CN204144305U - A kind of infrarede emitting diode with high reliability electrode - Google Patents
A kind of infrarede emitting diode with high reliability electrode Download PDFInfo
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- CN204144305U CN204144305U CN201420516924.2U CN201420516924U CN204144305U CN 204144305 U CN204144305 U CN 204144305U CN 201420516924 U CN201420516924 U CN 201420516924U CN 204144305 U CN204144305 U CN 204144305U
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Abstract
The utility model discloses a kind of infrarede emitting diode with high reliability electrode, the side of delaying photo structure outside arranges roughened layer, roughened layer arranges etch stop layers, etch stop layers arranges ohmic contact layer, ohmic contact layer surface forms expansion electrode, micro-roughened layer is arranged on ohmic contact layer, and pad electrode is arranged on micro-roughened layer, is connected conducting with expansion electrode; The opposite side of delaying photo structure outside arranges metallic mirror, and metallic mirror arranges substrate, and substrate arranges back electrode.The utility model effectively improves the reliability of welding stage electrode, solves welding stage electrode and holds caducous problem due to poor adhesion, also solves the encapsulation difficult problem that epitaxial loayer when beating gold thread under welding stage electrode is easily broken.
Description
Technical field
The utility model relates to LED technology field, refers in particular to a kind of infrarede emitting diode with high reliability electrode.
Background technology
Infrarede emitting diode has the little and high reliability of low-power consumption, size, is widely used in the fields such as communication, sensoring.In prior art, the epitaxial structure adopting Metal Organic Vapor epitaxial growth to have quantum well obtains higher internal quantum efficiency; Meanwhile, adopt the flip-chip such as metallic mirror and surface coarsening manufacture craft, promote the external quantum efficiency of infrarede emitting diode.
Because controlled collapsible chip connec-tion step is complicated, the electrode reliability that the manufacture craft adopted in prior art produces is poor.Publication number is a kind of formation method that CN103682023A discloses LED structure and electrode thereof, comprises LED epitaxial loayer; Nesa coating, covers LED epitaxial loayer, nesa coating has one or more hole running through this nesa coating; Pad, to be positioned on nesa coating and to fill described hole.
This LED structure, by adopting the hole in pad filling nesa coating, makes pad be fixed on LED chip surface, can effectively pre-anti-lost pad or power down pole.But, because it need make nesa coating and perforate, add cost of manufacture, and the adhesiveness of conducting film and epitaxial loayer has uncertainty.
Utility model content
The purpose of this utility model is to provide a kind of infrarede emitting diode with high reliability electrode, effectively improves the reliability of electrode, solve welding stage electrode easily and epitaxial loayer comes off or packaging and routing time easily smash the problem of welding stage base part epitaxial material.
For reaching above-mentioned purpose, solution of the present utility model is:
A kind of infrarede emitting diode with high reliability electrode, the side of delaying photo structure outside arranges roughened layer, roughened layer arranges etch stop layers, etch stop layers arranges ohmic contact layer, ohmic contact layer surface forms expansion electrode, micro-roughened layer is arranged on ohmic contact layer, and pad electrode is arranged on micro-roughened layer, is connected conducting with expansion electrode; The opposite side of delaying photo structure outside arranges metallic mirror, and metallic mirror arranges substrate, and substrate arranges back electrode.
Further, extension ray structure comprises the first type conductive layer, active layer, Second-Type conductive layer; Active layer side arranges the first type conductive layer, and the first type conductive layer contacts with roughened layer; Opposite side arranges Second-Type conductive layer, and Second-Type conductive layer contacts with metallic mirror.
Further, the surface roughness of micro-roughened layer after alligatoring is less than 100nm.
Further, micro-roughened layer material comprises (Al
xga
1-x)
0.5in
0.5p, and 0.6>=x>=0.4.
Further, the thickness of micro-roughened layer is 150-200nm.
Further, the material of ohmic contact layer comprises Al
xga
1-xas, 0.1>=x>=0.
Further, the thickness of ohmic contact layer is 50-200nm.
Further, the material of etch stop layers comprises AlGaInP.
Further, the thickness of etch stop layers is 50-100nm.
Further, the material of roughened layer comprises AlGaAs.
