CN104576863A - High-brightness light emitting diode and fabricating method thereof - Google Patents
High-brightness light emitting diode and fabricating method thereof Download PDFInfo
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- CN104576863A CN104576863A CN201510061354.1A CN201510061354A CN104576863A CN 104576863 A CN104576863 A CN 104576863A CN 201510061354 A CN201510061354 A CN 201510061354A CN 104576863 A CN104576863 A CN 104576863A
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- magnesium
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- resilient coating
- high brightness
- gap current
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- 238000000034 method Methods 0.000 title claims abstract description 21
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000011777 magnesium Substances 0.000 claims abstract description 20
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 5
- 238000007788 roughening Methods 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims description 24
- 238000000576 coating method Methods 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 9
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
- 230000008021 deposition Effects 0.000 abstract description 2
- 238000009825 accumulation Methods 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 230000005611 electricity Effects 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229960000583 acetic acid Drugs 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- Engineering & Computer Science (AREA)
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Abstract
The invention discloses a high-brightness light emitting diode and a fabricating method thereof, and belongs to the technical field of photoelectrons. The fabricating method comprises the following steps: when a P-GaP current expanding layer of an epitaxial wafer is fabricated, using magnesium as a doping element; when a pattered contact is fabricated, roughening the surface of the P-GaP current expanding layer except for the contact point by adopting a wet process, wherein the roughening depth is 200-400nm; fabricating a first electrode behind a deposition material on one surface of the P-GaP current expanding layer with the pattered contact point is a transparent conductive film of indium tin oxide; and fabricating a second electrode on the other surface of a permanent substrate GaAs. Because the transparent conductive film of indium tin oxide has a good current expanding capability, the electrode is used for uniformly injecting a current into the surface of the whole chip by virtue of the transparent film of indium tin oxide and then the contact point, the accumulation of the current below the electrode is reduced, the invalid injection of the current is reduced, and the light emitting efficiency of a product is improved.
Description
Technical field
The invention belongs to photoelectron technical field, particularly the manufacturing technology field of AlGaInP quaternary series LED.
Background technology
Quaternary system AlGaInP is a kind of semi-conducting material with direct broad-band gap, has been widely used in the preparation of multiple opto-electronic device.Due to material emission wave band can the ruddiness of covering visible light to yellow green wave band, the visible light emitting diode made thus is subject to extensive concern.
Traditional AlGaInP light-emitting diode in vertical structure by thick P-GaP current extending carry out extending transversely after by pulse current injectingt luminous zone, but because P-GaP current expansion is limited in one's ability, base part near zone current density is higher, the zone current density that ionization electrode is far away is lower, cause overall current injection efficiency on the low side, thus reduce the light extraction efficiency of light-emitting diode.
High brightness reversed polarity AlGaInP chip adopts bonding technology to realize substrate displacement, the silicon substrate (thermal conductivity of silicon is about 1.5W/K.cm) using good in thermal property replaces gallium arsenide substrate (thermal conductivity of GaAs is about 0.8W/K.cm), chip has more low-heat resistance, and heat dispersion is better.The Omni-directional reflector technology of high reflectance is adopted to improve reflection efficiency.Adopt surface texture technology to improve the total reflection of chip and encapsulating material interface, brightness can be higher.But because making step is various, technique is very complicated, and cause cost of manufacture higher, rate of finished products is low.
Summary of the invention
The present invention seeks to propose a kind of high brightness LED that can promote light-emitting diode light extraction efficiency.
Technical solution of the present invention is: set gradually N-GaAs transition zone, AlAs/AlGaAs reflector, N-AlGaInP lower limit layer, MQW multiple quantum well active layer, P-AlGaInP upper limiting layer, P-GaInP resilient coating, magnesium-doped P-GaP current extending, indium tin oxide transparent film and the first electrode in the one side of permanent substrate GaAs, second electrode is set at the another side of permanent substrate GaAs, it is characterized in that arranging patterned contact point between described magnesium-doped P-GaP current extending and indium tin oxide transparent film.
