CN108428774A - A kind of LED chip - Google Patents
A kind of LED chip Download PDFInfo
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- CN108428774A CN108428774A CN201810272287.1A CN201810272287A CN108428774A CN 108428774 A CN108428774 A CN 108428774A CN 201810272287 A CN201810272287 A CN 201810272287A CN 108428774 A CN108428774 A CN 108428774A
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- layer
- led chip
- light emitting
- emitting diode
- insulating layer
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- 230000004888 barrier function Effects 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 26
- 238000000576 coating method Methods 0.000 claims description 22
- 239000011248 coating agent Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000004411 aluminium Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- 238000002310 reflectometry Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000011435 rock Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 230000007480 spreading Effects 0.000 abstract description 4
- 238000003892 spreading Methods 0.000 abstract description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000009931 harmful effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H01L33/46—
-
- H01L33/145—
-
- H01L33/44—
Landscapes
- Led Devices (AREA)
Abstract
The present invention provides a kind of LED chip, the LED chip includes light emitting diode, reflecting layer, barrier layer and insulating layer, the light emitting diode is located on substrate, the reflecting layer is located on the light emitting diode, the barrier layer is located on the reflecting layer, the reflecting layer and the barrier layer form ladder-type structure on the light emitting diode, and the insulating layer covers the light emitting diode, the reflecting layer and the barrier layer.In LED chip provided by the invention, ladder-type structure is formed by the reflecting layer that will be located on light emitting diode and the barrier layer on reflecting layer, the area on barrier layer is set to be less than the area in reflecting layer, it is covered again by insulating layer, electric leakage exception etc. is caused so as to eliminate " black-tape " phenomenon and can prevent the metal in reflecting layer from spreading or moving to LED area, improves the performance of LED chip.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of LED chip.
Background technology
The reflecting layer that metal would generally be used in LED (Light Emitting Diode) chip, to improve the anti-of light
Penetrate rate, but the metal in reflecting layer heated and electric current by when thermal diffusion and ELECTROMIGRATION PHENOMENON can occur, so in chip
The reflecting layer that the fully wrapped around firmly metal in the barrier layer (Barrier) for preventing metal from spreading can be used in processing procedure, to prevent reflecting
The thermal diffusion and electromigration of metal cause harmful effect in layer, to preferably promote the unfailing performance of LED chip.
But in the prior art, as shown in Figure 1, the reflecting layer 2 on light emitting diode 1 is usually blocked the package of layer 3,
There is a problem of that a comparison is serious using the fully wrapped around method in barrier layer 3, since the reflectivity on barrier layer 3 is relatively low, in this way
So that the reflectivity that barrier layer 3 wraps the fringe region in reflecting layer 2 is relatively low, to form the phenomenon that being commonly called as " black-tape ".Although
The area in reflecting layer 2 and the height of reflectivity can directly determine the brightness of LED chip, and the still generation of " black-tape " phenomenon can make
Obtaining brightness when LED chip shines reduces, in the performance for being reduction of LED.
Therefore, how to improve the performance of LED chip is that those skilled in the art need the technical problem solved.
Invention content
The purpose of the present invention is to provide a kind of LED chips, to be improved with the performance for solving LED chip in the prior art
The problem of.
In order to solve the above technical problems, the present invention provides a kind of LED chip, the LED chip includes light emitting diode, anti-
Layer, barrier layer and insulating layer are penetrated, the light emitting diode is located on substrate, and the reflecting layer is located on the light emitting diode,
The barrier layer is located on the reflecting layer, and the reflecting layer and the barrier layer form stairstepping on the light emitting diode
Structure, the insulating layer cover the light emitting diode, the reflecting layer and the barrier layer.
Optionally, further include coating in the LED chip, the coating is located on the insulating layer and in institute
It states above ladder-type structure.
Optionally, in the LED chip, the coating covers the unlapped region in reflecting layer.
Optionally, in the LED chip, the material of the coating includes silver or aluminium, the reflectivity of the coating
More than 80%.
Optionally, in the LED chip, the insulating layer include the first insulating layer and second insulating layer, described first
Insulating layer covers the side of the light emitting diode, and the second insulating layer covers first insulating layer and described luminous two
Pole pipe, the reflecting layer and the barrier layer.
Optionally, in the LED chip, the material of the insulating layer include silica, silicon nitride, silicon oxynitride or
One or more combinations in alundum (Al2O3).
Optionally, in the LED chip, the thickness of the insulating layer is more thanThe insulating layer passes through chemistry
Vapor deposition mode or atomic layer deposition mode are formed.
Optionally, further include conductive layer in the LED chip, the conductive layer is located at light emitting diode and reflecting layer
Between, the material of the conductive layer includes tin indium oxide.
