CN203787450U - Flip-chip light emitting diode and flip-chip package structure thereof - Google Patents
Flip-chip light emitting diode and flip-chip package structure thereof Download PDFInfo
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- CN203787450U CN203787450U CN201420137966.5U CN201420137966U CN203787450U CN 203787450 U CN203787450 U CN 203787450U CN 201420137966 U CN201420137966 U CN 201420137966U CN 203787450 U CN203787450 U CN 203787450U
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- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 39
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 9
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 9
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 9
- 239000010980 sapphire Substances 0.000 claims abstract description 9
- 239000013078 crystal Substances 0.000 claims description 103
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 239000002245 particle Substances 0.000 claims description 24
- 239000004411 aluminium Substances 0.000 claims description 23
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- 238000012407 engineering method Methods 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 238000004064 recycling Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 41
- 238000004519 manufacturing process Methods 0.000 abstract description 28
- 238000005297 material degradation process Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 188
- 229920002120 photoresistant polymer Polymers 0.000 description 21
- 238000005538 encapsulation Methods 0.000 description 13
- 238000012545 processing Methods 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000000926 separation method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000006071 cream Substances 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 238000003698 laser cutting Methods 0.000 description 3
- 238000012216 screening Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 150000001398 aluminium Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Abstract
The utility model provides a flip-chip light emitting diode and a flip-chip package structure thereof. The light emitting diode comprises, from inside to outside, a sapphire substrate, an N-type ohmic contact layer, a luminous layer, a P-type ohmic contact layer, a transparent conductive metal oxide layer, at least two exposed electrode parts with different electrodes, and at least one multi-layer reflective layer covered at the outermost layer. The multi-layer reflective layer includes a non-conductive reflective layer or the combination of the non-conductive reflective layer and a conductive reflective layer. The multi-layer reflective layer is formed on the outer surface, beyond the exposed electrode parts, of the light emitting diode element by making use of a vacuum coating method of PVD and through one-time production with the same photo-mask so as to avoid the need for a plurality of different photo-masks and a plurality of times of PVD production as well as light attenuation and electrical problems caused by easily-occurring material degradation under high temperature in the background art and to achieve process simplification and cost efficiency.
Description
Technical field
The utility model relate to a kind of crystal-coated light-emitting diodes with and crystal covering type encapsulating structure, espespecially crystal-coated light-emitting diodes comprises the outermost layer that at least one multiple field reflector layer covers this LED crystal particle, and this multiple field reflector layer be utilize PVD vacuum coating engineering method and with same light shield and the mode of producing once to be formed on the outer surface of this LED crystal particle except this exposed electrode portion.
Background technology
Relevant crystal-coated light-emitting diodes (flip-chip LED) as technical fields such as the manufacture method of the reflector layer of gallium nitride based LED structure or light-emitting diode or crystal covering type encapsulating structures in, there is at present multiple prior art, as No. I423482nd: TaiWan, China patent announcement (case number 098116606, publication number 201042782), No. 573330, novel No. M350824; US Patent No. 8,211,722, US6,914,268, US8,049,230, US7,985,979, US7,939,832, US7,713,353, US7,642,121, US7,462,861, US7,393,411, US7,335,519, US7,294,866, US7,087,526, US5,557,115, US6,514,782, US6,497,944, US6,791,119; And U.S. Patent Publication No. US2011/0014734, US2002/0163302, US2004/0113156 etc.Above-mentioned these prior aries are mostly for a light-emitting diode (LED) grainiess or its encapsulation (package) structure, the problem and the disappearance that at aspects such as luminous efficiency, heat sinking function, useful life, manufacturing cost, packaging qualification rate, processing procedure simplification, light decays, produce, and propose to solve the different technological means of those problems and disappearance.
