CN202786506U - Crucible padding plate for efficient multicrystalline wafer production - Google Patents
Crucible padding plate for efficient multicrystalline wafer production Download PDFInfo
- Publication number
- CN202786506U CN202786506U CN 201220420182 CN201220420182U CN202786506U CN 202786506 U CN202786506 U CN 202786506U CN 201220420182 CN201220420182 CN 201220420182 CN 201220420182 U CN201220420182 U CN 201220420182U CN 202786506 U CN202786506 U CN 202786506U
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- China
- Prior art keywords
- crucible
- backing plate
- padding plate
- grooves
- plate body
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Abstract
The utility model discloses a crucible padding plate for efficient multicrystalline wafer production. The padding plate comprises a crucible padding plate body (1), and is characterized in that a plurality of crisscrossed grooves (2) with heat insulation strips (3) embedded therein are formed on the upper surface of the crucible padding plate body (1). According to the utility model, with the plurality of crisscrossed grooves on the upper surface of the crucible padding plate body, the heat dissipating capacity of the part where the crucible and the crucible padding plate are in direct contact is larger than that of the parts where the crucible is in contact with the grooves, thereby achieving the purpose of preferential growth and screening through changing the temperature distribution of the bottom of the crucible; and as the grooves are spaced and heat insulation strips are embedded into the grooves or heat-insulating coating materials are coated on the grooves, horizontal heat dissipation of the crucible padding plate is effectively reduced. Therefore, the crucible padding plate has the advantages of effectively changing crystal growth sequence and reducing horizontal temperature gradient.
Description
Technical field
The utility model relates to a kind of crucible backing plate for efficient polysilicon chip production, belongs to polysilicon chip and makes the field.
Background technology
The continuous minimizing of Nonrenewable energy resources, so that renewable energy source paid close attention to more and more widely, wind energy, the renewable energy sources such as water energy are subject to the very big impact of the conditions such as geographical position, weather, and the utilization of sun power becomes the main force that renewable resources utilizes.
Photovoltaic industry is the part that sun power utilizes, and photovoltaic cell mainly is crystal silicon cell at present, and crystal silicon cell is occupied an leading position with polysilicon and monocrystalline silicon battery again, and silicon single crystal is because its single crystal orientation, and battery efficiency is higher, but that shortcoming is cost is also higher; Polycrystal silicon cell efficient is lower than monocrystalline silicon battery 1.5 ~ 2%, but cost is lower; At present in the photovoltaic industry single crystal casting has appearred, and namely so-called " accurate monocrystalline ", but the casting cost of this technology is high, and can't solve at present the associated problem that self and rear end product occur, so still be in conceptual phase.
From the composite factor analysis, the development of polysilicon chip remains main flow trend, because it has good cost advantage, easy production technique.At present the polysilicon chip battery efficiency mainly concentrates in 16.6 ~ 17.0% the horizontal extent, in order to improve the polysilicon chip competitive power, just must improve its quality and improve the battery efficiency of polysilicon chip.
In the process of casting polycrystalline silicon sheet, the crucible backing plate upper and lower surface of traditional crucible bottom is the plane, it is Homogeneouslly-radiating in crystal forming core, process of growth, can't change the grain growing order, and backing plate laterally conducts heat more, so that horizontal thermograde is higher, affects crystal forming core and growth, reduce the quality of polysilicon chip, thereby reduced battery efficiency.
Summary of the invention
The purpose of this utility model is to overcome above-mentioned deficiency, and a kind of crucible backing plate that efficient polysilicon chip is produced that is used for that can effectively change the grain growing order and reduce Transverse Temperature Gradient is provided.
The purpose of this utility model is achieved in that
A kind of crucible backing plate for efficient polysilicon chip production, it comprises crucible backing plate body, the upper surface of described crucible backing plate body is provided with many grooves that are criss-cross arranged.
As a kind of preferred, the cross-sectional shape of described groove is del, inverted trapezoidal or rectangle.
As a kind of preferred, be equipped with heat insulating strip in the described groove or be coated with thermal insulation coatings.
