CN204858959U - Output current foldback circuit - Google Patents

Output current foldback circuit Download PDF

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Publication number
CN204858959U
CN204858959U CN201520596049.8U CN201520596049U CN204858959U CN 204858959 U CN204858959 U CN 204858959U CN 201520596049 U CN201520596049 U CN 201520596049U CN 204858959 U CN204858959 U CN 204858959U
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CN
China
Prior art keywords
boosting
vcc
port
model
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201520596049.8U
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Chinese (zh)
Inventor
周建森
刘慧阳
蒋江林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongguan Lianzhou Electronic Technology Co Ltd
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Dongguan Lianzhou Electronic Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Priority to CN201520596049.8U priority Critical patent/CN204858959U/en
Application granted granted Critical
Publication of CN204858959U publication Critical patent/CN204858959U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The utility model belongs to the technical field of the protection circuit, especially, relate to an output current foldback circuit, include the IC that steps up from the DC -DC who takes the current -limiting function, DC -DC steps up IC's EN port to be passed through fourth resistance R4 and connects VCC_IO, and DC -DC steps up IC's EN port and still through the 5th resistance R5 ground connection, is provided with the MOS pipe between VCC and the VCC_OTG, and the grid of MOS pipe is connected with OTG_DRV, and VCC passes through the 6th resistance R6 and is connected with OTG_DRV. Compared with the prior art, the utility model discloses use the model as VS1611's the DC -DC IC that steps up to replace the model for SY7208's the DC -DC IC that steps up, because it can control the electric current of the 5V voltage of output from taking the current -limiting function, and simultaneously, the utility model discloses still use the model to replace SY6280, MOS control oil pipe VCC_5V and VCC_OTG's break -make as VS3401's MOS pipe. Because the cost of MOS pipe, consequently can reduce the cost of this protection circuit far below SY6280.