Because indium tin oxide transparent film has good current expansion ability, uniform current by this indium tin oxide transparent film, then is injected into whole chip surface by contact point by electrode, thus reduces electric current the gathering of side under the electrodes, decrease the invalid injection of electric current, improve luminous efficiency.
The thickness of magnesium-doped P-GaP current extending of the present invention is 2000nm ~ 4000nm.
Wherein, in described magnesium-doped P-GaP current extending, the doping content close to the magnesium of resilient coating is 4 × 10
17cm
-3~ 8 × 10
17cm
-3, the doping content away from the magnesium of resilient coating is 8 × 10
17cm
-3~ 1 × 10
19cm
-3, the doping depth away from the magnesium of resilient coating is 300nm ~ 500nm.
Namely concentration magnesium-doped in the magnesium-doped P-GaP current extending longitudinally distribution in staged, the doping content more close to the magnesium of resilient coating is lower.Its role is to, the region that longitudinal concentration adopts staged distribution can ensure that surface is roughened still can form certain electricity with indium tin oxide and contact, and alleviates contact point contact.P-GaP close to resilient coating does not need the contact that just can be formed of adulterating, and top layer needs to form electricity contact, so need high doping content with indium tin oxide.
Doping content close to the magnesium of resilient coating is 4 × 10
17cm
-3~ 8 × 10
17cm
-3, can ensure that P-GaP has good current expansion ability; Doping content away from the magnesium of resilient coating is 8 × 10
17cm
-3~ 1 × 10
19cm
-3, same P-GaP can be guaranteed and form good electricity contact; Away from 300nm ~ 500nm doping depth of the magnesium of resilient coating, can ensure still can form good electricity contact, to alleviate the pressure of contact point pulse current injectingt with P-GaP after alligatoring.
In addition, the thickness of indium tin oxide transparent film of the present invention is 250 ~ 300nm.This thickness is the best optical thickness being played enhanced shine by the corresponding ruddiness of optical computing gained.
Contact point of the present invention is cylindrical, and diameter is 3 ~ 5 μm, is highly 200 ~ 400nm.The cylindrical wet processing that is easy to is implemented, and not easily by lateral erosion, diameter 3 ~ 5 μm, is highly that 200 ~ 400nm optimizes preferred process window for contrast, under the prerequisite ensureing enough electricity contacts area, does not affect bright dipping.
Another object of the present invention proposes a kind of manufacture method that can realize the above-mentioned high brightness LED of high finished product rate and low cost.
Manufacture method of the present invention comprises the following steps:
1) epitaxial wafer is made: at one side epitaxial growth N-GaAs resilient coating, AlAs/AlGaAs reflector, N-AlGaInP lower limit layer, MQW multiple quantum well active layer, P-AlGaInP upper limiting layer, P-GaInP resilient coating, the P-GaP current extending successively of permanent substrate GaAs;
2) graphical contact point is made on epitaxial wafer surface;
3) at laminated whole the deposit transparent conductive film of the P-GaP current expansion with graphical contact point;
4) on transparent conductive film, the first electrode is made;
5) the second electrode is made at the another side of permanent substrate GaAs;
6) RTA is adopted to carry out annealing in process;
The invention is characterized in:
When making the P-GaP current extending of epitaxial wafer, take magnesium as doped chemical;
While the graphical contact point of making, the P-GaP current extending surface beyond butt contact adopts wet method to carry out roughening treatment, and the alligatoring degree of depth is 200 ~ 400nm;
The material of deposit transparent conductive film is indium tin oxide.
