CN203883034U - Bonding wire free type LED chip - Google Patents
Bonding wire free type LED chip Download PDFInfo
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- CN203883034U CN203883034U CN201420155673.XU CN201420155673U CN203883034U CN 203883034 U CN203883034 U CN 203883034U CN 201420155673 U CN201420155673 U CN 201420155673U CN 203883034 U CN203883034 U CN 203883034U
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Abstract
The utility model discloses a bonding wire free type LED chip which comprises an epitaxial chip, an isolating layer and a solder layer. The chip is characterized in that the epitaxial chip comprises a reflection layer, a substrate, a buffer layer, an N-type layer, a light-emitting layer, an electron blocking layer, a P-type layer and an ITO layer. Net-like fingers are formed on the ITO layer. The N-type layer is provided with an N-type electrode. The P-type layer is provided with a P-type electrode. The isolating layer covers the upper side and periphery of the epitaxial chip. The solder layer is arranged between the N-type electrode and a corresponding external circuit and between the P-type electrode and a corresponding external circuit. According to the utility model, the light source quality can be improved, no gold wire is needed, the fabrication cost can be reduced, and the LED reliability can be improved, and at the same time, the connection between the electrodes and the external circuits is realized through spot welding, so the LED yield can be improved.
Description
Technical field
The utility model relates to LED production technology, and especially one is exempted from wire welding type LED chip.
Background technology
Because LED is a kind of high efficiency light source that meets environmental protection and energy saving green illumination theory, compared with conventional light source, LED has that the life-span is long, reliability is high, volume is little, low in energy consumption, fast response time, be easy to modulation and the advantage such as integrated, so taking LED as main semiconductor lighting technology has obtained promotion and development energetically in worldwide, forming huge industry.At present, LED has become the focus that people pay close attention to, is widely used in fields such as information demonstration, image processing, and future will replace incandescent, fluorescent lamp, enters general lighting field.But LED still faces problems, as manufacture craft is relatively complicated, the problem such as spectral distribution is inhomogeneous, light extraction efficiency.Therefore how to improve the luminous efficiency of LED, reducing production costs is the major technique bottleneck that LED faces.
Summary of the invention
For the deficiencies in the prior art, the utility model provides one to exempt from wire welding type LED chip, so that light source quality better and can reduce the cost of raw material and difficulty of processing.
The technical solution of the utility model is: one is exempted from wire welding type LED chip, comprise extension chip, separator and solder layer, it is characterized in that: described extension chip comprises substrate, be formed at successively resilient coating, N-type layer, luminescent layer, electronic barrier layer, P type layer and the ITO layer of substrate top surface, be formed at the reflector of substrate lower surface, on ITO layer, be formed with netted finger; The N-type layer of extension chip is provided with N-type electrode, the P type layer of extension chip is provided with P type electrode, N-type electrode and P type electrode all with extension chip electrical couplings, P type electrode is connected with netted finger metal, separator is covered in upside and the surrounding of extension chip, and solder layer is arranged between N-type electrode and corresponding outer circuits and P type electrode and corresponding outer circuits.
Preferably, described substrate is Sapphire Substrate or molybdenum substrate, and reflector is silver-plated metal level, and N-type electrode and P type electrode all adopt zinc oxide electrode.
Described separator is the separator that silicon dioxide, silicon nitride or polyimides are made, and thickness is 0.5-30 μ m.
Described outer chip is divided into small-power chip, middle power chip, high-power chip and high pressure chip by design size size; Consistent or the difference in height of N-type electrode height and P type electrode height be LED maximum ga(u)ge 5% within.
The material of described solder layer and netted finger can adopt the alloy of one or more compositions in Ag, Cu, Al, Ni, In, Sn, Ti, Pt, Cr, Au and Wu.
The beneficial effects of the utility model are: a kind of packed LED chip of exempting from bonding wire is provided, can have increased the recovery rate of light on the one hand, and promote light source quality by the design of extension chip; Reduce cost of manufacture without gold thread on the one hand, and covered and can promote light efficiency without gold thread; Adopt on the other hand spot-welding technology just can realize electrode and be connected with outer circuits, simplify processing step and improved the yield of LED.
Brief description of the drawings
Fig. 1 is the generalized section of the each embodiment agent structure of the utility model.
