CN207150167U - Applied to the reverse-connection protection circuit in unicoil fans drive chip - Google Patents
Applied to the reverse-connection protection circuit in unicoil fans drive chip Download PDFInfo
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- CN207150167U CN207150167U CN201720918366.6U CN201720918366U CN207150167U CN 207150167 U CN207150167 U CN 207150167U CN 201720918366 U CN201720918366 U CN 201720918366U CN 207150167 U CN207150167 U CN 207150167U
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- pmos transistor
- protection circuit
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Abstract
It the utility model is related to applied to the reverse-connection protection circuit in unicoil fans drive chip.The reverse-connection protection circuit is connected between chip exterior power end and chip internal power end, and input is connected with external electrical source, and output end is connected with chip internal power end.The utility model illustrates two embodiments, and the reverse-connection protection circuit in embodiment 1 is made up of a PMOS transistor, a voltage-stabiliser tube and a resistance；Reverse-connection protection circuit in embodiment 2 is made up of a PMOS transistor, a voltage-stabiliser tube, a resistance and a Schottky diode.PMOS transistor in two embodiments in normal work all in deep linear zone, it is low in energy consumption, save area, reduce chip cost on the premise of chip energy normal work is ensured.
Description
Technical field
It the utility model is related to the reverse-connection protection circuit applied to unicoil fans drive chip.
Background technology
Unicoil fans drive chip is using the driving chip of built-in Hall come induced field situation of change so as to controlling list
Coil current commutates.Output driving structure is passed through frequently with H bridge structures, such as Fig. 1.202 and 203 be PMOS power tubes, 204 and 205
It is NMOS power tubes, 206 be external unicoil.When 202 and 205 turn on, 206 produce the drive circuit of right direction；203 Hes
During 204 conducting, 206 produce the driving current of left direction, make fan continue to rotate by the commutation of 206 driving currents.
During the use of unicoil fans drive chip, it is easy to supply pin and the reversed situation of lower margin occur.Such as
Fruit chip does not have reversal connection protection function, then can be burnt at once because there is very big electric current, particularly H bridges structure division.
The reverse connecting protection measure of unicoil fans drive chip at present is an external diode 207 and shunt capacitance 208.
In normal work, diode 207 turns on, the filtering clutter of shunt capacitance 208.In reversal connection, diode 207 ends, and blocks ground
Hold the current path of power end.Due to exporting the operating current of H bridge structures, i.e. driving current on unicoil 206 is very big, this
Mean that the operating current for flowing through diode 207 is also very big, the energy consumption of whole device is considerably increased, to reduce diode
207 energy consumption must increase area, reduce the voltage that diode 207 is consumed, and the forward conduction electricity of diode 207 itself
Pressure can increase the lowest starting voltage of chip, so external diode and electric capacity can considerably increase the cost of manufacture of chip, increase
Add the complexity of operation, reduce the reliability of chip.
Utility model content
In order to solve the above problems, the utility model provides an active reverse-connection protection circuit, is integrated in chip, is connected to core
Between piece external electrical source and chip internal power end.Active reverse-connection protection circuit input is connected with external electrical source, output
End is connected with chip internal power end.
The utility model, which provides active reverse-connection protection circuit, includes a PMOS transistor, a voltage-stabiliser tube and a resistance.PMOS
The drain terminal of transistor connects external electrical source, and backgate is connected with the negative terminal of source and voltage-stabiliser tube with chip internal power end；Voltage-stabiliser tube
Anode be connected with the grid end of PMOS transistor and one end of resistance；The other end of resistance is connected to ground terminal.
The utility model, which is also provided with source reverse-connection protection circuit, includes a PMOS transistor, a voltage-stabiliser tube, a resistance and one
Schottky diode.The drain terminal of PMOS transistor is connected with external electrical source, backgate and source and the negative terminal and chip of voltage-stabiliser tube
The power end of internal H bridges structure division is connected；The anode of voltage-stabiliser tube is connected with one end of the grid end of PMOS transistor and resistance；Electricity
The other end of resistance is connected to ground terminal.The anode of Schottky diode is connected with external electrical source, and negative terminal is with chip internal except H bridge knots
Common electrical source outside structure part is connected.
Further, the breakdown reverse voltage of above-mentioned Schottky diode is more than the maximum operating voltage of chip.
Further, above-mentioned unicoil fans drive chip is an integrated circuit, and unicoil is not integrated, and is configured at this
The outside of integrated circuit.