With TaiWan, China, announce No. I423482 (case number 098116606, publication number 201042782), US Patent No. 8,211,722(US2011/0294242) and US2011/0014734(case number 12/505,991) be example explanation, US2011/0014734(abandons) be that TaiWan, China is announced the U.S. patent application case of No. I423482, US8,211,722nd, US2011/0014734(abandons) partial continuous case (continuation-in-part).TaiWan, China is announced I423482 and US8, 211, 722 is all the manufacture method (FLIP-CHIP GAN FABRICATION METHOD) that discloses a kind of crystal covering type gallium nitride light-emitting diode, wherein rely on the primary structure of the made crystal covering type gallium nitride light-emitting diode crystal grain of its manufacture method disclosing to comprise: a sapphire substrate, one N-type (negative pole) gallium nitride ohmic contact layer, one luminescent layer, one P type (positive pole) gallium nitride ohmic contact layer, one transparent conductive metal oxide skin(coating) (as tin indium oxide), two different poles are (as just, negative pole) exposed electrode portion (or liner) and covers the outermost multiple field reflector layer of this LED crystal particle, wherein this multiple field reflector layer is generally to utilize PVD vacuum coating engineering method to form, yet, wherein this multiple field (as three layers) reflector layer is to utilize a plurality of (as three) different light shields first to set up the formed patterns (pattern) of this multiple field reflector layer as determined the position of setting up of photoresist layer, and recycle PVD production method that processing procedure is separated into repeatedly (as three times) sequentially to form a multiple field reflector layer on the outer surface except this exposed electrode portion in this LED crystal particle as by silicon monoxide (SiO2) film, the multiple field reflector layer that one aluminium film and silicon monoxide (SiO2) film form, namely, this silica (SiO2) film, this aluminium film and this silica (SiO2) film be utilize three PVD production methods three vacuum coating engineering methods complete, wherein PVD production method all must be used a light shield and utilize and once vacuumizes and the making flow process of vacuum breaker just completes vacuum coating engineering method one time each time, so utilize a plurality of (as three) different light shields and repeatedly (three times) PVD production method make a multiple field reflector layer, relatively can increase Production Time and cost, be unfavorable for mass production and inter-industry competition.
As from the foregoing, the demand when structure of above-mentioned those background technologies and processing procedure are difficult to realistic use in fact, therefore in association areas such as the manufacture method of the reflector layer of crystal covering type gallium nitride light-emitting diode structure, light-emitting diode and crystal covering type encapsulating structures thereof, still there is further improved desirability.
Utility model content
The utility model main purpose is to be to provide a kind of crystal-coated light-emitting diodes, reach that processing procedure is simplified and cost benefit, and avoid prior art utilize a plurality of different light shields and repeatedly PVD production method begin to complete a problem for multiple field reflector layer and the object of shortcoming.
For achieving the above object, the technical solution adopted in the utility model comprises:
A crystal-coated light-emitting diodes, is characterized in that, comprises:
One sapphire substrate;
One N-type ohmic contact layer, its formation and being arranged on this device substrate;
One P type ohmic contact layer, its formation and being arranged on this N-type ohmic contact layer, wherein the interface of this P type ohmic contact layer and this N-type ohmic contact layer forms a luminescent layer;
One transparent conductive metal oxide skin(coating), its formation and being arranged on this P type ohmic contact layer;
The exposed electrode portion of two different poles, comprises a negative electrode portion and an anode electrode portion; And
One covers outermost multiple field reflector layer;
This multiple field reflector layer be utilize the vacuum coating engineering method of PVD and with same light shield and the mode of producing once sequentially to form on the outer surface except this exposed electrode portion at this light-emitting diode.
Wherein: this multiple field reflector layer is consisted of a non-conductive silicon oxide film, a conductivity aluminium film and another non-conductive silicon oxide film, and wherein this conductivity aluminium film is formed between two non-conductive silicon oxide films.
Wherein: on this multiple field reflector layer, be further provided with an electrode watershed area, so that this multiple field reflector layer relies on this electrode watershed area, be separated into and within two minutes, open and form half reflector layer of being electrically insulated to be electrically connected at respectively the exposed electrode portion of two different poles.
Wherein: this multiple field reflector layer is consisted of dielectric decentralized Prague reflective membrane.
Wherein: on this multiple field reflector layer, be further provided with a conductivity reflector layer, wherein this conductivity reflector layer is the vacuum coating engineering method of recycling PVD and is formed on the outer surface of this multiple field reflector layer with same light shield and the mode of producing once.
Wherein: the metallic reflective layer that this conductivity reflector layer consists of aluminium film or silverskin.
For achieving the above object, the technical solution adopted in the utility model comprises:
A crystal covering type encapsulating structure for crystal-coated light-emitting diodes, it comprises a crystal-coated light-emitting diodes crystal grain and a heat-conducting substrate;
The exposed electrode portion and one that wherein this crystal-coated light-emitting diodes crystal grain comprises a sapphire substrate, a N-type ohmic contact layer, a luminescent layer, P type ohmic contact layer, a transparent conductive metal oxide skin(coating), two different poles covers outermost multiple field reflector layer; It is characterized in that:
Wherein this multiple field reflector layer be utilize the vacuum coating engineering method of PVD and with same light shield and the mode of producing once to form this multiple field reflector on the outer surface except this exposed electrode portion in this LED crystal particle;
Wherein this LED crystal particle relies on crystal grain adhesion and reflow operation to cover and brilliantly on this heat-conducting substrate, have on the contact of conductive rubber to aim at contraposition.
