CN203866402U - Energy-saving polycrystalline silicon ingotting thermal field structure - Google Patents
Energy-saving polycrystalline silicon ingotting thermal field structure Download PDFInfo
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- CN203866402U CN203866402U CN201420263899.1U CN201420263899U CN203866402U CN 203866402 U CN203866402 U CN 203866402U CN 201420263899 U CN201420263899 U CN 201420263899U CN 203866402 U CN203866402 U CN 203866402U
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Abstract
The utility model discloses an ingotting thermal field, and particularly relates to an energy-saving polycrystalline silicon ingotting thermal field structure. The thermal field structure sequentially comprises an thermal insulation layer, a heating layer, a heat exchange platform and a crucible from inside to outside; the thermal insulation layer adopts a square structure, and comprises a top thermal insulation layer, side thermal insulation layers and a bottom thermal insulation layer; the top thermal insulation layer is fixedly connected with the side thermal insulation layers through bolts; positioning stop blocks are arranged at the lower parts of the side thermal insulation layers; the two sides of the bottom thermal insulation layer are connected with the positioning stop blocks; each thermal insulation layer is formed by compositing an external thermal insulation felt, an inner thermal insulation felt and a thermal insulation layer; the heating layer is in a shape of an inverted Chinese character 'ao', comprises a top heating layer and side heating layers, and is composed of a heater; the heat exchange platform is arranged below the heating layer; supporting columns are arranged at the bottom of the heat exchange platform; the bottom thermal insulation layer is fixed onto the supporting columns; the crucible is arranged on the heat exchange platform, and is in a shape of a Chinese character 'ao'; protective plates are arranged at the periphery of the crucible. The energy-saving polycrystalline silicon ingotting thermal field structure has a simple structure, is obvious in benefits, and is suitable for industrialized production.
Description
Technical field
The utility model relates to photovoltaic industry, especially a kind of polycrystalline silicon ingot casting energy-saving heat field structure.
Background technology
Fossil energy is petered out, and today that environment goes from bad to worse, solar electrical energy generation becomes the hope of human future substitute energy.It is a kind of device of solar generating having superiority most that crystal-silicon solar cell relies on its high-level efficiency and high stability, and wherein polycrystal silicon cell is with higher cost performance, becomes and on Vehicles Collected from Market, occupies more than 60% share.In polycrystalline cast ingot production process, energy consumption cost accounts for 25%-35% of tooling cost, is the major influence factors of polycrystalline tooling cost.
The main lagging material of polycrystalline cast ingot thermal field adopts carbon felt at present, current all ingot furnace thermal field carbon felts all adopt bilayer structure, substantially can meet the basic demand of ingot casting thermal field, and density is smaller, carbon felt is as thermal insulation layer, thickness is not at 10-50mm etc., in the situation that furnace space is limited, the thickness being difficult to by strengthening thermal insulation layer is realized energy-conservation object, consider that carbon felt is expensive simultaneously, thermal conductivity is more higher than relative with inorganic composite materials, causes polycrystalline silicon ingot casting thermal field to exist effect of heat insulation not good enough, the problem that economic benefit is not high.
Utility model content
Goal of the invention: for the existing problem and shortage of above-mentioned prior art, the utility model provides a kind of effective reduction energy consumption, improves the polycrystalline silicon ingot casting energy-saving heat field structure of battery efficiency.
Technical scheme: a kind of polycrystalline silicon ingot casting energy-saving heat field structure of the present invention, described thermal field structure comprises thermal insulation layer from outside to inside successively, zone of heating, heat exchange platform, crucible, described thermal insulation layer is square structure, be divided into thermal insulation layer, side thermal insulation layer, lower thermal insulation layer, described closure insulation is fixedly connected with side thermal insulation layer by bolt, side thermal insulation layer bottom is provided with position block, described lower thermal insulation layer both sides and position block join, described thermal insulation layer is by outer insulation quilt, interior insulation quilt is composited, described outer insulation quilt, between interior insulation quilt, be provided with thermofin, described zone of heating is for falling " spill " structure, and it is divided into top zone of heating, side zone of heating, and described zone of heating is made up of well heater, heat exchange platform is located at zone of heating below, and described heat exchange platform bottom is provided with pillar stiffener, and described lower thermal insulation layer is fixed on pillar stiffener, and described crucible is located on heat exchange platform, and described crucible is " recessed " shape, and crucible surrounding is provided with backplate.
Described position block is located at side thermal insulation layer bottom, upwards extended by side thermal insulation layer bottom, instantly when thermal insulation layer is moved upward to position block with bracing frame, position block props up the dual-side of lower thermal insulation layer, make to realize sealed state in thermal field thermal insulation layer, improve heat insulation effect and utilize more fully heat energy.
In order to improve the suitability of thermofin, described thermofin is the arbitrary layer in silicate thermal baffle or alumina series dope layer; Wherein the thermal baffle of silicate is mutually compound by bolt and outer insulation quilt, interior insulation quilt; Alumina series dope layer is by being applied between outer insulation quilt and interior insulation quilt, makes outer insulation quilt, aluminum oxide dope layer, interior insulation quilt compound successively.
Further described silicate thermal baffle thickness is 3-10mm, when silicate thermal baffle above-mentioned when interval, it is best that its effect of heat insulation and economic benefit reach.
Further described alumina series thickness of coating layer is 1-6mm, and when alumina series thickness of coating layer is above-mentioned when interval, it is best that its effect of heat insulation and economic benefit reach.
Principle of work: the utility model is by being positioned over the crucible of filling silicon material on heat exchange platform, pillar stiffener promotes crucible lifting, the lower thermal insulation layer of being located on pillar stiffener rises thereupon, in the time that lower thermal insulation layer and position block offset, pillar stiffener no longer rises, and described thermal insulation layer is closure state, by side zone of heating, the silicon material in quartz crucible is heated, the heat that described thermal insulation layer guarantee zone of heating produces is not outwards dispersed, and improves heating efficiency.After silicon material melts completely, silicon liquid was upwards solidified to top gradually the end of by, and heat sheds from heat exchange platform in the mode of radiation, described pillar stiffener slow decreasing, due to thermal insulation layer high insulating effect, temperature variation in thermal insulation layer is not very large, and pillar stiffener slow decreasing can effectively reduce the thermal shocking of zone of heating to crystal growth interface, makes crystal growth stable, suppressing lattice defect generates, make crystal the middle and late growth stage thermograde constant, kept the continuity of crystal growth, reduce lattice defect.Described polycrystalline silicon ingot casting energy-saving heat field structure, by the improvement of thermal insulation layer, make whole temperature field temperature more even, overwhelming majority calorific loss can shed from bottom according to design requirement, effectively reduce energy consumption 20%-30%, obtain crystal particle volume less simultaneously, size evenly, the silicon ingot that border is mellow and full, effectively improves the quality of products when energy efficient.
Beneficial effect: compared with prior art, the polycrystalline silicon ingot casting energy-saving heat field structure that the utility model provides compared with prior art, has the following advantages:
1. reduce energy consumption: the utility model, by improving heat insulation layer structure, increases thermofin between inside and outside insulation quilt, effectively improves the heat insulation effect of thermal insulation layer, makes ingot casting stage Energy Intensity Reduction 20%-30%;
2. silicon chip crystal mass is higher: the utility model passes through heat insulation layer structure, make the temperature variation trend in thermal insulation layer mild, effectively reduce the thermal shocking of zone of heating to crystal growth interface, make crystal growth stable, suppressing lattice defect generates, improving minority carrier life time, is that crystal silicon cell efficiency improves 0.1%-0.2%;
The utility model is simple in structure, and beneficial effect is obvious, is suitable for industrialization and produces.
Brief description of the drawings
Fig. 1 is the schematic diagram of polycrystalline silicon ingot casting energy-saving heat field structure;
Fig. 2 is heat insulation layer structure schematic diagram;
Wherein: thermal insulation layer, 14-position block, 21-top zone of heating, 22-side zone of heating, the outer insulation quilt of 111-, the interior insulation quilt of 112-, 113-thermofin under 1-thermal insulation layer, 2-zone of heating, 3-heat exchange platform, 4-crucible, 5-pillar stiffener, the upper thermal insulation layer of 11-, 12-side thermal insulation layer, 13-.
Embodiment
Now in conjunction with Figure of description, the utility model is elaborated:
As Fig. 1, shown in Fig. 2, a kind of polycrystalline silicon ingot casting energy-saving heat field structure, described thermal field structure comprises thermal insulation layer 1 from outside to inside successively, zone of heating 2, heat exchange platform 3, crucible 4, described thermal insulation layer 1 is square structure, be divided into thermal insulation layer 11, side thermal insulation layer 12, lower thermal insulation layer 13, described closure insulation 1 is fixedly connected with side thermal insulation layer 12 by bolt, side thermal insulation layer 12 bottoms are provided with position block 14, described position block 14 is located at side thermal insulation layer 12 bottoms, upwards extended by side thermal insulation layer 12 bottoms, described lower thermal insulation layer 13 both sides and position block 14 join, described thermal insulation layer 1 is by outer insulation quilt 111, interior insulation quilt 112 is composited, described outer insulation quilt 111, between interior insulation quilt 112, be provided with thermofin, described zone of heating 2 is for falling " spill " structure, and it is divided into top zone of heating 21, side zone of heating 22, and described zone of heating 2 is made up of well heater, heat exchange platform 3 is located at zone of heating 2 belows, and described heat exchange platform 3 bottoms are provided with pillar stiffener 5, and described lower thermal insulation layer 13 is fixed on pillar stiffener 5, and described crucible 4 is located on heat exchange platform 3, and described crucible 4 is " recessed " shape, and crucible 4 surroundings are provided with backplate, described thermofin is the arbitrary layer in silicate thermofin 113 or alumina series dope layer, wherein the thermofin 113 of silicate is mutually compound by bolt and outer insulation quilt 111, interior insulation quilt 112, alumina series dope layer is by being applied between outer insulation quilt 111 and interior insulation quilt 112, make outer insulation quilt 111, aluminum oxide dope layer, interior insulation quilt 112 compound successively, further described silicate thermofin 113 thickness are 3-10mm, and further described alumina series thickness of coating layer is 1-6mm.
