CN205081465U - Anti -surge circuit - Google Patents
Anti -surge circuit Download PDFInfo
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- CN205081465U CN205081465U CN201520873707.3U CN201520873707U CN205081465U CN 205081465 U CN205081465 U CN 205081465U CN 201520873707 U CN201520873707 U CN 201520873707U CN 205081465 U CN205081465 U CN 205081465U
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Abstract
The utility model discloses an anti -surge circuit, pile BD1 and fuse F1, its characterized in that including high -power resistance R1, MOS pipe Q1, resistance R2, resistance R3, resistance R4, stabilivolt ZD1, electric capacity C1, electrolytic capacitor EC1, electric capacity C3, electric capacity C2, bridge electric capacity C1's a termination electrolytic capacitor EC1's positive pole, resistance R4's one end and the positive pole that BD1 is piled to the bridge, electric capacity C1's the other end, electrolytic capacitor EC1's negative pole, MOS pipe Q1's drain electrode and resistance R1's one end ground connection, BD1's negative pole is piled to another termination bridge of resistance R1, MOS pipe Q1 source electrode, electric capacity C2's one end, stabilivolt ZD1's positive pole, electric capacity C3's one end and resistance R3's one end, another termination MOS pipe Q1's of electric capacity C2 grid, stabilivolt ZD1's negative pole and resistance R2's one end, another termination resistance R4 of resistance R2, resistance R3 and electric capacity C3's the other end. The utility model discloses in fast switch machine and heat engine switching on and shutting down, the same can both the obtaining of surge current is restrained, reduces the impact of electronic product to the electric wire netting.
Description
Technical field
The utility model relates to circuit field, specifically a kind of anti-surge circuit.
Background technology
The NTC surge current suppression circuit of frequent use is simply widely used due to it, and its circuit structure as shown in Figure 1, but makes effect in many applications undesirable due to its power consumption and the effect of heat engine unrestraint surge.Along with present electronic product is more and more higher to surge current requirements, the circuit of this structure can not meet the demands.
Summary of the invention
The problems referred to above being prior art and existing to be solved in the utility model, aim to provide a kind of follow-on anti-surge circuit, more effectively can either reduce surge current, greatly reduce the impact to electrical network, simultaneously low in energy consumption, and the effect of heat engine unrestraint surge can not be produced.
For solving the problem, the utility model is by the following technical solutions: a kind of anti-surge circuit, comprise high-power resistance R1, metal-oxide-semiconductor Q1, resistance R2, resistance R3, resistance R4, voltage-stabiliser tube ZD1, electric capacity C1, electrochemical capacitor EC1, electric capacity C3, electric capacity C2, bridge heap BD1 and fuse F1, it is characterized in that the positive pole of a termination electrochemical capacitor EC1 of described electric capacity C1, the positive pole of one end of resistance R4 and bridge heap BD1, the other end of electric capacity C1, the negative pole of electrochemical capacitor EC1, the drain electrode of metal-oxide-semiconductor Q1 and one end ground connection of resistance R1, the negative pole of another termination bridge heap BD1 of resistance R1, metal-oxide-semiconductor Q1 source electrode, one end of electric capacity C2, the anode of voltage-stabiliser tube ZD1, one end of electric capacity C3 and one end of resistance R3, the grid of another termination metal-oxide-semiconductor Q1 of electric capacity C2, the negative electrode of voltage-stabiliser tube ZD1 and one end of resistance R2, the other end connecting resistance R4 of resistance R2, the other end of resistance R3 and electric capacity C3.
A kind of anti-surge circuit of the present utility model, when startup, because on electrochemical capacitor EC1 and electric capacity C1, voltage is 0, metal-oxide-semiconductor Q1 turns off, input voltage is charged to electrochemical capacitor EC1 and electric capacity C1 by high-power resistance R1, so electric current is determined by resistance R1, resistance R1 resistance is larger, surge current is less, when the voltage on electrochemical capacitor EC1 reaches some values, when metal-oxide-semiconductor Q1 grid voltage reaches the threshold voltage of metal-oxide-semiconductor, metal-oxide-semiconductor Q1 opens, short-circuit resistance R1, startup completes, after metal-oxide-semiconductor Q1 conducting, between the DS of metal-oxide-semiconductor Q1, voltage is very little, loss is very low.Electric capacity C2, electric capacity C3 can be used for regulating the rise time of metal-oxide-semiconductor Q1 grid voltage, control the service time of metal-oxide-semiconductor Q1, and voltage-stabiliser tube ZD1 can be used for protection metal-oxide-semiconductor Q1 grid voltage and be no more than its limit value.Due to the existence of resistance R1, what surge current can be done is very little, and due to the existence of metal-oxide-semiconductor Q1, makes whole electronic product when normal work, and efficiency is unaffected.