There is an infrarede emitting diode manufacture method for high reliability electrode, comprise the following steps:
One, epitaxial substrate is formed micro-roughened layer, ohmic contact layer, etch stop layers, roughened layer, the first type conductive layer, active layer and Second-Type conductive layer from bottom to top successively;
Two, evaporation metal speculum on Second-Type conductive layer;
Three, by the surface bond of metallic mirror on substrate;
Four, adopt wet etching to remove epitaxial substrate, expose micro-roughened layer;
Five, adopt coarsening solution to etch micro-roughened layer, form alligatoring pattern on micro-roughened layer surface;
Six, adopt mask, photoetching, wet etching to remove the micro-roughened layer removing the extra-regional other parts of central electrode, and the removal region of micro-roughened layer expose ohmic contact layer;
Seven, adopt mask, photoetching technique to form expansion electrode figure on exposed ohmic contact layer surface; The remaining area of micro-roughened layer is formed pad electrode figure;
Eight, adopt metal evaporation to form pad electrode and expansion electrode; Then protective layer is formed at pad electrode and expansion electrode surface;
Nine, adopt wet etching successively to remove exposed ohmic contact layer, etch stop layers until expose roughened layer;
Ten, form alligatoring pattern on exposed roughened layer surface;
11, at substrate back evaporation back electrode, remove the protective layer of pad electrode and expansion electrode, sliver and get final product.
Further, the surface roughness of micro-roughened layer after alligatoring is less than 100nm.
Further, micro-roughened layer material comprises (Al
xga
1-x)
0.5in
0.5p, and 0.6>=x>=0.4.Adopt the AlGaInP material of lower Al component can be easier to control roughening process and form micro-alligatoring pattern on the surface of epitaxial loayer, avoid alligatoring speed too soon wayward and alligatoring pattern easily form the pyramidal structure of spike.The AlGaInP material of higher Al component is adopted can more easily to make pad electrode and epitaxial loayer form non-ohmic contact.But too the AlGaInP material of high Al contents easily causes material oxidation and affects the adhesiveness of welding stage electrode.Therefore, AlGaInP materials A l component adopts 0.6 >=x >=0.4 more suitable.
Further, the thickness of micro-roughened layer is 150-200nm.Micro-roughened layer Thickness Design requires thinner, avoid because the difference in level between expansion electrode and pad electrode is large, to such an extent as to the metal needing evaporation thicker when evaporation expansion electrode and pad electrode, and there is the hidden danger increasing series resistance, can cost of manufacture be reduced so Thickness Design is thinner and reduces the impact on photoelectric properties.But be not more than 100nm because the roughness formed on micro-roughened layer surface arranges scope, micro-roughened layer adopts too thin thickness easily to cause corrosion to penetrate micro-roughened layer.So adopt micro-roughened layer thickness of 150 to 200nm more suitable.
Further, the material of ohmic contact layer comprises Al
xga
1-xas, 0.1>=x>=0.
Further, the thickness of ohmic contact layer is 50-200nm.
Further, the material of etch stop layers comprises AlGaInP.
Further, the thickness of etch stop layers is 50-100nm.
Further, the material of roughened layer comprises AlGaAs.Micro-roughened layer, ohmic contact layer, and etch stop layers, roughened layer interval adopt different materials system, wet etching easy to use, make manufacture craft simple and cost is lower.Ohmic contact layer, etch stop layers adopt thinner Thickness Design, the surface level difference due to expansion electrode and alligatoring can be avoided large, cause height and the broadband mismatch of expansion electrode.
After adopting such scheme, pad electrode of the present utility model is arranged on micro-roughened layer, fine coarse surface pattern is formed on micro-roughened layer surface, increase the contact-making surface of pad electrode and extension ray structure, effective raising pad electrode and epitaxial loayer adhesion, solve existing routine techniques at smooth extension ray structure surface evaporation pad electrode, cause the problem of pad electrode and the little easy power down pole of epitaxial loayer adhesion; Also solve traditional handicraft to adopt after surface coarsening technique, at coarse epi-layer surface evaporation pad electrode, cause the problem that below pad electrode, epitaxial loayer is easily broken.
Simultaneously, the utility model pad electrode is produced on micro-roughened layer, and pad electrode and epitaxial loayer form non-ohmic contact, and expansion electrode is arranged on ohmic contact layer and with pad electrode and is connected, increase the effect of current expansion, improve the luminous efficiency of infrarede emitting diode.
