CN203813431U - Current limiting protection circuit based on MOS tube grid voltage control - Google Patents
Current limiting protection circuit based on MOS tube grid voltage control Download PDFInfo
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- CN203813431U CN203813431U CN201420194215.7U CN201420194215U CN203813431U CN 203813431 U CN203813431 U CN 203813431U CN 201420194215 U CN201420194215 U CN 201420194215U CN 203813431 U CN203813431 U CN 203813431U
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Abstract
The utility model discloses a current limiting protection circuit based on MOS tube grid voltage control. The current limiting protection circuit comprises a current limiting MOS tube, wherein the drain and the source of the current limiting MOS tube are used as two connection terminals of the current limiting protection circuit. The current limiting protection circuit is characterized in that: a voltage sampling circuit is disposed between the two connection terminals of the current limiting protection circuit, and a first switch tube or/and a second switch tube are connected on the grid of the current limiting MOS tube; the grid power supply of the current limiting MOS tube is limited through applying a voltage on the grid of the first switch tube, when the first switch tube is connected; and the second switch tube is connected serially between the grid and drain of the current limiting MOS tube, and the grid power supply of the current limiting MOS tube is limited through applying a voltage on the grid of the second switch tube, when the second switch tube is connected. The current limiting protection circuit has beneficial effects of: being simple in circuit principle, being convenient to design, being easy to adjust element parameters according to different application occasions, being easy to integrate, and supporting modularization usage as two end current limiting devices.
Description
Technical field
The utility model relates to electronic circuit technology, specifically, is a kind of current-limiting protection circuit based on the control of metal-oxide-semiconductor grid voltage.
Background technology
Existing current-limiting protection circuit adopts protective tube conventionally, and thermometal protective tube and PPTC are from recovering insurance, and these several reaction speeds are slow, and the recovery certainly having, and be difficult to really play the effect of protective circuit and device.Although some current-limiting protection circuits can recover, circuit structure complexity, can not serve as an independently device use, and cost is high.
As shown in Figure 1; field effect transistor is usually used as switch element and current-limiting protection element because of the impedance transformation characteristic of himself; it shown in figure, is a typical protective circuit; Q1, Q2 are depletion field effect transistor; by Q1, the series connection of Q2 common source; along with the increase of circuit two ends electric current; electric current by Q1, Q2 will form grid voltage; once electric current exceedes predetermined threshold; grid voltage increase causes field effect transistor cut-off; make it in high-impedance state, thereby the load of protection series connection realize current-limiting protection.
Although sort circuit is simple in structure, can be used as independently device and use, due to the restriction of field effect transistor self-characteristic, two pipe voltage scenes that simply series connection adapts to are limited, and the input/output bound of circuit is narrower.
Utility model content
In order to overcome the deficiencies in the prior art; the purpose of this utility model is to propose a kind of current-limiting protection circuit based on the control of metal-oxide-semiconductor grid voltage; by the grid voltage of different mode control metal-oxide-semiconductors, thereby the resistance value of change metal-oxide-semiconductor reaches different current limliting super pressure control objects.
For achieving the above object, the concrete technical scheme that the utility model adopts is as follows:
A kind of current-limiting protection circuit based on the control of metal-oxide-semiconductor grid voltage, comprise a current limliting metal-oxide-semiconductor, the drain electrode of this current limliting metal-oxide-semiconductor and source electrode are respectively as two links of current-limiting protection circuit, it is characterized in that: between two links of described current-limiting protection circuit, be provided with voltage sample circuit, the grid of described current limliting metal-oxide-semiconductor obtains power supply from the first voltage sample circuit, is also connected with the first switching tube or/and second switch pipe on the grid of this current limliting metal-oxide-semiconductor;
In the time being connected with the first switching tube, described the first switching tube is serially connected in the grid supply line of this current limliting metal-oxide-semiconductor, the grid of this first switching tube obtains grid voltage from second voltage sample circuit, limits the grid power supply of described current limliting metal-oxide-semiconductor by the grid on-load voltage to the first switching tube;
In the time being connected with second switch pipe, described second switch pipe string is connected between the grid and source electrode of this current limliting metal-oxide-semiconductor, the grid of this second switch pipe obtains grid voltage from tertiary voltage sample circuit, limits the grid power supply of described current limliting metal-oxide-semiconductor by the grid on-load voltage to second switch pipe.