Wherein: this multiple field reflector layer is consisted of a non-conductive silicon oxide film, a conductivity aluminium film and another non-conductive silicon oxide film, and wherein this conductivity aluminium film is formed between two non-conductive silicon oxide films.
Wherein: this multiple field reflector layer is consisted of dielectric decentralized Prague reflective membrane.
Wherein: on this multiple field reflector layer, be further provided with a conductivity reflector layer, wherein this conductivity reflector layer be the vacuum coating engineering method of recycling PVD and with same light shield and the mode of producing once to form this conductivity reflector layer on the outer surface at this multiple field reflector layer.
Wherein: the metallic reflective layer that this conductivity reflector layer consists of aluminium film or silverskin.
Compared with prior art, the beneficial effect the utlity model has is: can avoid prior art must utilize a plurality of different light shields and PVD production method and easily to produce material at high temperature deteriorated and cause light decay and the problem such as electrical repeatedly, reach the benefit that processing procedure is simplified and reduced costs.
Accompanying drawing explanation
Figure 1A～Fig. 1 D is the schematic flow sheet of manufacture method and the structural representation of this light-emitting diode of the utility model crystal-coated light-emitting diodes.
Fig. 2 A～Fig. 2 D is the encapsulation schematic flow sheet of the crystal grain of the utility model crystal-coated light-emitting diodes shown in Fig. 1 D and the encapsulating structure schematic diagram of this light-emitting diode;
Fig. 3 A～Fig. 3 C is another encapsulation schematic flow sheet of the crystal grain of the utility model crystal-coated light-emitting diodes shown in Fig. 1 D and the encapsulating structure schematic diagram of this light-emitting diode;
Fig. 4 A～Fig. 4 D is the schematic flow sheet of manufacture method and the structural representation of this light-emitting diode of another embodiment of the utility model crystal-coated light-emitting diodes;
Fig. 5 A～Fig. 5 D is another encapsulation schematic flow sheet of the crystal grain of the utility model crystal-coated light-emitting diodes shown in Fig. 4 D and the encapsulating structure schematic diagram of this light-emitting diode.
Description of reference numerals: 1-crystal-coated light-emitting diodes; 1a-LED crystal particle; 2-wafer; 3-LED crystal particle; 4-(light-emitting diode) encapsulation; 4a-(light-emitting diode) encapsulation; 4b-(light-emitting diode) encapsulation; 10-sapphire substrate; 20-N type ohmic contact layer; 30-luminescent layer; 40-P type ohmic contact layer; 50-transparent conductive metal oxide skin(coating); 60-negative electrode portion; 70-anode electrode portion; 80-multiple field reflector layer; 81-electrode watershed area; 82-half reflector layer; 83-half reflector layer; 90-photoresist layer; 91-photoresist layer; 92-photoresist layer; 100-tin pad; 110-heat-conducting substrate; 111-contact; 120-conductive rubber; 130-conductivity reflector layer; 131-electrode watershed area.
Embodiment
For making the utility model more clearly full and accurate, hereby enumerate preferred embodiment and coordinate following diagram, structure of the present utility model and technical characterictic thereof are described in detail as rear:
Please refer to shown in Fig. 1 D, it is the structural representation of the utility model crystal-coated light-emitting diodes.Crystal-coated light-emitting diodes 1 of the present utility model, as crystal covering type gallium nitride light-emitting diode but do not limit, comprises: a sapphire substrate 10; One N-type ohmic contact layer 20, its formation and being arranged on this device substrate; One luminescent layer 30; One P type ohmic contact layer 40 its formation and being arranged on this N-type ohmic contact layer, wherein the interface of this P type ohmic contact layer and this N-type ohmic contact layer forms this luminescent layer 30; One transparent conductive metal oxide skin(coating) 50; The exposed electrode portion of two different poles is as negative electrode portion 60 and anode electrode portion 70; And one cover outermost multiple field reflector layer 80, the combination that wherein this multiple field reflector layer comprises non-conductive reflector layer or non-conductive reflector layer and conductivity reflector layer; Wherein this multiple field reflector layer 80 is to utilize PVD(Physical Vapor Deposition, physical vapour deposition (PVD)) vacuum coating engineering method and with same light shield and the mode of producing once to be formed on the outer surface of this light-emitting diode except this exposed electrode portion.