Brief description of the drawings
Fig. 1 is the unicoil fans drive chip schematic diagram of existing external reversal connection protection function.
Fig. 2 is the unicoil fans drive chip schematic diagram of the integrated reversal connection protection function in the utility model embodiment 1.
Fig. 3 is the unicoil fans drive chip schematic diagram of the integrated reversal connection protection function in the utility model embodiment 2.
Embodiment
Specific embodiment of the present utility model is described below, but embodiment is only that the utility model is carried out
Illustrate rather than restriction.
Embodiment 1
As shown in Fig. 2 a kind of reverse-connection protection circuit is present embodiments provided, including PMOS transistor 307, voltage-stabiliser tube 308
It is two parasitic diodes between the drain terminal source of PMOS transistor 307 and backgate end with resistance 309,310 and 311.PMOS is brilliant
The drain terminal of body pipe 307 connects external electrical source, and backgate is connected with the negative terminal of source and voltage-stabiliser tube 308 with chip internal power end；Surely
The anode of pressure pipe 308 is connected with the grid end of PMOS transistor 307 and one end of resistance 309；The other end of resistance 309 is connected to ground
End.The reverse-connection protection circuit is located between external electrical source VDD and chip internal power end LVDD.External electrical source VDD passes through
PMOS transistor 307 provides voltage to chip internal power end LVDD, and the grid of PMOS transistor 307 is connected by resistance 309
To ground.And voltage-stabiliser tube 308 is placed between the source of PMOS transistor 307 and grid end, protect the grid end of PMOS transistor 307 will not be by
Breakdown.
(non-reversal connection) in normal state, all electric currents of chip all flow through from PMOS transistor 307, in order to reduce power consumption,
The area of PMOS transistor 307 is larger, makes chip internal power supply LVDD value as far as possible close to external power source VDD, now PMOS crystal
Pipe 307 is in deep linear zone.
It is supply voltage under reversal connection state, at GND ends, the input of vdd terminal no-voltage.The grid end of PMOS transistor 307 uprises,
Therefore pipe and it is not turned on.And its source is connected with backgate end, source and the parasitic diode 311 at backgate end do not turn on,
And the reverse cut-off of the parasitic diode 310 of backgate end and drain terminal, it ensure that chip does not have current path between power supply and ground,
Prevent the generation of high current.
In the present embodiment, PMOS transistor 307 is different from conventional connection, specifically：PMOS transistor 307 is by drain terminal
With source transposition, drain terminal is connected on external electrical source VDD, and source and backgate terminate to the internal electric source end of low voltage
LVDD.Source and backgate end are connected to LVDD, can avoid the parasitic diode of itself of MOS transistor 307 under reversal connection state
Being conducting to vdd terminal causes high current generation to burn chip.Drain terminal is connected with VDD, and grid end is connected with one end of resistance 309, electricity
Hinder it is another terminate to ground, 307 unlatchings can be ensured in normal state, can also be avoided under reversal connection state, 307 grid end quilt
Breakdown.
This structure is advantageous in that：It is simple in construction, and diode is replaced to realize reverse connecting protection work(with PMOS transistor
Can, both can greatly save chip area under conditions of equal power consumption is consumed, with PMOS transistor, reduce cost.
Embodiment 2
As shown in figure 3, the present embodiment also provides a kind of reverse-connection protection circuit, the difference of itself and embodiment 1 is：Chip
The interior remainder circuit in addition to H bridge structures is powered by Schottky diode.
In the present embodiment, active reverse-connection protection circuit includes PMOS transistor 408, voltage-stabiliser tube 409, resistance 410 and Xiao
Special based diode 407.PMOS transistor 408 is identical with 307 connections in embodiment 1, i.e., drain terminal is connected with external electrical source, the back of the body
Grid are connected with the negative terminal of source and voltage-stabiliser tube 409 with the power end LVDD2 of chip internal H bridge structure divisions；Voltage-stabiliser tube 409 is just
End is connected with the grid end of PMOS transistor 408 and one end of resistance 410；The other end of resistance 410 is connected to ground terminal.The pole of Schottky two
The anode of pipe 407 is connected with external electrical source VDD, negative terminal and common electrical source of the chip internal in addition to H bridge structure divisions
LVDD1 is connected.