Based on above-mentioned design, the grid voltage of metal-oxide-semiconductor can be by the first switching tube or/and second switch management and control system, the first switching tube mainly adopts the mode of shutoff to stop power supply supply, second switch pipe mainly adopts the mode control of conducting draw power, by corresponding power supply sample circuit is set, can meet different voltage output ranges, thereby adapt to different application scenarioss, reach different current limliting super pressure control objects.
As further describing, described the first voltage sample circuit, second voltage sample circuit and tertiary voltage sample circuit all adopt one or more realizations that are connected in metal-oxide-semiconductor, resistive element, voltage stabilizing didoe and light-emitting diode, as long as can meet the sampling of relevant voltage.
As preferably, the grid voltage of described current limliting metal-oxide-semiconductor is subject to the first switch controlled, described the first voltage sample circuit comprises metal-oxide-semiconductor Q32 and resistance R 20, described second voltage sample circuit comprises metal-oxide-semiconductor Q30 and resistance R 18, the drain electrode of metal-oxide-semiconductor Q32 is connected to the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q32 is connected with the low level end of current-limiting protection circuit through resistance R 20, the high level end of resistance R 20 connects the source electrode of the first switching tube as the output of described the first voltage sample circuit, the drain electrode of metal-oxide-semiconductor Q30 is connected to the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q30 is connected with the high level end of resistance R 20 through resistance R 18, the high level end of described resistance R 18 is connected to as the output of second voltage sample circuit on the grid of described the first switching tube, the drain electrode of the first switching tube is connected with the grid of metal-oxide-semiconductor Q26, this metal-oxide-semiconductor Q26 is as described current limliting metal-oxide-semiconductor, between the grid of metal-oxide-semiconductor Q26 and source electrode, be also provided with resistance R 19.
As preferably, the grid voltage of described current limliting metal-oxide-semiconductor is subject to the first switch controlled, described the first voltage sample circuit comprises metal-oxide-semiconductor Q10, resistance R 1 and voltage stabilizing didoe D3, the drain electrode of metal-oxide-semiconductor Q10 is connected with the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q10 is connected to the negative pole end of voltage stabilizing didoe D3 through resistance R 1, the low level end of the anodal termination current-limiting protection circuit of voltage stabilizing didoe D3, the negative pole end of voltage stabilizing didoe D3 is as the output of the first voltage sample circuit, simultaneously, metal-oxide-semiconductor Q10, resistance R 1 and voltage stabilizing didoe D3 also form described second voltage sample circuit, the high level end of resistance R 1 is as the output of second voltage sample circuit, metal-oxide-semiconductor Q7 is as described current limliting metal-oxide-semiconductor, between the grid of metal-oxide-semiconductor Q7 and source electrode, be also provided with resistance R 5.
As preferably, the grid voltage of described current limliting metal-oxide-semiconductor is subject to second switch management and control system, described the first voltage sample circuit comprises metal-oxide-semiconductor Q16, resistance R 15 and voltage stabilizing didoe D10, the drain electrode of metal-oxide-semiconductor Q16 is connected with the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q16 is connected to the negative pole end of voltage stabilizing didoe D10 through resistance R 15, the low level end of the anodal termination current-limiting protection circuit of voltage stabilizing didoe D10, the negative pole end of voltage stabilizing didoe D10 is as the output of the first voltage sample circuit, described tertiary voltage sample circuit comprises metal-oxide-semiconductor Q18, resistance R 13, voltage stabilizing didoe D12 and resistance R 11, the drain electrode of metal-oxide-semiconductor Q18 is connected with the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q18 is connected with the negative pole end of voltage stabilizing didoe D12 through resistance R 13, the positive terminal of voltage stabilizing didoe D12 is connected with one end of resistance R 11, the low level end of another termination current-limiting protection circuit of resistance R 11, the high level end of resistance R 11 is connected with the grid of metal-oxide-semiconductor Q34 as the output of described tertiary voltage sample circuit, metal-oxide-semiconductor Q34 is connected between the grid and source electrode of described current limliting metal-oxide-semiconductor as described second switch pipe.