Above-mentioned this same light shield and the mode of producing once refer to when carrying out PVD vacuum coating engineering method, first with same light shield, set up the formed patterns (pattern) of this multiple field reflector layer, so that the surface of the exposed electrode portion 60,70 of this two different poles is respectively provided with a photoresist layer 90 as shown in Fig. 1 D, and recycling once vacuumizes and the making flow process of vacuum breaker sequentially completes the vacuum coating processing procedure of each layer in this multiple field reflector layer 80, so reaches processing procedure and simplifies and cost benefit.
In fact, with state of the art, utilize a light shield with set up the technology or utilize of the formed patterns (pattern) of one deck reflector layer once vacuumize and the making flow process of vacuum breaker to complete the vacuum coating technology of one deck reflector layer, all can be considered in the art prior art, yet, the utility model is to utilize same light shield to set up the formed patterns (pattern) of a multiple field reflector layer, and recycling once vacuumizes and the making flow process of vacuum breaker to complete the vacuum coating processing procedure of each layer in a multiple field reflector layer, can be considered in the art innovation, again due to the utility model can avoid background technology utilize a plurality of different light shields and repeatedly PVD production method begin to complete problem and the shortcoming of a multiple field reflector layer, at least can reach processing procedure and simplify and cost benefit, therefore should there is progressive.
In the utility model one embodiment as shown in Fig. 1 D, this multiple field reflector layer 80 is multiple field reflection layer structures that consist of non-conductive silica (SiO2) film, a conductivity aluminium film and non-conductive silica (SiO2) film, and namely this conductivity aluminium film is formed in and is positioned at this non-conductive silica (SiO2) film of inner side and is positioned between this non-conductive silica (SiO2) film in outside; Wherein on this multiple field reflector layer 80 further be provided with an electrode watershed area 81 as shown in Fig. 1 D, make this multiple field reflector layer 80 be separated into and within two minutes, to open and form half reflector layer 82,83 of being electrically insulated to be electrically connected at respectively the exposed electrode portion 60,70 of two different poles by means of this electrode watershed area 81; Namely, this electrode watershed area 81 is for avoiding this multiple field reflector layer 80 to form conducting state because of this conductivity aluminium film wherein.
In another embodiment of the utility model (can with reference to shown in figure 1D), this multiple field reflector layer 80 also can be by dielectric decentralized Prague reflective membrane DBR(distributed Bragg reflector) to form a multiple field reflection layer structure, this DBR(decentralized Prague reflective membrane wherein) this is as a multilayer architecture, it is consisted of the silica of multilayer (SiO2) film and titanium oxide (Ti3O5) film (as totally 16 layers), and relies on DBR multiple field reflector layer 80 can increase the luminosity of LED crystal grain.Because 80 of this DBR multiple field reflector layers are as a dielectric multiple field reflector layer, therefore when this multiple field reflector layer 80 is by DBR(distributed Bragg reflector) while forming, this DBR multiple field reflector layer 80 can form an integral type reflection layer structure, namely, on this DBR multiple field reflector layer 80, can not establish any electrode watershed area 81(can be with reference to), because this DBR multiple field reflector layer 80 is a dielectric multiple field reflector layer, therefore needn't set up any electrode watershed area (81) to be separated into half reflector layer (82 of opening and be electrically insulated for two minutes, 83).
Above-mentioned this same light shield and the mode of producing once refer to when carrying out PVD vacuum coating engineering method, to set up the formed patterns (pattern) of this multiple field reflector layer 80 as set up photoresist layer 90 and/or photoresist layer 91 with same light shield, and recycling once vacuumizes and the making flow process of vacuum breaker sequentially completes the vacuum coating processing procedure of each layer in this multiple field reflector layer 80, wherein in this multiple field reflector layer 80, the vacuum coating of each layer refer to by non-conductive silica (SiO2) film, the multiple field reflection layer structure that one conductivity aluminium film and non-conductive silica (SiO2) film form, or refer to by a DBR(this as a dielectric multiple field reflector layer) the multiple field reflection layer structure that forms, the combination that namely this multiple field reflector layer comprises non-conductive reflector layer (as each layer of DBR non-conductive film or silicon oxide film) or non-conductive reflector layer (as silicon oxide film) and conductivity reflector layer (as aluminium film).
