CN106549089A - Crystal coated sealing structure of light-emitting diodes - Google Patents
Crystal coated sealing structure of light-emitting diodes Download PDFInfo
- Publication number
- CN106549089A CN106549089A CN201510604110.3A CN201510604110A CN106549089A CN 106549089 A CN106549089 A CN 106549089A CN 201510604110 A CN201510604110 A CN 201510604110A CN 106549089 A CN106549089 A CN 106549089A
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- Prior art keywords
- led
- light
- layer
- emitting diodes
- sealing structure
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- 239000013078 crystal Substances 0.000 title claims abstract description 40
- 238000007789 sealing Methods 0.000 title claims abstract description 19
- 238000005538 encapsulation Methods 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 11
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 claims abstract description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000853 adhesive Substances 0.000 claims abstract description 8
- 230000001070 adhesive effect Effects 0.000 claims abstract description 8
- 239000004411 aluminium Substances 0.000 claims abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010949 copper Substances 0.000 claims abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 13
- 239000003292 glue Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000001795 light effect Effects 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 229910000510 noble metal Inorganic materials 0.000 abstract description 7
- 239000007921 spray Substances 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 9
- 239000010931 gold Substances 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention provides a kind of crystal coated sealing structure of light-emitting diodes, comprising：One LED grain, be provided with the surface of the LED grain two points of finger-like aluminium opened or copper electrode layer, a reflector layer its cover so that PVD or CVD is formed set on the electrode layer, and two nickel gold or copper gold projection be respectively formed on a precalculated position of two electrode layer and be exposed to outside the reflector layer and be provided as weld pad；One LED support plates, its surface is provided with least two points adhesive surface contact confessions opened and can rely on adhesive surface technique that the two nickel gold of the LED grain or copper gold projection correspondence are attached on two points of contacts opened, to form a reduction noble metal dosage to reduce the crystal covering type LED encapsulation structure of cost of manufacture；The present invention makes the LED grain be acted on by the mixed light of the encapsulation glue-line to form white light or other color of light, to save phosphor cost more in the LED grain external zones to spray or mould the encapsulation glue-line to form a tool uniform thickness and have phosphor.
Description
Technical field
The present invention relates to a kind of crystal-coated light-emitting diodes (LED) encapsulating structure, espespecially one kind is in the LED
Two points of aluminium opened are included on the surface of crystal grain or copper electrode layer, a reflector layer are formed and covered on the electrode layer
And two nickel gold or copper gold projection be respectively formed on a precalculated position of two electrode layer and be exposed to the reflector layer
It is outer being provided as weld pad (bond pad)；The two nickel gold or copper gold projection of the LED grain is viscous by surface again
Technique (SMT) correspondence and be linked to set two points of contacts opened on the surface of a LED support plates, to form one
Reduce noble metal dosage to reduce the crystal covering type LED encapsulation structure of cost of manufacture.
Background technology
In relevant crystal-coated light-emitting diodes (flip-chip LED) such as gallium nitride based LED structure or light-emitting diodes
In the technical fields such as the manufacture method or flip-chip type package structure of the reflector layer of pipe, current existing various backgrounds
Technology, such as：US8,211,722、US6,914,268、US8,049,230、US7,985,979、US7,939,832、
US7,713,353、US7,642,121、US7,462,861、US7,393,411、US7,335,519、
US7,294,866、US7,087,526、US5,557,115、US6,514,782、US6,497,944、
US6,791,119, US2011/0014734, US2002/0163302, US2004/0113156 etc..The above-mentioned back of the body
Scape technology is both for greatly a LED grain structure or its encapsulating structure, in luminous efficiency, heat sinking function, makes
With the problem produced by the aspects such as life-span, manufacturing cost, packaging qualification rate, processing procedure simplification, light decay with disappearance,
And propose solution.
Traditional LED grain is mainly based on bonding wire (wire bond), and is located on LED grain surface
Weld pad (bond pad) and wire or electrode layer (finger) material design mainly with golden (Au).