Embodiment 1
Adopt identical batching, the identical type of furnace, identical technique ingot casting is to improved structure and the contrast of traditional structure object.
The polycrystalline silicon ingot casting energy-saving heat field structure that the utility model provides, the crucible 4 of filling silicon material is positioned on heat exchange platform 3, pillar stiffener 5 promotes crucible 4 and rises, the lower thermal insulation layer 13 of being located on pillar stiffener 5 rises thereupon, in the time that lower thermal insulation layer 13 offsets with position block 14, pillar stiffener 5 no longer rises, described thermal insulation layer 1 is closure state, described thermal insulation layer 1 comprises that the thermofin 113 of silicate is by bolt and outer insulation quilt 111, interior insulation quilt 112 is mutually compound, wherein the thickness of thermofin 113 is 6mm, by zone of heating 2, the silicon material in quartz crucible 4 is heated, described thermal insulation layer 1 ensures that the heat that zone of heating 2 produces outwards do not disperse, improve heating efficiency.After silicon material melts completely, silicon liquid was upwards solidified to top gradually the end of by, heat sheds from heat exchange platform 3 in the mode of radiation, described pillar stiffener 5 slow decreasings, due to thermal insulation layer 1 high insulating effect, temperature variation in thermal insulation layer 1 is not very large, pillar stiffener 5 slow decreasings can effectively reduce the thermal shocking of zone of heating 2 to crystal growth interface, make crystal growth stable, suppressing lattice defect generates, make crystal the middle and late growth stage thermograde constant, kept the continuity of crystal growth, reduce lattice defect.Described polycrystalline silicon ingot casting energy-saving heat field structure, by the improvement of thermal insulation layer 1, makes whole temperature field temperature more even, effectively reduce energy consumption 30%, obtain crystal particle volume less simultaneously, size evenly, the silicon ingot that border is mellow and full, effectively improves the quality of products when energy efficient.
As shown in table 1:
Tradition thermal field and the thermal field that has heat insulating material dividing plate.Comparing result is as follows:
| Tradition thermal field | Polycrystalline silicon ingot casting energy-saving heat field | |
| Energy consumption KW/KG | 7.2 | 5.3 |
| Average minority carrier lifetime/us | 5.9 | 6.3 |
| Average cell efficiency of conversion | 17.7% | 18.1% |
By contrast, there is thermal-insulation baffle plate thermal field direct energy-conservation 26.3%.Have nucleating agent part without nucleating agent part, silicon ingot crystal grain is less more even, the high 0.4us of silicon ingot minority carrier life time, and defect concentration is lower, and battery efficiency improves 0.3%.
Implement 2
Adopt identical batching, the identical type of furnace, identical technique ingot casting is to improved structure and the contrast of traditional structure object.
The polycrystalline silicon ingot casting energy-saving heat field structure that the utility model provides, the crucible 4 of filling silicon material is positioned on heat exchange platform 3, pillar stiffener 5 promotes crucible 4 and rises, the lower thermal insulation layer 13 of being located on pillar stiffener 5 rises thereupon, in the time that lower thermal insulation layer 13 offsets with position block 14, pillar stiffener 5 no longer rises, described thermal insulation layer 1 is closure state, to after alumina series dope layer heat, evenly allocate with solvent, be applied in outer insulation quilt 111 inner sides, smearing thickness is 3mm, mutually compound with interior insulation quilt 112 outsides after alumina series dope layer is dried, and forms thermal insulation layer 1; By zone of heating 2, the silicon material in quartz crucible 4 is heated, described thermal insulation layer 1 ensures that the heat that zone of heating 2 produces outwards do not disperse, and improves heating efficiency.After silicon material melts completely, silicon liquid was upwards solidified to top gradually the end of by, heat sheds from heat exchange platform 3 in the mode of radiation, described pillar stiffener 5 slow decreasings, due to thermal insulation layer 1 high insulating effect, temperature variation in thermal insulation layer 1 is not very large, pillar stiffener 5 slow decreasings can effectively reduce the thermal shocking of zone of heating 2 to crystal growth interface, make crystal growth stable, suppressing lattice defect generates, make crystal the middle and late growth stage thermograde constant, kept the continuity of crystal growth, reduce lattice defect.Described polycrystalline silicon ingot casting energy-saving heat field structure, by the improvement of thermal insulation layer 1, makes whole temperature field temperature more even, effectively reduce energy consumption 20%-30%, obtain crystal particle volume less simultaneously, size evenly, the silicon ingot that border is mellow and full, effectively improves the quality of products when energy efficient.