As preferably, the grid voltage of described current limliting metal-oxide-semiconductor is subject to the first switching tube and second switch management and control system simultaneously, described the first voltage sample circuit comprises metal-oxide-semiconductor Q17, resistance R 6, voltage stabilizing didoe D2 and resistance R 3, the drain electrode of metal-oxide-semiconductor Q17 connects the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q17 is connected with the negative pole of voltage stabilizing didoe D2 through resistance R 6, the positive pole of voltage stabilizing didoe D2 is connected with the low level end of current-limiting protection circuit through resistance R 3, the negative pole end of voltage stabilizing didoe D2 is connected with the source electrode of JEFT pipe Q19 as the output of described the first voltage sample circuit, this JEFT pipe Q19 is as described the first switching tube, the drain electrode of JEFT pipe Q19 connects the grid of current limliting metal-oxide-semiconductor, metal-oxide-semiconductor Q17, resistance R 6, voltage stabilizing didoe D2 and resistance R 3 also form second voltage sample circuit, the high level end of resistance R 6 is connected to as the output of described second voltage sample circuit on the grid of JEFT pipe Q19, metal-oxide-semiconductor Q17, resistance R 6, voltage stabilizing didoe D2 and resistance R 3 also form tertiary voltage sample circuit, the high level end of resistance R 3 is connected to as the output of described tertiary voltage sample circuit on the grid of metal-oxide-semiconductor Q20, metal-oxide-semiconductor Q20 is connected between the grid and source electrode of current limliting metal-oxide-semiconductor as described second switch pipe.
Conventionally, described the first switching tube is JEFT pipe or depletion type MOS tube, and described second switch pipe is enhancement mode metal-oxide-semiconductor.
Remarkable result of the present utility model is: circuit theory is simple, and design is convenient, according to different application scenarioss, is easy to adjust component parameters, and circuit is easy to integratedly, uses as two ends current limiting device modularization.
Brief description of the drawings
Fig. 1 is current-limiting protection circuit of the prior art;
Fig. 2 is circuit topology figure of the present utility model;
Fig. 3 is the circuit theory diagrams of specific embodiment 1;
Fig. 4 is the circuit theory diagrams of specific embodiment 2;
Fig. 5 is the circuit theory diagrams of specific embodiment 3;
Fig. 6 is the circuit theory diagrams of specific embodiment 4;
Fig. 7 is the circuit theory diagrams of specific embodiment 5.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model and operation principle are described in further detail.
As shown in Figure 2, a kind of current-limiting protection circuit based on the control of metal-oxide-semiconductor grid voltage, comprise a current limliting metal-oxide-semiconductor, the drain electrode of this current limliting metal-oxide-semiconductor and source electrode are respectively as two links of current-limiting protection circuit, in figure, be labeled as respectively "+" end and "-" end, between two links of described current-limiting protection circuit, be provided with voltage sample circuit, the grid of current limliting metal-oxide-semiconductor obtains power supply from the first voltage sample circuit, is also connected with the first switching tube or/and second switch pipe on the grid of this current limliting metal-oxide-semiconductor;
In the time being connected with the first switching tube, described the first switching tube is serially connected in the grid supply line of this current limliting metal-oxide-semiconductor, the grid of this first switching tube obtains grid voltage from second voltage sample circuit, limits the grid power supply of described current limliting metal-oxide-semiconductor by the grid on-load voltage to the first switching tube;
In the time being connected with second switch pipe, described second switch pipe string is connected between the grid and source electrode of this current limliting metal-oxide-semiconductor, the grid of this second switch pipe obtains grid voltage from tertiary voltage sample circuit, limits the grid power supply of described current limliting metal-oxide-semiconductor by the grid on-load voltage to second switch pipe.
In implementation process, described the first voltage sample circuit, second voltage sample circuit and tertiary voltage sample circuit all adopt one or more realizations that are connected in metal-oxide-semiconductor, resistive element, voltage stabilizing didoe and light-emitting diode.