The utility model also will provide the anti-surge circuit of another kind of structure, comprises high-power resistance R1, metal-oxide-semiconductor Q1, resistance R2, resistance R3, resistance R4, voltage-stabiliser tube ZD1, electric capacity C1, electrochemical capacitor EC1, electric capacity C3, electric capacity C2, bridge heap BD1, fuse F1, diode D1, triode Q2 and resistance R5, is characterized in that the positive pole of a termination electrochemical capacitor EC1 of described electric capacity C1, the positive pole of one end of resistance R4 and bridge heap BD1, the other end of electric capacity C1, the negative pole of electrochemical capacitor EC1, the drain electrode of metal-oxide-semiconductor Q1 and one end ground connection of resistance R1, the negative pole of another termination bridge heap BD1 of resistance R1, metal-oxide-semiconductor Q1 source electrode, one end of electric capacity C2, the anode of voltage-stabiliser tube ZD1, one end of electric capacity C3, one end of resistance R3 and one end of resistance R5, the grid of another termination metal-oxide-semiconductor Q1 of electric capacity C2, the negative electrode of voltage-stabiliser tube ZD1 and one end of resistance R2, the negative electrode of another terminating diode D1 of resistance R2 and the source electrode of triode Q2, the other end of the collector electrode connecting resistance R5 of triode Q2, the base stage connecting resistance R4 of triode Q2, the other end of resistance R3 and electric capacity C3.
The technical program is the improvement done on last technical scheme basis, add one by diode D1, the grid leadage circuit that triode Q2 and resistance R5 is formed, its Main Function is to be used for releasing when turning off the voltage of metal-oxide-semiconductor Q1 grid, work as switching off input voltage, triode Q2 base voltage first declines, cause triode Q2 conducting, metal-oxide-semiconductor Q1 grid voltage is by triode Q2 repid discharge, triode Q2 turns off fast, in time opening input voltage, input still must be charged to electrochemical capacitor EC1 and electric capacity C1 by resistance R1, so fast open shutdown better can be realized by this circuit, and due to the existence of metal-oxide-semiconductor Q1, make whole electronic product when normal work, efficiency is unaffected, be exactly fast open shutdown and heat engine switching on and shutting down, surge current is the same can be inhibited, thus greatly reduce the impact of electronic product to electrical network.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
Fig. 1 is the circuit diagram of existing NTC surge current suppression circuit.
Fig. 2 is a kind of circuit structure diagram of the utility model anti-surge circuit.
Fig. 3 is the another kind of circuit structure diagram of the utility model anti-surge circuit.
Embodiment
Fig. 1 is existing NTC surge current suppression circuit, describes, and do not repeat them here before its defect.
With reference to Fig. 2, a kind of anti-surge circuit of the present utility model, comprise high-power resistance R1, metal-oxide-semiconductor Q1, resistance R2, resistance R3, resistance R4, voltage-stabiliser tube ZD1, electric capacity C1, electrochemical capacitor EC1, electric capacity C3, electric capacity C2, bridge heap BD1 and fuse F1, the positive pole of the one termination electrochemical capacitor EC1 of described electric capacity C1, the positive pole of one end of resistance R4 and bridge heap BD1, the other end of electric capacity C1, the negative pole of electrochemical capacitor EC1, the drain electrode of metal-oxide-semiconductor Q1 and one end ground connection of resistance R1, the negative pole of another termination bridge heap BD1 of resistance R1, metal-oxide-semiconductor Q1 source electrode, one end of electric capacity C2, the anode of voltage-stabiliser tube ZD1, one end of electric capacity C3 and one end of resistance R3, the grid of another termination metal-oxide-semiconductor Q1 of electric capacity C2, the negative electrode of voltage-stabiliser tube ZD1 and one end of resistance R2, the other end connecting resistance R4 of resistance R2, the other end of resistance R3 and electric capacity C3.
