CN204156524U - A kind of MOSFET pipe reverse-connection preventing circuit - Google Patents

A kind of MOSFET pipe reverse-connection preventing circuit Download PDF

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Publication number
CN204156524U
CN204156524U CN201420463220.3U CN201420463220U CN204156524U CN 204156524 U CN204156524 U CN 204156524U CN 201420463220 U CN201420463220 U CN 201420463220U CN 204156524 U CN204156524 U CN 204156524U
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CN
China
Prior art keywords
preventing circuit
connection preventing
mosfet pipe
reverse
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201420463220.3U
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Chinese (zh)
Inventor
周厚明
程峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WUHAN MAIWE OPTOELECTRONICS TECHNOLOGY Co Ltd
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WUHAN MAIWE OPTOELECTRONICS TECHNOLOGY Co Ltd
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Publication date
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Priority to CN201420463220.3U priority Critical patent/CN204156524U/en
Application granted granted Critical
Publication of CN204156524U publication Critical patent/CN204156524U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

A kind of MOSFET pipe reverse-connection preventing circuit, utilize switching characteristic and the low on-resistance characteristic of metal-oxide-semiconductor, the pressure drop that uses the anti-circnit NOT of routine of diode to bring and the larger defect of power loss can be overcome, minimizing power supply is connect and inverse time has good effect to the infringement that load brings.

Description

A kind of MOSFET pipe reverse-connection preventing circuit
Technical field
The utility model is a kind of MOSFET pipe reverse-connection preventing circuit, is particularly related to basic electronic circuit field.
Background technology
In electronic product practical application, power positive cathode connects inverse time, can produce great electric current, successive load components and parts is all burnt, so need reverse connection prevention protection circuit.Traditional protective circuit uses diode, but diode exists pressure drop too greatly, the problem that power loss is serious, so need the reverse-connection preventing circuit that a kind of new pressure drop is little, power consumption is little now.
Summary of the invention
Instant invention overcomes to use and bring pressure drop and power loss larger problem diode anti-inverse time, this reverse connection prevention protection circuit well make use of the turn-on and turn-off ability of MOSFET, and what prevent reverse power connection brings infringement to load.
Described metal-oxide-semiconductor is P channel mosfet, leaks that D is extremely direct is connected with power input, and source S is extremely direct to be connected with power output end, and grid G is extremely direct to be connected with the common port of two divider resistances, divider resistance one end ground connection, a termination output.
Fig. 1 is MOSFET reverse-connection preventing circuit schematic diagram, and the MOSFET of P raceway groove, R1 and R2 are two divider resistances.When power supply normally accesses, between the GS of metal-oxide-semiconductor, voltage is negative, and metal-oxide-semiconductor conducting, circuit normally works.And when reverse power connection, between the GS of metal-oxide-semiconductor, voltage is just, now MOS turns off, thus avoids successive load and burn out.
And MOSFET conducting resistance is quite little, belong to milliohm level, so its pressure drop and power consumption also can be much little compared with diode.
This circuit design is simple, and cost is lower, and power loss is less, simultaneously flexible configuration, can need to select MOSFET pipe and divider resistance according to practical application.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of MOSFET reverse-connection preventing circuit.
Embodiment
Embodiment of the present utility model is described in detail below in conjunction with accompanying drawing 1.
When power supply normally accesses, between the GS of metal-oxide-semiconductor, voltage is negative, and metal-oxide-semiconductor conducting, circuit normally works.And when reverse power connection, between the GS of metal-oxide-semiconductor, voltage is just, now MOS turns off, thus avoids successive load and burn out.

Claims (1)

1. a MOSFET pipe reverse-connection preventing circuit, is characterized in that: described metal-oxide-semiconductor is P channel mosfet, leaks that D is extremely direct is connected with power input, source S is extremely direct to be connected with power output end, grid G is extremely direct to be connected with the common port of two divider resistances, divider resistance one end ground connection, and a termination exports.
CN201420463220.3U 2014-08-18 2014-08-18 A kind of MOSFET pipe reverse-connection preventing circuit Expired - Fee Related CN204156524U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420463220.3U CN204156524U (en) 2014-08-18 2014-08-18 A kind of MOSFET pipe reverse-connection preventing circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420463220.3U CN204156524U (en) 2014-08-18 2014-08-18 A kind of MOSFET pipe reverse-connection preventing circuit

Publications (1)

Publication Number Publication Date
CN204156524U true CN204156524U (en) 2015-02-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201420463220.3U Expired - Fee Related CN204156524U (en) 2014-08-18 2014-08-18 A kind of MOSFET pipe reverse-connection preventing circuit

Country Status (1)

Country Link
CN (1) CN204156524U (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104821543A (en) * 2015-05-19 2015-08-05 中国兵器工业集团第二一四研究所苏州研发中心 Device with function of isolation DC/DC power supply input under-voltage or power-off protection
CN105711264A (en) * 2016-04-25 2016-06-29 杭州旗捷科技有限公司 Unilateral conduction circuit and power supply system
WO2018076794A1 (en) * 2016-10-25 2018-05-03 宁德时代新能源科技股份有限公司 Redundant backup control circuit of battery management system
CN116643199A (en) * 2023-05-23 2023-08-25 河南翔宇医疗设备股份有限公司 Judging circuit of direct-current power supply input voltage

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104821543A (en) * 2015-05-19 2015-08-05 中国兵器工业集团第二一四研究所苏州研发中心 Device with function of isolation DC/DC power supply input under-voltage or power-off protection
CN105711264A (en) * 2016-04-25 2016-06-29 杭州旗捷科技有限公司 Unilateral conduction circuit and power supply system
WO2018076794A1 (en) * 2016-10-25 2018-05-03 宁德时代新能源科技股份有限公司 Redundant backup control circuit of battery management system
CN116643199A (en) * 2023-05-23 2023-08-25 河南翔宇医疗设备股份有限公司 Judging circuit of direct-current power supply input voltage

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150211

Termination date: 20180818