Description

A kind of output overcurrent protective circuit
Technical field
The utility model belongs to protective circuit technical field, particularly relates to a kind of output overcurrent protective circuit.
Background technology
In order to ensure the output safety of USB, USB generally will connect output overcurrent protective circuit, and as depicted in figs. 1 and 2, it controls output current by USB overcurrent protection chip SY6280 to the most frequently used form of existing USB output circuit protective circuit.Because USB overcurrent protection chip SY6280 cost is higher, therefore just cause the cost of whole current foldback circuit higher.
In view of this, necessaryly provide a kind of output overcurrent protective circuit, it uses the DC-DC of band current limiting function to boost IC; just can control the electric current of the 5V voltage exported; now, just do not need the current-limiting protection of SY6280, and only need the path meeting metal-oxide-semiconductor control 5V a to VCCOTG.
Utility model content
The purpose of this utility model is: for the deficiencies in the prior art; and a kind of output overcurrent protective circuit is provided; it uses the DC-DC boosting IC of band current limiting function; just can control the electric current of the 5V voltage exported; now; just do not need the current-limiting protection of SY6280, and only need the path meeting metal-oxide-semiconductor control 5V a to VCCOTG.
In order to achieve the above object, the utility model adopts following technical scheme:
A kind of output overcurrent protective circuit, comprise the DC-DC boosting IC carrying current-limiting function, inductance L 1 is connected with between the VIN port of described DC-DC boosting IC and LX port, the VIN port of described DC-DC boosting IC is also connected rear ground connection with the first electric capacity C1, the LX port of described DC-DC boosting IC is also connected by the first diode D1 and VCC, the LX port of described DC-DC boosting IC is also respectively by the second electric capacity C2 and the 3rd electric capacity C3 ground connection, the LX port of described DC-DC boosting IC is also successively by the 4th electric capacity C4 and the first resistance R1 ground connection, the second resistance R2 is also provided with between the FB port of described first diode D1 and described DC-DC boosting IC, ground connection after NC port connection the 3rd resistance R3 of described DC-DC boosting IC, the GND port ground connection of described DC-DC boosting IC, the EN port of described DC-DC boosting IC connects VCC_IO by the 4th resistance R4, the EN port of described DC-DC boosting IC is also by the 5th resistance R5 ground connection, metal-oxide-semiconductor is provided with between VCC and VCC_OTG, the grid of metal-oxide-semiconductor is connected with OTG_DRV, VCC is connected by the 6th resistance R6 and OTG_DRV.
One as the utility model output overcurrent protective circuit is improved, and the model of described DC-DC boosting IC is VS1661.
One as the utility model output overcurrent protective circuit is improved, and the model of described metal-oxide-semiconductor is VS3401.
One as the utility model output overcurrent protective circuit is improved, and the VIN port of described DC-DC boosting IC is also connected with VSYS.
Relative to prior art, the utility model uses the DC-DC boosting IC of band current-limiting function; The 5V voltage of such output inherently current limiting, now, does not just need the current-limiting protection of SY6280; As long as install the path of metal-oxide-semiconductor control 5V a to VCC_OTG.Concrete, the utility model uses the DC-DC boosting IC that model is VS1611, to replace the DC-DC boosting IC that model is SY7208, because it carries current-limiting function, can control the electric current of the 5V voltage exported; Meanwhile, the utility model also replaces SY6280, the break-make of metal-oxide-semiconductor control VCC_5V and VCC_OTG with the metal-oxide-semiconductor that model is VS3401.Because the cost of metal-oxide-semiconductor is far below SY6280, the cost of this protective circuit therefore can be reduced.
Accompanying drawing explanation
Fig. 1 is the electrical block diagram between VSYS and VCC of output overcurrent protective circuit in prior art.
Fig. 2 is the electrical block diagram between VCC and VCC_OTG of output overcurrent protective circuit in prior art.
Fig. 3 is the electrical block diagram between VSYS and VCC of output overcurrent protective circuit in the utility model.
Fig. 4 is the electrical block diagram between VCC and VCC_OTG of output overcurrent protective circuit in the utility model.
Embodiment
As shown in Figures 3 and 4, a kind of output overcurrent protective circuit that the utility model provides, comprise the DC-DC boosting IC carrying current-limiting function, inductance L 1 is connected with between the VIN port of DC-DC boosting IC and LX port, the VIN port of DC-DC boosting IC is also connected rear ground connection with the first electric capacity C1, the LX port of DC-DC boosting IC is also connected by the first diode D1 and VCC, the LX port of DC-DC boosting IC is also respectively by the second electric capacity C2 and the 3rd electric capacity C3 ground connection, the LX port of DC-DC boosting IC is also successively by the 4th electric capacity C4 and the first resistance R1 ground connection, the second resistance R2 is also provided with between the FB port of the first diode D1 and DC-DC boosting IC, ground connection after NC port connection the 3rd resistance R3 of DC-DC boosting IC, the GND port ground connection of DC-DC boosting IC, the EN port of DC-DC boosting IC connects VCC_IO by the 4th resistance R4, the EN port of DC-DC boosting IC is also by the 5th resistance R5 ground connection, metal-oxide-semiconductor is provided with between VCC and VCC_OTG, the grid of metal-oxide-semiconductor is connected with OTG_DRV, VCC is connected by the 6th resistance R6 and OTG_DRV.
Wherein, the model of DC-DC boosting IC is VS1661, and the input range of the boosting integrated circuit of this model is 3V ~ 25V, and output voltage is up to 25V; Synchronous rectification does not need additional Schottky diode, and chip perimeter device is less, can save certain cost in design, and chip efficiency when being fully loaded with can reach about 96%.
The model of metal-oxide-semiconductor is VS3401.Metal-oxide-semiconductor is the electric current being carried out control output end drain electrode by the voltage being added in input grid.Metal-oxide-semiconductor is by being added in the characteristic of the voltage control device on grid, the charge-storage effect caused because of base current when making switch as triode can not be there is, therefore in switch application, the switching speed of metal-oxide-semiconductor is faster than triode, and it can the break-make of control VCC_5V and VCC_OTG.
The VIN port of DC-DC boosting IC is also connected with VSYS.
In a word, the utility model uses the DC-DC boosting IC of band current-limiting function; The 5V voltage of such output inherently current limiting, now, does not just need the current-limiting protection of SY6280; As long as install the path of metal-oxide-semiconductor control 5V a to VCC_OTG.Concrete, the utility model uses the DC-DC boosting IC that model is VS1611, to replace the DC-DC boosting IC that model is SY7208, because it carries current-limiting function, can control the electric current of the 5V voltage exported; Meanwhile, the utility model also replaces SY6280, the break-make of metal-oxide-semiconductor control VCC_5V and VCC_OTG with the metal-oxide-semiconductor that model is VS3401.Because the cost of metal-oxide-semiconductor is far below SY6280, the cost of this protective circuit therefore can be reduced.
The announcement of book and instruction according to the above description, the utility model those skilled in the art can also carry out suitable change and amendment to above-mentioned execution mode.Therefore, the utility model is not limited to embodiment disclosed and described above, also should fall in the protection range of claim of the present utility model modifications and changes more of the present utility model.In addition, although employ some specific terms in this specification, these terms just for convenience of description, do not form any restriction to the utility model.

