CN203734533U - Boost circuit with double MOS transistors in serial connection - Google Patents
Boost circuit with double MOS transistors in serial connection Download PDFInfo
- Publication number
- CN203734533U CN203734533U CN201420030985.8U CN201420030985U CN203734533U CN 203734533 U CN203734533 U CN 203734533U CN 201420030985 U CN201420030985 U CN 201420030985U CN 203734533 U CN203734533 U CN 203734533U
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- diode
- oxide
- semiconductor
- metal
- mos transistor
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Abstract
The utility model discloses a boost circuit with double MOS transistors in serial connection. The boost circuit comprises an MOS transistor Q1, a diode D1, a resistor R1, an MOS transistor Q2, a Zener diode D2 and a diode D3, wherein the source electrode of the MOS transistor Q1 is connected with one end of the diode D1, the other end of the diode D1 is connected with one end of the resistor R1, the drain electrode of the MOS transistor Q1 is connected with the source electrode of the MOS transistor Q2 and then connected with one end of the Zener diode D2, the other end of the Zener diode D2 is connected with the grid electrode of the MOS transistor Q1, one end of the diode D3 and the other end of the resistor R1, and the other end of the diode D3 is connected with the drain electrode of the MOS transistor Q2. According to the utility model, the two MOS transistors are connected in series to reduce the withstand voltage of each MOS transistor; and when the input voltage is between AC90V and AC750V, normal MOS transistors whose withstand voltage is 800V can be selected, thereby greatly reducing the cost and improving the efficiency.
Description
Technical field
The utility model relates to a kind of booster circuit, relates in particular to a kind of double-tube series booster circuit.
Background technology
Traditional booster circuit as shown in Figure 1, because metal-oxide-semiconductor (mos field effect transistor) withstand voltage outline is higher than output voltage, in the time that the input voltage of mine system is AC90V-AC750V, metal-oxide-semiconductor need to be selected the withstand voltage unconventional metal-oxide-semiconductor of 1500V, not only cost is high, and efficiency is low.
Utility model content
The purpose of this utility model is, by a kind of double-tube series booster circuit, to solve the problem that above background technology part is mentioned.
For reaching this object, the utility model by the following technical solutions:
A kind of double-tube series booster circuit, comprises metal-oxide-semiconductor Q1, diode D1, resistance R 1, metal-oxide-semiconductor Q2, voltage stabilizing didoe D2 and diode D3; Wherein, the source electrode of described metal-oxide-semiconductor Q1 connects one end of diode D1, one end of the other end contact resistance R1 of diode D1, node after the drain electrode of metal-oxide-semiconductor Q1 is connected with the source electrode of metal-oxide-semiconductor Q2 connects one end of voltage stabilizing didoe D2, the other end of voltage stabilizing didoe D2 connects the grid of metal-oxide-semiconductor Q1, one end of diode D3, the other end of resistance R 1, and the other end of diode D3 connects the drain electrode of metal-oxide-semiconductor Q2.
Especially, described diode D3 selects TVS pipe.
The double-tube series booster circuit that the utility model provides is connected in series two metal-oxide-semiconductors, reduced the withstand voltage of each metal-oxide-semiconductor, in the time that input voltage is AC90V-AC750V, can select withstand voltage is the conventional metal-oxide-semiconductor of 800V, not only greatly reduce cost, and promoted efficiency.
Brief description of the drawings
Fig. 1 is traditional boost circuit structure figure;
The double-tube series boost circuit structure figure that Fig. 2 provides for the utility model embodiment.
Embodiment
Below in conjunction with drawings and Examples, the utility model is described in further detail.Be understandable that, specific embodiment described herein is only for explaining the utility model, but not to restriction of the present utility model.It also should be noted that, for convenience of description, in accompanying drawing, only show the part relevant to the utility model but not full content.
Please refer to shown in Fig. 2, in the present embodiment, double-tube series booster circuit specifically comprises: metal-oxide-semiconductor Q1, diode D1, resistance R 1, metal-oxide-semiconductor Q2, voltage stabilizing didoe D2, diode D3, capacitor C 1, inductance L 1, capacitor C 2, capacitor C 3 and capacitor C 4.
