CN205319180U - LED face down chip who contains reflection stratum - Google Patents
LED face down chip who contains reflection stratum Download PDFInfo
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- CN205319180U CN205319180U CN201520734798.2U CN201520734798U CN205319180U CN 205319180 U CN205319180 U CN 205319180U CN 201520734798 U CN201520734798 U CN 201520734798U CN 205319180 U CN205319180 U CN 205319180U
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Abstract
The utility model provides a LED face down chip who contains reflection stratum, including substrate, N pad and P pad, substrate superposeed in proper order N type layer, luminescent layer, P type layer, reflection stratum and barrier layer to the etching is exposed the substrate upper surface and is formed a slot, chip surface form run through barrier layer, reflection stratum, P type layer, luminescent layer and with the N electrode hole of N type layer intercommunication, barrier layer and reflection stratum are exposed the surface and are formed P lead wire electrode, formation and the electrically conductive N lead wire electrode of being connected in N type layer in the N electrode hole, and N lead wire electrode forms with the same material codeposition of P lead wire electrode adoption promptly, and cover the be convenient for first insulation layer of insulation each other of one deck on the surface of N lead wire electrode and P lead wire electrode and peripheral, N pad and P pad through first insulation layer upper surface set up the contact hole respectively with N lead wire electrode and the P electric connection that goes between.
Description
[technical field]
The present invention relates to semiconductor optoelectronic chip technology field, particularly relate to a kind of LED flip chip containing reflecting layer.
[background technology]
Generally, group III-nitride luminescent device is manufactured by being epitaxially grown the lamination of the semiconductor layer of different composition and concentration of dopant on sapphire, carborundum or other suitable substrate by metal-organic ligand (MOCVD), molecular beam epitaxy (MBE) or other epitaxy technology. This lamination usually includes one or more n-layer of formation, the one or more luminescent layers in the active area being formed in one or more n-layer on substrate with such as Si doping and the one or more p-type layer with such as Mg doping formed on the active area. N and p-type area are formed electrical contact, is usually formed as III-nitride device being inverted or flip chip devices, wherein, form N and P in the same side of semiconductor structure and contact both, and extract light from that side contacting relative semiconductor structure.
It is frequently used silver to be subject to be transported impact by what mechanical stress, chemical reaction or electromigration caused as reflective p-contact and known its. Such as, illustrate the group III-nitride LED with silver-colored P contact in figure ia and in United States Patent (USP) 6,946,685, it be described. US6,946,685 teach that " silver electrode metallization stands electrochemical migration when there is dampness and electric field (such as, for instance the field produced gradually owing to applying running voltage in the contact position of device). The electrochemical migration of the silver metallized PN junction to device causes the alternating current bypass path crossing over knot, and it reduces the efficiency of device.
Figure 1A illustrates the luminescent device including semiconductor structure, and this semiconductor structure includes the luminescent active region 130A between the n-layer 120 and the P-type layer 140 of III nitride semiconductor of III-V nitride quasiconductor. In p-type layer, deposition includes the P electrode 160 of silver metal, and n-electrode (in Figure 1A not shown) is closed with n-layer Rhizoma Nelumbinis.Providing can for crossing over the described electrode applying signal of telecommunication to cause the photoemissive means from active area, and provide for prevent silver metal from p-electrode the migration barrier layer 175 towards the electrochemical migration of active area, wherein, migrating barrier layer 175 is conductive protection sheet; Conductive protection sheet surrounds silver completely, covers the edge of silver metal p-electrode. And, the material that the migration barrier layer 175 being made up of metal is generally containing Ti or W is made, but Ti/W visible light absorbing material, so the part exposed after covering Ag electrode can form " black surround " 10 and absorb visible ray, thus reducing the light efficiency of LED.
In the device shown in Figure 1A, in order to seal silver contact with conductive protection sheet (migrating barrier layer 175), migration barrier layer is fully wrapped around and seals silver, and the band between edge 112 and the edge migrating barrier layer 175 of reflective p-electrode 160 is called " black vaginal discharge " 10; Because its be not as silver P electrode 160 be reflexive, light can be reduced the efficiency of device by black vaginal discharge absorption.
[summary of the invention]
Efficiency and the brightness that it is an object of the invention to improve LED flip chip internal structure and promote LED, it is provided that a kind of LED flip chip containing reflecting layer.