Claims (4)

1. an output overcurrent protective circuit, it is characterized in that: comprise the DC-DC boosting IC carrying current-limiting function, inductance L 1 is connected with between the VIN port of described DC-DC boosting IC and LX port, the VIN port of described DC-DC boosting IC is also connected rear ground connection with the first electric capacity C1, the LX port of described DC-DC boosting IC is also connected by the first diode D1 and VCC, the LX port of described DC-DC boosting IC is also respectively by the second electric capacity C2 and the 3rd electric capacity C3 ground connection, the LX port of described DC-DC boosting IC is also successively by the 4th electric capacity C4 and the first resistance R1 ground connection, the second resistance R2 is also provided with between the FB port of described first diode D1 and described DC-DC boosting IC, ground connection after NC port connection the 3rd resistance R3 of described DC-DC boosting IC, the GND port ground connection of described DC-DC boosting IC, the EN port of described DC-DC boosting IC connects VCC_IO by the 4th resistance R4, the EN port of described DC-DC boosting IC is also by the 5th resistance R5 ground connection, metal-oxide-semiconductor is provided with between VCC and VCC_OTG, the grid of metal-oxide-semiconductor is connected with OTG_DRV, VCC is connected by the 6th resistance R6 and OTG_DRV.
2. output overcurrent protective circuit according to claim 1, is characterized in that: the model of described DC-DC boosting IC is VS1661.
3. output overcurrent protective circuit according to claim 1, is characterized in that: the model of described metal-oxide-semiconductor is VS3401.
4. output overcurrent protective circuit according to claim 1, is characterized in that: the VIN port of described DC-DC boosting IC is also connected with VSYS.
CN201520596049.8U 2015-08-10 2015-08-10 Output current foldback circuit Expired - Fee Related CN204858959U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520596049.8U CN204858959U (en) 2015-08-10 2015-08-10 Output current foldback circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520596049.8U CN204858959U (en) 2015-08-10 2015-08-10 Output current foldback circuit

Publications (1)

Publication Number Publication Date
CN204858959U true CN204858959U (en) 2015-12-09

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Application Number Title Priority Date Filing Date
CN201520596049.8U Expired - Fee Related CN204858959U (en) 2015-08-10 2015-08-10 Output current foldback circuit

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106710559A (en) * 2017-02-28 2017-05-24 深圳市亿道数码技术有限公司 Voltage protecting circuit of liquid crystal screen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106710559A (en) * 2017-02-28 2017-05-24 深圳市亿道数码技术有限公司 Voltage protecting circuit of liquid crystal screen

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20151209

Termination date: 20190810