layer 5 and N-shaped cadmium sulphide membrane layer 3.
A-Si:H and CdTe battery coupling is made to the a-Si/CdTe laminated cell and not only can expand sunlight absorbing wavelength scope, improve transfer ratio, and be conducive to improve the photo attenuation problem.The relative uc-Si of CdTe preparation technology is simple in addition, aspect reducing costs, more has superiority.
In embodiment 1, as shown in Figure 1, described heterojunction laminated film solar battery is followed successively by from top to bottom: glass substrate 9, transparent conductive film layer 8, p-type amorphous silicon layer 7, intrinsic amorphous silicon layer 6, N-shaped amorphous silicon layer 5, p-type Cadimium telluride thin film layer 4, N-shaped cadmium sulphide membrane layer 3, buffering Buffer layer 2 and metal level back electrode 1.Sunlight is from the incident of metal backing auroral poles aspect.
In embodiment 2, as shown in Figure 2, described heterojunction laminated film solar battery is followed successively by from top to bottom: glass substrate 9, metal level back electrode 1, buffering Buffer layer 2, N-shaped cadmium sulphide membrane layer 3, p-type Cadimium telluride thin film layer 4, p-type amorphous silicon layer 7, intrinsic amorphous silicon layer 6, N-shaped amorphous silicon layer 5 and transparent conductive film layer 8.Sunlight is from 8 incidents of transparent conductive film layer.
The thickness of P type amorphous silicon layer 7 is 25-40nm, and in the present embodiment, the thickness of P type amorphous silicon layer 7 is 30nm.The thickness of intrinsic amorphous silicon layer 6 is 150-200nm, and in the present embodiment, the thickness of intrinsic amorphous silicon layer 6 is 160nm; The thickness of N-shaped amorphous silicon layer 5 is 10-20nm, and in the present embodiment, the thickness of N-shaped amorphous silicon layer 5 is 12nm.The thickness of p-type Cadimium telluride thin film layer 4 is 2um-5um, and in the present embodiment, the thickness of p-type Cadimium telluride thin film layer 4 is 3um.
The thickness of N-shaped cadmium sulphide membrane layer 3 is 0.1um-0.2um.Buffering Buffer layer 2 is comprised of ZnO layer and AZO layer.ZnO is the metal-oxide semiconductor (MOS) of direct band gap, and the ZnO of self-sow is N-shaped, the same with the CdS film, belongs to the hexagonal crystal system wurtzite structure.And good Lattice Matching is arranged between CdS.Because the photoelectric current of output is perpendicular to high resistant ZnO, but laterally by low-resistance AZO, flow to the collection back electrode, in order to reduce the series resistance of solar cell, resistive formation wants thin and low resistance is thick.The thickness of ZnO layer is preferably 50nm, and the thickness of AZO layer is preferably 100nm-200nm.
Claims (10)
1. a heterojunction laminated film solar battery, comprise glass substrate, transparent conductive film layer, p-type amorphous silicon layer, intrinsic amorphous silicon layer, N-shaped amorphous silicon layer, N-shaped cadmium sulphide membrane layer, buffering Buffer layer and metal level back electrode, it is characterized in that: also comprise p-type Cadimium telluride thin film layer, described p-type Cadimium telluride thin film layer is between described N-shaped amorphous silicon layer and described N-shaped cadmium sulphide membrane layer.
2. heterojunction laminated film solar battery according to claim 1, it is characterized in that: described heterojunction laminated film solar battery is followed successively by from top to bottom: glass substrate, transparent conductive film layer, p-type amorphous silicon layer, intrinsic amorphous silicon layer, N-shaped amorphous silicon layer, p-type Cadimium telluride thin film layer, N-shaped cadmium sulphide membrane layer, buffering Buffer layer and metal level back electrode.
3. heterojunction laminated film solar battery according to claim 1, it is characterized in that: described heterojunction laminated film solar battery is followed successively by from top to bottom: glass substrate, metal level back electrode, buffering Buffer layer, N-shaped cadmium sulphide membrane layer, p-type Cadimium telluride thin film layer, p-type amorphous silicon layer, intrinsic amorphous silicon layer, N-shaped amorphous silicon layer and transparent conductive film layer.