In order to realize foregoing invention purpose, the technical solution used in the present invention is:
A kind of LED flip chip containing reflecting layer, including substrate, N pad and P pad, described substrate from bottom to top successively stratiform superposition be provided with N-type layer, luminescent layer, P-type layer, reflecting layer and barrier layer, N-type layer, luminescent layer, P-type layer, reflecting layer and barrier layer adopt the upper surface that etch process exposes substrate to form a groove, and the N-type layer on substrate, luminescent layer, P-type layer, reflecting layer and barrier layer are divided into the independent multiple chips that insulate each other by the groove arranged in length and breadth; Described chip surface is formed and runs through barrier layer, reflecting layer, P-type layer, luminescent layer and the N electrode hole connected with N-type layer; On described chip, the barrier layer of stacking, reflecting layer adopt after evaporation and photoetching process and form step between P-type layer upper surface, described barrier layer and reflecting layer exposed surface adopt sputtering or evaporation process to form the P lead-in wire electrode with wiring pattern, go between electrode and barrier layer of described P is conductively connected, and described P goes between the surrounding side wall surface in electrode covering barrier layer and reflecting layer and the upper surface on barrier layer; Sputtering or evaporation process is adopted to form the N lead-in wire electrode being conductively connected with N-type layer in described N electrode hole; The material that described N lead-in wire electrode is identical with P lead-in wire electrode employing deposits simultaneously forming; The surface of the gap, the upper surface of N lead-in wire electrode and the P lead-in wire electrode that are formed between the surface of described groove, described N electrode hole and N lead-in wire electrode adopts sputtering or spraying coating process to be coated with one layer of first insulating barrier being easy to mutually insulated, described first insulating barrier upper surface adopts photoetching and etching technique to offer the N-type contact hole through with N lead-in wire electrode top, and described first insulating barrier upper surface adopts photoetching and etching technique to be further opened with the P type contact hole through with P lead-in wire electrode top; The N-type contact hole that described N pad is arranged by the first insulating barrier is connected with N lead-in wire electrodes conduct, the P type contact hole that described P pad is arranged by the first insulating barrier is connected with P lead-in wire electrodes conduct, adopts printing and electroplating technology mutually insulated between described P pad and N pad.
Preferably, described substrate is Sapphire Substrate, and described N-type layer is n type gallium nitride layer, and described P-type layer is P type gallium nitride layer.
Preferably, described chip surface is evenly distributed with multiple N electrode hole.
Preferably, described P pad and P go between to be evenly distributed with on the first insulating barrier between electrode and multiple are easy to the P type contact hole that both are conductively connected.
Preferably, described N lead-in wire electrode is cylindrical shape.
Preferably, described N electrode and the P electrode that goes between that goes between all adopts a kind of material in Cr, Al, Ni, Ti, Au, Pt or the two or more alloy of at least a part of which to make.
Preferably, described barrier layer adopts a kind of material in Ti, W, Ni, Pt, Cr, Au or the two or more alloy of at least a part of which to make.
The invention has the beneficial effects as follows:
LED flip chip provided by the invention, at surface, reflecting layer deposit barrier layer, and N lead-in wire electrode and P lead-in wire electrode are set on barrier layer surface, owing to barrier layer, N electrode and the P electrode that goes between that goes between all adopts the material of not extinction and can effectively stoping to migrate from the metal material in reflecting layer, not only effectively solve " black surround " problem, and decrease the absorption of light, promote LED flip chip luminous efficiency and brightness.
Particularly; in this chip, N lead-in wire electrode and P lead-in wire electrode all adopt the material with highly reflective energy to deposit simultaneously forming; make P lead-in wire electrode both can do contact electrode; the effect on barrier layer can be played again relative to reflecting layer; realize the protective effect to reflecting layer at not extinction simultaneously; decrease the flow process that LED chip produces, reduce the preparation cost of chip.
[accompanying drawing explanation]
Figure 1A is LED flip chip structural representation of the prior art;
Fig. 1, Fig. 2 A, Fig. 2 to Fig. 7 are the schematic flow sheet of LED flip chip preparation method of the present invention;
Fig. 6 A, Fig. 7 A are the schematic diagram that LED flip chip of the present invention is perpendicular to substrate direction.
[detailed description of the invention]
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
But the present invention can implement being much different from alternate manner described here, and those skilled in the art can do similar popularization when without prejudice to intension of the present invention, therefore the present invention is by the following public restriction being embodied as. Secondly, the present invention utilizes schematic diagram to be described in detail, when describing the embodiment of the present invention in detail; for ease of explanation; representing that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, it should not limit the scope of protection of the invention at this.