Embodiment 1:
As shown in Figure 3, Q26 is as current limliting metal-oxide-semiconductor, its grid voltage is controlled by the first switching tube Q31, the first voltage sample circuit comprises metal-oxide-semiconductor Q32 and resistance R 20, second voltage sample circuit comprises metal-oxide-semiconductor Q30 and resistance R 18, the drain electrode of metal-oxide-semiconductor Q32 is connected to the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q32 is connected with the low level end of current-limiting protection circuit through resistance R 20, the grid of metal-oxide-semiconductor Q32 is connected to the low level end of resistance R 20, the high level end of resistance R 20 connects the source electrode of the first switching tube as the output of described the first voltage sample circuit, the drain electrode of metal-oxide-semiconductor Q30 is connected to the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q30 is connected with the high level end of resistance R 20 through resistance R 18, the high level end of described resistance R 18 is connected to as the output of second voltage sample circuit on the grid of described the first switching tube, the drain electrode of the first switching tube is connected with the grid of metal-oxide-semiconductor Q26, between the grid of metal-oxide-semiconductor Q26 and source electrode, be also provided with resistance R 19.
In this example, utilize Q26 as current limliting metal-oxide-semiconductor; Q31 is as the first switching tube; by the resistance of adjusting resistance R18 and resistance R 20; can set the shutoff voltage of the first switching tube Q31; in the time that current-limiting protection circuit both end voltage exceedes default voltage range, the first switching tube Q31 turn-offs, thereby has stoped the grid power supply supply of Q26; improve the resistance value of Q26, reach the object of current-limiting protection.
Embodiment 2:
As shown in Figure 4, the difference of the present embodiment and embodiment 1 is in voltage sample circuit, resistance R 20 can utilize voltage stabilizing didoe or light-emitting diode to replace, also can select Various Components combination, in second voltage sample circuit, can also set up voltage stabilizing didoe and resistance, D26 as shown in FIG. and R42, and metal-oxide-semiconductor in voltage sample circuit can select different positions as grid voltage sampled point, as selected R18 low level end in Fig. 3, in Fig. 4, select the low level end of R42, in a word, voltage sample circuit reaches the voltage sampling of respective standard.
Embodiment 3:
As shown in Figure 5, Q7 is as current limliting metal-oxide-semiconductor, its grid voltage is controlled by the first switching tube Q2 also, the first voltage sample circuit comprises metal-oxide-semiconductor Q10, resistance R 1 and voltage stabilizing didoe D3, the drain electrode of metal-oxide-semiconductor Q10 is connected with the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q10 is connected to the negative pole end of voltage stabilizing didoe D3 through resistance R 1, the low level end of the anodal termination current-limiting protection circuit of voltage stabilizing didoe D3, the negative pole end of voltage stabilizing didoe D3 is as the output of the first voltage sample circuit, simultaneously, metal-oxide-semiconductor Q10, resistance R 1 and voltage stabilizing didoe D3 also form described second voltage sample circuit, the high level end of resistance R 1 is as the output of second voltage sample circuit, metal-oxide-semiconductor Q7 is as described current limliting metal-oxide-semiconductor, between the grid of metal-oxide-semiconductor Q7 and source electrode, be also provided with resistance R 5.
The difference of the present embodiment and embodiment 1 is the execution mode of the first voltage sample circuit and second voltage sample circuit, in this example, form a road bleeder circuit by Q10, R1 and D3, by selecting different dividing points to export different magnitudes of voltage, thereby as different sample circuits.