The source electrode of described metal-oxide-semiconductor Q1 connects one end of diode D1, one end of the other end contact resistance R1 of diode D1, node after the drain electrode of metal-oxide-semiconductor Q1 is connected with the source electrode of metal-oxide-semiconductor Q2 connects one end of voltage stabilizing didoe D2, the other end of voltage stabilizing didoe D2 connects the grid of metal-oxide-semiconductor Q1, one end of diode D3, the other end of resistance R 1, and the other end of diode D3 connects the drain electrode of metal-oxide-semiconductor Q2.After described capacitor C 1 is connected in series with inductance L 1, one end connects the source electrode of metal-oxide-semiconductor Q1, and the other end connects the drain electrode of metal-oxide-semiconductor Q2.After described capacitor C 2, capacitor C 3 and capacitor C 4 are connected in series, one end connects the drain electrode of metal-oxide-semiconductor Q2, and the other end connects the node after diode D1 is connected with resistance R 1.
In the present embodiment, described diode D3 can be both single TVS pipe (Transient Suppression Diode), can be also multiple TVS pipes that are connected in series.Because metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 are connected in series, reduce the withstand voltage of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2, so in the time that input voltage is AC90V-AC750V, it is the conventional metal-oxide-semiconductor of 800V that metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 can select withstand voltage, not only greatly reduce product cost, and promoted efficiency.
Below the operation principle of double-tube series booster circuit in the present embodiment is briefly described.
In the time of metal-oxide-semiconductor Q2 conducting, metal-oxide-semiconductor Q1 produces 15V left and right voltage turn-on by resistance R 1 and diode D2 at GS end; In the time that metal-oxide-semiconductor Q2 ends, when DS voltage reaches diode D3 terminal voltage, the GS voltage of metal-oxide-semiconductor Q1 reduces to 0, metal-oxide-semiconductor Q1 cut-off.When metal-oxide-semiconductor Q2 cut-off, voltage is no more than the voltage of diode D3, metal-oxide-semiconductor Q1 cut-ff voltage equals output voltage and deducts the voltage of diode D3, if the total clamp voltage of diode D3 is 750V, output voltage is not higher than 1500V, and can select withstand voltage is the conventional metal-oxide-semiconductor of 800V.
The technical solution of the utility model is connected in series two metal-oxide-semiconductors, has reduced the withstand voltage of each metal-oxide-semiconductor, and in the time that input voltage is AC90V-AC750V, can select withstand voltage is the conventional metal-oxide-semiconductor of 800V, not only greatly reduces cost, and has promoted efficiency.
Note, above are only preferred embodiment of the present utility model and institute's application technology principle.Skilled person in the art will appreciate that the utility model is not limited to specific embodiment described here, can carry out for a person skilled in the art various obvious variations, readjust and substitute and can not depart from protection range of the present utility model.Therefore, although the utility model is described in further detail by above embodiment, but the utility model is not limited only to above embodiment, in the situation that not departing from the utility model design, can also comprise more other equivalent embodiment, and scope of the present utility model is determined by appended claim scope.
Claims (2)
1. a double-tube series booster circuit, is characterized in that, comprises metal-oxide-semiconductor Q1, diode D1, resistance R 1, metal-oxide-semiconductor Q2, voltage stabilizing didoe D2 and diode D3; Wherein, the source electrode of described metal-oxide-semiconductor Q1 connects one end of diode D1, one end of the other end contact resistance R1 of diode D1, node after the drain electrode of metal-oxide-semiconductor Q1 is connected with the source electrode of metal-oxide-semiconductor Q2 connects one end of voltage stabilizing didoe D2, the other end of voltage stabilizing didoe D2 connects the grid of metal-oxide-semiconductor Q1, one end of diode D3, the other end of resistance R 1, and the other end of diode D3 connects the drain electrode of metal-oxide-semiconductor Q2.
2. double-tube series booster circuit according to claim 1, is characterized in that, described diode D3 selects TVS pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420030985.8U CN203734533U (en) | 2014-01-17 | 2014-01-17 | Boost circuit with double MOS transistors in serial connection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420030985.8U CN203734533U (en) | 2014-01-17 | 2014-01-17 | Boost circuit with double MOS transistors in serial connection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203734533U true CN203734533U (en) | 2014-07-23 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420030985.8U Expired - Fee Related CN203734533U (en) | 2014-01-17 | 2014-01-17 | Boost circuit with double MOS transistors in serial connection |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203734533U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103795243A (en) * | 2014-01-17 | 2014-05-14 | 无锡市金赛德电子有限公司 | Double-tube series-connection booster circuit |
-
2014
- 2014-01-17 CN CN201420030985.8U patent/CN203734533U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103795243A (en) * | 2014-01-17 | 2014-05-14 | 无锡市金赛德电子有限公司 | Double-tube series-connection booster circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140723 Termination date: 20220117 |