Accompanying drawing explanation
Fig. 1 is the utility model embodiment one extension ray structure schematic diagram;
Fig. 2 is the utility model embodiment one diode fabrication process schematic one;
Fig. 3 is the utility model embodiment one diode fabrication process schematic two (appearing micro-roughened layer);
Fig. 4 is the utility model embodiment one diode fabrication process schematic three (making pad electrode);
Fig. 5 is the front schematic view of the utility model embodiment one diode structure;
Fig. 6 is the diode structure schematic diagram of Fig. 5 AA directional profile;
Fig. 7 is the diode structure schematic diagram of Fig. 5 BB directional profile.
Label declaration
The micro-roughened layer 2 of substrate 1
Ohmic contact layer 3 etch stop layers 4
Roughened layer 5 first type conductive layer 6
Active layer 7 Second-Type conductive layer 8
Metallic mirror 9 silicon substrate 10
Pad electrode 11 expansion electrode 12
Back electrode 13.
Embodiment
Below in conjunction with drawings and the specific embodiments, the utility model is described in detail.
Embodiment one
Consult shown in Fig. 1 to Fig. 7, a kind of infrarede emitting diode with high reliability electrode that the utility model discloses and preparation method thereof embodiment one.
As shown in Figure 1, GaAs substrate 1 upper surface by lower from be followed successively by micro-roughened layer 2, ohmic contact layer 3, etch stop layers 4, roughened layer 5, first type conductive layer 6, active layer 7 and Second-Type conductive layer 8.
The material of described micro-roughened layer 2 is (Al
0.5ga
0.5)
0.5in
0.5p tri-or five compounds of group, and micro-roughened layer thickness is 200nm.
The material of described ohmic contact layer 3 is specially GaAs tri-or five compounds of group, and the thickness of ohmic contact layer 3 is 100nm.
The material of etch stop layers 4 comprises (Al
0.5ga
0.5)
0.5in
0.5p tri-or five compounds of group, and etch stop layers 4 thickness is 250nm.
The material of described roughened layer 5 is Al
0.55ga
0.45as tri-or five compounds of group, and roughened layer 5 thickness is 1.8 μm.
There is an infrarede emitting diode manufacture method for high reliability electrode, comprise the following steps:
One, GaAs substrate 1 upper surface by lower from set gradually micro-roughened layer 2, ohmic contact layer 3, etch stop layers 4, roughened layer 5, first type conductive layer 6, active layer 7 and Second-Type conductive layer 8.
Two, evaporation metal speculum 9 on Second-Type conductive layer.
Three, the surface bond of metallic mirror is had the silicon substrate 10 of conductivity, and overall structure inversion is come, as shown in Figure 2.
Four, adopt wet etching to remove GaAs substrate 1, expose the surface of micro-roughened layer 2.
Five, adopt coarsening solution to etch micro-roughened layer 2, form the surface coarsening degree of depth of 80nm on micro-roughened layer 2 surface, as shown in Figure 3.
Six, adopt the technology such as mask, photoetching, wet etching to remove the micro-roughened layer 2 of part, the remaining area of micro-roughened layer 2 is the border circular areas making pad electrode 11, and ohmic contact layer 3 is exposed in the removal region of micro-roughened layer 2, as shown in Figure 4.
Seven, adopt ohmic contact layer 3 surface that the technology such as mask, photoetching is being exposed to form expansion electrode 12 figure; The remaining area of micro-roughened layer 2 is formed pad electrode 11 figure.
Eight, adopt metal evaporation technique to form pad electrode 11 and expansion electrode 12, and form the protective layer of pad electrode 11 and expansion electrode 12.
Nine, ohmic contact layer 3 arranges the exterior domain of expansion electrode 12, etch stop layers 4 covers the exterior domain arranging the ohmic contact layer 3 of expansion electrode 12 to adopt wet etching to remove respectively, exposes the exterior domain that roughened layer 5 covers pad electrode 11 and expansion electrode 12.
Ten, adopt the surface of the exposed area of coarsening solution etching roughened layer 5, form surface coarsening pattern.
11, at silicon substrate 10 back side evaporation back electrode 13, remove the protective layer of pad electrode 11 and expansion electrode 12, after sliver, obtain the infrarede emitting diode as shown in Fig. 5,6,7.
A kind of infrarede emitting diode with high reliability electrode that described method makes, include active layer 7 side and the first type conductive layer 6 is set, first type conductive layer 6 arranges roughened layer 5, roughened layer 5 is arranged etch stop layers 4, etch stop layers 4 is arranged ohmic contact layer 3, ohmic contact layer 3 surface forms expansion electrode 12; Micro-roughened layer 2 is arranged on ohmic contact layer 3, and pad electrode 11 is arranged on micro-roughened layer 2, and is connected conducting with expansion electrode 12.Active layer 7 opposite side arranges Second-Type conductive layer 8; Second-Type conductive layer 8 is arranged metallic mirror 9, metallic mirror 9 is arranged silicon substrate 10, silicon substrate 10 is arranged back electrode 13.