Embodiment 4:
As shown in Figure 6, Q15 is as current limliting metal-oxide-semiconductor, its grid voltage is controlled by second switch pipe Q34, the first voltage sample circuit comprises metal-oxide-semiconductor Q16, resistance R 15 and voltage stabilizing didoe D10, the drain electrode of metal-oxide-semiconductor Q16 is connected with the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q16 is connected to the negative pole end of voltage stabilizing didoe D10 through resistance R 15, the low level end of the anodal termination current-limiting protection circuit of voltage stabilizing didoe D10, the negative pole end of voltage stabilizing didoe D10 is as the output of the first voltage sample circuit, tertiary voltage sample circuit comprises metal-oxide-semiconductor Q18, resistance R 13, voltage stabilizing didoe D12 and resistance R 11, the drain electrode of metal-oxide-semiconductor Q18 is connected with the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q18 is connected with the negative pole end of voltage stabilizing didoe D12 through resistance R 13, the positive terminal of voltage stabilizing didoe D12 is connected with one end of resistance R 11, the low level end of another termination current-limiting protection circuit of resistance R 11, the high level end of resistance R 11 is connected with the grid of metal-oxide-semiconductor Q34 as the output of described tertiary voltage sample circuit, metal-oxide-semiconductor Q34 is connected between the grid and source electrode of described current limliting metal-oxide-semiconductor as described second switch pipe.
In this example, control the grid voltage of current limliting metal-oxide-semiconductor Q15 by second switch pipe Q34; in the time that current-limiting protection circuit both end voltage is too high; the obtained voltage of tertiary voltage sample circuit is enough to control second switch pipe Q34 conducting; thereby reduce the grid voltage of current limliting metal-oxide-semiconductor Q15; the control electric current between Q15 drain electrode and source electrode of flowing through, reaches the object of current limliting.
Embodiment 5:
As shown in Figure 7, Q5 is as current limliting metal-oxide-semiconductor, its grid voltage is subject to the first switching tube and second switch management and control system simultaneously, described the first voltage sample circuit comprises metal-oxide-semiconductor Q17, resistance R 6, voltage stabilizing didoe D2 and resistance R 3, the drain electrode of metal-oxide-semiconductor Q17 connects the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q17 is connected with the negative pole of voltage stabilizing didoe D2 through resistance R 6, the positive pole of voltage stabilizing didoe D2 is connected with the low level end of current-limiting protection circuit through resistance R 3, the negative pole end of voltage stabilizing didoe D2 is connected with the source electrode of JEFT pipe Q19 as the output of described the first voltage sample circuit, this JEFT pipe Q19 is as described the first switching tube, the drain electrode of JEFT pipe Q19 connects the grid of current limliting metal-oxide-semiconductor, metal-oxide-semiconductor Q17, resistance R 6, voltage stabilizing didoe D2 and resistance R 3 also form second voltage sample circuit, the high level end of resistance R 6 is connected to as the output of described second voltage sample circuit on the grid of JEFT pipe Q19, metal-oxide-semiconductor Q17, resistance R 6, voltage stabilizing didoe D2 and resistance R 3 also form tertiary voltage sample circuit, the high level end of resistance R 3 is connected to as the output of described tertiary voltage sample circuit on the grid of metal-oxide-semiconductor Q20, metal-oxide-semiconductor Q20 is connected between the grid and source electrode of current limliting metal-oxide-semiconductor as described second switch pipe.
In this example, adopt the first switching tube and second switch pipe simultaneously, by configuring rational circuit parameter, allow the dual control of Q19 and Q20, reach the object of current-limiting protection.
In the above-described embodiments, described the first switching tube is JEFT pipe or depletion type MOS tube, and described second switch pipe is enhancement mode metal-oxide-semiconductor.
Finally it should be noted that; foregoing description is only preferred embodiment of the present utility model; those of ordinary skill in the art is under enlightenment of the present utility model; under the prerequisite without prejudice to the utility model aim and claim; can make like multiple types and representing, within such conversion all falls into protection range of the present utility model.
Claims (7)
1. the current-limiting protection circuit based on the control of metal-oxide-semiconductor grid voltage, comprise a current limliting metal-oxide-semiconductor, the drain electrode of this current limliting metal-oxide-semiconductor and source electrode are respectively as two links of current-limiting protection circuit, it is characterized in that: between two links of described current-limiting protection circuit, be provided with voltage sample circuit, the grid of described current limliting metal-oxide-semiconductor obtains power supply from the first voltage sample circuit, is also connected with the first switching tube or/and second switch pipe on the grid of this current limliting metal-oxide-semiconductor;
In the time being connected with the first switching tube, described the first switching tube is serially connected in the grid supply line of this current limliting metal-oxide-semiconductor, the grid of this first switching tube obtains grid voltage from second voltage sample circuit, limits the grid power supply of described current limliting metal-oxide-semiconductor by the grid on-load voltage to the first switching tube;
In the time being connected with second switch pipe, described second switch pipe string is connected between the grid and source electrode of this current limliting metal-oxide-semiconductor, the grid of this second switch pipe obtains grid voltage from tertiary voltage sample circuit, limits the grid power supply of described current limliting metal-oxide-semiconductor by the grid on-load voltage to second switch pipe.
2. the current-limiting protection circuit based on the control of metal-oxide-semiconductor grid voltage according to claim 1, is characterized in that: described the first voltage sample circuit, second voltage sample circuit and tertiary voltage sample circuit all adopt one or more realizations that are connected in metal-oxide-semiconductor, resistive element, voltage stabilizing didoe and light-emitting diode.
3. the current-limiting protection circuit based on the control of metal-oxide-semiconductor grid voltage according to claim 1, it is characterized in that: the grid voltage of described current limliting metal-oxide-semiconductor is subject to the first switch controlled, described the first voltage sample circuit comprises metal-oxide-semiconductor Q32 and resistance R 20, described second voltage sample circuit comprises metal-oxide-semiconductor Q30 and resistance R 18, the drain electrode of metal-oxide-semiconductor Q32 is connected to the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q32 is connected with the low level end of current-limiting protection circuit through resistance R 20, the high level end of resistance R 20 connects the source electrode of the first switching tube as the output of described the first voltage sample circuit, the drain electrode of metal-oxide-semiconductor Q30 is connected to the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q30 is connected with the high level end of resistance R 20 through resistance R 18, the high level end of described resistance R 18 is connected to as the output of second voltage sample circuit on the grid of described the first switching tube, the drain electrode of the first switching tube is connected with the grid of metal-oxide-semiconductor Q26, this metal-oxide-semiconductor Q26 is as described current limliting metal-oxide-semiconductor, between the grid of metal-oxide-semiconductor Q26 and source electrode, be also provided with resistance R 19.
4. the current-limiting protection circuit based on the control of metal-oxide-semiconductor grid voltage according to claim 1, it is characterized in that: the grid voltage of described current limliting metal-oxide-semiconductor is subject to the first switch controlled, described the first voltage sample circuit comprises metal-oxide-semiconductor Q10, resistance R 1 and voltage stabilizing didoe D3, the drain electrode of metal-oxide-semiconductor Q10 is connected with the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q10 is connected to the negative pole end of voltage stabilizing didoe D3 through resistance R 1, the low level end of the anodal termination current-limiting protection circuit of voltage stabilizing didoe D3, the negative pole end of voltage stabilizing didoe D3 is as the output of the first voltage sample circuit, simultaneously, metal-oxide-semiconductor Q10, resistance R 1 and voltage stabilizing didoe D3 also form described second voltage sample circuit, the high level end of resistance R 1 is as the output of second voltage sample circuit, metal-oxide-semiconductor Q7 is as described current limliting metal-oxide-semiconductor, between the grid of metal-oxide-semiconductor Q7 and source electrode, be also provided with resistance R 5.
5. the current-limiting protection circuit based on the control of metal-oxide-semiconductor grid voltage according to claim 1, it is characterized in that: the grid voltage of described current limliting metal-oxide-semiconductor is subject to second switch management and control system, described the first voltage sample circuit comprises metal-oxide-semiconductor Q16, resistance R 15 and voltage stabilizing didoe D10, the drain electrode of metal-oxide-semiconductor Q16 is connected with the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q16 is connected to the negative pole end of voltage stabilizing didoe D10 through resistance R 15, the low level end of the anodal termination current-limiting protection circuit of voltage stabilizing didoe D10, the negative pole end of voltage stabilizing didoe D10 is as the output of the first voltage sample circuit, described tertiary voltage sample circuit comprises metal-oxide-semiconductor Q18, resistance R 13, voltage stabilizing didoe D12 and resistance R 11, the drain electrode of metal-oxide-semiconductor Q18 is connected with the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q18 is connected with the negative pole end of voltage stabilizing didoe D12 through resistance R 13, the positive terminal of voltage stabilizing didoe D12 is connected with one end of resistance R 11, the low level end of another termination current-limiting protection circuit of resistance R 11, the high level end of resistance R 11 is connected with the grid of metal-oxide-semiconductor Q34 as the output of described tertiary voltage sample circuit, metal-oxide-semiconductor Q34 is connected between the grid and source electrode of described current limliting metal-oxide-semiconductor as described second switch pipe.