A kind of LED flip chip containing reflecting layer, as shown in Figures 1 to 7, including Sapphire Substrate 1, N pad 26 and P pad 27, described Sapphire Substrate from bottom to top successively stratiform superposition be provided with n type gallium nitride layer 11, luminescent layer 12, P type gallium nitride layer 13, reflecting layer 15 and barrier layer 14, described barrier layer 14 adopts Ti, W, Ni, Pt, Cr, in Au, a kind of material or the two or more alloy of at least a part of which are made, n type gallium nitride layer 11, luminescent layer 12, P type gallium nitride layer 13, reflecting layer 15 and barrier layer 14 adopt the upper surface that etch process exposes Sapphire Substrate 1 to form a groove 3, the groove 3 arranged in length and breadth is by the n type gallium nitride layer 11 in Sapphire Substrate 1, luminescent layer 12, P type gallium nitride layer 13, reflecting layer 15 and barrier layer 14 are divided into the independent multiple chips that insulate each other, each chip surface forms multiple N electrode hole 4 being uniformly distributed and running through barrier layer 14, reflecting layer 15, P type gallium nitride layer 13, luminescent layer 12 and connect with n type gallium nitride layer 11.
Continue as shown in Figures 1 to 7, the barrier layer 14 of stacking on chip, reflecting layer 15 adopt after evaporation and photoetching process and form step 9 between P type gallium nitride layer 13 upper surface, described barrier layer 14 and reflecting layer 15 exposed surface adopt sputtering or evaporation process to form the P lead-in wire electrode 31 with wiring pattern, go between electrode 31 of described P is conductively connected with barrier layer 14, and described P goes between the surrounding side wall surface in electrode 31 covering barrier layer 14 and reflecting layer 15 and the upper surface on barrier layer 14; The cylindrical N lead-in wire electrode 32 that the interior employing sputtering in described N electrode hole 4 or evaporation process formation are conductively connected with n type gallium nitride layer 11, namely N lead-in wire electrode 32 adopts identical material to deposit simultaneously forming with P lead-in wire electrode 31; Wherein, N electrode 32 and the P electrode 31 that goes between that goes between all adopts a kind of material in Cr, Al, Ni, Ti, Au, Pt or the two or more alloy of at least a part of which to make, and N goes between the upper surface setting concordant with the upper surface of P lead-in wire electrode 31 of electrode 32.
Continue as shown in Figures 1 to 7, the surface of the gap, the upper surface of N lead-in wire electrode 32 and the P lead-in wire electrode 31 that are formed between the surface of groove 3, N electrode hole 4 and N lead-in wire electrode 32 adopts sputtering or spraying coating process to be coated with one layer of first insulating barrier 16 being easy to mutually insulated, and adopt photoetching and etching technique to offer the N-type contact hole 6 through with N lead-in wire electrode 32 upper surface at the first insulating barrier 16 upper surface, adopt photoetching and etching technique to be further opened with the P type contact hole 5 through with P lead-in wire electrode 31 upper surface at the first insulating barrier 16 upper surface; Wherein, N pad 26 is conductively connected with N lead-in wire electrode 32 by the N-type contact hole 6 arranged on the first insulating barrier 16, P pad 27 is conductively connected with P lead-in wire electrode 31 by the P type contact hole 5 arranged on the first insulating barrier 16, and adopts printing and electroplating technology mutually insulated between P pad 27 and N pad 26.
The preparation method that should contain the LED flip chip in reflecting layer, comprises the following steps:
Step one, as shown in Figure 1, in Sapphire Substrate 1, (it is called for short MOCVD by metallo-organic compound chemical gaseous phase deposition method, full name Metal-organicChemicalVaporDeposition), at the upper surface growing epitaxial layers of Sapphire Substrate 1, described epitaxial layer growth process is followed successively by: at Sapphire Substrate 1 superficial growth n type gallium nitride layer 11, n type gallium nitride layer grows luminescent layer 12, growing P-type gallium nitride layer 13 on luminescent layer;
Step 2, as shown in Fig. 2 A, Fig. 2, adopt evaporation and photoetching process, cover reflecting layer 15 and barrier layer 14 successively, described reflecting layer 15 adopts a kind of material in aluminum, silver or alloy material that both make, barrier layer 14 adopts not extinction and can effectively stop the material that the metal material in reflecting layer 15 migrates to be made, and then reaches effectively to promote efficiency and the brightness of LED;
Step 3, as shown in Figure 3, by epitaxial layer is adopted ICP etch process, groove 3 is formed at described epitaxial layer, described groove 3 exposes the surface of Sapphire Substrate 1, the epitaxial layer in Sapphire Substrate 1 is made to form the independent chip that insulate each other, chip is performed etching simultaneously, described chip surface formed run through barrier layer 14, reflecting layer 15, P type gallium nitride layer 13, luminescent layer 12, until rest on the N electrode hole 4 on n type gallium nitride layer 11 surface, the quantity in N electrode hole 4 is multiple and is uniformly distributed (as shown in Figure 6A) at chip surface;
Step 4, as it is shown on figure 3, by adopting evaporation and photoetching process, on the barrier layer 14 of stacking, reflecting layer 15 form step 9 with P type gallium nitride layer 13 surface;
Step 5, as shown in Figure 4, by sputtering or evaporation process, on barrier layer 14, reflecting layer 15 exposed surface forms the P lead-in wire electrode 31 with wiring pattern, adopt sputtering or evaporation process to form cylindrical N lead-in wire electrode 32 in N electrode hole 4 simultaneously, described N lead-in wire electrode 32 is electrically connected to form Ohmic contact with n type gallium nitride layer 11, described P lead-in wire electrode 31 electrically connects with barrier layer 14, described P goes between electrode 31 covering barrier layer 14, reflecting layer 15 surrounding side wall surface and barrier layer 14 upper surface, described N lead-in wire electrode 32 and P lead-in wire electrode 31 all adopt the Cr with highly reflective energy, Al, Ni, Ti, Au, a kind of material or the two or more alloy of at least a part of which and deposit simultaneously forming in Pt, make P lead-in wire electrode 31 both can do contact electrode, the effect on barrier layer can be played again relative to reflecting layer 15, realize the protective effect to reflecting layer 15 at not extinction simultaneously, decrease the flow process that LED chip produces, reduce chip preparation cost,
Step 6, as shown in Figure 5, the gap formed between the surface of chip groove 3, N electrode hole 4 and N lead-in wire electrode 32 and the surface of P lead-in wire electrode 31, adopting sputtering or spraying coating process to be coated with a layer thickness is 1um～2.5um the first insulating barrier 16 being easy to mutually insulated, and described first insulating barrier 16 adopts the one of aluminium nitride, silicon dioxide, silicon nitride, aluminium sesquioxide, Bragg reflecting layer DBR (TiO2/SiO2), silica gel, resin or acrylic acid to make;
Step 7, as shown in Fig. 6, Fig. 6 A, photoetching and etching technique is adopted to punch on the first insulating barrier 16 surface, N-type contact hole 6 and P type contact hole 5 is etched respectively on the first insulating barrier 16 surface, wherein, N-type contact hole 6 is connected with N lead-in wire electrode 32 surface, and P type contact hole 5 is connected with P lead-in wire electrode 31 surface, and chip surface is evenly distributed with multiple N-type contact hole 6 and multiple P type contact hole 5;
Step 8, as shown in Fig. 7 A, Fig. 7, N go between electrode 32, P go between electrode 31 exposed surface on and be positioned at N go between electrode 32 and P go between electrode 31 the first insulating barrier 16 each other surface on, N pad 26 and the P pad 27 of mutually insulated is manufactured by printing and electroplating technology, P pad 27 and N pad 26 all adopt in aluminum, nickel, titanium, platinum, gold a kind of material to make and thickness is 0.5um～2um, is spaced apart equal to or more than 150um between described P pad 27 and N pad 26; Wherein, N pad 26 is contacted with N lead-in wire electrode 32 by N-type contact hole 6, and P pad 27 is contacted with P lead-in wire electrode 31 by P type contact hole 5, so far, completes the processing and manufacturing of whole LED flip chip.
Embodiment described above is simply presently preferred embodiments of the present invention, not limits the practical range of the present invention with this, except situation about enumerating in specific embodiment; All equivalence changes made according to the shape of the present invention, structure and principle, all should be covered by protection scope of the present invention.