The P-GaP current extending making contact point that the present invention has staged doping content forms good ohmic contact with indium tin oxide, the alligatoring degree of depth of certain depth is guaranteed indium tin oxide can not be too high with the contact berrier in alligatoring face, thus change the distribution of pulse current injectingt, effective motor current injection efficiency, improve the luminous intensity of light-emitting diode, highly doped regions is made into patterned contact point, ohmic contact is formed with indium and tin oxide film, surface roughening process is carried out by wet solution in other regions of contact point, reduce the generation of P-GaP surface total reflection, promote light extraction efficiency.Electric current flows into indium and tin oxide film layer through the first electrode, indium and tin oxide film layer lateral resistance is less than the contact resistance of same P-GaP, electric current first carry out on indium tin oxide extending transversely after, be injected in P-GaP current extending through equally distributed contact point, and then be with active layer, motor current injection efficiency greatly, improves the luminous intensity of light-emitting diode.Simultaneously because technique is simple, have traditional structure light-emitting diode cost low, the advantage that yield is high, suitable batchization is produced, and is beneficial to the product obtaining high-quality, low cost.
In addition, in order to ensure that indium tin oxide forms good electricity contact with P-GaP, ensure that substrate GaAs forms good electricity contact with the second electrode, RTA annealing temperature of the present invention is 350 ~ 450 DEG C, annealing time 5 ~ 20s.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of finished product of the present invention.
Embodiment
One, be that manufacturing step of the present invention is as follows as shown in Figure 1:
1, epitaxial wafer is made: utilize MOCVD device on a permanent substrate GaAs101 face, grow N-GaAs transition zone 102, AlAs/AlGaAs reflector 103, N-AlGaInP lower limit layer 104, MQW multiple quantum well active layer 105, P-AlGaInP upper limiting layer 106, P-GaInP resilient coating 107, magnesium-doped P-GaP current extending 108 successively.
Wherein magnesium-doped P-GaP current extending 108 preferred thickness 3000nm, doped chemical is magnesium (Mg), to guarantee to form good ohmic contact, the top layer doping content longitudinally distribution in staged: the doping content close to the magnesium of resilient coating is 7 × 10
17cm
-3, away from the doping content of the magnesium of resilient coating (i.e. top layer) from 8 × 10
17cm
-3to 1 × 10
19cm
-3, top layer doping depth is 400nm.
2, utilize 511 cleaning fluid cleaning P-GaP current extendings 108, spin coating positive photoresist on P-GaP current extending 108, by exposure, development, produces circular pattern.After playing glue by plasma again, utilize the acid iodide that volume ratio is 1:5:5: hydrofluoric acid: glacial acetic acid mixed liquor, alligatoring 90s, alligatoring goes out the rough morphology of surface uniform, and the alligatoring degree of depth is 200 ~ 400nm.Produce patterned contact point 110, by removing photoresist, liquid removes photomask surface glue simultaneously.That is, protected with photoresist in the region prepared as contact point 110, wet method alligatoring is carried out in other regions, should both realize simultaneously.
Patterned contact point 110 to be equally distributedly cylindrically made up of multiple, and each columniform diameter is 3 μm, is highly 200nm.
3, sample good for alligatoring is immersed acetone soln and carry out ultrasonic cleaning 10min, adopt electron beam evaporation plating mode, at the indium tin oxide transparent film 109 that the magnesium-doped P-GaP current extending 108 of alligatoring and contact point 110 surface deposition thickness are 250nm, indium tin oxide transparent film 109 transmitance ensures that, more than 95%, square resistance is within 10.
4, the sample of complete for evaporation tin indium oxide is immersed acetone soln and carry out ultrasonic cleaning 10min, spin coating negative photoresist, through overbaking, exposure, baking, produces electrode pattern after development, after sample being spin-dried for by high speed spinner, adopt electron beam evaporation plating mode evaporation first electrode 111, electrode material is Cr, Ti, Pt, Au, and thickness is respectively 30nm, 50nm, 100nm, 3000nm.
5, by grinder, chip is ground to 200 μm of thickness.
6, ground sample is immersed acetone soln and carry out ultrasonic cleaning 10min, adopt the mode of electron beam evaporation plating to make the second electrode 112 at the back side of substrate GaAs101, electrode material is AuGe, Au, and thickness is respectively 100nm, 20nm.