As a kind of preferred, the total thickness H of described crucible backing plate body is 0.1 ~ 10cm, and the cross-sectional shape of described groove is del, and the high h of del is 0.2 ~ 9.9cm, the bottom side length L of del
1Be 0.1 ~ 10cm, the spacing d of adjacent two grooves is 0.1 ~ 5cm.
As a kind of preferred, the total thickness H of described crucible backing plate body is 0.1 ~ 10cm, and the cross-sectional shape of described groove is inverted trapezoidal, and the high h of inverted trapezoidal is 0.2 ~ 9.9cm, the long L of the top margin of inverted trapezoidal
1Be 0.1 ~ 10cm, the bottom side length L of inverted trapezoidal
2Be 0.1 ~ 10cm, the spacing d of adjacent two grooves is 0.1 ~ 5cm.
As a kind of preferred, the total thickness H of described crucible backing plate body is 0.1 ~ 10cm, and described slot cross-section is shaped as rectangle, and the high h of rectangle is 0.2 ~ 9.9cm, the wide L of rectangle
1Be 0.1 ~ 10cm, groove and groove interval d are 0.1 ~ 5cm.
Compared with prior art, the beneficial effects of the utility model are:
The utility model is because the upper surface of crucible backing plate body is provided with many grooves that are criss-cross arranged, the heat dissipation capacity of crucible and the direct contact position of crucible backing plate is greater than crucible and groove contact position, the temperature distribution that changes crucible bottom reaches the purpose of preferred growth and screening, simultaneously because the interval of groove and groove, and be equipped with heat insulating strip in the groove or be coated with thermal insulation coatings, can effectively reduce the horizontal heat loss of crucible backing plate, so that the crucible backing plate of this efficient polysilicon chip production has effective change grain growing order and reduces the advantage of Transverse Temperature Gradient.
Description of drawings
Fig. 1 is the structural representation that the utility model is used for the crucible backing plate of efficient polysilicon chip production.
Fig. 2 is the side-view of the utility model embodiment 1.
Fig. 3 is the side-view of the utility model embodiment 2.
Fig. 4 is the side-view of the utility model embodiment 3.
Wherein:
Crucible backing plate body 1
Heat insulating strip 3.
Embodiment
Referring to Fig. 1, a kind of crucible backing plate for efficient polysilicon chip production that the utility model relates to, it comprises crucible backing plate body 1, described crucible backing plate body 1 is square, the upper surface of described crucible backing plate body 1 is provided with many grooves that are criss-cross arranged 2, the cross-sectional shape of described groove 2 is del, inverted trapezoidal or rectangle, is equipped with heat insulating strip 3 in the described groove 2 or is coated with thermal insulation coatings, and the size of described heat insulating strip 3 is less than the size of groove 2.
Embodiment 1:
Referring to Fig. 2, the total thickness H of crucible backing plate body 1 is 4cm, and the cross-sectional shape of groove 2 is del, and the high h of del is 1cm, the bottom side length L of del
1Be 1cm, the spacing d of adjacent two grooves 2 is 0.5cm, is equipped with heat insulating strip 3 in the described groove 2, and heat insulating strip 3 is that the hard felt of graphite becomes.
Embodiment 2:
Referring to Fig. 3, the total thickness H of crucible backing plate body 1 is 2.5cm, and the cross-sectional shape of groove 2 is inverted trapezoidal, and the high h of inverted trapezoidal is 0.5cm, the long L of the top margin of inverted trapezoidal
1Be 1.5cm, the bottom side length L of inverted trapezoidal
2Be 0.5cm, the spacing d of adjacent two grooves 2 is 0.25cm, is equipped with heat insulating strip 3 in the described groove 2, and heat insulating strip 3 is that the hard felt of graphite becomes.
Embodiment 3:
Referring to Fig. 4, the total thickness H of crucible backing plate body 1 is 2.5cm, and groove 2 cross-sectional shapes are rectangle, and the high h of rectangle is 1cm, and the wide L1 of rectangle is 0.5cm, and groove and groove interval d are 0.5cm, are equipped with heat insulating strip 3 in the described groove 2, and heat insulating strip 3 is that the hard felt of graphite becomes.