As shown in table 2:
Tradition thermal field and polycrystalline silicon ingot casting energy-saving heat field.Comparing result is as follows:
| Tradition thermal field | There is thermal-insulation baffle plate thermal field | |
| Energy consumption KW/KG | 7.2 | 5.6 |
| Average minority carrier lifetime/us | 5.8 | 6.1 |
| Average cell efficiency of conversion | 17.7% | 17.9% |
By contrast, there is thermal-insulation baffle plate thermal field direct energy-conservation 26.3%.Have nucleating agent part without nucleating agent part, silicon ingot crystal grain is less more even, the high 0.3us of silicon ingot minority carrier life time, and defect concentration is lower, and battery efficiency improves 0.2%.
Claims (5)
1. a polycrystalline silicon ingot casting energy-saving heat field structure, it is characterized in that: described thermal field structure comprises thermal insulation layer (1) from outside to inside successively, zone of heating (2), heat exchange platform (3), crucible (4), described thermal insulation layer (1) is square structure, be divided into closure insulation (11), side thermal insulation layer (12), lower thermal insulation layer (13), described closure insulation (11) is fixedly connected with side thermal insulation layer (12) by bolt, side thermal insulation layer (12) bottom is provided with position block (14), described lower thermal insulation layer (13) both sides and position block (14) join, described thermal insulation layer (1) is by outer insulation quilt (111), interior insulation quilt (112) is composited, described outer insulation quilt (111), between interior insulation quilt (112), be provided with thermofin (113), described zone of heating (2) is for falling " spill " structure, and it is divided into top zone of heating (21), side zone of heating (22), and described zone of heating (2) is made up of well heater, heat exchange platform (3) is located at zone of heating (2) below, described heat exchange platform (3) bottom is provided with pillar stiffener (5), described lower thermal insulation layer (13) is fixed on pillar stiffener (5), described crucible (4) is located on heat exchange platform (3), described crucible (4) is " recessed " shape, and crucible (4) surrounding is provided with backplate.
2. polycrystalline silicon ingot casting energy-saving heat field structure according to claim 1, is characterized in that: described position block (14) is located at side thermal insulation layer (12) bottom, is upwards extended by side thermal insulation layer (12) bottom.
3. polycrystalline silicon ingot casting energy-saving heat field structure according to claim 1, is characterized in that: described thermofin (113) is silicate thermal baffle or alumina series dope layer; Wherein the thermal baffle of silicate is mutually compound by bolt and outer insulation quilt (111), interior insulation quilt (112); Alumina series dope layer is by being applied between outer insulation quilt (111) and interior insulation quilt (112), makes outer insulation quilt (111), aluminum oxide dope layer, interior insulation quilt (112) compound successively.
4. polycrystalline silicon ingot casting energy-saving heat field structure according to claim 3, is characterized in that: described silicate thermal baffle thickness is 3-10mm.
5. polycrystalline silicon ingot casting energy-saving heat field structure according to claim 3, is characterized in that: described alumina series thickness of coating layer is 1-6mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420263899.1U CN203866402U (en) | 2014-05-22 | 2014-05-22 | Energy-saving polycrystalline silicon ingotting thermal field structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420263899.1U CN203866402U (en) | 2014-05-22 | 2014-05-22 | Energy-saving polycrystalline silicon ingotting thermal field structure |
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| CN203866402U true CN203866402U (en) | 2014-10-08 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105803525A (en) * | 2016-04-05 | 2016-07-27 | 晶科能源有限公司 | Crucible and crucible manufacturing method |
| CN105839180A (en) * | 2016-06-20 | 2016-08-10 | 晶科能源有限公司 | Polycrystal ingot furnace |
-
2014
- 2014-05-22 CN CN201420263899.1U patent/CN203866402U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105803525A (en) * | 2016-04-05 | 2016-07-27 | 晶科能源有限公司 | Crucible and crucible manufacturing method |
| CN105839180A (en) * | 2016-06-20 | 2016-08-10 | 晶科能源有限公司 | Polycrystal ingot furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141008 Termination date: 20180522 |