4. according to the described heterojunction laminated film solar battery of any one in claims 1 to 3, it is characterized in that: the thickness of described P type amorphous silicon layer is 25-40nm; The thickness of described intrinsic amorphous silicon layer is 150-200nm; The thickness of described N-shaped amorphous silicon layer is 10-20nm.
5. according to the described heterojunction laminated film solar battery of any one in claims 1 to 3, it is characterized in that: the thickness of described p-type Cadimium telluride thin film layer is 2um-5um.
6. heterojunction laminated film solar battery according to claim 4, it is characterized in that: the thickness of described p-type Cadimium telluride thin film layer is 2um-5um.
7. according to the described heterojunction laminated film solar battery of any one in claims 1 to 3, it is characterized in that: the thickness of described N-shaped cadmium sulphide membrane layer is 0.1um-0.2um.
8. heterojunction laminated film solar battery according to claim 4, it is characterized in that: the thickness of described N-shaped cadmium sulphide membrane layer is 0.1um-0.2um.
9. heterojunction laminated film solar battery according to claim 5, it is characterized in that: the thickness of described N-shaped cadmium sulphide membrane layer is 0.1um-0.2um.
10. according to the described heterojunction laminated film solar battery of any one in claims 1 to 3, it is characterized in that: described buffering Buffer layer is comprised of ZnO layer and AZO layer.
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| CN201220439448.XU CN202957277U (en) | 2012-08-31 | 2012-08-31 | Heterojunction laminated thin film solar cell |
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| CN201220439448.XU CN202957277U (en) | 2012-08-31 | 2012-08-31 | Heterojunction laminated thin film solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108281510A (en) * | 2018-02-02 | 2018-07-13 | 辽宁太阳能研究应用有限公司 | Silicon based cells plate deposits the preparation method of cadmium telluride-based pellicular cascade solar cell material |
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2012
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108281510A (en) * | 2018-02-02 | 2018-07-13 | 辽宁太阳能研究应用有限公司 | Silicon based cells plate deposits the preparation method of cadmium telluride-based pellicular cascade solar cell material |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: HANERGY SOLAR PHOTOVOLTAIC TECHNOLOGY LIMITED Effective date: 20141022 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| C53 | Correction of patent of invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zhuang Chunquan Inventor after: Wang Jianqiang Inventor after: Dong Deqing Inventor after: Li Wei Inventor after: Li Jingang Inventor after: Wang Rui Inventor before: Zhuang Chunquan Inventor before: Wang Jianqiang Inventor before: Dong Deqing Inventor before: Li Wei |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: ZHUANG CHUNQUAN WANG JIANQIANG DONG DEQING LI WEI TO: ZHUANG CHUNQUAN WANG JIANQIANG DONG DEQING LI WEI LI JINGANG WANG RUI |
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| TR01 | Transfer of patent right |
Effective date of registration: 20141022 Address after: The Great Wall Road, 610000 Street Shuangliu Southwest Airport in Sichuan province Chengdu City No. two business center building room 101 Patentee after: SICHUAN HANERGY SOLAR Co.,Ltd. Patentee after: Hanenergy Solar Photovoltaic Technology Co.,Ltd. Address before: The Great Wall Road, 610000 Street Shuangliu Southwest Airport in Sichuan province Chengdu City No. two business center building room 101 Patentee before: SICHUAN HANERGY SOLAR Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210728 Address after: 518129 1st floor, building 2, xintianxia industrial city, Longping Road, Bantian street, Longgang District, Shenzhen City, Guangdong Province Patentee after: Shenzhen youtonghui Technology Co.,Ltd. Address before: Room 101, Venture Center building, No.2, Section 1, Changcheng Road, xihanggang street, Shuangliu, Chengdu, Sichuan 610000 Patentee before: SICHUAN HANERGY SOLAR Co.,Ltd. Patentee before: Hanenergy Solar Photovoltaic Technology Co.,Ltd. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130529 |