Follow-up developments go out crystal covering type (flip-chip) LED, and its weld pad material is mainly come with Sillim (SnAu) alloy
Design.As golden (Au) is noble metal, cause made by crystal covering type LED and/or its encapsulating structure all without
Method is effectively reduced cost of manufacture, is unfavorable for mass production and inter-industry competition.
Additionally, in the technical field of LED, existing part background technology is producing mixed light using fluorescent material
Effect, so that the LED of outgoing color of light can form white light or other colors to change by the mixed light effect
Light.Above-mentioned background technology be probably using an outgoing color of light LED such as blue and green light, ultraviolet light or
The LED of other colors, then can produce outer bluff piece that correspondence mixed light acts on (or title one for LED configuration one
Level eyeglass), such as mixed with colloid using certain color fluorescence powder of appropriate proportioning corresponding mixing can be produced to make this
The outer bluff piece of light action, makes the LED institutes outgoing color of light first pass through the outer bluff piece and change to form white light
Or the outwards outgoing again of other color of light.
But in practice, the outer bluff piece has that volume is larger so that phosphor cost is of a relatively high asks
Topic, and the outer bluff piece there is also it is in uneven thickness so that emergent light such as white light or other color of light phases after mixed light
To uneven problem, the manufacturing cost and service efficiency of LED encapsulation structure are being affected, is being unfavorable for LED
The mass production of encapsulation.
The content of the invention
Therefore, the background technology of this area is still difficult to the demand for meeting practice, and the present invention is for existing
The problem for having technology proposes effective solution.
For achieving the above object, the technical solution used in the present invention is：
A kind of crystal coated sealing structure of light-emitting diodes, it is characterised in that include：
One LED grain, is provided with the front of the LED grain：Two electrode layers for separating and being electrically insulated,
Wherein the electrode layer is constituted with aluminium or copper；
One reflector layer is formed on the electrode layer and is covered on the electrode layer, and in two points of electrodes opened
On layer, one precalculated position of each reservation is not covered by the reflector layer；And
Two separate projections, which is respectively formed on two points of electrode layers opened and is not covered by the reflector layer
Precalculated position on, wherein the projection with nickel gold or copper gold formed, the weld pad being provided as during adhesive surface technique
Use.
Described crystal coated sealing structure of light-emitting diodes, further comprising a LED support plates, the wherein LED
The surface of support plate is provided with two points of SMT contacts opened and be electrically insulated, and recycles adhesive surface technique to make this
Two projections being made up of nickel gold or copper gold in LED grain can be attached at the LED support plate with correspondence by conducting resinl
Surface on the set two points SMT contacts opened.
Described crystal coated sealing structure of light-emitting diodes, between the LED grain and the LED support plates further
Glue material layer is filled with, the space that the glue material layer is filled up between the LED grain and the support plate is brilliant to increase the LED
Bond strength between grain and the support plate.
Described crystal coated sealing structure of light-emitting diodes, further comprising an encapsulation glue-line with phosphor,
The encapsulation glue-line can produce corresponding mixed light work to make with colloid mixing using a color fluorescence powder of appropriate proportioning
Encapsulation glue-line, the encapsulation glue-line are coated on external zones of the LED grain in addition to front with uniform thickness
And formed.
Described crystal coated sealing structure of light-emitting diodes, the encapsulation glue-line using spray or mould mode with
External zones of the LED grain in addition to front forms an encapsulation glue-line with uniform thickness.
Described crystal coated sealing structure of light-emitting diodes, the reflector layer are a multiple field reflector layers, and which includes
The combination of non-conductive reflector layer or non-conductive reflector layer and electric conductivity reflector layer.
Described crystal coated sealing structure of light-emitting diodes, the reflector layer by a non-conductive silicon oxide film, one
Electric conductivity aluminium film and a non-conductive silicon oxide film are constituted.
