CN207458972U - A kind of new heterojunction solar battery - Google Patents
A kind of new heterojunction solar battery Download PDFInfo
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- CN207458972U CN207458972U CN201721213356.9U CN201721213356U CN207458972U CN 207458972 U CN207458972 U CN 207458972U CN 201721213356 U CN201721213356 U CN 201721213356U CN 207458972 U CN207458972 U CN 207458972U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The utility model discloses a kind of new heterojunction solar battery, the P layers including back electrode layer, on back electrode layer, the Window layer on P layers, the Window layer is to be doped with the ZnO film of Al；It is doped with the ZnO film and P layers of formation PN junction of Al.Oxidic, transparent, conductive layers and N-type Window layer are combined into one by the utility model, form NIP type heterojunction solar batteries, by forming hetero-junctions with the material preparation of different band gap on the monosilicon, are improved the efficiency of solar cell, are added the utilization rate of solar energy.
Description
Technical field
The utility model is related to the research fields of solar cell, are specifically hetero-junction thin-film solar cell.
Background technology
Solar cell is also known as photovoltaic cell, is a kind of semiconductor devices for solar energy directly being converted electric energy, and work is former
Reason is：When semiconductor wafer is by illumination, if photon energy is more than the energy gap of semiconductor, valence-band electrons can absorb
The energy of photon leaps to conduction band by forbidden band, due to the effect of built in field, is produced when occurring one at the both ends of PN junction because illumination
Raw electromotive force, material is thus formed power supplys, you can powers to external circuit.
Since preparing first solar cell from the AT＆T Labs in the U.S. in 1954, it is swift and violent that solar cell has started it
The step of development is distinguished from the maturity of solar cell generation technology, and solar cell can be divided into following several stages：The first generation
Crystal-silicon solar cell, the various thin film solar cells of the second generation, the third generation solar cell：Various super stacked solar cell, cascade solar cells, heat
Photovoltaic cell (TPV), Quantum Well and quantum dot superlattice solar cell, Intermediate Gray solar cell, it is upper conversion solar cell, lower turn
Change the new concepts solar cells such as solar cell, hot carrier solar cell, impact ionization solar cell.
At this stage using the thin-film type solar cell of photoelectric effect work as mainstream, and the implementation to be worked with photochemical effect
Solar cell is then also in the budding stage.The typical structure of thin film solar cell is as shown in Figure 1 and Figure 2.Use different materials
With technology of preparing, solar battery structure will be different, but basic solar battery structure can be divided into：Back electrode layer, P layers, N layers
(Window layer), oxidic, transparent, conductive layers and five major parts of finger-type top electrode, the solar cell of NIP types also include I layers.
The effect of back electrode layer (or lower electrode or hearth electrode) is to will be moved to the electronics of lower surface or hole taking-up, with
It forms foreign current and is supplied to external loading.
P layers and N layers contact form PN junction, and under thermal equilibrium state, internal electric field is formed between P layers and N layers.It is tied for NIP
Structure, photo-generated carrier are mainly formed at intrinsic layer, and under the action of internal electric field, light induced electron flows to N layers, and photohole flows to
P layers.Under open-circuit condition, light induced electron tires out in N laminations, and photohole tires out in P laminations.At this moment photogenerated charge is in P layers and N layers
Electric field is generated, makes the photohole in the light induced electron accumulated in N layers and P layers that there is the trend spread in the opposite direction, with
Offset the collected current of photo-generated carrier.When reaching dynamic equilibrium between the collected current under dissufion current and built-in field action
When, then will there is no electrostatic current in intrinsic layer.
The effect of oxidic, transparent, conductive layers is to reduce incident visible ray to reflect on the surface of device.
The effect of finger-type top electrode is to will move to the electronics on surface or hole taking-up, and outside is supplied to form foreign current
Load.In upper surface, the electrode of plane of illumination is mostly made of several main grids in finger-type.
Due to the development for factors the limit crystal-silicon solar cell such as manufacturing cost is high, takes up a large area, compared to crystal silicon
The characteristics of solar cell, silicon-based thin film solar cell is maximum is exactly that at low cost, preparation process is simple.Thin film solar cell can sink
Product is on glass, stainless steel, plastics, ceramic substrate or film, and the semiconductor layer of thin film solar cell is (several microns or several very thin
Ten microns of thickness), can the active layer of filming must strengthen its mechanical performance with substrate, the semiconductive thin film formed on substrate
It can be polycrystalline or amorphous, not necessarily use monocrystal material.Therefore, the film of different materials is researched and developed too
Positive electricity pond is the effective way for reducing cost, to greatly save solar cell material, reduces production cost.