A kind of anti-surge circuit of the present utility model, its operation principle is as follows: when startup, because on electrochemical capacitor EC1 and electric capacity C1, voltage is 0, metal-oxide-semiconductor Q1 turns off, input voltage is charged to electrochemical capacitor EC1 and electric capacity C1 by high-power resistance R1, so electric current is determined by resistance R1, resistance R1 resistance is larger, surge current is less, when the voltage on electrochemical capacitor EC1 reaches some values, when metal-oxide-semiconductor Q1 grid voltage reaches the threshold voltage of metal-oxide-semiconductor, metal-oxide-semiconductor Q1 opens, short-circuit resistance R1, startup completes, after metal-oxide-semiconductor Q1 conducting, between the DS of metal-oxide-semiconductor Q1, voltage is very little, loss is very low.Electric capacity C2, electric capacity C3 can be used for regulating the rise time of metal-oxide-semiconductor Q1 grid voltage, control the service time of metal-oxide-semiconductor Q1, and voltage-stabiliser tube ZD1 can be used for protection metal-oxide-semiconductor Q1 grid voltage and be no more than its limit value.Due to the existence of resistance R1, what surge current can be done is very little, and due to the existence of metal-oxide-semiconductor Q1, makes whole electronic product when normal work, and efficiency is unaffected.
With reference to Fig. 3, the anti-surge circuit of another kind of structure of the present utility model, comprises high-power resistance R1, metal-oxide-semiconductor Q1, resistance R2, resistance R3, resistance R4, voltage-stabiliser tube ZD1, electric capacity C1, electrochemical capacitor EC1, electric capacity C3, electric capacity C2, bridge heap BD1, fuse F1, diode D1, the positive pole of the one termination electrochemical capacitor EC1 of triode Q2 and resistance R5, described electric capacity C1, the positive pole of one end of resistance R4 and bridge heap BD1, the other end of electric capacity C1, the negative pole of electrochemical capacitor EC1, the drain electrode of metal-oxide-semiconductor Q1 and one end ground connection of resistance R1, the negative pole of another termination bridge heap BD1 of resistance R1, metal-oxide-semiconductor Q1 source electrode, one end of electric capacity C2, the anode of voltage-stabiliser tube ZD1, one end of electric capacity C3, one end of resistance R3 and one end of resistance R5, the grid of another termination metal-oxide-semiconductor Q1 of electric capacity C2, the negative electrode of voltage-stabiliser tube ZD1 and one end of resistance R2, the negative electrode of another terminating diode D1 of resistance R2 and the source electrode of triode Q2, the other end of the collector electrode connecting resistance R5 of triode Q2, the base stage connecting resistance R4 of triode Q2, the other end of resistance R3 and electric capacity C3.
Present embodiment is the improvement on Fig. 2 execution mode basis, add one by diode D1, the grid leadage circuit that triode Q2 and resistance R5 is formed, its Main Function is to be used for releasing when turning off the voltage of metal-oxide-semiconductor Q1 grid, work as switching off input voltage, triode Q2 base voltage first declines, cause triode Q2 conducting, metal-oxide-semiconductor Q1 grid voltage is by triode Q2 repid discharge, triode Q2 turns off fast, in time opening input voltage, input still must be charged to electrochemical capacitor EC1 and electric capacity C1 by resistance R1, so fast open shutdown better can be realized by this circuit, and due to the existence of metal-oxide-semiconductor Q1, make whole electronic product when normal work, efficiency is unaffected, be exactly fast open shutdown and heat engine switching on and shutting down, surge current is the same can be inhibited, thus greatly reduce the impact of electronic product to electrical network.
It is understood that above-described embodiment is just to explanation of the present utility model, instead of to restriction of the present utility model, any utility model do not exceeded in the utility model spirit is created, and all falls within protection range of the present utility model.