Refer again to shown in Figure 1A～Fig. 1 D, it is the schematic flow sheet of the manufacture method of the utility model crystal-coated light-emitting diodes.It is as follows that the manufacture method of the utility model crystal-coated light-emitting diodes comprises step:
Step 1: as shown in Figure 1A, provide one to have a plurality of light-emitting diodes (LED) crystal grain 1a(be light-emitting diode as gallium nitride but do not limit) wafer 2, wherein each LED crystal particle 1a forms and has: the exposed electrode portion of a sapphire substrate 10, a N-type ohmic contact layer 20, a luminescent layer 30, a P type ohmic contact layer 40, a transparent conductive metal oxide skin(coating) 50 and two different poles is as negative electrode portion 60 and anode electrode portion 70.
Step 2: as shown in Figure 1B, utilize same light shield to set up the formed patterns (pattern) of a multiple field reflector layer (80), so that the surface of the exposed electrode portion 60,70 of this two different poles is respectively provided with a photoresist layer 90 or photoresist layer 91.
Step 3: as shown in Figure 1 C, utilize PVD(Physical Vapor Deposition, physical vapour deposition (PVD)) vacuum coating engineering method and in the mode of producing once to form a multiple field reflector layer 80 on the outer surface at each LED crystal particle 1a, wherein this mode of producing once refers to when carrying out PVD vacuum coating engineering method it is to utilize once to vacuumize and the making flow process of vacuum breaker completes the vacuum coating processing procedure of each layer in this multiple field reflector layer 80.
Step 4: as shown in Fig. 1 D, remove again photoresist layer 90 or photoresist layer 91, as each exposed electrode portion, i.e. negative electrode portion 60 and anode electrode portion 70, surface on set photoresist layer 90, to have manufactured a plurality of LED crystal particle 1 with a multiple field reflector layer 80.
In above-mentioned steps 2 as shown in Figure 1B, when formed multiple field reflector layer 80 is by non-conductive silica (SiO2) film, when one conductivity aluminium film and non-conductive silica (SiO2) film form, when utilizing same light shield to set up the formed patterns (pattern) of a multiple field reflector layer (80), except making the exposed electrode portion 60 of this two different poles, respectively establish outside a photoresist layer 90 on 70 surface, also must in the formed patterns (pattern) of this multiple field reflector layer (80), the pre-determined bit of electrode watershed area (81) install a photoresist layer 91 as Figure 1B in addition, shown in Fig. 1 C, and then in step 4, remove photoresist layer 90 set on the surface of each portion of exposed electrode portion 60,70 and also can remove photoresist layer 91 set on the precalculated position of this electrode watershed area (81) simultaneously, to form an electrode watershed area 81 on this multiple field reflector layer 80 as shown in Fig. 1 D, so that this multiple field reflector layer 80 can rely on this electrode watershed area 81, be separated into and within two minutes, open and form half reflector layer 82,83 of being electrically insulated to be electrically connected at respectively the exposed electrode portion 60,70 of two different poles.
In addition, in above-mentioned steps 2 as shown in Figure 1B, when formed multiple field reflector layer 80 by a DBR(this as a dielectric multiple field reflector layer) while forming,, when utilizing same light shield to set up the formed patterns (pattern) of a multiple field reflector layer (80), must in the formed patterns (pattern) of this multiple field reflector layer (80), separately not establish this photoresist layer 91.
Please refer to shown in Fig. 4 D, it is the light-emitting diode of bright another embodiment of the utility model crystal-coated light-emitting diodes.Further recycling PVD(Physical Vapor Deposition on this multiple field reflector layer 80 of light-emitting diode 1 of the present utility model, physical vapour deposition (PVD)) vacuum coating engineering method is also utilized as the production method of this multiple field reflector layer 80 with same light shield and the mode of producing once to form a conductivity reflector layer 130 on the outer surface at this multiple field reflector layer 80 again; Wherein a kind of the formed single-layer metal reflector layer (130) of this conductivity reflector layer 130 in aluminium (Al) film, silver (Ag) film or the double-level-metal reflector layer (130) that formed by its combination; to promote area and the function of heat conduction or heat radiation, for the LED crystal particle or its encapsulation that are applicable to higher-wattage.
