CN103337586B - A kind of without silica-based wafer level LED encapsulation method - Google Patents
A kind of without silica-based wafer level LED encapsulation method Download PDFInfo
- Publication number
- CN103337586B CN103337586B CN201310212099.7A CN201310212099A CN103337586B CN 103337586 B CN103337586 B CN 103337586B CN 201310212099 A CN201310212099 A CN 201310212099A CN 103337586 B CN103337586 B CN 103337586B
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- silica
- conductive electrode
- wafer level
- based wafer
- led encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The present invention relates to a kind of without silica-based wafer level LED encapsulation method, belong to technical field of semiconductor encapsulation.Its technical process is as follows: provide the silicon body (100) with conductive electrode (200); Several LED chips with positive and negative electrode (310) (300) are provided; By LED chip (300) upside-down mounting on conductive electrode (200), form photoluminescent layers (400) on silicon body (100), photoluminescent layers (400) covers the exiting surface of LED chip (300); Remove silicon body (100) and expose conductive electrode (200); At the plating metal on surface weld layer (500) of conductive electrode (200), metallic solder layer (500) is directly connected with conductive electrode (200), at the surface-coated circuit sealer (600) of metallic solder layer (500); Single is formed without silica-based wafer level LED encapsulation structure by the method for wafer cutting and separating.The invention provides that a kind of packaging technology is simple, perfect heat-dissipating, improving extraction efficiency, encapsulation overhead are low without silica-based wafer level LED encapsulation method.
Description
Technical field
The present invention relates to a kind of without silica-based wafer level LED encapsulation method, belong to technical field of semiconductor encapsulation.
Background technology
Along with the fast development of LED technology, the progressively raising of its luminous efficiency, LED can replace conventional light source to use in many places, and the particularly appearance of great power LED, accelerates the speed that LED replaces conventional illumination sources.Compared with traditional lighting source, white light LEDs has many advantages, as: volume is little, energy consumption is low, response is fast, the life-span is long, pollution-free etc., is therefore called forth generation lighting source.But compared with existing fluorescent tube, the packaging cost of current LED itself carries out energy-saving and cost-reducing biggest obstacle, its price be the 2-3 of fluorescent tube doubly, thus become the object that industry is chased with the LED illumination technology of fluorescent tube quite or more low cost.
LED, except reducing costs, is also faced with and solves LED heat radiation, reduce the thermal resistance of LED, increase LED light extraction efficiency, increase the problems such as the reliability of LED.Current envelope turns form and mainly carries out with single form, is about to the LED chip after cutting by a mounted substrate (as metallic support, lead frame, ceramic substrate, metal substrate), then by carry out lead-in wire interconnected, by a some glue; Because nearly all work step is all carry out with single, production efficiency is lower, and production cost is higher; Meanwhile, there is the problem that radiating control difficulty, light efficiency are not high, also have the problems such as reliability, this seriously constrains the application of LED.
Summary of the invention
The object of the invention is to the deficiency overcoming current encapsulation method, provide that a kind of perfect heat-dissipating, improving extraction efficiency, encapsulation overhead are low, good reliability without silica-based wafer level LED encapsulation method.
The object of the present invention is achieved like this: a kind of without silica-based wafer level LED encapsulation method, its technical process is as follows:
There is provided the silicon body with conductive electrode, described conductive electrode is two or more;
There is provided several with the LED chip of positive and negative electrode;
By LED chip upside-down mounting on conductive electrode, form photoluminescent layers on described silicon body by the mode of gum, printing or spraying, described photoluminescent layers covers the exiting surface of LED chip;
By grinding and/or etch process, silicon body is removed, expose conductive electrode;
By the method for plating or chemical plating at the plating metal on surface weld layer of described conductive electrode, described metallic solder layer is directly connected with conductive electrode, and at the surface-coated circuit sealer of metallic solder layer, and form circuit sealer opening;
Single is formed without silica-based wafer level LED encapsulation structure by the method for wafer cutting and separating.
Alternatively, described conductive electrode is formed on silicon body by sputtering, photoetching and/or electric plating method.
Alternatively, described conductive electrode is copper/tin or gold/tin.
Alternatively, described upside-down mounting is completed by the mode of thermocompression bonding or upside-down mounting backflow.
Alternatively, the exiting surface of described photoluminescent layers is plane, cambered surface or lens face.
Alternatively, described metallic solder layer is titanium/copper, titanium tungsten/copper or titanium tungsten/gold.
Alternatively, dry etching or wet etching is etched to described in.
The invention has the beneficial effects as follows:
1, the electrode of LED chip of the present invention is connected with the metallic solder layer at the back side by conductive electrode, electrode due to chip is whole and is connected with metallic solder layer, increase the contact area of heat radiation, improve the radiating rate of LED chip, improve the reliability of product;
2, the photoluminescent layers above LED chip, because chip circumference does not have barrier layer, this encapsulating structure can adapt to the wider LED chip of rising angle;
3, main technique of the present invention realizes in the mode of wafer level, and therefore production cost is lower, and package dimension can be accomplished less, closer to the size of LED chip.
Accompanying drawing explanation
Fig. 1 to Fig. 5 is a kind of schematic diagram without silica-based wafer level LED encapsulation method of one embodiment of the invention.
In figure:
Silicon body 100
Conductive electrode 200
LED chip 300
Electrode 310
Photoluminescent layers 400
Metallic solder layer 500
Circuit sealer 600
Circuit sealer opening 610.