Claims (2)
1. an anti-surge circuit, comprise high-power resistance R1, metal-oxide-semiconductor Q1, resistance R2, resistance R3, resistance R4, voltage-stabiliser tube ZD1, electric capacity C1, electrochemical capacitor EC1, electric capacity C3, electric capacity C2, bridge heap BD1 and fuse F1, it is characterized in that the positive pole of a termination electrochemical capacitor EC1 of described electric capacity C1, the positive pole of one end of resistance R4 and bridge heap BD1, the other end of electric capacity C1, the negative pole of electrochemical capacitor EC1, the drain electrode of metal-oxide-semiconductor Q1 and one end ground connection of resistance R1, the negative pole of another termination bridge heap BD1 of resistance R1, metal-oxide-semiconductor Q1 source electrode, one end of electric capacity C2, the anode of voltage-stabiliser tube ZD1, one end of electric capacity C3 and one end of resistance R3, the grid of another termination metal-oxide-semiconductor Q1 of electric capacity C2, the negative electrode of voltage-stabiliser tube ZD1 and one end of resistance R2, the other end connecting resistance R4 of resistance R2, the other end of resistance R3 and electric capacity C3.
2. an anti-surge circuit, comprises high-power resistance R1, metal-oxide-semiconductor Q1, resistance R2, resistance R3, resistance R4, voltage-stabiliser tube ZD1, electric capacity C1, electrochemical capacitor EC1, electric capacity C3, electric capacity C2, bridge heap BD1, fuse F1, diode D1, triode Q2 and resistance R5, is characterized in that the positive pole of a termination electrochemical capacitor EC1 of described electric capacity C1, the positive pole of one end of resistance R4 and bridge heap BD1, the other end of electric capacity C1, the negative pole of electrochemical capacitor EC1, the drain electrode of metal-oxide-semiconductor Q1 and one end ground connection of resistance R1, the negative pole of another termination bridge heap BD1 of resistance R1, metal-oxide-semiconductor Q1 source electrode, one end of electric capacity C2, the anode of voltage-stabiliser tube ZD1, one end of electric capacity C3, one end of resistance R3 and one end of resistance R5, the grid of another termination metal-oxide-semiconductor Q1 of electric capacity C2, the negative electrode of voltage-stabiliser tube ZD1 and one end of resistance R2, the negative electrode of another terminating diode D1 of resistance R2 and the source electrode of triode Q2, the other end of the collector electrode connecting resistance R5 of triode Q2, the base stage connecting resistance R4 of triode Q2, the other end of resistance R3 and electric capacity C3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520873707.3U CN205081465U (en) | 2015-11-04 | 2015-11-04 | Anti -surge circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520873707.3U CN205081465U (en) | 2015-11-04 | 2015-11-04 | Anti -surge circuit |
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| Publication Number | Publication Date |
|---|---|
| CN205081465U true CN205081465U (en) | 2016-03-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520873707.3U Withdrawn - After Issue CN205081465U (en) | 2015-11-04 | 2015-11-04 | Anti -surge circuit |
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| CN (1) | CN205081465U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105356437A (en) * | 2015-11-04 | 2016-02-24 | 浙江榆阳电子有限公司 | Anti-surge circuit |
| CN112242787A (en) * | 2020-10-12 | 2021-01-19 | 深圳市振华微电子有限公司 | Simple impact current suppression circuit |
-
2015
- 2015-11-04 CN CN201520873707.3U patent/CN205081465U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105356437A (en) * | 2015-11-04 | 2016-02-24 | 浙江榆阳电子有限公司 | Anti-surge circuit |
| CN105356437B (en) * | 2015-11-04 | 2018-09-25 | 浙江榆阳电子有限公司 | A kind of anti-surge circuit |
| CN112242787A (en) * | 2020-10-12 | 2021-01-19 | 深圳市振华微电子有限公司 | Simple impact current suppression circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Anti-surge circuit Effective date of registration: 20180627 Granted publication date: 20160309 Pledgee: Bank of Hangzhou Limited by Share Ltd. Tongxiang branch Pledgor: ZHEJIANG YUYANG ELECTRONICS CO.,LTD. Registration number: 2018330000148 |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160309 Effective date of abandoning: 20180925 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20160309 Effective date of abandoning: 20180925 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20220725 Granted publication date: 20160309 Pledgee: Bank of Hangzhou Limited by Share Ltd. Tongxiang branch Pledgor: ZHEJIANG YUYANG ELECTRONICS CO.,LTD. Registration number: 2018330000148 |