Please refer to shown in Fig. 4 A～Fig. 4 D, it is the schematic flow sheet of manufacture method and the structural representation of this light-emitting diode of another embodiment of the utility model crystal-coated light-emitting diodes.The present embodiment is a kind of crystal-coated light-emitting diodes manufacture method, and it is after above-mentioned step 4, further to comprise a step 5, and it further can be divided into the following step:
Step 5-1: 4 manufacturings complete a plurality of LED crystal particle 1 with a multiple field reflector layer 80 as shown in Figure 4 A for above-mentioned steps, utilize same light shield to set up the formed patterns (pattern) of another conductivity reflector layer (130), due to this conductivity reflector layer (130) tool conductivity of wanting to set up, therefore the exposed electrode portion 60 of this two different poles wherein, 70 surface can be established photoresist layer (90) again, need only be in the formed patterns (pattern) of this conductivity reflector layer (130) pre-position of an electrode watershed area (131), on the surface of this completed multiple field reflector layer 80, a photoresist layer 92 is established as shown in Figure 4 B in pre-position.
Step 5-2: as shown in Figure 4 C, utilize PVD(Physical Vapor Deposition, physical vapour deposition (PVD)) vacuum coating engineering method and in the mode of producing once to form again a conductivity reflector layer 130 on the surface at this completed multiple field reflector layer 80; Wherein this mode of producing once refers to when carrying out PVD vacuum coating engineering method it is to utilize once to vacuumize and the making flow process of vacuum breaker completes this conductivity reflector layer 130 or the vacuum coating processing procedure of each layer wherein; A kind of the formed single-layer metal reflector layer of this conductivity reflector layer 130 in aluminium film, silverskin wherein, or the double-level-metal reflector layer being formed by the combination of aluminium film, silverskin.
Step 5-3: as shown in Figure 4 D, remove again this photoresist layer 92 to form an electrode watershed area 131 in this conductivity reflector layer 130, on wafer 2, manufactured a plurality of LED crystal particle 3 with a multiple field reflector layer 80 and a conductivity reflector layer 130.
Please refer to shown in Fig. 2 A～Fig. 2 D, it is that the gallium nitride light-emitting diode of the utility model crystal covering type shown in Fig. 1 D crystal grain covers brilliant schematic flow sheet on a light-emitting diode heat-conducting substrate and the package structure for LED schematic diagram completing.For step 1～4 of the manufacture method of above-mentioned the utility model crystal covering type gallium nitride light-emitting diode, it further can comprise the following step after step 4:
Step 6: shown in figure 2A, in each exposed electrode portion, i.e. negative electrode portion 60 and anode electrode portion 70, surface on a tin pad (solder bumping) 100 is respectively set.
Step 7: shown in figure 2B, rely on grinding, laser cutting, splitting and crystal granules sorted (or the screening of crystal grain photoelectric characteristic) to form independently LED crystal particle 1 of separation.
Step 8: shown in figure 2C, Fig. 2 D, rely on crystal grain adhesion (die bonding) and reflow (reflow) operation by this separation independently LED crystal particle 1 aim at contraposition to cover on the corresponding contact 111 of having set of the brilliant light-emitting diode heat-conducting substrate 110 in a tool conductive rubber (as scaling powder flux or tin cream solder paste) 120, to complete the encapsulation 4 of this light-emitting diode 1.
In addition, please refer to shown in Fig. 3 A～Fig. 3 C, it is another encapsulation schematic flow sheet of the crystal grain of the utility model crystal-coated light-emitting diodes shown in Fig. 1 D and the encapsulating structure schematic diagram of this light-emitting diode.For step 1～4 of the manufacture method of aforementioned step the utility model crystal-coated light-emitting diodes, it further can comprise the following step after step 4:
Step 6a: shown in figure 3A, rely on grinding, laser cutting, splitting and crystal granules sorted (or the screening of crystal grain photoelectric characteristic), the wafer with a plurality of LED crystal particle 1 as shown in Fig. 1 D is resolved into independently LED crystal particle 1 of a plurality of separation.
Step 7a: shown in figure 3B, Fig. 3 C, rely on crystal grain adhesion (die bonding) and reflow (reflow) operation by this separation independently LED crystal particle 1 aim at contraposition to cover on the corresponding contact 111 of having set of the brilliant light-emitting diode heat-conducting substrate 110 in a tool conductive rubber (as tin cream solder paste) 120, to complete the encapsulation 4a of this light-emitting diode.