Claims (7)
1. the LED flip chip containing reflecting layer, including substrate, N pad and P pad, it is characterised in that:
Described substrate from bottom to top successively stratiform superposition be provided with N-type layer, luminescent layer, P-type layer, reflecting layer and barrier layer, N-type layer, luminescent layer, P-type layer, reflecting layer and barrier layer adopt the upper surface that etch process exposes substrate to form a groove, and the N-type layer on substrate, luminescent layer, P-type layer, reflecting layer and barrier layer are divided into the independent multiple chips that insulate each other by the groove arranged in length and breadth;
Described chip surface is formed and runs through barrier layer, reflecting layer, P-type layer, luminescent layer and the N electrode hole connected with N-type layer;
On described chip, the barrier layer of stacking, reflecting layer adopt after evaporation and photoetching process and form step between P-type layer upper surface, described barrier layer and reflecting layer exposed surface adopt sputtering or evaporation process to form the P lead-in wire electrode with wiring pattern, go between electrode and barrier layer of described P is conductively connected, and described P goes between the surrounding side wall surface in electrode covering barrier layer and reflecting layer and the upper surface on barrier layer;
Sputtering or evaporation process is adopted to form the N lead-in wire electrode being conductively connected with N-type layer in described N electrode hole;
The material that described N lead-in wire electrode is identical with P lead-in wire electrode employing deposits simultaneously forming;
The surface of the gap, the upper surface of N lead-in wire electrode and the P lead-in wire electrode that are formed between the surface of described groove, described N electrode hole and N lead-in wire electrode adopts sputtering or spraying coating process to be coated with one layer of first insulating barrier being easy to mutually insulated, described first insulating barrier upper surface adopts photoetching and etching technique to offer the N-type contact hole through with N lead-in wire electrode top, and described first insulating barrier upper surface adopts photoetching and etching technique to be further opened with the P type contact hole through with P lead-in wire electrode top;
The N-type contact hole that described N pad is arranged by the first insulating barrier is connected with N lead-in wire electrodes conduct, the P type contact hole that described P pad is arranged by the first insulating barrier is connected with P lead-in wire electrodes conduct, adopts printing and electroplating technology mutually insulated between described P pad and N pad.
2. a kind of LED flip chip containing reflecting layer according to claim 1, it is characterised in that described substrate is Sapphire Substrate, and described N-type layer is n type gallium nitride layer, described P-type layer is P type gallium nitride layer.
3. a kind of LED flip chip containing reflecting layer according to claim 1, it is characterised in that described chip surface is evenly distributed with multiple N electrode hole.
4. a kind of LED flip chip containing reflecting layer according to claim 1, it is characterised in that described P pad and P go between to be evenly distributed with on the first insulating barrier between electrode and multiple be easy to the P type contact hole that both are conductively connected.
5. a kind of LED flip chip containing reflecting layer according to claim 1, it is characterised in that described N lead-in wire electrode is cylindrical shape.
6. a kind of LED flip chip containing reflecting layer according to claim 1, it is characterised in that described N electrode and the P electrode that goes between that goes between all adopts a kind of material in Cr, Al, Ni, Ti, Au, Pt or the two or more alloy of at least a part of which to make.
7. a kind of LED flip chip containing reflecting layer according to claim 1, it is characterised in that described barrier layer adopts a kind of material in Ti, W, Ni, Pt, Cr, Au or the two or more alloy of at least a part of which to make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201520734798.2U CN205319180U (en) | 2015-09-21 | 2015-09-21 | LED face down chip who contains reflection stratum |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520734798.2U CN205319180U (en) | 2015-09-21 | 2015-09-21 | LED face down chip who contains reflection stratum |
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| CN205319180U true CN205319180U (en) | 2016-06-15 |
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| CN201520734798.2U Withdrawn - After Issue CN205319180U (en) | 2015-09-21 | 2015-09-21 | LED face down chip who contains reflection stratum |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489721A (en) * | 2015-09-21 | 2016-04-13 | 大连德豪光电科技有限公司 | LED flip chip comprising reflecting layer and preparation method of LED flip chip |
| CN108428774A (en) * | 2018-03-29 | 2018-08-21 | 映瑞光电科技(上海)有限公司 | A kind of LED chip |
-
2015
- 2015-09-21 CN CN201520734798.2U patent/CN205319180U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489721A (en) * | 2015-09-21 | 2016-04-13 | 大连德豪光电科技有限公司 | LED flip chip comprising reflecting layer and preparation method of LED flip chip |
| CN105489721B (en) * | 2015-09-21 | 2018-02-27 | 大连德豪光电科技有限公司 | A kind of LED flip chip containing reflecting layer and preparation method thereof |
| CN108428774A (en) * | 2018-03-29 | 2018-08-21 | 映瑞光电科技(上海)有限公司 | A kind of LED chip |
| CN108428774B (en) * | 2018-03-29 | 2019-08-23 | 映瑞光电科技(上海)有限公司 | A kind of LED chip |
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Granted publication date: 20160615 Effective date of abandoning: 20180227 |