Embodiment
The present invention is a kind of without silica-based wafer level LED encapsulation method, and its technical process is as follows:
As shown in Figure 1, on silicon body 100, form two or more conductive electrodes 200 by sputtering, photoetching and/or electric plating method, the material of conductive electrode 200 is copper/tin, gold/tin etc., and its large I determines according to actual conditions;
As shown in Figure 2, adopt the mode of thermocompression bonding or upside-down mounting backflow, by LED chip 300 upside-down mounting with positive and negative electrode 310 on conductive electrode 200, on silicon body 100, form one deck uniformly higher than the photoluminescent layers 400 of LED chip 300 by the mode of gum, printing or spraying, photoluminescent layers 400 comprises organic silica gel and luminescence generated by light thing;
As shown in Figure 3, by the technique ground and/or etch, silicon body 100 is removed, exposes conductive electrode 200, described in be etched to dry etching or wet etching;
As shown in Figure 4, by the method for plating or chemical plating at the plating metal on surface weld layer 500 of conductive electrode 200, the material of metallic solder layer 500 is the conducting metals such as copper, silver, gold, selects according to method during chips welding.By photoetching process at metallic solder layer 500 surface-coated one deck colloid, form circuit sealer 600, and optionally form circuit sealer opening 610, the mode can selected solder paste application according to attachment process or plant ball realizes welding;
As shown in Figure 5, by the method for wafer cutting and separating formed single without silica-based wafer level LED encapsulation structure.
A kind of main technique without silica-based wafer level LED encapsulation method proposed by the invention all realizes in wafer level mode, and therefore production cost is lower, and package dimension can be less.
Claims (7)
1., without a silica-based wafer level LED encapsulation method, its technical process is as follows:
There is provided the silicon body (100) with conductive electrode (200), described conductive electrode (200) is two or more;
Several LED chips with positive and negative electrode (310) (300) are provided;
By LED chip (300) upside-down mounting on conductive electrode (200), form photoluminescent layers (400) on described silicon body (100) by the mode of gum, printing or spraying, described photoluminescent layers (400) covers the exiting surface of LED chip (300);
By grinding and/or etch process, silicon body (100) is removed, expose conductive electrode (200);
By the method for plating or chemical plating at the plating metal on surface weld layer (500) of described conductive electrode (200), described metallic solder layer (500) is directly connected with conductive electrode (200), and at the surface-coated circuit sealer (600) of metallic solder layer (500), and form circuit sealer opening (610);
Single is formed without silica-based wafer level LED encapsulation structure by the method for wafer cutting and separating.
2. according to claim 1 a kind of without silica-based wafer level LED encapsulation method, it is characterized in that: described conductive electrode (200) is formed on silicon body (100) by sputtering, photoetching and/or electric plating method.
3. according to claim 1 and 2 a kind of without silica-based wafer level LED encapsulation method, it is characterized in that: described conductive electrode (200) is copper/tin or gold/tin.
4. according to claim 1 a kind of without silica-based wafer level LED encapsulation method, it is characterized in that: described upside-down mounting is completed by the mode of thermocompression bonding or upside-down mounting backflow.
5. according to claim 1 a kind of without silica-based wafer level LED encapsulation method, it is characterized in that: the exiting surface of described photoluminescent layers (400) is plane, cambered surface or lens face.
6. according to claim 1 a kind of without silica-based wafer level LED encapsulation method, it is characterized in that: described metallic solder layer (500) is titanium/copper, titanium tungsten/copper or titanium tungsten/gold.
7. according to claim 1 a kind of without silica-based wafer level LED encapsulation method, it is characterized in that: described in be etched to dry etching or wet etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310212099.7A CN103337586B (en) | 2013-05-31 | 2013-05-31 | A kind of without silica-based wafer level LED encapsulation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310212099.7A CN103337586B (en) | 2013-05-31 | 2013-05-31 | A kind of without silica-based wafer level LED encapsulation method |
Publications (2)
| Publication Number | Publication Date |
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| CN103337586A CN103337586A (en) | 2013-10-02 |
| CN103337586B true CN103337586B (en) | 2016-03-30 |
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| CN106299040B (en) * | 2016-08-18 | 2019-01-11 | 厦门市三安光电科技有限公司 | A kind of production method and its film flipped light emitting component of film flipped light emitting component |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369615A (en) * | 2007-08-17 | 2009-02-18 | 广东昭信光电科技有限公司 | Packaging method for low-thermal resistance high-power light-emitting diode |
| CN102252219A (en) * | 2010-05-28 | 2011-11-23 | 深圳市聚飞光电股份有限公司 | Light-emitting diode (LED) street lamp and high-power LED device |
| CN102290524A (en) * | 2011-09-21 | 2011-12-21 | 晶科电子（广州）有限公司 | LED (Light Emitting Diode) device and LED (Light Emitting Diode) module device thereof |
| WO2013028418A1 (en) * | 2011-08-23 | 2013-02-28 | Tyco Electronics Corporation | Metal clad circuit board |
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2013
- 2013-05-31 CN CN201310212099.7A patent/CN103337586B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369615A (en) * | 2007-08-17 | 2009-02-18 | 广东昭信光电科技有限公司 | Packaging method for low-thermal resistance high-power light-emitting diode |
| CN102252219A (en) * | 2010-05-28 | 2011-11-23 | 深圳市聚飞光电股份有限公司 | Light-emitting diode (LED) street lamp and high-power LED device |
| WO2013028418A1 (en) * | 2011-08-23 | 2013-02-28 | Tyco Electronics Corporation | Metal clad circuit board |
| CN102290524A (en) * | 2011-09-21 | 2011-12-21 | 晶科电子（广州）有限公司 | LED (Light Emitting Diode) device and LED (Light Emitting Diode) module device thereof |
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| CN103337586A (en) | 2013-10-02 |
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