CN204156717U - With the gate drive circuit of insulated gate device - Google Patents
With the gate drive circuit of insulated gate device Download PDFInfo
- Publication number
- CN204156717U CN204156717U CN201420676539.4U CN201420676539U CN204156717U CN 204156717 U CN204156717 U CN 204156717U CN 201420676539 U CN201420676539 U CN 201420676539U CN 204156717 U CN204156717 U CN 204156717U
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- insulated gate
- gate device
- terminal
- drive circuit
- state
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Abstract
The utility model discloses a kind of gate drive circuit with insulated gate device, comprise: a capacitor, its first terminal is connected with driving voltage, and the second terminal is connected with insulated gate device, when driving voltage makes maintenance insulated gate device be in " connection " state, store electric charge; A loop, connects the output of first terminal and insulated gate device, when insulated gate device becomes "off" state from " connection " state, provides cut-off back bias voltage, avoids insulated gate device to occur the false state connected; A voltage stabilizing didoe, is connected with the output of the second terminal with insulated gate device, limits the value of the forward of driving voltage, thus have adjusted cut-off back bias voltage; A blocking diode and voltage stabilizing didoe differential concatenation, when insulated gate device is in "off" state, stop voltage stabilizing didoe to be communicated with.The beneficial effects of the utility model are: provide a kind of driving method and a kind ofly apply the method for this circuit as switching mode.
Description
Technical field
The utility model relates to a kind of gate drive circuit, particularly a kind of gate drive circuit with insulated gate device.
Background technology
Insulated gate device, if mos field effect transistor, mos field effect transistor, insulated gate two-staged transistor, metal-oxide semiconductor (MOS) control thyristor are common electricity components, is widely used in circuit.And manufacturing process is fairly simple, flexible and convenient to use, be very beneficial for Highgrade integration.
Development along with the high efficiency power supply changeover device of high power density is a fresh target of field of power electronics, reduce energy-storage travelling wave tube model and increase power density, can high frequency conversion insulated gate device power conversion circuit in enjoy high praise.And the high frequency conversion of insulated gate device relies on gate current to realize.
Summary of the invention
The purpose of this utility model is to provide a kind of gate drive circuit with insulated gate device.Provide a kind of driving method and a kind ofly apply the method for this circuit as switching mode.
For achieving the above object, the utility model adopts following technical scheme:
With a gate drive circuit for insulated gate device, comprising: a capacitor, its first terminal is connected with driving voltage, and the second terminal is connected with insulated gate device.When driving voltage makes maintenance insulated gate device be in " connection " state, store electric charge; A loop, connects the output of first terminal and insulated gate device.When insulated gate device becomes "off" state from " connection " state, provide cut-off back bias voltage, avoid insulated gate device to occur the false phenomenon connected.A voltage stabilizing didoe, is connected with the output of the second terminal with insulated gate device, limits the value of the forward of driving voltage, thus have adjusted cut-off back bias voltage.A blocking diode and voltage stabilizing didoe differential concatenation, when insulated gate device is in "off" state, stop voltage stabilizing didoe to be communicated with.
Preferably: also comprise a door and drive, be connected between described driving voltage and first terminal, described insulated gate device can be kept to be in " connection " state for it and insulated gate device forms path by " connection " state to during "off" State Transferring.
Preferably: also comprise a resistance, be connected to the terminal of described gate drive circuit and insulated gate device, for the electric current be stored in gate drive circuit provides the path of electric discharge.
Preferably: described blocking diode is a voltage stabilizing didoe.
Preferably: also comprise a current-limiting resistance, be connected between driving voltage and first terminal, the electric current of the voltage stabilizing didoe described in restriction arrival.
Preferably: also comprise a resistance, connect the output of the second terminal and described insulated gate device, play dividing potential drop effect.
Preferably: described insulated gate device can be that field-effect transistor, insulated gate two-staged transistor or metal-oxide semiconductor (MOS) control thyristor.
Preferably: described door drives, and be made up of two triodes, upper pipe is NPN type triode, and lower pipe is PNP type triode.
The beneficial effects of the utility model are: provide a kind of driving method and a kind ofly apply the method for this circuit as switching mode.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the utility model with the gate drive circuit of insulated gate device.
In figure: NPN type triode 1, PNP type triode 2, current-limiting resistance 3, capacitor 4, voltage stabilizing didoe 5, voltage stabilizing didoe 6, resistance 7, resistance 8, the grid 9 of insulated gate device, the output 10 of insulated gate device, insulated gate device 11, driving voltage 12, door drive 13.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further detail:
Fig. 1 is the schematic diagram of the utility model with the gate drive circuit of insulated gate device, and capacitor 4 has two terminals.Door drive 13 is in series by a NPN type triode 1 and PNP type triode; The first terminal of described capacitor 4 is connected with driving voltage 12 with NPN type triode 1 by a current-limiting resistance 3; Second terminal is connected with the grid 9 of insulated gate device by a resistance 8.
Also be provided with a loop, have the output 10 of first terminal to insulated gate device of described capacitor 4.Loop comprises a current-limiting resistance 3, PNP type triode 2.When insulated gate device 11 by " connection " state to "off" State Transferring time, formed path.