Optionally, in the LED chip, the light emitting diode includes the first semiconductor layer being sequentially distributed, volume
Sub- well layer and the second semiconductor layer, first semiconductor layer are located on the substrate, and the material of first semiconductor layer is N
The material of type gallium nitride, second semiconductor layer is p-type gallium nitride.
Optionally, in the LED chip, it is silver or aluminium to hold and weigh the material in this reflecting layer.
Optionally, in the LED chip, the material on the barrier layer includes one kind in chromium, gold, platinum, titanium and nickel
Or a variety of combination.
In conclusion in LED chip provided by the invention, pass through the reflecting layer and position that will be located on light emitting diode
Ladder-type structure is formed in the barrier layer on reflecting layer, so that the area on barrier layer is less than the area in reflecting layer, then pass through insulating layer
It is covered, so as to eliminate " black-tape " phenomenon and can prevent the metal in reflecting layer from spreading or moving to LED area
Cause electric leakage abnormal etc., improve the performance of LED chip.
Description of the drawings
Fig. 1 is the cut-away view of the LED chip of the prior art；
Fig. 2 is the cut-away view of the LED chip of one embodiment of the invention；
Fig. 3 is the cut-away view of the LED chip of another embodiment of the present invention；
Fig. 4 is the cut-away view of the LED chip of a further embodiment of the present invention；
Fig. 5 is the cut-away view of the LED chip of further embodiment of this invention；
Wherein, 1,10- light emitting diodes, 2, the reflecting layer 20-, 3, the barrier layers 30-, 40- insulating layers, the first insulating layers of 41-,
42- second insulating layers, 50- substrates, 60- coatings, 70 conductive layers.
Specific implementation mode
In order to keep objects, features and advantages of the present invention more obvious and easy to understand, attached drawing is please referred to.It should be clear that this explanation
Structure, ratio, size etc. depicted in book institute accompanying drawings, only to coordinate the revealed content of specification, for being familiar with this
The personage of technology understands and reads, and is not limited to the enforceable qualifications of the present invention, therefore does not have technical essence meaning
Justice, the modification of any structure, the change of proportionate relationship or the adjustment of size are not influencing the effect of present invention can be generated and institute
Under the purpose that can reach, should all still it fall in the range of disclosed technology contents obtain and can cover.
Core of the invention thought is to eliminate the harmful effect brought to LED chip of " black-tape ", however if only adopts
The problem of being less than the mode of the area in reflecting layer with the area on the barrier layer for making to be formed, poor reliability can be caused, in fuel factor
Or under the action of field effect, the metal in reflecting layer can spread or move to the region of light emitting diode, influence LED chip
Performance, LED chip provided by the invention can't have an impact the other problems of reliability while elimination " black-tape ", to
The effective performance for improving LED chip.
As shown in Fig. 2, the present invention provides a kind of LED chip, the LED chip include light emitting diode 10, reflecting layer 20,
Barrier layer 30 and insulating layer 40, the light emitting diode 10 are located on substrate 50, and the reflecting layer 20 is located at the light-emitting diodes
On pipe 10, the barrier layer 30 is located on the reflecting layer 20, and the reflecting layer 20 and the barrier layer 30 are described luminous two
Ladder-type structure is formed in pole pipe 10, the insulating layer 40 covers the light emitting diode 10, the reflecting layer 20 and the resistance
Barrier 30.
Shown in Fig. 2, the LED chip further includes coating (Covering Layer) 60, the coating
60 are located on the insulating layer 40 and above the ladder-type structure, and ladder-type structure is formed in reflecting layer 20 and barrier layer 30
When, the area in reflecting layer 20 can be less than the area of light emitting diode 10, and the area on barrier layer 30 can be less than the face in reflecting layer 20
Product can be shone the reflective surface area in time by coating 30 to increase light emitting diode 10 in the present invention, and coating 30 can be anti-
It penetrates due to 20 unlapped region of reflecting layer, to achieve the purpose that promote brightness, wherein coating 30 can be formed by sputter.
In coverage area, the coating 60 covers 20 unlapped region of the reflecting layer, and reflecting layer 20 does not cover
Region refer to and distinguished with the outer edge in reflecting layer 20 relative to light emitting diode 10, that is, reflecting layer 20 fails when looking down
The marginal portion of light emitting diode 10 is sheltered from, certainly when coating 60 is covered, can be covered right over reflecting layer 20
The region of formula reaches better effect, and the other side far from reflecting layer 20 can be covered to the edge of LED chip but do not made
Limitation can realize that coating increases the reflective surface area for the light that light emitting diode 10 is sent out.It is understood that for convenience
The purpose of expression and diagram has only carried out unilateral description, i.e. right half in attached drawing 2 in above-described embodiment, that is to say, that
The structure of arbitrary a side or other symmetric forms for LED chip can scheme using the present invention, disappear to reach
Except " black-tape " phenomenon, the purpose of the performance of LED chip is improved, in embodiment by taking vertical inverted structure as an example.