Described crystal coated sealing structure of light-emitting diodes, the reflector layer is by dielectric decentralized Prague
Reflective membrane is constituted.
Compared with prior art, the invention has the advantages that：Noble metal dosage is reduced effectively to drop
Low cost of manufacture.
Additionally, the present invention can make the LED grain must by the effect of the mixed light of the encapsulation glue-line with formed white light or
Other color of light, to save phosphor cost.
The bond strength between the LED grain and the support plate can be increased in the present invention.
Description of the drawings
Fig. 1 is the side sectional view of crystal covering type LED encapsulation structure of the present invention (not setting encapsulation glue-line).
Fig. 2 is the front schematic view of set two spaced electrode layers on the front of LED grain in Fig. 1.
Fig. 3 is the front schematic view of set reflector layer on the front of LED grain in Fig. 1.
Fig. 4 is the front schematic view of set two projections on the front of LED grain in Fig. 1.
Fig. 5 is the side of crystal covering type LED encapsulation structure of the present invention (being provided with the encapsulation glue-line of tool mixed light effect)
Sectional view.
Fig. 6 is the side sectional view for filling up glue material layer in Fig. 5 between LED grain and the support plate.
Description of reference numerals：1- crystal covering type LED encapsulation structures；2- crystal covering type LED encapsulation structures；10-LED
Crystal grain；11- fronts；12- electrode layers；12a- precalculated positions；13- reflector layers；14- projections；20-LED support plates；
21- insulating barriers；22-SMT contacts；23- conducting resinls；30- encapsulates glue-line；40- glue material layers.
Specific embodiment
To make the present invention definitely full and accurate, hereby enumerate preferred embodiment and coordinate following schemes, by the present invention
Structure and its technical characteristic describe in detail as after：
With reference to shown in Fig. 1-Fig. 4, the present invention is a kind of crystal covering type LED encapsulation structure 1, brilliant comprising a LED
Grain 10, is provided with two points of electrode layers 12 opened and be electrically insulated on the front 11 of the LED grain 10 as schemed
Shown in 2, the wherein electrode layer 12 is constituted with aluminium (Al) or copper (Cu), to replace background technology with
The electrode layer that gold-plated (Au) is formed, to reduce noble metal dosage and relative reduction cost of manufacture.Then at the electricity
Formed on pole layer 12 and be provided with a reflector layer 13, wherein the reflector layer 13 relies on PVD (Physical Vapor
Deposition, physical vapour deposition (PVD)) or CVD (Chemical Vapor Deposition, chemical vapor deposition
Product) mode is formed and is covered on the electrode layer 12, but each reservation one on this two points electrode layers 12 opened
Precalculated position 12a is not covered by the reflector layer 13 as shown in Figure 3.Then at this two points electrode layers 12 opened
On the precalculated position 12a not covered above and by the reflector layer 13, (as shown in Figure 3) forms a projection respectively
(bump) 14 as shown in figure 4, wherein projection (bump) 14 is with nickel gold (Ni/Au) or copper gold (Cu/Au)
Formed, the weld pad (bond pad) when being provided as adhesive surface technique (SMT) is used.And rely on above-mentioned two
Electrode layer 12, a reflector layer 13 and two projections (bump) 14 can effectively reduce noble metal dosage to constitute one
To reduce the crystal covering type LED encapsulation structure 1 of cost of manufacture.
Referring again to shown in Fig. 1, the crystal covering type LED encapsulation structure 1 of the present invention is further carried comprising a LED
Plate (LED substrate) 20, it is as shown in Figure 1 to constitute a crystal covering type LED encapsulation structure 2；Wherein should
The surface of LED support plates 20 is provided with an insulating barrier 21, and the insulating barrier 21 is provided with least two points and opens and electrically
The SMT contacts (SMT pad) 22 of insulation but do not limit.Recycling adhesive surface technique (SMT,
Surface-Mount Technology), two projections that will be made up of nickel gold or copper gold in the LED grain 10
14 rely on the such as tin glue (solder paste) of conducting resinl 23 but do not limit, and correspondence is attached at the LED support plates 20
Surface on the set two points SMT contacts 22 opened, effectively reduce noble metal dosage further to form one
To reduce the crystal covering type LED encapsulation structure 2 of cost of manufacture.