Embodiment two
Embodiment two is with the difference of embodiment one: the material of described micro-roughened layer 2 is (Al
0.4ga
0.6)
0.5in
0.5p tri-or five compounds of group, and the thickness of micro-roughened layer 2 is 300nm.
The material of described ohmic contact layer 3 is GaAs tri-or five compounds of group, and the thickness of ohmic contact layer 3 is 150nm.
The material of described etch stop layers 4 comprises (Al
0.8ga
0.2)
0.5in
0.5p tri-or five compounds of group, and etch stop layers 4 thickness is 150nm.
The material of described roughened layer 5 is Al
0.45ga
0.55as tri-or five compounds of group, and roughened layer 5 thickness is 2 μm.
The foregoing is only preferred embodiment of the present utility model, not to the restriction of this case design, all equivalent variations done according to the design key of this case, all fall into the protection range of this case.
Claims (6)
1. one kind has the infrarede emitting diode of high reliability electrode, it is characterized in that: the side of delaying photo structure outside arranges roughened layer, roughened layer arranges etch stop layers, etch stop layers arranges ohmic contact layer, ohmic contact layer surface forms expansion electrode, micro-roughened layer is arranged on ohmic contact layer, and pad electrode is arranged on micro-roughened layer, is connected conducting with expansion electrode; The opposite side of delaying photo structure outside arranges metallic mirror, and metallic mirror arranges substrate, and substrate arranges back electrode.
2. a kind of infrarede emitting diode with high reliability electrode as claimed in claim 1, is characterized in that: extension ray structure comprises the first type conductive layer, active layer, Second-Type conductive layer; Active layer side arranges the first type conductive layer, and the first type conductive layer contacts with roughened layer; Opposite side arranges Second-Type conductive layer, and Second-Type conductive layer contacts with metallic mirror.
3. a kind of infrarede emitting diode with high reliability electrode as claimed in claim 1, is characterized in that: the thickness of etch stop layers is 50-100nm.
4. a kind of infrarede emitting diode with high reliability electrode as claimed in claim 1, is characterized in that: the surface roughness of micro-roughened layer after alligatoring is less than 100nm.
5. a kind of infrarede emitting diode with high reliability electrode as claimed in claim 1, is characterized in that: the thickness of micro-roughened layer is 150-200nm.
6. a kind of infrarede emitting diode with high reliability electrode as claimed in claim 1, is characterized in that: the thickness of ohmic contact layer is 50-200nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420516924.2U CN204144305U (en) | 2014-09-10 | 2014-09-10 | A kind of infrarede emitting diode with high reliability electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420516924.2U CN204144305U (en) | 2014-09-10 | 2014-09-10 | A kind of infrarede emitting diode with high reliability electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204144305U true CN204144305U (en) | 2015-02-04 |
Family
ID=52420971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420516924.2U Active CN204144305U (en) | 2014-09-10 | 2014-09-10 | A kind of infrarede emitting diode with high reliability electrode |
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| Country | Link |
|---|---|
| CN (1) | CN204144305U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104201265A (en) * | 2014-09-10 | 2014-12-10 | 厦门乾照光电股份有限公司 | Infrared light-emitting diode with high-reliability electrodes |
| TWI782462B (en) * | 2021-03-26 | 2022-11-01 | 張有諒 | Composite heat dissipation cover for chip |
-
2014
- 2014-09-10 CN CN201420516924.2U patent/CN204144305U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104201265A (en) * | 2014-09-10 | 2014-12-10 | 厦门乾照光电股份有限公司 | Infrared light-emitting diode with high-reliability electrodes |
| TWI782462B (en) * | 2021-03-26 | 2022-11-01 | 張有諒 | Composite heat dissipation cover for chip |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Yangzhou Ganzhao Photoelectric Co., Ltd. Assignor: Xiamen Changelight Co., Ltd. Contract record no.: 2017320000060 Denomination of utility model: Infrared light-emitting diode with high-reliability electrodes Granted publication date: 20150204 License type: Exclusive License Record date: 20170310 |
|
| EE01 | Entry into force of recordation of patent licensing contract |