CN104201265A - Infrared light-emitting diode with high-reliability electrodes - Google Patents
Infrared light-emitting diode with high-reliability electrodes Download PDFInfo
- Publication number
- CN104201265A CN104201265A CN201410457099.8A CN201410457099A CN104201265A CN 104201265 A CN104201265 A CN 104201265A CN 201410457099 A CN201410457099 A CN 201410457099A CN 104201265 A CN104201265 A CN 104201265A
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- layer
- electrode
- emitting diode
- micro
- ohmic contact
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- 238000005260 corrosion Methods 0.000 claims abstract description 27
- 230000007797 corrosion Effects 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 27
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 239000002184 metal Substances 0.000 abstract description 5
- 238000007788 roughening Methods 0.000 abstract description 5
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 238000005476 soldering Methods 0.000 abstract 3
- 241001391944 Commicarpus scandens Species 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 138
- 238000000034 method Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 238000001883 metal evaporation Methods 0.000 description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses an infrared light-emitting diode with high-reliability electrodes. A roughening layer is arranged on one side of an epitaxial light-emitting structure, a corrosion stop layer is arranged on the roughening layer, an ohmic contact layer is arranged on the corrosion stop layer, extension electrodes are formed on the surface of the ohmic contact layer, a micro roughening layer is arranged on the ohmic contact layer, and a bonding pad electrode is arranged on the micro roughening layer and connected with the extension electrodes; a metal reflector is arranged on the other side of the epitaxial light-emitting structure, a substrate is arranged on the metal reflector, and a back electrode is arranged on the substrate. Reliability of soldering station electrodes is improved effectively, the problem that soldering station electrodes are prone to falling off due to poor adhesion is solved, and the packaging problem that the epitaxial layer under the soldering station electrodes is easy to break up during wire bonding is solved as well.
Description
Technical field
The present invention relates to LED technology field, refer in particular to a kind of infrarede emitting diode with high reliability electrode.
Background technology
Infrarede emitting diode has low-power consumption, size is little and high reliability, is widely used in the fields such as communication, sensoring.In prior art, the epitaxial structure that adopts metallo-organic compound vapor phase epitaxial growth to have quantum well is obtained higher internal quantum efficiency; Meanwhile, adopt the flip-chip manufacture crafts such as metallic mirror and surface coarsening, promote the external quantum efficiency of infrarede emitting diode.
Because controlled collapsible chip connec-tion step is complicated, the electrode reliability that the manufacture craft of available technology adopting produces is poor.Publication number is a kind of formation method that CN103682023A discloses LED structure and electrode thereof, comprises LED epitaxial loayer; Nesa coating, covers LED epitaxial loayer, has one or more holes that run through this nesa coating on nesa coating; Pad, is positioned on nesa coating and fills described hole.
This LED structure, by adopting pad to fill the hole in nesa coating, makes pad be fixed on LED chip surface, can effectively pre-anti-lost pad or the power down utmost point.But, because it need make nesa coating and perforate, increased cost of manufacture, and the adhesiveness of conducting film and epitaxial loayer has uncertainty.
Summary of the invention
The object of the present invention is to provide a kind of infrarede emitting diode with high reliability electrode, effectively improve the reliability of electrode, solve welding stage electrode easily with epitaxial loayer comes off or easily smash the problem of epitaxial material below welding stage electrode during packaging and routing.
For reaching above-mentioned purpose, solution of the present invention is:
A kind of infrarede emitting diode with high reliability electrode, delay outside in a side of photo structure roughened layer is set, corrosion cutoff layer is set on roughened layer, on corrosion cutoff layer, ohmic contact layer is set, ohmic contact layer surface forms expansion electrode, micro-roughened layer is arranged on ohmic contact layer, and pad electrode is arranged on micro-roughened layer, is connected conducting with expansion electrode; The opposite side of delaying outside photo structure arranges metallic mirror, and substrate is set on metallic mirror, and back electrode is set on substrate.