With reference to shown in Fig. 5, the crystal covering type LED encapsulation structure 1 of the present invention is further comprising a tool phosphor
Encapsulation glue-line 30, the encapsulation glue-line 30 is to mix to make with colloid using certain color fluorescence powder of appropriate proportioning
The encapsulation glue-line of the tool phosphor of correspondence mixed light effect can be produced, the encapsulation glue-line 30 can be using spraying (spray)
Or mould (molding) mode but do not limit, with the external zones of the LED grain 10 in addition to front 11
Form one and have the encapsulation glue-line 30 of uniform thickness as shown in figure 5, making the LED grain 10 pass through the encapsulation
The mixed light of glue-line 30 acts on forming white light or other color of light；As the encapsulation glue-line 30 is with uniform thick
Degree is coated on the external zones of the LED grain 10, therefore the volume of timber (materials'use amount) of the encapsulation glue-line 30 is obtained
By appropriate control, to be not only advantageous to lift the mixed light action and efficacy of the encapsulation glue-line 30, also relative can save
Save the material cost of phosphor used in the encapsulation glue-line 30.
With reference to shown in Fig. 6, in 2 one embodiment of crystal covering type LED encapsulation structure of the present invention, the wherein LED
Glue material layer 40 is filled with further between crystal grain 10 and the LED support plates 20, the glue material layer 40 is to fill up this
Space between LED grain 10 and the support plate 20, to increase between the LED grain 10 and the support plate 20
Bond strength.
Additionally, in 1 one embodiment of crystal covering type LED encapsulation structure of the present invention, the wherein reflector layer 13
Can be a multiple field reflector layer, which includes non-conductive reflector layer or non-conductive reflector layer is reflective with electric conductivity
The combination of layer, for example, the reflector layer 13 can be by a non-conductive silica (SiO2) film, an electric conductivity aluminium
Film and a non-conductive silica (SiO2) film composition, or by dielectric decentralized Prague reflective membrane
DBR (distributed Bragg reflector) is constituted, but is not used to limit the present invention.
The preferred embodiments of the present invention are the foregoing is only, is merely illustrative for the purpose of the present invention, rather than limit
Property processed；Those of ordinary skill in the art understand, in the spirit and scope limited by the claims in the present invention
Many changes can be carried out to which, is changed, or even equivalent change, but fall within protection scope of the present invention.
Claims (8)
1. a kind of crystal coated sealing structure of light-emitting diodes, it is characterised in that include：
One LED grain, is provided with the front of the LED grain：Two electrode layers for separating and being electrically insulated,
Wherein the electrode layer is constituted with aluminium or copper；
One reflector layer is formed on the electrode layer and is covered on the electrode layer, and in two points of electrodes opened
On layer, one precalculated position of each reservation is not covered by the reflector layer；And
Two separate projections, which is respectively formed on two points of electrode layers opened and is not covered by the reflector layer
Precalculated position on, wherein the projection with nickel gold or copper gold formed, the weld pad being provided as during adhesive surface technique
Use.
2. crystal coated sealing structure of light-emitting diodes as claimed in claim 1, it is characterised in that：Further
Comprising a LED support plates, the surface of the wherein LED support plates is provided with two points of SMT for opening and being electrically insulated and connects
Point, recycles adhesive surface technique two projections being made up of nickel gold or copper gold in the LED grain is relied on and leads
Electric glue is attached on the surface of the LED support plates on the set two points SMT contacts opened with correspondence.
3. crystal coated sealing structure of light-emitting diodes as claimed in claim 2, it is characterised in that：The LED
Glue material layer is filled with further between crystal grain and the LED support plates, the glue material layer fills up the LED grain and the load
Space between plate is increasing the bond strength between the LED grain and the support plate.