(non-reversal connection) in normal state, PMOS transistor 408 are in deep linear zone, the operating current of H bridge structure divisions,
Driving current i.e. on unicoil is provided by PMOS transistor 408.The operating current of the part is far longer than chip remainder
Quiescent current, in order to reduce power consumption, the area that PMOS transistor 408 takes is larger, reduces the voltage that it is consumed.Chip remaining
The operating current of circuit is provided by Schottky diode 407, because this portion of electrical current very little, therefore Schottky diode 407 is simultaneously
Many areas are not take up, and the forward conduction voltage of Schottky diode is relatively low compared to general-purpose diode, for minimum startup
The influence of voltage is smaller.
It is supply voltage under reversal connection state, at GND ends, the input of vdd terminal no-voltage.Schottky diode 407 is reversely cut
Only；PMOS transistor 408 is not opened, and itself parasitic diode does not turn on vdd terminal, ensure that chip does not have between power supply and ground
There is current path, prevent the generation of high current.
This structure is advantageous in that：When unicoil driving current commutates, due to driving current size in H bridge structures
Change can make internal electric source end LVDD2 have voltage swing fluctuation.In the case of higher to circuit requirement, make LVDD2 direct
Powered to chip remaining circuit, the stability of partial function may be influenceed.Individually give chip remaining electricity with Schottky diode
Road power supply can make chip partial function more stable, be not driven the influence of electric current commutation change.
In summary, by two embodiments of the present utility model, can be saved while reversal connection protection function is realized
Chip area, reduce cost.
It is described above, only it is preferred embodiment of the present utility model, formal limit not any to the present embodiment
System.Any those skilled in the art, without departing from the scope of the technical proposal of the invention, it may be by the disclosure above
Methods and technical content makes many possible changes and modifications to the present invention, or is revised as the equivalence enforcement of equivalent variations
Example, still fall within the utility model protection in the range of.
Claims (4)
1. applied to the reverse-connection protection circuit in unicoil fans drive chip, it is characterised in that the reverse-connection protection circuit is connected to core
Between piece external electrical source and chip internal power end, input is connected with external electrical source, output end and chip internal power supply
End is connected.
2. reverse-connection protection circuit according to claim 1, one of which structure include a PMOS transistor, a voltage-stabiliser tube and
One resistance, it is characterised in that the drain terminal of PMOS transistor connects external electrical source, backgate and source and the negative terminal and chip of voltage-stabiliser tube
Internal electric source end is connected, and the anode of voltage-stabiliser tube is connected with one end of the grid end of PMOS transistor and resistance, and the other end of resistance connects
To ground terminal.
3. reverse-connection protection circuit according to claim 1, another structure includes a PMOS transistor, a voltage-stabiliser tube, one
Resistance and a Schottky diode, it is characterised in that the drain terminal of PMOS transistor is connected with external electrical source, backgate and source and
The negative terminal of voltage-stabiliser tube is connected with the power end of chip internal H bridge structure divisions, the anode of voltage-stabiliser tube and the grid end of PMOS transistor
It is connected with one end of resistance, the other end of resistance is connected to ground terminal, and the anode of Schottky diode is connected with external electrical source, negative terminal
It is connected with common electrical source of the chip internal in addition to H bridge structure divisions.
4. reverse-connection protection circuit according to claim 3, it is characterised in that the reverse breakdown electricity of the Schottky diode
Maximum operating voltage of the pressure more than chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720918366.6U CN207150167U (en) | 2017-07-27 | 2017-07-27 | Applied to the reverse-connection protection circuit in unicoil fans drive chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720918366.6U CN207150167U (en) | 2017-07-27 | 2017-07-27 | Applied to the reverse-connection protection circuit in unicoil fans drive chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207150167U true CN207150167U (en) | 2018-03-27 |
Family
ID=61672797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720918366.6U Expired - Fee Related CN207150167U (en) | 2017-07-27 | 2017-07-27 | Applied to the reverse-connection protection circuit in unicoil fans drive chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207150167U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114421445A (en) * | 2021-09-06 | 2022-04-29 | 上海芯圣电子股份有限公司 | Chip for preventing reverse connection of power supply |
-
2017
- 2017-07-27 CN CN201720918366.6U patent/CN207150167U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114421445A (en) * | 2021-09-06 | 2022-04-29 | 上海芯圣电子股份有限公司 | Chip for preventing reverse connection of power supply |
| CN114421445B (en) * | 2021-09-06 | 2024-02-23 | 上海芯圣电子股份有限公司 | Chip capable of preventing reverse connection of power supply |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180327 Termination date: 20190727 |