Further, extension ray structure comprises the first type conductive layer, active layer, Second-Type conductive layer; Active layer one side arranges the first type conductive layer, and the first type conductive layer contacts with roughened layer; Opposite side arranges Second-Type conductive layer, and Second-Type conductive layer contacts with metallic mirror.
Further, the surface roughness of micro-roughened layer after alligatoring is less than 100nm.
Further, micro-roughened layer material comprises (Al
xga
1-x)
0.5in
0.5p, and 0.6>=x>=0.4.
Further, the thickness of micro-roughened layer is 150-200nm.
Further, the material of ohmic contact layer comprises Al
xga
1-xas, 0.1>=x>=0.
Further, the thickness of ohmic contact layer is 50-200nm.
Further, the material of corrosion cutoff layer comprises AlGaInP.
Further, the thickness of corrosion cutoff layer is 50-100nm.
Further, the material of roughened layer comprises AlGaAs.
An infrarede emitting diode manufacture method with high reliability electrode, comprises the following steps:
One, in epitaxial substrate, form successively micro-roughened layer, ohmic contact layer, corrosion cutoff layer, roughened layer, the first type conductive layer, active layer and Second-Type conductive layer from bottom to top;
Two, evaporation metal speculum on Second-Type conductive layer;
Three, by the surface bond of metallic mirror on substrate;
Four, adopt wet etching to remove epitaxial substrate, expose micro-roughened layer;
Five, adopt the micro-roughened layer of coarsening solution etching, on micro-roughened layer surface, form alligatoring pattern;
Six, adopt mask, photoetching, wet etching to remove the micro-roughened layer except the extra-regional other parts of central electrode, and the removal region of micro-roughened layer expose ohmic contact layer;
Seven, adopt mask, photoetching technique to form expansion electrode figure on exposed ohmic contact layer surface; On the remaining area of micro-roughened layer, form pad electrode figure;
Eight, adopt metal evaporation to form pad electrode and expansion electrode; Then at pad electrode and expansion electrode surface, form protective layer;
Nine, adopt wet etching successively to remove exposed ohmic contact layer, corrosion cutoff layer until expose roughened layer;
Ten, on exposed roughened layer surface, form alligatoring pattern;
11, at substrate back evaporation back electrode, remove the protective layer of pad electrode and expansion electrode, sliver and get final product.
Further, the surface roughness of micro-roughened layer after alligatoring is less than 100nm.
Further, micro-roughened layer material comprises (Al
xga
1-x)
0.5in
0.5p, and 0.6>=x>=0.4.Adopt the AlGaInP material of lower Al component can be easier to control roughening process and on the surface of epitaxial loayer, form micro-alligatoring pattern, avoid the too fast wayward and alligatoring pattern of alligatoring speed easily to form the pyramidal structure of spike.Adopt the AlGaInP material of higher Al component can more easily make pad electrode and epitaxial loayer form non-ohmic contact.But too the AlGaInP material of high Al contents easily causes material oxidation and affects the adhesiveness of welding stage electrode.Therefore it is more suitable that, AlGaInP materials A l component adopts 0.6 >=x >=0.4.
Further, the thickness of micro-roughened layer is 150-200nm.Micro-roughened layer Thickness Design requires thinner, avoid because the difference in level between expansion electrode and pad electrode is large, to such an extent as to need the metal that evaporation is thicker when evaporation expansion electrode and pad electrode, and there is the hidden danger that increases series resistance, so Thickness Design is thinner, can reduces cost of manufacture and reduce the impact on photoelectric properties.But because the roughness forming on micro-roughened layer surface arranges scope, be not more than 100nm, micro-roughened layer adopts too thin thickness easily to cause corrosion to penetrate micro-roughened layer.So micro-roughened layer thickness of employing 150 to 200nm is more suitable.
Further, the material of ohmic contact layer comprises Al
xga
1-xas, 0.1>=x>=0.
Further, the thickness of ohmic contact layer is 50-200nm.
Further, the material of corrosion cutoff layer comprises AlGaInP.
Further, the thickness of corrosion cutoff layer is 50-100nm.
Further, the material of roughened layer comprises AlGaAs.Micro-roughened layer, ohmic contact layer, adopt different materials system with corrosion cutoff layer, roughened layer interval, wet etching easy to use, makes that manufacture craft is simple and cost is lower.Ohmic contact layer, corrosion cutoff layer adopt thinner Thickness Design, can avoid, because the surface level difference in height of expansion electrode and alligatoring is large, causing height and the broadband mismatch of expansion electrode.
Adopt after such scheme, pad electrode of the present invention is arranged on micro-roughened layer, on micro-roughened layer surface, form fine coarse surface pattern, increase the contact-making surface of pad electrode and extension ray structure, effectively improve pad electrode and epitaxial loayer adhesion, solve existing routine techniques at smooth extension ray structure surface evaporation pad electrode, cause the problem of pad electrode and the little easy power down utmost point of epitaxial loayer adhesion; Also solve traditional handicraft and adopt after surface coarsening technique, at coarse epi-layer surface evaporation pad electrode, cause easily broken problem of pad electrode below epitaxial loayer.
Simultaneously, pad electrode of the present invention is produced on micro-roughened layer, and pad electrode and epitaxial loayer form non-ohmic contact, and expansion electrode is arranged on ohmic contact layer and with pad electrode and is connected, increase the effect of current expansion, improved the luminous efficiency of infrarede emitting diode.
Accompanying drawing explanation
Fig. 1 is the embodiment of the present invention one extension ray structure schematic diagram;
Fig. 2 is the embodiment of the present invention one diode fabrication process schematic diagram one;
Fig. 3 is the embodiment of the present invention one diode fabrication process schematic diagram two (appearing micro-roughened layer);
Fig. 4 is the embodiment of the present invention one diode fabrication process schematic diagram three (making pad electrode);
Fig. 5 is the front schematic view of the embodiment of the present invention one diode structure;
Fig. 6 is the diode structure schematic diagram of Fig. 5 AA directional profile;
Fig. 7 is the diode structure schematic diagram of Fig. 5 BB directional profile.
Label declaration
The micro-roughened layer 2 of substrate 1
Ohmic contact layer 3 corrosion cutoff layers 4
Roughened layer 5 first type conductive layers 6
Active layer 7 Second-Type conductive layers 8
Metallic mirror 9 silicon substrates 10
Pad electrode 11 expansion electrodes 12
Back electrode 13.
Embodiment
Below in conjunction with drawings and the specific embodiments, the present invention is described in detail.
Embodiment mono-
Consult shown in Fig. 1 to Fig. 7 a kind of infrarede emitting diode with high reliability electrode that the present invention discloses and preparation method thereof embodiment mono-.
As shown in Figure 1, the upper surface of GaAs substrate 1 by lower from be followed successively by micro-roughened layer 2, ohmic contact layer 3, corrosion cutoff layer 4, roughened layer 5, the first type conductive layer 6, active layer 7 and Second-Type conductive layer 8.
The material of described micro-roughened layer 2 is (Al
0.5ga
0.5)
0.5in
0.5p tri-or five compounds of group, and micro-roughened layer thickness is 200nm.
The material of described ohmic contact layer 3 is specially GaAs tri-or five compounds of group, and the thickness of ohmic contact layer 3 is 100nm.
The material of corrosion cutoff layer 4 comprises (Al
0.5ga
0.5)
0.5in
0.5p tri-or five compounds of group, and corrosion cutoff layer 4 thickness are 250nm.
The material of described roughened layer 5 is Al
0.55ga
0.45as tri-or five compounds of group, and roughened layer 5 thickness are 1.8 μ m.
An infrarede emitting diode manufacture method with high reliability electrode, comprises the following steps:
One, the upper surface of GaAs substrate 1 by lower from set gradually micro-roughened layer 2, ohmic contact layer 3, corrosion cutoff layer 4, roughened layer 5, the first type conductive layer 6, active layer 7 and Second-Type conductive layer 8.
Two, evaporation metal speculum 9 on Second-Type conductive layer.
Three, the surface bond of metallic mirror is had to the silicon substrate 10 of conductivity, and overall structure is inverted and comes, as shown in Figure 2.
Four, adopt wet etching to remove GaAs substrate 1, the surface of exposing micro-roughened layer 2.
Five, adopt the micro-roughened layer 2 of coarsening solution etching, on micro-roughened layer 2 surfaces, form the surface coarsening degree of depth of 80nm, as shown in Figure 3.
Six, adopt the technology such as mask, photoetching, wet etching to remove the micro-roughened layer 2 of part, the remaining area of micro-roughened layer 2 is for making the border circular areas of pad electrode 11, and ohmic contact layer 3 is exposed in the removal region of micro-roughened layer 2, as shown in Figure 4.
Seven, adopt the technology such as mask, photoetching to form expansion electrode 12 figures on ohmic contact layer 3 surfaces of exposing; On the remaining area of micro-roughened layer 2, form pad electrode 11 figures.
Eight, adopt metal evaporation technique to form pad electrode 11 and expansion electrode 12, and form the protective layer of pad electrode 11 and expansion electrode 12.
Nine, adopt wet etching to remove respectively that ohmic contact layer 3 arranges region outside expansion electrode 12, corrosion cutoff layer 4 covers region outside the ohmic contact layer 3 that expansion electrode 12 is set, expose roughened layer 5 and cover region outside pad electrodes 11 and expansion electrode 12.
Ten, the surface of exposing region of employing coarsening solution etching roughened layer 5, forms surface coarsening pattern.
11, at silicon substrate 10 back side evaporation back electrodes 13, remove the protective layer of pad electrode 11 and expansion electrode 12, after sliver, obtain the infrarede emitting diode as shown in Fig. 5,6,7.
A kind of infrarede emitting diode with high reliability electrode that described method is made, comprise that active layer 7 one sides arrange the first type conductive layer 6, on the first type conductive layer 6, roughened layer 5 is set, corrosion cutoff layer 4 is set on roughened layer 5, on corrosion cutoff layer 4, ohmic contact layer 3 is set, ohmic contact layer 3 surfaces form expansion electrode 12; Micro-roughened layer 2 is arranged on ohmic contact layer 3, and pad electrode 11 is arranged on micro-roughened layer 2, and is connected conducting with expansion electrode 12.Active layer 7 opposite sides arrange Second-Type conductive layer 8; Metallic mirror 9 is set on Second-Type conductive layer 8, silicon substrate 10 is set on metallic mirror 9, back electrode 13 is set on silicon substrate 10.
Embodiment bis-
Embodiment bis-is with the difference of embodiment mono-: the material of described micro-roughened layer 2 is (Al
0.4ga
0.6)
0.5in
0.5p tri-or five compounds of group, and the thickness of micro-roughened layer 2 is 300nm.
The material of described ohmic contact layer 3 is GaAs tri-or five compounds of group, and the thickness of ohmic contact layer 3 is 150nm.
The material of described corrosion cutoff layer 4 comprises (Al
0.8ga
0.2)
0.5in
0.5p tri-or five compounds of group, and corrosion cutoff layer 4 thickness are 150nm.
The material of described roughened layer 5 is Al
0.45ga
0.55as tri-or five compounds of group, and roughened layer 5 thickness are 2 μ m.
The foregoing is only preferred embodiment of the present invention, the not restriction to this case design, all equivalent variations of doing according to the design key of this case, all fall into the protection range of this case.
Claims (10)
1. an infrarede emitting diode with high reliability electrode, it is characterized in that: delay outside in a side of photo structure roughened layer is set, corrosion cutoff layer is set on roughened layer, on corrosion cutoff layer, ohmic contact layer is set, ohmic contact layer surface forms expansion electrode, micro-roughened layer is arranged on ohmic contact layer, and pad electrode is arranged on micro-roughened layer, is connected conducting with expansion electrode; The opposite side of delaying outside photo structure arranges metallic mirror, and substrate is set on metallic mirror, and back electrode is set on substrate.