Also be provided with a resistance 7, be connected with the output 10 of insulated gate element with the grid 9 of insulated gate device, for being stored in the current discharge in described insulated gate device 11, voltage stabilizing didoe 5 and voltage stabilizing didoe 6 are that Opposite direction connection is between capacitor 4 second terminal and the output 10 of insulated gate device.
Described NPN type triode 1 is connected with driving voltage 12, and electric current, by current-limiting resistance 3, reaches the first terminal of described capacitor 4.Driving voltage 12 charges for capacitor 4, and resistance 8 arrives the grid 9 of the insulated gate device of insulated gate device 11, because insulated gate device 11 is in " connection " state by the driving of door drive 13, current-limiting resistance 3 limits the electric current arriving voltage stabilizing didoe 5.Voltage stabilizing didoe 5 described conversely limits the negative value of driving voltage 12, thus, have adjusted the voltage of described capacitor 4.
When insulated gate device 11 is in " connection " state, described capacitor 4 have collected the voltage exceeding insulated gate device 11 rated voltage.
When insulated gate device 11 by " connection " state to "off" State Transferring time, described NPN type triode 1 is closed, and described PNP type triode 2 is connected and formed path.Along with the first terminal of described capacitor 4 is in ground potential, the capacitor 4 storing electric charge defines back bias voltage.The negative value of cut-off back bias voltage is controlled by voltage stabilizing didoe 6.Cut-off back bias voltage in loop, reaches the grid 9 of insulated gate device by resistance 8, the electric discharge of cut-off back bias voltage makes insulated gate device 11 "off".Thus the vacation avoiding insulated gate device 11 connects phenomenon.
Although embodiment of the present utility model is open as above, but it is not restricted to listed in specification and execution mode utilization, it can be applied to various applicable field of the present utility model completely, for those skilled in the art, can easily realize other amendment, therefore do not deviating under the universal that claim and equivalency range limit, the utility model is not limited to specific details and illustrates here and the legend described.
Claims (8)
1. the gate drive circuit with insulated gate device, it is characterized in that: a capacitor, its first terminal is connected with driving voltage, and the second terminal is connected with insulated gate device, when driving voltage makes maintenance insulated gate device be in " connection " state, store electric charge; A loop, connects the output of first terminal and insulated gate device, when insulated gate device becomes "off" state from " connection " state, provides cut-off back bias voltage, avoids insulated gate device to occur the false phenomenon connected; A voltage stabilizing didoe, is connected with the output of the second terminal with insulated gate device, limits the forward value of driving voltage, thus have adjusted cut-off back bias voltage; A blocking diode and voltage stabilizing didoe differential concatenation, when insulated gate device is in "off" state, stop voltage stabilizing didoe to be communicated with.
2. the gate drive circuit with insulated gate device according to claim 1, it is characterized in that: also comprise a door and drive, be connected between described driving voltage and first terminal, described insulated gate device can be kept to be in " connection " state for it and insulated gate device forms path by " connection " state to during "off" State Transferring.
3. according to the gate drive circuit with insulated gate device described in claim 1, it is characterized in that: also comprise a resistance, be connected to the terminal of described gate drive circuit and insulated gate device, for the electric current be stored in gate drive circuit provides the path of electric discharge.
4. according to the gate drive circuit with insulated gate device described in claim 1, it is characterized in that: described blocking diode is a voltage stabilizing didoe.
5. according to the gate drive circuit with insulated gate device described in claim 1, it is characterized in that: also comprise a current-limiting resistance, be connected between driving voltage and first terminal, the electric current of the voltage stabilizing didoe described in restriction arrives.
6. according to the gate drive circuit with insulated gate device described in claim 1, it is characterized in that: also comprise a resistance, connect the output of the second terminal and described insulated gate device, play dividing potential drop effect.
7. according to the gate drive circuit with insulated gate device described in claim 1, it is characterized in that: described insulated gate device can be that mos field effect transistor, insulated gate two-staged transistor or metal-oxide semiconductor (MOS) control thyristor.
8. the gate drive circuit with insulated gate device according to claim 2, is characterized in that: described door drives, and be made up of two triodes, upper pipe is NPN type triode, and lower pipe is PNP type triode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420676539.4U CN204156717U (en) | 2014-11-13 | 2014-11-13 | With the gate drive circuit of insulated gate device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420676539.4U CN204156717U (en) | 2014-11-13 | 2014-11-13 | With the gate drive circuit of insulated gate device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204156717U true CN204156717U (en) | 2015-02-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420676539.4U Expired - Fee Related CN204156717U (en) | 2014-11-13 | 2014-11-13 | With the gate drive circuit of insulated gate device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204156717U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105406692A (en) * | 2015-12-11 | 2016-03-16 | 深圳市瑞凌实业股份有限公司 | IGBT driving circuit |
| CN108270344A (en) * | 2017-01-03 | 2018-07-10 | 意法半导体株式会社 | Level shift circuit |
-
2014
- 2014-11-13 CN CN201420676539.4U patent/CN204156717U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105406692A (en) * | 2015-12-11 | 2016-03-16 | 深圳市瑞凌实业股份有限公司 | IGBT driving circuit |
| CN108270344A (en) * | 2017-01-03 | 2018-07-10 | 意法半导体株式会社 | Level shift circuit |
| US10418987B2 (en) | 2017-01-03 | 2019-09-17 | Stmicroelectronics Kk | Level shifting circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150211 Termination date: 20161113 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |