CN202323098U - Graphite substrate of directional solidification furnace - Google Patents
Graphite substrate of directional solidification furnace Download PDFInfo
- Publication number
- CN202323098U CN202323098U CN 201120424127 CN201120424127U CN202323098U CN 202323098 U CN202323098 U CN 202323098U CN 201120424127 CN201120424127 CN 201120424127 CN 201120424127 U CN201120424127 U CN 201120424127U CN 202323098 U CN202323098 U CN 202323098U
- Authority
- CN
- China
- Prior art keywords
- base plate
- heat conduction
- directional solidification
- solidification furnace
- graphite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The utility model relates to a novel graphite substrate of a directional solidification furnace. The novel graphite substrate comprises directional heat conduction tables and a support substrate, wherein the directional heat conduction tables are arranged on the support substrate; and intervals are reserved among the directional heat conduction tables. According to the graphite substrate disclosed by the utility model, the improved directional solidification furnace overcomes the defects of the traditional directional solidification furnace; and the graphite substrate is simple in preparation method, low in cost and wide in application prospect.
Description
Technical field
The utility model relates to a kind of graphite base plate, particularly a kind of graphite base plate of directional solidification furnace.
Background technology
Along with the supply day of conventional energy resources is becoming tight; Pollute serious day by day; Each state all be devoted to develop cleaning, renewable energy source, advantages such as abundance, cleanliness without any pollution, efficiency of conversion height are supplied with in solar energy power generating with it, become one of main developing direction of new forms of energy.Solar-energy photo-voltaic cell in the market is mainly occupied by crystal silicon solar batteries, and polysilicon solar cell possesses the advantage that cost is low, output is big, in occupation of the market of solar cell more than 60%.Polysilicon solar cell be with polysilicon chip as substrate, through the production process of polysilicon chip and battery, process solar cell.Because the influence at intercrystalline interface, make polysilicon at aspects such as mechanical property, electrical properties all not as silicon single crystal, this also affects the photoelectric transformation efficiency of battery to a great extent.Therefore the quantity, the increase grain-size that reduce polysilicon chip crystal grain are one of important channels of improving polysilicon chip quality and conversion efficiency of solar cell.
Yet, because factors such as bottom area is excessive, crucible unfairness make that the nucleation stage of existing ingot casting is a unordered state; Can form a large amount of little crystal grain in the bottom; Make that the quantity of crystal grain is too much, crystal grain undersized, and then influenced the quality of silicon ingot and the efficiency of conversion of battery.
The utility model content
In order to improve the quality of polysilicon heavy stone used as an anchor, the utility model improves the graphite base plate of directional solidification furnace.
The utility model provides a kind of graphite base plate of directional solidification furnace, and it comprises directed heat conduction platform and support base plate that directed heat conduction platform is arranged at and supports on the base plate, is provided with between the directed heat conduction platform at interval.
Wherein, the xsect of described directed heat conduction platform is a square, and the length of side is 65~150mm.
Wherein, the height of described directed heat conduction platform is 2~10mm.
Wherein, the width at described interval is 12mm.
Wherein, said graphite base plate is with static pressure high purity graphite material or carbon-carbon composite preparation.
After the graphite base plate improved, the size of the polycrystal silicon ingot of directional solidification furnace preparation increased, and quantity reduces; Quality improves, and then has promoted the transformation efficiency of the battery of preparation, has overcome the defective of prior art; Simultaneously do not increase production cost, have broad application prospects.
Description of drawings
The structural representation of Fig. 1 the utility model graphite base plate
The vertical view of Fig. 2 the utility model graphite base plate
Wherein, 1 is directed heat conduction platform, and 2 support base plate, and 3 is at interval.
Embodiment
Shown in Fig. 1~2, the utility model provides a kind of graphite base plate of directional solidification furnace, and it comprises directed heat conduction platform 1 and support base plate 2 that directed heat conduction platform 1 is arranged at and supports on the base plate 2, and interval 3 is set between the directed heat conduction platform 1.
Wherein, the xsect of described directed heat conduction platform 1 is a square, and the length of side is 65~150mm.
Wherein, the height of described directed heat conduction platform 1 is 2~10mm.
Wherein, the width at described interval 3 is 12mm.
Wherein, said graphite base plate is with static pressure high purity graphite material or carbon-carbon composite preparation.