Flow process comparison shown in flow process shown in Fig. 3 A～Fig. 3 C and Fig. 2 A～Fig. 2 D, the step 6 that flow process shown in Fig. 3 A～Fig. 3 C has been saved flow process shown in Fig. 2 A～Fig. 2 D as shown in Figure 2 A.
In addition, please refer to shown in Fig. 5 A～Fig. 5 C, it is another encapsulation schematic flow sheet of the crystal grain of the utility model crystal-coated light-emitting diodes shown in Fig. 4 D and the encapsulating structure schematic diagram of this light-emitting diode.Step 5(for the manufacture method of aforementioned step the utility model crystal-coated light-emitting diodes comprises step 5-1～5-3), it further can comprise the following step after step 5:
Step 6b: shown in figure 5A, Fig. 5 B, rely on grinding, laser cutting, splitting and crystal granules sorted (or the screening of crystal grain photoelectric characteristic), the wafer with a plurality of LED crystal particle 32 is as shown in Figure 4 D resolved into independently LED crystal particle 3 of a plurality of separation.
Step 7b: shown in figure 5B, Fig. 5 C, rely on crystal grain adhesion (die bonding) and reflow (reflow) operation by this separation independently LED crystal particle 63 aim at contrapositions to cover on the corresponding contact 111 of having set of the brilliant light-emitting diode heat-conducting substrate 110 in a tool conductive rubber (as tin cream solder paste) 120, to complete the encapsulation 4b of this light-emitting diode.
In addition, when making this multiple field reflector layer 80 or this conductivity reflector layer 130, the utility model be all utilize same light shield with set up the formed patterns (pattern) of this reflector layer (as multiple field reflector layer 80 or conductivity reflector layer 130) and recycling once vacuumizes and the making flow process of vacuum breaker to complete the vacuum coating processing procedure of each layer in this reflector layer, wherein, make this multiple field reflector layer 80 light shield used light shield used from making this conductivity reflector layer 130 and can be identical light shield or different light shields, wherein take and use different light shields as good, if because use different light shields, can the different formed patterns (pattern) of setting tool on two different light shields, two photoresist layers 91 that utilize this light shield to set up, 92 also can be located at different positions, so that position and this electrode watershed area 131 position in this conductivity reflector layer 130 of this electrode watershed area 81 in this multiple field reflector layer 80 forms the state that misplaces up and down, because this electrode watershed area 81, 131 is mainly to make two electrodes can be electrically absolutely every edge, but area occupied is the smaller the better to avoid affecting the reflecting effect of this multiple field reflector layer 80 and this conductivity reflector layer 130, if therefore can present the state that misplaces up and down, be conducive to the reflecting effect after this multiple field reflector layer 80 and the overlapped combination of this conductivity reflector layer 130.
More than illustrate the utility model just illustrative; and nonrestrictive, those of ordinary skills understand, in the situation that do not depart from the spirit and scope that claim limits; can make many modifications, variation or equivalence, but within all falling into protection range of the present utility model.
Claims (11)
1. a crystal-coated light-emitting diodes, is characterized in that, comprises:
One sapphire substrate;
One N-type ohmic contact layer, its formation and being arranged on this device substrate;
One P type ohmic contact layer, its formation and being arranged on this N-type ohmic contact layer, wherein the interface of this P type ohmic contact layer and this N-type ohmic contact layer forms a luminescent layer;
One transparent conductive metal oxide skin(coating), its formation and being arranged on this P type ohmic contact layer;
The exposed electrode portion of two different poles, comprises a negative electrode portion and an anode electrode portion; And
One covers outermost multiple field reflector layer;
This multiple field reflector layer be utilize the vacuum coating engineering method of PVD and with same light shield and the mode of producing once sequentially to form on the outer surface except this exposed electrode portion at this light-emitting diode.
2. crystal-coated light-emitting diodes as claimed in claim 1, it is characterized in that: this multiple field reflector layer is consisted of a non-conductive silicon oxide film, a conductivity aluminium film and another non-conductive silicon oxide film, and wherein this conductivity aluminium film is formed between two non-conductive silicon oxide films.
3. crystal-coated light-emitting diodes as claimed in claim 2, it is characterized in that: on this multiple field reflector layer, be further provided with an electrode watershed area, so that this multiple field reflector layer relies on this electrode watershed area, be separated into and within two minutes, open and form half reflector layer of being electrically insulated to be electrically connected at respectively the exposed electrode portion of two different poles.
4. crystal-coated light-emitting diodes as claimed in claim 1, is characterized in that: this multiple field reflector layer is consisted of dielectric decentralized Prague reflective membrane.
