CN204031117U - The power transistor of self-adjusting temperature - Google Patents
The power transistor of self-adjusting temperature Download PDFInfo
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- CN204031117U CN204031117U CN201420421407.7U CN201420421407U CN204031117U CN 204031117 U CN204031117 U CN 204031117U CN 201420421407 U CN201420421407 U CN 201420421407U CN 204031117 U CN204031117 U CN 204031117U
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Abstract
The power transistor of self-adjusting temperature, comprise power transistor, also comprise step-down NMOS pipe, the source of described step-down NMOS pipe is connected respectively base stage and the signal input part of power transistor with leaking, the grid of described step-down NMOS pipe is by the detection transistor ground connection of the diode type of attachment of one or more series connection, the grid of step-down NMOS pipe connects signal input part by current-limiting resistance simultaneously, and described detection transistor is positioned at the heat radiation region of power transistor.The power transistor of self-adjusting temperature described in the utility model, only utilizes additional minority device can realize the adjustment to power tube caloric value, makes the power tube can uninterrupted work, avoids meaningless shutdown loss; Pin place at signal input part has also realized certain antistatic protection function simultaneously, has improved the functional reliability of signal input part.
Description
Technical field
The utility model belongs to field of semiconductor manufacture, relates to the Design and manufacture of power tube, particularly relates to a kind of power transistor of self-adjusting temperature.
Background technology
Semiconductor power device is the single device that possesses output relatively high power ability that utilizes semi-conducting material and semiconductor fabrication process manufacture, be widely used in amplifier, Switching Power Supply or drive circuit, in existing application circuit solution, conventionally all need multiple power devices, can be respectively as uses such as amplifying signal, power switch and output stages.
Along with the progress of semiconductor technology, minimum feature breaks through micron level already, arrive nanometer scale, due to constantly dwindling of live width, the power density of semiconductor chip, particularly power device improves constantly, and single semiconductor chip can provide ampere level even higher output current, operating current and the caloric value of chip constantly increase, and the encapsulation to power tube and use form severe challenge.
Although there are the various temperature protection circuits for chip overheating; but depend on operational amplifier, comparator or reference voltage realizes more; design is complicated and need to take suitable area; for the power device of single encapsulation; while thering is no the module such as reference voltage, comparator, be difficult to realize; and existing temperature protection circuit mostly is and closes at once power device itself in the time that temperature exceedes set point, can not carry out limited adjustment to temperature and make power device continue normal work.
Utility model content
There is no special temperature protection circuit for overcoming the power tube of prior art, or existing temperature protection circuit can not carry out limited adjustment to power tube, ensure the technological deficiency of device continuous firing, the utility model discloses a kind of power transistor of self-adjusting temperature.
The power transistor of self-adjusting temperature described in the utility model, comprise power transistor, it is characterized in that, also comprise step-down NMOS pipe, the source of described step-down NMOS pipe is connected respectively base stage and the signal input part of power transistor with leaking, the grid of described step-down NMOS pipe is by the detection transistor ground connection of the diode type of attachment of one or more series connection, the grid of step-down NMOS pipe connects signal input part by current-limiting resistance simultaneously, and described detection transistor is positioned at the heat radiation region of power transistor.
Concrete, described step-down metal-oxide-semiconductor is depletion type NMOS pipe, described detection transistor quantity is one.
Preferably, described step-down metal-oxide-semiconductor is enhancement mode NMOS pipe, and described detection transistor quantity is more than 2.
Preferably, also comprise DC power supply, described current-limiting resistance is not connected with signal input part, and connects DC power output end.
Further, also comprise the electrostatic protection device being connected between signal input part and ground.
Concrete, described detection transistor has multiple, lays respectively at the zones of different of power transistor.
Concrete, the resistance of described current-limiting resistance is 50K to 1 million.