In figure, 1-substrate; 2-resilient coating; 3-N type layer; 4-luminescent layer; 5-electronic barrier layer; 6-P type layer; 7-ITO layer; 8-separator; 9-P type electrode; 10-reflector; 11-N type electrode; 12-solder layer.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described further:
As shown in Figure 1, what the utility model provided exempts from wire welding type LED chip, comprise extension chip, separator 8 and solder layer 12, wherein extension chip comprises Sapphire Substrate 1, be formed at successively the resilient coating 2 of substrate 1 upper surface, N-type layer 3, luminescent layer 4, electronic barrier layer 5, P type layer 6 and ITO layer 7, be formed at the reflector 10 of substrate 1 lower surface, in the present embodiment, reflector 10 adopts silver-plated metal level, on ITO layer 7, be formed with netted finger, the N-type layer 3 of extension chip is provided with N-type electrode 11, the P type layer 6 of extension chip is provided with P type electrode 9, in the present embodiment N-type electrode 11 and P type electrode 9 all adopt zinc oxide electrode and with extension chip electrical couplings, P type electrode 9 is connected with netted finger metal, separator 8 is covered in upside and the surrounding of extension chip, in the present embodiment, separator 8 is polyimides separator 8, solder layer 12 is arranged at N-type electrode 11 and corresponding outer circuits, and between P type electrode 9 and corresponding outer circuits.
Manufacturing process in the present embodiment is: resilient coating 2, N-type layer 3, luminescent layer 4, electronic barrier layer 5, P type layer 6 all adopt MOCVD technology to grow, N-type electrode 11 and P type electrode 9 adopt ICP, mask or photoetching technique to carry out etching, ITO layer 7 and netted finger adopt reaction and plasma deposition technique to make, separator 8 use PECVD technology make, 12 of solder layers can adopt the mode of electric welding, by scolder directly on electrode, excess solder flows down along extension chip sidewall, and the scolder flowing down is directly connected with outer circuits.
Claims (2)
1. exempt from wire welding type LED chip for one kind, comprise extension chip, separator and solder layer, it is characterized in that: described extension chip comprises molybdenum substrate, be formed at successively resilient coating, N-type layer, luminescent layer, electronic barrier layer, P type layer and the ITO layer of molybdenum substrate top surface, be formed at the silver-plated metallic reflector of molybdenum substrate lower surface, on ITO layer, be formed with netted finger; The N-type layer of extension chip is provided with N-type electrode, the P type layer of extension chip is provided with P type electrode, N-type electrode and P type electrode all with extension chip electrical couplings, N-type electrode and P type electrode all adopt zinc oxide electrode, P type electrode is connected with netted finger metal, separator is covered in upside and the surrounding of extension chip, and solder layer is arranged between N-type electrode and corresponding outer circuits and P type electrode and corresponding outer circuits.
2. the wire welding type LED chip of exempting from according to claim 1, is characterized in that: described separator is the separator that silicon dioxide, silicon nitride or polyimides are made, thickness is 0.5-30 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420155673.XU CN203883034U (en) | 2014-04-02 | 2014-04-02 | Bonding wire free type LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420155673.XU CN203883034U (en) | 2014-04-02 | 2014-04-02 | Bonding wire free type LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203883034U true CN203883034U (en) | 2014-10-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420155673.XU Expired - Fee Related CN203883034U (en) | 2014-04-02 | 2014-04-02 | Bonding wire free type LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203883034U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109037268A (en) * | 2018-06-06 | 2018-12-18 | 友达光电股份有限公司 | Micro light-emitting diode display, micro light-emitting diode element and manufacturing method thereof |
| CN109545921A (en) * | 2018-12-13 | 2019-03-29 | 广东工业大学 | A kind of LED chip, LED epitaxial wafer and preparation method thereof |
-
2014
- 2014-04-02 CN CN201420155673.XU patent/CN203883034U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109037268A (en) * | 2018-06-06 | 2018-12-18 | 友达光电股份有限公司 | Micro light-emitting diode display, micro light-emitting diode element and manufacturing method thereof |
| TWI661574B (en) * | 2018-06-06 | 2019-06-01 | 友達光電股份有限公司 | Micro light emitting diode display micro light emitting diode and manufacturing methods thereof |
| CN109037268B (en) * | 2018-06-06 | 2020-10-23 | 友达光电股份有限公司 | Micro light-emitting diode display, micro light-emitting diode element and manufacturing method thereof |
| CN109545921A (en) * | 2018-12-13 | 2019-03-29 | 广东工业大学 | A kind of LED chip, LED epitaxial wafer and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141015 Termination date: 20170402 |
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| CF01 | Termination of patent right due to non-payment of annual fee |