5. crystal-coated light-emitting diodes as claimed in claim 1, it is characterized in that: on this multiple field reflector layer, be further provided with a conductivity reflector layer, wherein this conductivity reflector layer is the vacuum coating engineering method of recycling PVD and is formed on the outer surface of this multiple field reflector layer with same light shield and the mode of producing once.
6. crystal-coated light-emitting diodes as claimed in claim 5, is characterized in that: the metallic reflective layer that this conductivity reflector layer consists of aluminium film or silverskin.
7. a crystal covering type encapsulating structure for crystal-coated light-emitting diodes, is characterized in that: it comprises a crystal-coated light-emitting diodes crystal grain and a heat-conducting substrate;
The exposed electrode portion and one that this crystal-coated light-emitting diodes crystal grain comprises a sapphire substrate, a N-type ohmic contact layer, a luminescent layer, P type ohmic contact layer, a transparent conductive metal oxide skin(coating), two different poles covers outermost multiple field reflector layer;
This multiple field reflector layer be utilize the vacuum coating engineering method of PVD and with same light shield and the mode of producing once to form this multiple field reflector on the outer surface except this exposed electrode portion in this LED crystal particle;
This LED crystal particle relies on crystal grain adhesion and reflow operation to cover and brilliantly on this heat-conducting substrate, have on the contact of conductive rubber to aim at contraposition.
8. the crystal covering type encapsulating structure of crystal-coated light-emitting diodes as claimed in claim 7, it is characterized in that: this multiple field reflector layer is consisted of a non-conductive silicon oxide film, a conductivity aluminium film and another non-conductive silicon oxide film, and wherein this conductivity aluminium film is formed between two non-conductive silicon oxide films.
9. the crystal covering type encapsulating structure of crystal-coated light-emitting diodes as claimed in claim 7, is characterized in that: this multiple field reflector layer is consisted of dielectric decentralized Prague reflective membrane.
10. the crystal covering type encapsulating structure of crystal-coated light-emitting diodes as claimed in claim 7, it is characterized in that: on this multiple field reflector layer, be further provided with a conductivity reflector layer, wherein this conductivity reflector layer be the vacuum coating engineering method of recycling PVD and with same light shield and the mode of producing once to form this conductivity reflector layer on the outer surface at this multiple field reflector layer.
The crystal covering type encapsulating structure of 11. crystal-coated light-emitting diodes as claimed in claim 10, is characterized in that: the metallic reflective layer that this conductivity reflector layer consists of aluminium film or silverskin.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420137966.5U CN203787450U (en) | 2014-03-25 | 2014-03-25 | Flip-chip light emitting diode and flip-chip package structure thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420137966.5U CN203787450U (en) | 2014-03-25 | 2014-03-25 | Flip-chip light emitting diode and flip-chip package structure thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952991A (en) * | 2014-03-25 | 2015-09-30 | 茂邦电子有限公司 | Flip-chip light emitting diode, manufacture method thereof and flip-chip package structure of flip-chip light emitting diode |
| CN106549089A (en) * | 2015-09-21 | 2017-03-29 | 茂邦电子有限公司 | Crystal coated sealing structure of light-emitting diodes |
| WO2017049419A1 (en) * | 2015-09-21 | 2017-03-30 | 璩泽明 | Flip-chip light emitting diode package structure |
-
2014
- 2014-03-25 CN CN201420137966.5U patent/CN203787450U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104952991A (en) * | 2014-03-25 | 2015-09-30 | 茂邦电子有限公司 | Flip-chip light emitting diode, manufacture method thereof and flip-chip package structure of flip-chip light emitting diode |
| CN106549089A (en) * | 2015-09-21 | 2017-03-29 | 茂邦电子有限公司 | Crystal coated sealing structure of light-emitting diodes |
| WO2017049419A1 (en) * | 2015-09-21 | 2017-03-30 | 璩泽明 | Flip-chip light emitting diode package structure |
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Effective date of registration: 20210714 Address after: Room e502b, Taiwan Science and technology enterprise cultivation center, Xiamen Torch hi tech Zone (Xiang'an) Industrial Zone, Fujian Province Patentee after: XIAMEN MSSB TECHNOLOGY Co.,Ltd. Address before: 2nd floor, moto centre, apiawaia street, independent state of Samoa Patentee before: Aflash Technology, Co.,Ltd. |
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Granted publication date: 20140820 |