The power transistor of self-adjusting temperature described in the utility model, only utilizes additional minority device can realize the adjustment to power tube caloric value, makes the power tube can uninterrupted work, avoids meaningless shutdown loss; Pin place at signal input part has also realized certain antistatic protection function simultaneously, has improved the functional reliability of signal input part.
Brief description of the drawings
Fig. 1 is a kind of embodiment structural representation of the power transistor of a kind of self-adjusting temperature described in the utility model;
In figure, Reference numeral name is called: IN-signal input part OUT-power transistor output T0-power transistor T1-first detection transistor T2-the second detection transistor, R-current-limiting resistance, M1-step-down NMOS pipe M2-electrostatic protection device VDD-DC power supply.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in further detail.
The power transistor of the utility model self-adjusting temperature, comprise power transistor T0, it is characterized in that, also comprise step-down NMOS pipe M1, the source of described step-down NMOS pipe is connected respectively base stage and the signal input part IN of power transistor with leaking, the grid of described step-down NMOS pipe is by the detection transistor ground connection of the diode type of attachment of one or more series connection, the grid of step-down NMOS pipe connects signal input part by current-limiting resistance R simultaneously, and described detection transistor is positioned at the heat radiation region of power transistor T0.
When work, signal input part is high level, by obtain opening the voltage of step-down NMOS pipe after current-limiting resistance at step-down NMOS tube grid, step-down NMOS pipe is opened, and power transistor base stage obtains certain voltage and current and makes its unlatching.Suitably select detection transistor number and current-limiting resistance resistance, guaranteed output transistor can normally be worked.Adopt signal input part to drive step-down NMOS pipe, can no longer additionally increase DC power supply, simultaneously, because signal input part is connected ground wire by current-limiting resistance with detection transistor, form an electrostatic defending path, because the current capacity of resistance and triode is under high pressure all very strong, therefore can no longer adopt extra electrostatic protection device to signal input part.
For example, in the time that step-down NMOS pipe is common enhancement mode pipe, because each detection transistor is connecting into diode form, when base stage is connected with collector electrode, pressure drop is roughly in 0.7V left and right; Open for ensureing step-down NMOS pipe, should at least use the stack of two detection transistor to make the step-down NMOS tube grid voltage can be more than 1.5V, current-limiting resistance resistance should be reduced simultaneously, but for reducing the power consumption on detection transistor and current-limiting resistance, 50-200K scope can be arranged on.
Preferred execution mode is for selecting step-down NMOS pipe for depletion type pipe, because depletion type is still to open and to maintain lower conduction voltage drop at 1 o'clock in grid voltage, therefore while selecting to exhaust pipe, detection transistor can only need one, power transistor still can normally be worked, now can suitably increase current-limiting resistance resistance to reduce power consumption, for example select R resistance all can in 500K-1 megohm, can certainly select multiple detection transistor stacks, to increase the grid voltage adjusting range of temperature sense to step-down NMOS tube grid.
In the time that power tube causes temperature rise due to the increase of output power, VBE value is negative temperature coefficient, the VBE adjusting range of each detection transistor is conventionally at 2 millivolts about every degree Celsius, and detection transistor senses that after the rising of temperature, VBE constantly declines, step-down NMOS tube grid voltage drop, its conduction voltage drop is increased, reduce at power transistor base voltage, thereby power crystal tube current is reduced, power reduces, and temperature decreases.The utility model power excessive cause temperature rise and make temperature protection adjust time; not simply to close power device; but reduce power tube operating current by reducing power device base voltage, and make the power tube can uninterrupted work, avoid meaningless shutdown loss.
When using when multiple detection transistor, detection transistor can be arranged in to the zones of different of power transistor, for example two side positions or other are around the symmetrical location arrangements detection transistor of power transistor.