7, RTA annealing furnace is adopted to anneal to chip, annealing temperature 400 DEG C, annealing time 10s.Namely the making of device is completed.
Two, the product structure feature made:
As shown in Figure 1, a permanent substrate GaAs101 one side is disposed with N-GaAs transition zone 102, AlAs/AlGaAs reflector 103, N-AlGaInP lower limit layer 104, MQW multiple quantum well active layer 105, P-AlGaInP upper limiting layer 106, P-GaInP resilient coating 107, P-GaP current extending 108, transparency conducting layer 109, first electrode 111, the second electrode 112 is set at the another side of a permanent substrate GaAs101.
Due to the current expansion ability that Indium-tin Oxide Transparent Conductive Film is good, uniform current by tin indium oxide, then is injected into whole chip surface by contact point by electrode, thus reduces electric current the gathering of side under the electrodes, decrease the invalid injection of electric current, improve luminous efficiency.
Claims (10)
1. a high brightness LED, N-GaAs transition zone, AlAs/AlGaAs reflector, N-AlGaInP lower limit layer, MQW multiple quantum well active layer, P-AlGaInP upper limiting layer, P-GaInP resilient coating, magnesium-doped P-GaP current extending, indium tin oxide transparent film and the first electrode is set gradually in the one side of permanent substrate GaAs, second electrode is set at the another side of permanent substrate GaAs, it is characterized in that arranging patterned contact point between described magnesium-doped P-GaP current extending and indium tin oxide transparent film.
2. high brightness LED according to claim 1, is characterized in that the thickness of described magnesium-doped P-GaP current extending is 2000nm ~ 4000nm.
3. high brightness LED according to claim 1 or 2, is characterized in that in described magnesium-doped P-GaP current extending, the doping content close to the magnesium of resilient coating is 4 × 10
17cm
-3~ 8 × 10
17cm
-3, the doping content away from the magnesium of resilient coating is 8 × 10
17cm
-3~ 1 × 10
19cm
-3, the doping depth away from the magnesium of resilient coating is 300nm ~ 500nm.
4. high brightness LED according to claim 1, is characterized in that the thickness of described indium tin oxide transparent film is 250 ~ 300nm.
5. high brightness LED according to claim 1, it is characterized in that described contact point is cylindrical, diameter is 3 ~ 5 μm, is highly 200 ~ 400nm.
6. the manufacture method of high brightness LED as claimed in claim 1, comprises the following steps:
1) epitaxial wafer is made: at one side epitaxial growth N-GaAs resilient coating, AlAs/AlGaAs reflector, N-AlGaInP lower limit layer, MQW multiple quantum well active layer, P-AlGaInP upper limiting layer, P-GaInP resilient coating, the P-GaP current extending successively of permanent substrate GaAs;
2) graphical contact point is made on epitaxial wafer surface;
3) at laminated whole the deposit transparent conductive film of the P-GaP current expansion with graphical contact point;
4) on transparent conductive film, the first electrode is made;
5) the second electrode is made at the another side of permanent substrate GaAs;
6) RTA is adopted to carry out annealing in process;
It is characterized in that:
When making the P-GaP current extending of epitaxial wafer, take magnesium as doped chemical;
While the graphical contact point of making, the P-GaP current extending surface beyond butt contact adopts wet method to carry out roughening treatment, and the alligatoring degree of depth is 200 ~ 400nm;
The material of deposit transparent conductive film is indium tin oxide.
7. the manufacture method of high brightness LED according to claim 5, is characterized in that: in described magnesium-doped P-GaP current extending, the doping content close to the magnesium of resilient coating is 4 × 10
17cm
-3~ 8 × 10
17cm
-3, the doping content away from the magnesium of resilient coating is 8 × 10
17cm
-3~ 1 × 10
19cm
-3, the doping depth away from the magnesium of resilient coating is 300nm ~ 500nm.