The directional solidification furnace conduction mode of the utility model improved is easy to control; The distribution of condensate depression is more optimized; The preferential nucleation of silicon melt of directed heat conduction platform top makes the grain formation growth mechanism of competition according to qualifications between graphite post top and the interstitial area top, thereby reaches the grain-size maximization of graphite post top; The purpose of minimum numberization further reaches the purpose of the efficiency of conversion of the solar cell that improves preparation.
Claims (5)
1. the graphite base plate of a directional solidification furnace is characterized in that: it comprises directed heat conduction platform (1) and supports base plate (2) that directed heat conduction platform (1) is arranged at and supports on the base plate (2), and (3) at interval are set between the directed heat conduction platform (1).
2. graphite base plate according to claim 1 is characterized in that: the xsect of described directed heat conduction platform (1) is square, and the length of side is 65~150mm.
3. graphite base plate according to claim 1 is characterized in that: the height of described directed heat conduction platform (1) is 2~10mm.
4. graphite base plate according to claim 1 is characterized in that: the width of described interval (3) is 12mm.
5. graphite base plate according to claim 1 is characterized in that: said graphite base plate is with static pressure high purity graphite material or carbon-carbon composite preparation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201120424127 CN202323098U (en) | 2011-10-31 | 2011-10-31 | Graphite substrate of directional solidification furnace |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201120424127 CN202323098U (en) | 2011-10-31 | 2011-10-31 | Graphite substrate of directional solidification furnace |
Publications (1)
Publication Number | Publication Date |
---|---|
CN202323098U true CN202323098U (en) | 2012-07-11 |
Family
ID=46435085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201120424127 Expired - Fee Related CN202323098U (en) | 2011-10-31 | 2011-10-31 | Graphite substrate of directional solidification furnace |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN202323098U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107299391A (en) * | 2017-07-12 | 2017-10-27 | 晶科能源有限公司 | A kind of polycrystalline ingot furnace cooling platform and polycrystalline ingot furnace |
-
2011
- 2011-10-31 CN CN 201120424127 patent/CN202323098U/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107299391A (en) * | 2017-07-12 | 2017-10-27 | 晶科能源有限公司 | A kind of polycrystalline ingot furnace cooling platform and polycrystalline ingot furnace |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101654805B (en) | Preparation method of casting polysilicon with large crystal grains in single crystal direction | |
CN204779921U (en) | Novel polycrystalline silicon side layering heating device | |
CN201966217U (en) | Crystalline silicon solar cell back electrode | |
CN202142545U (en) | Solar-grade monocrystalline silicon chip | |
CN202390560U (en) | Large-capacity polysilicon ingot furnace thermal field structure | |
CN202265623U (en) | Crucible for polycrystalline ingot furnace to cast mono-like crystalline silicon | |
CN202323098U (en) | Graphite substrate of directional solidification furnace | |
CN103112093A (en) | Sliced method of polycrystalline silicon solar cell | |
CN202022979U (en) | Large-capacity graphite wafer carrier | |
CN201560248U (en) | Graphite crucible for single crystal furnace | |
CN206635458U (en) | A kind of polysilicon ingot crucible | |
CN105063742A (en) | Mono-like crystal growth method, mono-like silicon ingot and mono-like battery | |
CN204144294U (en) | Silicon wafer bearing box | |
CN201933196U (en) | Graphite crucible for single crystal furnace | |
CN203393255U (en) | Crucible for realizing no black edges of polycrystalline silicon cast ingot | |
CN202717880U (en) | Novel polysilicon ingot casting furnace thermal field structure | |
CN202144522U (en) | Crucible | |
CN203866402U (en) | Energy-saving polycrystalline silicon ingotting thermal field structure | |
CN203558861U (en) | Water-cooled copper crucible applied to smelting polysilicon with electron beam | |
CN201864791U (en) | Graphite guiding cylinder of 800 type silicon single crystal furnace | |
CN202786506U (en) | Crucible padding plate for efficient multicrystalline wafer production | |
CN204080180U (en) | A kind of thermal field structure casting solar level efficient polycrystalline silicon ingot | |
CN203573999U (en) | Cooling device of polysilicon solar energy graphite boat sheet loading room | |
CN204825130U (en) | High -efficient crucible is used to polycrystal ingot casting | |
CN203846136U (en) | Thermal field structure for improving quality of cast crystalline silicon ingot |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120711 Termination date: 20171031 |
|
CF01 | Termination of patent right due to non-payment of annual fee |