PN junction is made with homojunction in most domestic silica-based solar cell at present, less efficient.Heterojunction solar battery exists
A hetru P-N junction is formed on the interface that two kinds of semi-conducting materials of different energy gaps are in contact.Hetero-junctions has following excellent
Point：(1) heterojunction solar battery is formed by the different material of energy gap, can broadening to the absorption spectra of sunlight, favorably
It is absorbed in broad band, so as to improve efficiency；(2) increase built in field, improve injection efficiency, compared with homojunction, hetero-junctions tool
There is the built in field of bigger, make non-equilibrium few electron current of injection knot both sides increase, so as to increase open-circuit voltage and short circuit current flow；
(3) reduce raw silicon consumption, reduce cost, the development of hetero-junctions makes thin film technique come into being, so as to which battery is grown
In glass, ceramics even flexible substrate in low cost.
The content of the invention
The technical issues of to solve present in the prior art, the utility model provide a kind of by oxidic, transparent, conductive layers and N
The NIP type heterojunction solar batteries that type Window layer is combined into one, by being formed on the monosilicon with the material preparation of different band gap
Hetero-junctions improves the efficiency of solar cell, adds the utilization rate of solar energy.
The utility model is realized using following technical scheme：A kind of new heterojunction solar battery, including back electrode
Layer, the P layers on back electrode layer, the Window layer on P layers, the Window layer is to be doped with the ZnO film of Al；It mixes
The miscellaneous ZnO film of Al forms PN junctions with P layer.
Preferably, the thickness range of the ZnO film for being doped with Al is：20nm~600nm.
Preferably, described P layers is P-Si substrates.The heterojunction solar battery further includes I layers；Described I layers is to be arranged on
Layer of semiconductor material between P-Si substrates and ZnO film, the lattice constant and energy gap of the semi-conducting material are situated between
In P-Si substrates, ZnO film lattice constant and energy gap between.
The utility model N-ZnO/i layers/P-Si heterojunction solar batteries and the silicon substrate sun electricity that PN junction is made of homojunction
Pond is compared, and is had the following advantages that：
1st, oxidic, transparent, conductive layers and N-type Window layer are combined into one to form NIP type hetero-junctions, can not only make preparation work
Skill is simple, can also reduce the making of transparency conducting layer so as to reduce cost.
2nd, hetero-junctions is formed by the different material of energy gap, can broadening to the absorption spectra of sunlight, be conducive to wide range
Band absorbs, so as to improve the efficiency of solar cell.
3rd, compared with homojunction, hetero-junctions has the built in field of bigger, makes non-equilibrium few electron current of injection knot both sides
Increase, so as to increase open-circuit voltage and short circuit current flow.
4th, raw silicon consumption can be reduced, reduce cost, the development of hetero-junctions makes thin film technique come into being, so as to
Battery is grown on the glass, ceramics or even flexible substrate of low cost.N-ZnO/i layers/P-Si the hetero-junctions of the utility model
Solar cell has the characteristics that with material is few, low energy consumption, at low cost and simple for process.
Description of the drawings
Fig. 1 is existing PN types solar cell junction composition；
Fig. 2 is existing NIP types solar cell junction composition；
Fig. 3 is the utility model solar battery structure figure.
Specific embodiment
The utility model is described in further detail with reference to embodiment and attached drawing, but the implementation of the utility model
Mode is without being limited thereto.
Embodiment
The window layer material of solar cell does not require nothing more than that band gap is wide, and also requirement has higher conductance, to provide high built-in electricity
Field and good charge collection channel reduce series resistance.Transparent conductive oxide (TCO) film falls within optical material, it has
There is higher electrical conductivity, energy gap is big, there is higher transmissivity in visible light region, and near, middle infrared has high reflectivity,
There is ultraviolet cut-on characteristic, have stronger Decay Rate to microwave and with characteristic of semiconductor.
ZnO is a kind of II-VI group semiconductor material with wide forbidden band, is under normal pressure hexagonal wurtzite structure, belongs to hexagonal crystal system.
At room temperature, energy gap 3.3eV.Since the optical energy gap of ZnO is in more than 3.1eV, than the energy of visible ray
Greatly, so there is very high transmitance in visible-range, transmitance is more than 85%.
Undoped ZnO film is since intrinsic defect shows weaker N-type characteristic, after adulterating Al, electric conductivity
It can be significantly improved with N-type characteristic.After suitable A1 elements are mixed in ZnO film, the crystal structure of ZnO film is simultaneously
Do not change.The A1 elements of incorporation are instead of the position of part Zn atoms, and due to A1 atoms outermost layer, there are three electronics, Zn
There are two electronics, A1 for atom outermost layer3+Substitute Zn2+Afterwards, two valence electrons in A1 atoms are combined with O atom, remaining
One valence electron is separated from foreign atom, this valence electron is readily available energy, and transitting to conduction band from donor level becomes
Free electron, it is conductive so as to be participated under the action of external electric field.Therefore suitable incorporation A1 atoms can increase the content of net electronics,
So as to improve the electrical conductivity of film.
Al3+Doping there is no the crystal structure for changing ZnO, but Al3+Instead of part Zn in crystal structure2+Position
It puts.On the one hand, Al doping can influence surface topography, carrier number of film etc., and then influence the photo electric of AZO films
Energy；On the other hand, if Al doping concentrations are excessive, film can enhance the scattering power of electronics and light, so as to cause the light of film
Electrical property reduces.Therefore, the Al doping ratio scopes that the utility model is taken are：0.5%~8%, the thickness of AZO films after doping
Spending scope is：20nm~600nm.
After being deposited on the Al doping ZnO on P-Si substrates, AZO films are formed, AZO films can form PN junction with P-Si.
Since the energy gap of AZO films is larger, it is seen that the lower energy photon of light part can penetrate AZO film layers and by the sky of P-Si one sides
Between charged region collect, and AZO film contacts layer has the characteristic of metalloid, can improve the photoresponse of hetero-junctions.Therefore deposit
AZO films on P-Si substrates can both be used as light window layer, can also be used as semiconductor layer.
Presence due to surface state and boundary caused by lattice mismatch, coefficient of thermal expansion difference between AZO films and Si substrates
The factors such as planar defect change the architectural characteristic of space-charge region so that it is special that AZO/P-Si hetero-junctions shows nonideal electricity
Property.
If increasing by a layer lattice constant between P-Si and ZnO and semiconductor material that energy gap all falls between
Expect (I layers), i.e. the lattice constant of semi-conducting material is between the lattice constant of P-Si and the lattice constant of ZnO, energy gap
Also between the energy gap of P-Si and the energy gap of ZnO.It on the one hand can using the multipotency band structure of this bandwidth gradual change
To improve the utilization rate of sunlight；Moreover it is possible to realize that the direction of the spectral response generated in each area is identical, the sun is improved
The transfer efficiency of energy battery.On the other hand the lattice mismatch of the two can be alleviated, improve the crystal quality of ZnO film, improve and carry
The mobility of son is flowed, and inhibits the attenuation of hetero-junctions.
Increased semi-conducting material I layers of institute can be buffer layer or absorbed layer.If I layers are used as absorbed layer, one of special
Sign is exactly to have the higher absorption coefficient of light, and main light is absorbed at I layers, and the photo-generated carrier in this layer can be received effectively
Collection.Can there are cadmium telluride, GaAs, cadmium sulfide etc. as the material for preparing of absorbed layer.In addition, in order to reduce the shadow of interfacial state
It ringing, can one layer of buffer layer be added between the interface of two kinds of materials by the technique of various passivation, i.e. I layers is used as buffer layer,
The dangling bonds on heterojunction boundary are reduced, so as to reducing interface state density.
I layers are inserted into AZO/P-Si hetero-junctions can not only reduce interface state density, reduce answering for solar cell interface
Electric current is closed, so as to greatly improve the open-circuit voltage of solar cell, the transport and collection of photo-generated carrier can also be enhanced, reduce it
Recombination rate, so as to improve the performance of heterojunction solar battery.
Above-described embodiment is the preferable embodiment of the utility model, but the embodiment of the utility model and from above-mentioned
The limitation of embodiment, the change made under other any Spirit Essences and principle without departing from the utility model are modified, replaced
Generation, combination simplify, and should be equivalent substitute mode, are included within the scope of protection of the utility model.
Claims (6)
1. a kind of new heterojunction solar battery, P layers including back electrode layer, on back electrode layer, on P layers
Window layer, which is characterized in that the Window layer is to be doped with the ZnO film of Al；The ZnO film of Al is doped with to be formed with P layer
PN junction.
2. heterojunction solar battery according to claim 1, which is characterized in that the thickness of the ZnO film for being doped with Al
Spending scope is：20nm~600nm.
3. heterojunction solar battery according to claim 1, which is characterized in that described P layers is P-Si substrates.
4. heterojunction solar battery according to claim 3, which is characterized in that the heterojunction solar battery further includes I
Layer；Described I layers is is arranged on layer of semiconductor material between P-Si substrates and ZnO film, the lattice of the semi-conducting material
Constant and energy gap between P-Si substrates, ZnO film lattice constant and energy gap between.
5. heterojunction solar battery according to claim 4, which is characterized in that described I layers is buffer layer or absorbed layer.
6. heterojunction solar battery according to claim 4, which is characterized in that it is I layers described prepare material for cadmium telluride,
GaAs or cadmium sulfide.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109675542A (en) * | 2018-11-29 | 2019-04-26 | 长春理工大学 | Utilize the self-powered semiconductor photoelectrocatalysielectrode device of PN junction |
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2017
- 2017-09-21 CN CN201721213356.9U patent/CN207458972U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109675542A (en) * | 2018-11-29 | 2019-04-26 | 长春理工大学 | Utilize the self-powered semiconductor photoelectrocatalysielectrode device of PN junction |
| CN109675542B (en) * | 2018-11-29 | 2021-11-26 | 长春理工大学 | Semiconductor photoelectric catalytic device self-powered by PN junction |
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