In the time of signal input part underpower, step-down NMOS pipe can adopt independent DC power supply driving grid, and now current-limiting resistance is not connected with signal input part, and connects DC power output end.Now, because signal input part no longer possesses foregoing electrostatic defending path, therefore need to arrange the electrostatic protection device being connected between signal input part and ground, the M2 of GGNMOS form as shown in Figure 1.
Previously described is each preferred embodiment of the present utility model, preferred implementation in each preferred embodiment is if not obviously contradictory or taking a certain preferred implementation as prerequisite, each preferred implementation arbitrarily stack combinations is used, design parameter in described embodiment and embodiment is only the utility model proof procedure for clear statement utility model people, not in order to limit scope of patent protection of the present utility model, scope of patent protection of the present utility model is still as the criterion with its claims, the equivalent structure that every utilization specification of the present utility model and accompanying drawing content are done changes, in like manner all should be included in protection range of the present utility model.
Claims (7)
1. the power transistor of self-adjusting temperature, comprise power transistor, it is characterized in that, also comprise step-down NMOS pipe, the source of described step-down NMOS pipe is connected respectively base stage and the signal input part of power transistor with leaking, the grid of described step-down NMOS pipe is by the detection transistor ground connection of the diode type of attachment of one or more series connection, and the grid of step-down NMOS pipe connects signal input part by current-limiting resistance simultaneously, and described detection transistor is positioned at the heat radiation region of power transistor.
2. the power transistor of self-adjusting temperature as claimed in claim 1, is characterized in that, described step-down metal-oxide-semiconductor is depletion type NMOS pipe, and described detection transistor quantity is one.
3. the power transistor of self-adjusting temperature as claimed in claim 1, is characterized in that, described step-down metal-oxide-semiconductor is enhancement mode NMOS pipe, and described detection transistor quantity is more than 2.
4. the power transistor of self-adjusting temperature as claimed in claim 1, is characterized in that, also comprises DC power supply, and described current-limiting resistance is not connected with signal input part, and connects DC power output end.
5. the power transistor of the self-adjusting temperature as described in claim 1 or 4, is characterized in that, also comprises the electrostatic protection device being connected between signal input part and ground.
6. the power transistor of self-adjusting temperature as claimed in claim 1, is characterized in that, described detection transistor has multiple, lays respectively at the zones of different of power transistor.
7. the power transistor of self-adjusting temperature as claimed in claim 1, is characterized in that, the resistance of described current-limiting resistance is 50K to 1 million.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420421407.7U CN204031117U (en) | 2014-07-29 | 2014-07-29 | The power transistor of self-adjusting temperature |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420421407.7U CN204031117U (en) | 2014-07-29 | 2014-07-29 | The power transistor of self-adjusting temperature |
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| CN204031117U true CN204031117U (en) | 2014-12-17 |
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| CN201420421407.7U Active CN204031117U (en) | 2014-07-29 | 2014-07-29 | The power transistor of self-adjusting temperature |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109699097A (en) * | 2017-10-24 | 2019-04-30 | 佛山市顺德区美的电热电器制造有限公司 | The overheat abnormality eliminating method and device of electromagnetic heating cooking utensil and its IGBT |
| US10833668B2 (en) | 2019-03-07 | 2020-11-10 | Analog Devices International Unlimited Company | Integrated and distributed over temperature protection for power management switches |
-
2014
- 2014-07-29 CN CN201420421407.7U patent/CN204031117U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109699097A (en) * | 2017-10-24 | 2019-04-30 | 佛山市顺德区美的电热电器制造有限公司 | The overheat abnormality eliminating method and device of electromagnetic heating cooking utensil and its IGBT |
| CN109699097B (en) * | 2017-10-24 | 2021-07-20 | 佛山市顺德区美的电热电器制造有限公司 | Electromagnetic heating cooking utensil and IGBT overheating abnormity processing method and device thereof |
| US10833668B2 (en) | 2019-03-07 | 2020-11-10 | Analog Devices International Unlimited Company | Integrated and distributed over temperature protection for power management switches |
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