CN204257598U - 一种大直径区熔用多晶棒料的清洗装置 - Google Patents
一种大直径区熔用多晶棒料的清洗装置 Download PDFInfo
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- CN204257598U CN204257598U CN201420578291.8U CN201420578291U CN204257598U CN 204257598 U CN204257598 U CN 204257598U CN 201420578291 U CN201420578291 U CN 201420578291U CN 204257598 U CN204257598 U CN 204257598U
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- large diameter
- acid corrosion
- zone melting
- polycrystalline bar
- diameter zone
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- 238000004140 cleaning Methods 0.000 title claims abstract description 32
- 238000004857 zone melting Methods 0.000 title claims abstract description 22
- 239000002253 acid Substances 0.000 claims abstract description 56
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 42
- 230000007797 corrosion Effects 0.000 claims abstract description 40
- 238000005260 corrosion Methods 0.000 claims abstract description 40
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 17
- 238000001035 drying Methods 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000005096 rolling process Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229940023184 after bite Drugs 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 235000011194 food seasoning agent Nutrition 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
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- Cleaning By Liquid Or Steam (AREA)
Abstract
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Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201420578291.8U CN204257598U (zh) | 2014-09-30 | 2014-09-30 | 一种大直径区熔用多晶棒料的清洗装置 |
Applications Claiming Priority (1)
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CN201420578291.8U CN204257598U (zh) | 2014-09-30 | 2014-09-30 | 一种大直径区熔用多晶棒料的清洗装置 |
Publications (1)
Publication Number | Publication Date |
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CN204257598U true CN204257598U (zh) | 2015-04-08 |
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CN201420578291.8U Active CN204257598U (zh) | 2014-09-30 | 2014-09-30 | 一种大直径区熔用多晶棒料的清洗装置 |
Country Status (1)
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CN (1) | CN204257598U (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105665328A (zh) * | 2016-01-11 | 2016-06-15 | 魏会芳 | 一种棒料表面清洁装置 |
CN111151504A (zh) * | 2020-01-19 | 2020-05-15 | 洛阳中硅高科技有限公司 | 多晶硅清洗机和清洗多晶硅的方法 |
CN114855262A (zh) * | 2022-07-05 | 2022-08-05 | 江苏鑫华半导体科技股份有限公司 | 用于区熔的多晶硅棒的预处理方法 |
-
2014
- 2014-09-30 CN CN201420578291.8U patent/CN204257598U/zh active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105665328A (zh) * | 2016-01-11 | 2016-06-15 | 魏会芳 | 一种棒料表面清洁装置 |
CN105665328B (zh) * | 2016-01-11 | 2017-08-01 | 王志强 | 一种棒料表面清洁装置 |
CN111151504A (zh) * | 2020-01-19 | 2020-05-15 | 洛阳中硅高科技有限公司 | 多晶硅清洗机和清洗多晶硅的方法 |
CN114855262A (zh) * | 2022-07-05 | 2022-08-05 | 江苏鑫华半导体科技股份有限公司 | 用于区熔的多晶硅棒的预处理方法 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181105 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191227 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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TR01 | Transfer of patent right | ||
CP03 | Change of name, title or address |
Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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CP03 | Change of name, title or address |