6. the current-limiting protection circuit based on the control of metal-oxide-semiconductor grid voltage according to claim 1, it is characterized in that: the grid voltage of described current limliting metal-oxide-semiconductor is subject to the first switching tube and second switch management and control system simultaneously, described the first voltage sample circuit comprises metal-oxide-semiconductor Q17, resistance R 6, voltage stabilizing didoe D2 and resistance R 3, the drain electrode of metal-oxide-semiconductor Q17 connects the high level end of current-limiting protection circuit, the source electrode of metal-oxide-semiconductor Q17 is connected with the negative pole of voltage stabilizing didoe D2 through resistance R 6, the positive pole of voltage stabilizing didoe D2 is connected with the low level end of current-limiting protection circuit through resistance R 3, the negative pole end of voltage stabilizing didoe D2 is connected with the source electrode of JEFT pipe Q19 as the output of described the first voltage sample circuit, this JEFT pipe Q19 is as described the first switching tube, the drain electrode of JEFT pipe Q19 connects the grid of current limliting metal-oxide-semiconductor, metal-oxide-semiconductor Q17, resistance R 6, voltage stabilizing didoe D2 and resistance R 3 also form second voltage sample circuit, the high level end of resistance R 6 is connected to as the output of described second voltage sample circuit on the grid of JEFT pipe Q19, metal-oxide-semiconductor Q17, resistance R 6, voltage stabilizing didoe D2 and resistance R 3 also form tertiary voltage sample circuit, the high level end of resistance R 3 is connected to as the output of described tertiary voltage sample circuit on the grid of metal-oxide-semiconductor Q20, metal-oxide-semiconductor Q20 is connected between the grid and source electrode of current limliting metal-oxide-semiconductor as described second switch pipe.
7. the current-limiting protection circuit based on the control of metal-oxide-semiconductor grid voltage according to claim 1 and 2, is characterized in that: described the first switching tube is JEFT pipe or depletion type MOS tube, and described second switch pipe is enhancement mode metal-oxide-semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420194215.7U CN203813431U (en) | 2014-04-21 | 2014-04-21 | Current limiting protection circuit based on MOS tube grid voltage control |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420194215.7U CN203813431U (en) | 2014-04-21 | 2014-04-21 | Current limiting protection circuit based on MOS tube grid voltage control |
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| CN203813431U true CN203813431U (en) | 2014-09-03 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107425832A (en) * | 2017-09-15 | 2017-12-01 | 启攀微电子（上海）有限公司 | It is a kind of can two-way admittance current limliting load switch |
| CN107863749A (en) * | 2017-10-26 | 2018-03-30 | 中国电子科技集团公司第三十八研究所 | A kind of cathode modulator quick current-limiting protection circuit |
-
2014
- 2014-04-21 CN CN201420194215.7U patent/CN203813431U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107425832A (en) * | 2017-09-15 | 2017-12-01 | 启攀微电子（上海）有限公司 | It is a kind of can two-way admittance current limliting load switch |
| CN107425832B (en) * | 2017-09-15 | 2023-10-13 | 启攀微电子（上海）有限公司 | Load switch capable of conducting current limiting bidirectionally |
| CN107863749A (en) * | 2017-10-26 | 2018-03-30 | 中国电子科技集团公司第三十八研究所 | A kind of cathode modulator quick current-limiting protection circuit |
| CN107863749B (en) * | 2017-10-26 | 2019-07-05 | 中国电子科技集团公司第三十八研究所 | A kind of cathode modulator quick current-limiting protection circuit |
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| CF01 | Termination of patent right due to non-payment of annual fee |
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