2. a kind of infrarede emitting diode with high reliability electrode as claimed in claim 1, is characterized in that: extension ray structure comprises the first type conductive layer, active layer, Second-Type conductive layer; Active layer one side arranges the first type conductive layer, and the first type conductive layer contacts with roughened layer; Opposite side arranges Second-Type conductive layer, and Second-Type conductive layer contacts with metallic mirror.
3. a kind of infrarede emitting diode with high reliability electrode as claimed in claim 1, is characterized in that: the material of corrosion cutoff layer comprises AlGaInP.
4. a kind of infrarede emitting diode with high reliability electrode as claimed in claim 1, is characterized in that: the thickness of corrosion cutoff layer is 50-100nm.
5. a kind of infrarede emitting diode with high reliability electrode as claimed in claim 1, is characterized in that: the material of roughened layer comprises AlGaAs.
6. a kind of infrarede emitting diode with high reliability electrode as claimed in claim 1, is characterized in that: the surface roughness of micro-roughened layer after alligatoring is less than 100nm.
7. a kind of infrarede emitting diode with high reliability electrode as claimed in claim 1, is characterized in that: micro-roughened layer material comprises (Al
xga
1-x)
0.5in
0.5p, and 0.6>=x>=0.4.
8. a kind of infrarede emitting diode with high reliability electrode as claimed in claim 1, is characterized in that: the thickness of micro-roughened layer is 150-200nm.
9. a kind of infrarede emitting diode with high reliability electrode as claimed in claim 1, is characterized in that: the material of ohmic contact layer comprises Al
xga
1-xas, 0.1>=x>=0.
10. a kind of infrarede emitting diode with high reliability electrode as claimed in claim 1, is characterized in that: the thickness of ohmic contact layer is 50-200nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410457099.8A CN104201265A (en) | 2014-09-10 | 2014-09-10 | Infrared light-emitting diode with high-reliability electrodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410457099.8A CN104201265A (en) | 2014-09-10 | 2014-09-10 | Infrared light-emitting diode with high-reliability electrodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104201265A true CN104201265A (en) | 2014-12-10 |
Family
ID=52086531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410457099.8A Pending CN104201265A (en) | 2014-09-10 | 2014-09-10 | Infrared light-emitting diode with high-reliability electrodes |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104201265A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090075412A1 (en) * | 2005-04-07 | 2009-03-19 | Samsung Electro-Mechanics Co., Ltd. | Vertical group iii-nitride light emitting device and method for manufacturing the same |
| CN101714600A (en) * | 2009-11-16 | 2010-05-26 | 厦门市三安光电科技有限公司 | Inversed AlGaInP based light-emitting diode and manufacturing method thereof |
| US20130313598A1 (en) * | 2012-05-23 | 2013-11-28 | High Power Opto. Inc. | Electrode contact structure of light-emitting diode |
| CN204144305U (en) * | 2014-09-10 | 2015-02-04 | 厦门乾照光电股份有限公司 | A kind of infrarede emitting diode with high reliability electrode |
-
2014
- 2014-09-10 CN CN201410457099.8A patent/CN104201265A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090075412A1 (en) * | 2005-04-07 | 2009-03-19 | Samsung Electro-Mechanics Co., Ltd. | Vertical group iii-nitride light emitting device and method for manufacturing the same |
| CN101714600A (en) * | 2009-11-16 | 2010-05-26 | 厦门市三安光电科技有限公司 | Inversed AlGaInP based light-emitting diode and manufacturing method thereof |
| US20130313598A1 (en) * | 2012-05-23 | 2013-11-28 | High Power Opto. Inc. | Electrode contact structure of light-emitting diode |
| CN204144305U (en) * | 2014-09-10 | 2015-02-04 | 厦门乾照光电股份有限公司 | A kind of infrarede emitting diode with high reliability electrode |
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Application publication date: 20141210 |
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