8. the manufacture method of high brightness LED according to claim 5, is characterized in that: the thickness of described indium tin oxide transparent film is 250 ~ 300nm.
9. the manufacture method of high brightness LED according to claim 5, it is characterized in that: described contact point is cylindrical, diameter is 3 ~ 5 μm, is highly 200 ~ 400nm.
10. the manufacture method of high brightness LED according to claim 5, is characterized in that: described RTA annealing temperature is 350 ~ 450 DEG C, annealing time 5 ~ 20s.
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|---|---|---|---|
| CN201510061354.1A CN104576863B (en) | 2015-02-06 | 2015-02-06 | A kind of high brightness LED and its manufacture method |
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| CN105428485A (en) * | 2015-12-21 | 2016-03-23 | 扬州乾照光电有限公司 | GaP surface roughened AlGaInP-based LED and manufacturing method therefor |
| CN105932131A (en) * | 2016-06-22 | 2016-09-07 | 扬州乾照光电有限公司 | Vertical structure AlGaInP-based light-emitting diode and manufacturing method thereof |
| CN106098917A (en) * | 2016-08-24 | 2016-11-09 | 扬州乾照光电有限公司 | A kind of patterning high brightness AlGaInP light emitting diode and manufacture method thereof |
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| CN110197790A (en) * | 2019-06-17 | 2019-09-03 | 苏州长瑞光电有限公司 | A kind of method for annealing of Group III-V semiconductor wafer |
| CN111180561A (en) * | 2019-12-27 | 2020-05-19 | 华灿光电(苏州）有限公司 | AlGaInP-based light emitting diode chip and manufacturing method thereof |
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| CN101685841A (en) * | 2008-09-26 | 2010-03-31 | 台达电子工业股份有限公司 | Light emitting diode chip |
| CN104300065B (en) * | 2014-10-14 | 2017-01-25 | 扬州乾照光电有限公司 | Light-emitting diode with novel extension electrode structure and manufacturing method thereof |
| CN104319332A (en) * | 2014-10-29 | 2015-01-28 | 华灿光电(苏州）有限公司 | Light-emitting diode and manufacturing method thereof |
| CN204441319U (en) * | 2015-02-06 | 2015-07-01 | 扬州乾照光电有限公司 | A kind of high brightness LED |
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2015
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| CN105428485A (en) * | 2015-12-21 | 2016-03-23 | 扬州乾照光电有限公司 | GaP surface roughened AlGaInP-based LED and manufacturing method therefor |
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| CN105932131A (en) * | 2016-06-22 | 2016-09-07 | 扬州乾照光电有限公司 | Vertical structure AlGaInP-based light-emitting diode and manufacturing method thereof |
| CN106098917A (en) * | 2016-08-24 | 2016-11-09 | 扬州乾照光电有限公司 | A kind of patterning high brightness AlGaInP light emitting diode and manufacture method thereof |
| CN108269895A (en) * | 2017-12-22 | 2018-07-10 | 南昌凯迅光电有限公司 | A kind of ito thin film LED chip and its manufacturing method |
| CN108321264A (en) * | 2017-12-22 | 2018-07-24 | 南昌凯迅光电有限公司 | High brightness ito thin film LED chip and its manufacturing method |
| CN109285924A (en) * | 2018-12-10 | 2019-01-29 | 合肥彩虹蓝光科技有限公司 | A kind of manufacturing method of semiconductor chip |
| CN110197790A (en) * | 2019-06-17 | 2019-09-03 | 苏州长瑞光电有限公司 | A kind of method for annealing of Group III-V semiconductor wafer |
| CN111180561A (en) * | 2019-12-27 | 2020-05-19 | 华灿光电(苏州）有限公司 | AlGaInP-based light emitting diode chip and manufacturing method thereof |
| CN111180561B (en) * | 2019-12-27 | 2021-06-29 | 华灿光电(苏州）有限公司 | AlGaInP-based light emitting diode chip and manufacturing method thereof |
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