Optionally, the material of the coating 60 includes silver or aluminium, and the reflectivity of the coating 60 is more than 80%, silver and
Aluminium can form preferable reflecting surface, by being formed more than 80% reflectivity come the not reflectible light of reflecting reflective layer,
The attachment of coating 60 can be made to be formed on groove, the coating 60 formed in this way can more by forming groove on insulating layer 40
Good is attached on insulating layer 40, prevents coating 60 from occurring falling off.
As shown in figure 3, the insulating layer 40 includes the first insulating layer 41 and the second insulating layer 42, first insulation
Layer 41 covers the side of the light emitting diode 10, can be by the first insulating layer 41 come offside after forming light emitting diode 10
While protected, it can prevent subsequent technique from being damaged caused by forming reflecting layer etc., the second insulating layer 42 covers described the
The one insulating layer 41 and light emitting diode 10, the reflecting layer 20 and barrier layer 30, to the insulating layer 40 formed
To protect LED chip.
In the selection of material, the material of the insulating layer 40 includes silica, silicon nitride, silicon oxynitride or three oxidations
One or more combinations in two aluminium, these materials can have preferable compactness and insulation performance, insulating layer to play protection
Effect, thus prevent the metal in reflecting layer 20 to external diffusion since insulating layer 40 can cover light emitting diode, simultaneously
The influence from extraneous air, moisture etc. is protected as a whole.In a particular embodiment, insulating layer can be divided into
It is respectively formed twice, the second insulating layer that the first insulating layer of covering light emitting diode side can be respectively formed and covered comprehensively,
It reduces technological requirement and the processing of the electrode of light emitting diode can be facilitated.
Optionally, the thickness of the insulating layer 40 is more thanReach preferable protective action by above-mentioned thickness, by
In the region and irregular that insulating layer 40 covers, it is only necessary to which the requirement for meeting lower limit for the upper limit and is not construed as limiting, for first
Insulating layer 41 and the thickness of second insulating layer 42 can press specific product respectively and be arranged, and the insulating layer 40 passes through chemical gaseous phase
Depositional mode (PECVD) or atomic layer deposition mode (ALD) formation, preferably can be used atomic layer deposition mode.
In order to realize electrical connection, as shown in figure 4, the LED chip further includes conductive layer 70, the conductive layer 70 is located at hair
Between optical diode 10 and reflecting layer 20, the material of the conductive layer 70 includes tin indium oxide, meets difference by conductive layer 70
The needs of the electrical connection of the light emitting diode 10 of product, tin indium oxide have good electric conductivity and the transparency.
As shown in figure 5, the light emitting diode 10 includes the first semiconductor layer 11, the multiple quantum well layer 12 being sequentially distributed
(MQWS) it is located on the substrate 50 with the second semiconductor layer 13, first semiconductor layer 11, first semiconductor layer 11
Material be n type gallium nitride, the material of second semiconductor layer 13 is p-type gallium nitride, by being formed in the first semiconductor layer
11 and second semiconductor layer 13 between multiple quantum well layer 12 formed constraint carrier electronics or hole potential well, improve shine
The working efficiency of diode 10.The material of wherein substrate 50 includes sapphire (Sapphire), gallium nitride, silicon or silicon carbide, is led to
Different materials is crossed to adapt to the needs of different products.
Optionally, the material in the reflecting layer 20, which is silver or aluminium, reflecting layer 20, can be set up directly on light emitting diode 10
Realize the reflection of light.
Optionally, the material on the barrier layer 30 includes in chromium (Cr), gold (Au), platinum (Pt), titanium (Ti) and nickel (Ni)
The physicochemical properties of one or more combinations, the material on barrier layer 30 are more more stable than reflecting layer, prevent in fuel factor or
Harmful effect caused by metal diffusion or migration under the action of field effect in reflecting layer 20.
The structure of LED chip provided by the invention is applicable to flip-chip, vertical chip, vertical flip-chip, upside-down mounting
High-voltage chip, vertical upside-down mounting high-voltage chip etc. have the chip of reflection layer structure, equally may be implemented to eliminate " black-tape " phenomenon, from
And improve the purpose of luminescent properties.
In conclusion in LED chip provided by the invention, pass through the reflecting layer and position that will be located on light emitting diode
Ladder-type structure is formed in the barrier layer on reflecting layer, so that the area on barrier layer is less than the area in reflecting layer, then pass through insulating layer
It is covered, so as to eliminate " black-tape " phenomenon and can prevent the metal in reflecting layer from spreading or moving to LED area
Cause electric leakage abnormal etc., improve the performance of LED chip.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (11)
1. a kind of LED chip, which is characterized in that the LED chip includes：
Light emitting diode, the light emitting diode are located on substrate；
Reflecting layer and barrier layer, the reflecting layer are located on the light emitting diode, and the barrier layer is located at the reflecting layer
On, the reflecting layer and the barrier layer form ladder-type structure on the light emitting diode；
Insulating layer, the insulating layer cover the light emitting diode, the reflecting layer and the barrier layer.
2. LED chip according to claim 1, which is characterized in that the LED chip further includes coating, the covering
Layer is located on the insulating layer and above the ladder-type structure.
3. LED chip according to claim 2, which is characterized in that it is unlapped that the coating covers the reflecting layer
Region.
4. LED chip according to claim 2, which is characterized in that the material of the coating includes silver-colored or aluminium, described to cover
The reflectivity of cap rock is more than 80%.
5. LED chip according to claim 1, which is characterized in that the insulating layer includes that the first insulating layer and second are exhausted
Edge layer, first insulating layer cover the side of the light emitting diode, and the second insulating layer covers first insulating layer
And the light emitting diode, the reflecting layer and the barrier layer.
6. according to the LED chip described in any one of claim 1-5, which is characterized in that the material of the insulating layer includes
One or more combinations in silica, silicon nitride, silicon oxynitride or alundum (Al2O3).
7. LED chip according to claim 6, which is characterized in that the thickness of the insulating layer is more thanIt is described exhausted
Edge layer is formed by chemical vapor deposition manner or atomic layer deposition mode.
8. LED chip according to claim 1, which is characterized in that the LED chip further includes conductive layer, the conduction
For layer between light emitting diode and reflecting layer, the material of the conductive layer includes tin indium oxide.
9. according to the LED chip described in any one of claim 1-5, which is characterized in that the light emitting diode include according to
The first semiconductor layer, multiple quantum well layer and the second semiconductor layer of secondary distribution, first semiconductor layer are located on the substrate,
The material of first semiconductor layer is n type gallium nitride, and the material of second semiconductor layer is p-type gallium nitride.
10. according to the LED chip described in any one of claim 1-5, which is characterized in that the material in the reflecting layer is silver
Or aluminium.
11. according to the LED chip described in any one of claim 1-5, which is characterized in that the material on the barrier layer includes
One or more combinations in chromium, gold, platinum, titanium and nickel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810272287.1A CN108428774B (en) | 2018-03-29 | 2018-03-29 | A kind of LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810272287.1A CN108428774B (en) | 2018-03-29 | 2018-03-29 | A kind of LED chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108428774A true CN108428774A (en) | 2018-08-21 |
| CN108428774B CN108428774B (en) | 2019-08-23 |
Family
ID=63160050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810272287.1A Active CN108428774B (en) | 2018-03-29 | 2018-03-29 | A kind of LED chip |
Country Status (1)
| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034220A (en) * | 2019-04-16 | 2019-07-19 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
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| US20050179051A1 (en) * | 1997-12-15 | 2005-08-18 | You Kondoh | III-Nitride semiconductor light emitting device having a silver p-contact |
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| CN103765615A (en) * | 2011-06-24 | 2014-04-30 | 克利公司 | LED structure with enhanced mirror reflectivity |
| CN105489721A (en) * | 2015-09-21 | 2016-04-13 | 大连德豪光电科技有限公司 | LED flip chip comprising reflecting layer and preparation method of LED flip chip |
| CN205319180U (en) * | 2015-09-21 | 2016-06-15 | 大连德豪光电科技有限公司 | LED face down chip who contains reflection stratum |
| CN104300056B (en) * | 2014-10-11 | 2017-07-07 | 广东晶科电子股份有限公司 | A kind of preparation method of the flip LED chips of high reliability, LED component and LED chip |
-
2018
- 2018-03-29 CN CN201810272287.1A patent/CN108428774B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050179051A1 (en) * | 1997-12-15 | 2005-08-18 | You Kondoh | III-Nitride semiconductor light emitting device having a silver p-contact |
| CN101271949B (en) * | 2004-11-11 | 2010-09-29 | 晶元光电股份有限公司 | Production method of LED |
| CN103765615A (en) * | 2011-06-24 | 2014-04-30 | 克利公司 | LED structure with enhanced mirror reflectivity |
| CN104300056B (en) * | 2014-10-11 | 2017-07-07 | 广东晶科电子股份有限公司 | A kind of preparation method of the flip LED chips of high reliability, LED component and LED chip |
| CN105489721A (en) * | 2015-09-21 | 2016-04-13 | 大连德豪光电科技有限公司 | LED flip chip comprising reflecting layer and preparation method of LED flip chip |
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| CN110034220A (en) * | 2019-04-16 | 2019-07-19 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
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| CN108428774B (en) | 2019-08-23 |
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