4. crystal coated sealing structure of light-emitting diodes as claimed in claim 1, it is characterised in that：Further
Comprising an encapsulation glue-line with phosphor, a color fluorescence powder and glue of the encapsulation glue-line using appropriate proportioning
Body mixing can produce the encapsulation glue-line of correspondence mixed light effect to make, and the encapsulation glue-line is coated on uniform thickness
External zones of the LED grain in addition to front and formed.
5. crystal coated sealing structure of light-emitting diodes as claimed in claim 4, it is characterised in that：The encapsulation
Glue-line is using spraying or moulds mode with the external zones formation one in the LED grain in addition to front with uniform
The encapsulation glue-line of thickness.
6. crystal coated sealing structure of light-emitting diodes as claimed in claim 1, it is characterised in that：This is reflective
Layer is a multiple field reflector layer, and which includes non-conductive reflector layer or non-conductive reflector layer is reflective with electric conductivity
The combination of layer.
7. crystal coated sealing structure of light-emitting diodes as claimed in claim 6, it is characterised in that：This is reflective
Layer is made up of a non-conductive silicon oxide film, an electric conductivity aluminium film and a non-conductive silicon oxide film.
8. crystal coated sealing structure of light-emitting diodes as claimed in claim 6, it is characterised in that：This is reflective
Layer is made up of dielectric decentralized Prague reflective membrane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510604110.3A CN106549089A (en) | 2015-09-21 | 2015-09-21 | Crystal coated sealing structure of light-emitting diodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510604110.3A CN106549089A (en) | 2015-09-21 | 2015-09-21 | Crystal coated sealing structure of light-emitting diodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106549089A true CN106549089A (en) | 2017-03-29 |
Family
ID=58364472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510604110.3A Pending CN106549089A (en) | 2015-09-21 | 2015-09-21 | Crystal coated sealing structure of light-emitting diodes |
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| Country | Link |
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| CN (1) | CN106549089A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112467018A (en) * | 2020-10-20 | 2021-03-09 | 深圳市隆利科技股份有限公司 | Mini-LED/micro-LED surface light source and manufacturing method thereof |
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| CN101226972A (en) * | 2007-01-16 | 2008-07-23 | 台达电子工业股份有限公司 | LED device and preparing process thereof |
| CN203787450U (en) * | 2014-03-25 | 2014-08-20 | 茂邦电子有限公司 | Flip-chip light emitting diode and flip-chip package structure thereof |
| CN204204900U (en) * | 2014-06-06 | 2015-03-11 | 惠州雷通光电器件有限公司 | A kind of LED encapsulation structure |
| CN204991760U (en) * | 2015-09-21 | 2016-01-20 | 茂邦电子有限公司 | Flip chip light emitting diode package structure |
-
2015
- 2015-09-21 CN CN201510604110.3A patent/CN106549089A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101226972A (en) * | 2007-01-16 | 2008-07-23 | 台达电子工业股份有限公司 | LED device and preparing process thereof |
| CN203787450U (en) * | 2014-03-25 | 2014-08-20 | 茂邦电子有限公司 | Flip-chip light emitting diode and flip-chip package structure thereof |
| CN204204900U (en) * | 2014-06-06 | 2015-03-11 | 惠州雷通光电器件有限公司 | A kind of LED encapsulation structure |
| CN204991760U (en) * | 2015-09-21 | 2016-01-20 | 茂邦电子有限公司 | Flip chip light emitting diode package structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112467018A (en) * | 2020-10-20 | 2021-03-09 | 深圳市隆利科技股份有限公司 | Mini-LED/micro-LED surface light source and manufacturing method thereof |
| CN112467018B (en) * | 2020-10-20 | 2021-10-15 | 深圳市隆利科技股份有限公司 | Mini-LED/micro-LED surface light source and manufacturing method thereof |
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