Below be the comparing result of polycrystal silicon cell efficient under the same process condition that three embodiment produce:
Can find out that by above embodiment by crucible backing plate surface is arranged groove, average efficiency gain has reached 0.15%, can effectively promote the quality of polycrystal silicon cell.
It should be noted that in addition the utility model is not limited in this in the embodiment of enumerating more than adopting, so the relevant non-intrinsically safe that other those skilled in the art make according to the utility model changing, should be the scope that the utility model is protected equally.
Claims (6)
1. one kind is used for the crucible backing plate that efficient polysilicon chip is produced, and it comprises crucible backing plate body (1), it is characterized in that the upper surface of described crucible backing plate body (1) is provided with many grooves that are criss-cross arranged (2).
2. a kind of crucible backing plate of producing for efficient polysilicon chip according to claim 1, the cross-sectional shape that it is characterized in that described groove (2) is del, inverted trapezoidal or rectangle.
3. a kind of crucible backing plate for efficient polysilicon chip production according to claim 1 and 2 is characterized in that being equipped with heat insulating strip (3) in the described groove (2) or being coated with thermal insulation coatings.
4. a kind of crucible backing plate of producing for efficient polysilicon chip according to claim 3, the total thickness H that it is characterized in that described crucible backing plate body (1) is 0.1 ~ 10cm, the cross-sectional shape of described groove (2) is del, the high h of del is 0.2 ~ 9.9cm, the bottom side length L of del
1Be 0.1 ~ 10cm, the spacing d of adjacent two grooves (2) is 0.1 ~ 5cm.
5. a kind of crucible backing plate of producing for efficient polysilicon chip according to claim 3, the total thickness H that it is characterized in that described crucible backing plate body (1) is 0.1 ~ 10cm, the cross-sectional shape of described groove (2) is inverted trapezoidal, and the high h of inverted trapezoidal is 0.2 ~ 9.9cm, the long L of the top margin of inverted trapezoidal
1Be 0.1 ~ 10cm, the bottom side length L of inverted trapezoidal
2Be 0.1 ~ 10cm, the spacing d of adjacent two grooves (2) is 0.1 ~ 5cm.
6. a kind of crucible backing plate of producing for efficient polysilicon chip according to claim 3, the total thickness H that it is characterized in that described crucible backing plate body (1) is 0.1 ~ 10cm, described groove (2) cross-sectional shape is rectangle, and the high h of rectangle is 0.2 ~ 9.9cm, the wide L of rectangle
1Be 0.1 ~ 10cm, groove and groove interval d are 0.1 ~ 5cm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220420182 CN202786506U (en) | 2012-08-23 | 2012-08-23 | Crucible padding plate for efficient multicrystalline wafer production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220420182 CN202786506U (en) | 2012-08-23 | 2012-08-23 | Crucible padding plate for efficient multicrystalline wafer production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202786506U true CN202786506U (en) | 2013-03-13 |
Family
ID=47813802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220420182 Expired - Fee Related CN202786506U (en) | 2012-08-23 | 2012-08-23 | Crucible padding plate for efficient multicrystalline wafer production |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202786506U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105803525A (en) * | 2016-04-05 | 2016-07-27 | 晶科能源有限公司 | Crucible and crucible manufacturing method |
-
2012
- 2012-08-23 CN CN 201220420182 patent/CN202786506U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105803525A (en) * | 2016-04-05 | 2016-07-27 | 晶科能源有限公司 | Crucible and crucible manufacturing method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20180914 Granted publication date: 20130313 |
|
| PP01 | Preservation of patent right | ||
| PD01 | Discharge of preservation of patent |
Date of cancellation: 20210914 Granted publication date: 20130313 |
|
| PD01 | Discharge of preservation of patent | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130313 Termination date: 20180823 |
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| CF01 | Termination of patent right due to non-payment of annual fee |